CN112417690A - Method for correcting thermal fault simulation through environmental temperature field distribution - Google Patents
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Abstract
The application discloses a method for correcting thermal fault simulation through environmental temperature field distribution, which comprises the following steps: establishing a switch cabinet simulation model; setting simulation parameters of an internal environment and simulation parameters of the temperature field distribution of the shell of the switch cabinet based on a switch cabinet simulation model; acquiring simulation result data under a switch temperature field dynamic parameter adjusting module; comparing and judging the simulation result data with the corresponding experimental data; calculating a proportional coefficient of the difference between the simulation result data and the experimental result; judging the maximum value of the difference; simulation parameter corresponding relation and weighting system based on switch cabinet typical thermal fault simulation simulate other thermal faults of the switch cabinet. According to the embodiment of the invention, the experiment cost of thermal fault analysis of the switch cabinet is reduced and the accuracy of the result is improved by simulating the internal environment and the shell temperature field of the switch cabinet.
Description
Technical Field
The application relates to the technical field of switch cabinet fault simulation, in particular to a method for correcting thermal fault simulation through distribution of an environment temperature field.
Background
The switch cabinet is common power transmission and distribution equipment and plays a role in control or protection in the power transmission and distribution process. The inside isolator, circuit breaker and relevant protection device that has contained of cubical switchboard can break the equipment of interconnect through its isolator when electric power system breaks down, has protected the power equipment of connection simultaneously also protected electric power operating personnel's safety on the one hand. It follows that the switchgear plays a very important role in the power system. Various heating faults can be caused in the switch cabinet inevitably in the processes of manufacturing, distribution, installation, operation, maintenance and the like of the switch cabinet. If the internal state of the switch cabinet is not found early and the switch cabinet is allowed to develop to a serious degree, the insulation damage in the switch cabinet is finally caused to cause safety accidents, and huge economic loss and negative social influence are brought to power generation enterprises.
At present, the fault of the switch cabinet, especially the thermal fault, is researched mainly by an experimental simulation mode. The experimental simulation mode has high accuracy, but the required time period is long and the cost is high. The analog simulation mode can avoid high cost and long time period, but the result precision difference is large.
Disclosure of Invention
The purpose of this application lies in solving the technical problem that exists among the prior art at least, provides a method through the simulation of environmental temperature field distribution correction thermal fault, reduces cubical switchboard thermal fault analysis's experimental cost through the simulation to cubical switchboard internal environment and shell temperature field, improves the accuracy of result.
The embodiment of the application provides a method for correcting thermal fault simulation through environmental temperature field distribution, which comprises the following steps:
establishing a switch cabinet simulation model, wherein a switch cabinet temperature field dynamic parameter adjusting module and an equivalent heat source parameter module are matched in the switch cabinet simulation model, an adjusting mechanism for internal environment parameters and switch cabinet shell temperature field distribution parameters is arranged in the switch cabinet temperature field dynamic parameter adjusting module, and a plurality of switch cabinet main part temperature field distribution simulation values meeting a preset experimental data threshold value are stored in the equivalent heat source parameter module;
setting simulation parameters of an internal environment and simulation parameters of the temperature field distribution of the shell of the switch cabinet based on a switch cabinet simulation model;
acquiring simulation result data under a switch temperature field dynamic parameter adjusting module based on the simulation parameters of the internal environment and the simulation parameters distributed in the switch cabinet shell temperature field, wherein the simulation result data comprises: simulation result data of the distribution of the temperature field in the switch cabinet and simulation result data of the distribution of the temperature field of the shell of the switch cabinet;
comparing and judging the simulation result data with the corresponding experiment data, if the simulation result data is judged to be lower than a preset experiment data threshold value, entering the next step, otherwise, adjusting the simulation parameters of the internal environment in the switch temperature field dynamic parameter adjusting module and the simulation parameters distributed in the switch cabinet shell temperature field;
the trigger equivalent heat source parameter module is matched with a simulated value of the temperature field distribution of a main part of the switch cabinet;
performing gradient sorting of result difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet, and calculating a proportional coefficient of the simulation result data and the experimental result difference;
judging the maximum difference value based on the simulation result data, entering the next step if the maximum difference value is met, and otherwise, setting simulation parameters in a dynamic parameter adjusting module of the temperature field of the switch cabinet based on the proportional coefficient of the difference between the simulation result data and the experimental result;
when the maximum difference value is met, performing mean value calculation of experimental data difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet;
judging whether the mean value of the experimental data difference is lower than a mean value threshold value or not, if so, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet, and if not, triggering and adjusting the simulation parameters in a dynamic parameter adjusting module of the temperature field of the switch cabinet;
simulation parameter corresponding relation and weighting system based on switch cabinet typical thermal fault simulation simulate other thermal faults of the switch cabinet.
