CN112456430A - Integrated multifunctional micro-electromechanical sensor - Google Patents
Integrated multifunctional micro-electromechanical sensor Download PDFInfo
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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Abstract
The invention discloses an integrated multifunctional micro-electromechanical sensor, which is characterized in that a signal acquisition circuit and an analog-to-digital conversion circuit are respectively integrated on different multi-channel signal acquisition electronic wafers and analog-to-digital conversion electronic wafers, the multi-channel signal acquisition electronic wafers are designed and arranged on the analog-to-digital conversion electronic wafers, and a plurality of micro-electromechanical sensing elements are arranged on the multi-channel signal acquisition electronic wafers, so that the compact integrated layout design of the structures of the sensing elements, the acquisition circuit and the analog-to-digital conversion circuit is realized, the transverse layout area is reduced, and the miniaturization of a multifunctional micro-electromechanical sensor product is facilitated; meanwhile, the structure of the multi-channel signal acquisition electronic wafer can be further optimized, the problem of signal mutual interference among different channels is reduced, and the working stability of the integrated multifunctional micro-electromechanical sensor product is improved. Therefore, the integrated multifunctional micro-electromechanical sensor solution has good market application prospect.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical sensors and industrial Internet of things, in particular to an integrated multifunctional micro-electromechanical sensor.
Background
Micro-Electro-Mechanical systems (MEMS), also called Micro-electromechanical systems, microsystems, micromachines, etc., are Micro devices or systems that integrate Micro sensors, Micro actuators, micromechanical structures, Micro power sources, Micro energy sources, signal processing and control circuits, high performance electronic integrated devices, interfaces, and communications. The MEMS focuses on ultra-precision machining, and common products include MEMS microphones, micro motors, micro pumps, micro vibrators, MEMS sensors, and other MEMS integrated products.
A micro-electromechanical sensor (MEMS sensor) refers to a device and a system which are micro-machined by micro-electronics and sense a converted electrical signal by a sensitive element such as a capacitor, a piezo-resistor, a thermocouple, a resonator, a tunnel current, etc. The main MEMS sensors include various sensors such as speed, pressure, humidity, temperature, acceleration, gas, magnetism, light, sound, biology, chemistry, etc., and are widely used in the fields of information communication, biochemistry, medical treatment, automatic control, consumer electronics, etc.
In the application of the industrial internet of things, in order to monitor the working state of industrial equipment and further monitor the equipment of the internet of things, the relevant information of the working state of the equipment, such as vibration, sound, temperature and the like, is often tracked and monitored, and a micro-electromechanical sensor is particularly needed to monitor the information on some micro-miniature high-precision industrial equipment. However, the MEMS sensor products on the market at present are generally single-function sensors, and if the device needs to be monitored for multi-dimensional information such as vibration, sound, temperature, etc., a plurality of MEMS sensors need to be used, which not only makes the installation and wiring arrangement of the monitoring circuit complicated, but also may affect the accurate performance of the industrial device due to the installation of more additional sensors and other devices. Therefore, in the application of monitoring the working state of industrial equipment, the demand for a multifunctional micro-electromechanical sensor capable of realizing multi-azimuth information sensing detection is provided.
The existing single-function MEMS sensor has a process structure inside a package structure, which mainly includes a micro-electromechanical sensor element for performing signal sensing and acquisition, a signal acquisition circuit (analog circuit portion) for performing preprocessing such as signal acquisition control and filtering, and an analog-to-digital conversion circuit (digital circuit portion) for performing digital signal conversion, where the signal acquisition circuit and the analog-to-digital conversion circuit are usually integrated on an electronic wafer, and the micro-electromechanical sensor element is disposed on the electronic wafer and forms data transmission connection through a conductive contact. If the existing structural process is used, a plurality of MEMS sensor internal process structures with different functions are simply integrated and arranged in one package to form a multifunctional MEMS sensor, namely, a plurality of electronic wafers with MEMS sensing elements arranged are integrated and arranged in the same package structure, so that the volume of the MEMS sensor is increased by times, the internal circuit is complicated, and the problems of signal mutual interference factors among different MEMS sensing elements, the compatibility of acquisition control of different sensing signals and the like are difficult to be determined and ensured.
Therefore, how to design a multifunctional micro-electromechanical sensor product which is more beneficial to miniaturization and has better working stability is beginning to be valued in the technical field of industrial internet of things.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: the integrated multifunctional micro-electromechanical sensor not only can realize sensing detection of various information, but also is more favorable for realizing miniaturization of the structure and improving the working stability.
