CN112424952A - Method for manufacturing crystalline solar cell - Google Patents
Method for manufacturing crystalline solar cell Download PDFInfo
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- CN112424952A CN112424952A CN201980036778.9A CN201980036778A CN112424952A CN 112424952 A CN112424952 A CN 112424952A CN 201980036778 A CN201980036778 A CN 201980036778A CN 112424952 A CN112424952 A CN 112424952A
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- Prior art keywords
- passivation film
- solar cell
- paste composition
- electrode
- aluminum
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 98
- 239000000203 mixture Substances 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000010304 firing Methods 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 52
- 229910052782 aluminium Inorganic materials 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical group 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 229910000464 lead oxide Inorganic materials 0.000 claims description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 2
- 150000004692 metal hydroxides Chemical class 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000011049 filling Methods 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a method for manufacturing a crystalline solar cell having a passivation film on one or both surfaces of a silicon substrate, wherein one or more electrodes are formed on the passivation film of the crystalline solar cell having the passivation film on one or both surfaces of the silicon substrate in a size close to the opening width, the method comprising the steps of: (1) a step 1 of forming a passivation film a having 1 or 2 or more openings, when the passivation film is formed on the one surface; when the passivation films are provided on both surfaces, one or both of the passivation films is a passivation film A having 1 or 2 or more openings, and a coating film composed of a paste composition for electrode formation is formed in a region covering the openings; (2) step 2 of performing a firing process on the silicon substrate and the coating film; and (3) a step (3) of leaving at least the burned product (8, 9) formed so as to fill the recess of the opening, and removing a part or all of the burned product (7) formed so as to be other than the remaining burned product.
Description
Technical Field
The present invention relates to a method for manufacturing a crystalline solar cell having a passivation film on one or both surfaces of a silicon substrate.
Background
In recent years, as a crystalline solar cell having high conversion efficiency, a cell having a structure in which insulating films (passivation films) are provided on both surfaces of a silicon solar cell has been actively developed. Specifically, there are known a cell having a PERC (Passivated emitter and rear cell) type structure in which a p-type silicon substrate is used and a passivation film and an electrode are formed on both surfaces, and a cell having a PERT (Passivated emitter and rear diffused cell) type structure in which an n-type silicon substrate is used and a passivation film and an electrode are formed on both surfaces.
In addition, a PERC type or PERT type cell is also known, which is a passivated contact type cell in which an oxide film and a silicon film are formed between a passivation film and a silicon substrate to improve passivation effect, and a rear contact type cell in which front (front) electrodes of the PERC type, PERT type, or passivated contact type cell are integrated with a rear surface of the cell.
Further, development of a double-sided light-receiving type solar cell in which a rear surface aluminum electrode in a cell having a PERC type structure is printed linearly, so that sunlight can be incident from the rear surface, thereby improving characteristics has been advanced (non-patent document 1, fig.4, fig.7, and the like).
The double-sided light receiving type solar cell can increase the amount of incident light by reducing the area of the back aluminum electrode. However, conventionally, it has been difficult to form a thin line by screen printing using an aluminum-containing paste composition (paste composition) for forming a back electrode, and it is considered that the width of the thin line which can be formed by screen printing is generally limited to about 200 μm. That is, it has been difficult to form a linear back electrode made of a thin wire having a width of less than 200 μm.
Documents of the prior art
Non-patent document
Non-patent document 1: "Understanding the rear-side layout of p-side biological PERC polar cells with a relationship driver experiment", 7th International Conference on Silicon photodynamics, Silicon PV 2017, Energy program 124(2017)225-
Disclosure of Invention
Technical problem to be solved by the invention
When the electrode is formed using the paste composition for forming an electrode as described above, for example, in the case of a unit having a PERC type structure, 1 or 2 or more openings are formed in the rear surface passivation film formed on the rear surface of the silicon substrate by laser or the like, and the aluminum-containing paste composition is printed and fired in a region covering the openings, thereby forming a rear surface aluminum electrode. The paste composition existing so as to fill the opening reacts with the silicon substrate during firing to form an electric field layer (aluminum-silicon (Al-Si) alloy layer, p+Layers, etc.), a BSF (back surface field) effect is obtained.
