CN112442739A - Pyramid rapid texturing liquid, texturing method thereof and silicon wafer product - Google Patents
Pyramid rapid texturing liquid, texturing method thereof and silicon wafer product Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 90
- 239000010703 silicon Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000007788 liquid Substances 0.000 title claims abstract description 27
- 229940095676 wafer product Drugs 0.000 title abstract description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 46
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 42
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 42
- 239000000243 solution Substances 0.000 claims description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- 239000002253 acid Substances 0.000 claims description 26
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 24
- 229910001431 copper ion Inorganic materials 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 22
- 239000003513 alkali Substances 0.000 claims description 21
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 21
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 238000002791 soaking Methods 0.000 claims description 19
- 238000005406 washing Methods 0.000 claims description 19
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 15
- 239000007800 oxidant agent Substances 0.000 claims description 15
- 230000001590 oxidative effect Effects 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000005554 pickling Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- 229940096017 silver fluoride Drugs 0.000 claims description 3
- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 claims description 3
- 229910000367 silver sulfate Inorganic materials 0.000 claims description 3
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 abstract description 14
- 238000009826 distribution Methods 0.000 abstract description 7
- 238000002161 passivation Methods 0.000 abstract description 6
- 238000005498 polishing Methods 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 67
- 238000004140 cleaning Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 238000001878 scanning electron micrograph Methods 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000004090 dissolution Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 210000002268 wool Anatomy 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- -1 silver ions Chemical class 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a pyramid rapid texturing liquid, a texturing method thereof and a silicon wafer product. The pyramid rapid texturing liquid can be used for rapidly texturing the surface of a silicon wafer at room temperature, independent, complete, uniform and tightly-arranged regular pyramid textured structures can be formed on the surface of the silicon wafer in a very short time, the structure size is 0.5-2 mu m, the surface reflectivity is 8-20%, compared with the existing production line pyramid structure, the pyramid textured structure is small in size, smooth in pyramid tip and more uniform in distribution, back polishing and passivation are facilitated, and the pyramid rapid texturing liquid is particularly suitable for existing efficient battery structures such as PERC, HIT and IBC. The pyramid texturing method provided by the invention has the advantages that the overall reaction time is controlled within 5min, the time cost and the equipment cost can be greatly reduced, and the pyramid texturing method is beneficial to wide popularization and application.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a pyramid rapid texturing liquid, a texturing method thereof and a silicon wafer product.
Background
The texturing is taken as a key process in a crystalline silicon battery process, and plays an important role in the aspect of efficiency improvement. For monocrystalline silicon, a common texturing process is alkali texturing, and a pyramid structure is formed on the surface of a silicon wafer by alkali anisotropic etching. In the alkali texturing process, some additives, such as IPA and the like, are usually added to effectively regulate the reaction. However, with the development of the crystalline silicon battery technology, cost reduction and efficiency improvement become more and more the focus of attention. The traditional alkali wool making process needs high temperature (75-85 ℃), long time (20-30 min) and large weight-reducing rough polishing, even though alkali wool making is improved in recent years, the wool making temperature and the rough polishing process still need high temperature, and the reaction time is still maintained at about 10 min.
In addition, the pyramid structure obtained by the existing alkali texturing process has a relatively sharp tower top, is not beneficial to passivation of a subsequent battery process, especially has very strict requirements on passivation of high-efficiency battery technologies such as PERC, HIT, IBC and the like, and if the pyramid passivation process needs to be improved, an additional chemical treatment process of 'rounding' needs to be introduced, but the optical characteristics of the pyramid structure are simultaneously lost, and the reflectivity is increased. Moreover, the pyramid structure obtained by the existing alkali texturing process has a large size, generally 1-10 μm, and the size distribution is very uneven, so that the large-size structure and the size are different, which is very unfavorable for passivation, back polishing and electrode contact of the subsequent battery process, and seriously affects the improvement of the battery efficiency.
Therefore, based on the above points, a new process is needed to solve the problems of process cost and structural defects at the same time.