In order to solve the technical problems, the invention adopts the following technical scheme:
an integrated multifunctional micro-electromechanical sensor comprises a packaging structure, an analog-to-digital conversion electronic wafer, a multi-channel signal acquisition electronic wafer and a plurality of micro-electromechanical sensing elements, wherein the analog-to-digital conversion electronic wafer, the multi-channel signal acquisition electronic wafer and the plurality of micro-electromechanical sensing elements are arranged in the packaging structure;
an analog-to-digital conversion circuit with a plurality of analog signal input ports is formed on the analog-to-digital conversion electronic wafer;
the multichannel signal acquisition electronic wafer is arranged on the analog-to-digital conversion electronic wafer, a plurality of channels of signal acquisition circuits are formed on the multichannel signal acquisition electronic wafer, and the signal output ends of the signal acquisition circuits of different channels are electrically connected with different analog signal input ports on the analog-to-digital conversion electronic wafer through conductive terminals respectively;
the plurality of micro-electromechanical sensing elements are arranged on the multi-channel signal acquisition electronic wafer, and the acquisition signal output ends of the micro-electromechanical sensing elements are electrically connected with the signal input ends of the signal acquisition circuits of different channels on the multi-channel signal acquisition electronic wafer through the conductive terminals respectively.
In the above integrated multifunctional mems, preferably, the multi-channel signal acquisition electronic wafer is formed by integrating a signal acquisition integrated circuit having multiple channels on a single wafer.
In the above-mentioned integrated multifunctional mems, as a preferred embodiment, the multi-channel signal collecting electronic wafer is formed by combining a plurality of single-channel signal collecting electronic wafer modules, and a single-channel signal collecting circuit is formed on each single-channel signal collecting electronic wafer module; and each micro-electromechanical sensing element is respectively arranged on different single-channel signal acquisition electronic wafer modules.
In the above integrated multifunctional mems, as a preferred embodiment, each of the single-channel signal collection electronic wafer modules is arranged in parallel or in an array, and is tiled on an analog-to-digital conversion electronic wafer.
In the integrated multifunctional micro-electromechanical sensor, as a preferred scheme, the single-channel signal acquisition electronic wafer modules are electrically isolated from each other; preferably, each single-channel signal acquisition electronic wafer module is electrically isolated through interval arrangement, or is connected through an insulating material and electrically isolated.
In the above integrated multifunctional mems, as a preferred embodiment, each of the single-channel signal collection electronic wafer modules is stacked on an analog-to-digital conversion electronic wafer.
In the integrated multifunctional micro-electromechanical sensor, as a preferred scheme, in each of the single-channel signal acquisition electronic wafer modules arranged in a stacked manner, the conductive terminal electrically connected with the analog-to-digital conversion electronic wafer and positioned above the single-channel signal acquisition electronic wafer module bypasses the single-channel signal acquisition electronic wafer module positioned below the single-channel signal acquisition electronic wafer module; or the conductive terminal electrically connected with the analog-to-digital conversion electronic wafer and positioned above the single-channel signal acquisition electronic wafer module penetrates through the single-channel signal acquisition electronic wafer module positioned below the single-channel signal acquisition electronic wafer module, and the conductive terminal and a circuit on the single-channel signal acquisition electronic wafer module penetrating through the conductive terminal are mutually and electrically isolated.
In the above-mentioned integrated multifunctional micro-electromechanical sensor, as a preferred scheme, the end sides of the single-channel signal collecting electronic wafer modules arranged in a stacked manner are fixedly connected by a vertically-arranged insulating connecting plate.
In the above integrated multifunctional micro-electromechanical sensor, as a preferred scheme, an electromagnetic shielding material layer is further disposed on the insulating connecting plate; preferably, the electromagnetic shielding material layer is clamped in the insulating connecting plate, or laid on a side surface of the insulating connecting plate, which faces away from the single-channel signal acquisition electronic wafer module.
In the above integrated multifunctional micro-electromechanical sensor, as a preferred scheme, the micro-electromechanical sensing element includes a vibration sensing element, a sound sensing element and a temperature sensing element; the vibration sensing element, the sound sensing element and the temperature sensing element are all prepared by adopting an MEMS process and are bonded on the multi-channel signal acquisition electronic wafer, and each micro-electromechanical sensing element is electrically connected with the signal input end of a signal acquisition circuit of one channel on the multi-channel signal acquisition electronic wafer.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the integrated multifunctional micro-electromechanical sensor, the signal acquisition circuit and the analog-to-digital conversion circuit are respectively integrated on the different multi-channel signal acquisition electronic wafer and the different analog-to-digital conversion electronic wafer, the multi-channel signal acquisition electronic wafer is designed and arranged on the analog-to-digital conversion electronic wafer, the stacking design of the acquisition circuit and the analog-to-digital conversion circuit is realized, the transverse arrangement area is reduced, meanwhile, a plurality of micro-electromechanical sensing elements are arranged on the multi-channel signal acquisition electronic wafer, on the basis of the sensing and detecting capability of various information, the compact integrated layout design of the structures of the sensing elements, the acquisition circuit and the analog-to-digital conversion circuit is realized, and the miniaturization of the multifunctional micro-electromechanical sensor product is favorably realized.
