CN112439658A - Spraying method for wafer-level sensitive material and semiconductor sensor - Google Patents
Spraying method for wafer-level sensitive material and semiconductor sensor Download PDFInfo
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- CN112439658A CN112439658A CN202011215050.3A CN202011215050A CN112439658A CN 112439658 A CN112439658 A CN 112439658A CN 202011215050 A CN202011215050 A CN 202011215050A CN 112439658 A CN112439658 A CN 112439658A
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- spraying method
- sensitive material
- wafer
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- 239000000463 material Substances 0.000 title claims abstract description 62
- 238000005507 spraying Methods 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000007921 spray Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000002243 precursor Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000002086 nanomaterial Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000002114 nanocomposite Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims 2
- 230000004048 modification Effects 0.000 abstract description 9
- 238000012986 modification Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000012858 packaging process Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 3
- 239000011540 sensing material Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 238000007630 basic procedure Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
- B05D2203/35—Glass
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
A spraying method of a wafer-level sensitive material and a semiconductor sensor comprises the steps of aligning openings on a prepared mask plate with a sensitive area of a substrate; injecting a precursor solution of a sensitive material to be coated onto a spray head; setting operating parameters of the spray head; aligning the spray head to the mask plate and starting spraying; and separating the mask plate from the substrate after the spraying is finished to obtain the wafer-level sensitive material. The invention adopts a high-precision mask and combines a large-area spraying method, so that the wafer-level uniform modification and fixation of the nano gas-sensitive material can be realized; by adopting a spraying method, the film forming thickness of the sensitive material can be accurately controlled by calculating the spraying time; by adopting the high-precision mask technology, the non-sensitive area can be perfectly protected from being polluted by sensitive materials to influence the subsequent packaging process, so that the method disclosed by the invention is perfectly compatible with the subsequent process.
Description
Technical Field
The invention belongs to the field of sensors, and particularly relates to a spraying method of a wafer-level sensitive material and a semiconductor sensor.
Background
The miniature Metal Oxide Semiconductor (MOS) sensor based on the nano sensitive material is a sensor with small volume, low power consumption, high sensitivity, low price and better selectivity. The sensor has low price and wide gas detection range (corresponding sensitive membranes can be selected according to gas components to realize detection of various gases), and is widely applied in the fields of toxic gas monitoring in industrial parks, exhaust emission monitoring of industrial boilers and automobiles, toxic and harmful gas monitoring released by furniture and building materials and the like.
However, the modification and fixation of the sensitive material of the existing metal oxide detector are not wafer-level, and the basic procedure is that after a single micro-hotplate is prepared, the sensitive material is fixed on the sensitive area on the surface of the micro-hotplate by using a spotting instrument. The method can not only solve the problem of mass production and cause high cost, but also has poor performance consistency of each sensor prepared by the method.
Disclosure of Invention
It is therefore one of the primary objectives of the claimed invention to provide a method for spraying wafer-level sensitive material and semiconductor sensor, so as to at least partially solve at least one of the above-mentioned problems.
In order to achieve the above object, as an aspect of the present invention, there is provided a method for spraying a wafer-level sensitive material, comprising:
aligning the openings on the prepared mask plate with the sensitive area of the substrate;
injecting a precursor solution of a sensitive material to be coated onto a spray head;
setting operating parameters of the spray head;
aligning the spray head to the mask plate and starting spraying;
and separating the mask plate from the substrate after the spraying is finished to obtain the wafer-level sensitive material.
As another aspect of the present invention, there is also provided a method for spraying a wafer-level sensitive material and a semiconductor sensor, wherein the semiconductor sensor is provided with a plurality of different sensitive areas, and the method for spraying includes the step of respectively spraying each sensitive area by using the above-mentioned spraying method.
