CN112461399A

CN112461399A - Temperature sensing device and temperature measuring method

Info

Publication number: CN112461399A
Application number: CN202011144082.9A
Authority: CN
Inventors: 赖建军; 章旭侬
Original assignee: Huazhong University of Science and Technology; Ezhou Institute of Industrial Technology Huazhong University of Science and Technology
Current assignee: Huazhong University of Science and Technology; Ezhou Institute of Industrial Technology Huazhong University of Science and Technology
Priority date: 2020-10-23
Filing date: 2020-10-23
Publication date: 2021-03-09

Abstract

The embodiment of the invention discloses a temperature sensing device and a temperature measuring method, wherein an outer hollow light pipe and an inner hollow light pipe are coaxially nested in the temperature sensing device in the embodiment of the invention, and the inner hollow light pipe is positioned in the outer hollow light pipe to form an incident light transmission channel and a scattered light transmission channel; the outer hollow light pipe is connected with the heat transfer guide plate through the heat insulation reflection cup, and the thermo-optic modulation unit is arranged on the inner side surface of the heat transfer guide plate; the thermo-optical modulation unit consists of an optical microcavity layer and a nanoparticle layer; the outer hollow light pipe is provided with an optical illuminator, and the scattered light output end of the inner hollow light pipe is provided with an optical detector. When temperature measurement is carried out, the optical illuminator irradiates the thermo-optic modulation unit through the incident light transmission channel, the thermo-optic modulation unit reflects reflected light to the optical detector through the scattered light transmission channel, and dark field scattered light is adopted for temperature detection, so that the noise influence of ambient light and a broadband light source can be reduced, and the sensitivity of temperature measurement is improved.

Description

Temperature sensing device and temperature measuring method

Technical Field

The invention relates to the technical field of temperature sensing, in particular to a temperature sensing device and a temperature measuring method.

Background

Conventional temperature sensors include expansion type temperature sensors, thermoelectric type temperature sensors, radiation type temperature sensors, etc., which are well developed and have been commercially used in a large number of applications.

The optical fiber temperature sensor based on the Fabry-Perot reflected wave interference principle is a new type of temperature sensor which is developed recently, but the manufacturing process is complex, the optical fiber temperature sensor is easily influenced by the noise of ambient light and a broadband light source, and the temperature measurement sensitivity is not high.

Disclosure of Invention

The embodiment of the invention provides a temperature sensing device and a temperature measuring method, which can improve the sensitivity of temperature measurement.

In a first aspect, an embodiment of the present invention provides a temperature sensing apparatus, including: heat transfer baffle, thermal-insulated reflection cup, outer hollow light pipe, interior hollow light pipe, optical illuminator, optical detector, the solid fixed ring of optics transparency and thermo-optic modulation unit, wherein:

the outer hollow light guide pipe and the inner hollow light guide pipe are coaxially nested, the inner hollow light guide pipe is positioned in the outer hollow light guide pipe, and the optical transparent fixing rings are arranged at two ends between the outer hollow light guide pipe and the inner hollow light guide pipe to form an incident light transmission channel and a scattered light transmission channel;

the incident light output end of the outer hollow light pipe is connected with the heat transfer guide plate through the heat insulation reflecting cup, and the thermo-optic modulation unit is arranged on the inner side surface of the heat transfer guide plate;

the thermo-optic modulation unit consists of an optical microcavity layer and a nanoparticle layer, the optical microcavity layer consists of a visible light reflection layer, a thermo-optic thin film layer and a high-refractive-index layer, the visible light reflection layer is connected with the heat transfer guide plate, the thermo-optic thin film layer is connected with the visible light reflection layer, the high-refractive-index layer is connected with the thermo-optic thin film layer, the nanoparticle layer is positioned on the surface of the high-refractive-index layer or inside the thermo-optic thin film layer, and the thermo-optic modulation unit is arranged opposite to the inner hollow light guide tube;

the light source comprises an outer hollow light pipe, an inner hollow light pipe, an optical detector, an optical illuminator and an annular array light source, wherein the optical illuminator is arranged at the incident light input end of the outer hollow light pipe, the optical detector is arranged at the scattered light output end of the inner hollow light pipe, and the optical illuminator is an annular array light source.

In some embodiments, the optical microcavity layer is an FP microcavity or a photonic crystal microcavity.

