CN112435920B - Long wavelength laser annealing method and device - Google Patents
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
The invention discloses a long wavelength laser annealing method and device, and belongs to the technical field of laser annealing in the semiconductor industry. The laser annealing method is characterized in that the wafer is annealed by utilizing the laser output of a pulse signal, and the laser in the long-wavelength laser annealing method specifically adopts a semiconductor laser source with long wavelength; the spot size with the length of 1-10mm and the width of 30-500um is taken as the spot size for practical application; the power density P during annealing is in the range of 200-5000kW/cm 2 . The annealing device comprises a system control unit, a laser, an optical system, a slide holder and a chuck. The scheme of the invention can replace the currently commonly used solid laser, greatly reduce the research and development and production cost, and can provide a process matching solution for meeting various annealing requirements aiming at the requirements of different device types and different depth impurity distributions in the production of semiconductor devices.
Description
Technical Field
The invention particularly relates to a long wavelength laser annealing method and device, and belongs to the technical field of laser annealing in the semiconductor industry.
Background
When manufacturing semiconductor chips, ion implantation is performed on the back of the wafer of some devices, the step causes serious damage to the crystal lattice, doped impurity ions are not located at the correct lattice positions, so that the doped impurity ions do not have effective electrical activity, and at the moment, the material needs to be subjected to heating treatment to repair the lattice damage, and the impurity electrical activity is activated at the same time, and the heating treatment process is annealing.
Conventionally used annealing processes, including furnace annealing, flash annealing (FLA, flash Lamp Annealing), spike annealing (SpikeAnnealing), and the like, cannot well activate impurities due to the disadvantages of low annealing temperature, long annealing time, and the like, and tend to cause unnecessary impurity re-diffusion, so that defects caused by such impurity distribution re-diffusion become more and more problems to be solved as the device size is gradually reduced.
Laser pulse annealing refers to a process method for annealing a material by using laser output of a pulse signal. Due to the advantages of high instantaneous temperature, short acting time, low thermal budget and the like, the laser pulse annealing can well meet the process requirements of efficient activation. In particular, for the new generation IGBT devices, since the electric field stop (FieldStop) technology is adopted, the substrate can be ground to be very thin to reduce on-state loss, the thickness of a typical wafer is 100-200 μm, more advanced designs even require the use of ultra-thin sheets below 70 μm, and when back annealing is performed on such sheets/ultra-thin sheets, in order to ensure that aluminum on the front side of the device cannot be melted due to high temperature, the process temperature must be controlled within 450 ℃, and the annealing time can be controlled on the order of microseconds by adopting laser annealing, so that the effective temperature control on the front side of the wafer is ensured, and in this case, laser pulse annealing is almost the only scheme for obtaining high annealing performance.
However, due to the limitation of the size of the laser spot, if annealing is to be performed on the back surface of the whole wafer, a relative motion must be generated between the spot of the laser and the wafer, and as time goes by, the laser scans along the width direction of the spot, steps along the length direction, until the moving trace covers the back surface of the whole wafer. Because of the requirement of process performance, no laser scanning mode allows the occurrence of void (unseen) or uneven activation, and even a small annealing abnormal area can cause the non-uniformity of the device performance of different chips on the same wafer for the modern integrated circuit multi-transistor device, thereby causing the failure of the laser annealing process.
The equipment system adopted by the laser pulse annealing comprises the following main core modules:
(1) An optical system for annealing and optical path transmission;
(2) A chuck for carrying a wafer;
(3) The slide holder is used for driving the chuck and the wafer to move;
after the original light beam output by the laser is shaped by a specific precise optical system, the shaped linear spot is projected onto the surface of the wafer by a lens, and the chuck and the wafer are driven by a carrying platform to perform stepping and progressive scanning movement until the whole wafer is scanned, so that the laser annealing of the whole wafer is realized.
In the prior art, most of the technical proposal adopts a solid laser or a mode that the solid laser is matched with a semiconductor laser for use, the required research and development and maintenance cost of the solid laser is higher, the wavelength of most of the solid laser is shorter, the heating of the deeper part of a wafer is difficult, the use of the semiconductor long wavelength laser is required to be assisted, the requirement on the path design and the system stability is very high, and the cost input of equipment is further larger.
