Disclosure of Invention
The invention aims to provide a method for manufacturing a copper-clad lining plate. The copper-clad lining board manufacturing method optimizes the sequence of the process steps and optimizes the process condition parameters of the steps, so that the obtained copper-clad lining board has excellent performance indexes and good comprehensive use performance; the solution concentration selectivity is increased; the production efficiency of the copper-clad lining plate can be greatly improved.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a method for manufacturing a copper-clad lining plate comprises the following steps:
s1, cleaning the ceramic chip and the copper sheet:
cleaning the surface of the ceramic chip, and then drying at the drying temperature of 80 +/-5 ℃; cleaning the surface of the copper sheet, and then drying at the drying temperature of 80 +/-5 ℃;
s2, printing the paste:
respectively printing slurry layers on two surfaces of the ceramic chip processed in the step S1, wherein the printing mode is silk-screen printing, and then drying at the drying temperature of 100 +/-10 ℃;
s3, sintering:
covering a copper sheet on each of the two slurry layer surfaces of the ceramic chip processed in the step S2, and then sintering in a sintering furnace;
s4, copper etching:
then, etching the copper by using an etching solution to completely etch the part of the copper sheet to be etched; then, cleaning the etching solution on the surface by using pure water, wherein the temperature of the pure water is room temperature during cleaning; then drying at the drying temperature of 85 +/-5 ℃;
s5, cutting:
then cutting the fiber into the required shape and size by using a fiber laser cutting machine;
s6, cleaning:
then, adopting NaOH solution to carry out surface cleaning; then washing away the NaOH solution on the surface by using pure water, wherein the washing time is 30-90 s, and the temperature of the pure water is room temperature during washing; then drying at the drying temperature of 80 ℃;
s7, etching the slurry:
then, carrying out copper etching by adopting a slurry etching solution, and completely etching the part of the slurry layer to be etched until the surface of the ceramic chip is seen; then, cleaning the slurry etching solution on the surface by using pure water, wherein the temperature of the pure water is 75 +/-5 ℃ during cleaning; then drying at the drying temperature of 85 +/-5 ℃;
the copper-clad liner plate manufacturing method optimizes the sequence of process steps and preferably selects process condition parameters of each step (the control of the process condition parameters is the key for obtaining the copper-clad liner plate with good comprehensive performance, and the good comprehensive performance of the obtained copper-clad liner plate can be ensured only if the process condition parameters are controlled in a proper range), so that the bending strength of the obtained copper-clad liner plate is more than or equal to 450 MPa; the temperature impact times are more than 100; the insulation withstand voltage is more than 7 kV; the comprehensive performance index is excellent.
The copper-clad lining board manufacturing method optimizes the sequence of the process steps and optimizes the process condition parameters of the steps, so that the obtained copper-clad lining board has excellent performance indexes and good comprehensive use performance; the solution concentration selectivity is increased; the production efficiency of the copper-clad lining plate can be greatly improved.
Preferably, in step S1, the ceramic tile is an aluminum nitride (AlN) tile with a thickness of 1 mm; the cleaning of the surface of the ceramic chip is to soak the ceramic chip in 9-11.5 wt% of dilute nitric acid for 100-140 min, then carry out three-section countercurrent cleaning by using pure water, wherein the cleaning time of each section is 30s, and the temperature of the pure water is room temperature during cleaning.
Preferably, in step S1, the copper sheet is an oxygen-free copper sheet with a thickness of 0.3 mm; the copper sheet surface is cleaned by soaking in 4.5-5.5 wt% of dilute sulfuric acid for 2-4 min, and then three-section countercurrent cleaning is carried out by pure water, wherein the total time of the three-section countercurrent cleaning is more than 60s, and the temperature of the pure water is room temperature during cleaning.
Preferably, in step S2, the slurry used in the slurry layer includes the following raw materials in parts by weight: 55-67 parts of Cu, 30-37 parts of Ag and 15-18 parts of Ti;
the screen printing plate adopted by the screen printing is a stainless steel screen printing plate;
the temperature is controlled to be 20 +/-10 ℃ during screen printing, and the humidity is controlled to be less than or equal to 60% RH;
after drying, the thickness of the slurry layers on the two sides of the ceramic chip is 26 +/-6 mu m.
