CN112485979A - Multi-beam control multi-electron beam lithography equipment and lithography method - Google Patents
Multi-beam control multi-electron beam lithography equipment and lithography method Download PDFInfo
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The invention discloses multi-beam control multi-electron beam lithography equipment and a lithography method, wherein the lithography equipment comprises a multi-laser beam array device and a multi-electron beam array device, the multi-laser beam array device comprises a laser light source, a laser parallel beam expander and a digital micro-mirror array, and the multi-electron beam array device comprises a cathode, an optical-electronic conversion emission array, an anode, an accelerating anode, a magnetic focusing array, a photonic array, a magnetic focusing objective lens and a sample platform. The multi-electron beam control multi-electron beam lithography equipment and the multi-electron beam control multi-electron beam lithography method can greatly increase the number of controllable electron beams, increase the number of effective exposure points, reduce the total exposure times, reduce the electron beam lithography writing time, greatly improve the efficiency and the throughput of electron beam lithography, are expected to enable the multi-electron beam lithography equipment to exceed the lithography efficiency and the resolution of the traditional lithography equipment taking light as a medium, and promote the multi-electron beam lithography equipment to become practical lithography equipment with strong competitiveness.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to multi-beam control multi-electron beam photoetching equipment and a photoetching method.
Background
The most important process in the manufacture of semiconductor integrated circuits is photolithography, which transfers a pre-designed circuit pattern onto a photoresist layer coated on a semiconductor wafer, and then transfers the photoresist pattern onto the semiconductor wafer through an etching process. With the line width of integrated circuits decreasing and becoming more complex, the conventional photo lithography apparatus using photons as medium becomes more complex and has higher resolution requirement, and the conventional photo lithography system using light as medium cannot meet the lithography requirement of finer nanometer line width due to the problem of diffraction limit of light and the problem of high absorption rate of air to ultraviolet light.
Researchers have begun exploring new media for high-precision lithography systems that utilize shorter wavelength high-energy particles or radiation. The de Broglie wavelength of the high-speed moving electrons can reach sub-nanometer or even shorter, and the electron beam is used as a medium to realize the photoetching process, so that the high resolution of nanometer or even sub-nanometer can be generated. Although the existing electron beam lithography equipment is developed rapidly, the lithography precision and the lithography efficiency of the traditional deep ultraviolet lithography equipment are not achieved, and great development space is provided for reducing the electron beam writing time and improving the production throughput.
Therefore, it is desirable to develop a multi-electron beam lithography apparatus with high throughput and high efficiency to solve the problems and disadvantages of the existing electron beam lithography technology.
Disclosure of Invention
It is an object of the present invention to provide a multi-beam controlled multi-electron beam lithographic apparatus and lithographic method that overcomes or at least alleviates at least one of the above mentioned disadvantages of the prior art.
In order to achieve the above object, the present invention provides a multi-beam controlled multi-electron beam lithography apparatus, including a multi-laser beam array device and a multi-electron beam array device, wherein the multi-laser beam array device includes a laser light source, a laser parallel beam expander and a digital micromirror array, and the multi-electron beam array device includes a cathode, an optical-electronic conversion emission array, an anode, an acceleration anode, a magnetic focusing array, an optical wave array, a magnetic focusing objective lens and a sample stage, wherein:
the laser light source emits laser beams, the laser beams form parallel multiple laser beams through the laser parallel beam expander, the parallel multiple laser beams irradiate the digital micro-reflector array, and the digital micro-reflector array selectively reflects the beams according to a preset photoetching pattern to form a patterned parallel laser beam array;
the patterned parallel laser beam array irradiates the photo-electron conversion emission array on the cathode, each laser beam irradiates the photo-electron conversion emission array to generate an electron beam, and the patterned parallel laser beam array forms a patterned parallel electron beam array through the photo-electron conversion emission array;
the anode and the accelerating anode are in a hole structure, the anode guides the patterned parallel electron beam array to emit from the cathode, the accelerating anode accelerates electrons, and the patterned parallel electron beam array passes through the anode and the accelerating anode through the hole to reach the magnetic focusing array;
the magnetic focusing array focuses each electron beam to reduce the diameter of each electron beam, and the optical array removes divergent light to reduce the diameter of each electron beam in the graphical parallel electron beam array passing through the optical array;
and the magnetic focusing objective lens focuses and projects the received graphical parallel electron beam array onto the photoresist of the wafer on the sample stage.