Disclosure of Invention
In view of the above disadvantages, the present invention provides a liquid for rapid texture etching of pyramids, a texture etching method thereof, and a silicon wafer product.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
the pyramid rapid texturing liquid comprises silver ion sources, copper ion sources, fluoride ion sources, oxidants and deionized water, and the concentration of each component is as follows: 0.001 mmol/L-0.5 mmol/L silver ion source; 1 mmol/L-200 mmol/L of copper ion source; 0.5-10 mol/L of fluoride ion source; the oxidant is 0.1 mol/L-8 mol/L.
As a modified scheme of the invention, the silver ion source is selected from one or more of silver nitrate, silver fluoride and silver sulfate.
As a modified scheme of the invention, the copper ion source is selected from one or more of copper nitrate, copper sulfate and copper chloride.
In a further embodiment of the present invention, the fluoride ion source is hydrofluoric acid.
As a modification of the present invention, the oxidizing agent is capable of oxidizing silicon in the silicon wafer to silicon oxide and copper to copper ions.
As an improved scheme of the invention, the silver ion source is silver nitrate, the copper ion source is copper nitrate, the fluoride ion source is hydrofluoric acid, and the oxidant is hydrogen peroxide.
A pyramid texturing method comprises the following steps:
(1) preparing the pyramid rapid texturing liquid;
(2) preparing a silicon wafer;
(3) placing the silicon wafer in the pyramid rapid texturing liquid, etching for a certain time at a preset temperature, and texturing the silicon wafer to obtain a silicon wafer with pyramid texturing on the surface;
(4) placing the silicon wafer with the pyramid texture surface in pickling solution, soaking for 120-180 s, then washing with water, removing residual acid solution on the surface, and drying with nitrogen; the acid adopted in the pickling solution is concentrated nitric acid; the mass percentage concentration of the nitric acid is 59-65%;
the steps (1) and (2) are not in sequence.
As an improvement of the present invention, the step (2) specifically includes the following steps:
(2.1) prewashing: soaking the prepared silicon wafer in a mixed solution of alkali liquor and hydrogen peroxide for a certain time, and then washing with water to remove the alkali liquor carried on the surface;
(2.2) water washing: and (3) placing the pre-washed silicon wafer into an acid solution, soaking for a certain time to remove alkali liquor remaining on the surface of the silicon wafer, and then placing the silicon wafer into water to remove acid liquor carried on the surface.
Wherein the mass percentage concentration of the alkali liquor is 50 percent, and the mass percentage concentration of the hydrogen peroxide is 30 to 35 percent; the volume ratio of the alkali liquor to the hydrogen peroxide is as follows: 1-3: 2-10; the soaking temperature in the mixed solution is 45-60 ℃, and the soaking time is 60-180 s; the acid solution is a diluent of hydrofluoric acid or nitric acid, wherein the mass percent of the hydrofluoric acid is 41-49%, and the mass percent concentration of the nitric acid is 59-65%; the volume ratio of the acid in the diluent is 1 percent; the soaking time in the acid solution is 80-200 s, and the soaking temperature is room temperature.
As a modified scheme of the invention, the preset temperature in the step (3) is 20-40 ℃, and the etching time is 60-360 s.
A silicon wafer is provided with a texturing surface, wherein the texturing surface is formed by texturing by adopting the pyramid texturing method, the texturing surface is formed by pyramid structures which are relatively consistent in size, uniform and independently distributed, the bottoms of the pyramid structures are quadrangles, and the length of each quadrangle is 0.5-2 microns; the height of the pyramid structure is 0.5-2 μm. The shape of the top of the pyramid on the texturing surface can change along with different proportions of the texturing liquid and different texturing time.
