CN112417672B - Thermal fault simulation correcting method based on internal environment parameters - Google Patents
Thermal fault simulation correcting method based on internal environment parameters Download PDFInfo
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- CN112417672B CN112417672B CN202011294033.3A CN202011294033A CN112417672B CN 112417672 B CN112417672 B CN 112417672B CN 202011294033 A CN202011294033 A CN 202011294033A CN 112417672 B CN112417672 B CN 112417672B
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Abstract
The application discloses a method for correcting thermal fault simulation based on internal environment parameters, which comprises the following steps: establishing a switch cabinet simulation model; setting simulation parameters of an internal environment based on a simulation model; acquiring simulation result data of the distribution of the internal temperature field of the switch cabinet based on the simulation parameters of the internal environment; comparing and judging simulation result data of the temperature field distribution in the switch cabinet with experimental data of the temperature field distribution in the corresponding switch cabinet; calculating a proportionality coefficient of the difference between simulation result data and experimental result of the temperature field distribution in the switch cabinet; judging the maximum value of the difference; simulation parameter corresponding relation based on the simulation of the typical thermal faults of the switch cabinet and corresponding relation between the weighting system and the typical thermal faults of the switch cabinet simulate other thermal faults of the switch cabinet. According to the embodiment of the application, the experimental cost of the thermal fault analysis of the switch cabinet is reduced based on the simulation of the internal environment, and the accuracy of the result is improved.
Description
Technical Field
The application relates to the technical field of switch cabinet fault simulation, in particular to a method for correcting thermal fault simulation based on internal environment parameters.
Background
The switch cabinet is common power transmission and distribution equipment and plays a role in control or protection in the power transmission and distribution process. The inside isolator, circuit breaker and the relevant protection device that have contained of cubical switchboard can break away interconnect's equipment through its isolator when electric power system breaks down, has protected the power equipment of connection on the one hand and has also protected electric power operating personnel's safety simultaneously. It follows that the switchgear plays a very important role in the power system. In the processes of manufacturing, distribution, installation, operation, overhaul and the like, various heating faults in the switch cabinet are inevitably caused. If the state inside the switch cabinet is not found early and the switch cabinet is developed to the severity, the insulation damage inside the switch cabinet is finally caused to cause safety accidents, and huge economic loss and negative social influence are brought to power generation enterprises.
At present, the research on the faults of the switch cabinet, particularly the analysis on the thermal faults, is mainly performed by an experimental simulation mode. The experimental simulation mode has high accuracy, but the required time period is long and the cost is high. The simulation mode can avoid high cost and long time period, but the difference of the result precision is large.
Disclosure of Invention
The application aims to at least solve the technical problems in the prior art, and provides a method for correcting thermal fault simulation based on internal environment parameters, which reduces the experimental cost of thermal fault analysis of a switch cabinet based on the simulation of the internal environment and improves the accuracy of results.
The embodiment of the application provides a method for correcting thermal fault simulation based on internal environment parameters, which comprises the following steps:
Establishing a switch cabinet simulation model, wherein an equivalent heat source parameter module and a switch cabinet shell temperature field distribution influence parameter module are matched in the switch cabinet simulation model, the equivalent heat source parameter module stores a plurality of switch cabinet main component temperature field distribution simulation values meeting a preset experimental data threshold, and the switch cabinet shell temperature field distribution influence parameter module stores a plurality of switch cabinet shell temperature field distribution simulation values meeting the preset experimental data threshold;
setting simulation parameters of an internal environment based on a simulation model;
Acquiring simulation result data of the distribution of the internal temperature field of the switch cabinet based on the simulation parameters of the internal environment;
Comparing and judging simulation result data of the temperature field distribution in the switch cabinet with experimental data of the temperature field distribution in the corresponding switch cabinet, if the simulation result data of the temperature field distribution in the switch cabinet is lower than a preset experimental data threshold value, entering the next step, otherwise, adjusting simulation parameters of an internal environment in a simulation model;
Triggering the equivalent heat source parameter module to match a switch cabinet main component temperature field distribution simulation value, triggering the switch cabinet shell temperature field distribution influence parameter module to match a switch cabinet shell temperature field distribution simulation value;
Gradient sorting of result differences is carried out based on simulation result data of temperature field distribution in the switch cabinet, simulation value of temperature field distribution of main components of the switch cabinet and simulation value of temperature field distribution of a shell of the switch cabinet, and a proportionality coefficient of the simulation result data of the temperature field distribution in the switch cabinet and the experiment result differences is calculated;
Judging the maximum difference value based on simulation result data of the temperature field distribution in the switch cabinet, if the maximum difference value is met, entering the next step, otherwise, setting simulation parameters of the internal environment based on the proportion coefficient of the difference between the simulation result data of the temperature field distribution in the switch cabinet and the experimental result;
When the maximum difference value is met, carrying out average value calculation of experimental data difference based on simulation result data of temperature field distribution inside the switch cabinet, simulation value of temperature field distribution of a main part of the switch cabinet and simulation value of temperature field distribution of a shell of the switch cabinet;
judging whether the average value of the experimental data difference is lower than an average value threshold value, if so, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet, and if not, triggering and adjusting simulation parameters of the internal environment of the simulation model;
Simulation parameter corresponding relation based on the simulation of the typical thermal faults of the switch cabinet and corresponding relation between the weighting system and the typical thermal faults of the switch cabinet simulate other thermal faults of the switch cabinet.