Disclosure of Invention
Therefore, the invention provides a laser annealing system, an annealing method and a device adopting a single-wavelength semiconductor laser, which can realize the annealing effects of complete solid-phase activation, micro-melting activation and large-depth melting activation by adjusting laser parameters to perform heat treatment on the surface and controlling an annealing temperature field, and can greatly reduce the production cost because a plurality of annealing effects can be realized on one device.
Compared with the short wavelength (200 nm-560 nm) solid laser, the long wavelength (780 nm-1064 nm) semiconductor laser can be used for directly heating a region with deeper absorption depth by using the long wavelength laser, for example, 515nm laser is taken as an example, the absorption depth Lα is 0.79um at room temperature (300K), the absorption depth Lα is suddenly reduced to 0.16um at 1000K, the absorption depth Lα is 0.12um at 1400K, and the absorption depth Lα is 0.08um at 1600K; when the laser with the wavelength of 808nm is acted, the absorption depth Lalpha at room temperature (300K) is 10.7um, the temperature is raised to 1000K, the absorption depth is still 2.1um, the absorption depth Lalpha is 0.47um at 1400K, and the absorption depth Lalpha is 0.32um at 1600K. Therefore, the change of the absorption depth of the semiconductor laser can be controlled by adjusting the power density and the pulse width of the semiconductor laser, so that the temperature gradient in the depth direction of the wafer in the processing process is controlled, and on one hand, the slower temperature gradient can be realized to meet the requirement of deeper solid activation; on the one hand, a steeper temperature gradient can be achieved with a lower thermal budget to meet the melting requirements of the surface to some extent.
The specific technical scheme is as follows:
a long wavelength laser annealing method, utilize laser output of the pulse signal to carry on the annealing treatment to the wafer, the laser in the said long wavelength laser annealing method specifically, adopt the semiconductor laser light source of long wavelength; the spot size with the length of 1-10mm and the width of 30-500um is taken as the spot size for practical application; the power density P during annealing is in the range of 200-5000kW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Thereby, the annealing effects of solid-phase activation, micro-melting activation and large-depth melting activation are simultaneously realized by using long-wavelength laser.
Preferably, the method specifically comprises the following steps: the system control unit controls the overall time sequence of the laser and the synchronous movement of the laser and the slide holder, and is in the form of a pulse generator;
the laser beam generated by the laser is projected onto the surface of the wafer in the form of linear spots through the optical system, the chuck and the wafer are driven by the slide holder to perform back and forth scanning and stepping movement, and finally the laser beam covers the whole wafer, so that the whole process of laser annealing is completed.
Preferably, in the method, in spatial distribution, an optical system performs the functions of beam transformation, homogenization, synthesis and projection from an original beam of a light source to a target linear spot, and the linear spot is shaped from an original circular light spot into a linear spot which is relatively uniform in the length direction and relatively narrow in the width direction.
Preferably, the light intensity distribution of the linear spot in the method is mainly in two forms: the first form is a length-direction flat top distribution and a width-direction Gaussian distribution; the second form is a length-direction flat-top distribution and a width-direction flat-top distribution.
Preferably, in the method, the laser pulses are output with energy at a repetition rate f over a temporal distribution.
Preferably, the wavelength of the semiconductor laser light source in the method is 808-1064nm. The wavelength has stronger penetrability, can be used for activating impurity ions in deeper layers, and has small change (about 0.1 at maximum) of the light absorption coefficient of silicon (wafer) in a wavelength range, so that the influence of the wavelength change on other performances of the silicon wafer during annealing is negligible.
On the other hand, the long wavelength laser annealing device provided by the invention comprises a system control unit, a laser, an optical system, a carrying platform and a chuck, wherein the system control unit is in a pulse generator mode, the system control unit is used for controlling the overall time sequence of the laser and the synchronous movement of the laser and the carrying platform, and the carrying platform is used for driving a wafer on the chuck to perform back and forth scanning and stepping movement.
The invention has the beneficial effects that: compared with the prior art, the long wavelength laser annealing method and the device have the following advantages:
1) Because the single long wavelength laser can realize the annealing effects of complete solid phase activation, micro-melting activation and large-depth melting activation, multiple annealing effects can be realized on one device, and the production cost can be greatly reduced;
2) Because only a single wavelength laser is adopted, the design and control program of the optical path of the equipment are simplified, and the process stability of the equipment is higher;
3) The semiconductor laser with relatively low price can replace the solid laser with high price in the market, so that the purchase and maintenance cost is greatly reduced;
4) According to the invention, because of the simplification of a laser system, the requirements on electric control and software are also reduced, and the stability of the whole system in the annealing process can be improved.