In some embodiments, the nanoparticle layer is a metal conductive particle or a high optical refractive index dielectric particle.

In some embodiments, the metal conductive particles are Au, Al, Ag or Ni and the dielectric particles are Si, Ge, TiO₂Or Al₂O₃。

In some embodiments, the thermo-optic film layer is composed of optically clear polydimethylsiloxane or Si.

In some embodiments, the optical illuminator is comprised of an LED or a semiconductor laser light source.

In some embodiments, the heat-insulating reflecting cup is made of a low thermal conductivity glass material, and the inner wall of the heat-insulating reflecting cup is plated with an optical reflecting film.

In some embodiments, the substrate of the inner hollow light pipe and the substrate of the outer hollow light pipe are both glass, and the inner wall of the inner hollow light pipe and the inner wall of the outer hollow light pipe are both coated with an optical reflection film.

In some embodiments, the optical detector is a unit photodetector or an area array detector, the unit photodetector is a silicon photodiode, a silicon photocell, or a germanium diode, and the area array detector is a CCD or CMOS image sensor.

In a second aspect, an embodiment of the present invention further provides a temperature measurement method, including:

in some embodiments, the method is applied to a temperature sensing device, comprising:

the heat transfer guide plate of the temperature sensing device is contacted with a target to be measured, and the change of the temperature causes the change of the refractive index of the thermo-optic film layer in the optical microcavity layer, so that the shift of the resonance spectrum of the optical microcavity layer is caused;

irradiating the thermo-optic modulation unit at a large angle through an optical illuminator of the temperature sensing device, wherein the backscattering spectrum of nanoparticles of the nanoparticle layer in the optical microcavity layer shifts when the temperature changes, and backscattering light after shifting is generated;

collecting the back scattering light, and measuring the target scattering light intensity of the target wavelength in the back scattering light through an optical detector in the temperature sensing device;

determining a target electric signal amplitude corresponding to the target scattering light intensity;

and determining the temperature of the target to be detected according to the corresponding relation between the electric signal amplitude corresponding to the target wavelength and the temperature and the target electric signal amplitude.

In a third aspect, an embodiment of the present invention further provides a temperature measurement device, which includes a memory and a processor, where the memory stores a computer program, and the processor executes any one of the steps in the temperature measurement method provided in the embodiment of the present invention when calling the computer program in the memory.

In a fourth aspect, the present invention further provides a computer-readable storage medium, where the computer-readable storage medium stores a plurality of instructions, and the instructions are suitable for being loaded by a processor to perform the steps in any one of the temperature measurement methods provided by the embodiments of the present invention.

The embodiment of the invention provides a temperature sensing device, when temperature is measured, an optical illuminator irradiates a thermo-optic modulation unit through an incident light transmission channel formed by an outer hollow light guide pipe and an inner hollow light guide pipe, the thermo-optic modulation unit reflects reflected light to an optical detector through a scattered light transmission channel in the inner hollow light guide pipe, the whole steps are carried out in the temperature sensing device, and dark field scattered light is adopted for temperature detection, so that the noise influence of ambient light and a broadband light source can be reduced, and the sensitivity of temperature measurement is improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a temperature sensing device provided in an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a thermo-optic modulation unit according to an embodiment of the present invention;

FIG. 3 is a spectrum diagram of the scattering spectrum distribution of the microcavity-particle coupling system using PDMS thermo-optic film according to the present invention at different temperatures;

FIG. 4 is a schematic flow chart of a temperature measurement method provided by an embodiment of the invention;

fig. 5 is a schematic structural diagram of a temperature measuring device according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description that follows, specific embodiments of the present invention are described with reference to steps and symbols executed by one or more computers, unless otherwise indicated. Accordingly, these steps and operations will be referred to, several times, as being performed by a computer, the computer performing operations involving a processing unit of the computer in electronic signals representing data in a structured form. This operation transforms the data or maintains it at locations in the computer's memory system, which may be reconfigured or otherwise altered in a manner well known to those skilled in the art. The data maintains a data structure that is a physical location of the memory that has particular characteristics defined by the data format. However, while the principles of the invention have been described in language specific to above, it is not intended to be limited to the specific form set forth herein, but on the contrary, it is to be understood that various steps and operations described hereinafter may be implemented in hardware.

