CN112415825B - Preparation method of laser induction array substrate and display device - Google Patents
Preparation method of laser induction array substrate and display device Download PDFInfo
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- CN112415825B CN112415825B CN202011254000.6A CN202011254000A CN112415825B CN 112415825 B CN112415825 B CN 112415825B CN 202011254000 A CN202011254000 A CN 202011254000A CN 112415825 B CN112415825 B CN 112415825B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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Abstract
The embodiment of the application provides a preparation method of a laser induction array substrate and a display device, comprising the following steps: sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of a substrate by deposition, etching and developing processes to obtain a first array substrate with a first surface, wherein the first array substrate comprises an induction thin film transistor, a time sequence thin film transistor and a storage capacitor; depositing a shading deposition layer on the first surface of the first array substrate; exposing and developing the shading deposition layer by using a mask plate to obtain a laser induction array substrate with a spacer and a shading layer; the application provides a display device; the embodiment of the application provides a laser-induced array substrate can prevent that glass apron and foreign matter from pressing the thin film transistor and the circuit of laser-induced array substrate, can also reduce the laser-induced array substrate and use glue thickness when glass substrate glues, realizes that the laser display is frivolous.
Description
Technical Field
The embodiment of the application relates to the field of display panels, in particular to a preparation method of a laser induction array substrate and a display device.
Background
The thin film transistor liquid crystal display (TFT-LCD) has the characteristics of light weight, thinness, small size and the like, and has low power consumption, no radiation and relatively low manufacturing cost, thereby being widely applied to the current flat panel display industry. In order to widen the commercial and household functions of the liquid crystal display, a plurality of functions such as color temperature sensing, laser sensing, gas sensing and the like are integrated in the display, so that the applicable scene of the liquid crystal display is improved. However, many integrated functions are in a new development stage, and many process steps and related designs are required to be perfected so as to improve the performance of the liquid crystal display with various integrated functions; in order to realize that the liquid crystal display can respond to external laser, the laser signal that will sense is transmitted to the display simultaneously, instruct the corresponding position of liquid crystal display to take place the color variation, reach the function that the liquid crystal display produced corresponding signal in laser scanning position, a structure at present is the laser response array substrate of the outside cladding concrete laser response function of liquid crystal display, through glue, adhere laser response array substrate and display, the thin film transistor that has photosensitive function of the wholeness that distributes on this laser response array substrate, when laser irradiation, the response thin film transistor by laser irradiation position can produce certain current signal for display fixed position produces color variation, realize laser pen irradiation position, the function that the liquid crystal display color changed.
In the research and practice process of the prior art, the inventor of the embodiment of the application finds that the laser sensing array substrate is provided with a sensing thin film transistor capable of converting a laser signal into an electric signal, a switching thin film transistor and a storage capacitor for controlling the electric signal generated by the thin film transistor to periodically transmit, and a black photoresist for preventing the time sequence thin film transistor from generating leakage current under light irradiation and not capable of periodically transmitting the electric signal generated by the sensing thin film transistor, so that the sensing thin film transistor is provided with the black photoresist for shielding light; after the manufacturing process is finished, glue is covered on the laser-induced array substrate so as to be attached to the glass cover plate, and the laser-induced array substrate is prevented from being scratched. In order to ensure that the thin film transistor on the laser-induced array substrate is not scratched, and prevent the thin film transistor from being damaged by the cover plate when the glue is uneven, the thickness of the glue is generally required to be thicker, and the thickness is generally 20-50 μm, which results in thicker thickness of the whole laser display and seriously affects the light and thin effect of the product.
Disclosure of Invention
The embodiment of the application provides a preparation method of a laser induction array substrate and a display device, and the preparation method of the laser induction array substrate and the display device can reduce the thickness of glue and realize the light and thin of a laser display.