The invention has the beneficial effects that: the pyramid rapid texturing liquid provided by the invention mainly adopts a silver ion source and a copper ion source as main catalysts, and rapid texturing is completed under the synergistic cooperation of a fluoride ion source and an oxidant. The amount of silver ion source used is very small, and the copper ion source is a relatively cheap catalyst, so the cost of the wool making liquid is very low. In the texturing solution, a silver ion source is used as an induced texturing catalyst, and nano-raising points are preferentially formed on the surface of a silicon wafer; the influence of the diamond wire cutting line marks on metal deposition can be effectively weakened by the increase of the nano raised points, and the uniformity of a final structure can be greatly guaranteed. Because the nano-raising points effectively reduce the surface energy, the copper ion source can more easily carry out various anisotropic depositions along the nano-raising points; in addition, the existence of silver ions destroys the local downward etching behavior of copper ions; meanwhile, due to the increase of the surface raising points, the continuous growth of the copper particles deposited on the surface is effectively limited; the oxidant existing in the solution can effectively ensure the balance between the deposition and the dissolution of copper; the HF acid in the solution ensures the rapid etching of the silicon oxide and forms fluosilicic acid dissolved in water, so that the whole reaction is promoted to go on; anisotropic deposition of copper results in anisotropic etching by HF acid; by combining the factors, the finally formed structure is guaranteed to be a pyramid structure, and the pyramid structure is uniform in distribution, consistent in size and controllable in appearance.
The pyramid texturing method provided by the invention can quickly form a pyramid structure on the surface of the silicon wafer at room temperature without rough polishing; the whole reaction time is controlled within 5min, and the reaction temperature is controlled near 25 ℃, so that the time cost and the equipment cost can be greatly reduced; the size of the pyramid structure formed by texturing is smaller than that of the structure obtained by alkaline texturing, and the sizes of the independent pyramids are consistent, and the size range is 0.5-2 mu m; the small-size inverted pyramid structure is very beneficial to passivation and back polishing in a high-efficiency battery structure while the reflectivity is ensured, and meanwhile, electrode contact can be greatly improved due to the fact that the size of the small-size inverted pyramid structure is consistent, and the improvement of the battery efficiency is greatly facilitated. In addition, the shape and size of the pyramid can be regulated and controlled by adjusting parameters such as texturing proportion, texturing temperature and reaction time so as to better match with the subsequent battery process, and the pyramid has the advantages of high flexibility, wide application range and contribution to wide popularization and application.
The invention is further illustrated by the following figures and examples.
Drawings
Fig. 1 is a partially enlarged SEM image of the surface topography of the pyramid obtained after texturing in example 1 of the present invention.
Fig. 2 is an SEM image of the pyramid surface obtained after texturing in example 1 of the present invention.
Fig. 3 is a cross-sectional SEM image of a pyramid obtained after texturing in example 1 of the present invention.
Fig. 4 is an SEM image of the pyramid surface obtained after texturing in example 2 of the present invention.
Fig. 5 is a cross-sectional SEM image of a pyramid obtained after texturing in example 2 of the present invention.
Fig. 6 is an SEM image of the pyramid surface obtained after texturing in example 3 of the present invention.
Fig. 7 is a cross-sectional SEM image of a pyramid obtained after texturing in example 3 of the present invention.
Fig. 8 is an SEM image of the pyramid surface obtained after texturing in example 4 of the present invention.
Fig. 9 is a cross-sectional SEM image of a pyramid obtained after texturing in example 4 of the present invention.
Fig. 10 is an SEM image of the pyramid surface obtained after texturing in example 5 of the present invention.
Fig. 11 is a cross-sectional SEM image of a pyramid obtained after texturing in example 5 of the present invention.
FIG. 12 is a graph comparing reflectivity for texturing according to various embodiments of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
In order to further reduce the process cost of the existing photovoltaic texturing technology and simplify the process steps, and simultaneously seek a structure to effectively match with an efficient battery technology and improve the battery efficiency, the invention provides a pyramid rapid texturing liquid. In one embodiment of the invention, the pyramid rapid texturing solution comprises silver ion sources, copper ion sources, fluoride ion sources, an oxidizing agent and deionized water; wherein the concentration of each component is as follows: 0.001 mmol/L-0.5 mmol/L silver ion source; 1 mmol/L-200 mmol/L of copper ion source; 0.5-10 mol/L of fluoride ion source; oxidant 0.1-8 mol/L; the oxidizing agent is capable of oxidizing silicon in the silicon wafer to silicon oxide and copper to copper ions.