Preferably, in step S3, the sintering temperature is controlled to 880-900 ℃, the vacuum degree in the furnace is controlled to ≦ 5 × 10-2Pa, and the sintering time is 35-45 min.
Preferably, in step S4, the etching solution includes the following raw materials in parts by weight: 7-8 parts of hydrochloric acid and 3-5 parts of sulfuric acid;
the etching temperature is controlled to be 35 +/-5 ℃, and the etching time is 30 +/-10 min.
Preferably, in step S5, when the fiber laser cutting machine is used for cutting, the cutting depth is controlled to be 30-50%, the laser mode is QCW, the laser power is 150W, the scribing speed is controlled to be 80mm/S, the laser frequency is 12KHz, the duty ratio is 10%, and the laser energy is 80%.
Preferably, in step S6, the concentration of the NaOH solution is 18 to 22 wt%, the cleaning temperature is normal temperature, and the cleaning time is 2 to 3 min;
preferably, in step S7, the slurry etching solution includes the following raw materials in parts by weight: 15-20 parts of hydrogen peroxide, 4.3-5.7 parts of etching additive and 25-30 parts of ammonia water;
the content of TC-ET-A in the etching additive is 20mL/L, TC-ET-B, the content of TC-ET-B in the etching additive is 25mL/L, TC-ET-C, the content of TC-ET-B in the etching additive is 5mL/L, and the balance is deionized water;
etching temperature is controlled to be 20 +/-5 ℃, etching time is controlled to be: 40 plus or minus 10 min.
Preferably, the content of the hydrogen peroxide in the etching solution A (TC-ET-A) is 5V/V% -40V/V%;
the content of ammonia water in the etching solution A (TC-ET-A) is 0.5V/V% -5V/V%;
the etching solution A (TC-ET-A) has a structure containing 0.1-1 wt% of carboxyl and salt (carboxylate) thereof;
the content of the surfactant sulfate in the etching solution A (TC-ET-A) is 0.01-0.05 wt%;
the rest of the etching solution A (TC-ET-A) is deionized water.
Preferably, the etching solution B (TC-ET-B) contains organic amine with the content of 3 to 8 weight percent;
the content of alcohols in the etching solution B (TC-ET-B) is 2 wtV-5 wt%;
the content of sulfuric acid in the etching solution B (TC-ET-B) is 2V/V% -8V/V%;
the hydrogen peroxide content in the etching solution B (TC-ET-B) is 3V/V% -6V/V%;
the rest of the etching solution B (TC-ET-B) is deionized water.
Preferably, the structure of the etching solution C (TC-ET-C) contains 14W/V% -20W/V% of carboxyl and salts (carboxylate) thereof, 3V/V% -5V/V of ammonia water, 5W/V% -8W/V% of alcohol, 6W/V% -10W/V% of organic amine and the balance of deionized water.
The invention also provides a copper-clad liner plate manufactured by the manufacturing method of the copper-clad liner plate.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the copper-clad liner plate manufacturing method optimizes the sequence of process steps and preferably selects process condition parameters of each step (the control of the process condition parameters is the key for obtaining the copper-clad liner plate with good comprehensive performance, and the good comprehensive performance of the obtained copper-clad liner plate can be ensured only if the process condition parameters are controlled in a proper range), so that the bending strength of the obtained copper-clad liner plate is more than or equal to 450 MPa; the temperature impact times are more than 100; the insulation withstand voltage is more than 7 kV; the comprehensive performance index is excellent.
The copper-clad lining plate manufacturing method of the invention has no porcelain concern, so that acidic and alkaline solutions can be selected; the solution concentration selectivity is increased; the production efficiency of the copper-clad lining plate can be greatly improved.
The copper-clad lining plate prepared by the copper-clad lining plate manufacturing method can improve a process window, the selectivity of the solution type for subsequent treatment is increased, the reaction between a NaOH solution and an AlN ceramic chip is strong, and the old technical liquid medicine is directly contacted with the surface of the ceramic chip, so that only an acid washing solution can be selected;
the solution concentration selectivity of the copper-clad liner plate manufacturing method is increased, and the copper-clad liner plate manufacturing method effectively protects the surface of the ceramic chip, so that the high-concentration solution is selected for treatment, and the strength of the ceramic chip is not obviously influenced;
the manufacturing method of the copper-clad lining plate can greatly improve the production efficiency, improve the process window, select high-concentration liquid medicine and obviously reduce the cleaning treatment time, thereby improving the production efficiency of products.