Preferably, the pixel resolution of the digital micro-mirror array is 720p, 2K, 4K or more than 8K, each pixel corresponds to one digital micro-mirror, and the switching speed reaches microsecond level.
Preferably, the digital micro-mirror array is distributed in a square array or a hexagonal array, and the light-electron conversion emission array is distributed in a square array or a hexagonal array corresponding to the digital micro-mirror array.
Preferably, the photo-electron conversion emission array is a metal, an alloy or a semiconductor material having an einstein photoelectric effect.
Preferably, the laser light source is a short-wavelength laser.
Preferably, the size of the aperture of the diaphragm in the diaphragm array is nanometer, and each laser beam is collimated and screened according to the position and the size of the aperture to remove divergent light, so that the diameter of each electron beam in the graphical parallel electron beam array passing through the diaphragm array is reduced to nanometer.
The present invention also provides a multi-beam controlled multi-electron beam lithography method using the multi-beam controlled multi-electron beam lithography apparatus as described above, the method comprising:
the parallel beam expander expands the laser emitted by the laser to obtain a plurality of parallel laser beams;
controlling the deflection of the micro-reflectors on each pixel in the digital micro-reflector array according to a preset photoetching pattern, and selectively reflecting the multiple laser beams irradiated on the digital micro-reflector array to form a patterned parallel laser beam array; the imaging parallel laser beam array irradiates the light-electron conversion emission array on the cathode to generate an imaging parallel electron beam array; wherein each laser beam irradiates the photo-electron conversion emission array to generate an electron beam;
directing the patterned array of parallel electron beams to emit from the cathode using the anode and the accelerating anode;
the patterned parallel electron beam array penetrating through the anode and the accelerating anode reaches the magnetic focusing array, and penetrates through the magnetic focusing array to reach the optical array; focusing each electron beam by using the magnetic focusing array to reduce the diameter of each electron beam, and removing divergent light by using the optical array to reduce the diameter of each electron beam in the graphical parallel electron beam array passing through the optical array;
and the graphical parallel electron beam array penetrating through the optical wave array reaches the magnetic focusing objective lens, and the graphical parallel electron beam array is focused and projected onto the photoresist of the wafer on the sample stage by using the magnetic focusing objective lens.
Due to the adoption of the technical scheme, the invention has the following advantages:
by adopting the multi-beam-controlled multi-electron beam lithography equipment and the multi-electron beam lithography method provided by the embodiment of the invention, the number of controllable electron beams can be greatly increased, the number of effective exposure points can be increased, the total exposure times can be reduced, the electron beam lithography writing time can be reduced, the electron beam lithography efficiency and throughput can be greatly improved, the multi-electron beam lithography equipment is expected to exceed the lithography efficiency and resolution of the traditional lithography equipment taking light as a medium, and the multi-electron beam lithography equipment is promoted to become practical lithography equipment with strong competitiveness.
Drawings
Fig. 1 is a schematic view of a multi-electron beam lithography apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic flow chart of a multi-beam controlled multi-electron beam lithography method according to an embodiment of the present invention.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
The conventional single electron beam equipment is well developed, such as transmission electron microscope and scanning electron microscope, and the principle of the equipment is to control the continuous scanning of the single electron beam to realize the exposure function, but the similar single electron beam system has slow scanning exposure speed and is not suitable for being used as the lithography equipment.
The multi-electron beam lithography is imaging exposure in a pixel projection mode in parallel by using multiple electron beams, can obviously improve the exposure speed of electrons, is more suitable for large-scale industrial production, and has the core of generating and controlling the multiple electron beams. At present, multi-electron beam lithography mainly has three modes, one mode is that a single electron source is divided into a plurality of beams, and then an electron magnetic deflection switch array is used for controlling the on or off of the single electron beam to realize graphical exposure, which opens up the precedent of multi-electron beam lithography, but the more electron beams are, the more uneven the intensity of the single electron beam is, and the more complicated the electron magnetic deflection switch array is; the second mode is to realize the selective emission of electron beams by controlling the switch of the multi-electron source array through a complex circuit, thereby realizing the patterned exposure, and the mode has the problem of complex control structures of the multi-electron source array and the circuit and is difficult to meet the control requirements of large-scale electron beam arrays; the third mode is that a plurality of acousto-optic modulators modulate a plurality of lasers on a switch, then the back of a photo-cathode is irradiated, electrons are emitted from the front of an exciting light cathode to form a plurality of electron beams, and then the photo-resist is bombarded to form a photo-etching pattern.
