CN112497051A - Ultra-thin wafer processingequipment - Google Patents

Ultra-thin wafer processingequipment Download PDF

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Publication number
CN112497051A
CN112497051A CN202011301144.2A CN202011301144A CN112497051A CN 112497051 A CN112497051 A CN 112497051A CN 202011301144 A CN202011301144 A CN 202011301144A CN 112497051 A CN112497051 A CN 112497051A
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China
Prior art keywords
plate
wafer
grinding
groove
fixed
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Granted
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CN202011301144.2A
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Chinese (zh)
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CN112497051B (en
Inventor
赵震
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Shenzhen Lizhuan Technology Transfer Center Co ltd
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Linzhang Aohuang Network Technology Co ltd
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Priority to CN202011301144.2A priority Critical patent/CN112497051B/en
Publication of CN112497051A publication Critical patent/CN112497051A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0046—Column grinding machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/007—Weight compensation; Temperature compensation; Vibration damping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention discloses an ultrathin wafer processing device, which structurally comprises a processing mechanism, a rotator, a control switch and a workbench, wherein the rotator and the processing mechanism are positioned on the same central axis, the control switch is embedded on the surface of the upper end of the workbench, the processing mechanism is arranged at the upper end of the workbench, the rotator is fixed at the upper end of the workbench, the extending part of the outer side of a wafer acts on a friction block, the wafer reversely rotates to act on a continuous bending structure of the friction block and a bending plate to generate a bonding force on the wafer, the smoothness of the outer side of the wafer is enhanced while the outer side of the wafer is extended, the problem of inconsistent thickness of the outer side of the wafer is prevented, the fixed ring drives a grinding plate to lift up and down by controlling the lifting of a grinding structure after the wafer is worn, so that the stress structure and the bonding plate are exposed through a clearance groove, the length of the stress structure is increased, need frequently dismantle the change after avoiding grinding the loss, prevent frequently to dismantle the accurate nature that the installation influences grinding structure.