In the method, a bus chamber, a breaker chamber, a cable chamber, an instrument chamber and a trolley chamber are constructed in equal proportion according to an actual switch cabinet structure, small parts are omitted, and only main parts of a copper bar and an insulation part are reserved and distributed in the bus chamber, the breaker chamber and the cable chamber.
The simulation parameters of the distribution of the temperature field of the switch cabinet shell comprise: the heat exchange coefficient of the cabinet body and external environmental parameters.
When the simulation result data are judged to be not lower than the preset experimental data threshold, the simulation parameters of the internal environment under the switch temperature field dynamic parameter adjusting module and the simulation parameters of the switch cabinet shell temperature field distribution are as follows: adjusting the internal pressure, humidity and initial temperature of the switch cabinet according to the proportion of +/-5% each time; and adjusting the external pressure, humidity, initial temperature and heat transfer coefficient between the cabinet body and the external environment according to the proportion of +/-5% each time.
The proportion coefficient of the difference between the simulation result data and the experimental result is as follows:
wherein: the method comprises the following steps that a% is the percentage of difference between the temperature field distribution of main components of the switch cabinet and an experimental result, B% is the percentage of difference between the temperature field distribution inside the switch cabinet and the experimental result, C% is the percentage of difference between the temperature field distribution of the shell of the switch cabinet and the experimental result, A is the proportional coefficient of the temperature field distribution of the main components of the switch cabinet, B is the proportional coefficient of the temperature field distribution inside the switch cabinet, and C is the proportional coefficient of the temperature field distribution of the shell of the switch cabinet.
The setting of the simulation parameters in the dynamic parameter adjustment module of the temperature field of the switch cabinet based on the proportionality coefficient of the difference between the simulation result data and the experimental result comprises the following steps:
adjusting simulation parameters of the internal environment according to the proportion coefficient within +/-3% each time;
and adjusting the simulation parameters of the heat exchange coefficient and the external environment parameters of the cabinet body according to the proportional coefficient within +/-3% each time.
The simulation parameters in the dynamic parameter adjusting module for triggering and adjusting the temperature field of the switch cabinet comprise:
and adjusting the simulation parameters of the internal environment and the simulation parameters of the distribution of the temperature field of the shell of the switch cabinet by adopting a genetic algorithm taking the minimum difference mean value as a target function.