By immersing the silicon wafer into the pyramid rapid texturing liquid, and controlling the concentration of each component in the texturing liquid, the pyramid rapid texturing can be completed in a short time at room temperature, and finally the obtained pyramid has uniform structure distribution and consistent size, and can be well matched with an efficient battery process. The main mechanism of the texturing process is as follows: the silver ion source is used as an induced texturing catalyst, and nanometer raising points are preferentially formed on the surface of the silicon wafer; the influence of the diamond wire cutting line marks on metal deposition can be effectively weakened by the increase of the nano raised points, and the uniformity of a final structure can be greatly guaranteed. The copper ion source then anisotropically deposits along the nano-fluff points as the nano-fluff points effectively lower the surface energy. The existence of silver ions destroys the local downward etching behavior of copper ions; meanwhile, due to the increase of the surface raising points, the continuous growth of the copper particles deposited on the surface is effectively limited; the oxidant existing in the solution can effectively ensure the balance between the deposition and the dissolution of copper; the HF acid in the solution ensures the rapid etching of the silicon oxide and forms fluosilicic acid dissolved in water, so that the whole reaction is promoted to go on; anisotropic deposition of copper results in anisotropic etching by HF acid; by combining the factors, the pyramid structure with uniform distribution and consistent size is ensured to be finally formed.
Preferably, the silver ion source is selected from one or more of silver nitrate, silver fluoride and silver sulfate; the copper ion source is preferably selected from one or more of copper nitrate, copper sulfate and copper chloride; the oxidizing agent is capable of oxidizing silicon in the silicon wafer to silicon oxide and copper to copper ions. The present invention is preferably applied to the above-described copper ion source, but is not limited thereto as long as freely moving copper ions can be ionized in the copper ion source.
In other embodiments, the silver ion source is preferably silver nitrate, the copper ion source is preferably copper nitrate, the fluoride ion source is preferably hydrofluoric acid, and the oxidant is preferably hydrogen peroxide. By adopting the texturing liquid with the components, a better pyramid textured structure can be obtained, the pyramid textured structure is uniform in size and distribution, the size range is 1-2 mu m, the back polishing process in a high-efficiency battery structure is facilitated, and the battery efficiency can be further improved.
The invention provides a pyramid texturing method, which comprises the following steps: (1) preparing the pyramid rapid texturing liquid; (2) preparing a silicon wafer; (3) and placing the silicon wafer in the pyramid rapid texturing liquid, etching for a certain time at a preset temperature, and texturing the silicon wafer to obtain the silicon wafer with the pyramid texturing surface.
The silicon wafer comprises monocrystalline silicon, polycrystalline silicon and ingot casting monocrystalline, and can be suitable for both N-type silicon wafers and P-type silicon wafers. The original silicon wafer without texturing is placed in the pyramid rapid texturing liquid, due to the existence of silver ions, surface texturing points are greatly increased, anisotropic deposition of copper can be effectively and uniformly spread on the surface of the silicon wafer, further growth and combination of the copper are prevented, meanwhile, the texturing of the silicon wafer can be completed in a very short time under the room temperature condition by virtue of the effective synergistic effect of HF acid and hydrogen peroxide, and finally, a pyramid structure which is uniformly distributed, uniform in size and closely arranged is formed.
The pyramid texturing method can realize the rapid texturing of the pyramid, wherein the preferred scheme is that the texturing reaction temperature is 20-40 ℃, the reaction temperature is basically in the room temperature range, the dependence on external heating or cooling is very small, the production cost is further reduced, and the process is simplified. The reaction time of the texturing is 60-600 s, and the longer time or the shorter time is not favorable for forming a better pyramid textured structure. Too short a time, insufficient structure formation; for too long, the pyramid structure that has been formed can be damaged by the second etching, causing the structure to collapse. More preferably, the reaction temperature for texturing is 25-35 ℃ and the reaction time is 180-480 s. Most preferably, the reaction temperature for texturing is 30 ℃ and the reaction time is 240 s.