Description

Ultra-thin wafer processingequipment
The invention relates to the field of wafer coating, in particular to an ultrathin wafer processing device.
Background
The wafer grinding device is through the friction between wafer and the grinding pad, and under the help of grinding fluid, make the fine fillings of wafer after grinding circulate along with the grinding fluid, avoid the fine fillings to rub the wafer surface once more, make the wafer surface roughness increase, but after wafer surface and grinding pad take place the friction, the roughness on grinding pad surface descends easily, thereby lead to the frictional force between grinding pad and the wafer to reduce, the change that once grinds and need going on the grinding pad, frequently dismantle and lead to fixing device's not hard up easily, and thinner wafer side is difficult for being laminated fixedly, extend easily in the wafer outside under the grinding force, lead to the wafer outside thickness inconsistent easily, thereby tear easily under rotatory grinding force.
Disclosure of Invention
The invention is realized by the following technical scheme: an ultra-thin wafer processing device, which comprises a processing mechanism, a rotator, a control switch and a workbench, the rotator and the processing mechanism are positioned on the same central axis, the control switch is embedded and fixed on the surface of the upper end of the workbench, the processing mechanism is arranged at the upper end of the workbench, the rotator is fixed at the upper end of the workbench, the processing mechanism is provided with a fixed plate, a telescopic device, a grinding structure, a rotating plate and a fixed structure, the fixed plate penetrates through the inside of the telescopic device, the grinding structure is fixedly attached to the inner side of the lower end of the telescopic device, the lower end of the fixed plate penetrates through the grinding structure, the fixed structure and the grinding structure are positioned on the same central axis, the fixed structure is embedded and fixed at the upper end of the rotating plate, the rotating plate is installed at the upper end of the workbench, a gap is formed in the outer side of the inner portion of the rotating plate, and the fixed plate is in a fixed state.
As a further improvement of the invention, the fixing structure is provided with a blocking mechanism, a stress ring and a placing groove, the blocking mechanism is embedded and fixed on the inner side of the stress ring, the stress ring and the placing groove are positioned on the same central axis, the blocking mechanism is positioned on the outer side of the placing groove, the lower end of the stress ring is installed at the upper end of the rotating plate, the blocking mechanism is of a continuous bending structure, and the placing groove is movably matched with the grinding structure.
As a further improvement of the invention, the blocking mechanism is provided with a connecting plate, a rubber plate, a stress plate and an attaching structure, wherein the connecting plate is positioned on the left side of the rubber plate, the rubber plate is attached to the left side of the stress plate, the attaching structure is embedded and fixed on the right side of the stress plate, the connecting plate is welded on the inner side of the stress ring, the rubber plate is of a continuous broken line structure, and the stress plate and the connecting plate are positioned on the same central axis.
The invention is further improved in that the attaching structure is provided with a sealing groove, a rubber block, a friction block and a bending plate, the rubber block is fixedly embedded at two ends of the side face of the friction block, the bending plate is attached to the rubber block and connected with the rubber block, the sealing groove is positioned on the inner side of the friction block, the bending plate is welded on the side face of the stress plate, the friction block is of an arc-shaped structure, and the friction block and the bending plate form a continuous bending structure.
As a further improvement of the invention, the grinding structure is provided with a grinding plate, a friction structure, air vents and fixing rings, wherein the friction structure penetrates through the grinding plate, thirty air vents are arranged and distributed annularly by taking the grinding plate as a central point to penetrate through each other, the fixing rings are welded on the outer side of the grinding plate, the friction structure is positioned at two sides of the air vents, the fixing rings are embedded and fixed on the inner side of the lower end of the expansion piece, the friction structure is distributed by outward diffusion of the central shaft of the grinding plate, and the diffusion is larger towards the outer side.
As a further improvement of the invention, the friction structure is provided with an attaching plate, a stress structure and a clearance groove, the stress structure is in clearance fit with the clearance groove, the attaching plate penetrates through the clearance groove, the attaching plate is positioned at the upper end of the stress structure, the clearance groove penetrates through the grinding plate, the attaching plate is of a triangular structure, and the adjacent stress structures are arranged and distributed in a reverse direction.
As a further improvement of the invention, the stress structure is provided with a support rod, an arc-shaped knife edge and a movable groove, the arc-shaped knife edge is attached to the side surface of the support rod, the movable groove is connected inside the support rod, the movable groove is positioned on the inner side of the arc-shaped knife edge, the support rod penetrates through the inside of the clearance groove, the arc-shaped knife edge is of an inward inclined structure, and the thickness of the arc-shaped knife edge is increased along with the grinding loss.