Detailed Description
In order that those skilled in the art will better understand the technical solutions of the present invention, the following description of the preferred embodiments of the present invention is provided in connection with specific examples, which should not be construed as limiting the present patent.
The test methods or test methods described in the following examples are conventional methods unless otherwise specified; the reagents and materials, unless otherwise indicated, are conventionally obtained commercially or prepared by conventional methods.
Example 1:
a method for manufacturing a copper-clad lining plate comprises the following steps:
s1, cleaning the ceramic chip and the copper sheet:
cleaning the surface of the ceramic chip, and then drying at the drying temperature of 80 +/-5 ℃; cleaning the surface of the copper sheet, and then drying at the drying temperature of 80 +/-5 ℃;
s2, printing the paste:
respectively printing slurry layers on two surfaces of the ceramic chip processed in the step S1, wherein the printing mode is silk-screen printing, and then drying at the drying temperature of 100 +/-10 ℃;
s3, sintering:
covering a copper sheet on each of the two slurry layer surfaces of the ceramic chip processed in the step S2, and then sintering in a sintering furnace;
s4, copper etching:
then, etching the copper by using an etching solution to completely etch the part of the copper sheet to be etched; then, cleaning the etching solution on the surface by using pure water, wherein the temperature of the pure water is room temperature during cleaning; then drying at the drying temperature of 85 +/-5 ℃;
s5, cutting:
then cutting the fiber into the required shape and size by using a fiber laser cutting machine;
s6, cleaning:
then, adopting NaOH solution to carry out surface cleaning; then washing away the NaOH solution on the surface by using pure water, wherein the washing time is 30-90 s, and the temperature of the pure water is room temperature during washing; then drying at the drying temperature of 80 ℃;
s7, etching the slurry:
then, carrying out copper etching by adopting a slurry etching solution, and completely etching the part of the slurry layer to be etched until the surface of the ceramic chip is seen; then, cleaning the slurry etching solution on the surface by using pure water, wherein the temperature of the pure water is 75 +/-5 ℃ during cleaning; then drying at the drying temperature of 85 +/-5 ℃;
preferably, in step S1, the ceramic tile is an aluminum nitride (AlN) tile with a thickness of 1 mm; the cleaning of the surface of the ceramic chip is to soak the ceramic chip in 9-11.5 wt% of dilute nitric acid for 100-140 min, then carry out three-section countercurrent cleaning by using pure water, wherein the cleaning time of each section is 30s, and the temperature of the pure water is room temperature during cleaning.
Preferably, in step S1, the copper sheet is an oxygen-free copper sheet with a thickness of 0.3 mm; the copper sheet surface is cleaned by soaking in 4.5-5.5 wt% of dilute sulfuric acid for 2-4 min, and then three-section countercurrent cleaning is carried out by pure water, wherein the total time of the three-section countercurrent cleaning is more than 60s, and the temperature of the pure water is room temperature during cleaning.
Preferably, in step S2, the slurry used in the slurry layer includes the following raw materials in parts by weight: 55-67 parts of Cu, 30-37 parts of Ag and 15-18 parts of Ti;
the screen printing plate adopted by the screen printing is a stainless steel screen printing plate;
the temperature is controlled to be 20 +/-10 ℃ during screen printing, and the humidity is controlled to be less than or equal to 60% RH;
after drying, the thickness of the slurry layers on the two sides of the ceramic chip is 26 +/-6 mu m.
Preferably, in step S3, the sintering temperature is controlled to 880-900 ℃, the vacuum degree in the furnace is controlled to ≦ 5 × 10-2Pa, and the sintering time is 35-45 min.
Preferably, in step S4, the etching solution includes the following raw materials in parts by weight: 7-8 parts of hydrochloric acid and 3-5 parts of sulfuric acid;
the etching temperature is controlled to be 35 +/-5 ℃, and the etching time is 30 +/-10 min.
Preferably, in step S5, when the fiber laser cutting machine is used for cutting, the cutting depth is controlled to be 30-50%, the laser mode is QCW, the laser power is 150W, the scribing speed is controlled to be 80mm/S, the laser frequency is 12KHz, the duty ratio is 10%, and the laser energy is 80%.