Compared with the prior art, the simulation parameter setting of the internal environment and the shell temperature field in the thermal fault simulation model of the switch cabinet is corrected based on typical thermal fault simulation experiment data of the switch cabinet in the embodiment, the cost and the period of thermal fault simulation analysis of the switch cabinet are reduced, and the analysis precision and the result accuracy are improved.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a method for correcting thermal fault simulation via ambient temperature field distribution in an embodiment of the invention;
fig. 2 is a block diagram of a typical thermal fault experimental simulation process of a switchgear in an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The method for correcting thermal fault simulation through environmental temperature field distribution in the embodiment of the invention comprises the following steps: establishing a switch cabinet simulation model, wherein a switch cabinet temperature field dynamic parameter adjusting module and an equivalent heat source parameter module are matched in the switch cabinet simulation model, an adjusting mechanism for internal environment parameters and switch cabinet shell temperature field distribution parameters is arranged in the switch cabinet temperature field dynamic parameter adjusting module, and a plurality of switch cabinet main part temperature field distribution simulation values meeting a preset experimental data threshold value are stored in the equivalent heat source parameter module; setting simulation parameters of an internal environment and simulation parameters of the temperature field distribution of the shell of the switch cabinet based on a switch cabinet simulation model; acquiring simulation result data under a switch temperature field dynamic parameter adjusting module based on the simulation parameters of the internal environment and the simulation parameters distributed in the switch cabinet shell temperature field, wherein the simulation result data comprises: simulation result data of the distribution of the temperature field in the switch cabinet and simulation result data of the distribution of the temperature field of the shell of the switch cabinet; comparing and judging the simulation result data with the corresponding experiment data, if the simulation result data is judged to be lower than a preset experiment data threshold value, entering the next step, otherwise, adjusting the simulation parameters of the internal environment under the module for adjusting the dynamic parameters of the switch temperature field and the simulation parameters distributed in the switch cabinet shell temperature field; the trigger equivalent heat source parameter module is matched with a simulated value of the temperature field distribution of a main part of the switch cabinet; performing gradient sorting of result difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet, and calculating a proportional coefficient of the simulation result data and the experimental result difference; judging the maximum difference value based on the simulation result data, entering the next step if the maximum difference value is met, and otherwise, setting simulation parameters in a dynamic parameter adjusting module of the temperature field of the switch cabinet based on the proportional coefficient of the difference between the simulation result data and the experimental result; when the maximum difference value is met, performing mean value calculation of experimental data difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet; judging whether the mean value of the experimental data difference is lower than a mean value threshold value or not, if so, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet, and if not, triggering and adjusting the simulation parameters in a dynamic parameter adjusting module of the temperature field of the switch cabinet; simulation parameter corresponding relation and weighting system based on switch cabinet typical thermal fault simulation simulate other thermal faults of the switch cabinet.
The simulation parameter setting of the internal environment and the shell temperature field in the thermal fault simulation model of the switch cabinet is corrected based on the typical thermal fault simulation experiment data of the switch cabinet, the cost and the period of the thermal fault simulation analysis of the switch cabinet are reduced, and the analysis precision and the result accuracy are improved.
Specifically, fig. 1 shows a method for correcting thermal fault simulation through environmental temperature field distribution in an embodiment of the present invention, which includes the following steps:
s101, establishing a switch cabinet simulation model;
specifically, a switch cabinet temperature field dynamic parameter adjusting module and an equivalent heat source parameter module are matched in the switch cabinet simulation model, an adjusting mechanism for internal environment parameters and switch cabinet shell temperature field distribution parameters is arranged in the switch cabinet temperature field dynamic parameter adjusting module, a plurality of switch cabinet main part temperature field distribution simulation values meeting a preset experimental data threshold value are stored in the equivalent heat source parameter module, and the series values of the switch cabinet main part temperature field distribution simulation values meet the adjusting mechanism for the internal environment parameters and the switch cabinet shell temperature field distribution parameters in the simulation environment of the embodiment of the invention. The percentage of experimental result difference and the like corresponding to the temperature field distribution simulation values of the main components of the switch cabinet are obtained, the simulation parameters are readjusted by continuously triggering internal environment parameters and switch cabinet shell temperature field distribution parameters in a simulation environment due to different thresholds, so that the quick correction and matching of a switch cabinet simulation model are realized by combining the internal environment and the switch cabinet shell temperature field, and the quick simulation process of corresponding model correction based on the internal environment and the switch cabinet shell temperature field is realized.
In the method, a bus chamber, a breaker chamber, a cable chamber, an instrument chamber and a trolley chamber are constructed in equal proportion according to an actual switch cabinet structure, small parts are omitted, and only main parts of a copper bar and an insulation part are reserved and distributed in the bus chamber, the breaker chamber and the cable chamber. During specific implementation, the fixing screws are omitted, small parts such as holes with the diameter smaller than 2cm, protrusions and gaps smaller than 2mm are omitted, only main parts of the copper bars and the insulation parts are reserved and replaced by regular bodies such as cuboids and cylinders, the main parts are distributed in a bus room, a breaker room and a cable room, and the instrument room and the trolley room are empty rooms. In practical application, the neglected tiny part is determined according to time requirements, and the substitution of the main component is determined according to requirements of practical simulation precision, calculated amount and the like.