In a first aspect, an embodiment of the present application provides a display device, including: the display panel and the laser sensing array substrate, the first surface of the display panel is provided with the laser sensing array substrate in sequence, the display panel and the laser sensing array substrate are provided with a second glue layer, wherein the laser sensing array substrate comprises a substrate with a first surface and a sensing thin film transistor, a time sequence thin film transistor, a storage capacitor, a first spacer, a second spacer, a third spacer and a shading layer which are formed on the first surface of the substrate, the first surface of the laser sensing array substrate is covered with a glass cover plate, and a first glue layer is arranged between the laser sensing array substrate and the glass cover plate for lamination.
In some embodiments, the first spacer is disposed on a side of the pixel electrode or a side of the passivation layer corresponding to the sensing thin film transistor.
In some embodiments, the second spacer is disposed on one side of the light shielding layer.
In some embodiments, the third spacer is disposed at a side of the pixel electrode corresponding to the storage capacitor.
In some embodiments, the display panel includes an array substrate, a liquid crystal layer, and a color film substrate, where the liquid crystal layer and the color film substrate are sequentially disposed on a first surface of the array substrate.
In a first aspect, an embodiment of the present application provides a method for preparing a laser sensing array substrate, including:
providing a substrate base plate;
sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of the substrate through deposition, etching and developing processes to obtain a first array substrate with a first surface, wherein the first array substrate comprises an induction thin film transistor area, a time sequence thin film transistor area and a storage capacitor area, the induction thin film transistor area is provided with an induction thin film transistor, the time sequence thin film transistor area is provided with a time sequence thin film transistor, and the storage capacitor area is provided with a storage capacitor;
depositing a shading deposition layer on the first surface of the first array substrate;
and exposing and developing the shading deposition layer to form the laser sensing array substrate with the spacer and the shading layer.
In some embodiments, exposing and developing the light-shielding deposited layer includes:
exposing and developing the shading deposition layer by using a mask plate;
the mask plate comprises a shading area and a light transmission area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is arranged corresponding to the pixel electrode layer of the sensing thin film transistor area, the second light transmission area is arranged corresponding to the pixel electrode layer of the time sequence thin film transistor area, and the third light transmission area is arranged corresponding to the pixel electrode layer of the storage capacitor area.
In some embodiments, exposing and developing the light-shielding deposited layer includes:
exposing and developing the shading deposition layer by using a mask plate;
the mask plate comprises a shading area and a light transmission area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is correspondingly arranged with the passivation layer of the induction thin film transistor area, the second light transmission area is correspondingly arranged with the passivation layer of the time sequence thin film transistor area, and the third light transmission area is correspondingly arranged with the pixel electrode layer of the storage capacitor area.
In some embodiments, the reticle is a halftone reticle.
In some embodiments, the transmittance of the first light shielding region and the third light shielding region is 0, the transmittance of the second light shielding region is between 0 and 100%, and the transmittance of the light transmitting region is 100%.
In some embodiments, exposing and developing the light-shielding deposition layer to form a laser-induced array substrate having spacers and a light-shielding layer, comprising:
and exposing and developing the shading deposition layer by adopting the mask plate, forming a first spacer at the position of the shading deposition layer corresponding to the first light transmission area, forming a second spacer at the position of the shading deposition layer corresponding to the second light transmission area, forming a third spacer at the position of the shading deposition layer corresponding to the third light transmission area, and forming a shading layer at the position of the shading deposition layer corresponding to the second light transmission area.
In some embodiments, the light shielding deposition layer height ranges from 3 μm to 10 μm.
In some embodiments, after forming the laser-induced array substrate with the spacers and the light shielding layer, the method includes:
and a glass cover plate is covered on the first surface of the laser induction array substrate, and a first glue layer is arranged between the laser induction array substrate and the glass cover plate for bonding.
In some embodiments, the first glue layer height ranges from 3 μm to 10 μm.