An embodiment of the present invention provides a multi-electron beam lithography apparatus, as shown in fig. 1, the multi-electron beam lithography apparatus includes a multi-laser beam array device and a multi-electron beam array device, wherein the multi-laser beam array device includes a laser light source 1, a laser parallel beam expander 2 and a digital micromirror array 3, and the multi-electron beam array device includes a cathode 4, an optical-electronic conversion emission array 5, an anode 6, an acceleration anode 7, a magnetic focusing array 8, a smooth wave array 9, a magnetic focusing objective lens 10, and a sample stage 11.
Wherein the laser light source 1 emits a laser beam. Preferably, the laser light source 1 is a short wavelength laser. The single photon energy of the short wavelength laser is larger than the electron work function of the corresponding electron emission material. The laser source can be a single or a plurality of parallel laser sources which are parallel to generate uniform parallel laser beams.
The light beam emitted by the laser light source 1 forms parallel multiple laser beams through the laser parallel beam expander 2, the parallel multiple laser beams irradiate the digital micro-reflector array 3, and the digital micro-reflector array 3 selectively reflects the light beams according to a preset photoetching pattern to form a patterned parallel laser beam array.
The resolution of the digital micro-mirror array 3 is above 720p, 2K, 4K or 8K, each pixel corresponds to one digital micro-mirror, the switching speed reaches microsecond level, and the performance is stable and reliable. The digital micromirror array can control multiple beams, and the number of electron beams can be scaled up to millions or even tens of millions of beams. The position and the number of the light beams are controlled by the digital micro-reflector array, so that the patterned parallel laser beam array is realized, and the pattern control is simple and efficient. The figure can be input by a computer, the figure of the digital micro-reflector array corresponding to the preset photoetching figure is set, and the deflection of the corresponding micro-reflector in the digital micro-reflector array is controlled according to the figure, so that the laser beam is selectively reflected to form the patterned parallel laser beam array.
The patterned parallel laser beam array irradiates the photo-electron conversion emission array 5 on the cathode 4, each laser beam irradiates the photo-electron conversion emission array 5 to generate an electron beam, and the patterned parallel laser beam array forms a patterned parallel electron beam array through the photo-electron conversion emission array 5. The light-electron conversion emission points in the light-electron conversion emission array 5 correspond to the pixel points of the digital micro-mirror array one by one in the same arrangement mode, a certain light-electron conversion emission point is irradiated by the laser reflected by the corresponding digital micro-mirror to emit photons, and if some digital micro-mirrors do not reflect the laser to the corresponding light-electron conversion emission points, the light-electron conversion emission points do not emit photons.
The photo-electron emission array 5 is a metal, alloy array or semiconductor material with einstein photoelectric effect prepared on a semiconductor silicon, silicon carbide or gallium nitride wafer, for example, metal or alloy of zinc, rubidium, magnesium, lithium, silver, platinum, etc., and its pixel and array structure corresponds to the pixel and array structure of a digital micro-mirror, and corresponds to an array generating millions, millions or more electron beams.
Preferably, the digital micro-mirror array 3 may be a square array distribution or a hexagonal array distribution, and the photo-electron conversion emission array 5 is a square array distribution or a hexagonal array distribution corresponding to the digital micro-mirror array 3.
It will be readily understood that the digital micromirror array 3 may have other distribution patterns, and accordingly, the photo-electron converting emission array 5 may have the same distribution pattern as the digital micromirror array 3 to ensure that each laser beam irradiates the photo-electron converting emission array to generate an electron beam, and the patterned parallel laser beam array forms a patterned parallel electron beam array through the photo-electron converting emission array.
Preferably, the multi-beam-controlled multi-electron beam lithography device is characterized in that an optical-electronic conversion emission array, an anode, an accelerating anode, a magnetic focusing array, a smooth array, a magnetic focusing objective lens and a sample stage are sequentially and vertically arranged from top to bottom.
The anode 6 and the accelerating anode 7 are in a hole configuration, the anode 6 directs the patterned parallel electron beam array to emit from the cathode 4, the accelerating anode 7 accelerates electrons, and the patterned parallel electron beam array passes through the anode 6 and the accelerating anode 7 through the holes to the magnetic focusing array 8. Wherein the apertures of the anode 6 and the accelerating anode 7 are configured such that the patterned array of parallel electron beams passes through, while the other electron beams are absorbed by the anode 6 and the accelerating anode 7. Preferably, the anode 6 is a metal plate with a positive voltage and an array of micro-holes, the diameter of the micro-holes is the same as or similar to that of the photo-electron conversion emission points, and the size and arrangement of the array of micro-holes are the same as those of the photo-electron conversion emission array. The accelerating anode 7 and the anode 6 have the same structure, and the forward voltage thereof is much higher than that of the anode 6.
