CN112470352A - 具有集成的隧道结的垂直腔面发射激光器装置 - Google Patents

具有集成的隧道结的垂直腔面发射激光器装置 Download PDF

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Publication number
CN112470352A
CN112470352A CN201980019325.5A CN201980019325A CN112470352A CN 112470352 A CN112470352 A CN 112470352A CN 201980019325 A CN201980019325 A CN 201980019325A CN 112470352 A CN112470352 A CN 112470352A
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CN
China
Prior art keywords
bragg reflector
distributed bragg
dbr
tunnel junction
electrical contact
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Pending
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CN201980019325.5A
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English (en)
Chinese (zh)
Inventor
U·魏希曼
M·F·C·舍曼
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Tongkuai Optoelectronic Device Co ltd
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Tongkuai Optoelectronic Device Co ltd
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Publication of CN112470352A publication Critical patent/CN112470352A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN201980019325.5A 2018-03-15 2019-03-15 具有集成的隧道结的垂直腔面发射激光器装置 Pending CN112470352A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18161924.8 2018-03-15
EP18161924.8A EP3540879A1 (de) 2018-03-15 2018-03-15 Vertikalresonator-oberflächenemissionslaservorrichtung mit integriertem tunnelübergang
PCT/EP2019/056571 WO2019175399A1 (en) 2018-03-15 2019-03-15 Vertical cavity surface emitting laser device with integrated tunnel junction

Publications (1)

Publication Number Publication Date
CN112470352A true CN112470352A (zh) 2021-03-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980019325.5A Pending CN112470352A (zh) 2018-03-15 2019-03-15 具有集成的隧道结的垂直腔面发射激光器装置

Country Status (7)

Country Link
US (1) US20200403376A1 (de)
EP (2) EP3540879A1 (de)
CN (1) CN112470352A (de)
DE (1) DE102019106644A1 (de)
FR (1) FR3079080A1 (de)
GB (1) GB2573392A (de)
WO (1) WO2019175399A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113363805A (zh) * 2021-05-31 2021-09-07 厦门大学 基于导电氧化物dbr的氮化物垂直腔面发射激光器及制作方法
CN115036789A (zh) * 2022-06-06 2022-09-09 深圳技术大学 一种基于type-Ⅱ隧道结的GaAs基高速垂直腔面发射激光器
CN115882334A (zh) * 2021-09-29 2023-03-31 常州纵慧芯光半导体科技有限公司 具有小发散角的vcsel激光器、芯片及用于lidar系统的光源
GB2616124A (en) * 2021-09-29 2023-08-30 Vertilite Co Ltd VCSEL having small divergence angle, and chip and light source for LIDAR system
WO2024045607A1 (zh) * 2022-09-02 2024-03-07 常州纵慧芯光半导体科技有限公司 巨腔面发射激光器

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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CN114336270B (zh) * 2020-09-30 2023-11-24 苏州华太电子技术股份有限公司 硅基半导体激光器及其制作方法
US20220209506A1 (en) * 2020-12-30 2022-06-30 Lumentum Operations Llc Methods for forming a vertical cavity surface emitting laser device
WO2022185765A1 (ja) * 2021-03-03 2022-09-09 ソニーグループ株式会社 面発光レーザ及び電子機器
US20220352693A1 (en) * 2021-04-30 2022-11-03 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
DE102021122386A1 (de) 2021-08-30 2023-03-02 Trumpf Photonic Components Gmbh Vertikaler oberflächenemittierender Hohlraumlaser (VCSEL), Lasersensor und Verfahren zur Herstellung eines VCSEL
CN115882335B (zh) * 2021-09-29 2023-12-12 常州纵慧芯光半导体科技有限公司 具有小发散角的vcsel激光器、芯片及用于lidar系统的光源
DE102022105668A1 (de) 2022-03-10 2023-09-14 Ams-Osram International Gmbh Laseranordnung, optoelektronisches system und verfahren zur herstellung einer laseranordnung

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US20010050934A1 (en) * 2000-05-31 2001-12-13 Choquette Kent D. Long wavelength vertical cavity surface emitting laser
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
CN1613170A (zh) * 2001-12-28 2005-05-04 菲尼萨公司 用于垂直腔表面发射激光器的非对称分布布拉格反射器
US20070145388A1 (en) * 2005-12-05 2007-06-28 Osram Opto Semiconductors Gmbh Semiconductor component
US20130188659A1 (en) * 2012-01-24 2013-07-25 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor

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DE19723677A1 (de) 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
US6490311B1 (en) * 1998-04-14 2002-12-03 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
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JP2010114214A (ja) * 2008-11-05 2010-05-20 Fuji Xerox Co Ltd 面発光型半導体レーザ素子、面発光型半導体レーザ素子の製造方法、および光送信装置
BR112017005893A2 (pt) 2014-09-25 2018-02-06 Koninklijke Philips Nv laser emissor de superfície de cavidade vertical, disposição de laser, e, método para fabricar um laser de emissão de superfície de cavidade vertical
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EP3281262B1 (de) * 2015-04-10 2019-06-26 Koninklijke Philips N.V. Sichere laservorrichtung für optische messanwendungen
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US20010050934A1 (en) * 2000-05-31 2001-12-13 Choquette Kent D. Long wavelength vertical cavity surface emitting laser
CN1613170A (zh) * 2001-12-28 2005-05-04 菲尼萨公司 用于垂直腔表面发射激光器的非对称分布布拉格反射器
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
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US20130188659A1 (en) * 2012-01-24 2013-07-25 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113363805A (zh) * 2021-05-31 2021-09-07 厦门大学 基于导电氧化物dbr的氮化物垂直腔面发射激光器及制作方法
CN115882334A (zh) * 2021-09-29 2023-03-31 常州纵慧芯光半导体科技有限公司 具有小发散角的vcsel激光器、芯片及用于lidar系统的光源
WO2023050739A1 (zh) * 2021-09-29 2023-04-06 常州纵慧芯光半导体科技有限公司 具有小发散角的vcsel激光器、芯片及用于lidar系统的光源
GB2616124A (en) * 2021-09-29 2023-08-30 Vertilite Co Ltd VCSEL having small divergence angle, and chip and light source for LIDAR system
CN115882334B (zh) * 2021-09-29 2023-12-12 常州纵慧芯光半导体科技有限公司 具有小发散角的vcsel激光器、芯片及用于lidar系统的光源
CN115036789A (zh) * 2022-06-06 2022-09-09 深圳技术大学 一种基于type-Ⅱ隧道结的GaAs基高速垂直腔面发射激光器
CN115036789B (zh) * 2022-06-06 2023-12-19 深圳技术大学 一种基于type-Ⅱ隧道结的GaAs基高速垂直腔面发射激光器
WO2024045607A1 (zh) * 2022-09-02 2024-03-07 常州纵慧芯光半导体科技有限公司 巨腔面发射激光器

Also Published As

Publication number Publication date
EP3766150B1 (de) 2024-03-06
FR3079080A1 (fr) 2019-09-20
DE102019106644A1 (de) 2019-09-19
GB2573392A (en) 2019-11-06
EP3766150A1 (de) 2021-01-20
EP3540879A1 (de) 2019-09-18
US20200403376A1 (en) 2020-12-24
GB201903496D0 (en) 2019-05-01
WO2019175399A1 (en) 2019-09-19

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