Here, the paste composition may be printed only in a part of the area covering the opening, thereby making it possible to produce a double-sided light-receiving type in which light enters between the linear rear aluminum electrodes. In addition, since the amount of light incident from the rear surface depends on the area of the rear surface aluminum electrode, the rear surface aluminum electrode needs to be formed in a size close to the opening width of the passivation film.
However, since the rear aluminum electrode having a width several times as wide as the opening width is formed in the method of screen printing the paste composition, light incident from the rear surface cannot be effectively utilized.
Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a method for manufacturing a crystalline solar cell having a passivation film on one surface or both surfaces of a silicon substrate, wherein, in the case where the passivation film is provided on one surface, one or more electrodes are formed on the passivation film in a size close to the opening width; in the case where the passivation films are provided on both surfaces, one or more kinds of electrodes are formed on one or both passivation films in a size close to the width of the opening. By forming the electrode in a size close to the opening width, the light receiving area can be secured to be enlarged, the incident light can be utilized more effectively, and the power generation characteristic can be improved.
Means for solving the problems
The present inventors have conducted extensive studies to achieve the above object, and as a result, have found that the above object can be achieved by a method for manufacturing a crystalline solar cell having a specific step, and have completed the present invention.
That is, the present invention relates to a method for manufacturing a crystalline solar cell described below.
1. A method for manufacturing a crystalline solar cell having a passivation film on one surface or both surfaces of a silicon substrate, the method comprising the steps of:
(1) a step 1 of forming a passivation film a having 1 or 2 or more openings, when the passivation film is formed on the one surface; when the passivation films are provided on both surfaces, one or both of the passivation films is a passivation film A having 1 or 2 or more openings, and a coating film composed of a paste composition for electrode formation is formed in a region covering the openings of the passivation film A;
(2) step 2 of performing a firing process on the silicon substrate and the coating film; and
(3) and a step 3 of leaving the fired material formed so as to fill at least the recessed portion of the opening and removing a part or all of the fired material formed so as to be other than the remaining fired material.
2. The method for manufacturing a crystalline solar cell according to item 1 above, wherein the openings are linear with a width of 20 to 100 μm.
3. The method for manufacturing a crystalline solar cell according to item 1 or item 2, wherein the electrode-forming paste composition is an aluminum-containing paste composition containing 0.1 to 15 parts by mass of a glass powder per 100 parts by mass of an aluminum powder.
4. The method for manufacturing a crystalline solar cell according to item 3 above, wherein the aluminum-containing paste composition contains at least one selected from the group consisting of: (1) a glass powder containing at least one metal oxide selected from the group consisting of bismuth oxide, lead oxide, zinc oxide, silicon oxide, and magnesium oxide; (2) a metal oxide; and (3) a metal hydroxide.
Effects of the invention
According to the method for manufacturing a crystalline solar cell of the present invention, since the method for manufacturing a crystalline solar cell includes the steps of: and a step of removing a part or all of the baked material of the coating film of the paste composition for electrode formation applied to a region covering the opening of the passivation film a having 1 or 2 or more openings in the passivation film, except for the baked material formed so as to fill the recess of the opening, while leaving at least the baked material. By forming the electrode in a size close to the opening width, the light receiving area can be secured to be enlarged, the incident light can be utilized more effectively, and the power generation characteristic can be improved.
Drawings
Fig. 1 (a) is a plan view image of the back surface aluminum electrode of the solar cell sample produced in comparative example 2 with a laser microscope, and (b) is a plan view image of the back surface aluminum electrode of the solar cell sample produced in example 1 with a laser microscope.
Fig. 2 (a) is a cross-sectional observation image by SEM (scanning electron microscope) of the back surface aluminum electrode of the solar cell sample produced in comparative example 2, and (b) is a cross-sectional observation image by SEM of the back surface aluminum electrode of the solar cell sample produced in example 1.
Fig. 3 is a diagram schematically showing the silicon substrate 1 having 2 openings 6 on the back surface passivation film 5.
