CN112468118A - Circuit assembly, signal detection method and semiconductor process equipment - Google Patents
Circuit assembly, signal detection method and semiconductor process equipment Download PDFInfo
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Abstract
The invention provides a circuit assembly for detecting a pulse modulation signal on a lower electrode in semiconductor process equipment, which comprises a radio frequency signal detection circuit, a detection result processing circuit group and a detection result processing circuit group, wherein the radio frequency signal detection circuit is used for converting the pulse modulation signal into a pulse signal before modulation and detecting the pulse signal to obtain a detection pulse signal, and the detection result processing circuit group can adjust the signal amplitude of the detection pulse signal in each period to be a representation amplitude corresponding to the highest amplitude of the detection pulse signal in the corresponding period. In the invention, the detection result processing circuit group can convert the detection pulse signal into a direct current signal corresponding to the peak value of the pulse signal in real time, so that the reaction parameters in the process chamber can be detected accurately in real time. The invention also provides a signal detection method and semiconductor process equipment.
Description
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to a circuit assembly, a signal detection method based on the circuit assembly and semiconductor process equipment comprising the circuit assembly.
Background
In the semiconductor field, a lower electrode is often arranged in a process chamber, a bias voltage on the lower electrode is changed in a mode of inputting a radio frequency signal to the lower electrode so as to change process parameters, the accuracy of the bias voltage of the lower electrode is closely related to the process effect of a semiconductor process, and how to accurately and efficiently detect the radio frequency signal input by the lower electrode becomes an important subject of automatic control of the semiconductor process in order to stably control the semiconductor process progress in the process chamber.
With the development of semiconductor process technology, pulse modulation signals are becoming the conventional choice of radio frequency signals, and pulse modulation signals are obtained by modulating pulse signals with lower frequency into signals with higher frequency and then mixing the signals with original pulse signals. In the prior art, the rf detection circuit can detect the pulse modulation signal to obtain an initial pulse signal, however, in order to obtain a dc signal which can be used for real-time detection of the reaction condition or feedback control of the power supply, the pulse signal needs to be converted into a dc signal.
In the prior art, a secondary detection or sample-and-hold mode is usually adopted to obtain a direct current signal, however, because the time constant of the secondary detection and the sample-and-hold is too long, the finally obtained detection signal cannot keep real-time performance, and is difficult to cope with the actual production process with various situations. Therefore, how to provide a detection circuit capable of accurately detecting the rf signal received by the bottom electrode in real time is a technical problem to be solved in the art.
Disclosure of Invention
The present invention is directed to providing a circuit assembly capable of accurately detecting a radio frequency signal received by a lower electrode in real time, a signal detection method, and a semiconductor process apparatus.
To achieve the above object, as an aspect of the present invention, there is provided a circuit assembly for detecting a pulse modulation signal on a lower electrode in semiconductor process equipment, the circuit assembly including a radio frequency signal detection circuit for converting the pulse modulation signal into a pulse signal before modulation and detecting the pulse signal to obtain a detection pulse signal, the circuit assembly further including a detection result processing circuit group capable of adjusting a signal amplitude in each period of the detection pulse signal to a corresponding received signal amplitude occurring in a corresponding period.
Optionally, the signal of the pulse signal in each period includes alternating high-level edges and zero-level edges, the signal of the detection pulse signal in each period includes rising edges and peak sections corresponding to the high-level edges, and falling edges and zero-level sections corresponding to the zero-level edges, the level of the peak section corresponds to the amplitude of the high-level edges, and the set of detection result processing circuits includes a sample-and-hold circuit capable of adjusting the signal amplitudes of the falling edges and the zero-level sections of the detection pulse signal in each period to a representative amplitude corresponding to the highest amplitude of the detection pulse signal occurring in the corresponding period.
Optionally, the sample-and-hold circuit adjusts the detection pulse signal under driving of a first synchronous control signal, a waveform of the first synchronous control signal being identical to a waveform of the pulse signal, and the sample-and-hold circuit is capable of adjusting a signal amplitude of the detection pulse signal when the first synchronous control signal is at a zero level edge to an amplitude of the detection pulse signal when the first synchronous control signal is at a high level edge in a corresponding period.