As other pollution or impurity residues are inevitably introduced into the silicon wafer in the cutting, packaging and transporting processes, the silicon wafer is also required to be subjected to pre-cleaning and water washing before texturing. The method specifically comprises the following steps: firstly, soaking a silicon wafer in a mixed solution of alkali liquor and hydrogen peroxide for a certain time, and then washing with water to remove alkali liquor carried on the surface; then, placing the silicon wafer after washing in an acid solution, soaking for a certain time to remove alkali liquor remaining on the surface of the silicon wafer, and then placing in water to remove acid liquor carried on the surface; wherein the mass percentage concentration of the alkali liquor is 50 percent, and the mass percentage concentration of the hydrogen peroxide is 30 to 35 percent; the volume ratio of the alkali liquor to the hydrogen peroxide is as follows: 1-3: 2-10; the soaking temperature is 45-60 ℃; the soaking time was 120 s. The acid solution is a diluent of hydrofluoric acid or nitric acid, wherein the mass percent of the hydrofluoric acid is 41-49%, and the mass percent concentration of the nitric acid is 59-65%; the volume ratio of the acid in the diluent is 1 percent; the soaking time is 120 s; the soaking temperature is room temperature.
In addition, the textured silicon wafer is finally prepared to represent the performance of the solar cell and put into practical use, so the method of the invention also comprises the step of removing residual metal on the surface of the textured silicon wafer. The post-cleaning step comprises: placing the silicon wafer with the pyramid texture surface in pickling solution, soaking for 120-180 s, then washing with water, removing residual acid solution on the surface, and drying with nitrogen; the acid adopted in the pickling solution is concentrated nitric acid; the mass percentage concentration of the nitric acid is 59-65%.
The invention is further illustrated by the following more specific examples.
Example 1:
1) pre-cleaning of silicon wafer
Soaking the silicon wafer in a mixed solution of alkali liquor and hydrogen peroxide at the temperature of 45-60 ℃ for 120s, and then washing with water for 120 s; putting the silicon wafer after washing into a dilute acid solution, and soaking for 120s at normal temperature; then, the water washing is carried out for 180 s.
2) Texturing method
Putting the silicon wafer subjected to pre-cleaning and water washing in the step 1) into a pyramid rapid texturing solution, wherein the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein the concentration of silver nitrate is 0.01mmol/L, the concentration of copper nitrate is 100mmol/L, and the concentration of hydrofluoric acid is 4.8 mol/L; the concentration of hydrogen peroxide is 3.6 mol/L; the reaction temperature was 30 ℃ and the reaction time was 240 s.
3) Post-cleaning
Taking out the silicon wafer subjected to texturing in the step 2), and placing the silicon wafer in nitric acid with the mass percentage concentration of 59-65% to remove metal particles covered on the surface, wherein the reaction time is 180 s; and then washing with water to remove residual acid liquor on the surface, and drying with nitrogen. Thus, the textured silicon wafer with the surface composed of the pyramid structure is obtained, and the topographic map of the pyramid structure after texturing is shown in fig. 1, fig. 2 and fig. 3. As can be seen from the figure, the pyramid structure obtained finally is uniform in distribution and consistent in size, and the size of the pyramid structure is about 1-2 μm.
Example 2:
1) pre-cleaning of silicon wafer
The silicon wafer precleaning step in this embodiment is substantially the same as the silicon wafer precleaning step in step 1) in embodiment 1, and is not described herein again.
2) Texturing method
Putting the silicon wafer subjected to pre-cleaning and water washing in the step 1) into a pyramid rapid texturing solution, wherein the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein the concentration of silver nitrate is 0.001mmol/L, the concentration of copper nitrate is 100mmol/L, and the concentration of hydrofluoric acid is 7.0 mol/L; the concentration of hydrogen peroxide is 1.3 mol/L; the reaction temperature was 30 ℃ and the reaction time was 240 s.
3) Post-cleaning
The post-cleaning step of the silicon wafer in this embodiment is substantially the same as the post-cleaning step of step 3) in embodiment 1, and is not described herein again.
Compared with the embodiment 1, the concentration of silver nitrate is greatly changed, and under the condition that the concentration of copper nitrate is not changed, the silver induction effect is slightly poor due to the reduction of the concentration of silver nitrate, so that more hydrofluoric acid is needed to rapidly etch silicon dioxide generated in the catalysis process, the whole etching is accelerated, the pyramid structure can be formed in a short time, and the effective etching of the silicon wafer is completed. The final pyramid topography is shown in fig. 4 and 5, and the structure collapses to some extent due to the reduction of silver and the weakening of induction.