Fig.4 is a schematic cross-sectional view of the aluminum-containing paste composition applied to the region covering 2 openings 6 of the rear surface passivation film 5, dried, and fired. Wherein 7 is a fired product of an aluminum-containing paste composition, 8 is an Al-Si alloy layer, and 9 is p+And (3) a layer.
Fig. 5 is a schematic view of the calcined product 7 of the aluminum-containing paste composition shown in fig.4, which is present outside the opening (which is not a portion in the form of a filling recess), being removed. In this schematic, an Al — Si layer 8 is used as the back side aluminum electrode.
Detailed Description
The method for producing the crystalline solar cell of the present invention (also referred to as "the production method of the present invention") will be described in detail below.
The method for manufacturing a crystalline solar cell having a passivation film on one or both surfaces of a silicon substrate includes:
(1) a step 1 of forming a passivation film a having 1 or 2 or more openings, when the passivation film is formed on the one surface; when the passivation films are provided on both surfaces, one or both of the passivation films is a passivation film A having 1 or 2 or more openings, and a coating film composed of a paste composition for electrode formation is formed in a region covering the openings of the passivation film A;
(2) step 2 of performing a firing process on the silicon substrate and the coating film; and
(3) and a step 3 of leaving the fired material formed so as to fill at least the recessed portion of the opening and removing a part or all of the fired material formed so as to be other than the remaining fired material.
According to the above-described manufacturing method of the present invention, since the manufacturing method includes the steps of: and a step of removing a part or all of the baked material of the coating film of the paste composition for electrode formation applied to a region covering the opening of the passivation film a having 1 or 2 or more openings in the passivation film, by leaving at least the baked material formed so as to fill the recess of the opening in the baked material, the baked material being formed so as to fill the opening. By forming the electrode in a size close to the opening width, the light receiving area can be secured to be enlarged, the incident light can be utilized more effectively, and the power generation characteristic can be improved.
Hereinafter, each step of the manufacturing method of the present invention will be described with reference to the drawings.
In addition, the method for manufacturing a crystalline solar cell according to the present invention is a method for manufacturing a crystalline solar cell having a passivation film on one surface or both surfaces of a silicon substrate, wherein when the passivation film is provided on the one surface, the passivation film is a passivation film a having 1 or 2 or more openings; when the passivation films are provided on both sides, one or both of the passivation films are the passivation film a having 1 or 2 or more openings. Here, the passivation film other than the passivation film a means a passivation film having no opening.
When the passivation film a is provided on one surface of the silicon substrate, for example, the passivation film a is a rear surface passivation film, and a rear surface electrode (for example, a rear surface aluminum electrode) is formed in a size close to the opening width. When the passivation films a are provided on both surfaces of the silicon substrate, for example, a rear surface electrode (for example, a rear surface aluminum electrode) is formed on the rear surface passivation film in a size close to the opening width, and a front surface electrode (for example, a silver electrode, a copper electrode, or an aluminum electrode) is formed on the front surface (front surface, the same applies hereinafter) passivation film in a size close to the opening width.
As described above, the form applicable to the manufacturing method of the present invention is various depending on the kind of electrode or the surface on which the electrode is provided, but even when the electrode is provided on any one of the front surface and the back surface of the silicon substrate, it is possible to form one or more kinds of electrodes in a size close to the width of the opening by forming a coating film made of a paste composition for electrode formation (an aluminum-containing paste composition, a silver-containing paste composition, a copper-containing paste composition, or the like depending on the kind of electrode) in a region covering the opening of the passivation film a having 1 or 2 or more openings (step 1 described later) and further processing the fired product in steps 2 and 3 described later. When the passivation film a is provided on both surfaces (front and back surfaces) of the silicon substrate, the step 1 (and steps 2 and 3) to be described later on the surface passivation film a and the step 1 (and steps 2 and 3) to be described later on the back surface passivation film a may be performed simultaneously on both surfaces or may be performed separately on the front and back surfaces without being simultaneous. Hereinafter, the present invention will be described while particularly exemplarily showing a scheme (also referred to as "scheme") of forming a rear aluminum electrode on an opening of a rear passivation film a of a front passivation film and a rear passivation film in a cell having a PERC type structure in a size close to an opening width.
