CN112447498A - SiC epitaxial layer growth method and structure for reducing forward conduction SFs expansion of bipolar device and growth method gas supply pipeline - Google Patents
SiC epitaxial layer growth method and structure for reducing forward conduction SFs expansion of bipolar device and growth method gas supply pipeline Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
The invention discloses a SiC epitaxial layer growth method, a structure and a growth method gas supply pipeline for reducing the forward conduction SFs expansion of a bipolar device, wherein the SiC epitaxial layer growth method for reducing the forward conduction SFs expansion of the bipolar device comprises the following steps: s1, providing a SiC substrate; s2, forming an epitaxial buffer layer doped with N and Ti or N and V on the SiC substrate; s3, forming N on the epitaxial buffer layer﹣An epitaxial layer. The scheme has the advantages that the design is exquisite, the epitaxial buffer layer is arranged between the substrate and the epitaxial layer, the minority carrier lifetime in the epitaxial buffer layer can be controllably reduced by effectively controlling the concentration of doped titanium or doped vanadium of deep energy level defects in the outward delay impact layer, and the situation that injected minority carriers are close to the bottom plate when the SiC bipolar device is conducted in the forward direction can be basically realized, so that the SFs is prevented from expanding, and the forward conduction performance of the bipolar device is prevented from deteriorating.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a SiC epitaxial layer growth method for reducing stacking fault expansion when a silicon carbide bipolar device is conducted in the forward direction, a SiC epitaxial layer structure, a PIN diode comprising the SiC epitaxial layer structure and an air supply pipeline for realizing the SiC epitaxial layer growth method.
Background
Silicon carbide (SiC) as a wide bandgap semiconductor material has the excellent properties of large bandgap width, high breakdown voltage, high thermal conductivity, high electron saturation drift rate and the like compared with semiconductor materials such as silicon (Si), gallium arsenide (GaAs) and the like, and is a key material for manufacturing high-temperature, high-frequency and high-power electronic devices and optoelectronic integrated devices.
At present, diode devices based on SiC materials on the market are mainly unipolar devices of Schottky (Schottky) diodes below 2000V, but the on-resistance of the Schottky diodes in the higher voltage field above 5000V is sharply increased (about 2.5 power of voltage increase), and SiC Pin diode bipolar devices have larger high-voltage application potential. Due to the minority carrier injection effect, the SiC PiN diode has larger current conduction capability and smaller specific on resistance. Compared with a punch-through Schottky device, the leakage current of the Pin diode is smaller, and high-voltage blocking is easier to realize.
But, at present, the SiC bipolar device has not been commercialized, and the main reason is the material defect existing in the SiC epitaxial wafer. SiC commercial substrates still have a certain density of basal plane dislocations (BPDs 10)2-103cm-2) And easily become nucleation sites for Stacking Faults (SFs) in the epitaxial layer. When the 4H-SiC bipolar device is forward biased, electrons and holes are recombined in a drift region to expand SFs between BPDs at the interface of a substrate and an epitaxial layer, so that the forward bias of the device is increased,this is the main mechanism responsible for the degradation of the forward conduction performance of SiC bipolar devices.
Disclosure of Invention
It is an object of the present invention to solve the above problems in the prior art by providing a method for generating a new signal at N+Substrate and N-A buffer layer doped with N and Ti or N and V is arranged between the epitaxial layers to reduce N+Substrate and N-Lifetime of holes between epitaxial layers, such that holes do not reach N+And the substrate, thereby preventing the growth of the SiC epitaxial layer structure due to the expansion of SFs when the SiC bipolar device is in forward conduction.
The purpose of the invention is realized by the following technical scheme:
the SiC epitaxial layer growth method for reducing the expansion of the forward conduction SFs of the bipolar device comprises the following steps:
s1, providing a SiC substrate;
s2, forming an epitaxial buffer layer doped with N and Ti or N and V on the SiC substrate;
and S3, forming an N-epitaxial layer on the epitaxial buffer layer.
Preferably, in the method for growing the SiC epitaxial layer to reduce the forward conduction SFs expansion of the bipolar device, the step S2 includes the following steps:
s21, placing the SiC substrate into a reaction chamber of a chemical vapor deposition furnace, and enabling the environment in the reaction chamber to reach the condition of epitaxial buffer layer deposition;
s22, setting the flow rate of a first mass flow controller of a carrier gas supply pipeline between a carrier gas source and a doping source supply device to be n1, setting the flow rate of a second mass flow controller of a doping source supply pipeline between the doping source supply device and a reaction chamber to be n2, and setting the flow rate of a third mass flow controller of a concentration adjusting pipeline connecting the carrier gas source and the doping source supply pipeline to be n3, wherein the connecting point of the concentration adjusting pipeline and the doping source supply pipeline is positioned in front of the second mass flow controller; setting the flow of a fourth mass flow controller of a nitrogen source supply pipeline between the nitrogen source and the reaction chamber as n4 and setting the introduction flow of epitaxial layer source gas;
and S23, conducting the pipeline in the S22, simultaneously introducing a Ti source or a V source, a nitrogen source and epitaxial layer source gas into the reaction chamber, maintaining for a set time, and forming an epitaxial buffer layer doped with N and Ti or N and V on the high-temperature SiC substrate.