Preferably, in step S6, the concentration of the NaOH solution is 18 to 22 wt%, the cleaning temperature is normal temperature, and the cleaning time is 2 to 3 min;
preferably, in step S7, the slurry etching solution includes the following raw materials in parts by weight: 15-20 parts of hydrogen peroxide, 4.3-5.7 parts of etching additive and 25-30 parts of ammonia water;
the content of TC-ET-A in the etching additive is 20mL/L, TC-ET-B, the content of TC-ET-B in the etching additive is 25mL/L, TC-ET-C, the content of TC-ET-B in the etching additive is 5mL/L, and the balance is deionized water;
the content of hydrogen peroxide in the etching solution A (TC-ET-A) is 5V/V% -40V/V%;
the content of ammonia water in the etching solution A (TC-ET-A) is 0.5V/V% -5V/V%;
the etching solution A (TC-ET-A) has a structure containing 0.1-1 wt% of carboxyl and salt (carboxylate) thereof;
the content of the surfactant sulfate in the etching solution A (TC-ET-A) is 0.01-0.05 wt%;
the rest of the etching solution A (TC-ET-A) is deionized water.
The etching solution B (TC-ET-B) contains organic amine with the content of 3 to 8 weight percent;
the content of alcohols in the etching solution B (TC-ET-B) is 2 wtV-5 wt%;
the content of sulfuric acid in the etching solution B (TC-ET-B) is 2V/V% -8V/V%;
the hydrogen peroxide content in the etching solution B (TC-ET-B) is 3V/V% -6V/V%;
the rest of the etching solution B (TC-ET-B) is deionized water.
The etching solution C (TC-ET-C) structurally contains 14W/V-20W/V of carboxyl and salts (carboxylate) thereof, 3V/V-5V/V of ammonia water, 5W/V-8W/V of alcohol, 6W/V-10W/V of organic amine and the balance of deionized water.
Etching temperature is controlled to be 20 +/-5 ℃, etching time is controlled to be: 40 plus or minus 10 min.
The invention also provides a copper-clad liner plate manufactured by the manufacturing method of the copper-clad liner plate.
Example 2:
a method for manufacturing a copper-clad lining plate comprises the following steps:
s1, cleaning the ceramic chip and the copper sheet:
cleaning the surface of the ceramic chip, and then drying at the drying temperature of 75 ℃; cleaning the surface of a copper sheet, and then drying at the drying temperature of 75 ℃;
s2, printing the paste:
respectively printing slurry layers on two surfaces of the ceramic chip processed in the step S1, wherein the printing mode is silk-screen printing, and then drying at the drying temperature of 90 ℃;
s3, sintering:
covering a copper sheet on each of the two slurry layer surfaces of the ceramic chip processed in the step S2, and then sintering in a sintering furnace;
s4, copper etching:
then, etching the copper by using an etching solution to completely etch the part of the copper sheet to be etched; then, cleaning the etching solution on the surface by using pure water, wherein the temperature of the pure water is room temperature during cleaning; then drying at the drying temperature of 80 ℃;
s5, cutting:
then cutting the fiber into the required shape and size by using a fiber laser cutting machine;
s6, cleaning:
then, adopting NaOH solution to carry out surface cleaning; then, washing away the NaOH solution on the surface by using pure water, wherein the washing time is 30s, and the temperature of the pure water is room temperature during washing; then drying at the drying temperature of 80 ℃;
s7, etching the slurry:
then, carrying out copper etching by adopting a slurry etching solution, and completely etching the part of the slurry layer to be etched until the surface of the ceramic chip is seen; then, cleaning the slurry etching solution on the surface by using pure water, wherein the temperature of the pure water is 70 ℃ during cleaning; then drying at the drying temperature of 80 ℃;
in this embodiment, in step S1, the specification of the ceramic tile is an aluminum nitride (AlN) tile with a thickness of 1 mm; the surface of the ceramic chip is cleaned by soaking the ceramic chip in 9 wt% dilute nitric acid for 140min, and then three-section countercurrent cleaning is carried out by adopting pure water, wherein the cleaning time of each section is 30s, and the temperature of the pure water is room temperature during cleaning.