The setting of the simulation parameters comprises four main parameters of an equivalent heat source, internal environment parameters, cabinet heat exchange coefficients and external environment parameters. The equivalent heat source is a body heat source, determined as 2 × 2cm3 in the present embodiment, and the adjustable parameter of the equivalent heat source is power; the internal environment parameters comprise main environment parameters such as internal pressure, humidity and initial temperature of the switch cabinet; the heat exchange coefficient of the cabinet body is the heat transfer coefficient between the cabinet body and the external environment; the external environment parameters comprise main environment parameters such as external pressure, humidity and initial temperature of the switch cabinet. The cabinet body heat exchange coefficient and the external environment parameter jointly form the distribution influence parameter of the switch cabinet shell temperature field. In practical application, the types of the internal and external environment parameters of the switch cabinet are selected according to the actual requirements of the simulation environment.
S102, setting simulation parameters of an internal environment and simulation parameters of the distribution of the temperature field of the shell of the switch cabinet based on a switch cabinet simulation model;
it should be noted that, here, the simulation parameters of the distribution of the temperature field of the enclosure of the switch cabinet include: the heat exchange coefficient of the cabinet body and external environmental parameters. The heat exchange coefficient of the cabinet body is the heat transfer coefficient between the cabinet body and the external environment; the external environment parameters comprise main environment parameters such as external pressure, humidity and initial temperature of the switch cabinet. The heat exchange coefficient of the cabinet body and the external environment parameters jointly form the distribution influence parameters of the temperature field of the shell of the switch cabinet.
The internal environmental parameters include main environmental parameters such as internal pressure, humidity and initial temperature of the switch cabinet.
S103, acquiring simulation result data under a switch temperature field dynamic parameter adjusting module based on the simulation parameters of the internal environment and the simulation parameters distributed in the switch cabinet shell temperature field;
it should be noted that the simulation result data includes: simulation result data of the distribution of the temperature field in the switch cabinet and simulation result data of the distribution of the temperature field of the shell of the switch cabinet.
S104, comparing and judging the simulation result data with the corresponding experimental data;
if the simulation result data is lower than the preset experimental data threshold value, the next step S105 is carried out, otherwise, the simulation parameters of the internal environment under the dynamic parameter adjusting module of the switch temperature field and the simulation parameters of the switch cabinet shell temperature field distribution are adjusted, and the step S102 is carried out.
In the specific implementation process, when the simulation result data is judged to be not lower than the preset experimental data threshold, the adjusting of the simulation parameters of the distribution of the temperature field of the switch cabinet shell in the simulation model comprises the following steps: the external pressure, humidity, initial temperature and heat transfer coefficient between the cabinet body and the external environment are adjusted according to the proportion of +/-5% each time. When the simulation result data of the internal temperature field distribution of the switch cabinet is judged to be not lower than the preset experimental data threshold, adjusting the simulation parameters of the internal environment in the simulation model comprises the following steps: the internal pressure, humidity and initial temperature of the switch cabinet are adjusted according to the proportion of +/-5% each time. In practical application, preset experimental data threshold values, adjusting ratios and the like are set according to practical requirements.
S105, matching the equivalent heat source parameter triggering module with a simulated value of the temperature field distribution of the main components of the switch cabinet;
and when the simulation result data of the distribution of the internal temperature field of the switch cabinet and the simulation result data of the distribution of the shell temperature field of the switch cabinet are determined to simultaneously meet corresponding conditions, triggering corresponding simulation value matching, and realizing a corresponding simulation precision correction process of the distribution of the internal temperature field of the switch cabinet and the distribution of the shell temperature field of the switch cabinet, so that the switch cabinet has corresponding typical thermal fault simulation experiment data of the switch office as a support to analyze and achieve a corresponding analysis result.