Preferably, in the method for growing the SiC epitaxial layer to reduce the forward conduction SFs spread of the bipolar device, in the step S22, the dopant in the dopant supply device is TiCl4Or VCl4。
Preferably, in the method for growing the SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device, in the step S22, n1 is 5-50 sccm, n2 is 1-5 sccm, n3 is 10-100 slm, and n4 is 50-1000 sccm.
Preferably, in the method for growing the SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device, in the step S23, the doping source supply pipeline supplies a Ti source or a V source to the reaction chamber according to 1E-8-1E-5 mol/min.
Preferably, in the method for growing the SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device, the concentration of Ti or V in the epitaxial buffer layer is 5 × 1013cm-3～5×1016cm-3In the meantime.
Preferably, in the method for growing the SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device, the thickness of the epitaxial buffer layer is 1-5 microns.
Preferably, in the method for growing the SiC epitaxial layer to reduce the forward conduction SFs spread of the bipolar device, the step S3 includes a process of stopping the supply of the carrier gas to the dopant source supply device and the supply of the nitrogen source after the step S23, and continuing to supply the epitaxial layer source gas to the reaction chamber for a period of time.
Another objective of the present invention is to provide a SiC epitaxial layer structure for reducing the forward conduction SFs expansion of a bipolar device, which is prepared by the above SiC epitaxial layer growth method for reducing the forward conduction SFs expansion of a bipolar device, and includes a SiC substrate, an epitaxial buffer layer doped with N and Ti or N and V, and an N epitaxial buffer layer and an N doped with N and Ti or N and V, which are sequentially disposed﹣An epitaxial layer.
Preferably, in the SiC epitaxial layer structure for reducing the forward conduction SFs expansion of the bipolar device, the thickness of the epitaxial buffer layer is 1-5 microns.
Preferably, in the SiC epitaxial layer structure for reducing the forward conduction SFs expansion of the bipolar device, the concentration of Ti or V in the epitaxial buffer layer is 5 × 1013cm-3～5×1016cm-3In the meantime.
Preferably, said N is﹣The thickness of the epitaxial layer is 5-100 microns.
Another object of the present invention is to provide a PIN diode having a SiC epitaxial layer structure, which utilizes the above described reduction of the forward conduction SFs expansion of the bipolar device.
Still another object of the present invention is to provide a chemical vapor deposition gas supply pipeline for implementing the above SiC epitaxial layer growth method for reducing the forward conduction SFs expansion of a bipolar device, which includes:
a carrier gas source for supplying a carrier gas;
the carrier gas supply pipeline is connected with a carrier gas source and the doping source supply device and is provided with a first mass flow controller;
the doping source supply pipeline is connected with the doping source supply device and the mixing pipeline, and a second mass flow controller is arranged on the doping source supply pipeline;
the concentration adjusting pipeline is connected with the carrier gas source and the doping source supply pipeline, is provided with a third mass flow controller, and is positioned in front of the second mass flow controller at the connecting point of the third mass flow controller and the source supply pipeline;
a nitrogen source supply pipeline which is connected with the nitrogen source and the mixing pipeline and is provided with a fourth mass flow controller;
and an epitaxial layer source gas supply pipeline connected with the epitaxial layer source gas and the mixing pipeline.
The technical scheme of the invention has the advantages that:
the scheme has the advantages that the design is exquisite, the epitaxial buffer layer is arranged between the substrate and the epitaxial layer, the effective control of the concentration of the doped vanadium (V) or the doped titanium (Ti) of the deep energy level defect in the buffer layer is delayed outwards, the service life of minority carriers (holes) in the epitaxial buffer layer is reduced in a controllable mode, the minority carrier approaching to the bottom plate can be basically restrained, the SFs expansion is prevented, and the forward conduction performance of the bipolar device is prevented from deteriorating.
The method is simple to control and easy to realize, and the minority carrier lifetime in the epitaxial buffer layer can be flexibly adjusted through the design of the process parameters, so that different practical application requirements are met, and the flexibility is better.
By controlling the doping concentration of Ti or V and N elements, N can be reduced to the maximum extent+Substrate and N-The service life of minority carriers between the epitaxial layers is short, the increase of the surface defects of the epitaxial layer film is avoided to the maximum extent, and the quality of the final SiC bipolar device is greatly improved.
This scheme is through the design to the pipeline, can realize the growth in proper order of epitaxial buffer layer and epitaxial layer through one set of pipeline, and control is convenient, easily realize. In addition, the hydrogen in the scheme can be used as carrier gas of a doping source and can also be used as carrier gas of epitaxial layer source gas, and the hydrogen supply pipeline can be used for realizing the purpose of saving a corresponding hydrogen supply branch, thereby being beneficial to simplifying the structure.