Optionally, the detection result processing circuit group further includes a synchronous signal processing circuit capable of controlling the sample hold circuit to adjust the signal amplitude of the rising edge in each cycle of the detection pulse signal to the amplitude of the peak section preceding the rising edge.
Optionally, the synchronous signal processing circuit is configured to receive the first synchronous control signal, and extend the duration of a zero level edge in the first synchronous control signal backward to obtain a second synchronous control signal, and the sample-and-hold circuit is capable of keeping the amplitude of the detection pulse signal the same as the amplitude of the detection pulse signal at the beginning of the zero level edge during the period when the second synchronous control signal is at the zero level edge.
Optionally, the synchronization signal processing circuit includes a schmitt trigger configured to obtain the second synchronization control signal according to the first synchronization control signal.
Optionally, the extended duration of the zero-level edge is greater than or equal to the duration of the rising edge of the detection pulse signal in the corresponding period.
Optionally, the detection result processing circuit group further includes a filter output circuit, and the filter output circuit is configured to receive the detection pulse signal processed by the sample-and-hold circuit, and reduce the signal fluctuation amplitude of the received detection pulse signal.
As a second aspect of the present invention, there is provided a signal detecting method for detecting a pulse modulation signal on a lower electrode in semiconductor process equipment, the detecting method being implemented based on the aforementioned circuit components, the method comprising:
converting the pulse modulation signal into a pulse signal before modulation, and detecting the pulse signal to obtain a detection pulse signal;
and adjusting the signal amplitude of the detection pulse signal in each period to be a characterization amplitude corresponding to the highest amplitude of the detection pulse signal appearing in the corresponding period.
As a third aspect of the present invention, there is provided a semiconductor process apparatus comprising a process chamber, a power supply assembly and a lower electrode disposed in the process chamber, wherein the power supply assembly is configured to modulate a pulse signal with a low frequency to obtain a pulse modulated signal and output the pulse modulated signal to the lower electrode, and further comprising a circuit assembly configured to detect the pulse modulated signal on the lower electrode, wherein the circuit assembly is the circuit assembly described above.
In the circuit assembly, the signal detection method and the semiconductor process equipment provided by the invention, the circuit assembly not only comprises a radio frequency signal detection circuit for detecting a pulse signal, but also comprises a detection result processing circuit group, the detection result processing circuit group can further process the detection result (detection pulse signal) of the radio frequency signal detection circuit, so that the level of the detection pulse signal in each period is kept as the characterization amplitude corresponding to the highest amplitude appearing in the corresponding period of the detection pulse signal, the detection pulse signal is further converted into a direct current signal corresponding to the peak value of the pulse signal in real time, the direct current signal can express the amplitude of the pulse signal emitted by a radio frequency power supply in real time, thereby being capable of accurately detecting the reaction parameters in a process chamber in real time and being also used as a feedback control signal of a power supply assembly in the semiconductor process equipment, the response speed of adjusting the power of the power supply module in real time according to the reaction condition is increased, and the safety of a semiconductor process is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram showing the waveform variation of a detection pulse signal obtained by processing a power pulse modulation signal by a radio frequency detection circuit;
FIG. 2 is a schematic diagram of a circuit structure of a circuit assembly according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a sample-and-hold circuit in a circuit assembly for adjusting a waveform of a detection pulse signal according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a principle that a sample-and-hold circuit in a circuit assembly adjusts a waveform of a detection pulse signal under the control of a synchronous signal processing circuit according to an embodiment of the present invention;
fig. 5 to fig. 6 are schematic diagrams illustrating a filter output circuit of a circuit assembly according to an embodiment of the present invention adjusting a waveform of a detection pulse signal.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The existing lower electrode radio frequency bias voltage detection circuit generally comprises a radio frequency detector and a corresponding peripheral circuit, when a radio frequency signal is a pulse modulation signal, the pulse modulation signal is obtained by modulating a pulse signal emitted by a radio frequency power supply, for example, as shown in fig. 1, the radio frequency signal of an original power supply is a pulse signal with a duty ratio of 100Hz being 50%, and after the pulse signal is modulated into a pulse modulation signal containing a radio frequency signal of 13.56MHz, an output waveform is as shown in the power supply pulse modulation signal in fig. 1 (in fig. 1, the abscissa ratio is large due to amplitude limitation, and the waveform of the radio frequency signal of 13.56MHz is too dense to be approximate to a rectangular solid pattern).
