CN112466914A - Silicon-based OLED full-color device structure and manufacturing method thereof - Google Patents
Silicon-based OLED full-color device structure and manufacturing method thereof Download PDFInfo
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- CN112466914A CN112466914A CN202011293732.6A CN202011293732A CN112466914A CN 112466914 A CN112466914 A CN 112466914A CN 202011293732 A CN202011293732 A CN 202011293732A CN 112466914 A CN112466914 A CN 112466914A
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- manufacturing
- silicon
- cover plate
- glass cover
- convex lens
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 35
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Abstract
The invention discloses a silicon-based OLED full-color device structure and a manufacturing method thereof, wherein the manufacturing method of the silicon-based OLED full-color device structure comprises the following steps: manufacturing an anode and a pixel definition layer on a silicon-based substrate to form a sub-pixel layer; evaporating and plating a white light device and an encapsulation layer on the sub-pixel layer; manufacturing an RGB color film on the packaging layer; and pasting a glass cover plate with a double-lens structure on the RGB color film, wherein the two sides of the glass cover plate with the double-lens structure are both configured into convex lens structures, and the convex lens structures on the two sides are symmetrically arranged. The silicon-based OLED full-color device structure and the manufacturing method thereof can manufacture a light-gathering OLED full-color device structure, and avoid the loss of brightness.
Description
Technical Field
The invention relates to a silicon-based OLED display, in particular to a silicon-based OLED full-color device structure and a manufacturing method thereof.
Background
In the semiconductor display industry, especially the silicon-based OLED industry, white light OLED + color filtering is a mass-producible realization mode of the current full color of the silicon-based OLED, and is limited by external quantum light emitting efficiency, and the white light filtered by a color film is emitted through a glass cover plate and has 20-50% brightness loss.
The existing silicon-based OLED full-color device structure is poor in light condensation effect and serious in brightness loss, and a silicon-based OLED full-color device structure needs to be manufactured at the present stage to achieve the light condensation effect.
Disclosure of Invention
The invention aims to provide a silicon-based OLED full-color device structure and a manufacturing method thereof.
In order to achieve the above object, the present invention provides a method for manufacturing a silicon-based OLED full-color device structure, including: manufacturing an anode and a pixel definition layer on a silicon-based substrate to form a sub-pixel layer; evaporating and plating a white light device and an encapsulation layer on the sub-pixel layer; manufacturing an RGB color film on the packaging layer; and pasting a glass cover plate with a double-lens structure on the RGB color film, wherein the two sides of the glass cover plate with the double-lens structure are both configured into convex lens structures, and the convex lens structures on the two sides are symmetrically arranged.
Preferably, the manufacturing method of the silicon-based OLED full-color device structure further comprises the following steps of manufacturing a glass cover plate with a double-lens structure: a first convex lens is manufactured and formed on one side, close to the RGB color film, of the original glass cover plate, wherein the first convex lens is used for carrying out first polymerization on light beams output after passing through the RGB color film; and manufacturing and forming a second convex lens on one side of the original glass cover plate far away from the RGB color film, wherein the second convex lens is used for carrying out second polymerization on the light beam output after the first polymerization.
Preferably, the first convex lens and the second convex lens are configured to be symmetrically disposed.
Preferably, the area of each primary color on the RGB color film corresponds to the convex surface of the glass cover plate.
Preferably, the applying the glass cover plate with the double-lens structure on the RGB color film includes: and pasting the glass cover plate with the double-lens structure on the RGB color film through the pasting glue.
In addition, the invention also provides a silicon-based OLED full-color device which is prepared by the manufacturing method.
According to the technical scheme, the manufacturing method of the silicon-based OLED full-color device structure enables the glass cover plate to be subjected to micromachining treatment, so that double-lens structures are formed in the same-position areas on the front surface and the back surface of the glass cover plate, light emitted from the silicon-based OLED sub-pixel layer is filtered by the RGB color film, is subjected to first polymerization when passing through the first convex lens and is subjected to second polymerization when passing through the second convex lens, and partial scattered light can be collected and focused by about 10% -30% through the two-time polymerization, so that the outgoing light efficiency of the device is improved finally.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart illustrating a method for fabricating a silicon-based OLED full-color device structure according to the present invention; and
FIG. 2 is a structural block diagram illustrating a silicon-based OLED full-color device of the present invention.
Description of the reference numerals
1 sub-pixel layer 2 encapsulation layer
3 RGB color film 4 glass cover plate
5 first convex lens 6 second convex lens
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, the directional words included in the terms such as "up, down, left, right" and the like merely represent the directions of the terms in a conventional use state or are colloquially known by those skilled in the art, and should not be construed as limiting the terms.
Fig. 1 is a manufacturing method of a silicon-based OLED full-color device structure provided by the present invention, and as shown in fig. 1, the manufacturing method of the silicon-based OLED full-color device structure includes:
s101, manufacturing an anode and a pixel definition layer on a silicon-based substrate to form a sub-pixel layer 1;
s102, evaporating and plating a white light device and a packaging layer 2 on the sub-pixel layer 1;
s103, manufacturing an RGB color film 3 on the packaging layer 2; and
and S104, attaching the glass cover plate 4 with the double-lens structure to the RGB color film 3, wherein the two sides of the glass cover plate 4 with the double-lens structure are both configured to be convex lens structures, and the convex lens structures on the two sides are symmetrically arranged. The structure of the manufactured silicon-based OLED full-color device is shown in FIG. 2.