Drawings
FIG. 1 is a schematic view of a chemical vapor deposition furnace and a chemical vapor deposition gas supply line according to the present invention;
FIG. 2 is a diagram showing the state of the chemical vapor deposition gas supply line during epitaxial buffer layer deposition (in the figure, black filled automatic valve and manual valve show that the valve is in an open state; white filled automatic valve and manual valve show that the valve is in a closed state);
FIG. 3 is a diagram showing the state of the chemical vapor deposition gas supply line during epitaxial layer deposition (in the figure, the black filled automatic valve and manual valve show that the valves are in an open state; and the white filled automatic valve and manual valve show that the valves are in an off state);
FIG. 4 is a schematic view of an epitaxial structure of the present invention;
fig. 5 is a graph of effect data for the epitaxial structure of the present invention.
Detailed Description
Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. The embodiments are merely exemplary for applying the technical solutions of the present invention, and any technical solution formed by replacing or converting the equivalent thereof falls within the scope of the present invention claimed.
In the description of the schemes, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the embodiment, the operator is used as a reference, and the direction close to the operator is a proximal end, and the direction away from the operator is a distal end.
The method for growing the SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device disclosed by the invention comprises the following steps of:
s1, providing a SiC substrate 100;
s2, forming an epitaxial buffer layer 200 doped with N (nitrogen) and Ti (titanium) or N and V (vanadium) on the SiC substrate 100;
s3, forming N on the epitaxial buffer layer 200﹣An epitaxial layer 300.
During specific preparation, the preparation is carried out through a chemical vapor deposition furnace and a chemical vapor deposition gas supply pipeline connected with the chemical vapor deposition furnace, wherein the chemical vapor deposition furnace can be various known chemical vapor deposition equipment, and the chemical vapor deposition furnace is a known technology and is not described in detail; the chemical vapor deposition gas supply pipeline preferably adopts the following structure, as shown in the attached figure 1, and comprises:
a carrier gas source for supplying a carrier gas,
a carrier gas supply line 1 connecting a carrier gas source 6 and a dopant source supply device 7 and having a first mass flow controller thereon;
a doping source supply pipeline 2 which is connected with the doping source supply device 7 and the mixing pipeline and is provided with a second mass flow controller;
a concentration adjusting pipeline 3 which is connected with the carrier gas source 6 and the doping source supply pipeline 2, is provided with a third mass flow controller, and the connection point of the concentration adjusting pipeline and the doping source supply pipeline 2 is positioned in front of the second mass flow controller;
a nitrogen source supply line 4 for connecting a nitrogen source 8 and a mixing pipe 9, and having a fourth mass flow controller thereon;
and an epitaxial layer source gas supply pipeline 5 connected with an epitaxial layer source gas 10 and a mixing pipeline 9, wherein the mixing pipeline 9 is connected with a pipeline in the reaction chamber 20.
Wherein, as shown in figure 1, the carrier gas source 6 at least comprises H2Of course, the carrier gas source 6 can be any of various other possible carrier gas sources, preferably including H2And Ar, and the carrier gas source 6 can also be used as a carrier gas for the epitaxial layer source gas in addition to the carrier gas for the dopant source in the dopant source supply device 7, and a pipeline between the carrier gas source and the epitaxial layer source gas raw material supply device is not shown in the figure.
As shown in FIG. 1, the doping source supply device 7 comprises a water bath system 71 and a Ti source 72 in the water bath, wherein the Ti source 72 is preferably TiCl4Of course, the dopant source may also be a V atom, for example VCl4Hereinafter, a Ti source will be described as an example.
The water bath system 71 can be any available water bath device, which is not described herein, and the molar flow of the organometallic source gas output by the water bath system satisfies the following formula:
wherein N is the molar flow of the organic metal source gas and the unit mol/min, F is the carrier gas flow and the unit cm3Min, P1 is vapor pressure of organic metal source, P2 is gas in bubbling bottlePressure, V22424 cm3/mol。
As shown in FIG. 2, the carrier gas delivery line 1 includes two branch pipes 11 connected in parallel and a main pipe 12 connected to the two branch pipes 11, one branch pipe 11 being connected to H2A source, and a slave thereon with H2The connection end of the source is sequentially provided with a manual valve 13 and an air-operated valve 14; the other branch pipe 11 is connected to an argon gas source, and a manual valve 15 and a pneumatic valve 16 are provided in this order from the connection end with the argon gas source, and in the present embodiment, when the pneumatic valve is concerned, a solenoid valve (not shown) is provided.
As shown in fig. 2, the main pipe 12 extends into the water bath of the water bath system 71 and is close to the bottom of the water bath, a manual valve 17, an air-operated valve 18 and a first mass flow controller 19 are provided on the main pipe 12 in this order from one end of the water bath system 71, and the range of the first mass flow controller 19 is 0to 50 sccm.