S106, performing gradient sorting of result difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet, and calculating a proportionality coefficient of the simulation result data and the experimental result difference;
the proportional coefficient of the difference between the calculation simulation result data and the experimental result is as follows:
in this embodiment, a% is a percentage of difference between the distribution of the temperature field of the main components of the switch cabinet and the experimental result, B% is a percentage of difference between the distribution of the temperature field of the interior of the switch cabinet and the experimental result, C% is a percentage of difference between the distribution of the temperature field of the shell of the switch cabinet and the experimental result, a is a proportionality coefficient of the distribution of the temperature field of the main components of the switch cabinet, B is a proportionality coefficient of the distribution of the temperature field of the interior of the switch cabinet, and C is a proportionality coefficient of the distribution of the.
S107, judging the maximum difference value based on simulation result data;
and if the difference maximum value is met, the next step S108 is carried out, otherwise, simulation parameters of the internal environment are set based on the simulation result data distributed in the internal temperature field of the switch cabinet and the proportional coefficient of the experimental result difference, and the simulation parameters distributed in the shell temperature field of the switch cabinet are set based on the simulation result data distributed in the shell temperature field of the switch cabinet and the proportional coefficient of the experimental result difference, namely the step S102 is carried out.
Here, the setting of the simulation parameters in the dynamic parameter adjustment module of the temperature field of the switch cabinet based on the proportional coefficient of the difference between the simulation result data and the experimental result includes: adjusting simulation parameters of the internal environment according to the proportion coefficient within +/-3% each time; and adjusting the simulation parameters of the heat exchange coefficient and the external environment parameters of the cabinet body according to the proportional coefficient within +/-3% each time.
S108, when the maximum difference value is met, performing mean value calculation of experimental data difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet;
it should be noted that, in the mean value calculation of the temperature field distribution and the experimental data difference at different positions, the mean value calculation formula is as follows:
s109, judging whether the mean value of the experimental data difference is lower than a mean value threshold value or not;
and if the simulation parameter corresponding relation and the weighting system of the typical thermal fault simulation of the switch cabinet are lower than the mean threshold, the simulation parameter corresponding relation and the weighting system enter S110, and if the simulation parameter corresponding relation and the weighting system do not meet the mean threshold, the simulation parameter in the dynamic parameter adjusting module of the temperature field of the switch cabinet is triggered to be adjusted, namely, the simulation parameter enters S102 again to be processed correspondingly.
Here, the simulation parameters for triggering and adjusting the equivalent heat source of the simulation model include: and adjusting the simulation parameters of the distribution of the temperature field of the shell of the switch cabinet by adopting a genetic algorithm taking the minimum difference mean value as a target function.
The mean threshold value is that the maximum value of the difference between the simulation result and the experimental data is lower than 5%, and in practical application, the mean threshold value is set according to actual requirements.
S110, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet;
the simulation parameter corresponding relation and the weighting coefficient of the typical thermal fault simulation of the switch cabinet are determined, and the corresponding relation between the equivalent heat source, the internal environment parameter, the cabinet body heat exchange coefficient, the external environment parameter and the weighting coefficient of the typical thermal fault simulation of the switch cabinet and the typical thermal fault of the switch cabinet is summarized.
And S111, simulating other thermal faults of the switch cabinet based on the corresponding relation of the simulation parameters of the typical thermal fault simulation of the switch cabinet and the corresponding relation of the weighting system and the typical thermal fault of the switch cabinet.
And simulating other types of thermal faults of the switch cabinet, namely, according to the summarized corresponding relation between the typical thermal fault equivalent heat source, the internal environment parameter, the cabinet body heat exchange coefficient, the external environment parameter and the weighting coefficient of the switch cabinet and the typical thermal fault of the switch cabinet, regularly setting the equivalent heat source, the internal environment parameter, the cabinet body heat exchange coefficient and the external environment parameter to simulate other thermal faults of the switch cabinet.