Procedure 1 (applying paste composition to the area covering the opening)
In step 1, a coating film made of a paste composition for electrode formation is formed on a region covering the opening of the passivation film a.
As the silicon substrate, for example, a p-type silicon substrate, an n-type silicon substrate, a silicon substrate obtained by combining these, or the like can be used. This embodiment will be described below with reference to fig. 3 to 5 using a p-type silicon substrate (p-type Si).
The thickness of the silicon substrate 1 (p-type silicon substrate) is not limited, but a silicon substrate of 180 to 250 μm is preferably used.
An n-type silicon layer 3 having a thickness of, for example, 0.3 to 0.6 μm, a surface passivation film 2 as an antireflection film made of a silicon nitride film, and a silver (Ag) electrode 4 as a gate electrode (grid electrode) may be provided on one surface (front surface) of the silicon substrate 1.
A structure in which a rear surface passivation film 5, which is a laminated film of an aluminum oxide film and a silicon nitride film, for example, is provided on the side (rear surface) opposite to the surface provided with the silver electrode 4 can be used.
The rear surface passivation film 5 is provided with 1 or 2 or more openings 6. That is, in this embodiment, the back passivation film 5 is the passivation film a. The opening 6 is an opening for making contact with the silicon substrate 1, and may be formed by laser irradiation, etching, or the like. The shape of the opening 6 is not limited, and a straight line, a curved line, a broken line, a dot, or the like can be used as appropriate. When the plurality of openings 6 are formed, the arrangement thereof is not limited, and a regular arrangement or a random arrangement may be employed.
In the present invention, each opening 6 is preferably a straight line having a width of 20 to 100 μm, and from the point of controlling the electrode pattern, the openings 6 are preferably regularly formed in the longitudinal and transverse directions in a plan view of the silicon substrate 1.
The paste composition may be a paste composition for forming an electrode, and in this embodiment, it is an aluminum-containing paste composition for forming a back aluminum electrode, specifically, a paste in which aluminum powder is dispersed in an organic solvent.
The composition of the aluminum powder is not particularly limited, and pure aluminum having a purity of 99 wt% or more may be used, or an aluminum alloy powder may be suitably used.
The form of the aluminum powder is not particularly limited, and may be spherical or ellipsoidal. Among these, spherical aluminum powders are preferable because they have good printability and good reaction with silicon. The aluminum powder preferably has an average particle diameter of 1 to 20 μm in terms of printability, reactivity, and the like. More preferably 1 to 6 μm.
The paste composition preferably contains 0.1 to 15 parts by weight of glass powder per 100 parts by weight of aluminum powder.
The composition of the glass powder is not particularly limited, and for example, a glass powder containing a compound selected from the group consisting of B2O3、Bi2O3、ZnO、SiO2、Al2O3、BaO、CaO、SrO、V2O5、Sb2O3、WO3、P2O5And TeO2Glass powder of one or more components of the group. Wherein the composition containing B is used2O3The glass powder of component (B) (bismuth-based glass powder) is preferred because reactivity between silicon and aluminum is improved.
In the present invention, since a part of a fired product of the paste composition is removed in step 3 described later, it is preferable that the paste composition contains a glass powder, an oxide, a hydroxide, or the like for suppressing firing in order to improve the removability.
As the above-mentioned glass powder for suppressing sintering, glass powder containing 60% by weight or more of any one metal oxide of bismuth oxide, lead oxide, zinc oxide, silicon oxide and aluminum oxide can be used. Examples of the above-mentioned sintering-inhibiting oxide include silicon oxide, aluminum oxide, calcium oxide, bismuth oxide, lead oxide, zinc oxide, germanium oxide, and the like. Examples of the above-mentioned hydroxide for suppressing sintering include aluminum hydroxide and zinc hydroxide.
The paste composition may contain an organic solvent, a resin, a glass powder, and the like in addition to the aluminum powder. The composition is not limited, and may be: in 100% by mass of the paste composition, the aluminum powder is 60% by weight or more and 90% by weight or less, the organic solvent is 2% by weight or more and 20% by weight or less, and the remainder is 2% by weight or more and 20% by weight or less.
The organic solvent is not limited, and for example, diethylene glycol monobutyl ether, terpineol, and the like can be used.
In the step 1, a coating film made of the paste composition is formed in a region covering 1 or 2 or more openings of the passivation film a, and a coating method is not limited, and for example, a screen printing method, a dispensing method (dispensing) method, or the like can be used. At this time, the paste composition is applied to a region covering the passivation film a in a range of 1 μm to 1000 μm from the end of the opening while filling (filling) the recess of the opening. The thickness of the coating film of the paste composition (the thickness of the coating film on the passivation film A) is preferably 10 μm to 40 μm. Drying at normal temperature or elevated temperature after coating.
Step 2 (firing treatment)
In step 2, the silicon substrate and the coating film are subjected to a firing treatment.
The firing treatment may be performed in an air atmosphere or a nitrogen atmosphere. The firing temperature is preferably 500 ℃ to 1000 ℃ inclusive, and more preferably 650 ℃ to 850 ℃ inclusive. The firing time can be adjusted depending on the firing temperature, and can be set to 3 seconds to 300 seconds.
In this embodiment, the aluminum contained in the paste composition of the open concave portion and the silicon substrate are generated by the firing treatmentContact, where aluminum reacts with silicon to form an electric field layer (Al-Si alloy layer 8, p)+Layer 9) to form a fired product 7 of a paste composition outside the recessed portion of the opening (see fig. 4). And, since p is as described above+The presence of the layer 9 prevents recombination of electrons, and provides a BSF effect of improving the collection efficiency of generated carriers.
Step 3 (treatment for removing part of the fired product)
In step 3, the burned product formed so as to fill at least the recessed portion of the opening is left, and a part or all of the burned product formed so as to fill the recessed portion is removed.
In step 3, at least the fired material (alloy layers 8 and p in fig. 4) formed so as to fill the open recess is left+Layer 9), a fired material formed in a manner other than that (a fired material of a paste composition formed outside the opening: burned material 7) of fig.4 is partially or entirely removed.
When removing part or all of the burned product 7, acid etching, polishing, or the like can be used. In addition, when the paste composition contains a sintering-inhibiting glass powder, oxide, hydroxide, or the like, part or all of the fired material 7 can be peeled off naturally without polishing or the like. In this embodiment, in order to most effectively utilize light incident from the back surface, all of the burned material 7 formed outside the opening may be removed, but the removal rate of light can be improved as compared with the conventional one by removing at least part of the burned material 7, and therefore the removal rate can be appropriately set.
In this embodiment, by performing the above steps 1 to 3 (particularly step 3), the rear aluminum electrode can be formed in a size substantially equal to or close to the opening width of the passivation film, and light incident from the rear surface can be used more effectively.
In addition, a metal plating layer of silver, copper, nickel, or the like may be formed on the back aluminum electrode formed in this embodiment by a known technique, thereby reducing the resistance value of the electrode while maintaining the electrode area.
The present invention is not limited to the above-described embodiments, and can be widely applied to various types of cells of the PERC type, PERT type, passivation contact type, and back contact type, in the case where one or more electrodes are formed on the passivation film a on the front surface and/or the back surface of the silicon substrate in a size close to the opening width. As described above, for the back aluminum electrode, as for other types of electrodes, known electrodes can be produced by applying a known paste composition for forming electrodes to the production method of the present invention.
Examples
The present invention will be specifically described below by way of examples and comparative examples. However, the present invention is not limited to the examples.
Example 1
To 100 parts by mass of aluminum powder, 3 parts by mass of bismuth glass powder and 29 parts by mass of an organic vehicle (organic vehicle) were added and mixed by a known mixer to prepare a paste composition.
On the back surface of a solar cell having a linear film opening of 45 μm width on the back surface passivation film (passivation film a) of a PERC type solar cell having a wafer size of 156mm square, a paste composition was applied by screen printing using a screen mask having an opening width of 60 μm width to a region covering the opening width of the back surface passivation film, dried at 100 ℃ for 10 minutes, and fired at 700 ℃ to 4 seconds. After firing, the solar cell was subjected to acid etching to remove the fired material of the paste composition in a form other than the form of filling the opening, thereby obtaining a solar cell sample.
Fig. 1 (b) shows a plan view image of the back surface aluminum electrode of the solar cell sample produced in example 1, using a laser microscope. Fig. 2 (b) shows a cross-sectional observation image by SEM of the rear aluminum electrode of the solar cell sample produced in example 1.
Example 2
A solar cell sample was obtained in the same manner as in example 1, except that a paste composition was applied by screen printing to a region covering the opening width of the rear surface passivation film using a screen mask having an opening width of 100 μm.
Example 3
A solar cell sample was obtained in the same manner as in example 1, except that a paste composition was applied by screen printing to a region covering the opening width of the rear surface passivation film using a screen mask having an opening width of 150 μm.
Comparative example 1
To 100 parts by mass of aluminum powder, 3 parts by mass of bismuth-based glass powder and 29 parts by mass of an organic vehicle were added, and the mixture was mixed by a known mixer to prepare a paste composition.
On the back surface of a solar cell having a linear film opening of 45 μm width on the back surface passivation film (passivation film a) of a PERC type solar cell of 156mm square wafer size, a paste composition was applied by screen printing using a screen mask having an opening width of 50 μm width to a region covering the opening width of the back surface passivation film, dried at 100 ℃ for 10 minutes, and fired at 700 ℃ to 4 seconds, thereby obtaining a solar cell sample.
Comparative example 2
A solar cell sample was obtained in the same manner as in comparative example 1, except that a paste composition was applied by screen printing to a region covering the opening width of the rear passivation film using a screen mask having an opening width of 60 μm.
Fig. 1 (a) shows a plan view image of the rear aluminum electrode of the solar cell sample produced in comparative example 2, which was observed by a laser microscope. Fig. 2 (a) shows a cross-sectional observation image by SEM (scanning electron microscope) of the rear aluminum electrode of the solar cell sample produced in comparative example 2.
Comparative example 3
A solar cell sample was obtained in the same manner as in comparative example 1, except that a paste composition was applied by screen printing to a region covering the opening width of the rear passivation film using a screen mask having an opening width of 100 μm.
Comparative example 4
A solar cell sample was obtained in the same manner as in comparative example 1, except that a paste composition was applied by screen printing to a region covering the opening width of the rear passivation film using a screen mask having an opening width of 150 μm.
Test example 1
The back surface aluminum electrode of the obtained solar cell sample was observed with a laser microscope (manufactured by KEYENCE CORPORATION) and the line width was measured. The power generation characteristic Isc of the back surface side was measured under light from a solar simulator (WACOM ELECTRIC co., LTD).
The results of measuring the electrode width and the Isc characteristics are shown in table 1.
[ Table 1]
From the results in table 1, it was clearly confirmed that the solar cell sample produced by the method of the present invention had a reduced electrode width and improved power generation characteristics Isc on the back surface side.
When a screen plate having a width of 50 μm is used for applying the paste composition by screen printing, a screen plate having a width of 60 μm or more is preferably used because a broken line is observed in the coating film after printing. When an electrode is formed by a conventional method, even when a screen printing plate having a width of 60 μm is used, the formed electrode is as wide as about 130 μm, and therefore it is difficult to form an electrode having a width of 60 μm or less by a conventional method.
The samples (examples 1 to 3) including the step of removing the fired product of the paste composition in a form not filling the openings of the passivation film a showed a final electrode width of 60 μm or less regardless of the line width of the screen printing, and therefore, a screen plate having a screen width of any width of 60 μm to several hundred μm was used.
Description of the reference numerals
1: a silicon substrate; 2: a surface passivation film; 3: n-type silicon layer (n)+An emitter layer); 4: a silver electrode; 5: a back surface passivation film (passivation film a); 6: laser opening; 7: a fired product of the paste composition; 8: an Al-Si alloy layer; 9: p is a radical of+And (3) a layer.