2. The integrated multifunctional micro-electromechanical sensor can further optimize the signal acquisition of a plurality of paths of micro-electromechanical sensing elements on the aspects of compatibility and processing performance by optimally designing the structure of a multi-channel signal acquisition electronic wafer, reduce the problem of signal mutual interference among different channels and improve the working stability of the integrated multifunctional micro-electromechanical sensor product.
3. The packaging structure, the analog-digital conversion electronic wafer, the multi-channel signal acquisition electronic wafer and the plurality of micro-electromechanical sensing elements in the integrated multifunctional micro-electromechanical sensor can be processed and prepared by adopting the related design process technology of the existing MEMS sensor product, and the popularization and implementation of the technology are facilitated.
4. The integrated multifunctional micro-electromechanical sensor solution can better meet the requirements on miniaturization and working stability of multifunctional micro-electromechanical sensor products in industrial Internet of things application, and has good market application prospect.
Drawings
FIG. 1 is a schematic cross-sectional view of an integrated multifunctional MEMS sensor according to one embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of another embodiment of the integrated multifunctional MEMS sensor of the present invention.
Fig. 3 is a schematic top view of a tiled arrangement of a plurality of single-channel signal acquisition electronic wafer modules on an analog-to-digital conversion electronic wafer in the integrated multifunctional mems according to the present invention.
Fig. 4 is a schematic top view of a plurality of single-channel signal acquisition electronic wafer modules in an integrated multifunctional mems according to another tiling arrangement on an analog-to-digital conversion electronic wafer.
FIG. 5 is a schematic cross-sectional view of another embodiment of the integrated multifunctional MEMS sensor of the present invention.
Fig. 6 is a schematic perspective view of an internal arrangement structure of an integrated multifunctional micro-electromechanical sensor according to a scheme of a stacked design.
Fig. 7 is a schematic structural cross-sectional view of another embodiment of the internal layout structure of the integrated multifunctional mems according to the present invention, which is designed in a stacked manner.
Figure 8 is a schematic perspective view of the internal layout of the integrated multifunctional mems of the present invention in the stacked design of figure 7.
The reference numbers in the figures are:
10-a packaging structure; 20-analog-to-digital conversion of the electronic wafer; 30-acquiring an electronic wafer by using a multi-channel signal; 31-single channel signal acquisition electronic wafer module; 40-a microelectromechanical sensing element; 50-an insulating material; 60-an insulating connecting plate; 61-a layer of electromagnetic shielding material; 70-conductive terminal.
Detailed Description
In order to solve the problems of miniaturization, working stability and the like of the multifunctional micro-electromechanical sensor, the application provides an integrated multifunctional micro-electromechanical sensor.
As shown in fig. 1, the integrated multifunctional mems sensor of the present invention includes a package structure 10, and an analog-to-digital conversion electronic wafer 20, a multi-channel signal acquisition electronic wafer 30 and a plurality of mems sensing elements 40 disposed in the package structure, wherein each of the mems sensing elements 40 is configured to sense a different device status monitoring signal; an analog-to-digital conversion circuit having a plurality of analog signal input ports is formed on the analog-to-digital conversion electronic wafer 20, and is used for performing analog-to-digital conversion processing on the analog signals from the signal input ports, and of course, necessary operation control circuits, data transmission interface circuits, and the like may be integrated on the analog-to-digital conversion electronic wafer 20, so as to implement necessary functions such as operation control of circuit operation and external transmission control of the processed signals; the multi-channel signal acquisition electronic wafer 30 is arranged on the analog-to-digital conversion electronic wafer, a plurality of channels of signal acquisition circuits are formed on the multi-channel signal acquisition electronic wafer 30, and the signal output ends of the signal acquisition circuits of different channels are electrically connected with different analog signal input ports on the analog-to-digital conversion electronic wafer 20 through conductive terminals respectively; the plurality of micro-electromechanical sensing elements 40 are arranged on the multi-channel signal acquisition electronic wafer 30, and the signal acquisition output ends of the micro-electromechanical sensing elements 40 are electrically connected with the signal input ends of the signal acquisition circuits of different channels on the multi-channel signal acquisition electronic wafer 30 through conductive terminals respectively.
