CN112415825A - Laser induction array substrate preparation method and display device - Google Patents

Laser induction array substrate preparation method and display device Download PDF

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Publication number
CN112415825A
CN112415825A CN202011254000.6A CN202011254000A CN112415825A CN 112415825 A CN112415825 A CN 112415825A CN 202011254000 A CN202011254000 A CN 202011254000A CN 112415825 A CN112415825 A CN 112415825A
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area
array substrate
shading
layer
thin film
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CN112415825B (en
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王海军
江淼
张鑫
姚江波
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The embodiment of the application provides a laser induction array substrate preparation method and a display device, and the method comprises the following steps: sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of a substrate base plate through deposition, etching and developing processes to obtain a first array base plate with a first surface, wherein the first array base plate comprises an induction thin film transistor, a time sequence thin film transistor and a storage capacitor; depositing a shading deposition layer on the first surface of the first array substrate; exposing and developing the shading sedimentary deposit by adopting a mask plate to obtain a laser induction array substrate with a spacer and a shading layer; the present application provides a display device; the laser induction array substrate provided by the embodiment of the application can prevent the thin film transistor and the circuit of the laser induction array substrate from being crushed by the glass cover plate and foreign matters, can reduce the thickness of glue used when the laser induction array substrate and the glass substrate are bonded, and realizes the lightness and thinness of a laser display.

Description

Laser induction array substrate preparation method and display device
Technical Field
The embodiment of the application relates to the field of display panels, in particular to a laser induction array substrate preparation method and a display device.
Background
The thin film transistor liquid crystal display (TFT-LCD) has the characteristics of light weight, thinness, small size and the like, and has low power consumption, no radiation and relatively low manufacturing cost, so the TFT-LCD is widely applied to the current flat panel display industry. In order to broaden the commercial and household functions of the liquid crystal display, various functions such as color temperature sensing, laser sensing, gas sensing and the like are integrated in the display, and the applicable scenes of the liquid crystal display are improved. However, many integrated functions are in the new development stage, and more process procedures and related designs need to be perfected so as to improve the performance of the liquid crystal display with various integrated functions; in order to realize that the liquid crystal display can sense external laser and transmit the sensed laser signal to the display to indicate that the corresponding position of the liquid crystal display generates color change so as to achieve the function that the liquid crystal display generates a corresponding signal at a laser scanning position, the prior structure is that a laser sensing array substrate with a specific laser sensing function is externally hung outside the liquid crystal display, the laser sensing array substrate is bonded with the display through glue, and the laser sensing array substrate is distributed with a whole surface of thin film transistors with a photosensitive function.
In the research and practice process of the prior art, the inventor of the embodiment of the application finds that the laser sensing array substrate is provided with a sensing thin film transistor which can convert a laser signal into an electric signal, a switching thin film transistor which controls the electric signal generated by the thin film transistor to be periodically transmitted, a storage capacitor and black photoresist, wherein the black photoresist is used for preventing the time sequence thin film transistor from generating leakage current under the light irradiation and cannot keep the electric signal generated by the periodically transmitted sensing thin film transistor, so the sensing thin film transistor is provided with the black photoresist for shielding light; after the manufacturing process is finished, glue is covered on the laser sensing array substrate so as to be attached to the glass cover plate, and the laser sensing array substrate is prevented from being scratched. In order to ensure that the thin film transistor on the laser sensing array substrate is not scratched and to prevent the thin film transistor from being damaged by the cover plate when the glue is uneven, the glue is generally required to be thick, and the thickness is generally 20 μm to 50 μm, which results in the thickness of the whole laser display being thick and seriously affects the light and thin effect of the product.
Disclosure of Invention
The embodiment of the application provides a laser sensing array substrate preparation method and a display device, and the glue thickness can be reduced through the laser sensing array substrate preparation method and the display device, so that the laser display is light and thin.
