CN112466994A - Deep mesa type photoelectronic device and electrode photoetching preparation method thereof - Google Patents
Deep mesa type photoelectronic device and electrode photoetching preparation method thereof Download PDFInfo
- Publication number
- CN112466994A CN112466994A CN202011302059.8A CN202011302059A CN112466994A CN 112466994 A CN112466994 A CN 112466994A CN 202011302059 A CN202011302059 A CN 202011302059A CN 112466994 A CN112466994 A CN 112466994A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- layer
- deep mesa
- reverse
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001259 photo etching Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 134
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000005693 optoelectronics Effects 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 30
- 238000010521 absorption reaction Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application relates to a deep mesa type photoelectronic device and an electrode photoetching preparation method thereof, wherein the method comprises the following steps: processing to form a deep mesa etching device; uniformly coating a first layer of reverse photoresist on the deep mesa etching device, and carrying out first hardening baking to solidify the first layer of reverse photoresist; uniformly coating a second layer of reverse photoresist on the first layer of reverse photoresist, and performing second hardening baking to enable the thickness of all the photoresist to cover the side wall of the absorption region; sequentially completing the processes of mask exposure, reversal baking, flood exposure and development to form the photoresist with a bowl-shaped structure; and sequentially carrying out metal growth deposition and metal lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching. The electrode photoetching preparation method of the deep mesa type optoelectronic device effectively solves the problem of short circuit failure of the device caused by insufficient side wall photoresist coverage, and improves the yield of an electrode lift-off process.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a deep mesa type optoelectronic device and an electrode photoetching preparation method thereof.
Background
The existing electrode contact method for realizing the photoelectronic device can be divided into two types of electrode growth by deep mesa etching and electrode growth by back grinding and polishing according to the structure and the function of the device.
For a deep mesa etching and electrode growth process route, an electrode contact area is manufactured by a deep mesa etching method, the mesa depth is the length between a P contact layer and an n contact layer in a photoelectronic device structure, for photoelectronic devices with complex structures, such as an avalanche photodiode, a back-to-back P pi MN type bicolor infrared photodiode and the like, the length value of the pn contact layer is larger and is generally larger than 5 micrometers, and therefore the depth of the etched mesa is also larger than 5 micrometers.
In the subsequent electrode growth photoetching, in the normal photoetching process, the coverage effect of the photoresist thickness on the side wall of the deep mesa is poor, so that the electrode can be partially deposited on the side wall of the mesa in the electrode growth process, and further, the device can be short-circuited; on the other hand, the existing common photoresist only has a second layer of photoresist, after reverse baking, the second layer of reverse photoresist reverses, the positive photoresist becomes negative photoresist, an inverted trapezoidal photoresist structure can be formed after development, and the lift-off process of the strong-adhesion electrode grown by the magnetron sputtering equipment is difficult.
Disclosure of Invention
The embodiment of the application provides a deep mesa type optoelectronic device and an electrode photoetching preparation method thereof, and aims to solve the technical problems that the device is short-circuited and fails and an electrode lift-off process is difficult in the related technology.
In a first aspect, a method for preparing an electrode of a deep mesa optoelectronic device by photolithography is provided, which comprises the steps of:
processing to form a deep mesa etching device, wherein the deep mesa etching device comprises a P contact area, an absorption area, an N contact area and a substrate;
uniformly coating a first layer of reverse photoresist on the deep mesa etching device, and performing first hardening baking to solidify the first layer of reverse photoresist;
uniformly coating a second layer of reverse photoresist on the first layer of reverse photoresist, and performing second hardening baking to enable the thickness of all photoresist to cover the side wall of the absorption region;
sequentially completing the processes of mask exposure, reversal baking, flood exposure and development to form the photoresist with a bowl-shaped structure;
and sequentially carrying out metal growth deposition and metal stripping lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching.