According to the integrated multifunctional micro-electromechanical sensor, the signal acquisition circuit and the analog-to-digital conversion circuit are respectively integrated on different electronic wafers to respectively form an independent multi-channel signal acquisition electronic wafer and an analog-to-digital conversion electronic wafer, and the multi-channel signal acquisition electronic wafer is designed and arranged on the analog-to-digital conversion electronic wafer in structural arrangement, so that the stacked design of the acquisition circuit and the analog-to-digital conversion circuit is realized, and the transverse arrangement area occupied by the acquisition circuit and the analog-to-digital conversion circuit is reduced; meanwhile, a multi-channel signal acquisition electronic wafer is provided with a signal acquisition circuit with a plurality of channels, and a plurality of micro-electromechanical sensing elements are designed and arranged on the multi-channel signal acquisition electronic wafer, so that on one hand, the compact integrated layout of the circuit structures of the sensing elements, the acquisition circuit and the analog-to-digital conversion circuit is further realized, on the other hand, the acquisition signal output ends of the micro-electromechanical sensing elements are also designed to be respectively and electrically connected with the signal input ends of the signal acquisition circuits with different channels on the multi-channel signal acquisition electronic wafer through conductive terminals, so that the micro-electromechanical sensing elements can respectively carry out shunt acquisition of sensing signals through different signal acquisition circuit channels and then are respectively transmitted to the analog-to-digital conversion circuit on the analog-to-digital conversion electronic wafer for analog-to-digital conversion processing, and processed digital signals are output through the output signal ports of the analog-to-digital, therefore, the method has the integration capability of realizing multi-azimuth information sensing detection. Therefore, the integrated multifunctional micro-electromechanical sensor design of the invention realizes the compact integrated layout design of the sensing element, the acquisition circuit and the analog-to-digital conversion circuit structure on the basis of the sensing detection capability of various information, and is beneficial to realizing the miniaturization of the multifunctional micro-electromechanical sensor product.
In the concrete technology implementation, the electronic wafer circuit integration technology used in the existing MEMS sensor product can be adopted to manufacture a multi-channel signal acquisition electronic wafer and an analog-to-digital conversion electronic wafer, and only the acquisition circuit and the analog-to-digital conversion circuit need to be respectively integrated on different electronic wafers, and the matching relation between the wafer area and the layout structure is considered; the micro-electromechanical sensing element can also be various MEMS sensing devices used in the existing MEMS sensor products, such as speed, pressure, humidity, temperature, acceleration, gas, magnetism, light, sound, biology, chemistry and the like; in consideration of high integration of the structure, the number of the micro-electromechanical sensing elements in the integrated multifunctional micro-electromechanical sensor is preferably corresponding to the number of signal acquisition channels on a multi-channel signal acquisition electronic wafer, for example, two micro-electromechanical sensing elements are needed, two channels of signal acquisition circuits are correspondingly used on the multi-channel signal acquisition electronic wafer, five micro-electromechanical sensing elements are needed, five channels of signal acquisition circuits are correspondingly used on the multi-channel signal acquisition electronic wafer, and the problems that the signal acquisition circuits are more than the micro-electromechanical sensing elements and the like to cause circuit structure space waste and to cause adverse effects on product structure integration and miniaturization are avoided; the packaging structure can also adopt the existing packaging process. That is to say, the packaging structure, the analog-to-digital conversion electronic wafer, the multi-channel signal acquisition electronic wafer and the plurality of micro-electromechanical sensing elements in the integrated multifunctional micro-electromechanical sensor can be processed and prepared by adopting the related design process technology of the existing MEMS sensor product, and the popularization and implementation of the technology are facilitated.
For the detailed structure design of the integrated multifunctional micro-electromechanical sensor, a plurality of different design schemes can be provided.
For example, in the structural design of a multi-channel signal acquisition electronic wafer, the signal acquisition circuits of multiple channels can be manufactured by integrating signal acquisition integrated circuits with multiple channels on a single wafer, and the design of a single wafer integrated circuit has the advantages of high integration level and high utilization rate of circuit electronic devices.
Correspondingly, however, the multi-channel signal acquisition electronic wafer adopting the integrated circuit design also has some defects in practical application, and particularly in a use scene aiming at the application field of the industrial internet of things, information monitoring with a plurality of information acquisition dimensions and large acquisition frequency difference may be required, for example, a sound signal with relatively high frequency, a vibration signal with relatively low frequency, and a temperature signal may be acquired once in even tens of seconds, while the signal acquisition integrated circuit with multiple channels of the integrated circuit design may be difficult to achieve the optimum compatibility and processing performance for the multi-channel acquisition of different information monitoring with large information acquisition dimension and large acquisition frequency difference due to the use of a common acquisition clock signal, and even problems of signal acquisition mutual interference among different channels and the like may occur. Therefore, the design scheme of the multi-channel signal acquisition electronic wafer for integrating the signal acquisition integrated circuit with multiple channels on a single wafer is not an optimal solution.