Referring to fig. 2, in steps S104, S107, and S109, a typical thermal fault simulation experiment of the switch cabinet is performed by the experiment data source and the experiment platform, and the model number of the switch cabinet used by the experiment platform is consistent with that of the simulation model switch cabinet. The experimental simulation process of the typical thermal fault of the switch cabinet comprises the following steps: building a K1 switch cabinet thermal fault simulation experiment platform; typical thermal fault experimental simulation of a K2 switch cabinet; typical thermal fault experimental data of the K3 switch cabinet were recorded and analyzed.
Further, the K3 cubical switchboard typical thermal fault experimental data record and analysis includes: the temperature field distribution of main components of the K3-1 switch cabinet thermal fault; k3-2 switch cabinet thermal fault internal temperature field distribution; k3-3 cubical switchboard thermal failure shell temperature field distribution.
Further, in the steps S104, S107 and S109, the experimental data comprise the model of the switch cabinet, the internal environmental parameters of the switch cabinet, the external environmental parameters of the switch cabinet, the typical fault type and the temperature field distribution of the main components of the K3-1 switch cabinet thermal fault of the built experimental platform; k3-2 switch cabinet thermal fault internal temperature field distribution; k3-3 cubical switchboard thermal failure shell temperature field distribution etc.
The above embodiments of the present invention are described in detail, and the principle and the implementation manner of the present invention should be described herein by using specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (7)
1. A method for correcting thermal fault simulation through ambient temperature field distribution, the method comprising:
establishing a switch cabinet simulation model, wherein a switch cabinet temperature field dynamic parameter adjusting module and an equivalent heat source parameter module are matched in the switch cabinet simulation model, an adjusting mechanism for internal environment parameters and switch cabinet shell temperature field distribution parameters is arranged in the switch cabinet temperature field dynamic parameter adjusting module, and a plurality of switch cabinet main part temperature field distribution simulation values meeting a preset experimental data threshold value are stored in the equivalent heat source parameter module;
setting simulation parameters of an internal environment and simulation parameters of the temperature field distribution of the shell of the switch cabinet based on a switch cabinet simulation model;
acquiring simulation result data under a switch temperature field dynamic parameter adjusting module based on the simulation parameters of the internal environment and the simulation parameters distributed in the switch cabinet shell temperature field, wherein the simulation result data comprises: simulation result data of the distribution of the temperature field in the switch cabinet and simulation result data of the distribution of the temperature field of the shell of the switch cabinet;
comparing and judging the simulation result data with the corresponding experiment data, if the simulation result data is judged to be lower than a preset experiment data threshold value, entering the next step, otherwise, adjusting the simulation parameters of the internal environment in the switch temperature field dynamic parameter adjusting module and the simulation parameters distributed in the switch cabinet shell temperature field;
the trigger equivalent heat source parameter module is matched with a simulated value of the temperature field distribution of a main part of the switch cabinet;
performing gradient sorting of result difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet, and calculating a proportional coefficient of the simulation result data and the experimental result difference;
judging the maximum difference value based on the simulation result data, entering the next step if the maximum difference value is met, and otherwise, setting simulation parameters in a dynamic parameter adjusting module of the temperature field of the switch cabinet based on the proportional coefficient of the difference between the simulation result data and the experimental result;
when the maximum difference value is met, performing mean value calculation of experimental data difference based on simulation values of temperature field distribution of main components of the switch cabinet, simulation result data of internal temperature field distribution of the switch cabinet and simulation result data of shell temperature field distribution of the switch cabinet;
judging whether the mean value of the experimental data difference is lower than a mean value threshold value or not, if so, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet, and if not, triggering and adjusting the simulation parameters in a dynamic parameter adjusting module of the temperature field of the switch cabinet;
simulation parameter corresponding relation and weighting system based on switch cabinet typical thermal fault simulation simulate other thermal faults of the switch cabinet.
2. The method for correcting thermal fault simulation through environmental temperature field distribution according to claim 1, wherein in the building of the switch cabinet simulation model, five parts of the bus bar room, the circuit breaker room, the cable room, the instrument room and the trolley room are built in equal proportion according to an actual switch cabinet structure, tiny parts are omitted, and only main parts of the copper bar and the insulation part are reserved and distributed in the bus bar room, the circuit breaker room and the cable room.