In some embodiments, the steps of sequentially performing the mask exposure, the reverse baking, the flood exposure, and the developing to form the bowl-shaped photoresist include:
controlling the exposure time of the mask to ensure that the second layer of the reverse photoresist is fully exposed, and the edge of the side wall of the first layer of the reverse photoresist is not fully exposed;
after the reversal baking, the edge of the first layer reversal photoresist side wall can not be reversed and still presents the positive photoresist characteristic, the edge of the first layer reversal photoresist side wall is dissolved away in the developing process, and the second layer reversal photoresist is reversed, so that the curvature of the first layer reversal photoresist is larger than that of the second layer reversal photoresist, and the photoresist with a bowl-shaped structure is formed.
In some embodiments, the mask is exposed for a time in a range of 1-1.5 s.
In some embodiments, the ratio of the time of the flood exposure to the time of the mask exposure is in the range of 10 to 15. In some embodiments, the temperature of the reverse baking is 110 ℃, and the time of the reverse baking is 65-75 s.
In some embodiments, the development time is 70 to 90 seconds.
In some embodiments, the temperature of the first hard film baking is 105-115 ℃, the time of the first hard film baking is 5min, the temperature of the second hard film baking is 95-100 ℃, and the time of the second hard film baking is 60-90 s.
In some embodiments, the step of uniformly coating the first layer of reverse photoresist on the deep mesa etching device includes:
designing the thickness of the first layer of reverse photoresist according to the mesa depth of the deep mesa etching device;
and adjusting the rotating speed of a spin coater according to the thickness of the first layer of reverse photoresist, wherein the rotating speed of the spin coater is inversely proportional to the thickness of the first layer of reverse photoresist.
In some embodiments, the specific steps of sequentially performing metal growth deposition and metal lift-off include:
performing metal growth deposition on the deep mesa type photoelectronic device of the photoresist with the bowl-shaped structure through a magnetron sputtering machine;
and immersing the deep mesa type optoelectronic device after metal growth and deposition into an acetone solution to finish metal lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching.
In a second aspect, a deep mesa optoelectronic device is provided, which is formed by applying the electrode photolithography preparation method of the deep mesa optoelectronic device.
The beneficial effect that technical scheme that this application provided brought includes: the problem of short circuit failure of a device caused by insufficient side wall photoresist coverage is effectively solved, and the yield of an electrode lift-off process is improved.
In the electrode photoetching preparation method of the deep mesa type optoelectronic device, twice photoresist is performed, the thickness of the photoresist is increased, the thickness of all the photoresist covers the side wall of an absorption region, namely the mesa side wall of a deep mesa etching device, and the problem of short circuit failure of the device caused by insufficient coverage of the side wall photoresist is effectively solved; and through the mask exposure, the reversal baking, the flood exposure and the development process, the photoresist with a bowl-shaped structure is formed, the structure of the photoresist is adjusted, and the yield of the lift-off process of the electrode is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of an electrode photolithography method for manufacturing a deep mesa optoelectronic device according to an embodiment of the present disclosure;
FIG. 2 is a graph showing the relationship between the film thickness and the rotation speed of the spin coater according to the embodiment of the present application;
FIG. 3 is a flowchart illustrating specific steps of a method for fabricating an electrode of a deep mesa optoelectronic device according to an embodiment of the present disclosure;
fig. 4 is a schematic view of an epitaxial structure of a deep mesa optoelectronic device provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of a deep mesa etching device according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a first layer of an inverse photoresist provided in an embodiment of the present application;
FIG. 7 is a schematic diagram of a second layer of an inverse photoresist provided in an embodiment of the present application;
FIG. 8 is a schematic view of a bowl-shaped photoresist provided in an embodiment of the present application;
FIG. 9 is a schematic illustration of a deep mesa optoelectronic device according to an embodiment of the present disclosure undergoing metal growth deposition;
FIG. 10 is a schematic view of a metal lift-off provided in an embodiment of the present application.