Therefore, in consideration of the use scenario in the application field of the industrial internet of things, as shown in fig. 2, the more preferable structural design of the multi-channel signal acquisition electronic wafer in the integrated multifunctional micro-electromechanical sensor of the present invention is a design scheme of forming the multi-channel signal acquisition electronic wafer by combining a plurality of single-channel signal acquisition electronic wafer modules 31, and a single-channel signal acquisition circuit is separately integrated on each single-channel signal acquisition electronic wafer module 31 to perform a processing task of signal acquisition; meanwhile, a plurality of micro-electromechanical sensing elements 40 in the integrated multifunctional micro-electromechanical sensor can be respectively arranged on different single-channel signal acquisition electronic wafer modules 31, so that the one-to-one matching structural design of the single micro-electromechanical sensing element and the single-channel signal acquisition electronic wafer module is realized; as a preferred design, the micro-electromechanical sensing element 40 is preferably arranged on the single-channel signal collecting electronic wafer module 31 by bonding through a bonding process, which is beneficial to reducing the vertical combined structural space between the micro-electromechanical sensing element 40 and the single-channel signal collecting electronic wafer module 31.
The design has the advantages that the single-channel signal acquisition circuit integrated on each single-channel signal acquisition electronic wafer module can be designed according to the structure of the targeted signal acquisition circuit of the single microcomputer electric sensing element matched with the single-channel signal acquisition electronic wafer module, the signal acquisition frequency, the amplification filtering performance and the like of the single microcomputer electric sensing element can be independently optimized according to the sensing function of the microcomputer electric sensing element matched with one to one, so that the optimal design on compatibility and processing performance is achieved more easily, and the problem of signal mutual interference among different channels generated by the integrated design of the signal acquisition circuit is reduced.
On the basis of the design scheme, if the layout problem of the internal structure of the integrated multifunctional micro-electromechanical sensor is considered, the structural layout mode of a plurality of single-channel signal acquisition electronic wafer modules in the multi-channel signal acquisition electronic wafer can be arranged according to the overall design shape requirement of the integrated multifunctional micro-electromechanical sensor product; for example, if the integrated multifunctional mems product is designed to have a long strip shape as a whole, as shown in fig. 3, the analog-to-digital conversion electronic wafer 20 may be designed to have a long strip shape, and the single-channel signal collection electronic wafer modules 31 may be tiled and arranged on the analog-to-digital conversion electronic wafer in a parallel arrangement; if the integrated multifunctional micro-electromechanical sensor product is designed in a rectangular (or circular) shape as a whole, as shown in fig. 4, the analog-to-digital conversion electronic wafer 20 may be correspondingly designed in a rectangular (or circular) shape, and the single-channel signal acquisition electronic wafer modules 31 may be tiled on the analog-to-digital conversion electronic wafer 20 in an array arrangement; therefore, the integrated flat compact space design of the integrated multifunctional micro-electromechanical sensor product is facilitated. In addition, considering that mutual interference of signal acquisition processing among different channels is reduced as much as possible, the design of mutual electrical isolation is preferably adopted among the single-channel signal acquisition electronic wafer modules; for example, as shown in fig. 2, the single-channel signal collection electronic wafer modules 31 may be electrically isolated from each other by spacing, but such a design considers that each single-channel signal collection electronic wafer module further has a mems sensing element 40, and the structural support of the mems sensing element by the conductive terminals connecting the single-channel signal collection electronic wafer 31 and the analog-to-digital conversion electronic wafer 20 may lack sufficient protection; as another design manner of electrical isolation, as shown in fig. 5, it may be designed that each single-channel signal acquisition electronic wafer module 31 is connected through an insulating material 50 and is electrically isolated, so that the electrical isolation is ensured, and meanwhile, a plurality of single-channel signal acquisition electronic wafer modules 31 are connected to form a whole, which is more beneficial to the protection and stability of the whole structure inside the integrated multifunctional micro-electromechanical sensor.
In addition, in the design scheme of forming the multi-channel signal acquisition electronic wafer by combining a plurality of single-channel signal acquisition electronic wafer modules, as another structural layout design direction, as shown in fig. 6, the single-channel signal acquisition electronic wafer module 31 may be stacked on the analog-to-digital conversion electronic wafer 20, thus, a one-to-one matching structure of multiple groups of micro-electromechanical sensing elements 40 and single-channel signal acquisition electronic wafer modules 31 (preferably, a bonding process is adopted to bond and arrange a single micro-electromechanical sensing element 40 on one single-channel signal acquisition electronic wafer module 31, which is beneficial to reducing the vertical combined structural space of the micro-electromechanical sensing element 40 and the single-channel signal acquisition electronic wafer module 31) can be arranged above the analog-to-digital conversion electronic wafer 20 in a stacked manner, so that a vertically stacked compact spatial layout structure is realized. As a specific structural design, the conductive terminal 70 electrically connected between the single-channel signal collecting electronic wafer module 31 located above and the analog-to-digital conversion electronic wafer 20 may be designed to bypass the single-channel signal collecting electronic wafer module 31 located below (for example, as shown in fig. 6), or may be designed to pass through the single-channel signal collecting electronic wafer module 31 located below (for example, as shown in fig. 7), where it is naturally necessary to design a conductive terminal 70 electrically connected between the single-channel signal collecting electronic wafer module 31 and the analog-to-digital conversion electronic wafer 20 and electrically isolate the conductive terminal 70 from the circuit on the single-channel signal collecting electronic wafer module 31 passing through; the specific implementation manner of the electrical isolation may be that a terminal via hole is arranged on the single-channel signal acquisition electronic wafer module located below, and a conductive terminal which is electrically connected with the analog-to-digital conversion electronic wafer and located above passes through the terminal via hole in a clearance fit manner, or an insulating material may be further filled in a gap between the conductive terminal and a sidewall of the terminal via hole, so as to fix the conductive terminal in a better structure while achieving the electrical isolation.
