CN112490386A - OLEDoS micro-display device and preparation method thereof - Google Patents
OLEDoS micro-display device and preparation method thereof Download PDFInfo
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- CN112490386A CN112490386A CN202011356083.XA CN202011356083A CN112490386A CN 112490386 A CN112490386 A CN 112490386A CN 202011356083 A CN202011356083 A CN 202011356083A CN 112490386 A CN112490386 A CN 112490386A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 130
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 12
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000008395 clarifying agent Substances 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 12
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 9
- 238000006124 Pilkington process Methods 0.000 claims description 8
- 238000005352 clarification Methods 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000006060 molten glass Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000265 homogenisation Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000006025 fining agent Substances 0.000 claims description 2
- 239000002351 wastewater Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000005407 aluminoborosilicate glass Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 14
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 11
- 230000008901 benefit Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004031 devitrification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B18/00—Shaping glass in contact with the surface of a liquid
- C03B18/02—Forming sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention especially relates to an OLEDoS micro-display device and a preparation method thereof, belonging to the technical field of display manufacturing, wherein a drive chip prepared based on a CMOS process is used as an anode of the device; growing an organic light-emitting material on the surface of a chip, covering the top of the device, and using a glass plate with an ITO layer as a cathode of the device, wherein the glass component of the glass plate comprises the following components in percentage by mass: SiO 22：56％‑64％、B2O3：8％‑15％、Al2O3：12％‑16％、MgO：5％‑9％、CaO：6％‑8％、BaO：2％‑4％、La2O3：1％‑4％、Y2O3: 1 to 4 percent of the total weight of the mixture, and the balance of clarifying agent and inevitable impurities; the glass plate for the OLEDoS micro-display device provided by the embodiment of the invention is the aluminoborosilicate glass with high strain point, low expansion coefficient, high elastic modulus and basically alkali-free high elastic modulus, and can enable the OLEDoS micro-display device to have very good thermal stability and high reliability when being applied to the OLEDoS micro-display device.
Description
Technical Field
The invention belongs to the technical field of display manufacturing, and particularly relates to an OLEDoS micro-display device and a preparation method thereof.
Background
In a highly information-oriented society, the role played by the oled os microdisplay technology is more and more important, and compared with the liquid crystal flat panel display technology, the oled os microdisplay technology is an active light emitting device and has the advantages of high brightness, high response speed, light weight, low power consumption and the like. Therefore, the method has wide application in military helmets, medical treatment, consumer electronics and the like.
The OLEDoS micro-display device consists of a silicon-based substrate and a glass plate. These glass sheets must meet high standards:
(1) has higher glass strain temperature, so that the substrate glass is converted to have high thermal stability;
(2) the glass has a thermal expansion coefficient closer to that of silicon crystal so as to open the possibility of embedding the silicon chip on the glass;
(3) chemical resistance, which enables the manufacturing process to be carried out under severe etching conditions;
(4) alkali metal ions are prevented from migrating out of the glass surface to damage components such as transistors;
(5) higher specific modulus of elasticity.
(6) The clarifier with excellent performance is difficult to clarify and form the alkali-free glass, and in the process of melting the glass, the glass is easy to melt unevenly to generate stripes, and especially the bubbles in the process of clarifying the glass are difficult to discharge.
Disclosure of Invention
In view of the above problems, the present invention has been made to provide an OLEDoS micro display device and a method of fabricating the same that overcome or at least partially solve the above problems.
The embodiment of the invention provides an OLEDoS micro-display device, wherein a drive chip prepared based on a CMOS (complementary metal oxide semiconductor) process is used as an anode of the device; growing an organic light-emitting material on the surface of a chip, covering the top of the device, and using a glass plate with an ITO layer as a cathode of the device, wherein the glass component of the glass plate comprises the following components in percentage by mass: SiO 22：56％-64％、B2O3：8％-15％、Al2O3：12％-16％、MgO：5％-9％、CaO：6％-8％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 1% -4%, the rest is clarifying agent andinevitable impurities.
Optionally, the SiO2The content of the components is 58 to 62 percent by weight.
Optionally, B is2O3The content of the components is 8 to 12 percent by weight.
Optionally, the Al2O3The content of the components is 13 to 16 percent by weight.
Optionally, the MgO is 5-7 wt%.
Optionally, the weight percentage content of the CaO is 6-7%.
Optionally, the Y is2O3The content of the components is 2 to 3 percent by weight.
