CN112505109A - Hydrogen sensor device based on thermoelectric effect and hydrogen detection method using same - Google Patents
Hydrogen sensor device based on thermoelectric effect and hydrogen detection method using same Download PDFInfo
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- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 129
- 230000005676 thermoelectric effect Effects 0.000 title claims abstract description 38
- 150000002431 hydrogen Chemical class 0.000 title claims description 80
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- 238000001514 detection method Methods 0.000 title claims description 12
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- 239000010408 film Substances 0.000 claims description 31
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- 229910052797 bismuth Inorganic materials 0.000 claims description 16
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 16
- 229910052697 platinum Inorganic materials 0.000 claims description 12
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- 238000000034 method Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
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- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- FBXVOTBTGXARNA-UHFFFAOYSA-N bismuth;trinitrate;pentahydrate Chemical compound O.O.O.O.O.[Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FBXVOTBTGXARNA-UHFFFAOYSA-N 0.000 description 1
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- PPNKDDZCLDMRHS-UHFFFAOYSA-N dinitrooxybismuthanyl nitrate Chemical class [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
- G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
Abstract
The invention relates to hydrogen sensor equipment based on a thermoelectric effect, which is characterized by comprising a substrate layer, a conductive noble metal layer, a thermoelectric thin film layer, a hydrogen sensitive catalyst layer, a first electrode and a second electrode from bottom to top in sequence; wherein the electrically conductive noble metal layer is in direct contact with the substrate layer, the first electrode is in direct contact with the hydrogen-sensitive catalyst layer, and the second electrode is in direct contact with the thermoelectric thin film layer; wherein at least a portion of the thermoelectric thin film layer is not covered by the hydrogen-sensitive catalyst layer.
Description
Technical Field
The invention relates to the technical field of sensing equipment and hydrogen detection, in particular to hydrogen sensor equipment based on a thermoelectric effect and a hydrogen detection method using the hydrogen sensor equipment based on the thermoelectric effect.
Background
Hydrogen is a renewable green new energy without harmful emission, and becomes an ideal new energy which can replace increasingly exhausted fossil energy. In recent years, the main economic bodies in the world have been pushing hydrogen without any loss as a new energy source and a new fuel for future vehicles and households.
Hydrogen gas, while not perceived by the human senses, is itself highly flammable and explosive. The flammability threshold of hydrogen in air is 4.65%, and the hydrogen can explode when encountering open fire, which brings great safety hazards to storage and transportation of the hydrogen. Furthermore, hydrogen is a gas whose combustion temperature (>1000 ℃) is extremely high. Meanwhile, the fuel cell can be used as a raw material of a fuel cell as an energy source of a new energy automobile. Due to the high combustion temperature of hydrogen, safety is of particular importance during storage of hydrogen. A sensor is required to detect whether the hydrogen storage tank has a leak in real time. In order to secure the safety of the apparatus using hydrogen as an energy source, it is necessary to develop a hydrogen sensor which is reliable, highly sensitive, and has a short response time. The hydrogen sensor based on the thermoelectric effect of the thermoelectric material has the characteristics of low operation energy consumption, no external power supply and the like, and is suitable for detecting hydrogen storage.
Chinese utility model patent application No. 200620042071.9 entitled "thermoelectric thin film hydrogen sensor" discloses a hydrogen sensor device based on the thermoelectric effect. However, the hydrogen sensor disclosed in this patent has a response time of 50 seconds when detecting 3% hydrogen. And the thermoelectric thin film layer needs to be prepared by a vacuum magnetron sputtering process, so that the industrial application of the hydrogen sensor is limited.