Moreover, as a further optimized structural design, in the above-mentioned design manner in which each single-channel signal collecting electronic wafer module adopts a stacked arrangement, as shown in fig. 6, 7 and 8, an insulating material (for example, a chip packaging material, etc.) may be further used to process and form an insulating connecting plate 60 vertically disposed, and the end sides of each single-channel signal collecting electronic wafer module 31 stacked and arranged may be fixedly connected, so that the multiple sets of stacked micro-electromechanical sensing elements 40 and the one-to-one matching structures of the single-channel signal collecting electronic wafer module 31 are fixedly connected through the insulating connecting plate 60 to form an integral structure, and in the specific processing implementation, the insulating connecting plate 60 may be processed and manufactured by using the existing chip packaging process, etc. to realize the fixed connection of each single-channel signal collecting electronic wafer module 31 stacked and arranged, namely, it is equivalent to that the one-to-one matching structure of the stacked multiple groups of micro-electromechanical sensing elements 40 and the single-channel signal acquisition electronic wafer module 31 is pre-packaged once to form an integral component, and then connected and arranged on the analog-to-digital conversion electronic wafer 20; the area and area to which the insulating connection plate 60 is connected may be determined according to actual needs, and may be designed to connect a partial area on the end side of each single-channel signal acquisition electronic wafer module 31 in the stacked arrangement (for example, as shown in fig. 6), or may be designed to connect the entire circumferential area on the end side of each single-channel signal acquisition electronic wafer module 31 in the stacked arrangement (that is, to implement the circumferential side full package connection, for example, as shown in fig. 8). In addition, on the basis, as shown in fig. 7 and 8, an electromagnetic shielding material layer 61 may be further disposed on the insulating connection board 60 to shield electromagnetic interference between the mems sensing device and the signal acquisition circuit and the outside, so as to reduce the problem of signal mutual interference between the signal acquisition circuit and the analog-to-digital conversion electronic wafer; similarly, the area where the electromagnetic shielding material layer 61 is disposed may be a local directional area that needs to be electromagnetically shielded, or may be the entire circumferential area of each single-channel signal acquisition electronic wafer module that is stacked (i.e. equivalent to achieving circumferential omnidirectional electromagnetic shielding; of course, this method is not suitable for the use scenario of the mems sensor that needs to use electromagnetic induction).
The integrated multifunctional micro-electromechanical sensor (for example, the examples shown in fig. 6, 7 and 8) designed by adopting the stacked structure for the internal structure has the following steps:
step 1) obtaining an analog-to-digital conversion electronic wafer with a plurality of analog signal input ports, a plurality of single-channel signal acquisition electronic wafer modules and a plurality of micro-electromechanical sensing elements; the devices can be obtained by pre-processing and preparing or obtained by purchasing in advance;
step 2) bonding and arranging each micro-electromechanical sensing element on a single-channel signal acquisition electronic wafer module by adopting a bonding process, and realizing the electric connection between the signal acquisition output end of the micro-electromechanical sensing element and the signal input end of a signal acquisition circuit on the corresponding single-channel signal acquisition electronic wafer module;
step 3) stacking a plurality of single-channel signal acquisition electronic wafer modules bonded with the micro-electromechanical sensing element, processing the single-channel signal acquisition electronic wafer modules by adopting an insulating material to form a vertically arranged insulating connecting plate, and fixedly connecting the end sides of the stacked single-channel signal acquisition electronic wafer modules to realize the pre-packaging of the single-channel signal acquisition electronic wafer modules;
step 4) bonding and arranging the analog-digital conversion electronic wafer on a packaging substrate by adopting a bonding process, and leading out an output signal port of an analog-digital conversion circuit on the analog-digital conversion electronic wafer from the packaging substrate through a conductive terminal;
step 5) arranging a plurality of single-channel signal acquisition electronic wafer modules which are pre-packaged and stacked above the analog-to-digital conversion electronic wafer, and electrically connecting the acquisition signal output ends of the signal acquisition circuits on the single-channel signal acquisition electronic wafer modules to different signal input ports of the analog-to-digital conversion circuit on the analog-to-digital conversion electronic wafer respectively through conductive terminals;
and 6) covering and packaging the packaging upper cover on the packaging substrate through a packaging process to form a packaging structure, so that a packaging space for the micro-electromechanical sensor, the single-channel signal acquisition electronic wafer module and the analog-to-digital conversion electronic wafer is formed between the packaging substrate and the packaging upper cover, packaging is completed, and the integrated multifunctional micro-electromechanical sensor is formed.