The principles of the present invention are operational with numerous other general purpose or special purpose computing, communication environments or configurations. Examples of well known computing systems, environments, and configurations that may be suitable for use with the invention include, but are not limited to, hand-held telephones, personal computers, servers, multiprocessor systems, microcomputer-based systems, mainframe-based computers, and distributed computing environments that include any of the above systems or devices.

The terms "first", "second", and "third", etc. in the present invention are used for distinguishing different objects, not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a temperature sensing device according to an embodiment of the present invention.

The temperature sensing device comprises a heat transfer guide plate 1, a heat insulation reflecting cup 2, an outer hollow light pipe 3, an inner hollow light pipe 4, an optical illuminator 5, an optical detector 6, an optical transparent fixing ring 7 and a thermo-optical modulation unit 8, wherein:

the outer hollow light pipe 3 and the inner hollow light pipe 4 are coaxially nested, the inner hollow light pipe 4 is positioned inside the outer hollow light pipe 3, and optical transparent fixing rings 7 are arranged at two ends between the outer hollow light pipe 3 and the inner hollow light pipe 4 to form an incident light transmission channel 9 and a scattered light transmission channel 10;

the incident light output end of the outer hollow light pipe 3 is connected with the heat transfer guide plate 1 through the heat insulation reflection cup 2, and the thermo-optic modulation unit 8 is arranged on the inner side surface of the heat transfer guide plate 1;

the thermo-optic modulation unit 8 is composed of an optical microcavity layer 81 and a nanoparticle layer 82, more specifically, as shown in fig. 2, fig. 2 is a schematic structural diagram of the thermo-optic modulation unit 8, the optical microcavity layer 81 is composed of a visible light reflection layer 811, a thermo-optic thin film layer 812 and a high refractive index layer 813, the visible light reflection layer 811 is connected with the heat transfer guide plate 1, the thermo-optic thin film layer 812 is connected with the visible light reflection layer 811, the high refractive index layer 813 is connected with the thermo-optic thin film layer 812, the nanoparticle layer 82 is located on the surface of the high refractive index layer 813 or inside the thermo-optic thin film layer 812, and the thermo-optic modulation unit 8 is arranged opposite to the inner;

an optical illuminator 5 is arranged at the input end of the incident light of the outer hollow light pipe 3, an optical detector 6 is arranged at the output end of the scattered light of the inner hollow light pipe 4, and the optical illuminator 5 is an annular array light-emitting source.

In some embodiments, the optical microcavity layer 81 is a Fabry-Perot (FP) microcavity or a photonic crystal microcavity.

In some embodiments, the nanoparticle layer 82 is a metal conductive particle or a high optical refractive index dielectric particle, wherein the size of the nanoparticles in the nanoparticle layer 82 is in the range of 20-300nm, and the shape of the nanoparticles may be spherical, disk-shaped, circular or other shapes.

In some embodiments, the metal conductive particles are Au, Al, Ag or Ni, and the dielectric particles are Si, Ge, TiO₂Or Al₂O₃。

In some embodiments, the thermo-optic film layer 812 is made of optically clear Polydimethylsiloxane (PDMS), Si, or other thermo-optic material with an absolute value of not less than 1 × 10^-4K^-1Wherein PDMS has a high linear negative thermo-optical coefficient, which is as high as-4.5 x 10^-4K^-1Other optional materials for thermo-optic films are silicon (1.8X 10)^-4K^-1)。

Fig. 3 shows backscattering intensity spectra of the constructed thermo-optic modulation unit 8 at different temperatures at an incident angle of θ ═ 70 ° with a PDMS thickness of 2 μm. It can be seen from the results in the graph that the resonance scattering spectrum shifts when the temperature range is changed from 0 ℃ to 150 ℃, the shift amount of which increases with increasing wavelength.

In some embodiments, the optical illuminator 5 is constituted by an LED or a semiconductor laser light source, and specifically, may be constituted by a plurality of LEDs in an annular array and disposed around the incident light input end of the incident light transmission channel 9, or constituted by a plurality of semiconductor laser light sources in an annular array and disposed around the incident light input end of the incident light transmission channel 9.