During operation, the carrier gas conveying pipeline 1 conveys H2Input into the water bath system 71, H2Mixing TiCl4The vapor is carried away and transported to the reaction chamber through the dopant source supply line 2.
As shown in fig. 1 and 2, the dopant source supply pipeline 2 includes a main pipeline 21, and a main output pipeline 22 and a pressure-stabilizing output pipeline 23 which are connected in parallel to the main pipeline 21, wherein the main pipeline 21 includes a main air passage 211 extending from a water bath of the water bath system 71, a manual valve 212 and a pneumatic valve 213 are sequentially arranged on the main air passage 211 from a connection end with the water bath system 71, and the main output pipeline 22 and the pressure-stabilizing output pipeline 23 are both connected to the main air passage 211 behind the pneumatic valve 213 (after passing, before passing during gas transportation).
Specifically, as shown in fig. 2, the main output line 22 includes a first branch including a pipe 221 connecting the main gas passage 211, and a second branch including a pneumatic valve 222, a second mass flow controller 223, pneumatic valves 224 and 225, and a manual valve 226, which are sequentially disposed on the pipe 221 from a connection point with the main gas passage 211, and a flow rate adjustment range of the second mass flow controller 223 is between 0to 10 seem, preferably between 0to 5 seem.
As shown in fig. 2, the second branch comprises an output gas channel 227 connected with the pipeline 221, the connection point of the output gas channel 227 and the pipeline 221 is located between the pneumatic valves 224 and 225, and starting from the connection point of the output gas channel 227 and the pipeline 221, pneumatic valves 228 and 229 are sequentially arranged on the output gas channel 227, the output gas channel 227 is connected with a mixing pipeline 9, and the mixing pipeline 9 is connected with an outlet pipe in the reaction chamber 20.
Correspondingly, as shown in fig. 2, the pressure stabilizing output pipeline 23 includes a branch air channel 231 connected between the main air channel 211 and an exhaust gas treatment system (not shown), the branch air channel 231 is provided with a pneumatic valve 232, a pressure flow meter 233, a pneumatic valve 234 and a manual valve 235 in sequence from one end connected with the main air channel 211, and the pressure flow meter 233 has a pressure adjusting range of 0to 2000torr and a flow rate range of 0to 50 slm.
When the pressure flowmeter 233 is operated, the pressure flowmeter 233 is set to a pressure value to be maintained in the entire pipeline, and when the pressure value in the pipeline is greater than the set pressure value of the pressure flowmeter 233, the pressure flowmeter 233 discharges the dopant source gas in the pipeline, so that the pressure in the pipeline is restored to the set value.
In addition, since TiCl4After the liquid is gasified, the liquid is easier to liquefy during the transportation process of the pipeline, correspondingly, a heating band (not shown in the figure) is arranged on the periphery of the doping source supply pipeline 2, so as to avoid liquefying the reaction source, the heating band can be continuously arranged or discontinuously arranged, and the heating band is preferably heated by electric tracing, and certainly can be in other heating forms, which are not described herein again. Furthermore, a heat preservation layer can be arranged outside the pipelineLayer, thereby reducing heat loss.
Due to H output from the doping source supply line 22And TiCl4TiCl in the mixed gas of steam4The concentration of (2) tends to be high and since the flow adjustment range of the first mass flow controller is small, TiCl is therefore very strong4The concentration of (A) can only be varied within a small range, which is not satisfactory for smaller TiCl during deposition4Concentration requirements, and therefore the need to reduce the concentration of the dopant source requires the supply of H in the dopant source supply line 22And TiCl4Adding H into the mixed gas of steam2Thereby reducing TiCl4The concentration of (c).
Specifically, as shown in fig. 2, the concentration adjusting line 3 includes a carrier gas delivery branch line 31 having one end connected to the main line of the carrier gas delivery line at the front end of the first mass flow controller 19 and the other end connected to the main gas line 211 behind the air-operated valve 213, a third mass flow controller 32 and a check valve 33 are sequentially provided on the carrier gas delivery branch line 31 from the end connected to the carrier gas delivery line 1, and the check valve 33 controls the carrier gas to be delivered only in the direction of the main gas line 211.
In this embodiment, it is preferable that the flow rate adjustment range of the third mass flow controller 32 is larger than the flow rate adjustment range of the first mass flow controller 19, specifically, the flow rate adjustment range of the third mass flow controller 32 is between 0to 100slm, so that H can be adjusted in a wide range2And TiCl4TiCl in the mixed gas of steam4The concentration of (c).