In the process of establishing the switch cabinet simulation model, according to the actual switch cabinet structure, five parts of a bus chamber, a breaker chamber, a cable chamber, an instrument chamber and a trolley chamber are built in equal proportion, tiny parts are omitted, only main parts of copper bars and insulating parts are reserved, and the copper bars and the insulating parts are distributed in the bus chamber, the breaker chamber and the cable chamber.
When judging that the simulation result data of the distribution of the internal temperature field of the switch cabinet is not lower than a preset experimental data threshold, adjusting the simulation parameters of the internal environment in the simulation model comprises: the internal pressure, humidity and initial temperature of the switch cabinet are adjusted according to the proportion of +/-5% each time.
The proportionality coefficient of the simulation result data and the experimental result difference of the temperature field distribution in the calculation switch cabinet is as follows:
Wherein: a% is the percentage of the difference between the temperature field distribution of the main part of the switch cabinet and the experimental result, B% is the percentage of the difference between the temperature field distribution of the inside of the switch cabinet and the experimental result, C% is the percentage of the difference between the temperature field distribution of the shell of the switch cabinet and the experimental result, A is the proportionality coefficient of the temperature field distribution of the main part of the switch cabinet, B is the proportionality coefficient of the temperature field distribution of the inside of the switch cabinet, and C is the proportionality coefficient of the temperature field distribution of the shell of the switch cabinet.
The setting of the simulation parameters of the internal environment based on the proportionality coefficient of the simulation result data and the experimental result difference of the temperature field distribution in the switch cabinet comprises the following steps:
the simulation parameters of the internal environment were adjusted by + -3% each time following the scaling factor.
The triggering and adjusting the simulation parameters of the internal environment of the simulation model comprises the following steps:
and adjusting simulation parameters of the internal environment by adopting a genetic algorithm with the minimum difference mean value as an objective function.
Compared with the prior art, the method and the device for simulating the thermal faults of the switch cabinet based on the simulation experimental data of the typical thermal faults of the switch cabinet correct simulation parameter setting of the internal environment in the thermal fault simulation model of the switch cabinet, reduce cost and period of simulation analysis of the thermal faults of the switch cabinet, and improve analysis precision and result accuracy.
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In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for correcting thermal fault simulation based on internal environmental parameters in an embodiment of the invention;
Fig. 2 is a block diagram of a typical thermal fault experimental simulation process of a switchgear in an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Specifically, fig. 1 shows a flowchart of a method for correcting thermal fault simulation based on internal environment parameters in an embodiment of the present invention, including the following steps:
S101, establishing a switch cabinet simulation model;
Specifically, an equivalent heat source parameter module and a switch cabinet shell temperature field distribution influence parameter module are matched in the switch cabinet simulation model, the equivalent heat source parameter module stores a plurality of switch cabinet main component temperature field distribution simulation values meeting a preset experimental data threshold, and the switch cabinet shell temperature field distribution influence parameter module stores a plurality of switch cabinet shell temperature field distribution simulation values meeting the preset experimental data threshold. The temperature field distribution simulation value of the main part of the switch cabinet, the percentage of the experimental result difference corresponding to the temperature field distribution simulation value of the switch cabinet shell, and the like.