In the above manufacturing process, if electromagnetic interference between the mems sensing element and the signal acquisition circuit and the outside needs to be shielded, in step 3, after completing the pre-packaging of each single-channel signal acquisition electronic wafer module, an electromagnetic shielding material layer is further laid on the outer side surface of the insulating connection board (i.e., the side surface facing away from the single-channel signal acquisition electronic wafer module); in addition, if further consideration needs to be given to the protection of the electromagnetic shielding material layer, after the electromagnetic shielding material layer is laid, an insulating connecting plate may be laid again on the outer side surface of the electromagnetic shielding material layer (i.e., the side surface facing away from the single-channel signal acquisition electronic wafer module) to form a sandwich arrangement structure in which the electromagnetic shielding material layer is sandwiched in the insulating connecting plate.
In addition, considering the demand scenario of monitoring the working state of the industrial equipment in the application field of the industrial internet of things, in many cases, synchronous tracking and monitoring of information such as vibration, sound, temperature, etc. of the equipment are required, so the integrated multifunctional micro-electromechanical sensor designed for these demand scenarios is preferably configured, wherein the integrated micro-electromechanical sensor can include a vibration sensing element, a sound sensing element, and a temperature sensing element (of course, other types of micro-electromechanical sensor elements can be arranged according to different actual demands at the same time), the vibration sensing element, the sound sensing element, and the temperature sensing element are all prepared by using an MEMS process and bonded on a multi-channel signal acquisition electronic wafer, and each micro-electromechanical sensor element is electrically connected with a signal input end of a signal acquisition circuit of one channel on the multi-channel signal acquisition electronic wafer respectively, the acquisition of a corresponding path of sensing signal is realized, and then the sensing signal is respectively transmitted to an analog-to-digital conversion circuit on the analog-to-digital conversion electronic wafer for processing, so that the sensing and acquisition functions of at least vibration, sound and temperature information are realized. In addition, as a special design consideration, if the above-mentioned design manner in which the multi-channel signal collection electronic wafer is composed of a plurality of single-channel signal collection electronic wafer modules and the single-channel signal collection electronic wafer modules are stacked is adopted, the vibration sensing element, the sound sensing element and the temperature sensing element are also stacked correspondingly, and in this design scenario, the most preferable stacking order of the respective micro-electromechanical sensing elements is: the temperature sensing element is arranged on the uppermost single-channel signal acquisition electronic wafer module, the sound sensing element is arranged on the lowermost single-channel signal acquisition electronic wafer module, and the vibration sensing element can be arranged on the middle single-channel signal acquisition electronic wafer module; the arrangement mode is more beneficial to sensing the temperature by using the uppermost space of the temperature sensing element, the sound sensing element senses and collects the sound information of the monitored equipment by using the solid state structure of the integrated multifunctional micro-electromechanical sensor as a sound transmission medium at the lowermost layer of the laminated structure, and the vibration sensing element vibrates along with the integrated multifunctional micro-electromechanical sensor and the monitored equipment together to sense the vibration information of the monitored equipment, so that the requirement on the arrangement position of the vibration sensing element is relatively more relaxed and flexible.
In summary, the integrated multifunctional micro-electromechanical sensor of the present invention integrates the signal acquisition circuit and the analog-to-digital conversion circuit on the different multi-channel signal acquisition electronic wafer and the analog-to-digital conversion electronic wafer respectively, and the multi-channel signal acquisition electronic wafer is designed and arranged on the analog-to-digital conversion electronic wafer, so as to realize the stacked design of the acquisition circuit and the analog-to-digital conversion circuit, reduce the transverse layout area, and simultaneously arrange a plurality of micro-electromechanical sensing elements on the multi-channel signal acquisition electronic wafer, so as to realize the compact integrated layout design of the sensing elements, the acquisition circuit and the analog-to-digital conversion circuit structure on the basis of the sensing detection capability of various information, and be beneficial to realizing the miniaturization of the multifunctional micro-electromechanical sensor product; meanwhile, the structure of the multi-channel signal acquisition electronic wafer can be further optimized, so that the signal acquisition of the multi-channel microcomputer electric sensor element can be optimized on compatibility and processing performance more easily, the problem of signal mutual interference among different channels is reduced, and the working stability of an integrated multifunctional microcomputer electric sensor product is improved. Therefore, the integrated multifunctional micro-electromechanical sensor solution can better meet the requirements on miniaturization and working stability of multifunctional micro-electromechanical sensor products in industrial Internet of things application, and has good market application prospect.