Drawings
FIG. 1 is a schematic diagram of a laser annealing system;
FIG. 2a is a schematic diagram of a length-wise flat top distribution and width-wise Gaussian distribution linear specks;
FIG. 2b is a schematic diagram of a lengthwise flat-top distribution, widthwise flat-top distribution wiring pattern;
FIG. 3 is a schematic diagram of the laser pulse output timing;
FIG. 4 is a schematic diagram of the FS-IGBT device structure;
FIG. 5 is a schematic diagram of an RC-IGBT device structure;
FIG. 6 is a temperature field corresponding to example 2;
FIG. 7 is a temperature field corresponding to example 3;
FIG. 8 is the temperature field corresponding to example 4;
FIG. 9 is the temperature field corresponding to example 5;
FIG. 10 is a temperature field corresponding to example 6;
FIG. 11 is a temperature field corresponding to example 7;
FIG. 12 is a temperature field corresponding to example 8;
FIG. 13 is a temperature field corresponding to example 9;
FIG. 14 is a graph of thermal budget Tb1 wafer temperature gradients;
FIG. 15 is a graph of thermal budget Tb2 wafer temperature gradients;
FIG. 16 is a surface heat of fusion budget map.
Detailed Description
The following describes specific embodiments of the present invention with reference to the drawings:
example 1
The invention provides a laser annealing system and an annealing method of a single-wavelength semiconductor laser, wherein the system structure is shown in figure 1:
the laser preheating annealing system is characterized in that the system control unit 1 controls the overall time sequence of the laser 2 and the synchronous movement of the laser 2 and the slide table 7, and the system control unit 1 is in the form of a pulse generator.
The laser beam 4 is projected onto the surface of the wafer 5 in a linear spot mode through the optical system 3, the chuck 6 and the wafer 5 are driven by the carrying platform 7 to perform back and forth scanning and stepping movement, and finally the laser beam covers the whole wafer, so that the whole process of laser annealing is completed.
In the spatial distribution, the optical system 3 performs the functions of beam transformation, homogenization, synthesis and projection from the original beam of the light source to the target spot, and shapes the beam spot from the original circular spot into a uniform Width (Width) square in the Length directionA linear spot of a narrow upward dimension, the light intensity of the linear spot (I 0 ) The distribution is mainly in two forms, as shown in fig. 2a and 2 b: (1) Flat top distribution in the length direction and Gaussian distribution in the width direction; (2) A length-direction flat top distribution, a width-direction flat top distribution;
in the time distribution, the laser pulse is output at the repetition frequency f, the output signal is shown in fig. 3, the ordinate is the power density P (W), one pulse period time is T (t=1/f), the single pulse width is PW, the range of PW is 0-T, and when pw=t, the laser is a continuous light output. In practice, it is preferable that f is 0 to 20kHz.
The FS-IGBT and RC-IGBT device structures are shown in fig. 4 and 5, the N-stop layer with lower injection concentration and the collector region with higher injection concentration and shallower injection are annealed, and the N-stop layer with deeper injection has the maximum annealing depth of 10um, and the lower concentration meets the temperature above 1100K, so that the impurity activation can be realized; for shallow collector regions, the annealing depth is typically within 2um, due to its higher concentration, especially the bulk concentration approaching 1E20atoms/cm 3 It is difficult to achieve complete solid state activation and it is necessary to partially melt or completely melt the collector region implant region to complete activation by having a partial region temperature exceeding the silicon wafer melting point 1685K.
A semiconductor laser light source of 808nm wavelength is preferred in view of the actual laser power and yield requirements; the preferable Length is 1-10mm, and the spot size with Width of 30-1000um is the spot size for practical application; the spot size of the simulation experiment is selected to be length=4mm, width=120um (Gaussian distribution), the wafer thickness of the simulation experiment is 100um, 4 groups of power density parameters P1, P2, P3 and P4 (P1 is less than P2 is less than P3 is less than P4) are selected, and the unit is kW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the 2 sets of thermal budget parameters Tb1, tb2 (Tb 1 < Tb 2), in J/cm 2 The following 8 simulation experiments were performed.