In the process of establishing the switch cabinet simulation model, according to the actual switch cabinet structure, five parts of a bus chamber, a breaker chamber, a cable chamber, an instrument chamber and a trolley chamber are built in equal proportion, tiny parts are omitted, only main parts of copper bars and insulating parts are reserved, and the copper bars and the insulating parts are distributed in the bus chamber, the breaker chamber and the cable chamber. In the concrete implementation, the fixing screws, holes and protrusions with diameters smaller than 2cm, gaps smaller than 2mm and other tiny components are omitted, only main components of the copper bars and the insulating parts are reserved, regular bodies such as cuboid, cylinder and the like are used for replacing the main components, and the main components are distributed in a bus chamber, a breaker chamber and a cable chamber, and an instrument chamber and a trolley chamber are empty chambers. In practical application, the neglected tiny part is determined according to time requirements, and the replacement of the main component is determined according to requirements of practical simulation precision, calculated amount and the like.
The simulation parameters are set by four main parameters including equivalent heat source, internal environment parameters, cabinet heat exchange coefficient and external environment parameters. The equivalent heat source is a heat source, in this embodiment, it is determined that 2×2cm3, and the adjustable parameter of the equivalent heat source is power; the internal environment parameters comprise main environment parameters such as internal pressure, humidity, initial temperature and the like of the switch cabinet; the heat exchange coefficient of the cabinet body is the heat transfer coefficient between the cabinet body and the external environment; the external environment parameters comprise main environment parameters such as external pressure, humidity, initial temperature and the like of the switch cabinet. The heat exchange coefficient of the cabinet body and the external environment parameters jointly form the temperature field distribution influence parameter of the switch cabinet shell. In practical application, the types of the internal and external environment parameters of the switch cabinet are selected according to the practical requirements of the simulation environment.
S102, setting simulation parameters of an internal environment based on a simulation model;
The internal environmental parameters include the main environmental parameters such as internal pressure, humidity, initial temperature, etc. of the switch cabinet.
S103, acquiring simulation result data of the distribution of the internal temperature field of the switch cabinet based on the simulation parameters of the internal environment;
S104, comparing and judging simulation result data of the temperature field distribution in the switch cabinet with experimental data of the temperature field distribution in the corresponding switch cabinet;
if it is determined that the simulation result data of the distribution of the internal temperature field of the switch cabinet is lower than the preset experimental data threshold, the next step S105 is entered, otherwise, the simulation parameters of the internal environment in the simulation model are adjusted to enter S102.
In the specific implementation process, when the simulation result data of the temperature field distribution inside the switch cabinet is not lower than a preset experimental data threshold, adjusting the simulation parameters of the internal environment in the simulation model includes: the internal pressure, humidity and initial temperature of the switch cabinet are adjusted according to the proportion of +/-5% each time. The preset experimental data threshold set in this embodiment is less than 20% different from the experimental data. In practical application, preset experimental data threshold values, adjustment ratios and the like are set according to practical requirements.
S105, triggering the equivalent heat source parameter module to match a switch cabinet main component temperature field distribution simulation value, triggering the switch cabinet shell temperature field distribution influence parameter module to match a switch cabinet shell temperature field distribution simulation value;
when the distribution of the temperature field in the switch cabinet meets the corresponding conditions, corresponding simulation value matching is triggered, the corresponding simulation precision correction process of the distribution of the temperature field in the switch cabinet is realized, and the switch cabinet is provided with corresponding heat fault simulation experiment data of the switch office as a support for analysis to achieve corresponding analysis results.
S106, carrying out gradient sorting on the result difference based on simulation result data of the temperature field distribution in the switch cabinet, simulation values of the temperature field distribution of the main components of the switch cabinet and simulation values of the temperature field distribution of the shell of the switch cabinet, and calculating a proportionality coefficient of the result difference between the simulation result data and the experimental result of the temperature field distribution in the switch cabinet;
The proportionality coefficient of the simulation result data and the experimental result difference of the temperature field distribution in the calculation switch cabinet is as follows:
In this embodiment, a% is the percentage of the difference between the temperature field distribution of the main part of the switch cabinet and the experimental result, B% is the percentage of the difference between the temperature field distribution of the inside of the switch cabinet and the experimental result, C% is the percentage of the difference between the temperature field distribution of the outer shell of the switch cabinet and the experimental result, a is the proportionality coefficient of the temperature field distribution of the main part of the switch cabinet, B is the proportionality coefficient of the temperature field distribution of the inside of the switch cabinet, and C is the proportionality coefficient of the temperature field distribution of the outer shell of the switch cabinet.