In this embodiment, in step S1, the copper sheet is an oxygen-free copper sheet with a thickness of 0.3 mm; the copper sheet surface is cleaned by soaking in 4.5 wt% dilute sulfuric acid for 4min, and then three-stage countercurrent cleaning is carried out by pure water, wherein the total time of the three-stage countercurrent cleaning is more than 60s, and the temperature of the pure water is room temperature during cleaning.
In this embodiment, in step S2, the slurry used in the slurry layer includes the following raw materials in parts by weight: 55 parts of Cu, 30 parts of Ag and 15 parts of Ti;
the screen printing plate adopted by the screen printing is a stainless steel screen printing plate;
the temperature is controlled to be 10 ℃ during silk-screen printing, and the humidity is controlled to be less than or equal to 60% RH;
after drying, the thickness of the slurry layers on the two sides of the ceramic piece is 20 μm.
In this example, in step S3, the sintering temperature was controlled to 880 ℃, the degree of vacuum in the furnace was controlled to ≦ 5 × 10-2Pa, and the sintering time was 45 min.
In this embodiment, in step S4, the etching solution includes the following raw materials in parts by weight: 7 parts of hydrochloric acid and 3 parts of sulfuric acid;
the etching temperature was controlled at 30 ℃ and the etching time was 40 min.
In this embodiment, in step S5, when the fiber laser cutting machine is used for cutting, the cutting depth is controlled to be 30%, the laser mode is QCW, the laser power is 150W, the scribing speed is controlled to be 80mm/S, the laser frequency is 12KHz, the duty ratio is 10%, and the laser energy is 80%.
In this embodiment, in step S6, the concentration of the NaOH solution is 18 wt%, the cleaning temperature is normal temperature, and the cleaning time is 3 min;
in this embodiment, in step S7, the slurry etching solution includes the following raw materials in parts by weight: 15 parts of hydrogen peroxide, 4.3 parts of etching additive and 25 parts of ammonia water;
the content of TC-ET-A in the etching additive is 20mL/L, TC-ET-B, the content of TC-ET-B in the etching additive is 25mL/L, TC-ET-C, the content of TC-ET-B in the etching additive is 5mL/L, and the balance is deionized water;
the content of hydrogen peroxide in the etching solution A (TC-ET-A) is 13.5V/V%;
the content of ammonia water in the etching solution A (TC-ET-A) is 1.65V/V%;
the etching solution A (TC-ET-A) structurally contains carboxyl and salt (carboxylate) thereof with the content of 0.35 wt%;
the content of the surfactant sulfate in the etching solution A (TC-ET-A) is 0.02 wt%;
the rest of the etching solution A (TC-ET-A) is deionized water.
The etching solution B (TC-ET-B) contains organic amine with the content of 4.5 wt%;
the content of alcohols in the etching solution B (TC-ET-B) is 2.8 wt%;
the content of sulfuric acid in the etching solution B (TC-ET-B) is 4V/V%;
the hydrogen peroxide content in the etching solution B (TC-ET-B) is 3.5V/V%;
the rest of the etching solution B (TC-ET-B) is deionized water.
The etching solution C (TC-ET-C) structurally contains 16W/V% of carboxyl and salts (carboxylates) thereof, 3.5V/V of ammonia water, 5.8W/V% of alcohol, 7W/V% of organic amine and the balance of deionized water.
Etching temperature is controlled to be 15 ℃, etching time: and (5) 50 min.
In the embodiment, the copper-clad liner plate is manufactured by the manufacturing method of the copper-clad liner plate.