Optionally, the fining agent comprises at least one of calcium sulfate, tin oxide, and cerium oxide.
Optionally, the glass comprises the following components in percentage by mass: SiO 22：56％-64％、B2O3：8％-15％、Al2O3：12％-16％、MgO：5％-9％、CaO：6％-8％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 1% -4%, calcium sulfate: 0.1% -0.8%, tin oxide: 0.5% -0.6%, cerium oxide: 0.5% -1.5% and inevitable impurities.
Based on the same inventive concept, the embodiment of the invention also provides a preparation method of the OLEDoS micro-display device, which comprises the following steps:
proportioning raw materials of the glass plate;
processing the raw materials by adopting a float glass process to obtain a glass plate;
arranging an organic light-emitting material and the glass plate on a driving chip prepared based on a CMOS (complementary metal oxide semiconductor) process to obtain an OLEDoS (organic light emitting diode on silicon) micro-display device;
the method comprises the following steps of (1) processing the raw materials by adopting a float glass process:
controlling the glass liquid flow melting time to be 6-8 hours, wherein the melting temperature in the melting tank is 1550 ℃, the clarification homogenization temperature is 1530 ℃, the molding temperature is 1240 ℃, the liquid phase temperature is 1130 ℃, and the annealing temperature is 710 ℃;
the pressure in the head space of the molten glass was controlled to 200 torr or less by using a vacuum pump, and the molten glass was introduced into the working cell.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
according to the OLEDoS micro-display device provided by the embodiment of the invention, the driving chip prepared based on the CMOS process is used as the anode of the device; growing an organic light-emitting material on the surface of a chip, covering the top of the device, and using a glass plate with an ITO layer as a cathode of the device, wherein the glass component of the glass plate comprises the following components in percentage by mass: SiO 22：56％-64％、B2O3：8％-15％、Al2O3：12％-16％、MgO：5％-9％、CaO：6％-8％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 1 to 4 percent of the total weight of the mixture, and the balance of clarifying agent and inevitable impurities; the glass plate for the OLEDoS micro-display device provided by the embodiment of the invention is the aluminoborosilicate glass with high strain point, low expansion coefficient, high elastic modulus and basically alkali-free high elastic modulus, and can enable the OLEDoS micro-display device to have very good thermal stability and high reliability when being applied to the OLEDoS micro-display device.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a flow chart of a method of preparation provided by an embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments and examples, and the advantages and various effects of the present invention will be more clearly apparent therefrom. It will be understood by those skilled in the art that these specific embodiments and examples are for the purpose of illustrating the invention and are not to be construed as limiting the invention.
Throughout the specification, unless otherwise specifically noted, terms used herein should be understood as having meanings as commonly used in the art. Accordingly, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. If there is a conflict, the present specification will control.
Unless otherwise specifically stated, various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or can be prepared by existing methods.
Example 1
An OLEDoS micro-display device is characterized in that a driving chip prepared based on a CMOS (complementary metal oxide semiconductor) process is used as an anode of the device; growing an organic light-emitting material on the surface of a chip, covering the top of the device, and using a glass plate with an ITO layer as a cathode of the device, wherein the glass component of the glass plate comprises the following components in percentage by mass: SiO 22：56％-64％、B2O3：8％-15％、Al2O3：12％-16％、MgO：5％-9％、CaO：6％-8％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 1 to 4 percent of the total weight of the waste water, and the balance of clarifying agent and inevitable impurities.
In the embodiment, the clarifying agent is at least one of 0.1-0.8% of calcium sulfate, 0.1-0.8% of tin oxide and 0.5-1.5% of cerium oxide, and 1. the composite clarifying agent has a better clarifying effect and solves the problems of high melting temperature, high viscosity, high surface tension and difficult clarification of the high-aluminum alkali-free borosilicate glass; 2. the clarifying method can effectively reduce the content of bubbles in the molten glass and is not easy to generate secondary bubbles; 3. the corrosion to refractory materials is reduced; specifically, the glassThe glass comprises the following components in percentage by mass: SiO 22：56％-64％、B2O3：8％-15％、Al2O3：12％-16％、MgO：5％-9％、CaO：6％-8％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 1% -4%, calcium sulfate: 0.1% -0.8%, tin oxide: 0.1% -0.8%, cerium oxide: 0.5% -1.5% and inevitable impurities.