Example 3:
1) pre-cleaning of silicon wafer
The silicon wafer precleaning step in this embodiment is substantially the same as the silicon wafer precleaning step in step 1) in embodiment 1, and is not described herein again.
2) Texturing method
Putting the silicon wafer subjected to pre-cleaning and water washing in the step 1) into a pyramid rapid texturing solution, wherein the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein the concentration of silver nitrate is 0.1mmol/L, the concentration of copper nitrate is 150mmol/L, and the concentration of hydrofluoric acid is 4.8 mol/L; the concentration of hydrogen peroxide is 5.0 mol/L; the reaction temperature was 30 ℃ and the reaction time was 240 s.
3) Post-cleaning
The post-cleaning step of the silicon wafer in this embodiment is substantially the same as the post-cleaning step of step 3) in embodiment 1, and is not described herein again.
The concentrations of silver nitrate and copper nitrate were greatly changed in comparison with example 1. Due to the increase of the concentration of silver nitrate, the capacity of inducing the generation of the fluffy points is obviously enhanced, and due to the strong catalytic etching capacity of silver, if the concentration of copper nitrate is not increased, the catalytic etching of silver is led to form a nano structure. At the same time, the increase in the concentration of copper nitrate in the solution greatly accelerates the copper deposition rate, thus requiring more binocular water to maintain the balance of copper deposition and dissolution. The final pyramid topography is shown in fig. 6 and 7, and the whole reaction rate is accelerated due to the synchronous increase of metal ions in the solution, so that the size of the final pyramid structure is larger.
Example 4:
1) pre-cleaning of silicon wafer
The silicon wafer precleaning step in this embodiment is substantially the same as the silicon wafer precleaning step in step 1) in embodiment 1, and is not described herein again.
2) Texturing method
Putting the silicon wafer subjected to pre-cleaning and water washing in the step 1) into a pyramid rapid texturing solution, wherein the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein the concentration of silver nitrate is 0.01mmol/L, the concentration of copper nitrate is 10mmol/L, and the concentration of hydrofluoric acid is 5 mol/L; the concentration of hydrogen peroxide is 1.8 mol/L; the reaction temperature was 30 ℃ and the reaction time was 240 s.
3) Post-cleaning
The post-cleaning step of the silicon wafer in this embodiment is substantially the same as the post-cleaning step of step 3) in embodiment 1, and is not described herein again.
Compared with the embodiment 1, the concentration of copper nitrate is greatly changed, under the condition that silver nitrate is kept unchanged, the deposition of copper in the reaction process is slowed down due to the reduction of the concentration of copper nitrate, in order to maintain the deposition rate of copper to form a pyramid structure, more hydrofluoric acid is needed to rapidly etch silicon dioxide generated in the catalysis process, the whole etching process is accelerated, meanwhile, the dissolution rate of copper needs to be slowed down by reducing hydrogen peroxide in the solution, and the etching of the silicon wafer is finally completed by combining the above steps. The resulting pyramidal topography is shown in fig. 8 and 9.
Example 5:
1) pre-cleaning of silicon wafer
The silicon wafer precleaning step in this embodiment is substantially the same as the silicon wafer precleaning step in step 1) in embodiment 1, and is not described herein again.
2) Texturing method
Putting the silicon wafer subjected to pre-cleaning and water washing in the step 1) into a pyramid rapid texturing solution, wherein the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein the concentration of silver nitrate is 0.005mmol/L, the concentration of copper nitrate is 80mmol/L, and the concentration of hydrofluoric acid is 3.6 mol/L; the concentration of hydrogen peroxide is 0.9 mol/L; the reaction temperature was 30 ℃ and the reaction time was 480 s.
3) Post-cleaning
The post-cleaning step of the silicon wafer in this embodiment is substantially the same as the post-cleaning step of step 3) in embodiment 1, and is not described herein again.
In comparison with example 1, the concentrations of silver nitrate and hydrofluoric acid were greatly changed, and the reaction time was increased to 489 s. In order to maintain the deposition rate of copper to form a pyramid structure, the dissolution rate of copper needs to be slowed down by reducing hydrogen peroxide in the solution, and the etching of the silicon wafer is finally completed by combining the above steps. The resulting pyramidal topography is shown in fig. 10 and 11.