The invention relates to a manufacturing method for an OLED full-color device, wherein the two sides of a glass cover plate 4 with a double-lens structure are both provided with convex lens structures, so that light condensation of two layers is realized, partial scattered light (10% -30%) can be collected and focused, and the outgoing light efficiency of the device is improved finally. The convex lens structure is obtained by performing micro-processing on the glass cover plate 4, wherein the micro-processing mode is fine processing, and two times of polymerization can be realized.
Preferably, the manufacturing method of the silicon-based OLED full-color device structure further comprises the following steps of manufacturing the glass cover plate 4 with a double-lens structure:
a first convex lens 5 is formed on one side of the original glass cover plate 4 close to the RGB color film 3, wherein the first convex lens 5 is used for performing first polymerization on light beams output after passing through the RGB color film 3, and as shown in fig. 1, the first polymerization can realize one-time collection and focusing; and
and manufacturing and forming a second convex lens 6 on one side of the original glass cover plate 4 far away from the RGB color film 3, wherein the second convex lens 6 is used for carrying out second polymerization on the light beam output after the first polymerization, and the second polymerization can realize second collection and focusing. The above two times of mobile phone focusing can collect and focus 10% -30% of scattered light. The convex lens in the invention can be made of high refractive index material.
Preferably, the first convex lens 5 and the second convex lens 6 are configured to be symmetrically disposed.
Preferably, the region where each primary color on the RGB color film 3 is located corresponds to the convex surface of one glass cover plate 4. The processed glass cover plate 4 (i.e. the glass cover plate 4 including the first convex lens 5 and the second convex lens 6) and the processed silicon-based OLED substrate are precisely aligned and attached, i.e. the position of the RGB color film 3 is symmetrical to the position of the glass cover plate 4.
Preferably, the attaching the glass cover plate 4 with the double-lens structure on the RGB color film 3 includes: and pasting the glass cover plate 4 with the double-lens structure on the RGB color film 3 through the pasting glue.
In addition, the invention also provides a silicon-based OLED full-color device which is prepared by the manufacturing method.
Compared with the prior art, the silicon-based OLED full-color device has the same distinguishing technical characteristics and technical effects as the manufacturing method of the silicon-based OLED full-color device structure, and is not repeated herein.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. The manufacturing method of the silicon-based OLED full-color device structure is characterized by comprising the following steps of:
manufacturing an anode and a pixel definition layer on a silicon-based substrate to form a sub-pixel layer;
evaporating and plating a white light device and an encapsulation layer on the sub-pixel layer;
manufacturing an RGB color film on the packaging layer; and
and pasting a glass cover plate with a double-lens structure on the RGB color film, wherein the two sides of the glass cover plate with the double-lens structure are both configured into convex lens structures, and the convex lens structures on the two sides are symmetrically arranged.
2. The method for manufacturing the silicon-based OLED full-color device structure according to claim 1, further comprising manufacturing a glass cover plate with a double-lens structure by:
a first convex lens is manufactured and formed on one side, close to the RGB color film, of the original glass cover plate, wherein the first convex lens is used for carrying out first polymerization on light beams output after passing through the RGB color film; and
and manufacturing and forming a second convex lens on one side of the original glass cover plate far away from the RGB color film, wherein the second convex lens is used for carrying out second polymerization on the light beam output after the first polymerization.
3. The method for manufacturing the silicon-based OLED full-color device structure according to claim 1, wherein the first convex lens and the second convex lens are configured to be symmetrically arranged.
4. The method for manufacturing the silicon-based OLED full-color device structure according to claim 1, wherein the region of each primary color on the RGB color film corresponds to the convex surface of the glass cover plate.
5. The method of claim 1, wherein the step of applying the glass cover plate with the double-lens structure to the RGB color film comprises:
and pasting the glass cover plate with the double-lens structure on the RGB color film through the pasting glue.
6. A silicon-based OLED full-color device, which is prepared by the manufacturing method of any one of claims 1 to 5.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140034919A1 (en) * | 2012-08-02 | 2014-02-06 | Samsung Display Co., Ltd. | Organic light emitting display device with enhanced light efficiency and manufacturing method thereof |
US20140361264A1 (en) * | 2013-06-10 | 2014-12-11 | Samsung Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
CN106920901A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of Full-color OLED micro-display device production method |
CN107331682A (en) * | 2017-06-23 | 2017-11-07 | 安徽熙泰智能科技有限公司 | A kind of silicon substrate OLED micro display chips and its colorization implementation method |
CN111584742A (en) * | 2020-05-13 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
-
2020
- 2020-11-18 CN CN202011293732.6A patent/CN112466914A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140034919A1 (en) * | 2012-08-02 | 2014-02-06 | Samsung Display Co., Ltd. | Organic light emitting display device with enhanced light efficiency and manufacturing method thereof |
US20140361264A1 (en) * | 2013-06-10 | 2014-12-11 | Samsung Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
CN106920901A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of Full-color OLED micro-display device production method |
CN107331682A (en) * | 2017-06-23 | 2017-11-07 | 安徽熙泰智能科技有限公司 | A kind of silicon substrate OLED micro display chips and its colorization implementation method |
CN111584742A (en) * | 2020-05-13 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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Application publication date: 20210309 |