The optical radiation emitted by the optical illuminator 5 enters the incident light transmission channel 9 through coupling, is reflected by the heat insulation reflection cup 2 and then irradiates the nanoparticle layer 82 on the surface of the heat transfer guide plate 1 at a large angle (more than 45 degrees), so as to generate resonant back scattering light. The scattered light is collected by the scattered light transmission channel 10 and transmitted to the optical detector 6 to be detected.

In some embodiments, the heat-insulating reflecting cup 2 is made of a low thermal conductivity glass material, and the inner wall of the heat-insulating reflecting cup 2 is plated with an optical reflecting film.

In some embodiments, the substrate of the inner hollow light pipe 4 and the substrate of the outer hollow light pipe 3 are both glass, and the inner wall of the inner hollow light pipe 4 and the inner wall of the outer hollow light pipe 3 are both coated with optical reflective films.

In some embodiments, the optical detector 6 is a unit photodetector or an area array detector, the unit photodetector is a silicon photodiode, a silicon photocell, or a germanium diode, and the area array detector is a CCD or CMOS image sensor.

The structure shown in fig. 1 is symmetrical to the left and right.

The basic working principle of the temperature sensing device is as follows: when the heat transfer guide plate 1 comes into contact with an object to be measured (i.e., an object whose temperature needs to be measured), heat is transferred to the thermo-optical modulation unit 8, causing the temperature of the modulation unit to rise. The change in temperature causes a change in the refractive index of the thermo-optic thin film layer 812 in the optical microcavity layer 81. Thereby causing a shift in the resonance spectrum of the optical microcavity layer 81, e.g., a shift in the resonance peak wavelength from λ before the temperature rise₀Offset to λ after temperature rise₀±Δλ₀. When the optical radiation emitted by the optical illuminator 5 is transmitted to the outlet thereof through the incident light transmission channel 9, and then reflected by the heat-insulating reflection cup 2 to irradiate the thermal light modulation unit 8 at a large angle, resonant backscattered light is excited in the coupled system consisting of the optical microcavity layer 81 and the nanoparticle layer 82. The back scattered light is collected at an angle into the scattered light transmission channel 10 and transmitted to the other end to be received by the optical detector 6, while the reflected light cannot be collected into the scattered light transmission channel 10 because of the large-angle specular reflection, so that the optical detector 6 obtains a scattered light intensity signal mainly. Thermo-optic modulation of resonance peak wavelength of scattering spectraWhen the temperature of the unit 8 changes, a certain degree of deviation is generated, and the optical detector 6 detects the light intensity change of a fixed wavelength in the scattering spectrum before and after the deviation, so that the information of the temperature change can be obtained. Under the appropriate structure parameters of the optical microcavity layer 81 and the nanoparticle layer 82, scattering peaks of different orders can exist simultaneously in the optical band. Generally, the scattering peak of long wave has larger bandwidth and higher temperature sensitivity, and the scattering peak of short wave has smaller bandwidth and smaller temperature sensitivity. The bandwidth is large, the range of the measured temperature is large, but the variation of the light intensity is slightly low when the temperature changes; the bandwidth is small, and the variation of the light intensity is large when the temperature changes. Therefore, different orders (wavelengths) of the scattering modes can be selectively detected according to the sensitivity requirement, and the temperature measuring device is suitable for different temperature measuring ranges and accuracy requirements.

In some embodiments, and more particularly where the optical microcavity layer 81 is an FP microcavity, when optical radiation is incident on the optical microcavity layer 81, multi-beam interference of reflected waves is generated in the FP microcavity, forming a cavity mode. The wavelength λ and bandwidth Δ λ for the cavity modes are determined by the cavity layer thickness d (here, the thickness of the thermo-optic film layer 812) and the reflectivity of the cavity walls. When the nanoparticle layer 82 is present on the surface of the optical microcavity layer 81, the mode satisfying the formula (1) is a coupled resonance mode excited by a cavity mode and a nanoparticle. The coupled resonant film can be scattered to a far field by the nano-particles.

Where k represents the FP cavity mode order, λ represents the resonant wavelength, n represents the refractive index of the thermo-optic film layer 812, Φ_MAn additional phase shift is introduced for the metal particles and the optically reflective layer, which phase shift results in an elongation of the penetration depth of the electromagnetic wave to a distance Δ d outside the thickness of the cavity layer.