The surface reflectivity of the sample was measured using a Varian Cary 5000 Total reflection integrating sphere, as shown in FIG. 12. The average reflectivity is between 9% and 16%.
The rapid texturing liquid and the texturing method for the pyramid, disclosed by the invention, have the advantages of simple process, low cost, convenience in operation and wide application conditions, and can be used for obtaining the positive pyramid structure on a silicon wafer in a very short time under the room temperature condition. More importantly, the pyramid structure finally obtained by the pyramid rapid texturing liquid and the pyramid texturing method is uniform in distribution and relatively consistent in size, and the size range is 0.5-2 microns; in addition, the cross section clearly shows that the finally obtained pyramid structure is very smooth in transition and less than 2 microns in depth, so that the back polishing in the high-efficiency battery process is facilitated, and the battery efficiency of high-efficiency battery structures such as HIT and IBC can be further improved.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. In addition, although specific terms are used herein, they are used for convenience of description and do not limit the present invention in any way, and it is within the scope of the present invention to use the same or similar texturing fluids, methods and articles thereof.
Claims (10)
1. The pyramid rapid texturing liquid is characterized by comprising a silver ion source, a copper ion source, a fluoride ion source, an oxidant and deionized water, wherein the concentrations of the components are as follows: 0.001 mmol/L-0.5 mmol/L silver ion source; 1 mmol/L-200 mmol/L of copper ion source; 0.5-10 mol/L of fluoride ion source; the oxidant is 0.1 mol/L-8 mol/L.
2. The pyramid rapid texturing liquid according to claim 1, wherein the silver ion source is selected from one or more of silver nitrate, silver fluoride and silver sulfate.
3. The pyramid rapid texturing liquid according to claim 1, wherein the copper ion source is selected from one or more of copper nitrate, copper sulfate and copper chloride.
4. The pyramid rapid texturing liquid according to claim 1, wherein the fluoride ion source is hydrofluoric acid; the oxidizing agent is capable of oxidizing silicon in the silicon wafer to silicon oxide and copper to copper ions.
5. A pyramid texturing method is characterized by comprising the following steps:
(1) preparing the pyramid rapid texturing solution of any one of claims 1 to 4;
(2) preparing a silicon wafer;
(3) placing the silicon wafer in the pyramid rapid texturing liquid, etching for a certain time at a preset temperature, and texturing the silicon wafer to obtain a silicon wafer with pyramid texturing on the surface;
the steps (1) and (2) are not in sequence.
6. Pyramid texturing method according to claim 5, characterized in that said step (2) comprises in particular the steps of:
(2.1) prewashing: soaking the prepared silicon wafer in a mixed solution of alkali liquor and hydrogen peroxide for a certain time, and then washing with water to remove the alkali liquor carried on the surface;
(2.2) water washing: and (3) placing the pre-washed silicon wafer into an acid solution, soaking for a certain time to remove alkali liquor remaining on the surface of the silicon wafer, and then placing the silicon wafer into water to remove acid liquor carried on the surface.
7. The pyramid texturing method of claim 5, wherein the predetermined temperature in step (3) is 20 ℃ to 40 ℃ and the etching time is 60s to 360 s.
8. The pyramidal texturing method of claim 5, further comprising the steps of:
(4) placing the silicon wafer with the pyramid texture surface in pickling solution, soaking for 120-180 s, then washing with water, removing residual acid solution on the surface, and drying with nitrogen; the acid adopted in the pickling solution is concentrated nitric acid; the mass percentage concentration of the nitric acid is 59-65%.
9. A silicon wafer having a texturizing surface, wherein the texturizing surface has been texturized using the pyramidal texturizing method of any one of claims 5 to 9, and wherein the texturizing surface comprises pyramidal structures of relatively uniform size, uniform and independently distributed.