The nitrogen source supply pipeline 4 at least comprises a first nitrogen branch 41, the first nitrogen branch 41 comprises an air pipe 411 for connecting the nitrogen source and a mixing pipeline, an air-operated valve 412, a fourth mass flow controller 413, an air-operated valve 414, a one-way valve 415, a manual valve 416 and an air-operated valve 417 are sequentially arranged on the air pipe 411 from the connection point of the air pipe and the nitrogen source, the flow regulation range of the fourth mass flow controller 413 is between 0 and 1000sccm, and the one-way valve 415 controls the nitrogen to be only conveyed towards the mixing pipeline.
Further, the nitrogen source supply line 4 further includes a second nitrogen branch line 42, the second nitrogen branch line 42 includes a branch pipe 421 having one end connected to the air pipe at the front end of the air-operated valve 422 and the other end disposed on the air pipe between the air-operated valve 424 and the check valve 425, and the air-operated valve 422 is disposed on the branch pipe 421.
The air pipe 411 is connected to the main air duct 211, a connection point between the air pipe 411 and the main air duct 211 is located between the check valve 415 and the manual valve 416, and the main air duct 211 is provided with a manual valve 214 located in front of the connection point between the air pipe 411 and the main air duct 211.
Furthermore, the whole pipeline needs to be cleaned before, after or during use, and the scheme preferably adopts a purging mode for cleaning, so that the chemical vapor deposition gas supply pipeline further comprises a purging pipeline, and the purging pipeline comprises a first purging pipeline, a second purging pipeline, a third purging pipeline, a fourth purging pipeline and a fifth purging pipeline which are matched with the carrier gas conveying pipeline, the doping source supply pipeline 2, the concentration adjusting pipeline 3 and the nitrogen source supply pipeline 4 to form a set of cleaning pipeline system.
The first purge line includes a first purge line having one end connected to the main pipe 12 between the first mass flow controller 19 and the air-operated valve 18 and the other end connected to the main air passage 211 behind the air-operated valve 213, and the air-operated valve a is disposed on the first purge line.
The second purge line comprises a second purge pipe having one end connected to the main pipe between the manual valve 17 and the pneumatic valve 18 and the other end connected to the main pipe 211 between the manual valve 212 and the pneumatic valve 213, and the pneumatic valve B, C is connected in series to the second purge pipe.
The third purge line comprises a third purge line terminated at one end and connected at the other end to the second purge line between pneumatic valves B, C, and having a manual valve D disposed thereon.
The fourth purging pipeline comprises a fourth purging pipeline, one end of the fourth purging pipeline is connected between the manual valve D and a connection point of the third purging pipeline and the second purging pipeline, the other end of the fourth purging pipeline is connected to the pipeline 221 between the pneumatic valve 224 and a connection point of the output air channel 227 and the pipeline 221, and a one-way valve Q and a pneumatic valve E are sequentially arranged on the fourth purging pipeline from one end connected with the main pipeline 21.
The fifth purging pipeline comprises a fifth purging pipeline, one end of the fifth purging pipeline is connected to the main air channel behind the pneumatic valve 213, the other end of the fifth purging pipeline is connected with the fourth purging pipeline, the connection point of the fifth purging pipeline is located between the one-way valve and the connection point of the fourth purging pipeline and the third purging pipeline, and the fifth purging pipeline is provided with a pneumatic valve F.
The epitaxial layer source gas 10 includes at least C3H8(propane) and SiH4(silanes) which react as reaction gases to form epitaxial layers; meanwhile, the epitaxial layer source gas 10 further comprises HCl for performing surface treatment during deposition, and three types of epitaxial layer source gases are supplied through a branch, that is, the epitaxial layer source gas supply pipeline 5 comprises at least three branches connected with the epitaxial layer source gas 10 and the mixing pipeline 9, each branch comprises a pipeline 51 connected with the mixing pipeline 9, the pipeline 51 is at least provided with a manual valve 52, a pneumatic valve 53 and a mass flow controller 54 in sequence from a gas inlet end to a gas outlet end, and a check valve for outputting gas to the mixing pipeline 9 can be further provided, and the pipeline 51 can be further connected with a water bath system (not shown in the figure) for generating the epitaxial layer source gas, and the water bath system is connected with the carrier gas source 6 through a pipeline (not shown in the figure).
How to implement the above SiC epitaxial layer growth method for reducing the forward conduction SFs expansion of the bipolar device through the chemical vapor deposition furnace and the chemical vapor deposition gas supply pipeline will be specifically described below, specifically as follows:
step S1, providing a SiC substrate 100, and before deposition of the SiC substrate 100, performing pretreatment, including cleaning, drying, and the like, wherein the cleaning may be plasma cleaning, ultrasonic cleaning, and the drying may be air drying; of course, the preprocessing may also include other processing procedures, which are known in the art and will not be described in detail herein.
After pretreatment, the growth of an epitaxial buffer layer can be carried out, and the step S2 specifically comprises the following processes:
s21, as shown in fig. 2, placing the pre-processed SiC substrate 100 on a substrate holder in a reaction chamber 20 of a chemical vapor deposition furnace, and making the environment in the reaction chamber 20 reach the conditions for epitaxial buffer layer deposition, which specifically includes:
the reaction chamber 20 was evacuated, and the degree of vacuum in the reaction chamber 20 was maintained at about 75 torr.