The embodiment of the application provides a laser-induced array substrate preparation method and a display device, through the laser-induced array substrate preparation method provided by the embodiment of the application, columnar spacer with a certain height can be prepared on the laser-induced array substrate, the prepared columnar spacer can control the distance between the laser-induced array substrate and a glass cover plate, the thin film transistor and a metal circuit of the laser-induced array substrate can be prevented from being crushed by the glass cover plate and foreign matters, and the thickness of glue used when the laser-induced array substrate and the glass substrate are bonded can be reduced while the thin film transistor and the metal circuit of the laser-induced array substrate are prevented from being crushed by the glass cover plate and the foreign matters, so that the laser display is light and thin.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a laser-induced array substrate according to an embodiment of the present application.
FIG. 2 is a schematic diagram of a first array substrate according to an embodiment of the present disclosure.
Fig. 3 is a schematic structural diagram of a laser sensing array substrate according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a laser sensing array substrate according to an embodiment of the present application.
Fig. 5 is a schematic structural diagram of a laser sensing array substrate according to an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a laser sensing array substrate and a glass cover plate when the laser sensing array substrate is attached.
Fig. 7 is a schematic structural diagram of a display device according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or an implicit indication of the number of technical features being indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "" "is two or more, unless explicitly defined otherwise.
The following disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the application of other processes and/or the use of other materials. In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The embodiment of the invention provides a laser induction array substrate and a display device provided with the same, which can be matched with a terminal for use, such as a smart phone, a tablet personal computer, a notebook computer or a personal computer. The method for manufacturing the laser-induced array substrate and the display device are described in detail below. The following description of the embodiments is not intended to limit the preferred embodiments.
The present invention will be described in detail with reference to the drawings and detailed description, and with reference to fig. 1 to 7.
Referring to fig. 1, an embodiment of the present application provides a method for preparing a laser-induced array substrate, where the method includes:
A. providing a substrate base plate;
B. sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of the substrate by deposition, etching and developing processes to obtain a first array substrate with a first surface, wherein the first array substrate comprises an induction thin film transistor area, a time sequence thin film transistor area and a storage capacitor area;
referring to fig. 2, specifically, in this embodiment, a gate electrode 122, a gate insulating layer 123, an active layer 124, an ohmic contact layer 125, a source electrode 1261, a drain electrode 1262, a passivation layer 127 and a pixel electrode 128 are sequentially formed on a surface of the substrate 121, where the pixel electrode is a pixel electrode made of a transparent metal oxide, so as to obtain a first array substrate with a first surface, and the first array substrate includes an inductive thin film transistor region a, a time-sequence thin film transistor region b and a storage capacitor region c.
Specifically, in the embodiment of the present application, the sensing thin film transistor region a is provided with a sensing thin film transistor, the timing thin film transistor region b is provided with a timing thin film transistor, and the storage capacitor region c is provided with a storage capacitor.
C. Depositing a shading deposition layer on the first surface of the first array substrate;
referring to fig. 2, specifically, in the embodiment of the present application, a light shielding deposition layer 129 is deposited or coated on the first surface of the first array substrate where the sensing thin film transistor region a, the timing thin film transistor region b and the storage capacitor region c are formed, and the material of the light shielding deposition layer 129 may be black photoresist, which should be understood that the type, the process condition, the thickness, etc. of the black photoresist are not limited in the embodiment of the present application.
Specifically, in the embodiment of the present application, the height of the light-shielding deposited layer 129 ranges from 3 μm to 10 μm.
D. And exposing and developing the shading deposition layer to form the laser sensing array substrate with the spacer and the shading layer.
Specifically, in this embodiment of the present application, the mask includes a light shielding region and a light transmitting region, where the light shielding region includes a first light shielding region, a second light shielding region, and a third light shielding region, the first light shielding region is disposed corresponding to the sensing thin film transistor region, the second light shielding region is disposed corresponding to the time-sequence thin film transistor region, and the third light shielding region is disposed corresponding to the storage capacitor region; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is correspondingly arranged with the induction thin film transistor area, the second light transmission area is correspondingly arranged with the time sequence thin film transistor area, and the third light transmission area is correspondingly arranged with the storage capacitor area.