In the figure, 1, a deep mesa etching device; 11. a P contact region; 12. an absorption zone; 13. an N contact region; 14. a substrate; 2. a first layer of reverse photoresist; 3. a second layer of reverse photoresist; 4. a metal.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1 to 10, an embodiment of the present application provides an electrode photolithography preparation method for a deep mesa type optoelectronic device, including the steps of:
s1: processing to form a deep mesa etching device 1, wherein the deep mesa etching device 1 comprises a P contact region 11, an absorption region 12, an N contact region 13 and a substrate 14;
s2: uniformly coating a first layer of reverse photoresist 2 on the deep mesa etching device 1, and performing first hardening baking to solidify the first layer of reverse photoresist 2;
s3: uniformly coating a second layer of reverse photoresist 3 on the first layer of reverse photoresist 2, and performing second hardening baking to enable the thickness of all photoresist to cover the absorption region 12;
s4: sequentially completing the processes of mask exposure, reversal baking, flood exposure and development to form the photoresist with a bowl-shaped structure;
s5: and sequentially carrying out metal growth deposition and metal stripping lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching.
In the electrode photoetching preparation method of the deep mesa type optoelectronic device, the photoresist is performed twice, the thickness of the photoresist is increased, the side wall of the absorption region 12 is covered by the thickness of all the photoresist, namely the mesa side wall of the deep mesa etching device 1 is covered, and the problem of short circuit failure of the device caused by insufficient coverage of the side wall photoresist is effectively solved; and through the mask exposure, the reversal baking, the flood exposure and the development process, the photoresist with a bowl-shaped structure is formed, the structure of the photoresist is adjusted, and the yield of the lift-off process of the electrode is improved.
Further, in the embodiment of the present application, the steps of sequentially performing the mask exposure, the reverse baking, the flood exposure, and the developing to form the bowl-shaped photoresist include:
controlling the exposure time of the mask to ensure that the second layer of the reverse photoresist 3 is fully exposed, and the edge of the side wall of the first layer of the reverse photoresist 2 is not fully exposed;
after the reversal baking, the edge of the side wall of the first layer reversal photoresist 2 can not be reversed and still presents the positive photoresist characteristic, the edge of the side wall of the first layer reversal photoresist 2 is dissolved away in the developing process, and the second layer reversal photoresist 3 is reversed, so that the curvature of the first layer reversal photoresist 2 is larger than that of the second layer reversal photoresist 3, and the photoresist with a bowl-shaped structure is formed.
Compared with the photoresist with the inverted trapezoid structure in the prior art, the photoresist with the bowl-shaped structure improves the yield of the lift-off process of the electrode, and has a good effect.
Furthermore, in the embodiment of the present application, the mask exposure time is in a range of 1-1.5 s. The ratio range of the flood exposure time to the mask exposure time is 10-15. The reverse baking temperature is 110 ℃, and the reverse baking time is 65-75 s. The developing time is 70-90 s. The temperature of the first hardening baking is 105-115 ℃, the time of the first hardening baking is 5min, the temperature of the second hardening baking is 95-100 ℃, and the time of the second hardening baking is 60-90 s.
In the embodiment of the application, by setting the process parameters, the electrode photoetching effect of the deep mesa type optoelectronic device is better, and the performance is better.
The technological parameter setting of first time hardening toasting and second time hardening toasts in this application is different, the purpose of solidification photoresist is in order to play in the first time hardening toasting, evenly scribble second floor reversal photoresist 3 again in the solidification of first layer reversal photoresist 2, just can really realize two-layer photoresist, form the photoresist of bowl form, the second time hardening toasts only need play conventional stoving effect can, need not to solidify second floor reversal photoresist 3, therefore, in this application embodiment, the parameter setting of twice hardening toasts is different.
Further, in the embodiment of the present application, the step of uniformly coating the first layer of inverse photoresist 2 on the deep mesa etching device 1 specifically includes:
designing the thickness of the first layer of reverse photoresist 2 according to the mesa depth of the deep mesa etching device 1;
and adjusting the rotating speed of a spin coater according to the thickness of the first layer of reverse photoresist 2, wherein the rotating speed of the spin coater is inversely proportional to the thickness of the first layer of reverse photoresist 2.