In this embodiment, a relative temperature sensitivity parameter is defined

Wherein W_kRepresenting the amount of wavelength shift in unit temperature representing the number k of modes, i.e. the temperature sensitivity, Δ λ_kRepresenting the corresponding line width versus sensitivity parameter at that mode. R_TThe sensitivity, R, of the change in light intensity of the microcavity scattering spectrum as the ambient temperature changes can be characterized_TThe larger the relative change in the intensity of the scattered light at the resonance wavelength of the corresponding mode in a certain temperature change range. For each FP cavity mode, a corresponding temperature variation range Δ T ═ λ can also be calculated_k-λ_k+1)/W_k. The relative temperature sensitivity parameters R at different resonance wavelengths in FIG. 3 were calculated by linear fitting of the temperature and resonance wavelength_TAnd a measurable temperature range Δ T, the results are shown in table 1.

TABLE 1

Different FP cavity modes show different characteristics when facing temperature changes, the temperature sensitivity of the mode 6 in the table 1 is the highest, and the temperature measurement range is the widest, which indicates that the mode can be used for detecting high-temperature infrared objects; the highest relative temperature sensitivity of mode 10 indicates that this mode can be used to achieve infrared object detection with a relatively high temperature resolution requirement and a relatively narrow temperature range. Therefore, in practical use, according to the requirements of different temperature resolutions and temperature ranges, the proper resonance scattering wavelength and bandwidth can be selected for measurement.

Compared with the prior art, the temperature sensing device has the following effects and benefits:

(1) for the interference type optical fiber temperature sensor, the measurement precision is low. The thermoelectric temperature sensor is widely applied to industrial production, but the requirement on the stability of the temperature of a reference end is high, so that the measurement accuracy is limited. For the thermal resistance sensor, the stability is strong, the accuracy is good, but the temperature instantaneous change can not be measured, and the temperature measurement range is limited. Compared with the traditional temperature sensors, the device provided by the invention can flexibly meet the requirements of wide temperature measurement range and high resolution.

(2) The optical fiber temperature sensor based on the Fabry-Perot reflected wave interference principle is a new type of temperature sensor which is developed recently, but the manufacturing process is complex, the optical fiber temperature sensor is easily influenced by the noise of ambient light and a broadband light source, and the temperature sensitivity is limited. Compared with the temperature sensor, the dark field scattered light is adopted for reading, so that the device has lower noise and higher sensitivity;

(3) furthermore, it has a lower manufacturing cost than a mechanical optical readout system.

In order to better implement the temperature sensing device provided by the embodiment of the invention, the embodiment of the invention also provides a temperature measuring method based on the temperature sensing device.

Referring to fig. 4, fig. 4 is a schematic flow chart illustrating a temperature measuring method according to an embodiment of the invention. The execution subject of the temperature measuring method can be the temperature sensing device provided by the embodiment of the invention. By adopting a coupling system of an optical microcavity containing a thermo-optic material and nanoparticles in the large-angle inclined optical illumination temperature sensing device, the relation of scattered light intensity along with temperature change is obtained, temperature measurement is carried out, and a method which is lower in read noise and more sensitive in detection compared with the traditional temperature sensor is realized. Unless otherwise specified, the terms "optical" and "optical radiation" in the present invention refer specifically to electromagnetic bands covering the visible and near infrared bands (400-2500 nm). The temperature measurement method may include:

s1, contacting the target to be measured through the heat transfer guide plate of the temperature sensing device, and causing the refractive index of the thermo-optic film layer in the optical microcavity layer to change due to the temperature change, so that the resonance spectrum of the optical microcavity layer shifts.

In this embodiment, before the heat transfer guide plate of the temperature sensing device contacts the target to be measured, a temperature sensing device needs to be constructed first, and particularly, a thermo-optic modulation unit in the temperature sensing device needs to be constructed, where the thermo-optic modulation unit is composed of an optical microcavity layer and a nanoparticle layer, and the optical microcavity layer is composed of a visible light reflection layer, a thermo-optic thin film layer, and a high refractive index layer.

The thermo-optic material of the thermo-optic thin film layer in the optical microcavity layer is a material with refractive index changing along with temperature, and the parameter for representing the thermo-optic characteristic is thermo-optic coefficient. In the optical band, the common thermo-optical materials include inorganic material silicon and organic material PDMS, which have a relatively high thermo-optical coefficient, which can reach 10^-4K^-1Magnitude. The optical microcavity including the thermo-optic film also has a shift in the resonance peak wavelength to some extent when the temperature changes. Generally, the larger the thermo-optic coefficient, the larger the shift in the resonance peak wavelength.