As an alternative embodiment, the glass composition of the glass sheet comprises, in mass fractions: SiO 22：58％-62％、B2O3：8％-12％、Al2O3：13％-16％、MgO：5％-8％、CaO：6％～7％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 2% -4%, calcium sulfate: 0.1% -0.8%, tin oxide: 0.5% -0.6%, cerium oxide: 0.5% -1.5% and inevitable impurities.
The glass prepared by adopting the components and the mixture ratio has the density of less than 2.38g/cm3The average linear expansion coefficient of the material is more than 31 multiplied by 10 within the range of 20 to 300 DEG C-7/° C, less than 39 x 10-7/° C, preferably less than 38X 10-7/° c; strain point greater than 650 ℃, preferably no less than 660 ℃; elastic modulus greater than 7.3kg/mm2Preferably greater than 7.4kg/mm2More preferably greater than 7.5kg/mm2The glass is applied to an OLEDoS micro-display device, so that the brightness of the device can be improved, the thermal stability and the reliability of the device are improved, and the intensity of the anti-vacuum pressure of the device is improved.
In this example, SiO2The weight percentage of (A) is 56-64%. SiO 22Is the main glass network forming agent, can reduce the thermal expansion coefficient and the density of the glass, improve the strain point of the glass, but increase the melting point of the glass. SiO 22When the content is less than 58 wt%, a glass having low expansion, low density and high strain point is not easily obtained, and chemical stability such as acid resistance of the glass is lowered; SiO 22When the content is more than 64 wt%, the high-temperature viscosity of the glass is increased, so that the glass melting temperature is too high, the glass melting is difficult, and the control is preferably 58-62%, more preferably 58-62%59-60%.
B2O3Is a glass network former and a fluxing agent which can reduce the viscosity of the glass and improve the stability of the glass, B in the invention2O3The weight percentage of (B) is 8-15%, B2O3Content less than 8 wt%, inability to act as a fluxing agent, and adverse effects on reducing glass density, and poor ability of glass to resist buffer hydrofluoric acid solution, B2O3When the content exceeds 15 wt%, the strain point of the glass is greatly lowered, the acid resistance of the glass is lowered, the tendency of phase separation of the glass is increased, and the stability of the glass is lowered, preferably 8 to 12%, more preferably 9 to 11%.
Al2O3Can obviously improve the strain point and the elastic modulus of the glass, increase the chemical stability of the glass, increase the stability of the glass, reduce the thermal expansion coefficient of the glass and Al2O3Another advantage of (a) is that the modulus of elasticity of the glass can be increased. Al (Al)2O3The content is lower than 12 wt%, alkali-free glass with high strain point is not easy to obtain, the chemical stability of the glass is not enough, and the improvement of the elastic modulus of the glass is not facilitated; al (Al)2O3The content of more than 16 wt% can obviously increase the high-temperature viscosity of the glass, so that the melting temperature is increased, preferably controlled within 13-16%, more preferably controlled within 14-15%.
MgO has the functions of reducing the high-temperature viscosity of the glass and increasing the low-temperature viscosity, and can also obviously improve the elastic modulus of the glass. In the invention, the content is limited to 5-9 wt%, and the MgO content is higher than 9 wt%, so that the stability of the glass is reduced, the liquid phase temperature is increased, and the devitrification resistance of the glass is reduced. In order to improve the elastic modulus of the glass, the elastic modulus is preferably controlled to be 5 to 8%, and more preferably controlled to be 5 to 7%.
CaO also has the effects of reducing the high-temperature viscosity and increasing the low-temperature viscosity of the glass, plays a role of a fluxing agent and can increase the acid resistance of the glass. In the invention, the CaO content is limited to 6-8 wt%, and the CaO content is more than 8 wt%, so that the expansion coefficient of the glass is excessively increased, the capability of the glass in resisting a hydrofluoric acid solution is reduced, the stability of the glass is reduced, and the devitrification tendency of the glass is increased; the content of CaO is less than 6 wt%, which is unfavorable for lowering glass melting temperature and improving acid resistance of glass, and is preferably controlled to be 6-7%.
BaO has the functions of increasing the chemical stability of the glass and improving the devitrification resistance of the glass, and the invention discovers that by adding barium oxide in the absence of strontium oxide, on the one hand, very low density can be achieved, and on the other hand, high specific elastic modulus can be achieved, and the special requirements for viscosity curve and high transition temperature are also met.