Example 3:
a method for manufacturing a copper-clad lining plate comprises the following steps:
s1, cleaning the ceramic chip and the copper sheet:
cleaning the surface of the ceramic chip, and then drying at the drying temperature of 85 ℃; cleaning the surface of a copper sheet, and then drying at the drying temperature of 85 ℃;
s2, printing the paste:
respectively printing slurry layers on two surfaces of the ceramic chip processed in the step S1, wherein the printing mode is silk-screen printing, and then drying at the drying temperature of 110 ℃;
s3, sintering:
covering a copper sheet on each of the two slurry layer surfaces of the ceramic chip processed in the step S2, and then sintering in a sintering furnace;
s4, copper etching:
then, etching the copper by using an etching solution to completely etch the part of the copper sheet to be etched; then, cleaning the etching solution on the surface by using pure water, wherein the temperature of the pure water is room temperature during cleaning; then drying at the drying temperature of 90 ℃;
s5, cutting:
then cutting the fiber into the required shape and size by using a fiber laser cutting machine;
s6, cleaning:
then, adopting NaOH solution to carry out surface cleaning; then washing away the NaOH solution on the surface by using pure water, wherein the washing time is 90s, and the temperature of the pure water is room temperature during washing; then drying at the drying temperature of 80 ℃;
s7, etching the slurry:
then, carrying out copper etching by adopting a slurry etching solution, and completely etching the part of the slurry layer to be etched until the surface of the ceramic chip is seen; then, cleaning the slurry etching solution on the surface by using pure water, wherein the temperature of the pure water is 90 ℃ during cleaning; then drying at the drying temperature of 90 ℃;
in this embodiment, in step S1, the specification of the ceramic tile is an aluminum nitride (AlN) tile with a thickness of 1 mm; the surface of the ceramic chip is cleaned by soaking the ceramic chip in 11.5 wt% dilute nitric acid for 100min, and then three-section countercurrent cleaning is carried out by adopting pure water, wherein the cleaning time of each section is 30s, and the temperature of the pure water is room temperature during cleaning.
In this embodiment, in step S1, the copper sheet is an oxygen-free copper sheet with a thickness of 0.3 mm; the copper sheet surface is cleaned by soaking in 5.5 wt% dilute sulfuric acid for 2min, and then three-stage countercurrent cleaning is carried out by pure water, wherein the total time of the three-stage countercurrent cleaning is more than 60s, and the temperature of the pure water is room temperature during cleaning.
In this embodiment, in step S2, the slurry used in the slurry layer includes the following raw materials in parts by weight: 67 parts of Cu, 37 parts of Ag and 18 parts of Ti;
the screen printing plate adopted by the screen printing is a stainless steel screen printing plate;
the temperature is controlled to be 30 ℃ during screen printing, and the humidity is controlled to be less than or equal to 60% RH;
after drying, the thickness of the slurry layers on the two sides of the ceramic chip is 32 μm.
In this example, in step S3, the sintering temperature was controlled to 900 ℃, the degree of vacuum in the furnace was controlled to ≦ 5 × 10-2Pa, and the sintering time was 35 min.
In this embodiment, in step S4, the etching solution includes the following raw materials in parts by weight: 8 parts of hydrochloric acid and 5 parts of sulfuric acid;
the etching temperature was controlled at 40 ℃ and the etching time was 20 min.
In this embodiment, in step S5, when the fiber laser cutting machine is used for cutting, the cutting depth is controlled to be 50%, the laser mode is QCW, the laser power is 150W, the scribing speed is controlled to be 80mm/S, the laser frequency is 12KHz, the duty ratio is 10%, and the laser energy is 80%.
In this embodiment, in step S6, the concentration of the NaOH solution is 22 wt%, the cleaning temperature is normal temperature, and the cleaning time is 2 min;
in this embodiment, in step S7, the slurry etching solution includes the following raw materials in parts by weight: 15-20 parts of hydrogen peroxide, 4.3-5.7 parts of etching additive and 25-30 parts of ammonia water;
the content of TC-ET-A in the etching additive is 20mL/L, TC-ET-B, the content of TC-ET-B in the etching additive is 25mL/L, TC-ET-C, the content of TC-ET-B in the etching additive is 5mL/L, and the balance is deionized water;
the content of hydrogen peroxide in the etching solution A (TC-ET-A) is 36.5V/V%;
the content of ammonia water in the etching solution A (TC-ET-A) is 4.4V/V%;
the etching solution A (TC-ET-A) structurally contains carboxyl and salt (carboxylate) thereof with the content of 0.77 wt%;
the content of the surfactant sulfate in the etching solution A (TC-ET-A) is 0.045 wt%;
the rest of the etching solution A (TC-ET-A) is deionized water.
The etching solution B (TC-ET-B) contains organic amine with the content of 6.8 wt%;
the content of alcohols in the etching solution B (TC-ET-B) is 4 wt%;
the content of sulfuric acid in the etching solution B (TC-ET-B) is 7V/V%;
the hydrogen peroxide content in the etching solution B (TC-ET-B) is 5.5V/V%;
the rest of the etching solution B (TC-ET-B) is deionized water.