In a first aspect, an embodiment of the present application provides a display device, including: display panel and laser-induced array substrate, display panel's first surface sets gradually laser-induced array substrate, display panel with laser-induced array substrate is provided with the second glue layer, wherein, laser-induced array substrate include one have the first surface substrate and be formed at the response thin film transistor, chronogenesis thin film transistor, storage capacitor, first spacer, second spacer, third spacer and the light shield layer of the first surface of substrate, laser-induced array substrate's first surface covers a glass apron, laser-induced array substrate with set up first glue layer between the glass apron and laminate.
In some embodiments, the first spacer is disposed on a side of the pixel electrode or a side of the passivation layer corresponding to the sensing thin film transistor.
In some embodiments, the second spacer is disposed on one side of the light-shielding layer.
In some embodiments, the third spacer is disposed on a side of the pixel electrode corresponding to the storage capacitor.
In some embodiments, the display panel includes an array substrate, a liquid crystal layer, and a color filter substrate, where the liquid crystal layer and the color filter substrate are sequentially disposed on a first surface of the array substrate.
In a first aspect, an embodiment of the present application provides a method for manufacturing a laser sensing array substrate, including:
providing a substrate base plate;
sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of the substrate base plate through deposition, etching and developing processes to obtain a first array base plate with a first surface, wherein the first array base plate comprises an induction thin film transistor area, a time sequence thin film transistor area and a storage capacitor area, the induction thin film transistor area is provided with an induction thin film transistor, the time sequence thin film transistor area is provided with a time sequence thin film transistor, and the storage capacitor area is provided with a storage capacitor;
depositing a shading deposition layer on the first surface of the first array substrate;
and exposing and developing the shading deposition layer to form the laser induction array substrate with the spacer and the shading layer.
In some embodiments, exposing and developing the light blocking deposition layer includes:
exposing and developing the shading deposition layer by using a mask;
the mask comprises a shading area and a light transmitting area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is arranged corresponding to the pixel electrode layer of the induction thin film transistor area, the second light transmission area is arranged corresponding to the pixel electrode layer of the time sequence thin film transistor area, and the third light transmission area is arranged corresponding to the pixel electrode layer of the storage capacitor area.
In some embodiments, exposing and developing the light blocking deposition layer includes:
exposing and developing the shading deposition layer by using a mask;
the mask comprises a shading area and a light transmitting area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is arranged corresponding to the passivation layer of the induction thin film transistor area, the second light transmission area is arranged corresponding to the passivation layer of the time sequence thin film transistor area, and the third light transmission area is arranged corresponding to the pixel electrode layer of the storage capacitor area.
In some embodiments, the reticle is a halftone reticle.
In some embodiments, the transmittance of the first light-shielding region and the third light-shielding region is 0, the transmittance of the second light-shielding region is between 0 and 100%, and the transmittance of the light-transmitting region is 100%.
In some embodiments, exposing and developing the light-shielding deposition layer to form the laser sensing array substrate having the spacer and the light-shielding layer includes:
and exposing and developing the shading sedimentary deposit by adopting the mask, forming a first spacer at the position of the shading sedimentary deposit corresponding to the first light transmission area, forming a second spacer at the position of the shading sedimentary deposit corresponding to the second light transmission area, forming a third spacer at the position of the shading sedimentary deposit corresponding to the third light transmission area, and forming a shading layer at the position of the shading sedimentary deposit corresponding to the second shading area.
In some embodiments, the light blocking deposition layer height ranges from 3 μm to 10 μm.
In some embodiments, after forming the laser sensing array substrate having the spacers and the light shielding layer, the method includes:
covering a glass cover plate on the first surface of the laser sensing array substrate, and arranging a first glue layer between the laser sensing array substrate and the glass cover plate for bonding.
In some embodiments, the first glue layer has a height ranging from 3 μm to 10 μm.