The magnetic focusing array 8 focuses each electron beam to reduce the diameter of each electron beam, the optical array 9 removes diverging light, and the diameter of each electron beam in the patterned parallel electron beam array passing through the optical array 9 is reduced. The magnetic focusing array 8 and the optical wave array 9 are distributed corresponding to the digital micro-reflector array 3, and have gaps corresponding to the patterned parallel electron beam array, so that the patterned parallel electron beam array can pass through, and other electron beams are blocked.
The size of the aperture of the diaphragm in the optical array 9 is nanometer, and each laser beam is collimated and screened by the position and size of the aperture to remove divergent light, so that the diameter of each electron beam is reduced to nanometer.
Preferably, the magnetic focusing array 8 is a periodic array of electromagnetic rings, and an electric field is electrified in each electromagnetic ring to generate a magnetic field, so that the deflection of moving electrons is controlled, each electron beam is focused towards the center, and the diameter of each electron beam is reduced. Preferably, the optical wave array 9 is a metal plate with a nano-hole array, no voltage is applied, the arrangement and the spacing of the nano-holes are the same as those of the optical-electronic conversion emission array, and the function of the optical wave array is to absorb and filter stray electrons of each electron beam so as to further reduce the diameter of each electron beam.
The magnetic focusing objective lens 10 focuses and projects the received patterned parallel electron beam array onto the photoresist of the wafer on the sample stage 11. Optionally, the distance between the magnetic focusing objective lens 10 and the photoresist of the wafer on the sample stage 11 is greater than the focal length of the magnetic focusing objective lens 10. The distance between the magnetic focusing objective lens 10 and the photoresist of the wafer on the sample stage 11 can be flexibly changed according to actual needs. The magnetic focusing objective lens 10 is similar to the optical convex lens optical micro-shrinking principle, the distance between the electron beams is reduced, the diameter of each electron beam is also reduced, so that the electron beam array is reduced and focused, and the larger the reduction multiple is, the smaller the formed nanoscale photoetching pattern is.
By adopting the multi-beam-controlled multi-electron beam lithography equipment provided by the embodiment of the invention, the number of controllable electron beams can be greatly increased, the number of effective exposure points can be increased, the total exposure times can be reduced, the electron beam lithography writing time can be shortened, the efficiency and the throughput of electron beam lithography can be greatly improved, the multi-electron beam lithography equipment is expected to exceed the lithography efficiency and the resolution of the traditional lithography equipment taking light as a medium, and the multi-electron beam lithography equipment is promoted to become practical lithography equipment with strong competitiveness.
An embodiment of the present invention provides a multi-beam controlled multi-electron beam lithography method, which applies the multi-beam controlled multi-electron beam lithography apparatus shown in fig. 1, as shown in fig. 2, and includes:
Wherein each laser beam irradiates the photo-electron conversion emission array to generate an electron beam.
The patterned array of parallel electron beams is directed to emit from the cathode using the anode and the accelerating anode, step 204.
And step 205, passing through the anode and the patterned parallel electron beam array of the accelerating anode to reach the magnetic focusing array, passing through the magnetic focusing array to reach the optical array, and further reducing the diameter of each electron beam.
The magnetic focusing array is used for focusing each electron beam to reduce the diameter of each electron beam, the optical array removes divergent light, and the diameter of each electron beam in the graphical parallel electron beam array penetrating through the optical array is reduced to a nanometer level.
And step 206, passing through the graphical parallel electron beam array of the smooth array to reach a magnetic focusing objective lens, and utilizing the magnetic focusing objective lens to focus and project the graphical parallel electron beam array onto the photoresist of the wafer on the sample stage.
By adopting the multi-beam control multi-electron beam lithography method provided by the embodiment of the invention, the number of controllable electron beams can be greatly increased, the number of effective exposure points can be increased, the total exposure times can be reduced, the electron beam lithography writing time can be reduced, the efficiency and the throughput of electron beam lithography can be greatly improved, the multi-electron beam lithography equipment is expected to exceed the lithography efficiency and the resolution of the traditional lithography equipment taking light as a medium, and the multi-electron beam lithography equipment is promoted to become practical lithography equipment with strong competitiveness.
