CN112522670A - 一种等离子电源的射频方法 - Google Patents

一种等离子电源的射频方法 Download PDF

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CN112522670A
CN112522670A CN201910909515.6A CN201910909515A CN112522670A CN 112522670 A CN112522670 A CN 112522670A CN 201910909515 A CN201910909515 A CN 201910909515A CN 112522670 A CN112522670 A CN 112522670A
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颜朝阳
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Abstract

本发明涉及等离子电源技术领域，且公开了一种等离子电源的射频方法，操作步骤如下：等离子电源中采用射频溅射技术，且配备相应的匹配网络，并将工作气压降低；在射频溅射的过程中，为了获得高能量的摄像靶面的正离子流，置于放电中的靶子的表面必须有较高的负电位；在气体溅射过程中，该等离子电源的射频方法，通过将放电中的靶子的表面附加较高的负电位，从而吸引离子区中正离子向靶子移动，从而聚集大量的电荷，以施加粒子动能，而溅射气体中混合氧、氮、甲烷或一氧化氮、硫化氮等物质，会使气体浓度变低，从而提高溅射速率，且通过计算靶子与阳极罩之间的距离，调节粒子正确的移动空间，从而让粒子获得大量的动能。

Description

一种等离子电源的射频方法
技术领域
本发明涉及等离子电源技术领域，具体为一种等离子电源的射频方法。
背景技术
等离子电源又称射频电源，是等离子体配套电源，并由射频功率源，阻抗匹配器以及阻抗功率计组成，应用于射频溅射，PECVD化学气相沉积，反应离子刻蚀等设备中，近些年来，等离子体的研究受到高度关注，由射频放电方式产生的低气压、高密度等离子体在新材料的制备及材料表面改性等工艺中得到了越来越广泛的应用。
然而目前的等离子电源的射频溅射中，粒子轰击靶子表面时，容易分散，且靶子表面原子能量而由靶中逸出，粒子获得的能量不足，导致溅射速率低下，为此我们提出了一种等离子电源的射频方法。
发明内容
针对现有技术的不足，本发明提供了一种等离子电源的射频方法，解决了目前的等离子电源的射频溅射中，粒子轰击靶子表面时，容易分散，且靶子表面原子能量而由靶中逸出，粒子获得的能量不足，导致溅射速率低下的问题。
本发明提供如下技术方案：一种等离子电源的射频方法，操作步骤如下：
S1、等离子电源中采用射频溅射技术，且配备相应的匹配网络，并将工作气压降低；
S2、在射频溅射的过程中，为了获得高能量的摄像靶面的正离子流，置于放电中的靶子的表面必须有较高的负电位；
S3、在气体溅射过程中，将反应气体引入溅射气体中掺入氧、氮、甲烷或一氧化氮、硫化氮从而沉积出了氧化物、氮化物、碳化物和硫化物薄膜；
S4、当高能粒子轰击靶子表面时，就把能量传递给轰击区的表面，使靶子表面原子获得很高的能量而由靶中逸出，如此近射频。
优选的，S1的射频溅射中靶子要绝缘，也要水冷，靶系统的冷却水连接着靶作为阴极和真空腔体作为阳极，冷却水的绝缘电阻要足够大，即要保证冷却水管有足够的长度，一般情况下，靶的冷却水管约为10m，靶要安装屏蔽罩，由于靶的边缘戏射口，便于阳极罩与其安装，能控制边缘溅射在合适的范围。
优选的，S2中靶子的净直流电流必须为零，靶面电位至多只能稍微变正，其负峰值必须是等同于所加高频电位正负峰间的幅值。
优选的，S3中反应气体含量必须加以控制，若溅射总压力改变，为了保证同一薄膜性质，反应气体的含量亦需改变，当总压力增加时，反应气体的浓度必须降低。
优选的，S3中靶子厚度为某个定值，靶子阻抗与面积成反比，因此放电功率随着面积的增大而升高，且靶子溅射出来物质，呈半球形分布。
优选的，S4中靶子与阳极罩之间的距离必须满足2R，且中R表示电子的旋转半径，m表示电子质量，V表示阴极电压，q表示电子电量，B表示靶表面磁场强度，并通过R＝mV/qB计算出R值，从而调整靶子与阳极罩之间的间距。
与现有技术对比，本发明具备以下有益效果：
该等离子电源的射频方法，通过将放电中的靶子的表面附加较高的负电位，从而吸引离子区中正离子向靶子移动，从而聚集大量的电荷，以施加粒子动能，而溅射气体中混合氧、氮、甲烷或一氧化氮、硫化氮等物质，会使气体浓度变低，从而提高溅射速率，且通过计算靶子与阳极罩之间的距离，调节粒子正确的移动空间，从而让粒子获得大量的动能。
附图说明
图1为本发明流程示意图。
具体实施方式
为了使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，还可以包括电性的连接，不管是直接的还是间接的。
为了保持本公开实施例的以下说明清楚且简明，本公开省略了已知功能和已知部件的详细说明，以避免不必要地混淆本发明的概念。
请参阅图1，一种等离子电源的射频方法，操作步骤如下：
S1、等离子电源中采用射频溅射技术，且配备相应的匹配网络，并将工作气压降低；
S2、在射频溅射的过程中，为了获得高能量的摄像靶面的正离子流，置于放电中的靶子的表面必须有较高的负电位；
S3、在气体溅射过程中，将反应气体引入溅射气体中掺入氧、氮、甲烷或一氧化氮、硫化氮从而沉积出了氧化物、氮化物、碳化物和硫化物薄膜；
S4、当高能粒子轰击靶子表面时，就把能量传递给轰击区的表面，使靶子表面原子获得很高的能量而由靶中逸出，如此近射频。
在一个可选的实施例中，S1的射频溅射中靶子要绝缘，也要水冷，靶系统的冷却水连接着靶作为阴极和真空腔体作为阳极，冷却水的绝缘电阻要足够大，即要保证冷却水管有足够的长度，一般情况下，靶的冷却水管约为10m，靶要安装屏蔽罩，由于靶的边缘戏射口，便于阳极罩与其安装，能控制边缘溅射在合适的范围。
在一个可选的实施例中，S2中靶子的净直流电流必须为零，靶面电位至多只能稍微变正，其负峰值必须是等同于所加高频电位正负峰间的幅值。
在一个可选的实施例中，S3中反应气体含量必须加以控制，若溅射总压力改变，为了保证同一薄膜性质，反应气体的含量亦需改变，当总压力增加时，反应气体的浓度必须降低。
在一个可选的实施例中，S3中靶子厚度为某个定值，靶子阻抗与面积成反比，因此放电功率随着面积的增大而升高，且靶子溅射出来物质，呈半球形分布。
在一个可选的实施例中，S4中靶子与阳极罩之间的距离必须满足2R，且中R表示电子的旋转半径，m表示电子质量，V表示阴极电压，q表示电子电量，B表示靶表面磁场强度，并通过R＝mV/qB计算出R值，从而调整靶子与阳极罩之间的间距。
以上实施例仅为本发明的示例性实施例，不用于限制本发明，本发明的保护范围由权利要求书限定。本领域技术人员可以在本发明的实质和保护范围内，对本发明做出各种修改或等同替换，这种修改或等同替换也应视为落在本发明的保护范围内。