3. The method for thermal fault simulation with correction of ambient temperature field distribution according to claim 2, wherein the simulation parameters of the switchgear enclosure temperature field distribution include: the heat exchange coefficient of the cabinet body and external environmental parameters.
4. The method according to claim 3, wherein when the simulation result data is determined to be not lower than the preset experimental data threshold, the method adjusts the simulation parameters of the internal environment in the switch temperature field dynamic parameter adjusting module and the simulation parameters of the switch cabinet shell temperature field distribution by: adjusting the internal pressure, humidity and initial temperature of the switch cabinet according to the proportion of +/-5% each time; and adjusting the external pressure, humidity, initial temperature and heat transfer coefficient between the cabinet body and the external environment according to the proportion of +/-5% each time.
5. The method for thermal fault simulation with correction of environmental temperature field distribution according to claim 4, wherein the proportionality coefficient of the simulation result data to the experimental result difference is:
wherein: the method comprises the following steps that a% is the percentage of difference between the temperature field distribution of main components of the switch cabinet and an experimental result, B% is the percentage of difference between the temperature field distribution inside the switch cabinet and the experimental result, C% is the percentage of difference between the temperature field distribution of the shell of the switch cabinet and the experimental result, A is the proportional coefficient of the temperature field distribution of the main components of the switch cabinet, B is the proportional coefficient of the temperature field distribution inside the switch cabinet, and C is the proportional coefficient of the temperature field distribution of the shell of the switch cabinet.
6. The method according to claim 5, wherein the setting of the simulation parameters in the dynamic parameter adjustment module of the temperature field of the switchgear based on the scaling factor of the difference between the simulation result data and the experimental result comprises:
adjusting simulation parameters of the internal environment according to the proportion coefficient within +/-3% each time;
and adjusting the simulation parameters of the heat exchange coefficient and the external environment parameters of the cabinet body according to the proportional coefficient within +/-3% each time.
7. The method according to claim 6, wherein the triggering and adjusting the simulation parameters in the switch cabinet temperature field dynamic parameter adjusting module comprises:
and adjusting the simulation parameters of the internal environment and the simulation parameters of the distribution of the temperature field of the shell of the switch cabinet by adopting a genetic algorithm taking the minimum difference mean value as a target function.
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| CN112417672A (en) * | 2020-11-18 | 2021-02-26 | 广西电网有限责任公司电力科学研究院 | Method for correcting thermal fault simulation based on internal environment parameters |
| CN113739926A (en) * | 2021-07-20 | 2021-12-03 | 中车唐山机车车辆有限公司 | Method and device for detecting temperature rise fault of train electric appliance cabinet and terminal equipment |
| CN117666659A (en) * | 2024-02-01 | 2024-03-08 | 山东安信种苗股份有限公司 | Greenhouse seedling raising and cooling control method, system and terminal |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112417672A (en) * | 2020-11-18 | 2021-02-26 | 广西电网有限责任公司电力科学研究院 | Method for correcting thermal fault simulation based on internal environment parameters |
| CN112417672B (en) * | 2020-11-18 | 2024-05-10 | 广西电网有限责任公司电力科学研究院 | Thermal fault simulation correcting method based on internal environment parameters |
| CN113739926A (en) * | 2021-07-20 | 2021-12-03 | 中车唐山机车车辆有限公司 | Method and device for detecting temperature rise fault of train electric appliance cabinet and terminal equipment |
| CN113739926B (en) * | 2021-07-20 | 2023-04-18 | 中车唐山机车车辆有限公司 | Method and device for detecting temperature rise fault of train electric appliance cabinet and terminal equipment |
| CN117666659A (en) * | 2024-02-01 | 2024-03-08 | 山东安信种苗股份有限公司 | Greenhouse seedling raising and cooling control method, system and terminal |
| CN117666659B (en) * | 2024-02-01 | 2024-04-26 | 山东安信种苗股份有限公司 | Greenhouse seedling raising and cooling control method, system and terminal |
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