After the rf detection circuit processes the power pulse modulation signal through rf detection, a 13.56MHz rf signal is filtered out, and a detected pulse signal with a duty ratio of 100Hz close to 50% is output, where the highest amplitude of the detected pulse signal is equal to the peak voltage of the power pulse signal (the waveform is as the rf detection output signal in fig. 1, it should be noted that, in fig. 1, for the convenience of the reader, the highest amplitude of the detected pulse signal is shown to be slightly higher than the peak value of the power pulse signal, and the two are actually equal).
However, in the actual detection and control process, the detection signal of the lower electrode and the feedback control signal of the power supply must be constant direct current signals, and the pulse signal output by the radio frequency detector is not constant direct current signals, cannot represent the bias voltage of the lower electrode, and cannot be used for controlling the power supply. If the pulse signal output by the radio frequency detector is converted into a direct current signal, the time constant of the delay of the radio frequency detector can be lengthened (for example, the peak voltage detected in one period is lengthened to 50 to 100 periods, and the peak voltage detected in the first period is used in 49 to 99 periods thereafter), or secondary detection is used, but by using the two methods, the real-time performance of the detected signal is lost, the bias voltage of the lower electrode cannot be detected in real time, and if the detected voltage signal is used for feedback control of the power supply, the non-real-time signal can cause problems of power supply power runaway, output power drifting to the maximum value or the minimum value, and the like.
To solve the above problems, according to an aspect of the present invention, there is provided a circuit assembly for detecting a pulse modulated signal on a lower electrode in a semiconductor processing apparatus, the pulse modulated signal being modulated by a pulse signal having a low frequency (e.g., a pulse signal having a duty ratio of 50% at 100 Hz), the circuit assembly including a radio frequency signal detecting circuit for converting the pulse modulated signal on the lower electrode into a pulse signal having a low frequency before modulation (e.g., the pulse signal having the low frequency is obtained by filtering a high frequency signal (e.g., a 13.56MHz radio frequency signal) in the pulse modulated signal), and detecting the pulse signal to obtain a detected pulse signal. The circuit assembly further comprises a detection result processing circuit group, and the detection result processing circuit group can adjust the signal amplitude of the detection pulse signal in each period to be a characterization amplitude corresponding to the highest amplitude of the detection pulse signal in the corresponding period.
The circuit assembly provided by the invention not only comprises a radio frequency signal detection circuit for detecting a pulse signal, but also comprises a detection result processing circuit group, the detection result processing circuit group can further process the detection result (detection pulse signal) of the radio frequency signal detection circuit, so that the level of the detection pulse signal in each period is kept as the characteristic amplitude corresponding to the peak value in the period, further converting the detected pulse signal into a DC signal corresponding to the peak value of the pulse signal in real time, the direct current signal can express the amplitude of a pulse signal emitted by the radio frequency power supply in real time, so that the reaction parameter in a process chamber can be accurately detected in real time, the direct current signal can also be used as a feedback control signal of a power supply assembly in semiconductor process equipment, the response speed of adjusting the power of the power supply assembly in real time according to the reaction condition is increased, and the safety of a semiconductor process is improved.
The conversion relationship between the highest amplitude and the corresponding characterization amplitude is not specifically limited in the embodiments of the present invention, for example, optionally, the highest amplitude appearing in each period may be multiplied by a certain fixed coefficient to obtain the characterization amplitude (for example, when the amplitude of the highest amplitude is too small to be accurately detected, the radio frequency signal detection circuit may amplify the highest amplitude to obtain the corresponding characterization amplitude, and the amplification ratio of each period is consistent, so that the change of the power supply assembly power can still be reflected in real time by the characterization amplitude).