For this reason, there is a continuous need in the art to develop a thermoelectric effect-based hydrogen sensor device that has high sensitivity, short response time, and is easy to industrialize.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned drawbacks of the prior art and providing a thermoelectric effect-based hydrogen sensor device having high sensitivity, short response time, and easy industrialization. The sensor adopts a thermoelectric material bismuth telluride film with excellent performance at normal temperature as a core sensing material, and the material is a thermoelectric material with the best thermoelectric performance at normal temperature in the currently obtained industrialized thermoelectric materials. Therefore, the material is sensitive to the temperature difference at normal temperature. In addition, the metal platinum film is a good catalyst for hydrogen catalytic oxidation at normal temperature. The combination of the two can prepare the hydrogen sensor with high sensitivity and short response time.
It is also an object of the present application to provide a hydrogen gas detection method using the hydrogen gas sensor device based on the thermoelectric effect as described above.
In order to achieve the object of the present invention, the present application provides the following technical solutions.
In a first aspect, the present application provides a hydrogen sensor device based on a thermoelectric effect, which is characterized in that the hydrogen sensor device sequentially comprises, from bottom to top, a substrate layer, a conductive noble metal layer, a thermoelectric thin film layer, a hydrogen-sensitive catalyst layer, a first electrode and a second electrode;
wherein the electrically conductive noble metal layer is in direct contact with the substrate layer, the first electrode is in direct contact with the hydrogen-sensitive catalyst layer, and the second electrode is in direct contact with the thermoelectric thin film layer;
wherein at least a portion of the thermoelectric thin film layer is not covered by the hydrogen-sensitive catalyst layer.
In one embodiment of the first aspect, the substrate layer comprises a silicon layer.
In one embodiment of the first aspect, the conductive noble metal layer comprises a gold film.
In one embodiment of the first aspect, the reductant layer comprises a platinum film.
In one embodiment of the first aspect, the thermoelectric thin film layer is made of telluride.
In one embodiment of the first aspect, the telluride comprises bismuth telluride, antimony tristelluride, lead telluride, copper telluride.
In one embodiment of the first aspect, the telluride is deposited by solution deposition onto the conductive noble metal layer.
In one embodiment of the first aspect, the thermoelectric effect based hydrogen sensor apparatus further comprises a voltage measuring device, a micro control unit and an alarm;
wherein the voltage measuring device is used for measuring the voltage between the first electrode and the second electrode and outputting the voltage value to the micro control unit;
the micro control unit is used for judging whether the voltage value measured by the voltage measuring device is changed, wherein if the micro control unit detects that the voltage value is changed, the micro control unit indicates that the hydrogen sensing equipment detects hydrogen, and the micro control unit instructs the alarm to give an alarm; if the micro control unit detects that the voltage value is not changed, the hydrogen sensing equipment is indicated to not detect hydrogen, and the micro control unit does not instruct the alarm to give an alarm.
In a second aspect, the present application provides a hydrogen gas detection method using the thermoelectric effect-based hydrogen sensor device according to the first aspect, characterized in that the method comprises the steps of:
s1: exposing the hydrogen sensor device based on the thermoelectric effect to an atmosphere to be detected, which may or may not include hydrogen, and leaving for a predetermined period of time;
s2: monitoring whether a voltage value between the first electrode and the second electrode changes, wherein if the voltage value changes, it indicates that hydrogen is present in the atmosphere to be detected; if the voltage value is unchanged, it indicates that no hydrogen exists in the atmosphere to be detected.
In one embodiment of the second aspect, in step S1, the hydrogen concentration of the atmosphere to be detected is greater than or equal to 5% on a volume percentage basis, and the predetermined period of time is less than or equal to 3 seconds.
In one embodiment of the second aspect, in step S1, the hydrogen concentration of the atmosphere to be detected is greater than or equal to 3% on a volume percentage basis, and the predetermined period of time is less than or equal to 3 seconds.
In one embodiment of the second aspect, in step S1, the hydrogen concentration of the atmosphere to be detected is greater than or equal to 1% on a volume percentage basis, and the predetermined period of time is less than or equal to 3 seconds
Compared with the prior art, the invention has the beneficial effects that: less maintenance is needed, the sensitivity of the sensor is high, and the response speed is high (less than or equal to 3 seconds).