Similarly, the specific step of uniformly coating the second layer of reverse photoresist 3 on the first layer of reverse photoresist 2 comprises:
designing the thickness of the second layer of reverse photoresist 3 according to the mesa depth of the deep mesa etching device 1;
and adjusting the rotating speed of a spin coater according to the thickness of the second layer of reverse photoresist 3, wherein the rotating speed of the spin coater is inversely proportional to the thickness of the second layer of reverse photoresist 3.
Taking the depth of a PN junction of the deep mesa etching device 1 as 3-5 micrometers as an example, the depth of the PN junction is the sum of the thicknesses of the P contact region 11, the absorption region 12 and the N contact region 13, at this time, the thickness of the first layer of reverse photoresist 2 can be designed to be 2.6 micrometers, and the thickness of the second layer of reverse photoresist 3 is designed to be 2 micrometers, so that the thicknesses of the first layer of reverse photoresist 2 and the second layer of reverse photoresist 3 cover the absorption region 12.
The thickness of the first layer of reverse photoresist 2 and the thickness of the second layer of reverse photoresist 3 are collectively called as film thickness, the film thickness is in inverse proportion to the rotating speed of the spin coater, and the relational expression is shown in fig. 2. In fig. 2, the abscissa represents the rotation speed of the spin coater, and the ordinate represents the film thickness, which are in inverse proportion to each other.
Further, in the embodiment of the present application, the specific steps of sequentially performing metal growth deposition and metal lift-off include:
performing metal growth deposition on the deep mesa type photoelectronic device of the photoresist with the bowl-shaped structure through a magnetron sputtering machine;
and immersing the deep mesa type optoelectronic device after metal growth and deposition into an acetone solution to finish metal lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching.
Referring to fig. 3, the embodiment of the present application further provides specific steps of the electrode photolithography manufacturing method of the deep mesa optoelectronic device, including:
a1: manufacturing an epitaxial structure of the deep mesa type optoelectronic device, wherein the epitaxial structure sequentially comprises a P contact region 11, an absorption region 12, an N contact region 13 and a substrate 14 from top to bottom, as shown in FIG. 4;
a2: performing mesa etching on the epitaxial structure, and processing to form a deep mesa etching device 1, as shown in fig. 5;
a3: uniformly coating a first layer of reverse photoresist 2 on the deep mesa etching device 1, and performing first film hardening baking to solidify the first layer of reverse photoresist 2, wherein the thickness of the first layer of reverse photoresist 2 is not enough to cover the side wall of the absorption region 12, as shown in fig. 6;
a4: uniformly coating a second layer of reverse photoresist 3 on the first layer of reverse photoresist 2, and performing second hardening baking to make the thickness of all the photoresist cover the side wall of the absorption region 12, wherein the second layer of reverse photoresist 3 and the first layer of reverse photoresist 2 are the same type of photoresist, as shown in fig. 7;
a5: sequentially completing the mask exposure, the reverse baking, the flood exposure and the development process to form the photoresist with the bowl-shaped structure, wherein the photoresist with the bowl-shaped structure is a structure with a small curvature of the second layer of reverse photoresist 3 and a large curvature and an inward concave of the first layer of reverse photoresist 2, as shown in fig. 8;
a6: performing metal growth deposition on the deep mesa type optoelectronic device of the photoresist with the bowl-shaped structure through a magnetron sputtering machine, as shown in fig. 9, wherein part of the metal 4 is located on the second layer of the reverse photoresist 3, and part of the metal 4 is located in the cavity of the first layer of the reverse photoresist 2;
a7: and immersing the deep mesa type optoelectronic device after metal growth and deposition into an acetone solution to finish metal lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching, as shown in fig. 10.
In the embodiment of the present application, the positions of the P contact region 11 and the N contact region 13 may be interchanged, the preparation method is similar, and details are not described herein, which is understood to be within the protection scope of the present application.