Example 2
The 808nm laser is adopted, the power density P1, the total thermal budget is Tb1, the pulse time PW1=Tb1/P1, the simulation experiment wafer temperature field 1 is as shown in fig. 6, after one pulse acts, the highest surface temperature reaches 1300K, no melting occurs, the activation depth of N-stop with low concentration above 1100K reaches 4um, after the pulse PW1 is ended, the temperature starts to be reduced, according to the time sequence relation, the surface starts to be heated again until the next pulse comes, and the temperature is raised and reduced according to the time period T;
example 3
The 808nm laser is adopted, the power density P1, the total thermal budget Tb2 and the pulse time PW2=Tb2/P1 are adopted, the simulation experiment wafer temperature field 2 is as shown in figure 7, after one pulse acts, the highest surface temperature reaches 1500K, no melting occurs, the activation depth of N-stop with low concentration above 1100K reaches 7.7um, after the pulse PW2 is ended, the temperature starts to be reduced, according to the time sequence relation, the surface starts to be heated again until the next pulse comes, and the temperature is raised and reduced according to the time period T;
example 4
The 808nm laser is adopted, the power density P2, the total thermal budget Tb1 and the pulse time PW3=Tb1/P2 are adopted, the simulation experiment wafer temperature field 3 is as shown in figure 8, after one pulse acts, the highest surface temperature reaches 1690K, the surface is over the melting transition temperature 1685K, micro melting is generated on the surface, the melting depth is 0.1um, the activation depth of low concentration N-stop above 1100K reaches 7um, after the pulse PW3 is ended, the temperature begins to be reduced, the temperature begins to rise again according to the time sequence relation until the next pulse comes, and the temperature rises and drops according to the time period T;
example 5
The 808nm laser is adopted, the power density P2, the total thermal budget Tb2 and the pulse time PW 4=Tb2/P2 are adopted, the simulation experiment wafer temperature field 4 is as shown in figure 9, after one pulse acts, the highest surface temperature reaches 1700K, the surface is higher than the melting transition temperature 1685K, the surface is melted, the melting depth is 0.5um, the activation depth of low concentration N-stop above 1100K is higher than 8um, the activation depth reaches 9um, after the pulse PW4 is ended, the temperature begins to be reduced, according to the time sequence relation, the surface begins to be heated again until the next pulse comes, and the temperature is raised and reduced according to the time period T;
example 6
The method comprises the steps of adopting a 808nm laser, a power density P3, a total thermal budget Tb1, a pulse time PW5=Tb1/P3, simulating an experimental wafer temperature field 5 as shown in fig. 10, enabling the highest surface temperature to reach 1740K after one pulse action, exceeding a melting transition temperature 1685K, enabling the surface to be melted, enabling the activation depth of low-concentration N-stop to be 6.4um, enabling the temperature to be reduced after the pulse PW5 is ended, enabling the surface to be heated again according to a time sequence relation until the next pulse arrives, and enabling the surface to be heated and cooled according to a time period T;
example 7
The method comprises the steps of adopting a 808nm laser, a power density P3, a total thermal budget Tb2, a pulse time PW6=Tb2/P3, simulating an experimental wafer temperature field 6 as shown in fig. 11, enabling the highest surface temperature to reach 1820K after one pulse action, exceeding a melting transition temperature 1685K, enabling the surface to be melted, enabling the activation depth of low-concentration N-stop above 1100K to be 8.2um, starting to cool after the pulse PW6 is ended, and enabling the surface to be warmed up again according to a time sequence relation until the next pulse arrives, wherein the temperature is raised and lowered according to a time period T;
example 8
The method comprises the steps of adopting a 808nm laser, a power density P4, a total thermal budget Tb1, a pulse time PW7=Tb1/P4, simulating an experimental wafer temperature field 7 as shown in fig. 12, enabling the highest surface temperature to reach 1980K after one pulse action, exceeding a melting transition temperature 1685K, enabling the surface to be melted, enabling the activation depth of low-concentration N-stop to be 6.9um, enabling the activation depth to be 3um and over 1100K, and enabling the surface to start to be cooled after the pulse PW7 is ended until the next pulse arrives according to a time sequence relation, and enabling the surface to start to be warmed up again according to a time period T;
example 9
The method comprises the steps of adopting a 808nm laser, a power density P4, a total thermal budget Tb2, a pulse time PW8=Tb2/P4, simulating an experimental wafer temperature field 8, wherein after one pulse acts, the highest surface temperature reaches 2140K, the surface is higher than a melting transition temperature 1685K, the surface is melted, the melting depth is 4.8um, the activation depth of low-concentration N-stop above 1100K is 9um, after the pulse PW8 is ended, cooling is started, according to a time sequence relation, until the next pulse comes, the surface starts to heat up again, and the temperature is raised and lowered according to a time period T;
the above 8 sets of simulation experiments, with the same thermal budget, the temperature gradient along the wafer annealing plane (100 um) to the lower surface (0 um) when the pulse loading is completed, as shown in fig. 14 and 15, the higher the power density P, the more heat accumulated at the shallow surface of the 10um impurity implantation zone (contributing to more fully activating the N-stop) and the less heat spread in the zone deeper than 10um, and therefore the higher the semiconductor laser power density P, whether melting or N-stop activated, is more advantageous.