Specifically, the arrangement of the spacer according to the embodiment of the invention has two possible implementation modes as follows:
optionally, in a first possible implementation manner, the mask includes a light shielding region and a light transmitting region, where the light shielding region includes a first light shielding region, a second light shielding region and a third light shielding region, the first light shielding region is disposed corresponding to the sensing thin film transistor, the second light shielding region is disposed corresponding to the time sequence thin film transistor, and the third light shielding region is disposed corresponding to the storage capacitor; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is correspondingly arranged with the pixel electrode layer of the induction thin film transistor, the second light transmission area is correspondingly arranged with the pixel electrode layer of the time sequence thin film transistor, and the third light transmission area is correspondingly arranged with the pixel electrode layer of the storage capacitor.
Optionally, in a second possible implementation manner, the mask includes a light shielding region and a light transmitting region, where the light shielding region includes a first light shielding region, a second light shielding region and a third light shielding region, the first light shielding region is disposed corresponding to the sensing thin film transistor, the second light shielding region is disposed corresponding to the time sequence thin film transistor, and the third light shielding region is disposed corresponding to the storage capacitor; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is correspondingly arranged with the passivation layer of the induction thin film transistor, the second light transmission area is correspondingly arranged with the passivation layer of the time sequence thin film transistor, and the third light transmission area is correspondingly arranged with the pixel electrode layer of the storage capacitor.
Specifically, the mask plate in the embodiment of the invention is a halftone mask plate, the transmittance of the first light shielding region and the third light shielding region is 0, the transmittance of the second light shielding region is between 0 and 100%, and the transmittance of the light transmitting region is 100%.
Referring to fig. 3, fig. 4, and fig. 5, specifically, in the embodiment of the present application, the first light shielding region 211 of the mask 2 is disposed corresponding to the sensing tft region a, the second light shielding region 212 is disposed corresponding to the timing tft region b, and the third light shielding region 213 is disposed corresponding to the storage capacitor region c; the first light-transmitting region 221 is disposed corresponding to the passivation layer 127 of the sensing thin film transistor region a, the second light-transmitting region 222 is disposed corresponding to the passivation layer 127 of the timing thin film transistor region b, and the third light-transmitting region 223 is disposed corresponding to the pixel electrode layer 128 of the storage capacitor region c; the mask 2 is used to expose the light-shielding deposition layer 129, the transmittance of the first light-shielding region 211 and the third light-shielding region 213 is 0, the transmittance of the second light-shielding region 212 is 0 to 100%, the transmittance of the light-transmitting region 22 is 100%, the exposed light-shielding deposition layer 129 is subjected to a yellow light process such as development and baking, a first spacer 1291 is formed in the first light-transmitting region 221, a second spacer 1292 is formed in the second light-transmitting region 222, a third spacer 1293 is formed in the third light-transmitting region 223, and a light-shielding layer 1294 is formed in the second light-shielding region 212.
It should be understood that, in the embodiments of the present application, the specific positions of the spacers on the passivation layer and the pixel electrode layer are not limited, and the spacers may be located at any position above the interval between the passivation layer and the pixel electrode layer; the width of the light shielding layer in the embodiment of the present application only needs to cover the active layer corresponding to the timing thin film transistor, and the width range of the light shielding layer and the like in the embodiment of the present application are not limited.
Referring to fig. 6, specifically, in the embodiment of the present application, after exposing and developing the light-shielding deposition layer 129 with the mask 2 to obtain the laser-induced array substrate 12 with the spacer and the light-shielding layer 1294, a glass cover plate 11 is covered on a first surface of the laser-induced array substrate 12, and a first glue layer 14 is disposed between the laser-induced array substrate 12 and the glass cover plate 11 for bonding.
Specifically, in the embodiment of the present application, the height of the first glue layer 14 ranges from 3 μm to 10 μm.
In summary, the embodiment of the application provides a method for preparing a laser-induced array substrate, by which a columnar spacer with a certain height can be prepared on the laser-induced array substrate, the prepared columnar spacer can control the distance between the laser-induced array substrate and a glass cover plate, and can prevent the glass cover plate and foreign matters from damaging a thin film transistor and a metal circuit of the laser-induced array substrate, and can reduce the thickness of glue used when the glass cover plate and the foreign matters damage the thin film transistor and the metal circuit of the laser-induced array substrate, thereby realizing the light and thin performance of a laser display device.