S107, judging the maximum difference value based on simulation result data of the temperature field distribution in the switch cabinet;
If the difference maximum value is met, the next step S108 is carried out, otherwise, simulation parameters of the internal environment are set based on the proportion coefficient of the difference between the simulation result data and the experimental result of the temperature field distribution in the switch cabinet, and the step S102 is carried out; the setting of the simulation parameters of the internal environment based on the proportionality coefficient of the simulation result data and the experimental result difference of the internal temperature field distribution of the switch cabinet comprises the following steps: the simulation parameters of the internal environment were adjusted by + -3% each time following the scaling factor. In this embodiment, the maximum value of the difference between the simulation result and the experimental data is set to be lower than 10%.
S108, when the maximum difference value is met, carrying out average value calculation of experimental data difference based on simulation result data of temperature field distribution inside the switch cabinet, simulation value of temperature field distribution of a main part of the switch cabinet and simulation value of temperature field distribution of a shell of the switch cabinet;
It should be noted that, in the mean value calculation of the temperature field distribution at different positions and the experimental data difference, the mean value calculation formula is as follows:
S109, judging whether the average value of the experimental data difference is lower than an average value threshold value or not;
if the value is lower than the average value threshold, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet, and if the value is not met, triggering and adjusting simulation parameters of the internal environment of the simulation model;
the average value threshold is that the maximum value of the difference between the simulation result and the experimental data is lower than 5%, and in practical application, the average value threshold is set according to practical requirements.
S110, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet;
The triggering and adjusting the simulation parameters of the internal environment of the simulation model comprises the following steps: and adjusting simulation parameters of the internal environment by adopting a genetic algorithm with the minimum difference mean value as an objective function.
The simulation parameter corresponding relation and the weighting coefficient of the typical thermal fault simulation of the switch cabinet are determined, and the simulation parameter corresponding relation and the weighting coefficient are summarized to summarize the equivalent heat source, the internal environment parameter, the cabinet heat exchange coefficient, the external environment parameter and the weighting coefficient of the typical thermal fault of the switch cabinet.
S111, simulating other thermal faults of the switch cabinet based on the simulation parameter corresponding relation of the typical thermal fault simulation of the switch cabinet and the corresponding relation between the weighting system and the typical thermal fault of the switch cabinet.
And simulating other types of thermal faults of the switch cabinet, and setting equivalent heat sources, internal environment parameters, cabinet heat exchange coefficients and external environment parameters according to the summarized corresponding relation between the typical thermal faults of the switch cabinet and the corresponding relation between the equivalent heat sources, the internal environment parameters, the cabinet heat exchange coefficients and the external environment parameters of the switch cabinet.
Referring to fig. 2, in steps S104, S107, and S109, the experimental data sources and the experiment platform are set up to simulate the typical thermal faults of the switch cabinet, and the switch cabinet used by the experiment platform is identical to the simulation model switch cabinet in model number. The typical thermal fault experimental simulation process of the switch cabinet comprises the following steps: setting up a K1 switch cabinet thermal fault simulation experiment platform; simulating a typical thermal fault experiment of a K2 switch cabinet; and (3) recording and analyzing typical thermal fault experimental data of the K3 switch cabinet.
Further, the experimental data record and analysis of typical thermal faults of the K3 switch cabinet comprise: temperature field distribution of main parts of the K3-1 switch cabinet with thermal faults; the distribution of the temperature field inside the thermal fault of the K3-2 switch cabinet; and the temperature field distribution of the thermal fault shell of the K3-3 switch cabinet.
Further, in steps S104, S107 and S109, experimental data comprise the type of the switch cabinet, the internal environment parameters of the switch cabinet, the external environment parameters of the switch cabinet, typical fault types and the temperature field distribution of main parts of the thermal fault of the K3-1 switch cabinet for constructing an experimental platform; the distribution of the temperature field inside the thermal fault of the K3-2 switch cabinet; temperature field distribution of a thermal fault shell of the K3-3 switch cabinet and the like.
According to the embodiment, based on the typical thermal fault simulation experiment data of the switch cabinet, the simulation parameter setting of the internal environment in the thermal fault simulation model of the switch cabinet is corrected, the cost and the period of the thermal fault simulation analysis of the switch cabinet are reduced, and the analysis precision and the result accuracy are improved.