In the above 8 groups of simulation experiments, the thermal budget Tbm required when the surface just melts is shown in fig. 16 and table 1, and it is obvious that Tbm2 > Tbm3 > Tbm4 is seen that the larger the power density P, the shorter the time t required for melting and the lower the thermal budget required for surface melting. Low melting thermal budget for shallow surface heavy doping to be melted (bulk concentration > 1E20 atm s/cm 3 ) It is important that for thin and ultra-thin wafers, the lower the thermal budget is to complete the melting, the lower the risk of chipping due to heat build up.
TABLE 1 surface melting thermal budget Table
Based on the simulation experiment, the semiconductor long wavelength laser can complete the deep light doping activation and also can complete the shallow surface heavy doping activation, and based on the experimental data, the semiconductor laser light source with 808-1064nm wavelength is optimized; the preferable Length is 1-10mm, and the spot size with Width of 30-500um is the practical spot size; the preferred power density P range is 200-5000kW/cm 2 。
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (6)
1. A long wavelength laser annealing method for annealing a wafer using a laser output of a pulse signal, characterized in that the laser in the long wavelength laser annealing method specifically comprises: semiconductor with long wavelengthA laser light source; the spot size with the length of 1-10mm and the width of 30-500um is used as the spot size for practical application; the power density P during annealing is in the range of 200-5000kW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Therefore, the annealing effects of solid-phase activation, micro-melting activation and large-depth melting activation are realized simultaneously by using long-wavelength laser; the long wavelength laser annealing method uses a device with only one infrared laser, and the laser wavelength is 808-1064nm.
2. The long wavelength laser annealing method according to claim 1, characterized in that said method is specifically: the system control unit controls the overall time sequence of the laser and the synchronous movement of the laser and the slide holder, and is in the form of a pulse generator;
the laser beam generated by the laser is projected onto the surface of the wafer in the form of linear spots through the optical system, the chuck and the wafer are driven by the slide holder to perform back and forth scanning and stepping movement, and finally the laser beam covers the whole wafer, so that the whole process of laser annealing is completed.
3. The long wavelength laser annealing method according to claim 2, wherein the optical system performs the functions of beam transformation, homogenization, synthesis and projection of the original beam from the light source to the target spot in a spatial distribution, and shapes the beam spot from the original circular spot into a relatively uniform linear spot having a relatively narrow dimension in the width direction.
4. The long wavelength laser annealing method according to claim 3, wherein the light intensity distribution of the linear spot in the method has mainly two forms: the first form is a length-direction flat top distribution and a width-direction Gaussian distribution; the second form is a length-direction flat-top distribution and a width-direction flat-top distribution.
5. The long wavelength laser annealing method according to claim 2, wherein the laser pulses are energy-output at a repetition rate f over a time distribution in the method.
6. A long wavelength laser annealing device for implementing the long wavelength laser annealing method according to any one of claims 1 to 5, characterized in that the device is composed of a system control unit, an infrared light laser, an optical system, a stage and a chuck, wherein the system control unit is in the form of a pulse generator, and the system control unit is used for controlling the overall time sequence of the laser and the synchronous movement of the laser and the stage, and the stage is used for driving a wafer on the chuck to perform back and forth scanning and stepping movement.
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| DE102013009419A1 (en) * | 2012-06-11 | 2013-12-12 | Ultratech, Inc. | Laser annealing or annealing systems and ultra-short residence and holding time processes |
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| JP4678700B1 (en) * | 2009-11-30 | 2011-04-27 | 株式会社日本製鋼所 | Laser annealing apparatus and laser annealing method |
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