High-selectivity gain dual-polarized filtering patch antenna
Technical Field
The invention relates to the technical field of communication antennas, in particular to a high-selectivity-gain dual-polarized filtering patch antenna.
Background
With the rapid development of modern communication systems, the performance requirements for the individual components within the communication system are becoming more and more stringent. One of the solutions to meet the requirements of high performance components is to use a multifunctional device because it can reduce the circuit size and improve the system performance, such as a filtering antenna that achieves both filtering and radiation characteristics. In addition, dual polarization is an important performance index of the base station antenna, so that the dual-polarization filtering antenna has a great deal of requirements. For the design of the filtering antenna, a lot of researches and researches are carried out by a plurality of scholars, and a plurality of design methods are proposed, however, some methods influence the gain and the radiation efficiency of the antenna, or the dual polarization is difficult to realize.
The conventional filter antenna design method is investigated and known, and the specific steps are as follows:
professor Shyh-Jong Chung and its researchers have used U-shaped patches instead of the last order resonators of the filter to achieve an antenna radiation response with quasi-elliptical characteristics.
Professor octosinensis et al obtained a filtering antenna with good filtering performance by introducing a radiation zero near the antenna operating band by using methods such as stacking patches, U-shaped grooves, and shorting bars.
In general, in the design work of the existing filtering antenna, the main method is to cascade the antenna and the filtering circuit, so that an additional impedance transformation circuit is needed or the impedance characteristic between the resonator and the antenna is optimized to realize matching; or by introducing radiation zeros near the pass band to achieve filtering performance, but this makes dual polarization structures less feasible. Therefore, it is of great significance to design a dual-polarized filtering antenna with high selective gain.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides a high-selectivity-gain dual-polarized filtering patch antenna which has an impedance matching characteristic, can introduce a radiation zero point to realize filtering performance while keeping a dual-polarized structure, and is simple in structure and convenient to process.
In order to achieve the purpose, the technical scheme provided by the invention is as follows: a high-selectivity-gain dual-polarized filtering patch antenna comprises a metal reflecting floor, a first dielectric substrate, a second dielectric substrate, a first metal column, a second metal column, a first metal feed sheet and a second metal feed sheet which are sequentially arranged from bottom to top; a preset distance is kept between the metal reflecting floor and the first medium substrate to form a first air layer; the upper surface of the first dielectric substrate is provided with a first copper-clad layer, the first copper-clad layer is provided with a first rectangular patch, and the first rectangular patch is used as a main radiation source; a preset distance is kept between the first dielectric substrate and the second dielectric substrate to form a second air layer; the upper surface of the second dielectric substrate is provided with a second copper-clad layer, and the second copper-clad layer is provided with a second rectangular patch for introducing a radiation zero point at a high frequency or a low frequency of a pass band; the metal reflection floor is provided with two input through holes, namely a first input through hole and a second input through hole, the first metal feed sheet is connected with the first input through hole through a first metal column, the second metal feed sheet is connected with the second input through hole through a second metal column, the first input through hole and the second input through hole respectively form two input ports with the first metal column and the second metal column, the two input ports are a first input port and a second input port, the two input ports can feed the first metal feed sheet and the second metal feed sheet, and the first metal feed sheet and the second metal feed sheet couple energy to the first rectangular patch; the first rectangular patch is provided with four slot lines which extend from four corners to the center and are not intersected with each other, and the four slot lines are used for increasing the coupling between the first rectangular patch and the second rectangular patch and adjusting the resonant frequency of the first rectangular patch; the center of the second rectangular patch is provided with a cross-shaped slot line used for adjusting the coupling between the first rectangular patch and the second rectangular patch, thereby adjusting the position of the radiation zero point.
Further, the first input port and the second input port are 50 ohm impedance matching ports.
Further, the first dielectric substrate and the second dielectric substrate are rectangular dielectric substrates.
Further, the first metal feeding sheet and the second metal feeding sheet are rectangular metal feeding sheets.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the input port of the invention is set as an impedance matching port, the impedance matching characteristic is achieved without introducing an additional impedance transformation circuit, and meanwhile, a radiation zero point is introduced by applying a rectangular patch on a dielectric substrate, so that the filtering performance can be realized while a dual-polarization structure is kept.