The embodiment of the application also provides a deep mesa type optoelectronic device which is prepared by applying the electrode photoetching preparation method of the deep mesa type optoelectronic device.
The thickness of all the photoresist in the deep mesa type optoelectronic device of the embodiment of the application covers the side wall of the absorption region 12, namely covers the mesa side wall of the deep mesa etching device 1, so that the problem of short circuit failure of the device caused by insufficient coverage of the photoresist on the side wall is effectively solved; and the photoresist with a bowl-shaped structure is used for adjusting the structure of the photoresist, so that the yield of the lift-off process of the electrode is improved.
In the description of the present application, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
It is noted that, in the present application, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description is merely exemplary of the present application and is presented to enable those skilled in the art to understand and practice the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method for preparing an electrode of a deep mesa type photoelectronic device by photoetching is characterized by comprising the following steps:
processing and forming a deep mesa etching device (1), wherein the deep mesa etching device (1) comprises a P contact region (11), an absorption region (12), an N contact region (13) and a substrate (14);
uniformly coating a first layer of reverse photoresist (2) on the deep mesa etching device (1), and performing first hardening baking to solidify the first layer of reverse photoresist (2);
uniformly coating a second layer of reverse photoresist (3) on the first layer of reverse photoresist (2), and performing second hardening baking to enable the side wall of the absorption region (12) to be covered by the thickness of all the photoresist;
sequentially completing the processes of mask exposure, reversal baking, flood exposure and development to form the photoresist with a bowl-shaped structure;
and sequentially carrying out metal growth deposition and metal stripping lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching.
2. The method for preparing an electrode of a deep mesa optoelectronic device according to claim 1, wherein the steps of sequentially performing mask exposure, reverse baking, flood exposure and development to form the bowl-shaped photoresist comprise:
controlling the exposure time of the mask to ensure that the second layer of the reverse photoresist (3) is fully exposed, and the edge of the side wall of the first layer of the reverse photoresist (2) is not fully exposed;
after the reversal baking, the edge of the side wall of the first layer of reversal photoresist (2) can not be reversed and still presents the positive photoresist characteristic, the edge of the side wall of the first layer of reversal photoresist (2) is dissolved away in the developing process, and the second layer of reversal photoresist (3) is reversed, so that the curvature of the first layer of reversal photoresist (2) is larger than that of the second layer of reversal photoresist (3), and the photoresist with a bowl-shaped structure is formed.
3. The method for preparing an electrode of a deep mesa type optoelectronic device according to claim 1, wherein: the time range of the mask exposure is 1-1.5 s.
4. The method for preparing an electrode of a deep mesa type optoelectronic device according to claim 3, wherein: the ratio range of the flood exposure time to the mask exposure time is 10-15.
5. The method for preparing an electrode of a deep mesa type optoelectronic device according to claim 1, wherein: the reverse baking temperature is 110 ℃, and the reverse baking time is 65-75 s.
6. The method for preparing an electrode of a deep mesa type optoelectronic device according to claim 1, wherein: the developing time is 70-90 s.
7. The method for preparing an electrode of a deep mesa type optoelectronic device according to claim 1, wherein: the temperature of the first hardening baking is 105-115 ℃, the time of the first hardening baking is 5min, the temperature of the second hardening baking is 95-100 ℃, and the time of the second hardening baking is 60-90 s.
8. The method for preparing the electrode of the deep mesa type optoelectronic device according to claim 1, wherein the step of uniformly coating the first layer of the reverse photoresist (2) on the deep mesa etching device (1) comprises the following steps:
designing the thickness of the first layer of reverse photoresist (2) according to the mesa depth of the deep mesa etching device (1);
and adjusting the rotating speed of a spin coater according to the thickness of the first layer of reverse photoresist (2), wherein the rotating speed of the spin coater is inversely proportional to the thickness of the first layer of reverse photoresist (2).