The method for preparing the laser-induced array substrate in the embodiment of the present application is described above, referring to fig. 7, the embodiment of the present application further provides a display device 1, where the display device 1 includes a display panel 13, a laser-induced array substrate 12 and a glass cover plate 11, the first surface of the display panel 13 is sequentially provided with the laser-induced array substrate 12 and the glass cover plate 11, the display panel 13 further includes a backlight module, the display panel 13 and the laser-induced array substrate 12 are provided with a second glue layer 15, a first glue layer 14 is disposed between the laser-induced array substrate 12 and the display panel 13, the laser-induced array substrate 12 includes a substrate 121 having a first surface, and a sensing thin film transistor a, a time-sequence thin film transistor b, a storage capacitor c, a first spacer 1291, a second spacer 2, a third spacer 1293 and a light shielding layer 4 formed on the first surface of the substrate 121, the display panel 13 includes a color array substrate 132 and a liquid crystal array substrate 132 having a color array layer 133 m between the first glue layer 133 μm and the first glue layer 133 m, and the first glue layer 133 m is sequentially disposed between the first glue layer 132 μm and the first glue layer 133 m.
Specifically, in this embodiment of the present application, the array substrate includes a substrate layer, a buffer layer disposed on the substrate layer, an active layer disposed on the buffer layer, a gate insulating layer disposed on the active layer, a gate layer disposed on the gate insulating layer, an interlayer dielectric layer disposed on the gate layer, a source drain layer disposed on the interlayer dielectric layer, a flat layer disposed on the source drain layer, a pixel electrode layer disposed on the flat layer, and a pixel definition layer disposed on the pixel electrode layer, which is an improvement of the embodiment of the present application is that the laser-induced array substrate 12, so that the array substrate and the color film substrate will not be repeated.
In summary, the embodiment of the application provides a display device, this display device includes the laser-induced array substrate that adopts this embodiment to prepare, the laser-induced array substrate preparation has the column spacer of certain height, the distance between laser-induced array substrate and the glass apron can be controlled to the column spacer, can prevent that glass apron and foreign matter from pressing the thin film transistor and the metal circuit of damaging the laser-induced array substrate, when preventing glass apron and foreign matter from pressing the thin film transistor and the metal circuit of damaging the laser-induced array substrate, this embodiment of the application can also reduce the thickness of glue that uses when laser-induced array substrate and glass substrate bond, realizes laser display device's frivolousness.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments. The embodiments described above are only some, but not all, of the embodiments of the present application. Based on the embodiments herein, all other embodiments that may be made by those skilled in the art without the exercise of inventive faculty, except for those designs mentioned in the embodiments herein that are consistent with the schemes of the embodiments herein, are within the scope of the protection herein.
The above description is provided in detail for a method for manufacturing a laser-induced array substrate and a display device provided by the embodiments of the present application, and specific examples are applied to describe the principles and embodiments of the present application, where the description of the above embodiments is only for helping to understand the technical solution and core ideas of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (12)
1. A display device, comprising: the display panel comprises a display panel and a laser induction array substrate, wherein the first surface of the display panel is sequentially provided with the laser induction array substrate and a glass cover plate, a second glue layer is arranged between the display panel and the laser induction array substrate, the laser induction array substrate comprises a substrate with a first surface, an induction thin film transistor, a time sequence thin film transistor, a storage capacitor, a first isolation object, a second isolation object, a third isolation object and a shading layer, the induction thin film transistor, the time sequence thin film transistor, the storage capacitor, the first isolation object, the second isolation object, the third isolation object and the shading layer are formed on the first surface of the substrate, the first surface of the laser induction array substrate covers the glass cover plate, a first glue layer is arranged between the laser induction array substrate and the glass cover plate for bonding, and the height range of the first glue layer is 3-10 mu m;
the display panel comprises an array substrate, a liquid crystal layer, a color film substrate and a backlight module, wherein the liquid crystal layer and the color film substrate are sequentially arranged on the first surface of the array substrate.