The etching solution C (TC-ET-C) structurally contains 18W/V% of carboxyl and salts (carboxylate) thereof, 4.5V/V of ammonia water, 7.2W/V% of alcohol, 9W/V% of organic amine and the balance of deionized water.
In the embodiment, the copper-clad liner plate is manufactured by the manufacturing method of the copper-clad liner plate.
Example 4:
a method for manufacturing a copper-clad lining plate comprises the following steps:
s1, cleaning the ceramic chip and the copper sheet:
cleaning the surface of the ceramic chip, and then drying at the drying temperature of 80 ℃; cleaning the surface of a copper sheet, and then drying at the drying temperature of 80 ℃;
s2, printing the paste:
respectively printing slurry layers on two surfaces of the ceramic chip processed in the step S1, wherein the printing mode is silk-screen printing, and then drying at the drying temperature of 100 ℃;
s3, sintering:
covering a copper sheet on each of the two slurry layer surfaces of the ceramic chip processed in the step S2, and then sintering in a sintering furnace;
s4, copper etching:
then, etching the copper by using an etching solution to completely etch the part of the copper sheet to be etched; then, cleaning the etching solution on the surface by using pure water, wherein the temperature of the pure water is room temperature during cleaning; then drying at the drying temperature of 85 ℃;
s5, cutting:
then cutting the fiber into the required shape and size by using a fiber laser cutting machine;
s6, cleaning:
then, adopting NaOH solution to carry out surface cleaning; then washing away the NaOH solution on the surface by using pure water, wherein the washing time is 30-90 s, and the temperature of the pure water is room temperature during washing; then drying at the drying temperature of 80 ℃;
s7, etching the slurry:
then, carrying out copper etching by adopting a slurry etching solution, and completely etching the part of the slurry layer to be etched until the surface of the ceramic chip is seen; then, cleaning the slurry etching solution on the surface by using pure water, wherein the temperature of the pure water is 75 ℃ during cleaning; then drying at the drying temperature of 85 ℃;
in this embodiment, in step S1, the specification of the ceramic tile is an aluminum nitride (AlN) tile with a thickness of 1 mm; the surface of the ceramic chip is cleaned by soaking the ceramic chip in 10.2 wt% dilute nitric acid for 120min, and then three-section countercurrent cleaning is carried out by adopting pure water, wherein the cleaning time of each section is 30s, and the temperature of the pure water is room temperature during cleaning.
In this embodiment, in step S1, the copper sheet is an oxygen-free copper sheet with a thickness of 0.3 mm; the copper sheet surface is cleaned by soaking in 5 wt% dilute sulfuric acid for 3min, and then three-stage countercurrent cleaning is carried out by pure water, wherein the total time of the three-stage countercurrent cleaning is more than 60s, and the temperature of the pure water is room temperature during cleaning.
In this embodiment, in step S2, the slurry used in the slurry layer includes the following raw materials in parts by weight: 61 parts of Cu, 33.5 parts of Ag and 16.5 parts of Ti;
the screen printing plate adopted by the screen printing is a stainless steel screen printing plate;
the temperature is controlled to be 20 ℃ and the humidity is controlled to be less than or equal to 60 percent RH during the silk-screen printing;
after drying, the thickness of the slurry layers on the two sides of the ceramic chip is 26 μm.
In this example, in step S3, the sintering temperature was controlled to 890 ℃, the degree of vacuum in the furnace was controlled to ≦ 5X 10-2Pa, and the sintering time was 40 min.
In this embodiment, in step S4, the etching solution includes the following raw materials in parts by weight: 7.5 parts of hydrochloric acid and 4 parts of sulfuric acid;
the etching temperature was controlled at 35 ℃ and the etching time was 30 min.
In this embodiment, in step S5, when the fiber laser cutting machine is used for cutting, the cutting depth is controlled to be 40%, the laser mode is QCW, the laser power is 150W, the scribing speed is controlled to be 80mm/S, the laser frequency is 12KHz, the duty ratio is 10%, and the laser energy is 80%.