9. The method for preparing the electrode of the deep mesa optoelectronic device according to claim 1, wherein the specific steps of sequentially performing metal growth deposition and metal lift-off comprise:
performing metal growth deposition on the deep mesa type photoelectronic device of the photoresist with the bowl-shaped structure through a magnetron sputtering machine;
and immersing the deep mesa type optoelectronic device after metal growth and deposition into an acetone solution to finish metal lift-off to obtain the deep mesa type optoelectronic device after electrode photoetching.
10. A deep mesa type optoelectronic device, which is produced by applying the method for producing an electrode of a deep mesa type optoelectronic device according to any one of claims 1 to 9 by photolithography.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011302059.8A CN112466994A (en) | 2020-11-19 | 2020-11-19 | Deep mesa type photoelectronic device and electrode photoetching preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011302059.8A CN112466994A (en) | 2020-11-19 | 2020-11-19 | Deep mesa type photoelectronic device and electrode photoetching preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112466994A true CN112466994A (en) | 2021-03-09 |
Family
ID=74837729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011302059.8A Pending CN112466994A (en) | 2020-11-19 | 2020-11-19 | Deep mesa type photoelectronic device and electrode photoetching preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112466994A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1800983A (en) * | 2005-12-31 | 2006-07-12 | 厦门大学 | Anti-stripping photolithography method for integrated circuit |
| US20160276516A1 (en) * | 2013-09-25 | 2016-09-22 | Seoul Viosys Co., Ltd. | Semiconductor photo-detecting device |
| CN107195701A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof |
| CN107193184A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing high-precision chromium plate mask plate circuitous pattern |
-
2020
- 2020-11-19 CN CN202011302059.8A patent/CN112466994A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1800983A (en) * | 2005-12-31 | 2006-07-12 | 厦门大学 | Anti-stripping photolithography method for integrated circuit |
| US20160276516A1 (en) * | 2013-09-25 | 2016-09-22 | Seoul Viosys Co., Ltd. | Semiconductor photo-detecting device |
| CN107195701A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof |
| CN107193184A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing high-precision chromium plate mask plate circuitous pattern |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07302836A (en) | Field oxidized film formation of semiconductor device | |
| CN112466994A (en) | Deep mesa type photoelectronic device and electrode photoetching preparation method thereof | |
| CN107275380B (en) | Metal layer of compound semiconductor and preparation method thereof | |
| CN112864798B (en) | Preparation method of VCSEL chip metal film electrode | |
| KR101043343B1 (en) | Method for manufacturing air-bridge using negative photoresist | |
| CN110718456B (en) | High-reliability T-shaped gate manufacturing method, T-shaped gate and high-electron-mobility transistor | |
| JP3318947B2 (en) | Method for manufacturing solid-state imaging device | |
| CN112133790A (en) | Preparation method of high-speed photoelectric detector | |
| CN101727022A (en) | Photoetching method of photosensitive dry film | |
| CN110661170B (en) | Method for manufacturing isolation structure of semiconductor device and semiconductor device thereof | |
| CN109817570B (en) | Metal connecting line structure of compound semiconductor and manufacturing method thereof | |
| JPH0918117A (en) | Conductor stratification method | |
| JPH03248528A (en) | Manufacture of semiconductor device | |
| JPS6074614A (en) | Manufacture of semiconductor device | |
| KR100200302B1 (en) | Method of laser diode | |
| JP2943283B2 (en) | Method for manufacturing solid-state imaging device | |
| JP3047422B2 (en) | Gate electrode formation method | |
| JPH0429357A (en) | Manufacture of semiconductor device | |
| JPS61161720A (en) | Manufacture of semiconductor device | |
| CN116525433A (en) | Preparation method of metal mask for wafer etching process | |
| JPS61123183A (en) | Manufacture of semiconductor device | |
| CN114755760A (en) | Waveguide exposure method, ridge waveguide and laser | |
| JP2020102592A (en) | Manufacturing method of semiconductor device | |
| JPH0472624A (en) | Manufacture of semiconductor device | |
| JPS59100581A (en) | Manufacture of semiconductor photoelectric device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210309 |