The embodiment of the application provides a laser induction array substrate preparation method and a display device, through the laser induction array substrate preparation method provided by the embodiment of the application, a columnar spacer with a certain height can be prepared on a laser induction array substrate, the prepared columnar spacer can control the distance between the laser induction array substrate and a glass cover plate, a thin film transistor and a metal circuit of the laser induction array substrate can be prevented from being crushed by the glass cover plate and foreign matters, and the thickness of glue used when the laser induction array substrate and the glass substrate are bonded can be reduced while the thin film transistor and the metal circuit of the laser induction array substrate are prevented from being crushed by the glass cover plate and the foreign matters, so that the laser display is light and thin.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing a laser sensing array substrate according to an embodiment of the present disclosure.
Fig. 2 is a schematic structural diagram of a first array substrate according to an embodiment of the present disclosure.
Fig. 3 is a schematic structural diagram of a laser sensing array substrate according to an embodiment of the present disclosure.
Fig. 4 is a schematic structural diagram of another laser sensing array substrate according to an embodiment of the present disclosure.
Fig. 5 is a schematic structural diagram of another laser sensing array substrate according to an embodiment of the present disclosure.
Fig. 6 is a schematic structural view of the laser sensing array substrate and the glass cover plate according to the embodiment of the present disclosure.
Fig. 7 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "means two or more unless specifically defined otherwise.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials. In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The embodiment of the invention provides a laser sensing array substrate and a display device with the same, wherein the display device can be matched with a terminal for use, such as a smart phone, a tablet computer, a notebook computer or a personal computer. The method for manufacturing the laser sensing array substrate and the display device will be described in detail below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
The present invention will be described in detail with reference to the drawings and the detailed description, referring to fig. 1 to 7.
Referring to fig. 1, an embodiment of the present application provides a method for manufacturing a laser sensing array substrate, including:
A. providing a substrate base plate;
B. sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of the substrate base plate through deposition, etching and developing processes to obtain a first array base plate with a first surface, wherein the first array base plate comprises an induction thin film transistor region, a time sequence thin film transistor region and a storage capacitor region;
referring to fig. 2, in the embodiment of the present application, a gate electrode 122, a gate insulating layer 123, an active layer 124, an ohmic contact layer 125, a source electrode 1261, a drain electrode 1262, a passivation layer 127 and a pixel electrode 128 are sequentially formed on a surface of the substrate 121, the pixel electrode is a pixel electrode made of a transparent metal oxide, and a first array substrate having a first surface is obtained, where the first array substrate includes an sensing thin film transistor region a, a timing thin film transistor region b and a storage capacitor region c.
Specifically, in the embodiment of the present application, the sensing thin film transistor region a is provided with a sensing thin film transistor, the timing thin film transistor region b is provided with a timing thin film transistor, and the storage capacitor region c is provided with a storage capacitor.
C. Depositing a shading deposition layer on the first surface of the first array substrate;
referring to fig. 2, in the embodiment of the present invention, a light-shielding deposition layer 129 is deposited or coated on a first surface of a first array substrate where a sensing tft area a, a timing tft area b and a storage capacitor area c are formed, and the light-shielding deposition layer 129 may be made of black photoresist, it should be understood that the embodiment of the present invention is not limited to the type, process conditions, thickness, and the like of the black photoresist.
Specifically, in the embodiment of the present application, the height of the light shielding deposition layer 129 ranges from 3 μm to 10 μm.
D. And exposing and developing the shading deposition layer to form the laser induction array substrate with the spacer and the shading layer.
Specifically, in the embodiment of the present application, the mask includes a light-shielding region and a light-transmitting region, the light-shielding region includes a first light-shielding region, a second light-shielding region and a third light-shielding region, the first light-shielding region is disposed corresponding to the sensing thin film transistor region, the second light-shielding region is disposed corresponding to the timing thin film transistor region, and the third light-shielding region is disposed corresponding to the storage capacitor region; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area corresponds to the induction thin film transistor area, the second light transmission area corresponds to the time sequence thin film transistor area, and the third light transmission area corresponds to the storage capacitor area.