La2O3The expansion coefficient can be reduced, and the thermal stability of the glass and the thermodynamic matching property with a silicon-based material are improved. In this example, La2O3The content of (B) is 1-4 wt%. La2O3When the content of (b) is less than 1 wt%, the effect is not significant; above 4 wt%, the melting temperature is high and the glass cost is excessively increased. Preferably 2 to 4%, more preferably 2 to 3%.
Y2O3The elastic modulus of the glass can be remarkably improved, the melting temperature of the glass can be reduced, and the content of Y2O3 is 1-4 wt%. Y is2O3When the content of (B) exceeds 4 wt%, the crystallization stability of the glass is not good, and the cost of the glass is excessively increased, preferably 2 to 4%, more preferably 2 to 3%.
Example 2
A method of fabricating an OLEDoS micro-display device, the method comprising:
s1, proportioning raw materials of a glass plate; the glass substrate of the OLEDoS micro-display device comprises the following basic glass oxides in percentage by weight: 60% SiO2、9％B2O3、12％Al2O3、6％MgO、6％CaO、3％BaO、1％La2O3、1.5％Y2O30.8 percent of calcium sulfate, 0.5 percent of tin oxide and 1 percent of cerium oxide.
S2, processing the raw materials by adopting a float glass process to obtain a glass plate;
s3, arranging an organic light-emitting material and the glass plate on a driving chip prepared based on a CMOS (complementary metal oxide semiconductor) process to obtain an OLEDoS (organic light emitting diode on silicon) micro-display device;
the method comprises the following steps of (1) processing the raw materials by adopting a float glass process:
s2.1, controlling the melting time of the glass liquid flow to be 6-8 hours, wherein the melting temperature in a melting tank is 1550 ℃, the clarification homogenization temperature is 1530 ℃, the molding temperature is 1240 ℃, the liquid phase temperature is 1130 ℃, and the annealing temperature is 710 ℃;
s2.2, controlling the pressure of the upper space of the molten glass to be below 200 torr by using a vacuum pump, and entering a working pool.
The performance indexes of the substrate glass of the OLEDoS micro-display device processed and formed by the method are as follows: (1) strain temperature: 680 ℃; (2) average linear thermal expansion coefficient (α 20 to 300 ℃): 38X 10-7/° c; (3) density: 2.383g/cm3(ii) a (4) The modulus of elasticity is 7.4kg/mm2The application of the glass enables an OLEDoS micro-display device to have higher brightness, very good thermal stability and high reliability.
Example 3
The preparation method of this example is the same as that provided in example 2 except that,
s1, proportioning raw materials of a glass plate; the glass substrate of the OLEDoS micro-display device comprises the following basic glass oxides in percentage by weight: 56% SiO2、10％B2O3、13％Al2O3、6％MgO、7％CaO、2.5％BaO、2％La2O3、2％Y2O30.5 percent of calcium sulfate, 0.5 percent of tin oxide and 0.5 percent of cerium oxide.
The performance indexes of the prepared substrate glass of the OLEDoS micro-display device are as follows: (1) strain temperature: 670 ℃; (2) average linear thermal expansion coefficient (α 20 to 300 ℃): 37X 10-7/° c; (3) density: 2.390g/cm3(ii) a (4) The modulus of elasticity is 7.5kg/mm2The glass is particularly suitable for manufacturing the glass substrate of an OLEDoS micro-display device.
In the above examples, the density ρ of the glass was measured by the Archimedes method; the coefficient of thermal expansion at 20-300 ℃ is measured using an dilatometer and expressed as the average coefficient of expansion; the strain point of the glass is measured by a bending beam method specified by ASTMC 598; the elastic modulus was measured by the resonance method.
Through each physical and chemical property requirement of embodiment 2 and 3, can satisfy the requirement of OLEDoS micro-display device display screen substrate glass manufacturing process completely, compare with current substrate glass, simple process, the glass liquid is easily melted, is clarified, homogenized, and glass density is lower, and the elastic modulus is higher, is the OLEDoS micro-display device substrate glass who is fit for large-scale float process production.
One or more technical solutions in the embodiments of the present invention at least have the following technical effects or advantages:
(1) the glass provided by the embodiment of the invention has the advantages of high strain point, low expansion coefficient, high elastic modulus and basically alkali-free aluminoborosilicate glass with high elastic modulus, and can enable an OLEDoS micro-display device to have very good thermal stability and high reliability when being applied to the OLEDoS micro-display device.