It should be noted that, in the present invention, a high frequency signal refers to a signal having a frequency higher than 3MHz, and a low frequency signal refers to a signal having a frequency lower than 3MHz, for example, the frequency of the pulse signal is lower than 3 MHz. The waveform of the pulse signal is not particularly limited in the embodiments of the present invention, for example, as a kind of power pulse signal commonly used in the art, the pulse signal may be a rectangular wave signal, the signal of the pulse signal in each period includes alternating high level edges and zero level edges, and the power supply component of the semiconductor processing equipment can obtain a high frequency signal with the same amplitude as the high level edges according to the modulation of the high level edges.
As shown in fig. 3, the signal in each period of the detection pulse signal includes a rising edge and a peak segment corresponding to the high level edge, and a falling edge and a zero level segment corresponding to the zero level edge, and the level of the peak segment corresponds to the amplitude of the high level edge, for example, the level of the peak segment may be the amplitude of the high level edge of the pulse signal multiplied by a fixed coefficient, or the level of the peak segment is equal to the amplitude of the high level edge of the pulse signal.
The embodiment of the present invention does not specifically limit how the detection result processing circuit set adjusts the detection pulse signal, for example, as shown in fig. 2 and fig. 3, the detection result processing circuit set may include a sample-and-hold circuit, and the sample-and-hold circuit may adjust the signal amplitude of the falling edge and the zero level section of the detection pulse signal in each period (including the peak section, the falling edge, the zero level section, and the rising edge that are consecutive in sequence) to the amplitude of the peak section in the corresponding period (i.e., in the same period). That is, sampling is performed when the pulse signal is ON (i.e., in a high level edge period), the output voltage is the peak voltage of the pulse signal, and the peak level of the detection pulse signal is held when the pulse signal is OFF (i.e., in a zero level edge period).
For example, as an optional implementation manner of the present invention, the sample-and-hold circuit adjusts the detection pulse signal under driving of a first synchronous control signal, a waveform of the first synchronous control signal is identical to a waveform of the pulse signal, and the sample-and-hold circuit can adjust a signal amplitude of the detection pulse signal to an amplitude of the detection pulse signal when the first synchronous control signal is at a high level edge in a corresponding period when the first synchronous control signal is at a zero level edge.
In the embodiment of the invention, the waveform of the first synchronous control signal is the same as that of the pulse signal sent by the power supply, the sampling and holding circuit determines the end time of the peak section of the detection pulse signal according to the zero level edge of each period of the first synchronous control signal, and the level of the peak section is read as the holding level when the first synchronous control signal is at the zero level edge.
As shown in fig. 3, the waveform of the detection pulse signal adjusted by the sample-and-hold circuit according to the first synchronous control signal is shown schematically, and after the detection pulse signal is adjusted by the sample-and-hold circuit according to the first synchronous control signal, the falling edge and the zero level section of the detection pulse signal have been adjusted to be consistent with the peak value section, however, there is also a rising edge in the detection pulse signal, and a gap signal will be generated between the rising edge and the adjusted zero level section, resulting in unstable level of the level signal.
To solve the problem, as shown in fig. 2 and 4, the detection result processing circuit set preferably further includes a synchronous signal processing circuit, and the synchronous signal processing circuit can control the sample-and-hold circuit to adjust the signal amplitude of the rising edge in each cycle of the detection pulse signal to the amplitude of the peak section before the rising edge (i.e. the peak section in the same cycle), so as to eliminate the gap signal generated by the rising edge and improve the stability of the finally obtained level signal.
For example, as an optional implementation manner of the present invention, the synchronous signal processing circuit is configured to receive a first synchronous control signal, and extend a duration of a zero level edge in the first synchronous control signal backward to obtain a second synchronous control signal, and the sample-and-hold circuit is configured to keep an amplitude of the detection pulse signal the same as an amplitude of the detection pulse signal at a beginning of the zero level edge during a period when the second synchronous control signal is at the zero level edge.