Specifically, the arrangement of the spacer in the embodiment of the present invention specifically has the following two possible implementation manners:
optionally, in a first possible implementation manner, the mask includes a light-shielding area and a light-transmitting area, where the light-shielding area includes a first light-shielding area, a second light-shielding area and a third light-shielding area, the first light-shielding area is disposed corresponding to the sensing thin film transistor, the second light-shielding area is disposed corresponding to the timing thin film transistor, and the third light-shielding area is disposed corresponding to the storage capacitor; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area corresponds to the pixel electrode layer of the induction thin film transistor, the second light transmission area corresponds to the pixel electrode layer of the time sequence thin film transistor, and the third light transmission area corresponds to the pixel electrode layer of the storage capacitor.
Optionally, in a second possible implementation manner, the mask includes a light-shielding area and a light-transmitting area, where the light-shielding area includes a first light-shielding area, a second light-shielding area and a third light-shielding area, the first light-shielding area is disposed corresponding to the sensing thin film transistor, the second light-shielding area is disposed corresponding to the timing thin film transistor, and the third light-shielding area is disposed corresponding to the storage capacitor; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is arranged corresponding to the passivation layer of the induction thin film transistor, the second light transmission area is arranged corresponding to the passivation layer of the time sequence thin film transistor, and the third light transmission area is arranged corresponding to the pixel electrode layer of the storage capacitor.
Specifically, the mask plate in the embodiment of the present invention is a halftone mask plate, the transmittance of the first light-shielding region and the transmittance of the third light-shielding region are 0, the transmittance of the second light-shielding region is 0 to 100%, and the transmittance of the light-transmitting region is 100%.
Referring to fig. 3, fig. 4 and fig. 5, in the embodiment of the present application, the first light-shielding region 211 of the mask blank 2 is disposed corresponding to the sensing tft region a, the second light-shielding region 212 is disposed corresponding to the timing tft region b, and the third light-shielding region 213 is disposed corresponding to the storage capacitor region c; the first light-transmitting region 221 is disposed corresponding to the passivation layer 127 of the sensing tft region a, the second light-transmitting region 222 is disposed corresponding to the passivation layer 127 of the timing tft region b, and the third light-transmitting region 223 is disposed corresponding to the pixel electrode layer 128 of the storage capacitor region c; the mask 2 is used for exposing the shading deposition layer 129, the transmittance of the first shading area 211 and the third shading area 213 is 0, the transmittance of the second shading area 212 is 0-100%, the transmittance of the transparent area 22 is 100%, the exposed shading deposition layer 129 is subjected to yellow light processing such as developing and baking, a first spacer 1291 is formed in the first transparent area 221, a second spacer 1292 is formed in the second transparent area 222, a third spacer 1293 is formed in the third transparent area 223, and a shading layer 1294 is formed in the second shading area 212.
It should be understood that, in the embodiments of the present application, specific positions of the spacers on the passivation layer and the pixel electrode layer are not limited, and the spacers may be at any position above an interval between the passivation layer and the pixel electrode layer; the width of the light shielding layer in the embodiment of the present application only needs to cover the active layer corresponding to the time sequence thin film transistor, and the width range and the like of the light shielding layer are not limited in the embodiment of the present application.
Referring to fig. 6, specifically, in the embodiment of the present application, after the mask 2 is used to perform exposure and development processing on the shading deposition layer 129 to obtain the laser sensing array substrate 12 having the spacer and the shading layer 1294, a glass cover plate 11 is covered on a first surface of the laser sensing array substrate 12, and a first glue layer 14 is disposed between the laser sensing array substrate 12 and the glass cover plate 11 for bonding.
Specifically, in the embodiment of the present application, the height of the first glue layer 14 ranges from 3 μm to 10 μm.