(2) According to the glass formula provided by the embodiment of the invention, the specific rare earth element and the specific clarifying agent are added in the glass forming process, so that the melting of the glass can be better improved, the clarification and the homogenization are promoted, particularly, the devitrification of the glass can be effectively prevented, the liquid phase temperature of the glass is reduced, the devitrification speed of the glass is delayed, the glass is suitable for the production process of float glass, and the subsequent processing and use are facilitated;
(3) the glass formula provided by the embodiment of the invention can improve the chemical stability of the glass, reduce the expansion coefficient and enable the glass to meet the performance requirements of the substrate glass of the OLEDoS micro-display device;
(4) the glass provided by the embodiment of the invention can completely meet the requirements of the manufacturing process of the substrate glass of the display screen of the liquid crystal display, and compared with the existing substrate glass, the glass has the advantages of simple process, easy melting, clarification and homogenization of glass liquid, lower glass density, higher elastic modulus, high strain, low expansion coefficient and chemical resistance, and basically no alkali in the raw materials.
(5) The glass provided by the embodiment of the invention is the liquid crystal display substrate glass suitable for large-scale float process production.
Finally, it should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. An OLEDoS micro-display device is characterized in that a driving chip prepared based on a CMOS (complementary metal oxide semiconductor) process is used as an anode of the OLEDoS micro-display device; growing an organic light-emitting material on the surface of a chip, covering the top of the device, and using a glass plate with an ITO layer as a cathode of the device, wherein the glass component of the glass plate comprises the following components in percentage by mass: SiO 22：56％-64％、B2O3：8％-15％、Al2O3：12％-16％、MgO：5％-9％、CaO：6％-8％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 1 to 4 percent of the total weight of the waste water, and the balance of clarifying agent and inevitable impurities.
2. The OLEDoS microdisplay device of claim 1 in which the SiO2The content of the components is 58 to 62 percent by weight.
3. The OLEDoS microdisplay device of claim 1 in which the B2O3The content of the components is 8 to 12 percent by weight.
4. The OLEDoS microdisplay device of claim 1 in which the Al is2O3The content of the components is 13 to 16 percent by weight.
5. The OLEDoS microdisplay device of claim 1 wherein the MgO is present in an amount of 5% to 7% by weight.
6. The OLEDoS microdisplay device of claim 1 in which the CaO content is 6% to 7% by weight.
7. The OLEDoS microdisplay device of claim 1 in which the Y is a Y-plane2O3The content of the components is 2 to 3 percent by weight.
8. The OLEDoS microdisplay device of claim 1 in which the fining agent comprises at least one of calcium sulfate, tin oxide, and cerium oxide.
9. The OLEDoS microdisplay device of claim 8 in which the glass composition comprises, in mass fraction: SiO 22：56％-64％、B2O3：8％-15％、Al2O3：12％-16％、MgO：5％-9％、CaO：6％-8％、BaO：2％-4％、La2O3：1％-4％、Y2O3: 1% -4%, calcium sulfate: 0.1% -0.8%, tin oxide: 0.5% -0.6%, cerium oxide: 0.5% -1.5% and inevitable impurities.
10. A preparation method of an OLEDoS micro-display device is characterized by comprising the following steps: the method comprises the following steps:
proportioning raw materials of the glass plate;
processing the raw materials by adopting a float glass process to obtain a glass plate;
arranging an organic light-emitting material and the glass plate on a driving chip prepared based on a CMOS (complementary metal oxide semiconductor) process to obtain an OLEDoS (organic light emitting diode on silicon) micro-display device;
the method comprises the following steps of (1) processing the raw materials by adopting a float glass process:
controlling the glass liquid flow melting time to be 6-8 hours, wherein the melting temperature in the melting tank is 1550 ℃, the clarification homogenization temperature is 1530 ℃, the molding temperature is 1240 ℃, the liquid phase temperature is 1130 ℃, and the annealing temperature is 710 ℃;
the pressure in the head space of the molten glass was controlled to 200 torr or less by using a vacuum pump, and the molten glass was introduced into the working cell.
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| CN102417300A (en) * | 2011-08-31 | 2012-04-18 | 中国科学院微电子研究所 | Glass for liquid crystal display and manufacture method thereof |
| CN102424525A (en) * | 2011-09-05 | 2012-04-25 | 中国科学院微电子研究所 | FED flat panel display |
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