In the embodiment of the present invention, the synchronous signal processing circuit can lower the duty ratio of the first synchronous control signal, and extend the duration of the zero level edge of the first synchronous control signal backward to obtain the second synchronous control signal, so that the sampling and holding circuit continuously maintains the amplitude of the detection pulse signal as the amplitude of the peak segment during the period when the second synchronous control signal is at the zero level edge, thereby eliminating the gap signal generated by the rising edge and improving the stability of the finally obtained level signal.
The circuit structure of the synchronization signal processing circuit is not particularly limited in the embodiments of the present invention, and for example, as an alternative implementation manner of the present invention, the synchronization signal processing circuit may include a schmitt trigger.
It should be noted that the synchronous signal processing circuit extends the duration of the zero-level edge to be greater than or equal to the duration of the rising edge of the detection pulse signal in the corresponding period, so as to cover the time period of the gap signal caused by the rising edge in each period.
In order to further improve the stability of the processed detection pulse signal (i.e., the level signal), it is preferable that the detection result processing circuit group further includes a filter output circuit for reducing the signal fluctuation amplitude of the received detection pulse signal, as shown in fig. 2.
Fig. 5 shows that the voltage signal of the level signal obtained by processing the detection result processing circuit group without the filter output circuit and with the load impedance fluctuation has a large fluctuation, and fig. 6 shows that the fluctuation amplitude of the output voltage signal after the filter output circuit is added is obviously reduced.
In the embodiment of the present invention, the detection result processing circuit set further includes a filtering output circuit, and the filtering output circuit can reduce the fluctuation amplitude of the dc signal output by the sample-and-hold circuit, so as to filter undesirable fluctuations such as voltage fluctuation caused by interference signals or load changes on the corresponding transmission line, improve the anti-interference capability of the dc signal, further enable the subsequent level value of the dc signal to be detected more accurately and stably, and improve the accuracy of detecting the lower electrode state and performing feedback control on the rf power supply.
As a second aspect of the present invention, there is also provided a signal detecting method for detecting a pulse modulated signal on a lower electrode in semiconductor processing equipment, the detecting method being implemented based on the circuit components provided in the previous embodiments, the method comprising:
in step S1, the pulse modulation signal is converted into a pulse signal before modulation, and the pulse signal is detected to obtain a detected pulse signal;
in step S2, the signal amplitude of each period of the detection pulse signal is adjusted to the characterization amplitude corresponding to the highest amplitude of the detection pulse signal occurring in the corresponding period.
In the signal detection method provided by the invention, the circuit assembly can further process the detection result (detection pulse signal) of the radio frequency signal detection circuit, so that the level of the detection pulse signal in each period is kept as the characterization amplitude corresponding to the peak value in the period, the detection pulse signal is further converted into the direct current signal corresponding to the peak value of the pulse signal in real time, and the direct current signal can express the amplitude of the pulse signal emitted by the radio frequency power supply in real time, so that the reaction parameters in a process chamber can be accurately detected in real time, and the direct current signal can be used as a feedback control signal of the power supply assembly in semiconductor process equipment, thereby improving the response speed of adjusting the power of the power supply assembly in real time according to the reaction condition and improving the safety of a semiconductor process.
As a third aspect of the present invention, there is also provided a semiconductor processing apparatus including a process chamber, a power supply assembly and a lower electrode disposed in the process chamber, the power supply assembly being configured to modulate a pulse signal with a low frequency to obtain a pulse modulated signal and output the pulse modulated signal to the lower electrode, and a circuit assembly configured to detect the pulse modulated signal on the lower electrode, wherein the circuit assembly is the circuit assembly provided in the embodiment of the present invention.