To sum up, the embodiment of the present application provides a method for manufacturing a laser sensing array substrate, and according to the method for manufacturing a laser sensing array substrate provided by the embodiment of the present application, a columnar spacer with a certain height can be manufactured on the laser sensing array substrate, and the distance between the laser sensing array substrate and a glass cover plate can be controlled by the manufactured columnar spacer, so that a thin film transistor and a metal circuit of the laser sensing array substrate can be prevented from being crushed by the glass cover plate and a foreign object, and the thickness of glue used when the laser sensing array substrate and the glass substrate are bonded can be reduced while the thin film transistor and the metal circuit of the laser sensing array substrate are prevented from being crushed by the glass cover plate and the foreign object, thereby realizing the lightness and thinness of a laser display device.
The above description is made on the method for manufacturing the laser sensing array substrate in the embodiment of the present application, and the present invention is described below from the perspective of the display device 1, please refer to fig. 7, the embodiment of the present application further provides a display device 1, the display device 1 includes a display panel 13, a laser sensing array substrate 12 and a glass cover plate 11, the first surface of the display panel 13 is sequentially provided with the laser sensing array substrate 12 and the glass cover plate 11, the display panel 13 further includes a backlight module, the display panel 13 and the laser sensing array substrate 12 are provided with a second glue layer 15, a first glue layer 14 is provided between the laser sensing array substrate 12 and the display panel 13, wherein the laser sensing array substrate 12 includes a substrate 121 having a first surface and a sensing thin film transistor a formed on the first surface of the substrate 121, The display panel 13 includes an array substrate 131, a liquid crystal layer 132 and a color film substrate 133, wherein the liquid crystal layer 132 and the color film substrate 133 are sequentially disposed on a first surface of the array substrate 131, and the first glue layer 14 has a height ranging from 3 μm to 10 μm.
Specifically, in the embodiment of the present application, the array substrate includes a substrate layer, a buffer layer disposed on the substrate layer, an active layer disposed on the buffer layer, a gate insulating layer disposed on the active layer, a gate layer disposed on the gate insulating layer, an interlayer dielectric layer disposed on the gate layer, a source drain layer disposed on the interlayer dielectric layer, a planarization layer disposed on the source drain layer, a pixel electrode layer disposed on the planarization layer, and a pixel definition layer disposed on the pixel electrode layer.
To sum up, this application embodiment provides a display device, and this display device is including adopting the laser-induced array substrate of this application embodiment preparation, the laser-induced array substrate preparation has the column spacer of a take the altitude, the distance between laser-induced array substrate and the glass apron can be controlled to the column spacer, can prevent that glass apron and foreign matter from crushing thin film transistor and the metal circuit of laser-induced array substrate, when preventing that glass apron and foreign matter from crushing thin film transistor and the metal circuit of laser-induced array substrate, this application embodiment can also reduce the thickness that laser-induced array substrate and glass substrate used glue when bonding, realizes laser display device's frivolousization.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments. The embodiments described above are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present application, except for the design of the embodiments in the present application, which is consistent with the embodiments in the present application, belong to the protection scope of the present application.
The above detailed description is made on the laser sensing array substrate manufacturing method and the display device provided in the embodiments of the present application, and specific examples are applied in the detailed description to explain the principles and the embodiments of the present application, and the description of the above embodiments is only used to help understanding the technical solutions and the core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (13)

1. A display device, comprising: display panel and laser-induced array substrate, display panel's first surface sets gradually laser-induced array substrate, display panel with laser-induced array substrate is provided with the second glue layer, wherein, laser-induced array substrate include one have the first surface substrate and be formed at the response thin film transistor, chronogenesis thin film transistor, storage capacitor, first spacer, second spacer, third spacer and the light shield layer of the first surface of substrate, laser-induced array substrate's first surface covers a glass apron, laser-induced array substrate with set up first glue layer between the glass apron and laminate.
2. The display device according to claim 1, wherein the first spacer is disposed on a side of the pixel electrode or a side of the passivation layer corresponding to the sensing thin film transistor.
3. The display device according to claim 1, wherein the second spacer is provided on a side of the light-shielding layer.