Advantageous effects
Compared with the prior art, the invention has the beneficial effects that:
1. when the wafer is ground, the stress plate is extruded, and meanwhile, the extending part of the outer side of the wafer acts on the friction block, so that the friction block is compressed by the rubber block to perform buffering movement towards the direction of the sealing groove, and the wafer rotates reversely to act on the continuous bending structure of the friction block and the bending plate, so that the wafer is attached, the smoothness of the outer side of the wafer is enhanced while the outer side of the wafer is prevented from extending, and the problem of inconsistent thickness of the outer side of the wafer is solved.
2. Through the arc edge of a knife to the wafer grinding, reverse arrangement distributes between the atress structure simultaneously, avoid grinding the scope and produce the space, prevent to grind not thoroughly, grind the structure through control after the wafer loss and go up and down, make solid fixed ring drive lapping plate go up and down, thereby atress structure and attaching plate pass through the clearance groove and expose, increase the length of atress structure, the arc edge of a knife is to the laminating frictional force of wafer in the reinforcing bracing piece, need frequently dismantle the change after avoiding grinding the loss, prevent frequently to dismantle the accurate nature that the installation influences the grinding structure.
Drawings
Fig. 1 is a schematic structural diagram of an ultra-thin wafer processing apparatus according to the present invention.
Fig. 2 is a schematic side view of a processing mechanism according to the present invention.
Fig. 3 is a schematic top view of a fixing structure according to the present invention.
Fig. 4 is a schematic top view of a partial enlarged structure of a blocking mechanism according to the present invention.
Fig. 5 is a schematic view of a partial h-shaped three-dimensional structure of a bonding structure according to the present invention.
FIG. 6 is a schematic top view of a polishing structure according to the present invention.
FIG. 7 is a schematic top view of a friction structure according to the present invention.
Fig. 8 is a schematic perspective view of a stressed structure according to the present invention.
In the figure: the processing mechanism-1, the rotator-2, the control switch-3, the workbench-4, the fixing plate-11, the expansion device-12, the grinding structure-13, the rotating plate-14, the fixing structure-15, the blocking mechanism-51 a, the stress ring-52 a, the placing groove-53 a, the connecting plate-a 1, the rubber plate-a 2, the stress plate-a 3, the attaching structure-a 4, the sealing groove-a 41, the rubber block-a 42, the friction block-a 43, the bending plate-a 44, the grinding plate-w 1, the friction structure-w 2, the ventilation hole-w 3, the fixing ring-w 4, the attaching plate-w 21, the stress structure-w 22, the clearance groove-w 23, the supporting rod-21 w, the arc-shaped knife edge-22 w and the movable groove-23 w.
Detailed Description
The technology of the present invention is further described with reference to the accompanying drawings:
example 1:
as shown in fig. 1-5:
the invention discloses an ultrathin wafer processing device, which structurally comprises a processing mechanism 1, a rotator 2, a control switch 3 and a workbench 4, wherein the rotator 2 and the processing mechanism 1 are positioned on the same central axis, the control switch 3 is embedded and fixed on the surface of the upper end of the workbench 4, the processing mechanism 1 is installed at the upper end of the workbench 4, the rotator 2 is fixed at the upper end of the workbench 4, the processing mechanism 1 is provided with a fixed plate 11, a telescopic device 12, a grinding structure 13, a rotating plate 14 and a fixed structure 15, the fixed plate 11 penetrates through the telescopic device 12, the grinding structure 13 is fixedly attached to the inner side of the lower end of the telescopic device 12, the lower end of the fixed plate 11 penetrates through the grinding structure 13, the fixed structure 15 and the grinding structure 13 are positioned on the same central axis, the fixed structure 15 is embedded and fixed at the upper end of the rotating plate 14, the rotating plate 14 is installed at the upper end of the workbench, the outer side of the inner part of the rotating plate 14 is provided with a gap, the fixed plate 11 is in a fixed state, the expansion of the expansion piece 12 is controlled through the rotator 2, and the worn thickness is supplemented after the expansion, so that the grinding pad is prevented from being manually replaced.
The fixed structure 15 is provided with a blocking mechanism 51a, a force-bearing ring 52a and a placing groove 53a, the blocking mechanism 51a is embedded and fixed inside the force-bearing ring 52a, the force-bearing ring 52a and the placing groove 53a are positioned on the same central axis, the blocking mechanism 51a is positioned outside the placing groove 53a, the lower end of the force-bearing ring 52a is installed at the upper end of the rotating plate 14, the blocking mechanism 51a is a continuous bending structure, the placing groove 53a is movably matched with the grinding structure 13, and the wafers in the placing groove 53a are ground through a grinding pad inside the grinding structure 13.