And S2, irradiating the thermal light modulation unit at a large angle through the optical illuminator of the temperature sensing device, wherein the backscattering spectrum of the nanoparticles of the nanoparticle layer in the optical microcavity layer shifts when the temperature changes, and the shifted backscattering light is generated.

In the present embodiment, specifically, the optical illuminator irradiates the thermo-optical modulation unit through the incident light transmission channel.

For a reflective optical microcavity layer, when the surface has nanoparticles, there is a scattering spectrum in addition to specular reflection if the surface is illuminated with optical radiation at a large angle. The scattering spectrum of a nanoparticle contains a series of scattering resonance modes, which generally have a relatively large bandwidth. When the nano-particles are coupled with the micro-cavity, the scattering spectrum of the nano-particles has a hybrid mode containing the composite characteristics of cavity modes and particle scattering resonant modes, and is characterized by narrower bandwidth and higher scattering light intensity than a pure particle resonant mode. In addition, the resonance wavelength and the bandwidth thereof corresponding to the cavity mode can be adjusted within a certain range by changing the structural parameters of the microcavity. Therefore, the structural parameters of the microcavity can be selected according to the requirement to obtain a specific resonance wavelength and a proper bandwidth. On the other hand, the higher order mode in the hybrid mode has a narrower bandwidth than the lower order mode, so selecting the appropriate mode order is also a method for obtaining the appropriate bandwidth.

When the refractive index of the thermo-optic film layer changes with temperature, the optical scattering spectrum of particles in the coupling system shifts, and the intensity of specific scattered light wavelength increases or decreases.

And S3, collecting the back scattering light, and measuring the target scattering light intensity of the target wavelength in the back scattering light through an optical detector in the temperature sensing device.

In this embodiment, the scattered light transmission channel in the temperature sensing device is used to collect the back scattered light, and specifically, the optical fiber or the glass light guide tube is used to collect the back scattered light at a certain angle. And measuring the target scattering light intensity of a target wavelength in the scattering spectrum by adopting an optical detector in a unit or area array form, wherein the target wavelength is the wavelength required to be measured.

And S4, determining the target electric signal amplitude corresponding to the target scattered light intensity.

In this embodiment, after the scattering light intensity of the target is determined, the target electrical signal amplitude corresponding to the scattering light intensity of the target also needs to be determined.

Before the temperature sensing device is used for measuring the temperature, the corresponding relationship between the electrical signal amplitude corresponding to the target wavelength and the temperature needs to be determined, specifically, on the premise that the temperature of the target to be measured is known, the target electrical signal amplitude corresponding to the target wavelength of the target to be measured at this time is measured, the corresponding relationship between the electrical signal amplitude and the temperature at the temperature is obtained, the target electrical signal amplitudes corresponding to the target wavelengths of the target to be measured at different temperatures are respectively measured, the electrical signal amplitude generated by the light intensity at the same wavelength at different temperatures is obtained, and the corresponding relationship between the electrical signal amplitude and the temperature is obtained.

S5, determining the temperature of the target to be measured according to the corresponding relation between the electric signal amplitude corresponding to the target wavelength and the temperature and the target electric signal amplitude.

When the corresponding relation between the electric signal amplitude corresponding to the target wavelength and the temperature and the target electric signal amplitude corresponding to the target to be detected are determined, the temperature of the target to be detected can be determined at the moment.

In this embodiment, after the heat transfer guide plate in the temperature sensing device is in contact with the target to be measured, the optical illuminator irradiates the thermo-optic modulation unit through the incident light transmission channel located inside the temperature sensing device, the thermo-optic modulation unit reflects the incident light to generate back scattered light, the back scattered light is transmitted to the optical detector through the scattered light transmission channel located inside the temperature sensing device, and finally the temperature of the target to be measured is determined according to the obtained back scattered light. The present embodiment employs dark field scattered light readout with lower noise and higher sensitivity than conventional bright field reflected light readout.

In order to better implement the temperature measurement method provided by the embodiment of the invention, the embodiment of the invention also provides a device based on the temperature measurement method. Wherein the terms are the same as in the above temperature measuring method, and the details of the implementation can be referred to the description in the method embodiment.