4. The display device according to claim 1, wherein the third spacer is provided on a side of the pixel electrode corresponding to the storage capacitor.
5. The display device according to claim 1, wherein the display panel comprises an array substrate, a liquid crystal layer and a color film substrate, and the liquid crystal layer and the color film substrate are sequentially disposed on the first surface of the array substrate.
6. A preparation method of a laser induction array substrate is characterized by comprising the following steps:
providing a substrate base plate;
sequentially forming a grid electrode, a grid electrode insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode, a passivation layer and a pixel electrode on the surface of the substrate base plate through deposition, etching and developing processes to obtain a first array base plate with a first surface, wherein the first array base plate comprises an induction thin film transistor area, a time sequence thin film transistor area and a storage capacitor area, the induction thin film transistor area is provided with an induction thin film transistor, the time sequence thin film transistor area is provided with a time sequence thin film transistor, and the storage capacitor area is provided with a storage capacitor;
depositing a shading deposition layer on the first surface of the first array substrate;
and exposing and developing the shading deposition layer to form the laser induction array substrate with the spacer and the shading layer.
7. The method for preparing a laser induction array substrate according to claim 6, wherein the exposing and developing processes are performed on the light shielding deposition layer, and the method comprises the following steps:
exposing and developing the shading deposition layer by using a mask;
the mask comprises a shading area and a light transmitting area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is arranged corresponding to the pixel electrode layer of the induction thin film transistor area, the second light transmission area is arranged corresponding to the pixel electrode layer of the time sequence thin film transistor area, and the third light transmission area is arranged corresponding to the pixel electrode layer of the storage capacitor area.
8. The method for preparing a laser induction array substrate according to claim 6, wherein the exposing and developing processes are performed on the light shielding deposition layer, and the method comprises the following steps:
exposing and developing the shading deposition layer by using a mask;
the mask comprises a shading area and a light transmitting area, the shading area comprises a first shading area, a second shading area and a third shading area, the first shading area is arranged corresponding to the induction thin film transistor area, the second shading area is arranged corresponding to the time sequence thin film transistor area, and the third shading area is arranged corresponding to the storage capacitor area; the light transmission area comprises a first light transmission area, a second light transmission area and a third light transmission area, the first light transmission area is arranged corresponding to the passivation layer of the induction thin film transistor area, the second light transmission area is arranged corresponding to the passivation layer of the time sequence thin film transistor area, and the third light transmission area is arranged corresponding to the pixel electrode layer of the storage capacitor area.
9. The method for preparing a laser-induced array substrate according to any one of claims 7 or 8, wherein the mask is a halftone mask.
10. The method for preparing a laser sensing array substrate according to claim 6, wherein exposing and developing the light-shielding deposition layer to form a laser sensing array substrate having spacers and a light-shielding layer comprises:
and exposing and developing the shading sedimentary deposit by adopting the mask, forming a first spacer at the position of the shading sedimentary deposit corresponding to the first light transmission area, forming a second spacer at the position of the shading sedimentary deposit corresponding to the second light transmission area, forming a third spacer at the position of the shading sedimentary deposit corresponding to the third light transmission area, and forming a shading layer at the position of the shading sedimentary deposit corresponding to the second shading area.
11. The method of claim 6, wherein the light-shielding deposition layer has a height ranging from 3 μm to 10 μm.
12. The method for preparing a laser-induced array substrate according to claim 6, wherein after the step of forming the laser-induced array substrate having the spacers and the light-shielding layer, the method comprises:
covering a glass cover plate on the first surface of the laser sensing array substrate, and arranging a first glue layer between the laser sensing array substrate and the glass cover plate for bonding.
13. The method of claim 12, wherein the first glue layer has a height ranging from 3 μm to 10 μm.
CN202011254000.6A 2020-11-11 2020-11-11 Preparation method of laser induction array substrate and display device Active CN112415825B (en)

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