Wherein, stop mechanism 51a is equipped with connecting plate a1, rubber slab a2, atress board a3, laminating structure a4, connecting plate a1 is located rubber slab a2 left side, rubber slab a2 laminating is on atress board a3 left side, laminating structure a4 inlays and fixes on atress board a3 right side, connecting plate a1 welds at atress ring 52a inboard, rubber slab a2 is continuous broken line structure, atress board a3 is located same central axis with connecting plate a1 for atress board a3 keeps certain laminating frictional force, avoids the atress unstable.
Wherein, laminating structure a4 is equipped with seal groove a41, rubber piece a42, clutch blocks a43, crooked board a44, rubber piece a42 inlays at clutch blocks a43 side both ends, crooked board a44 is connected with the laminating of rubber piece a42, seal groove a41 is located clutch blocks a43 inboard, crooked board a44 welds at the clutch blocks a3 side, clutch blocks a43 is the arc structure, forms continuous bending structure with crooked board a44 for cushion and support when clutch blocks a43 and wafer side frictional contact, avoid the wafer outside to extend.
The embodiment has the following specific use modes and functions:
in the invention, the control switch 3 controls the rotator 2, so that the rotator 2 drives the grinding structure 13 at the lower end of the expansion device 12 to rotate and lift, the wafer is placed in the fixed structure 15 at the upper end of the rotating plate 14, the wafer and the grinding structure 13 are driven to rotate reversely, the wafer is positioned on the surface of the placing groove 53a, the outer side of the wafer is attached to the inner side of the blocking mechanism 51a, when the wafer is grinded, the attaching structure a4 is acted, so that the stress plate a3 presses the connecting plate a1 through the rubber plate a2, meanwhile, the extended part of the outer side of the wafer acts on the friction block a43, so that the friction block a43 is compressed by the rubber block a42 to buffer the movement towards the direction of the sealing groove a41, and the wafer reversely rotates to act on the continuous bending structure of the friction block a43 and the bending plate a44, the wafer is bonded, so that the smoothness of the outer side of the wafer is enhanced while the outer side of the wafer is prevented from extending, and the problem of inconsistent thickness of the outer side of the wafer is prevented.
Example 2:
as shown in fig. 6-8:
wherein, grinding structure 13 is equipped with abrasive disc w1, friction structure w2, bleeder vent w3, solid fixed ring w4, friction structure w2 runs through inside abrasive disc w1, bleeder vent w3 is equipped with thirty and uses abrasive disc w1 to run through each other as central point annular distribution, gu fixed ring w4 welds in abrasive disc w1 outside, friction structure w2 is located bleeder vent w3 both sides, gu fixed ring w4 inlays admittedly at expansion bend 12 lower extreme inboard, friction structure w2 uses abrasive disc w1 center pin outward diffusion distribution, and the diffusion is more big outward for the rotatory wafer that grinds of abrasive disc w1, the heat that the friction produced simultaneously diffuses through bleeder vent w 3.
The friction structure w2 is provided with a laminating plate w21, a stressed structure w22 and a clearance groove w23, the stressed structure w22 is in clearance fit with the clearance groove w23, the laminating plate w21 penetrates through the clearance groove w23, the laminating plate w21 is located at the upper end of the stressed structure w22, the clearance groove w23 penetrates through the grinding plate w1, the laminating plate w21 is of a triangular structure, and the adjacent stressed structures w22 are distributed in a reverse arrangement mode, so that gaps in a grinding range are avoided, and incomplete grinding is prevented.
Wherein, atress structure w22 is equipped with bracing piece 21w, arc edge 22w, activity groove 23w, the laminating of arc edge 22w is in the bracing piece 21w side, activity groove 23w is connected inside the bracing piece 21w, activity groove 23w is located arc edge 22w inboard, bracing piece 21w runs through inside clearance groove w23, arc edge 22w is the leanin structure, and along with the loss arc edge 22 w's of grinding thickness is bigger and bigger, when arc edge 22w and wafer laminating ground, the fine fillings of grinding can get into activity groove 23w and stop, avoid rubbing with the wafer once more.
The embodiment has the following specific use modes and functions:
in the invention, the grinding structure 13 rotates to drive the fixed ring w4 to rotate, so that the friction structure w2 on the surface of the grinding plate w1 grinds the wafer, the stress structure w22 in the friction structure w2 is attached to the surface of the wafer, the wafer is ground through the arc-shaped knife edge 22w, meanwhile, the stress structures w22 are distributed in a reverse arrangement mode, gaps are prevented from being generated in the grinding range, incomplete grinding is prevented, heat generated by friction is diffused through the air holes w3, ground fine scraps can enter the movable groove 23w to stay, secondary friction with the wafer is avoided, after the wafer is worn, the grinding structure 13 is controlled to lift, so that the fixed ring w4 drives the grinding plate w1 to lift, the stress structure w22 and the attachment plate w21 are exposed through the gap groove w23, the length of the stress structure w22 is increased, the attachment friction force of the arc-shaped knife edge 22w in the support rod 21w to the wafer is enhanced, the precision of the grinding structure 13 is prevented from being affected by frequent disassembly and assembly.
The technical scheme of the invention is utilized, or a similar technical scheme is designed by a person skilled in the art based on the inspiration of the technical scheme of the invention, so that the technical effects are achieved, and the technical scheme and the method fall into the protection scope of the invention.