2. The invention has the advantages of simple structure, light weight, low processing cost, good frequency selection characteristic and economic applicability.
Drawings
Fig. 1 is a schematic structural diagram of a dual-polarized filtering patch antenna.
Fig. 2 is a structural front view of the dual polarized filter patch antenna.
Fig. 3 is a schematic structural view of the metal reflective floor.
Fig. 4 is a schematic structural diagram of a first metal feeding sheet and a second metal feeding sheet.
Fig. 5 is a schematic structural diagram of a first dielectric substrate.
Fig. 6 is a schematic structural diagram of a second dielectric substrate.
FIG. 7 shows the reflection coefficient S of the first input port with low frequency and high selectivity gain according to the present invention11And a simulation result graph of the gain curve.
Fig. 8 is a graph of simulation results of the isolation between the first input port and the second input port when the low frequency high selectivity gain is provided.
Fig. 9 is a simulated radiation pattern of the E-plane and the H-plane of the first input port at the frequency point of 1GHz when the low-frequency high-selectivity gain is provided.
FIG. 10 shows the reflection coefficient S of the first input port with high frequency and high selectivity gain according to the present invention11And a simulation result graph of the gain curve.
Fig. 11 is a graph of simulation results of the isolation between the first input port and the second input port when the high-frequency high-selectivity gain is provided.
Fig. 12 is a simulated radiation pattern of the E-plane and the H-plane of the first input port at the frequency point of 1GHz when the present invention has high frequency and high selectivity gain.
Detailed Description
The present invention will be further described with reference to the following specific examples.
Example 1
Referring to fig. 1 to 6, the present embodiment provides a low-frequency high-selectivity-gain dual-polarized filter patch antenna, which includes a metal reflective floor 1, a first dielectric substrate 4, a second dielectric substrate 7, a first metal pillar 201, a second metal pillar 202, a first metal feed tab 301, and a second metal feed tab 302, which are sequentially disposed from bottom to top;
a preset distance is kept between the metal reflection floor 1 and the first dielectric substrate 4 to form a first air layer 10, a first copper-clad layer 5 is arranged on the upper surface of the first dielectric substrate 4, a first rectangular patch 6 is arranged on the first copper-clad layer 5, the first rectangular patch 6 serves as a main radiation source, a preset distance is kept between the first dielectric substrate 4 and the second dielectric substrate 7 to form a second air layer 11, a second copper-clad layer 8 is arranged on the upper surface of the second dielectric substrate 7, and a second rectangular patch 9 is arranged on the second copper-clad layer 8 and used for introducing a radiation zero point at a low frequency of a pass band; the metal reflection floor 1 is provided with two input through holes, namely a first input through hole 101 and a second input through hole 102, the first metal feed sheet 301 is connected with the first input through hole 101 through a first metal column 201, the second metal feed sheet 302 is connected with the second input through hole 102 through a second metal column 202, wherein the first input through hole 101 and the second input through hole 102 respectively form two input ports with the first metal column 201 and the second metal column 202, the two input ports are a first input port and a second input port, the two input ports can feed the first metal feed sheet 301 and the second metal feed sheet 302, and meanwhile, the first metal feed sheet 301 and the second metal feed sheet 302 couple energy to the first rectangular patch 6; four slot lines 601, 602, 603 and 604 which extend from four corners of the first rectangular patch 6 to the center and do not intersect with each other are arranged on the first rectangular patch 6, and are used for increasing the coupling between the first rectangular patch 6 and the second rectangular patch 9 and adjusting the resonant frequency of the first rectangular patch 6, and a cross-shaped slot line 901 is arranged at the center of the second rectangular patch 9 and is mainly used for adjusting the coupling between the first rectangular patch 6 and the second rectangular patch 9, so that the position of a radiation zero point is adjusted;
the first dielectric substrate 4 and the second dielectric substrate 7 are both rectangular dielectric substrates, the dielectric constants of the two dielectric substrates are both 3.5, the loss tangent is 0.0018, and the thicknesses of the two dielectric substrates are both 0.508 mm; the first input port and the second input port are both 50-ohm impedance matching ports; the heights of the first metal column 201 and the second metal column 202 are both 4.5 mm; the thickness of the first air layer 10 is 5.5 mm, and the thickness of the second air layer 11 is 10 mm; the first metal feed sheet 301 and the second metal feed sheet 302 are both rectangular metal feed sheets, and the length and the width of the two metal feed sheets are 16.5 millimeters and 10 millimeters respectively; the length and the width of the first rectangular patch 6 are both 102 mm, the length of the four slot lines 601, 602, 603 and 604 on the first rectangular patch 6 is 47 mm, and the width is 3 mm; the length and the width of the second rectangular patch 9 are both 106 mm, and the length of the cross-shaped slot line 901 on the second rectangular patch 9 is 71.4 mm, and the width is 2 mm.