Claims (6)

1.一种等离子电源的射频方法，其特征在于，操作步骤如下：
S1、等离子电源中采用射频溅射技术，且配备相应的匹配网络，并将工作气压降低；
S2、在射频溅射的过程中，为了获得高能量的摄像靶面的正离子流，置于放电中的靶子的表面必须有较高的负电位；
S3、在气体溅射过程中，将反应气体引入溅射气体中掺入氧、氮、甲烷或一氧化氮、硫化氮从而沉积出了氧化物、氮化物、碳化物和硫化物薄膜；
S4、当高能粒子轰击靶子表面时，就把能量传递给轰击区的表面，使靶子表面原子获得很高的能量而由靶中逸出，如此近射频。
2.根据权利要求1所述的一种等离子电源的射频方法，其特征在于，S1的射频溅射中靶子要绝缘，也要水冷，靶系统的冷却水连接着靶作为阴极和真空腔体作为阳极，冷却水的绝缘电阻要足够大，即要保证冷却水管有足够的长度，一般情况下，靶的冷却水管约为10m，靶要安装屏蔽罩，由于靶的边缘戏射口，便于阳极罩与其安装，能控制边缘溅射在合适的范围。
3.根据权利要求1所述的一种等离子电源的射频方法，其特征在于，S2中靶子的净直流电流必须为零，靶面电位至多只能稍微变正，其负峰值必须是等同于所加高频电位正负峰间的幅值。
4.根据权利要求1所述的一种等离子电源的射频方法，其特征在于，S3中反应气体含量必须加以控制，若溅射总压力改变，为了保证同一薄膜性质，反应气体的含量亦需改变，当总压力增加时，反应气体的浓度必须降低。
5.根据权利要求1所述的一种等离子电源的射频方法，其特征在于，S3中靶子厚度为某个定值，靶子阻抗与面积成反比，因此放电功率随着面积的增大而升高，且靶子溅射出来物质，呈半球形分布。
6.根据权利要求1所述的一种等离子电源的射频方法，其特征在于，S4中靶子与阳极罩之间的距离必须满足2R，且中R表示电子的旋转半径，m表示电子质量，V表示阴极电压，q表示电子电量，B表示靶表面磁场强度，并通过R＝mV/qB计算出R值，从而调整靶子与阳极罩之间的间距。
CN201910909515.6A 2019-09-19 2019-09-19 一种等离子电源的射频方法 Pending CN112522670A (zh)

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