Claims (7)

1. The utility model provides an ultra-thin wafer processingequipment, its structure includes processing agency (1), circulator (2), control switch (3), workstation (4), circulator (2) are located same center axis with processing agency (1), control switch (3) are inlayed and are fixed at workstation (4) upper end surface, processing agency (1) is installed in workstation (4) upper end, the upper end at workstation (4) is fixed in circulator (2), its characterized in that:
the processing mechanism (1) is provided with a fixing plate (11), a telescopic device (12), a grinding structure (13), a rotating plate (14) and a fixing structure (15), wherein the fixing plate (11) penetrates through the inside of the telescopic device (12), the grinding structure (13) is fixedly attached to the inner side of the lower end of the telescopic device (12), the lower end of the fixing plate (11) penetrates through the inside of the grinding structure (13), the fixing structure (15) and the grinding structure (13) are located on the same central axis, the fixing structure (15) is fixedly embedded in the upper end of the rotating plate (14), and the rotating plate (14) is installed on the upper end of a workbench (4).
2. The ultra-thin wafer processing device of claim 1, wherein: the fixing structure (15) is provided with a blocking mechanism (51a), a stress ring (52a) and a placing groove (53a), the blocking mechanism (51a) is embedded and fixed on the inner side of the stress ring (52a), the stress ring (52a) and the placing groove (53a) are located on the same central axis, the blocking mechanism (51a) is located on the outer side of the placing groove (53a), and the lower end of the stress ring (52a) is installed at the upper end of the rotating plate (14).
3. An ultra-thin wafer processing apparatus as claimed in claim 2, wherein: stop gear (51a) are equipped with connecting plate (a1), rubber slab (a2), atress board (a3), laminating structure (a4), connecting plate (a1) are located rubber slab (a2) left side, rubber slab (a2) laminating is on atress board (a3) left side, laminating structure (a4) is inlayed and is fixed on atress board (a3) right side, connecting plate (a1) welding is inboard in atress ring (52 a).
4. An ultra-thin wafer processing apparatus as claimed in claim 3, wherein: laminating structure (a4) is equipped with seal groove (a41), block rubber (a42), clutch block (a43), crooked board (a44), block rubber (a42) is inlayed and is fixed at clutch block (a43) side both ends, crooked board (a44) is connected with block rubber (a42) laminating, seal groove (a41) is located clutch block (a43) inboard, crooked board (a44) welds in atress board (a3) side.
5. The ultra-thin wafer processing device of claim 1, wherein: grind structure (13) and be equipped with abrasive disc (w1), friction structure (w2), bleeder vent (w3), solid fixed ring (w4), friction structure (w2) run through in abrasive disc (w1) inside, bleeder vent (w3) are equipped with thirty and use abrasive disc (w1) to distribute as central point annular and run through each other, gu fixed ring (w4) welds in abrasive disc (w1) outside, friction structure (w2) are located bleeder vent (w3) both sides, gu fixed ring (w4) inlays admittedly at expansion bend (12) lower extreme inboard.
6. An ultra-thin wafer processing apparatus as claimed in claim 5, wherein: the friction structure (w2) is provided with an attaching plate (w21), a force-bearing structure (w22) and a clearance groove (w23), the force-bearing structure (w22) is in clearance fit with the clearance groove (w23), the attaching plate (w21) penetrates through the inside of the clearance groove (w23), the attaching plate (w21) is located at the upper end of the force-bearing structure (w22), and the clearance groove (w23) penetrates through the inside of the grinding plate (w 1).
7. An ultra-thin wafer processing apparatus as claimed in claim 6, wherein: atress structure (w22) is equipped with bracing piece (21w), arc edge of a knife (22w), activity groove (23w), the laminating of arc edge of a knife (22w) is in bracing piece (21w) side, activity groove (23w) are connected inside bracing piece (21w), it is inboard that activity groove (23w) are located arc edge of a knife (22w), bracing piece (21w) run through inside in clearance groove (w 23).
CN202011301144.2A 2020-11-19 2020-11-19 Ultra-thin wafer processingequipment Active CN112497051B (en)

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Application Number Priority Date Filing Date Title
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CN112497051B CN112497051B (en) 2022-02-18

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09109005A (en) * 1995-10-20 1997-04-28 Fujitsu Ltd Substrate polishing device and method
US20110223835A1 (en) * 2010-03-12 2011-09-15 Duescher Wayne O Three-point spindle-supported floating abrasive platen
CN108857863A (en) * 2018-07-02 2018-11-23 江苏纳沛斯半导体有限公司 A kind of shockproof grinding wafer machine
CN209408215U (en) * 2018-10-29 2019-09-20 深圳市博拓孚工业科技有限公司 Liquid crystal polisher lapper
CN110977653A (en) * 2019-12-23 2020-04-10 泉州圆创机械技术开发有限公司 Wafer planarization equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09109005A (en) * 1995-10-20 1997-04-28 Fujitsu Ltd Substrate polishing device and method
US20110223835A1 (en) * 2010-03-12 2011-09-15 Duescher Wayne O Three-point spindle-supported floating abrasive platen
CN108857863A (en) * 2018-07-02 2018-11-23 江苏纳沛斯半导体有限公司 A kind of shockproof grinding wafer machine
CN209408215U (en) * 2018-10-29 2019-09-20 深圳市博拓孚工业科技有限公司 Liquid crystal polisher lapper
CN110977653A (en) * 2019-12-23 2020-04-10 泉州圆创机械技术开发有限公司 Wafer planarization equipment

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