2. The display device according to claim 1, wherein the first spacer is disposed on a side of the pixel electrode or a side of the passivation layer corresponding to the sensing thin film transistor.
3. The display device according to claim 1, wherein the second spacer is provided on a side of the light shielding layer.
4. The display device according to claim 1, wherein the third spacer is disposed on a side of the pixel electrode corresponding to the storage capacitor.
5. The preparation method of the laser induction array substrate is characterized by comprising the following steps of:
providing a substrate base plate;
sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of the substrate through deposition, etching and developing processes to obtain a first array substrate with a first surface, wherein the first array substrate comprises an induction thin film transistor area, a time sequence thin film transistor area and a storage capacitor area, the induction thin film transistor area is provided with an induction thin film transistor, the time sequence thin film transistor area is provided with a time sequence thin film transistor, and the storage capacitor area is provided with a storage capacitor;
depositing a shading deposition layer on the first surface of the first array substrate;
and exposing and developing the shading deposition layer to form the laser sensing array substrate with the spacer and the shading layer.
6. The method for manufacturing a laser-induced array substrate according to claim 5, wherein exposing and developing the light-shielding deposited layer comprises:
exposing and developing the shading deposition layer by using a mask plate;
the mask plate comprises a shading area and a light transmission area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is arranged corresponding to the pixel electrode layer of the sensing thin film transistor area, the second light transmission area is arranged corresponding to the pixel electrode layer of the time sequence thin film transistor area, and the third light transmission area is arranged corresponding to the pixel electrode layer of the storage capacitor area.
7. The method for manufacturing a laser-induced array substrate according to claim 5, wherein exposing and developing the light-shielding deposited layer comprises:
exposing and developing the shading deposition layer by using a mask plate;
the mask plate comprises a shading area and a light transmission area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is correspondingly arranged with the passivation layer of the induction thin film transistor area, the second light transmission area is correspondingly arranged with the passivation layer of the time sequence thin film transistor area, and the third light transmission area is correspondingly arranged with the pixel electrode layer of the storage capacitor area.
8. The method for manufacturing a laser-induced array substrate according to any one of claims 6 or 7, wherein the mask is a halftone mask.
9. The method of claim 5, wherein exposing and developing the light shielding deposited layer to form the laser-induced array substrate with the spacers and the light shielding layer, comprises:
and exposing and developing the shading deposition layer by using a mask plate, forming a first spacer at the position of the shading deposition layer corresponding to the first light transmission area, forming a second spacer at the position of the shading deposition layer corresponding to the second light transmission area, forming a third spacer at the position of the shading deposition layer corresponding to the third light transmission area, and forming a shading layer at the position of the shading deposition layer corresponding to the second light transmission area.
10. The method of claim 5, wherein the height of the light shielding deposited layer is in a range of 3 μm to 10 μm.
11. The method of claim 5, wherein forming the laser-induced array substrate with the spacers and the light shielding layer comprises:
and a glass cover plate is covered on the first surface of the laser induction array substrate, and a first glue layer is arranged between the laser induction array substrate and the glass cover plate for bonding.
12. The method of claim 11, wherein the first glue layer has a height ranging from 3 μm to 10 μm.
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| CN109188764A (en) * | 2018-10-23 | 2019-01-11 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and preparation method thereof |
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| KR100643038B1 (en) * | 2000-08-31 | 2006-11-10 | 엘지.필립스 엘시디 주식회사 | optical sensor array panel |
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| CN1761933A (en) * | 2003-04-08 | 2006-04-19 | 三星电子株式会社 | Display device with display panel |
| CN107123654A (en) * | 2017-05-26 | 2017-09-01 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof and display device |
| CN107272232A (en) * | 2017-07-20 | 2017-10-20 | 深圳市华星光电半导体显示技术有限公司 | A kind of manufacture method of liquid crystal display panel |
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