Finally, it is noted that the above-mentioned embodiments illustrate rather than limit the invention, and that, while the invention has been described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An integrated multifunctional micro-electromechanical sensor comprises a packaging structure, and is characterized by further comprising an analog-to-digital conversion electronic wafer, a multi-channel signal acquisition electronic wafer and a plurality of micro-electromechanical sensing elements, wherein the analog-to-digital conversion electronic wafer, the multi-channel signal acquisition electronic wafer and the plurality of micro-electromechanical sensing elements are arranged in the packaging structure;
an analog-to-digital conversion circuit with a plurality of analog signal input ports is formed on the analog-to-digital conversion electronic wafer;
the multichannel signal acquisition electronic wafer is arranged on the analog-to-digital conversion electronic wafer, a plurality of channels of signal acquisition circuits are formed on the multichannel signal acquisition electronic wafer, and the signal output ends of the signal acquisition circuits of different channels are electrically connected with different analog signal input ports on the analog-to-digital conversion electronic wafer through conductive terminals respectively;
the plurality of micro-electromechanical sensing elements are arranged on the multi-channel signal acquisition electronic wafer, and the acquisition signal output ends of the micro-electromechanical sensing elements are electrically connected with the signal input ends of the signal acquisition circuits of different channels on the multi-channel signal acquisition electronic wafer through the conductive terminals respectively.
2. The integrated multifunctional mems according to claim 1, wherein the multi-channel signal acquisition electronic wafer is fabricated by integrating signal acquisition integrated circuits having multiple channels on a single wafer.
3. The integrated multifunctional MEMS sensor according to claim 1, wherein the multi-channel signal collecting electronic wafer is composed of a plurality of single-channel signal collecting electronic wafer modules, each of which is formed with a single-channel signal collecting circuit; and each micro-electromechanical sensing element is respectively arranged on different single-channel signal acquisition electronic wafer modules.
4. The integrated multi-functional micro-electro-mechanical sensor according to claim 3, wherein each of the single channel signal collection electronic wafer modules is tiled on an analog-to-digital conversion electronic wafer in a parallel arrangement or an array arrangement.
5. The integrated multi-functional micro-electromechanical sensor according to claim 3, wherein each of the single channel signal collection electronic wafer modules are electrically isolated from each other; preferably, each single-channel signal acquisition electronic wafer module is electrically isolated through interval arrangement, or is connected through an insulating material and electrically isolated.
6. The integrated multi-functional micro-electro-mechanical sensor according to claim 3, wherein each of the single channel signal collection electronic wafer modules is arranged in a stack on an analog-to-digital conversion electronic wafer.
7. The integrated multifunctional MEMS sensor according to claim 6, wherein in each of the single-channel signal collection electronic wafer modules arranged in a stacked manner, the conductive terminals electrically connected with the analog-to-digital conversion electronic wafer of the upper single-channel signal collection electronic wafer module bypass the lower single-channel signal collection electronic wafer module; or the conductive terminal electrically connected with the analog-to-digital conversion electronic wafer and positioned above the single-channel signal acquisition electronic wafer module penetrates through the single-channel signal acquisition electronic wafer module positioned below the single-channel signal acquisition electronic wafer module, and the conductive terminal and a circuit on the single-channel signal acquisition electronic wafer module penetrating through the conductive terminal are mutually and electrically isolated.
8. The integrated multifunctional mems according to claim 7, wherein the end sides of the stacked single-channel signal collection electronic wafer modules are fixedly connected by vertically disposed insulating connection boards.
9. The integrated multifunctional microelectromechanical sensor of claim 8, characterized in that a layer of electromagnetic shielding material is further disposed on the insulating connection plate; preferably, the electromagnetic shielding material layer is clamped in the insulating connecting plate, or laid on a side surface of the insulating connecting plate, which faces away from the single-channel signal acquisition electronic wafer module.
10. The integrated multi-functional micro-electromechanical sensor according to claim 1, wherein the micro-electromechanical sensing elements comprise a vibration sensing element, a sound sensing element and a temperature sensing element; the vibration sensing element, the sound sensing element and the temperature sensing element are all prepared by adopting an MEMS process and are bonded on the multi-channel signal acquisition electronic wafer, and each micro-electromechanical sensing element is electrically connected with the signal input end of a signal acquisition circuit of one channel on the multi-channel signal acquisition electronic wafer.
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