Based on the technical scheme, the wafer-level sensitive material and the spraying method thereof have at least one of the following advantages compared with the prior art:
1. the wafer-level uniform modification and fixation of the nano gas-sensitive material can be realized by adopting a high-precision mask and combining a large-area spraying method;
2. by adopting a spraying method, the film forming thickness of the sensitive material can be accurately controlled by calculating the spraying time;
3. by adopting the high-precision mask technology, the non-sensitive area can be perfectly protected from being polluted by sensitive materials to influence the subsequent packaging process, so that the method disclosed by the invention is perfectly compatible with the subsequent process.
Drawings
FIG. 1 is a schematic diagram of wafer level sensitive material spraying according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an explosion structure for spraying wafer-level sensitive material according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a micro MOS sensor according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a mask structure of the 3-S1 sensitive area in the CMOS sensor according to an embodiment of the present invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Aiming at the technical problem of poor consistency of modification and fixation of sensitive materials, the invention provides a wafer-level sensitive material spraying method, which can accurately control the thickness of a sensitive film while realizing the wafer-level modification and fixation of the sensitive materials and realize perfect compatibility with subsequent processes.
The invention discloses a spraying method of a wafer-level sensitive material, which comprises the following steps:
aligning the openings on the prepared mask plate with the sensitive area of the substrate;
injecting a precursor solution of a sensitive material to be coated onto a spray head;
setting operating parameters of the spray head;
aligning the spray head to the mask plate and starting spraying;
and separating the mask plate from the substrate after the spraying is finished to obtain the wafer-level sensitive material.
In some embodiments of the invention, the operating parameters of the spray head include spray speed of the spray head, spray rotational speed of the spray head, and spray time.
In some embodiments of the present invention, the thickness of the sensitive material in the sensitive area of the wafer level sensitive material is controlled by the spraying time.
In some embodiments of the present invention, the spraying method further comprises aging the resulting wafer-level sensitive material.
In some embodiments of the present invention, the opening of the mask is attached to the sensitive region of the silicon substrate.
In some embodiments of the present invention, the position and the size of the opening on the mask are completely consistent with the sensitive area on the substrate.
In some embodiments of the invention, the sensing material comprises at least one of a metal oxide nanomaterial, a carbon nanomaterial, or an organic-inorganic nanocomposite material;
in some embodiments of the invention, the sensitive material is sensitive to a gas.
In some embodiments of the present invention, the metal oxide nanomaterial is a multi-component or composite nanomaterial synthesized using zinc oxide, titanium dioxide, or tin dioxide as a base material.
In some embodiments of the invention, the substrate comprises at least one of a silicon substrate, a ceramic substrate, or a glass substrate.
The invention also discloses a spraying method of the semiconductor sensor, the semiconductor sensor is provided with a plurality of different sensitive areas, and the spraying method comprises the following steps:
each sensitive area is separately sprayed using the spraying method described above.
The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
Referring to fig. 1-2, the embodiment discloses a spraying method of a wafer-level sensitive material, which includes the following steps:
(1) the sensitive material 2 to be coated is prepared into a corresponding precursor solution and then injected into the spray head 1.
The nano-sensitive material 2 may be selected from, but not limited to, metal oxide nano-materials such as zinc oxide, titanium dioxide, tin dioxide, etc., carbon nano-materials such as graphene, carbon nanotubes, etc., and organic-inorganic nano-composite materials.
(2) Aligning and closely attaching the prepared mask plate 4 (the position and the area of the window are completely consistent with the position and the area of the substrate needing to fix the sensitive material) to the sensitive area of the silicon substrate 5;
(3) after the spraying speed of the spray head 1 and the rotating speed of the spray head are adjusted, the spraying time is accurately calculated;
(4) and opening the spray head 1, spraying the sensitive materials 2 on the mask plate 4 and the silicon substrate 5 right below, and separating the mask plate 4 from the surface of the silicon substrate 5 after spraying is finished, so that a layer of uniform sensitive materials 2 is modified and fixed in an area where the sensitive materials are required to be fixed on the surface of the silicon substrate 5.
(5) And aging the sensitive material 2 on the surface of the silicon substrate 5 to form a surface layer with firm adhesion, completing the spraying of the wafer-level sensitive material, and preparing for a subsequent bonding packaging process.