In this embodiment, in step S6, the concentration of the NaOH solution is 20 wt%, the cleaning temperature is normal temperature, and the cleaning time is 2.5 min;
in this embodiment, in step S7, the slurry etching solution includes the following raw materials in parts by weight: 15-20 parts of hydrogen peroxide, 4.3-5.7 parts of etching additive and 25-30 parts of ammonia water;
the content of TC-ET-A in the etching additive is 20mL/L, TC-ET-B, the content of TC-ET-B in the etching additive is 25mL/L, TC-ET-C, the content of TC-ET-B in the etching additive is 5mL/L, and the balance is deionized water;
the content of hydrogen peroxide in the etching solution A (TC-ET-A) is 23V/V%;
the content of ammonia water in the etching solution A (TC-ET-A) is 3V/V%;
the etching solution A (TC-ET-A) structurally contains carboxyl and salt (carboxylate) thereof with the content of 0.6 wt%;
the content of the surfactant sulfate in the etching solution A (TC-ET-A) is 0.03 wt%;
the rest of the etching solution A (TC-ET-A) is deionized water.
The etching solution B (TC-ET-B) contains organic amine with the content of 5.5 wt%;
the content of alcohols in the etching solution B (TC-ET-B) is 3.5 wt%;
the content of sulfuric acid in the etching solution B (TC-ET-B) is 5V/V%;
the content of hydrogen peroxide in the etching solution B (TC-ET-B) is 4.5V/V%;
the rest of the etching solution B (TC-ET-B) is deionized water.
The etching solution C (TC-ET-C) structurally contains 17W/V% of carboxyl and salts (carboxylate) thereof, 4V/V of ammonia water, 6.5W/V% of alcohol, 8W/V% of organic amine and the balance of deionized water.
In the embodiment, the copper-clad liner plate is manufactured by the manufacturing method of the copper-clad liner plate.
The following performance tests were performed on the copper-clad laminates manufactured by the copper-clad laminate manufacturing methods described in embodiments 2 to 4 of the present invention, and the test results are shown in table 1:
in table 1, after the slurry etching, that is, in the method for manufacturing a copper-clad backing plate according to embodiment 4 of the present invention, the sequence of steps S5, S6, and S7 is changed to S7, S5, and S6, the other steps are completely the same as those in embodiment 4 of the present invention, the manufactured copper-clad backing plate is processed by using different types of solutions, and the strength of the processed ceramic chip is compared with that of the ceramic chip before processing;
before etching, the copper-clad lining board prepared by the copper-clad lining board manufacturing method in embodiment 4 of the invention is processed by different solution types, and the strength of the processed ceramic chip is compared with that of the ceramic chip before processing.
TABLE 1
Cutting sequence
|
Type of solution
|
Time of treatment
|
Effect of treatment
|
Ceramic tile strength status
|
After etching of the slurry
|
5%HSO4
|
30min
|
Residual Al
|
1
|
After etching of the slurry
|
5%NaoH
|
30min
|
Has no residue
|
2
|
After etching of the slurry
|
20%NaoH
|
5min
|
Has no residue
|
3
|
Before etching of slurry
|
5%NaoH
|
30min
|
Has no residue
|
0
|
Before etching of slurry
|
10%NaoH
|
10min
|
Has no residue
|
0
|
Before etching of slurry
|
20%NaoH
|
5min
|
Has no residue
|
0 |
Note: the ceramic chip strength state shows that ' 0 ' has no influence, the ceramic chip strength is reduced by less than 1 percent, 1 ' is slightly reduced, the ceramic chip strength is reduced by less than 1-5 percent, 2 ' is reduced, 3 ' is seriously reduced, and the ceramic chip strength is reduced by more than 5 percent.
In addition, tests show that the copper-clad backing plates prepared by the copper-clad backing plate manufacturing methods in the embodiments 2 to 3 of the invention are treated by different solution types, and the strength of the ceramic chip after treatment is compared with that before treatment, and the method has no influence and is the same as the comparative example 4.
The bending strength of the copper-clad liner plate prepared by the copper-clad liner plate manufacturing method in the embodiments 2 to 4 is tested to be not less than 450 MPa; the temperature impact times are more than 100; the insulation withstand voltage is more than 7 kV; the comprehensive performance index is excellent.
The above is only a preferred embodiment of the present invention, and it should be noted that the above preferred embodiment should not be considered as limiting the present invention, and the protection scope of the present invention should be subject to the scope defined by the claims. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the spirit and scope of the invention, and these modifications and adaptations should be considered within the scope of the invention.