Drawings
Fig. 1 is a schematic view of a hydrogen sensor device based on the thermoelectric effect according to an embodiment of the present invention.
Fig. 2 is a graph of sensing data for a hydrogen sensor device based on the thermoelectric effect according to an embodiment of the present invention with respect to 5% hydrogen. In fig. 2, the abscissa is response time in seconds and the ordinate is voltage in volts.
Fig. 3 is a graph of sensing data for a hydrogen sensor device based on the thermoelectric effect according to an embodiment of the present invention with respect to 3% hydrogen. In fig. 3, the abscissa is response time in seconds and the ordinate is voltage in volts.
Fig. 4 is a graph of sensing data for 1% hydrogen for a hydrogen sensor device based on the thermoelectric effect according to an embodiment of the present invention. In fig. 4, the abscissa is response time in seconds, and the ordinate is voltage in volts.
Fig. 5 is a schematic circuit control diagram of a hydrogen sensor device based on thermoelectric effect according to an embodiment of the present invention.
In the above drawings, the reference numerals have the following meanings:
1 first electrode
2 second electrode
3 hydrogen sensitive catalyst layer
4 thermoelectric thin film layer
5 conductive noble metal layer
6 substrate layer
7 Voltage measuring device
8 micro control unit.
Detailed Description
Unless otherwise defined, technical or scientific terms used herein in the specification and claims should have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. All numerical values recited herein as between the lowest value and the highest value are intended to mean all values between the lowest value and the highest value in increments of one unit when there is more than two units difference between the lowest value and the highest value. In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings, which are merely for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be construed as limiting the invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "connected" and "connected" are to be construed broadly, e.g. as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the creation of the present invention can be understood by those of ordinary skill in the art through specific situations.
In the following detailed description of the embodiments of the present invention, reference is made to the accompanying drawings, where it is noted that in the interest of brevity and conciseness, not all features of an actual embodiment may be described in detail in this specification. Modifications and substitutions to the embodiments of the present invention may be made by those skilled in the art without departing from the spirit and scope of the present invention, and the resulting embodiments are within the scope of the present invention.
Referring to fig. 1, in one embodiment, the present application provides a hydrogen gas sensor device based on the thermoelectric effect, which comprises a substrate layer 6, an electrically conductive noble metal layer 5, a thermoelectric thin film layer 4, a hydrogen-sensitive catalyst layer 3, a first electrode 1 and a second electrode 2 in this order from bottom to top. In this embodiment, the conductive noble metal layer 5 directly contacts the substrate layer 6, the first electrode 1 directly contacts the hydrogen-sensitive catalyst layer 3, and the second electrode 2 directly contacts the thermoelectric thin film layer 4. In this embodiment, at least a portion of the thermoelectric thin film layer 4 is not covered by the hydrogen-sensitive catalyst layer 3.
In one embodiment, the substrate layer 6 comprises a silicon layer. In one embodiment, the conductive noble metal layer 5 comprises a gold film. In one embodiment, the hydrogen sensitive catalyst layer 3 comprises a platinum film.
In one embodiment, the thermoelectric thin film layer 4 is made of telluride. In one embodiment, the telluride comprises bismuth telluride, antimony tristelluride, lead telluride, copper telluride.
In one embodiment, the telluride is deposited by solution deposition onto the conductive noble metal layer 5.
In one embodiment, the present application discloses a hydrogen sensor apparatus and method based on the thermoelectric effect: comprises a silicon layer, a gold film, a bismuth telluride film, a platinum film and an electrode. The platinum film is directly contacted with the bismuth telluride film, the bismuth telluride film is directly contacted with the gold film, and the gold film is directly contacted with the silicon layer. When the hydrogen is contacted with the platinum film, the hydrogen and the oxygen in the air generate oxidation-reduction reaction under the catalytic action of the platinum film, the oxidation-reduction reaction is exothermic reaction, so that a temperature difference is generated at two ends of the bismuth telluride film material, and a voltage is generated through the thermoelectric effect of the bismuth telluride film. This voltage is the electrical signal of the hydrogen sensor.