Wherein, adopt half etching process with the regional attenuate of trompil of mask plate 4 to the thickness that laser can pierce through, then exert tension around mask plate 4, make surfacing to weld the mask plate on the mask frame, later cut out the trompil of mask plate demand with laser, utilize the characteristic that laser beam diameter of laser cutting can reach 1 micron to the trompil of mask base plate, improve the trompil precision of mask plate and the position accuracy of trompil, can prepare out high accuracy mask plate. The prepared high-precision mask is combined with a large-area spraying technology, wafer-level modification and fixation of sensitive materials can be realized, the consistency of film formation is good, and the thickness can be accurately controlled. The position and size of the opening (or window) on the mask are completely consistent with those of the sensitive region of the chip on the silicon substrate, and the explosion diagram is shown in fig. 2.
The mask 4 may be processed by a glass substrate, or may be a silicon wafer or a substrate made of other materials, and in this embodiment, a glass substrate is preferred. In the spraying process, the mask plate 4 can be directly and closely attached to the underlying silicon substrate 5 (the substrate on which the sensitive material needs to be coated) or have a certain distance from the underlying silicon substrate 5, but in any case, each through hole on the mask plate 4 needs to be accurately aligned with a sensitive area on the silicon substrate chip, and a close attachment mode is preferred in the project.
In other implementations of the present invention, a spraying method of a micro metal oxide semiconductor sensor is also disclosed, in which the sensing unit of the micro metal oxide semiconductor sensor may be an array structure, that is, the micro metal oxide semiconductor sensor has a plurality of sensing units, and each sensing unit may be decorated with different sensing materials. As shown in fig. 3-4, the cmos sensor is composed of 4 sensing units S1, S2, S3 and S4, 6-S1 is the opening of the mask corresponding to the sensing area of 3-S1, 7 is the micro-hotplate, 8 is the electrode, E1, E2, E3 and E4 are four interdigital electrodes with the same structure for generating capacitance related to the electric field that can penetrate the material sample and the sensing coating, Hot-P1, Hot-P2, Hot-P3 and Hot-P4 are four heating electrodes for generating the temperature required for the sensing material to reach the optimal chemical activity. For the sensor with the array structure, the modification and fixation steps of the wafer-level sensitive material are as follows: firstly, determining the number of array units and the type of modified sensitive materials; then preparing a mask plate, wherein the modification and the fixation of each sensitive material need a special mask plate (the through hole positions of the mask plate correspond to the modified and fixed sensitive units one by one); and the mask plate corresponding to the sensitive unit is applied to modify a certain sensitive unit.
The thickness of the sensitive film of the micro metal oxide semiconductor sensor is accurately controlled by the spraying time.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A spraying method of wafer-level sensitive materials comprises the following steps:
aligning the openings on the prepared mask plate with the sensitive area of the substrate;
injecting a precursor solution of a sensitive material to be coated onto a spray head;
setting operating parameters of the spray head;
aligning the spray head to the mask plate and starting spraying;
and separating the mask plate from the substrate after the spraying is finished to obtain the wafer-level sensitive material.
2. The spraying method according to claim 1,
the spray head operation parameters comprise spray head spray speed, spray head rotation speed and spray time.
3. The spraying method according to claim 1,
the thickness of the sensitive material in the sensitive area of the wafer-level sensitive material is controlled by the spraying time.
4. The spraying method according to claim 1,
the spraying method further comprises the step of aging the obtained wafer-level sensitive material.
5. The spraying method according to claim 1,
and the open hole of the mask plate is attached to the sensitive area of the silicon substrate.
6. The spraying method according to claim 1,
the position and the size of the opening on the mask plate are completely consistent with those of the sensitive area on the substrate.
7. The spraying method according to claim 1,
the sensitive material comprises at least one of a metal oxide nanomaterial, a carbon nanomaterial or an organic-inorganic nanocomposite material;
the sensitive material is sensitive to a certain gas.