Purging the main pipeline by hydrogen, wherein when the main pipeline is purged specifically, a manual valve 13 and an automatic valve 14 on a branch 11 connected with a hydrogen source are opened; the air-operated valve a on the first purge line is opened, the air-operated valves 222, 224 on the main output line 22 and the air-operated valve 229 on the second branch line are opened; automatic valves 232 and 234 and manual valve 235 for opening the pressure-stabilizing output line 23; turn off the pneumatic valve 228 on the second branch; setting the flow rate of the first mass flow controller 19 to 5sccm, the flow rate of the second mass flow controller 223 to 1 to 5sccm, the flow rate of the third mass flow controller 32 to 10 to 100slm, the flow rate n5 of the pressure flow meter 233 to 800 ± 50torr, and the flow rate of the fourth mass flow controller to 0 sccm; at this time, the hydrogen gas passes through the pipe and is discharged from the VENT end without entering the reaction chamber.
After a period of ventilation, the pneumatic valve A is closed, and the manual valve 17 and the automatic valve 18 on the main pipe 12 are opened; opening the manual valve 212 and the pneumatic valve 213 on the main pipe 21 of the dopant source supply pipe 2, and maintaining the state of the purge process; at this time, H2Passing through a water bath system and carrying a doping source (TiCl)4) Is discharged from the duct through the VENT end, and the supply of air at this stage is continued to stabilize the air flow in the entire duct.
Heating the SiC substrate 100 to a set deposition temperature, preferably 1575 + -25 deg.C, of the SiC substrate 100, followed by the epitaxial buffer layer 200 and N﹣Deposition of epitaxial layer 300.
S22, setting the flow of the first mass flow controller of the carrier gas supply pipeline 1 between the carrier gas source and the doping source supply device as n1, and setting the doping source supply device and the reaction deviceThe flow rate of the second mass flow controller of the doping source supply line 2 between the chambers is n2, the flow rate of the third mass flow controller of the concentration adjusting line 3 connecting the carrier gas source and the doping source supply line 2 is n3, and n3 is larger than n1 and n2, and the connecting point of the concentration adjusting line 3 and the doping source supply line 2 is positioned in front of the second mass flow controller; setting the flow rate of the fourth mass flow controller of the nitrogen source supply line 4 between the nitrogen source and the reaction chamber to n 4; the flow rate of the epitaxial layer source gas of the pipeline 4 arranged between the epitaxial layer source gas and the reaction chamber is that three pieces of HCl and C are supplied respectively3H8And SiH4And the pressure of the pressure flow meter that sets the pressure-stabilizing output line 23 is n 5.
In actual operation, the above parameters can be set according to different process requirements and doping concentration requirements, and preferably, in step S21, the parameters of the first mass flow controller 19, the second mass flow controller 223, the third mass flow controller 32, and the pressure flow meter 233 are kept unchanged, that is, n1 is maintained between 5sccm and 50sccm, n2 is maintained between 1sccm and 5sccm, n3 is maintained between 10slm and 100slm, n4 is maintained between 50sccm and 1000sccm, and n5 is maintained between 800 ± 50 torr.
In a more specific embodiment, for example, n1 is between 4-6 sccm; n2 is 5 sccm; n3 is 10slm and the fourth mass flow meter flow rate n4 is set between 200 ± 10 sccm; controlling the output flow of the HCl output mass flow controller to be 200 +/-3 sccm; will output C3H8The output flow of the mass flow controller is controlled to be 3.5 +/-0.5 sccm; will output SiH4The output flow of the mass flow controller of (1) is controlled to be between 15 +/-1 sccm.
S23, as shown in FIG. 2, the pipeline for delivering the carrier gas to the water bath system, the concentration adjusting pipeline, the pipeline for delivering the doping source to the reaction chamber and the nitrogen supply pipeline are connected, specifically, the holding and H are connected2The manual valve 13 and the automatic valve 14 on the branch 11 connected with the source are in an open state, and the manual valve 17 and the automatic valve 18 on the main pipe 12 are kept open; main pipe for holding dopant source supply pipe 2The manual valve 212 and the air-operated valve 213 on 21 are opened; maintaining the pneumatic valves 222, 224 of the main output line 22 and the pneumatic valve 229 on the second branch in an open state; keeping the automatic valves 232 and 234 and the manual valve 235 of the pressure-stabilizing output pipe 23 in the open state; the pneumatic valve 228 on the second branch is opened, and the pneumatic valves 412, 414, 417 and the manual valve 416 of the nitrogen source supply line 4 are opened; opening the pneumatic valve 53 and the manual valve 52 on the epitaxial layer source gas supply line 5; the other manual valves and automatic valves remain in the off state.