Referring to fig. 5, fig. 5 is a schematic structural diagram of a temperature measuring device according to an embodiment of the present invention, wherein the temperature measuring device 500 may include a contact unit 501, an irradiation unit 502, a processing unit 503, a first determining unit 504, a second determining unit 505, and the like. Wherein:

the contact unit 501 is used for contacting a target to be detected through a heat transfer guide plate of the temperature sensing device, and the change of the temperature causes the change of the refractive index of a thermo-optic film layer in the optical microcavity layer, so that the shift of the resonance spectrum of the optical microcavity layer is caused;

an irradiation unit 502, configured to irradiate the thermo-optic modulation unit at a large angle through an optical illuminator of the temperature sensing device, where a backscattering spectrum of nanoparticles of a nanoparticle layer in the optical microcavity layer shifts when the temperature changes, and generates shifted backscattering light;

a processing unit 503, configured to collect the backscattered light, and measure a target scattered light intensity of a target wavelength in the backscattered light through an optical detector in the temperature sensing device;

a first determining unit 504, configured to determine a target electrical signal amplitude corresponding to the target scattered light intensity;

a second determining unit 505, configured to determine the temperature of the target to be measured according to a corresponding relationship between the electrical signal amplitude corresponding to the target wavelength and the temperature and the target electrical signal amplitude.

The above operations can be implemented in the foregoing embodiments, and are not described in detail herein.

In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed description of the temperature measurement method, and are not described herein again.

It will be understood by those skilled in the art that all or part of the steps of the methods of the above embodiments may be performed by instructions or by associated hardware controlled by the instructions, which may be stored in a computer readable storage medium and loaded and executed by a processor.

To this end, embodiments of the present invention provide a computer-readable storage medium, in which a plurality of instructions are stored, and the instructions can be loaded by a processor to execute steps of any one of the temperature measurement methods provided by the embodiments of the present invention. For example, the instructions may perform the steps of:

Wherein the computer-readable storage medium may include: read Only Memory (ROM), Random Access Memory (RAM), magnetic or optical disks, and the like.

Since the instructions stored in the computer-readable storage medium can execute the steps in any temperature measurement method provided by the embodiment of the present invention, the beneficial effects that can be achieved by any temperature measurement method provided by the embodiment of the present invention can be achieved, which are detailed in the foregoing embodiments and will not be described again here.

The temperature sensing device and the temperature measuring method provided by the embodiment of the invention are described in detail, and the principle and the implementation mode of the invention are explained by applying specific examples, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims

1. A temperature sensing device, comprising a heat transfer guide plate, a heat insulating reflector cup, an outer hollow light pipe, an inner hollow light pipe, an optical illuminator, an optical detector, an optically transparent fixing ring, and a thermo-optic modulation unit, wherein:

2. The apparatus of claim 1, wherein the optical microcavity layer is an FP microcavity or a photonic crystal microcavity.

3. The apparatus of claim 1, wherein the nanoparticle layer is a metal conductive particle or a high optical refractive index dielectric particle.

4. The device of claim 3, wherein the metal conductive particles are Au, Al, Ag or Ni, and the dielectric particles are Si, Ge, TiO₂Or Al₂O₃。

5. The device of claim 1, wherein the thermo-optic film layer is comprised of optically clear polydimethylsiloxane or Si.

6. The device according to claim 1, characterized in that the optical illuminator is constituted by an LED or by a semiconductor laser light source.

7. The apparatus according to claim 1, wherein the heat-insulating reflective cup is made of low thermal conductivity glass material, and an inner wall of the heat-insulating reflective cup is coated with an optical reflective film.

8. The device according to any one of claims 1 to 7, wherein the substrate of the inner hollow light pipe and the substrate of the outer hollow light pipe are both glass, and the inner wall of the inner hollow light pipe and the inner wall of the outer hollow light pipe are both coated with an optical reflection film.

9. The device according to any one of claims 1 to 7, wherein the optical detector is a unit photodetector or an area array detector, the unit photodetector is a silicon photodiode, a silicon photocell or a germanium diode, and the area array detector is a CCD or CMOS image sensor.

10. A temperature measuring method applied to the temperature sensing device according to any one of claims 1 to 9, comprising: