CN112420486A - Method for forming semiconductor thin film - Google Patents
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- CN112420486A CN112420486A CN201910777885.9A CN201910777885A CN112420486A CN 112420486 A CN112420486 A CN 112420486A CN 201910777885 A CN201910777885 A CN 201910777885A CN 112420486 A CN112420486 A CN 112420486A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Abstract
A method of forming a semiconductor thin film, comprising: providing a substrate, and placing the substrate in a deposition chamber; step two, introducing a first precursor gas into the deposition chamber, and forming an adsorption layer on the surface of the substrate, wherein the duration of introducing the first precursor gas is first time; step three, the first precursor gas introduced into the deposition chamber in the step two continuously stays in the deposition chamber for a second time; step four, after staying for a second time, discharging residual first precursor gas; step five, introducing a second precursor gas into the deposition chamber, wherein the second precursor gas reacts with the adsorption layer to form a single-layer film layer on the surface of the substrate; sixthly, discharging residual second precursor gas and reaction byproducts; and repeating the second step to the sixth step until a film is formed on the surface of the substrate. The method of the invention improves the thickness uniformity of the film.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a method for forming a semiconductor film.
Background
When an integrated circuit is manufactured by a semiconductor process, thin films of various materials need to be formed. Various thin film fabrication techniques and methods have been developed for a long time, such as vacuum evaporation deposition, magnetron sputtering deposition, ion beam sputtering deposition, metalorganic chemical vapor deposition (MOCVD), and Molecular Beam Epitaxy (MBE). The method has various characteristics and can be widely applied in a certain range. However, with the demand for further reduction of material dimensions, the conventional thin film material manufacturing methods have been increasingly unable to meet the future requirements for manufacturing high-quality nanoscale thin film materials and devices due to their respective limitations.
Atomic Layer Deposition (ALD) is a new developed high-quality thin film forming process, and is controlled on-line with high precision, and alternately passes gas-phase reactants into a reaction chamber by pulses, and then the reactants are chemically adsorbed on a substrate and react to form a film. The process can be completely controllable at the monoatomic layer level due to the characteristics of accurate thickness control, deposition thickness uniformity, consistency and the like.
However, the thickness uniformity of the thin film formed by the atomic layer deposition process still needs to be improved.
Disclosure of Invention
The invention aims to solve the technical problem of how to improve the thickness uniformity of a thin film formed by an atomic layer deposition process.
The invention provides a method for forming a semiconductor film, which comprises the following steps:
providing a substrate, and placing the substrate in a deposition chamber;
step two, introducing a first precursor gas into the deposition chamber, and forming an adsorption layer on the surface of the substrate, wherein the duration of introducing the first precursor gas is first time;
step three, the first precursor gas introduced into the deposition chamber in the step two continuously stays in the deposition chamber for a second time;
step four, after staying for a second time, discharging residual first precursor gas;
step five, introducing a second precursor gas into the deposition chamber, wherein the second precursor gas reacts with the adsorption layer to form a single-layer film layer on the surface of the substrate;
sixthly, discharging residual second precursor gas and reaction byproducts;
and repeating the second step to the sixth step until a film is formed on the surface of the substrate.
Optionally, the duration of introducing the second precursor gas is a third time, and the radio frequency is applied while introducing the second precursor gas to ionize the second precursor gas.
Optionally, the material of the film is silicon oxide.
Optionally, the first precursor gas is a silicon source gas, and the second precursor gas is an oxygen source gas.
Optionally, the thickness of the single-layer film layer is 0.1nm to 0.25nm, and the thickness of the film is 1nm to 100 nm.
Optionally, the flow rate of the silicon source gas is 0.1 to 15slm, the flow rate of the oxygen source gas is 0.1 to 15slm, the pressure of the deposition chamber is 1000mtorr to 2000mtorr, and the temperature is 20 ℃ to 80 ℃.
Optionally, the silicon source gas is SiH3N(C3H7)2、SiH[N(CH3)2]3、HCDS、SiH2(NHtBu)2SAM-24 or H2Si[N(C2H5)2]2(ii) a The oxygen source gas is O2Or O3。
Optionally, the first time is 0.1S to 50S, and the second time is 1S to 50S.
Optionally, the film is made of silicon nitride, gallium nitride or titanium nitride.
Optionally, when the film material is silicon nitride, the first precursor gas is a silicon source gas, and the second precursor gas is a nitrogen source gas; when the film material is gallium nitride, the first precursor gas is a gallium source gas, and the second precursor gas is a nitrogen source gas; when the film material is titanium nitride, the first precursor gas is a titanium source gas, and the second precursor gas is a nitrogen source gas.
Optionally, the substrate surface has a plurality of raised semiconductor patterns, and the film covers the raised semiconductor patterns and the substrate.
Compared with the prior art, the technical scheme of the invention has the following advantages:
the method for forming a semiconductor thin film of the present invention comprises the steps of: providing a substrate, and placing the substrate in a deposition chamber; step two, introducing a first precursor gas into the deposition chamber, and forming an adsorption layer on the surface of the substrate, wherein the duration of introducing the first precursor gas is first time; step three, the first precursor gas introduced into the deposition chamber in the step two continuously stays in the deposition chamber for a second time; step four, after staying for a second time, discharging residual first precursor gas; step five, introducing a second precursor gas into the deposition chamber, wherein the second precursor gas reacts with the adsorption layer to form a single-layer film layer on the surface of the substrate; sixthly, discharging residual second precursor gas and reaction byproducts; and repeating the second step to the sixth step until a film is formed on the surface of the substrate. After the second step is finished, the third step is carried out, the first precursor gas is stopped being supplied into the deposition chamber when the third step is carried out, the first precursor gas which is introduced into the deposition chamber when the second step is carried out is continuously remained in the deposition chamber for a second time, the adsorption time is increased, so that the remaining first precursor gas can be continuously adsorbed on the surface of the substrate, the first precursor gas material can be adsorbed on the surface of the substrate in a supersaturated manner, therefore, the interatomic adsorption supersaturation in the adsorption layer is formed on the surface of the substrate, the most dense stacking is formed, the adsorption layer formed on the substrate can be uniformly and compactly adsorbed on the surface of the substrate after the residual first precursor gas is discharged, the thickness of the adsorption layer is relatively uniform, and the thickness of a single-layer thin film formed by the reaction of the subsequently introduced second precursor gas and the adsorption layer is relatively uniform, therefore, the speed of forming each single-layer film on the relatively uniform single-layer film can be kept consistent, the thickness uniformity of each single-layer film is improved, and the thickness uniformity of the finally formed film is improved.
In the second step, the duration of the first precursor gas introduction is short for the first time (generally, several tenths of a second to several seconds), so that the process cost can be reduced (the introduction amount of the first precursor gas is limited in the first time), but the problem of non-uniform film thickness can be solved through the third step (the first precursor gas is not introduced, so that the first precursor gas introduced into the deposition chamber in the second step continues to stay in the deposition chamber for the second time and stays for the second time).
Further, the second time of the third step is 1S-50S, so that the first precursor gas material can be adsorbed on the surface of the substrate more saturated to form an adsorption layer.
Drawings
FIG. 1 is a schematic flow chart illustrating a method for forming a semiconductor thin film according to an embodiment of the present invention;
fig. 2-9 are schematic structural views illustrating a process of forming a semiconductor thin film according to an embodiment of the present invention.
Detailed Description
As mentioned in the background, the thickness uniformity of the existing thin film formed by the atomic layer deposition process still needs to be improved.
The research shows that the existing atomic layer deposition process forms a thin film by the following steps: placing the wafer in a deposition chamber; introducing a first precursor gas into the deposition chamber, and adsorbing the wafer surface to form an adsorption layer; removing the first precursor gas remaining in the processing chamber; introducing a second precursor gas into the deposition chamber, wherein the second precursor gas reacts with the adsorption layer to form a single-layer film on the surface of the wafer; removing the residual second precursor gas and reaction byproducts; repeating the above process until a film with a certain thickness is formed on the surface of the wafer.
The method comprises the steps of maintaining a certain period of time by introducing first precursor gas currently, introducing the first precursor gas all the time in the period of time to form an adsorption layer, and directly removing the first precursor gas remained in a deposition chamber after stopping introducing the first precursor gas. Particularly, when a semiconductor pattern having a protrusion is formed on the surface of a wafer, the thickness uniformity of a thin film formed by the above process is worse when the thin film covering the semiconductor pattern and the wafer is formed.
To this end, the present invention provides a method for forming a semiconductor thin film, comprising the steps of: providing a substrate, and placing the substrate in a deposition chamber; step two, introducing a first precursor gas into the deposition chamber, and forming an adsorption layer on the surface of the substrate, wherein the duration of introducing the first precursor gas is first time; step three, the first precursor gas introduced into the deposition chamber in the step two continuously stays in the deposition chamber for a second time; step four, after staying for a second time, discharging residual first precursor gas; step five, introducing a second precursor gas into the deposition chamber, wherein the second precursor gas reacts with the adsorption layer to form a single-layer film layer on the surface of the substrate; sixthly, discharging residual second precursor gas and reaction byproducts; and repeating the second step to the sixth step until a film is formed on the surface of the substrate. After the second step is finished, the third step is carried out, the first precursor gas is stopped being supplied into the deposition chamber when the third step is carried out, the first precursor gas which is introduced into the deposition chamber when the third step is carried out is continuously remained in the deposition chamber for a second time, the adsorption time is increased, so that the remaining first precursor gas can be continuously adsorbed on the surface of the substrate, the first precursor gas material can be adsorbed on the surface of the substrate in a supersaturated manner, the interatomic adsorption supersaturation in the adsorption layer is formed on the surface of the substrate, the most dense stacking is formed, the adsorption layer formed on the substrate can be uniformly and compactly adsorbed on the surface of the substrate after the residual first precursor gas is discharged, the thickness of the adsorption layer is uniform, and the thickness of a single-layer thin film formed by the reaction of the subsequently introduced second precursor gas and the adsorption layer is also uniform, therefore, the speed of forming each single-layer film on the relatively uniform single-layer film can be kept consistent, the thickness uniformity of each single-layer film is improved, and the thickness uniformity of the finally formed film is improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In describing the embodiments of the present invention in detail, the drawings are not to be considered as being enlarged partially in accordance with the general scale, and the drawings are only examples, which should not be construed as limiting the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
FIG. 1 is a schematic flow chart illustrating a method for forming a semiconductor thin film according to an embodiment of the present invention; fig. 2-9 are schematic structural views illustrating a process of forming a semiconductor thin film according to an embodiment of the present invention.
Referring to fig. 1, the method of forming the semiconductor thin film includes the steps of:
providing a substrate, and placing the substrate in a deposition chamber;
step two, introducing a first precursor gas into the deposition chamber, and forming an adsorption layer on the surface of the substrate, wherein the duration of introducing the first precursor gas is first time;
step three, the first precursor gas introduced into the deposition chamber in the step two continuously stays in the deposition chamber for a second time;
step four, after staying for a second time, discharging residual first precursor gas;
step five, introducing a second precursor gas into the deposition chamber, wherein the second precursor gas reacts with the adsorption layer to form a single-layer film layer on the surface of the substrate;
sixthly, discharging residual second precursor gas and reaction byproducts;
and repeating the second step to the sixth step until a film is formed on the surface of the substrate.
The foregoing process is described in detail below with reference to the accompanying drawings.
Referring to fig. 2, a first step is performed to provide a substrate 201, and the substrate 201 is placed in a deposition chamber (not shown).
The deposition chamber is a deposition chamber of an atomic layer deposition apparatus, and the substrate 201 is transferred into the deposition chamber before a subsequent process is performed.
In an embodiment, the base 201 is a semiconductor substrate, and the material of the semiconductor substrate may be silicon (Si), germanium (Ge), or silicon germanium (GeSi), silicon carbide (SiC); or silicon-on-insulator (SOI), germanium-on-insulator (GOI); or may be other materials such as group iii-v compounds such as gallium arsenide.
In another embodiment, the base 201 includes a semiconductor substrate and one or more dielectric layers on the semiconductor substrate. The dielectric layer material can be silicon oxide, FSG (fluorine-doped silicon dioxide), BSG (boron-doped silicon dioxide), a low-K (K is less than 3) dielectric material or an ultra-low-K (K is less than 2.5) dielectric material.
In another embodiment, the substrate 201 has a raised semiconductor pattern on its surface, the raised semiconductor pattern may be a mask pattern, and a subsequently formed film covers the semiconductor pattern and the surface of the substrate.
Referring to fig. 3, in a second step, a first precursor gas 21 is introduced into the deposition chamber, and an adsorption layer 202 is formed on the surface of the substrate 201, where the duration of introducing the first precursor gas 21 is a first time.
When the first precursor gas 21 is introduced into the deposition chamber, the first precursor gas material is adsorbed on the surface of the substrate 201 to form an adsorption layer 202. In the second step, since the duration of the first time for introducing the first precursor gas 21 is short (generally, several tenths of a second to several seconds), the formed adsorption layer 202 is not completely adsorbed on the surface of the substrate 201 as in the prior art, the adsorption layer material atoms do not cover the upper portion of the substrate 201, and the thickness of the adsorption layer 202 is not uniform.
Referring to fig. 9, when the second step is performed, the flowing time of the first precursor gas 21 is the first time t1, that is, the first precursor gas is continuously flowed into the deposition chamber within the duration of the first time t1 to form an adsorption layer on the substrate surface, and the flowing of the first precursor gas into the deposition chamber is stopped after the first time t 1. In a specific embodiment, the time for introducing the first precursor gas into the deposition chamber is controlled by a control valve, when the control valve is opened, the first precursor gas is introduced into the deposition chamber, and when the control valve is closed, the introduction of the first precursor gas into the deposition chamber is stopped.
With continued reference to fig. 3, the first precursor gas 21 may be a different material depending on the material of the thin film to be formed. In this embodiment, the material for forming the thin film is silicon oxide.
In one embodiment, the first precursor gas is a silicon source gas, the flow rate of the silicon source gas is 0.1-15slm, the first time is 0.1S-50S, which may be 0.1S-5S, 0.1S-10S, the pressure of the deposition chamber is 1000mtorr-2000mtorr, and the temperature is 20 ℃ to 80 ℃.
In a specific embodiment, the silicon source gas is SiH3N(C3H7)2、SiH[N(CH3)2]3、HCDS、SiH2(NHtBu)2SAM-24 or H2Si[N(C2H5)2]2。
In other embodiments, the material of the thin film is silicon nitride, gallium nitride or titanium nitride. When the film material is silicon nitride, the first precursor gas is a silicon source gas; when the thin film material is gallium nitride, the first precursor gas is gallium source gas; when the film material is titanium nitride, the first precursor gas is a titanium source gas.
Referring to fig. 4, a third step is performed, in which the first precursor gas introduced into the deposition chamber continues to stay in the deposition chamber for a second time.
After the second step is performed, performing a third step, stopping supplying the first precursor gas into the deposition chamber when the third step is performed, and when the third step is performed, allowing the first precursor gas introduced into the deposition chamber during the second step to continue to stay in the deposition chamber for a second time, increasing the adsorption time, so that the remaining first precursor gas can continue to be adsorbed on the surface of the substrate 201, and thus the first precursor gas material can be adsorbed on the surface of the substrate 201 in a supersaturated manner, so that the interatomic adsorption in the adsorption layer 202 formed on the surface of the substrate 201 is supersaturated, and the closest stack is formed, and then after the remaining first precursor gas is discharged, the adsorption layer 202 formed on the substrate can be adsorbed on the surface of the substrate 201 uniformly and densely, so that the thickness of the adsorption layer 202 is relatively uniform, and the thickness of the monolayer thin film 203 (refer to fig. 6) formed by the reaction between the subsequently introduced second precursor gas and the adsorption layer 202 is relatively uniform, so that the rate of forming each single-layer film on the relatively uniform single-layer film 203 (refer to fig. 6) can be kept consistent, the thickness uniformity of each single-layer film is improved, and the thickness uniformity of the finally formed film 204 (refer to fig. 8) is improved. In the second step, the first time for introducing the first precursor gas 21 is short (generally, several tenths of a second to several seconds), so that the process cost can be reduced (the introduction amount of the first precursor gas is limited in the first time), but the problem of non-uniform film thickness can be solved through the third step (the first precursor gas is not introduced, so that the first precursor gas introduced into the deposition chamber in the second step continues to stay in the deposition chamber for the second time and stays for the second time).
Referring to fig. 9, step three is performed directly after step two, that is, after the step two lasts for the first time t1, step three is performed directly, so that the first precursor gas introduced into the deposition chamber during step two continues to stay in the deposition chamber for the second time t2, and the duration of step three is t 2.
Researches find that the second time cannot be too short, the adsorption is incomplete if the second time is too short, the second time cannot be too long, the adsorption reaches supersaturation after the adsorption reaches a certain time, the adsorption effect is greatly reduced, the uniformity of an adsorption layer cannot be greatly improved even if the time is increased, and the time of the manufacturing process is increased. In one embodiment, the second time is 1S to 50S, so that the first precursor gas material can be adsorbed on the substrate surface more saturated to form the adsorption layer 202 (refer to fig. 4).
Referring to fig. 5, after the step four, staying for the second time t2, the residual first precursor gas is exhausted.
The remaining first precursor gas may be purged by a pump connected to the process chamber for a duration of t3 (see fig. 9).
In the fourth step, N can be introduced into the deposition chamber2Or to perform evacuation.
Referring to fig. 6, a fifth step is performed, a second precursor gas 22 is introduced into the deposition chamber, and the second precursor gas 22 reacts with the adsorption layer 202 (refer to fig. 5) to form a monolayer 203 on the surface of the substrate 201.
The duration of the second precursor gas 22 is a third time t4 (refer to fig. 9), and the second precursor gas is simultaneously introduced and the radio frequency is applied, and the duration of the radio frequency application is also t4 (refer to fig. 9), so as to ionize the second precursor gas and form a plasma, and the plasma reacts with the adsorption layer 202 to form the monolayer film 203.
The introduction of the second precursor gas 22 is controlled by a control valve, when the control valve is opened, the second precursor gas 22 is introduced into the deposition chamber, and when the control valve is closed, the introduction of the second precursor gas 22 into the processing chamber is stopped. The second precursor gas 22 and the first precursor gas are fed in by different control valves.
In this embodiment, the material of the formed thin film is silicon oxide, the second precursor gas is oxygen source gas, and the oxygen source gas is dissociated into oxygen plasma to react with the adsorption layer, so as to form the single-layer film layer 203.
In one embodiment, the flow rate of the oxygen source gas is 0.1-15slm, the pressure of the deposition chamber is 1000-2000 mtorr, the temperature is 20-80 ℃, and the oxygen source gas is O2Or O3The thickness of the formed single-layer film layer 203 is 1nm-0.25 nm.
In other embodiments, when the thin film material is silicon nitride, the second precursor gas is a nitrogen source gas; when the film material is gallium nitride, the second precursor gas is a nitrogen source gas; and when the film material is titanium nitride, the second precursor gas is a nitrogen source gas.
Referring to fig. 7, a sixth step of exhausting residual second precursor gas and reaction byproducts is performed.
The remaining first precursor gas may be purged by a pump connected to the process chamber for a duration of t5 (see fig. 9).
The step two to the step 6 are a cycle of forming the monolayer film layer 203, and then a film meeting the thickness requirement is finally formed by carrying out a plurality of cycles.
Referring to fig. 8, steps two to six are repeated until a thin film 204 is formed on the substrate surface.
The repetition times of the second step to the sixth step are 10-500 times.
The thin film 204 having a uniform thickness, particularly a semiconductor pattern having a plurality of protrusions on the surface of the substrate, can be formed by the foregoing steps in the present invention, and the thin film formed to cover the semiconductor pattern having the protrusions and the substrate 201 can also have a uniform thickness.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Claims (11)
1. A method of forming a semiconductor thin film, comprising:
providing a substrate, and placing the substrate in a deposition chamber;
step two, introducing a first precursor gas into the deposition chamber, and forming an adsorption layer on the surface of the substrate, wherein the duration of introducing the first precursor gas is first time;
step three, the first precursor gas introduced into the deposition chamber in the step two continuously stays in the deposition chamber for a second time;
step four, after staying for a second time, discharging residual first precursor gas;
step five, introducing a second precursor gas into the deposition chamber, wherein the second precursor gas reacts with the adsorption layer to form a single-layer film layer on the surface of the substrate;
sixthly, discharging residual second precursor gas and reaction byproducts;
and repeating the second step to the sixth step until a film is formed on the surface of the substrate.
2. The method for forming a semiconductor film according to claim 1, wherein the duration of the second precursor gas is a third time, and the second precursor gas is simultaneously supplied and radio frequency is applied to ionize the second precursor gas.
3. The method for forming a semiconductor film according to claim 1 or 2, wherein a material of the film is silicon oxide.
4. The method of forming a semiconductor film according to claim 3, wherein the first precursor gas is a silicon source gas and the second precursor gas is an oxygen source gas.
5. The method for forming a semiconductor thin film according to claim 4, wherein the thickness of the single-layer film layer is 0.1nm to 0.25nm, and the thickness of the thin film is 1nm to 100 nm.
6. The method for forming a semiconductor thin film according to claim 4 or 5, wherein a flow rate of the silicon source gas is 0.1 to 15slm, a flow rate of the oxygen source gas is 0.1 to 15slm, a pressure of the deposition chamber is 1000mtorr to 2000mtorr, and a temperature is 20 ℃ to 80 ℃.
7. The method of forming a semiconductor film according to claim 6, wherein the silicon source gas is SiH3N(C3H7)2、SiH[N(CH3)2]3、HCDS、SiH2(NHtBu)2SAM-24 or H2Si[N(C2H5)2]2(ii) a The oxygen source gas is O2Or O3。
8. The method for forming a semiconductor thin film according to claim 6, wherein the first time is 0.1S to 50S, and the second time is 1S to 50S.
9. The method for forming a semiconductor thin film according to claim 1, wherein a material of the thin film is silicon nitride, gallium nitride, or titanium nitride.
10. The method of forming a semiconductor film according to claim 9, wherein when the film material is silicon nitride, the first precursor gas is a silicon source gas, and the second precursor gas is a nitrogen source gas; when the film material is gallium nitride, the first precursor gas is a gallium source gas, and the second precursor gas is a nitrogen source gas; when the film material is titanium nitride, the first precursor gas is a titanium source gas, and the second precursor gas is a nitrogen source gas.
11. The method for forming a semiconductor film according to claim 1, wherein the substrate has a plurality of the raised semiconductor patterns on a surface thereof, and the film covers the raised semiconductor patterns and the substrate.
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