At this time, H2Introducing into the water bath system 71 to carry TiCl4The steam enters the doping source supply pipeline 2 and is conveyed to the mixing pipeline 9 through a second branch, meanwhile, the nitrogen is conveyed to the mixing pipeline 9 through the nitrogen source supply pipeline 4, and HCl and C3H8And SiH4And finally, the deposition gases enter the reaction chamber through the mixing pipeline simultaneously, and the supply of the deposition gases is maintained for a set time, specifically, the gas supply time is 2300 +/-200 seconds, preferably 40 minutes, so that the deposition gases introduced into the reaction chamber react on the high-temperature SiC substrate 100 to form the Ti-doped epitaxial buffer layer 200.
In addition, in actual operation, before the carrier gas is conveyed to the water bath system and the doping source is conveyed to the reaction chamber, the HCl supply branch is led to be communicated to convey HCl for a period of time to the reaction chamber, so that the surface of the substrate can be subjected to preliminary treatment by the HCl, and certain surface defects are eliminated.
In actual deposition, the doping source supply pipeline 2 is controlled to supply a Ti source into the reaction chamber according to 1E-8-1E-5 mol/min, finally, the thickness of the epitaxial buffer layer 200 generated by reaction is 1-5 microns, and the concentration of Ti in the epitaxial buffer layer 200 is 5 multiplied by 1013cm-3～5×1016cm-3The main reason for this is that the inventors found: the higher the Ti doping concentration, the stronger the minority carrier lifetime inhibition effect is, but the higher the doping concentration, the more the epitaxial film surface defects are caused, so that a great deal of experiments preferably achieve the first minority carrier lifetime inhibition effect and the surface defectsLeast effective unification.
After the epitaxial buffer layer 200 is grown, the step S3 is performed, and specifically, as shown in fig. 3, after the step S23, the air-operated valves 18 and 213 are turned off, thereby making H2No longer delivered to the water bath system, and the output of the doping source of the water bath system 71 is blocked, while the nitrogen source supply line is turned off, the nitrogen source supply is stopped, and further, the pneumatic valve A is turned on, so that H2Continue to the reaction chamber 20 and adjust the output C3H8The output flow of the mass flow controller is 6 plus or minus 0.5sccm, and the epitaxial layer source gas is continuously supplied into the reaction chamber, wherein the specific gas supply time is controlled to be 1860 plus or minus 50 seconds, so that the epitaxial layer source gas reacts on the epitaxial buffer layer 200 to form the epitaxial layer 300.
The scheme further discloses a SiC epitaxial layer structure for reducing the forward conduction SFs expansion of the bipolar device, and the SiC epitaxial layer structure is prepared by the SiC epitaxial layer growth method for reducing the forward conduction SFs expansion of the bipolar device, as shown in figure 4, the SiC epitaxial layer structure comprises a SiC substrate 100, an epitaxial buffer layer 200 doped with N and Ti or N and V, and an N and V epitaxial buffer layer﹣An epitaxial layer 300. The thickness of the epitaxial buffer layer 200 is 1-5 microns; the concentration of Ti in the epitaxial buffer layer is 5 multiplied by 1013cm-3～5×1016cm-3The thickness of the epitaxial layer 300 is between 5 and 100 micrometers, so that the epitaxial layer can face pressure-resistant devices with different pressures.
As shown in fig. 5, due to the presence of the deep level defect doped with vanadium (V) or titanium (Ti) in the epitaxial buffer layer, the hole density is substantially reduced to zero at the depth of the buffer layer, so that the approach of minority carriers to the SiC substrate can be substantially suppressed, thereby preventing SFs expansion.
The scheme also discloses a PIN diode which comprises the SiC epitaxial layer structure for reducing the forward conduction SFs expansion of the bipolar device, wherein N is﹣P is also formed on the epitaxial layer 300+The epitaxial layer or the injection layer further includes other structures such as electrodes, and the other structures herein are known technologies and are not the key points of the present solution, and are not described herein again.
The invention has various embodiments, and all technical solutions formed by adopting equivalent transformation or equivalent transformation are within the protection scope of the invention.
Claims (14)
1. The SiC epitaxial layer growth method for reducing the expansion of the forward conduction SFs of the bipolar device is characterized by comprising the following steps of: the method comprises the following steps:
s1, providing a SiC substrate (100);
s2, forming an epitaxial buffer layer (200) doped with N and Ti or N and V on the SiC substrate (100);
s3, forming N on the epitaxial buffer layer (200)﹣An epitaxial layer (300).