Claims (4)
1. A method for manufacturing a crystalline solar cell having a passivation film on one surface or both surfaces of a silicon substrate, the method comprising the steps of:
(1) a step 1 of forming a passivation film a having 1 or 2 or more openings, when the passivation film is formed on the one surface; when the passivation films are provided on both surfaces, one or both of the passivation films is a passivation film A having 1 or 2 or more openings, and a coating film composed of a paste composition for electrode formation is formed in a region covering the openings of the passivation film A;
(2) step 2 of performing a firing process on the silicon substrate and the coating film; and
(3) and a step 3 of leaving the fired material formed so as to fill at least the recessed portion of the opening and removing a part or all of the fired material formed so as to be other than the remaining fired material.
2. The method for manufacturing a crystalline solar cell according to claim 1, wherein the openings are linear with a width of 20 to 100 μm.
3. The method for manufacturing a crystalline solar cell according to claim 1 or 2, wherein the paste composition for forming an electrode is an aluminum-containing paste composition containing 0.1 to 15 parts by mass of a glass powder per 100 parts by mass of an aluminum powder.
4. The method for manufacturing a crystalline solar cell according to claim 3, wherein the aluminum-containing paste composition contains at least one selected from the group consisting of: (1) a glass powder containing at least one metal oxide selected from the group consisting of bismuth oxide, lead oxide, zinc oxide, silicon oxide, and magnesium oxide; (2) a metal oxide; and (3) a metal hydroxide.
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| JP2018103297 | 2018-05-30 | ||
| JP2018-103297 | 2018-05-30 | ||
| PCT/JP2019/021120 WO2019230728A1 (en) | 2018-05-30 | 2019-05-28 | Production method for crystal-based solar cell |
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| CN112424952A true CN112424952A (en) | 2021-02-26 |
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| JP (1) | JPWO2019230728A1 (en) |
| CN (1) | CN112424952A (en) |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110120535A1 (en) * | 2009-11-25 | 2011-05-26 | E.I. Du Pont De Nemours And Company | Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells |
| US20110197961A1 (en) * | 2010-02-12 | 2011-08-18 | Chun-Min Wu | Conductive aluminum paste and the fabrication method thereof, the solar cell and the module thereof |
| CN202796971U (en) * | 2012-08-17 | 2013-03-13 | 苏州阿特斯阳光电力科技有限公司 | Back side structure of crystalline silicon solar cell |
| US20130267059A1 (en) * | 2012-04-04 | 2013-10-10 | Young-Jin Kim | Method of manufacturing photoelectric device |
| US20160027936A1 (en) * | 2014-07-24 | 2016-01-28 | Motech Industries Inc. | Solar cell and solar cell module containing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160122467A (en) * | 2015-04-14 | 2016-10-24 | 엘지전자 주식회사 | Method for manufacturing solar cell |
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2019
- 2019-05-28 JP JP2020522214A patent/JPWO2019230728A1/en active Pending
- 2019-05-28 WO PCT/JP2019/021120 patent/WO2019230728A1/en active Application Filing
- 2019-05-28 CN CN201980036778.9A patent/CN112424952A/en active Pending
- 2019-05-29 TW TW108118600A patent/TWI807034B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110120535A1 (en) * | 2009-11-25 | 2011-05-26 | E.I. Du Pont De Nemours And Company | Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells |
| US20110197961A1 (en) * | 2010-02-12 | 2011-08-18 | Chun-Min Wu | Conductive aluminum paste and the fabrication method thereof, the solar cell and the module thereof |
| US20130267059A1 (en) * | 2012-04-04 | 2013-10-10 | Young-Jin Kim | Method of manufacturing photoelectric device |
| CN202796971U (en) * | 2012-08-17 | 2013-03-13 | 苏州阿特斯阳光电力科技有限公司 | Back side structure of crystalline silicon solar cell |
| US20160027936A1 (en) * | 2014-07-24 | 2016-01-28 | Motech Industries Inc. | Solar cell and solar cell module containing the same |
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| WO2019230728A1 (en) | 2019-12-05 |
| TW202005102A (en) | 2020-01-16 |
| TWI807034B (en) | 2023-07-01 |
| JPWO2019230728A1 (en) | 2021-07-15 |
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