Specifically, when the thermoelectric effect-based hydrogen sensor apparatus described herein is exposed to an atmosphere with hydrogen, the hydrogen combines with oxygen in the air under the catalytic action of the hydrogen-sensitive catalyst layer to undergo an oxidation-reduction reaction, ultimately producing water. This reaction is an exothermic reaction, and therefore causes the temperature of the thermoelectric material covered with the hydrogen sensitive catalyst layer to increase. A temperature difference deltat is thus established across the bismuth telluride film. According to the thermoelectric effect, when a temperature difference delta T appears at two ends of the bismuth telluride film, a potential difference delta V is generated at two ends of the material, and the potential difference is obtained by measuring the first electrode 1 and the second electrode 2 through a voltage measuring device.
The sensing response time of the sensor according to the pyroelectric effect is very short, and the data indicate that the signal change intensity of the response exceeds 50% within 3 seconds after the sensor is exposed to 5% hydrogen gas, as shown in fig. 2. The dashed box in fig. 2 represents the time period for which the sensor is exposed to hydrogen, which is 25 seconds. During this time, the sensor signal gradually rises, reaches a maximum value, and remains relatively stable at the maximum value. After 5% of the hydrogen contacted disappears, the signal of the sensor will return to the base signal value of the sensor within 1 minute. And the sensor can sense again.
In a specific embodiment, the hydrogen sensor device based on thermoelectric effect described herein is characterized by further comprising a voltage measuring device 7, a micro control unit 8 and an alarm. In one embodiment, the voltage measuring device 7 is configured to measure a voltage between the first electrode and the second electrode and output a voltage value to the micro control unit 8. In one embodiment, the micro control unit 8 is configured to determine whether there is a change in the voltage value measured by the voltage measuring device, wherein if the micro control unit detects a change in the voltage value, indicating that the hydrogen sensing device detects hydrogen, the micro control unit instructs the alarm to alarm; if the micro control unit detects that the voltage value is not changed, the hydrogen sensing equipment is indicated to not detect hydrogen, and the micro control unit does not instruct the alarm to give an alarm.
In one embodiment, the circuit and sensing configuration of the thermoelectric effect based hydrogen sensor apparatus described herein is illustrated in fig. 5. The voltage measuring device 7 tests the voltage between the first electrode 1 and the second electrode 2. The voltage value obtained by the test is transmitted to the microcontroller unit 8 by means of the voltage measuring device 7. And then the micro control unit 8 judges whether there is a voltage change. If the voltage change indicates that the sensor detects hydrogen, the detection system gives an alarm. If the voltage does not change, indicating that the sensor does not detect hydrogen, the detection system does not alarm. In one embodiment, the voltage measuring device may be a voltmeter. In one embodiment, the micro-control unit may be a computer.
In a second aspect, the present application provides a hydrogen gas detection method using a thermoelectric effect-based hydrogen gas sensor device as described above, characterized in that the method comprises the steps of:
s1: exposing the hydrogen sensor device based on the thermoelectric effect to an atmosphere to be detected, which may or may not include hydrogen, and leaving for a predetermined period of time;
s2: monitoring whether a voltage value between the first electrode and the second electrode changes, wherein if the voltage value changes, it indicates that hydrogen is present in the atmosphere to be detected; if the voltage value is unchanged, it indicates that no hydrogen exists in the atmosphere to be detected.
Device fabrication examples
Example 1
The present embodiment relates to the fabrication of a hydrogen sensor device based on the thermoelectric effect.