10. The silicon wafer of claim 9, wherein the bottom of the pyramid structure is a quadrangle, and the length of the quadrangle is 0.5 μm to 2 μm; the height of the pyramid structure is 0.5-2 μm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823951A (en) * | 2022-06-28 | 2022-07-29 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
| CN115224137A (en) * | 2022-06-21 | 2022-10-21 | 浙江晶科能源有限公司 | Semiconductor substrate, solar cell and photovoltaic module |
| WO2023080863A1 (en) * | 2021-11-08 | 2023-05-11 | Odtü Güneş Enerji̇si̇ Uygulama Ve Araştirma Merkezi̇ | Method of texturing the monocrystalline silicon wafer surface at room temperature |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195645A (en) * | 2014-08-06 | 2014-12-10 | 中国科学院物理研究所 | Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer |
| CN105405755A (en) * | 2015-10-30 | 2016-03-16 | 中国科学院物理研究所 | Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method |
| CN106229386A (en) * | 2016-10-14 | 2016-12-14 | 南京航空航天大学 | A kind of method that silver-bearing copper bimetallic MACE method prepares black silicon structure |
| CN106340446A (en) * | 2016-10-14 | 2017-01-18 | 南京航空航天大学 | Method for removing surface line marks of diamond linear cutting polycrystalline silicon chip through wet method |
| CN106653889A (en) * | 2017-01-25 | 2017-05-10 | 北京普扬科技有限公司 | Texturing liquid for etching surface of solar cell silicon wafer and application thereof |
| CN107919275A (en) * | 2017-11-16 | 2018-04-17 | 北京普扬科技有限公司 | A kind of silicon chip that room temperature etching method and its making herbs into wool form, solar battery sheet and preparation method thereof |
| CN108054238A (en) * | 2017-12-06 | 2018-05-18 | 江苏辉伦太阳能科技有限公司 | A kind of method that chain type wet chemistry method prepares the black silicon of controlled architecture polycrystalline |
| CN110707001A (en) * | 2018-07-10 | 2020-01-17 | 中国科学院物理研究所 | Method for texturing silicon wafer by repeatedly utilizing black silicon cleaning solution |
-
2019
- 2019-08-28 CN CN201910804426.5A patent/CN112442739B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195645A (en) * | 2014-08-06 | 2014-12-10 | 中国科学院物理研究所 | Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer |
| CN105405755A (en) * | 2015-10-30 | 2016-03-16 | 中国科学院物理研究所 | Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method |
| CN106229386A (en) * | 2016-10-14 | 2016-12-14 | 南京航空航天大学 | A kind of method that silver-bearing copper bimetallic MACE method prepares black silicon structure |
| CN106340446A (en) * | 2016-10-14 | 2017-01-18 | 南京航空航天大学 | Method for removing surface line marks of diamond linear cutting polycrystalline silicon chip through wet method |
| CN106653889A (en) * | 2017-01-25 | 2017-05-10 | 北京普扬科技有限公司 | Texturing liquid for etching surface of solar cell silicon wafer and application thereof |
| CN107919275A (en) * | 2017-11-16 | 2018-04-17 | 北京普扬科技有限公司 | A kind of silicon chip that room temperature etching method and its making herbs into wool form, solar battery sheet and preparation method thereof |
| CN108054238A (en) * | 2017-12-06 | 2018-05-18 | 江苏辉伦太阳能科技有限公司 | A kind of method that chain type wet chemistry method prepares the black silicon of controlled architecture polycrystalline |
| CN110707001A (en) * | 2018-07-10 | 2020-01-17 | 中国科学院物理研究所 | Method for texturing silicon wafer by repeatedly utilizing black silicon cleaning solution |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023080863A1 (en) * | 2021-11-08 | 2023-05-11 | Odtü Güneş Enerji̇si̇ Uygulama Ve Araştirma Merkezi̇ | Method of texturing the monocrystalline silicon wafer surface at room temperature |
| CN115224137A (en) * | 2022-06-21 | 2022-10-21 | 浙江晶科能源有限公司 | Semiconductor substrate, solar cell and photovoltaic module |
| CN115224137B (en) * | 2022-06-21 | 2023-09-15 | 浙江晶科能源有限公司 | Semiconductor substrate, solar cell and photovoltaic module |
| CN114823951A (en) * | 2022-06-28 | 2022-07-29 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
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|---|---|
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