Referring to FIG. 7, the reflection coefficient S of the first input port with low frequency and high selectivity gain according to the present invention is shown11And the simulation result of the gain curve. From the reflection coefficient S11As can be seen from the simulation results, the reflection coefficient | S11|<-a frequency range of 14dB exceeding the frequency interval of 0.98GHz-1.02 GHz; as can be seen from the gain curve simulation result graph, in the frequency range of 0.98GHz-1.02GHz, the gain is flat and is kept about 9 dBi; and a radiation zero point is arranged at the frequency point of 0.96GHz, so that the out-of-band rejection performance of the low frequency band is improved.
Referring to fig. 8, a simulation result of the isolation between the first input port and the second input port when the present invention has low frequency and high selectivity gain is shown. It can be seen that the isolation of the two ports is >20dB in the frequency range 0.98GHz-1.02 GHz.
Referring to fig. 9, a simulated radiation pattern of the E-plane and the H-plane of the first input port at the frequency point of 1GHz when the low-frequency high-selectivity gain is provided in the present invention is shown. It can be seen that the pattern characteristics of the present invention are good.
Example 2
The difference from embodiment 1 is that this embodiment provides a high-frequency high-selectivity gain dual-polarized filter patch antenna, in which the heights of the first metal pillar 201 and the second metal pillar 202 are both 5 mm; the thickness of the first air layer 10 is 6 mm, and the thickness of the second air layer 11 is 8 mm; the first metal feeding piece 301 and the second metal feeding piece 302 are both rectangular metal feeding pieces, and the length and the width of the two metal feeding pieces are 17 mm and 8 mm respectively; the length and width of the first rectangular patch 6 are both 116 mm; the four slot lines 601, 602, 603, 604 on the first rectangular patch 6 have a length of 42 mm and a width of 3 mm; the length and width of the second rectangular patch 9 are both 114 mm; the cross-shaped slot line 901 on the second rectangular patch 9 has a length of 57 mm and a width of 2 mm.
Referring to FIG. 10, the reflection coefficient S of the first input port with high frequency and high selectivity gain according to the present invention is shown11And the simulation result of the gain curve. From the reflection coefficient S11As can be seen from the simulation results, the reflection coefficient | S11|<-a frequency range of 14dB exceeding the frequency interval of 0.98GHz-1.02 GHz; as can be seen from the gain curve simulation result graph, in the frequency range of 0.98GHz-1.02GHz, the gain is flat and is kept about 9 dBi; a radiation zero point is arranged at the frequency point of 1.046GHz, so that the out-of-band rejection performance of the high frequency band is improved.
Referring to fig. 11, a simulation result of the isolation between the first input port and the second input port when the present invention has high frequency and high selectivity gain is shown. It can be seen that the isolation of the two ports is >18dB in the frequency range 0.98GHz-1.02 GHz.
Referring to fig. 12, a simulated radiation pattern of the E-plane and the H-plane of the first input port at the frequency point of 1GHz when the present invention has high frequency and high selectivity gain is shown. It can be seen that the pattern characteristics of the present invention are good.
The above-mentioned embodiments are merely preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, so that the changes in the shape and principle of the present invention should be covered within the protection scope of the present invention.