In this embodiment, the step of preparing the hydrogen sensing device includes:
the first step is as follows: purchasing a silicon chip which is prepared in advance and plated with a gold electrode;
the second step is that: dissolving 99% purity tellurium dioxide and 99% purity bismuth nitrate pentahydrate in 1mol/L nitric acid solution until the solution is saturated;
the third step: immersing the silicon wafer plated with gold into a solution containing saturated tellurium dioxide, saturated bismuth nitrate and 1mol/L nitric acid, and applying a voltage of 10mV to a gold electrode for 30 minutes;
the fourth step: after the voltage is applied for 30 minutes, taking out the silicon wafer plated with gold, washing the silicon wafer with ultrapure water, and naturally drying the silicon wafer;
the fifth step: after the bismuth telluride film is dried, covering half of the bismuth telluride film by using a mask plate, and plating a platinum film on the surface of the bismuth telluride film which is not covered by the mask plate by using a sputtering film plating method;
and a sixth step: the first electrode is welded to the platinum film layer and the second electrode is welded to the bismuth telluride film layer by an electric welding technique.
The prepared hydrogen sensor had the structure and circuit connection as shown in fig. 5.
Device Performance test examples
Example 2
This example relates to testing the performance of the hydrogen sensor of example 1 to detect hydrogen.
As shown in FIG. 2, before the hydrogen sensor of example 1 was brought into contact with hydrogen, the voltage value between the first electrode and the second electrode was-1.4X 10-5And V. When the sensor is contacted with hydrogen with the volume concentration of 5 percent, the hydrogen is oxidized into water under the catalysis of the platinum film, and heat is released, so that the temperature of one end of the bismuth telluride covered by the platinum film is increased, and the voltage between the first electrode and the second electrode is changed to-6.0 multiplied by 10-6V, detecting hydrogen at the moment, and giving an alarm. In fig. 2, the abscissa corresponding to the dashed line box represents the start-stop time of the sensor contacting hydrogen gas, and 25s before contacting hydrogen gas is the baseline stabilization time. As can be seen from fig. 2, when the volume concentration of hydrogen gas is 5%, the response time is less than or equal to 3 seconds.
The hydrogen volume concentration was reduced to 3%, and the results of the performance test of the hydrogen sensor of example 1 for detecting hydrogen were shown in fig. 3. In fig. 3, the abscissa corresponding to the dashed line box represents the start-stop time of the sensor contacting hydrogen gas, and 25s before contacting hydrogen gas is the baseline stabilization time. As can be seen from fig. 3, when the volume concentration of hydrogen gas is 3%, the response time is less than or equal to 3 seconds.
The hydrogen volume concentration was reduced to 1%, and the results of the performance test of the hydrogen sensor of example 1 for detecting hydrogen were shown in fig. 4. In fig. 4, the abscissa corresponding to the dashed line box represents the start-stop time of the sensor contacting hydrogen gas, and 25s before contacting hydrogen gas is the baseline stabilization time. As can be seen from fig. 3, when the volume concentration of hydrogen gas is 1%, the response time is less than or equal to 3 seconds.
The embodiments described above are intended to facilitate the understanding and appreciation of the application by those skilled in the art. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present application is not limited to the embodiments herein, and those skilled in the art who have the benefit of this disclosure will appreciate that many modifications and variations are possible within the scope of the present application without departing from the scope and spirit of the present application.
Claims (10)
1. The hydrogen sensor equipment based on the thermoelectric effect is characterized by comprising a substrate layer, a conductive noble metal layer, a thermoelectric thin film layer, a hydrogen sensitive catalyst layer, a first electrode and a second electrode from bottom to top in sequence;
wherein the electrically conductive noble metal layer is in direct contact with the substrate layer, the first electrode is in direct contact with the hydrogen-sensitive catalyst layer, and the second electrode is in direct contact with the thermoelectric thin film layer;
wherein at least a portion of the thermoelectric thin film layer is not covered by the hydrogen-sensitive catalyst layer.
2. A thermoelectric effect based hydrogen sensor apparatus according to claim 1 wherein the substrate layer comprises a silicon layer.
3. A thermoelectric-effect-based hydrogen sensor apparatus according to claim 1, wherein the conductive noble metal layer comprises a gold film;
the hydrogen sensitive catalyst layer includes a platinum film.