Finally, it should be pointed out that: the above examples are only for illustrating the technical solutions of the present invention, and are not limited thereto. Those of ordinary skill in the art will understand that: modifications can be made to the technical solutions described in the foregoing embodiments, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. The multi-beam-controlled multi-electron beam lithography equipment is characterized by comprising a multi-laser beam array device and a multi-electron beam array device, wherein the multi-laser beam array device comprises a laser light source, a laser parallel beam expander and a digital micro-reflector array, and the multi-electron beam array device comprises a cathode, an optical-electronic conversion emission array, an anode, an accelerating anode, a magnetic focusing array, a photonic array, a magnetic focusing objective lens and a sample platform, wherein:
the laser light source emits laser beams, the laser beams form parallel multiple laser beams through the laser parallel beam expander, the parallel multiple laser beams irradiate the digital micro-reflector array, and the digital micro-reflector array selectively reflects the beams according to a preset photoetching pattern to form a patterned parallel laser beam array;
the patterned parallel laser beam array irradiates the photo-electron conversion emission array on the cathode, each laser beam irradiates the photo-electron conversion emission array to generate an electron beam, and the patterned parallel laser beam array forms a patterned parallel electron beam array through the photo-electron conversion emission array;
the anode and the accelerating anode are in a hole structure, the anode guides the patterned parallel electron beam array to emit from the cathode, the accelerating anode accelerates electrons, and the patterned parallel electron beam array passes through the anode and the accelerating anode through the hole to reach the magnetic focusing array;
the magnetic focusing array focuses each electron beam to reduce the diameter of each electron beam, and the optical array removes divergent light to reduce the diameter of each electron beam in the graphical parallel electron beam array passing through the optical array;
and the magnetic focusing objective lens focuses and projects the received graphical parallel electron beam array onto the photoresist of the wafer on the sample stage.
2. The multi-electron beam lithography apparatus according to claim 1, wherein the digital micro-mirror array has a pixel resolution of 720p, 2K, 4K or 8K or more, each pixel corresponds to one digital micro-mirror, and the switching speed reaches the microsecond level.
3. A multi-electron beam lithography apparatus according to claim 1 or 2, wherein the digital micro-mirror array is a square array distribution or a hexagonal array distribution, and the photo-electron conversion emission array is a square array distribution or a hexagonal array distribution corresponding to the digital micro-mirror array.
4. The multi-electron beam lithography apparatus according to claim 1, wherein said photo-electron conversion emission array is a metal, alloy or semiconductor material having einstein photoelectric effect.
5. The multi-electron beam lithography apparatus of claim 1, wherein said laser light source is a short wavelength laser.
6. The multi electron beam lithography apparatus according to claim 1, wherein the aperture of the diaphragm in the optical array is of a nanometer size, and each laser beam is collimated and screened by the position and size of the aperture, and the diverging light is removed to reduce the diameter of each electron beam in the patterned parallel electron beam array passing through the optical array to a nanometer size.
7. A multi-beam controlled multi-electron beam lithography method applying the multi-beam controlled multi-electron beam lithography apparatus according to claim 1, the method comprising:
the parallel beam expander expands the laser emitted by the laser to obtain a plurality of parallel laser beams;
controlling the deflection of the micro-reflectors on each pixel in the digital micro-reflector array according to a preset photoetching pattern, and selectively reflecting the multiple laser beams irradiated on the digital micro-reflector array to form a patterned parallel laser beam array;
the imaging parallel laser beam array irradiates the light-electron conversion emission array on the cathode to generate an imaging parallel electron beam array; wherein each laser beam irradiates the photo-electron conversion emission array to generate an electron beam;
directing the patterned array of parallel electron beams to emit from the cathode using the anode and the accelerating anode;
the patterned parallel electron beam array penetrating through the anode and the accelerating anode reaches the magnetic focusing array, and penetrates through the magnetic focusing array to reach the optical array; focusing each electron beam by using the magnetic focusing array to reduce the diameter of each electron beam, and removing divergent light by using the optical array to reduce the diameter of each electron beam in the graphical parallel electron beam array passing through the optical array;
and the graphical parallel electron beam array penetrating through the optical wave array reaches the magnetic focusing objective lens, and the graphical parallel electron beam array is focused and projected onto the photoresist of the wafer on the sample stage by using the magnetic focusing objective lens.
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| CN1254943A (en) * | 1998-11-20 | 2000-05-31 | 日本电气株式会社 | Electronic beam exposure system |
| CN1602451A (en) * | 2001-11-07 | 2005-03-30 | 应用材料有限公司 | Maskless photon-electron spot-grid array printer |
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