2. The method for growing the SiC epitaxial layer to reduce the forward conduction SFs expansion of the bipolar device as claimed in claim 1, wherein: the step S2 includes the following processes:
s21, placing the SiC substrate (100) into a reaction chamber of a chemical vapor deposition furnace, and enabling the environment in the reaction chamber to reach the condition of epitaxial buffer layer deposition;
s22, setting the flow rate of a first mass flow controller of a carrier gas supply pipeline (1) between a carrier gas source and a doping source supply device to be n1, setting the flow rate of a second mass flow controller of a doping source supply pipeline (2) between the doping source supply device and a reaction chamber to be n2, and setting the flow rate of a third mass flow controller of a concentration adjusting pipeline (3) connected with the carrier gas source and the doping source supply pipeline (2) to be n3, wherein the connection point of the concentration adjusting pipeline (3) and the doping source supply pipeline (2) is positioned in front of the second mass flow controller; setting the flow of a fourth mass flow controller of a nitrogen source supply pipeline (4) between the nitrogen source and the reaction chamber as n4 and setting the introduction flow of epitaxial layer source gas;
and S23, conducting the pipeline in the S22, simultaneously introducing a Ti source or a V source, a nitrogen source and epitaxial layer source gas into the reaction chamber, maintaining for a set time, and forming an epitaxial buffer layer doped with N and Ti or N and V on the high-temperature SiC substrate.
3. The SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device of claim 2The growth method is characterized by comprising the following steps: in the step S22, the doping source in the doping source supplying device is TiCl4Or VCl4。
4. The method for growing the SiC epitaxial layer to reduce the forward conduction SFs expansion of the bipolar device as claimed in claim 2, wherein: in the step S22, n1 is 5to 50sccm, n2 is 1 to 5sccm, n3 is 10 to 100slm, and n4 is 50to 1000 sccm.
5. The method for growing the SiC epitaxial layer to reduce the forward conduction SFs expansion of the bipolar device as claimed in claim 2, wherein: in the step S23, the doping source supply pipeline (2) supplies a Ti source or a V source to the reaction chamber according to the speed of 1E-8-1E-5 mol/min.
6. The method for growing the SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device according to any one of claims 1 to 5, wherein the method comprises the following steps: the concentration of Ti or V in the epitaxial buffer layer (200) is 5 x 1013cm-3～5×1016cm-3In the meantime.
7. The method for growing the SiC epitaxial layer for reducing the forward conduction SFs expansion of the bipolar device according to any one of claims 1 to 5, wherein the method comprises the following steps: the thickness of the epitaxial buffer layer (200) is 1-5 microns.
8. The method for growing the SiC epitaxial layer to reduce the forward conduction SFs expansion of the bipolar device as claimed in claim 2, wherein: the S3 step includes the process of stopping the supply of the carrier gas to the dopant source supply device and the nitrogen source supply after the S23 step, and continuing to supply the epitaxial layer source gas to the reaction chamber for a while.
9. The SiC epitaxial layer structure for reducing the expansion of the forward conduction SFs of the bipolar device is characterized in that: prepared by the SiC epitaxial layer growth method for reducing the forward conduction SFs expansion of the bipolar device as claimed in any one of the claims 1 to 8,it comprises a SiC substrate (100), an epitaxial buffer layer (200) doped with N and Ti or N and V, and N﹣An epitaxial layer (300).
10. The SiC epitaxial layer structure for reducing the forward conduction SFs propagation of the bipolar device of claim 8, wherein: the thickness of the epitaxial buffer layer (200) is 1-5 microns.
11. The SiC epitaxial layer structure for reducing the forward conduction SFs propagation of the bipolar device of claim 8, wherein: the concentration of Ti or V in the epitaxial buffer layer is 5 multiplied by 1013cm-3～5×1016cm-3In the meantime.
12. The SiC epitaxial layer structure for reducing the forward conduction SFs propagation of the bipolar device of claim 8, wherein: said N is﹣The thickness of the epitaxial layer (300) is between 5 and 100 microns.
A PIN diode, characterized by: an epitaxial layer structure of SiC comprising a reduced extension of forward conduction SFs of a bipolar device as claimed in any of claims 9 to 12.
14. The chemical vapor deposition gas supply pipeline is characterized in that: a method for growing an epitaxial layer of SiC for reducing the spread of forward conduction SFs of a bipolar device as defined in any one of claims 1 to 8, which comprises
A carrier gas source for supplying a carrier gas;
a carrier gas supply pipeline (1) which is connected with a carrier gas source and a doping source supply device and is provided with a first mass flow controller;
the doping source supply pipeline (2) is connected with the doping source supply device and the mixing pipeline, and a second mass flow controller is arranged on the doping source supply pipeline;
a concentration adjusting pipeline (3) which is connected with the carrier gas source and the doping source supply pipeline (2), is provided with a third mass flow controller, and the connection point of the concentration adjusting pipeline and the doping source supply pipeline (2) is positioned in front of the second mass flow controller;
a nitrogen source supply pipeline (4) which is connected with the nitrogen source and the mixing pipeline and is provided with a fourth mass flow controller;
and an epitaxial layer source gas supply pipeline (5) connected with the epitaxial layer source gas and the mixing pipeline.
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