In the semiconductor process equipment provided by the invention, the circuit assembly not only comprises a radio frequency signal detection circuit for detecting a pulse signal, but also comprises a detection result processing circuit group, wherein the detection result processing circuit group can further process the detection result (detection pulse signal) of the radio frequency signal detection circuit, so that the level of each period of the detection pulse signal is kept as a characterization amplitude corresponding to the peak value in the period, the detection pulse signal is further converted into a direct current signal corresponding to the peak value of the pulse signal in real time, the direct current signal can express the amplitude of the pulse signal emitted by a radio frequency power supply in real time, and thus the reaction parameter in a process chamber can be accurately detected in real time, and the direct current signal can be used as a feedback control signal of the power supply assembly in the semiconductor process equipment to improve the response speed of adjusting the power supply assembly power in real time according to the reaction condition, the safety of the semiconductor process is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A circuit assembly for detecting a pulse modulation signal on a lower electrode in semiconductor process equipment, the circuit assembly comprising a radio frequency signal detection circuit for converting the pulse modulation signal into a pulse signal before modulation and detecting the pulse signal to obtain a detection pulse signal, the circuit assembly further comprising a detection result processing circuit group capable of adjusting a signal amplitude in each period of the detection pulse signal to a characteristic amplitude corresponding to a highest amplitude occurring in a corresponding period of the detection pulse signal.
2. The circuit assembly of claim 1, wherein the signal of the pulse signal in each period comprises alternating high-level edges and zero-level edges, the signal of the detected pulse signal in each period comprises rising edges and peak segments corresponding to the high-level edges, and falling edges and zero-level segments corresponding to the zero-level edges, the level of the peak segments corresponds to the amplitude of the high-level edges, and the set of detection result processing circuits comprises a sample-and-hold circuit capable of adjusting the signal amplitudes of the falling edges and the zero-level segments of the detected pulse signal in each period to the amplitude of the peak segments in the corresponding period.
3. The circuit assembly of claim 2, wherein the sample-and-hold circuit adjusts the detection pulse signal driven by a first synchronization control signal having a waveform that coincides with a waveform of the pulse signal, the sample-and-hold circuit being capable of adjusting a signal amplitude of the detection pulse signal when the first synchronization control signal is at a zero level edge to an amplitude of the detection pulse signal when the first synchronization control signal is at a high level edge in a corresponding period.
4. The circuit assembly according to claim 2 or 3, wherein the detection result processing circuit group further includes a synchronous signal processing circuit capable of controlling the sample-and-hold circuit to adjust the signal amplitude of the rising edge in each period of the detection pulse signal to the amplitude of the peak section preceding the rising edge.
5. The circuit assembly according to claim 4, wherein the synchronization signal processing circuit is configured to receive the first synchronization control signal and extend the duration of a zero-level edge in the first synchronization control signal back to obtain a second synchronization control signal, and the sample-and-hold circuit is configured to keep the amplitude of the detection pulse signal the same as the amplitude of the detection pulse signal at the beginning of the zero-level edge during a period when the second synchronization control signal is at the zero-level edge.
6. The circuit assembly of claim 5, wherein the synchronization signal processing circuit comprises a Schmitt trigger for deriving the second synchronization control signal according to the first synchronization control signal.
7. The circuit assembly of claim 5, wherein the extended duration of the zero-level edge is greater than or equal to the duration of the rising edge of the detection pulse signal within the corresponding period.
8. The circuit assembly according to claim 2 or 3, wherein the set of detection result processing circuits further comprises a filter output circuit, and the filter output circuit is configured to receive the detection pulse signal processed by the sample-and-hold circuit and reduce the signal fluctuation amplitude of the received detection pulse signal.
9. A signal detection method for detecting a pulse modulated signal on a lower electrode in semiconductor processing equipment, wherein the detection method is implemented based on the circuit assembly of any one of claims 1 to 8, and the method comprises:
converting the pulse modulation signal into a pulse signal before modulation, and detecting the pulse signal to obtain a detection pulse signal;
and adjusting the signal amplitude of the detection pulse signal in each period to be a characterization amplitude corresponding to the highest amplitude of the detection pulse signal appearing in the corresponding period.