While the foregoing has been described in some detail by way of illustration of the principles and embodiments of the invention, specific examples have been set forth herein to provide a thorough understanding of the method and core concepts of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (6)
1. A method of correcting thermal fault simulation based on internal environmental parameters, the method comprising:
Establishing a switch cabinet simulation model, wherein an equivalent heat source parameter module and a switch cabinet shell temperature field distribution influence parameter module are matched in the switch cabinet simulation model, the equivalent heat source parameter module stores a plurality of switch cabinet main component temperature field distribution simulation values meeting a preset experimental data threshold, and the switch cabinet shell temperature field distribution influence parameter module stores a plurality of switch cabinet shell temperature field distribution simulation values meeting the preset experimental data threshold;
setting simulation parameters of an internal environment based on a simulation model;
Acquiring simulation result data of the distribution of the internal temperature field of the switch cabinet based on the simulation parameters of the internal environment;
Comparing and judging simulation result data of the temperature field distribution in the switch cabinet with experimental data of the temperature field distribution in the corresponding switch cabinet, if the simulation result data of the temperature field distribution in the switch cabinet is lower than a preset experimental data threshold value, entering the next step, otherwise, adjusting simulation parameters of an internal environment in a simulation model;
Triggering the equivalent heat source parameter module to match a switch cabinet main component temperature field distribution simulation value, triggering the switch cabinet shell temperature field distribution influence parameter module to match a switch cabinet shell temperature field distribution simulation value;
Gradient sorting of result differences is carried out based on simulation result data of temperature field distribution in the switch cabinet, simulation value of temperature field distribution of main components of the switch cabinet and simulation value of temperature field distribution of a shell of the switch cabinet, and a proportionality coefficient of the simulation result data of the temperature field distribution in the switch cabinet and the experiment result differences is calculated;
Judging the maximum difference value based on simulation result data of the temperature field distribution in the switch cabinet, if the maximum difference value is met, entering the next step, otherwise, setting simulation parameters of the internal environment based on the proportion coefficient of the difference between the simulation result data of the temperature field distribution in the switch cabinet and the experimental result;
When the maximum difference value is met, carrying out average value calculation of experimental data difference based on simulation result data of temperature field distribution inside the switch cabinet, simulation value of temperature field distribution of a main part of the switch cabinet and simulation value of temperature field distribution of a shell of the switch cabinet;
judging whether the average value of the experimental data difference is lower than an average value threshold value, if so, determining a simulation parameter corresponding relation and a weighting system of the typical thermal fault simulation of the switch cabinet, and if not, triggering and adjusting simulation parameters of the internal environment of the simulation model;
Simulation parameter corresponding relation based on the simulation of the typical thermal faults of the switch cabinet and corresponding relation between the weighting system and the typical thermal faults of the switch cabinet simulate other thermal faults of the switch cabinet.
2. The method for correcting thermal fault simulation based on internal environment parameters according to claim 1, wherein in the method for establishing a switchgear simulation model, five parts of a bus room, a breaker room, a cable room, an instrument room and a trolley room are established in equal proportion according to the actual switchgear structure, tiny parts are omitted, only main parts of copper bars and insulating parts are reserved, and the parts are distributed in the bus room, the breaker room and the cable room.
3. The method for correcting thermal fault simulation based on internal environment parameters according to claim 2, wherein when it is determined that simulation result data of the internal temperature field distribution of the switchgear is not lower than a preset experimental data threshold, the adjusting simulation parameters of the internal environment in the simulation model includes: the internal pressure, humidity and initial temperature of the switch cabinet are adjusted according to the proportion of +/-5% each time.
4. The method for correcting thermal fault simulation based on internal environment parameters as claimed in claim 3, wherein the proportionality coefficient of the difference between the simulation result data and the experimental result of the internal temperature field distribution of the computing switch cabinet is:
Wherein: a% is the percentage of the difference between the temperature field distribution of the main part of the switch cabinet and the experimental result, B% is the percentage of the difference between the temperature field distribution of the inside of the switch cabinet and the experimental result, C% is the percentage of the difference between the temperature field distribution of the shell of the switch cabinet and the experimental result, A is the proportionality coefficient of the temperature field distribution of the main part of the switch cabinet, B is the proportionality coefficient of the temperature field distribution of the inside of the switch cabinet, and C is the proportionality coefficient of the temperature field distribution of the shell of the switch cabinet.
5. The method for correcting thermal fault simulation based on internal environment parameters as claimed in claim 4, wherein the setting of the simulation parameters of the internal environment based on the proportionality coefficient of the difference between the simulation result data and the experimental result of the internal temperature field distribution of the switchgear comprises:
the simulation parameters of the internal environment were adjusted by + -3% each time following the scaling factor.
6. The method for correcting thermal fault simulation based on internal environment parameters as claimed in claim 5, wherein triggering adjustment of simulation parameters of the simulation model internal environment comprises:
and adjusting simulation parameters of the internal environment by adopting a genetic algorithm with the minimum difference mean value as an objective function.
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