8. The spraying method according to claim 7,
the metal oxide nano material is a multi-element or composite nano material synthesized by taking zinc oxide, titanium dioxide or tin dioxide as a base material.
9. The spraying method according to claim 1,
the substrate includes at least one of a silicon substrate, a ceramic substrate, or a glass substrate.
10. A method of painting a semiconductor sensor, the semiconductor sensor having a plurality of distinct sensitive areas, the painting method comprising:
each sensitive area is separately sprayed by the spraying method according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011215050.3A CN112439658A (en) | 2020-11-04 | 2020-11-04 | Spraying method for wafer-level sensitive material and semiconductor sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011215050.3A CN112439658A (en) | 2020-11-04 | 2020-11-04 | Spraying method for wafer-level sensitive material and semiconductor sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112439658A true CN112439658A (en) | 2021-03-05 |
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| CN202011215050.3A Pending CN112439658A (en) | 2020-11-04 | 2020-11-04 | Spraying method for wafer-level sensitive material and semiconductor sensor |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001145844A (en) * | 1999-11-22 | 2001-05-29 | Ricoh Co Ltd | Mask for film-forming by spraying superfine particle and method for fixing mask and substrate to apparatus body |
| US20080248205A1 (en) * | 2007-04-05 | 2008-10-09 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate using a mask material |
| CN102608203A (en) * | 2012-02-16 | 2012-07-25 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip sensitive membrane for gas detection |
| CN104532183A (en) * | 2015-01-26 | 2015-04-22 | 深圳市华星光电技术有限公司 | Manufacturing method of high-precision mask |
| CN106568812A (en) * | 2016-11-09 | 2017-04-19 | 西安交通大学 | Preparation method of gas sensor used for detection of isoprene gas |
| US20170176370A1 (en) * | 2015-12-17 | 2017-06-22 | Massachusetts Institute Of Technology | Graphene oxide sensors |
| CN109379848A (en) * | 2018-11-23 | 2019-02-22 | 江苏集萃微纳自动化系统与装备技术研究所有限公司 | The manufacturing method of novel flexible printed circuit |
| CN111384303A (en) * | 2018-12-28 | 2020-07-07 | Tcl集团股份有限公司 | Preparation method of film layer and quantum dot light-emitting diode |
| CN111398364A (en) * | 2020-04-29 | 2020-07-10 | 中国科学院空天信息创新研究院 | High-selectivity array MOS sensor and preparation method thereof |
-
2020
- 2020-11-04 CN CN202011215050.3A patent/CN112439658A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001145844A (en) * | 1999-11-22 | 2001-05-29 | Ricoh Co Ltd | Mask for film-forming by spraying superfine particle and method for fixing mask and substrate to apparatus body |
| US20080248205A1 (en) * | 2007-04-05 | 2008-10-09 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate using a mask material |
| CN102608203A (en) * | 2012-02-16 | 2012-07-25 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip sensitive membrane for gas detection |
| CN104532183A (en) * | 2015-01-26 | 2015-04-22 | 深圳市华星光电技术有限公司 | Manufacturing method of high-precision mask |
| US20170176370A1 (en) * | 2015-12-17 | 2017-06-22 | Massachusetts Institute Of Technology | Graphene oxide sensors |
| CN106568812A (en) * | 2016-11-09 | 2017-04-19 | 西安交通大学 | Preparation method of gas sensor used for detection of isoprene gas |
| CN109379848A (en) * | 2018-11-23 | 2019-02-22 | 江苏集萃微纳自动化系统与装备技术研究所有限公司 | The manufacturing method of novel flexible printed circuit |
| CN111384303A (en) * | 2018-12-28 | 2020-07-07 | Tcl集团股份有限公司 | Preparation method of film layer and quantum dot light-emitting diode |
| CN111398364A (en) * | 2020-04-29 | 2020-07-10 | 中国科学院空天信息创新研究院 | High-selectivity array MOS sensor and preparation method thereof |
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Application publication date: 20210305 |
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