10. A semiconductor processing apparatus comprising a process chamber, a power supply assembly and a lower electrode disposed in the process chamber, the power supply assembly being configured to modulate a pulse signal having a low frequency to obtain a pulse modulated signal and output the pulse modulated signal to the lower electrode, the semiconductor processing apparatus further comprising a circuit assembly configured to detect the pulse modulated signal on the lower electrode, wherein the circuit assembly is the circuit assembly of any one of claims 1 to 8.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114325189A (en) * | 2021-12-29 | 2022-04-12 | 上海联影医疗科技股份有限公司 | Working state detection method, system, device and equipment of magnetron |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689795A (en) * | 1984-04-27 | 1987-08-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser controller |
| JPH0349407A (en) * | 1989-07-18 | 1991-03-04 | Denki Kogyo Co Ltd | Level control type pulse modulator |
| JPH0787071A (en) * | 1993-09-09 | 1995-03-31 | Nec Corp | Synchronization detection circuit |
| JPH08162866A (en) * | 1994-12-08 | 1996-06-21 | Fujitsu General Ltd | Automatic gain control circuit |
| JPH10135541A (en) * | 1996-10-31 | 1998-05-22 | Dainippon Screen Mfg Co Ltd | Semiconductor laser driving device |
| JP2002288991A (en) * | 2001-03-27 | 2002-10-04 | Shimada Phys & Chem Ind Co Ltd | Automatic sample-and-hold device, and pulse modulated high frequency signal generating device |
| JP2006217098A (en) * | 2005-02-02 | 2006-08-17 | Nec Saitama Ltd | Automatic level control device and method thereof |
| CN101542857A (en) * | 2006-09-20 | 2009-09-23 | 朗姆研究公司 | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
| JP2010258605A (en) * | 2009-04-22 | 2010-11-11 | Japan Radio Co Ltd | Pulse detector |
| JP2010263452A (en) * | 2009-05-08 | 2010-11-18 | Shindengen Electric Mfg Co Ltd | High frequency power supply apparatus |
-
2020
- 2020-11-17 CN CN202011286708.XA patent/CN112468118A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689795A (en) * | 1984-04-27 | 1987-08-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser controller |
| JPH0349407A (en) * | 1989-07-18 | 1991-03-04 | Denki Kogyo Co Ltd | Level control type pulse modulator |
| JPH0787071A (en) * | 1993-09-09 | 1995-03-31 | Nec Corp | Synchronization detection circuit |
| JPH08162866A (en) * | 1994-12-08 | 1996-06-21 | Fujitsu General Ltd | Automatic gain control circuit |
| JPH10135541A (en) * | 1996-10-31 | 1998-05-22 | Dainippon Screen Mfg Co Ltd | Semiconductor laser driving device |
| JP2002288991A (en) * | 2001-03-27 | 2002-10-04 | Shimada Phys & Chem Ind Co Ltd | Automatic sample-and-hold device, and pulse modulated high frequency signal generating device |
| JP2006217098A (en) * | 2005-02-02 | 2006-08-17 | Nec Saitama Ltd | Automatic level control device and method thereof |
| CN101542857A (en) * | 2006-09-20 | 2009-09-23 | 朗姆研究公司 | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
| JP2010258605A (en) * | 2009-04-22 | 2010-11-11 | Japan Radio Co Ltd | Pulse detector |
| JP2010263452A (en) * | 2009-05-08 | 2010-11-18 | Shindengen Electric Mfg Co Ltd | High frequency power supply apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 许传忠, 杨春涛, 杨绪军: "脉冲信号稳幅方法研究", 宇航计测技术, no. 01, 20 February 2005 (2005-02-20) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114325189A (en) * | 2021-12-29 | 2022-04-12 | 上海联影医疗科技股份有限公司 | Working state detection method, system, device and equipment of magnetron |
| CN114325189B (en) * | 2021-12-29 | 2024-04-05 | 上海联影医疗科技股份有限公司 | Method, system, device and equipment for detecting working state of magnetron |
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