4. A thermoelectric-effect-based hydrogen sensor apparatus according to claim 1, wherein the thermoelectric thin film layer is made of telluride.
5. A thermoelectric effect based hydrogen sensor apparatus according to claim 4, characterized in that the telluride comprises one or more of bismuth telluride, antimony tristelluride, lead telluride or copper telluride.
6. A thermoelectric effect based hydrogen sensor apparatus according to claim 4 wherein the telluride is deposited on top of the conductive noble metal layer by solution deposition.
7. A thermoelectric effect based hydrogen sensor apparatus according to claim 4, further comprising a voltage measuring device, a micro control unit and an alarm;
wherein the voltage measuring device is used for measuring the voltage between the first electrode and the second electrode and outputting the voltage value to the micro control unit;
the micro control unit is used for judging whether the voltage value measured by the voltage measuring device is changed, wherein if the micro control unit detects that the voltage value is changed, the micro control unit indicates that the hydrogen sensing equipment detects hydrogen, and the micro control unit instructs the alarm to give an alarm; if the micro control unit detects that the voltage value is not changed, the hydrogen sensing equipment is indicated to not detect hydrogen, and the micro control unit does not instruct the alarm to give an alarm.
8. A hydrogen detection method using a thermoelectric effect based hydrogen sensor apparatus according to any one of claims 1 to 7, characterized in that the method comprises the steps of:
s1: exposing the hydrogen sensor device based on the thermoelectric effect to an atmosphere to be detected, which may or may not include hydrogen, and leaving for a predetermined period of time;
s2: monitoring whether a voltage value between the first electrode and the second electrode changes, wherein if the voltage value changes, it indicates that hydrogen is present in the atmosphere to be detected; if the voltage value is unchanged, it indicates that no hydrogen exists in the atmosphere to be detected.
9. The hydrogen detection method according to claim 8, wherein in step S1, the atmosphere to be detected has a hydrogen concentration of 3% or more on a volume percentage basis, and the predetermined period of time is 3 seconds or less.
10. The hydrogen detection method according to claim 8, wherein in step S1, the atmosphere to be detected has a hydrogen concentration of 1% or more on a volume percentage basis, and the predetermined period of time is 3 seconds or less.
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Citations (5)
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|---|---|---|---|---|
| US20060063291A1 (en) * | 2002-11-12 | 2006-03-23 | National Institute Of Adv. Industrial Sci. & Tech | Thermoelectric transducing material thin film, sensor device, and its manufacturing method |
| JP2006201100A (en) * | 2005-01-24 | 2006-08-03 | Matsushita Electric Ind Co Ltd | Hydrogen gas detection sensor |
| CN2901304Y (en) * | 2006-05-25 | 2007-05-16 | 华东理工大学 | Thermal electric film hydrogen sensor |
| CN104677952A (en) * | 2015-03-25 | 2015-06-03 | 海卓赛思（苏州）传感技术有限公司 | High-stability film hydrogen sensor and use method thereof |
| CN110998303A (en) * | 2017-08-10 | 2020-04-10 | 国际商业机器公司 | Low power combustible gas sensing |
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2020
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060063291A1 (en) * | 2002-11-12 | 2006-03-23 | National Institute Of Adv. Industrial Sci. & Tech | Thermoelectric transducing material thin film, sensor device, and its manufacturing method |
| JP2006201100A (en) * | 2005-01-24 | 2006-08-03 | Matsushita Electric Ind Co Ltd | Hydrogen gas detection sensor |
| CN2901304Y (en) * | 2006-05-25 | 2007-05-16 | 华东理工大学 | Thermal electric film hydrogen sensor |
| CN104677952A (en) * | 2015-03-25 | 2015-06-03 | 海卓赛思（苏州）传感技术有限公司 | High-stability film hydrogen sensor and use method thereof |
| CN110998303A (en) * | 2017-08-10 | 2020-04-10 | 国际商业机器公司 | Low power combustible gas sensing |
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Application publication date: 20210316 |