CN112410797A - Cleaning method, cleaning apparatus and cleaned substrate - Google Patents
Cleaning method, cleaning apparatus and cleaned substrate Download PDFInfo
- Publication number
- CN112410797A CN112410797A CN201910767736.4A CN201910767736A CN112410797A CN 112410797 A CN112410797 A CN 112410797A CN 201910767736 A CN201910767736 A CN 201910767736A CN 112410797 A CN112410797 A CN 112410797A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- substrate
- parts
- base material
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 396
- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 73
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 239000004094 surface-active agent Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 21
- 239000002738 chelating agent Substances 0.000 claims abstract description 12
- 230000002378 acidificating effect Effects 0.000 claims abstract description 11
- 239000006184 cosolvent Substances 0.000 claims abstract description 11
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 10
- 239000002585 base Substances 0.000 claims description 61
- 229940077388 benzenesulfonate Drugs 0.000 claims description 13
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 claims description 13
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 9
- 150000002191 fatty alcohols Chemical class 0.000 claims description 9
- 229920000570 polyether Polymers 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 229910000288 alkali metal carbonate Inorganic materials 0.000 claims description 3
- 150000008041 alkali metal carbonates Chemical class 0.000 claims description 3
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 3
- 229910000318 alkali metal phosphate Inorganic materials 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 150000007942 carboxylates Chemical class 0.000 claims description 3
- -1 fatty alcohol amine Chemical class 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 150000005846 sugar alcohols Polymers 0.000 claims description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 239000012459 cleaning agent Substances 0.000 description 39
- 239000002994 raw material Substances 0.000 description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 18
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 6
- 239000011591 potassium Substances 0.000 description 6
- 229960003975 potassium Drugs 0.000 description 6
- 229910052700 potassium Inorganic materials 0.000 description 6
- 239000000176 sodium gluconate Substances 0.000 description 6
- 235000012207 sodium gluconate Nutrition 0.000 description 6
- 229940005574 sodium gluconate Drugs 0.000 description 6
- 239000002202 Polyethylene glycol Substances 0.000 description 5
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 4
- DDAQLPYLBPPPRV-UHFFFAOYSA-N [4-(hydroxymethyl)-2-oxo-1,3,2lambda5-dioxaphosphetan-2-yl] dihydrogen phosphate Chemical compound OCC1OP(=O)(OP(O)(O)=O)O1 DDAQLPYLBPPPRV-UHFFFAOYSA-N 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- ABHHITAVUODQNA-UHFFFAOYSA-M potassium;benzenesulfonate Chemical compound [K+].[O-]S(=O)(=O)C1=CC=CC=C1 ABHHITAVUODQNA-UHFFFAOYSA-M 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- HLWRUJAIJJEZDL-UHFFFAOYSA-M sodium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetate Chemical compound [Na+].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC([O-])=O HLWRUJAIJJEZDL-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 235000011181 potassium carbonates Nutrition 0.000 description 2
- 239000001508 potassium citrate Substances 0.000 description 2
- 229960002635 potassium citrate Drugs 0.000 description 2
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 2
- 235000011082 potassium citrates Nutrition 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- BAERPNBPLZWCES-UHFFFAOYSA-N (2-hydroxy-1-phosphonoethyl)phosphonic acid Chemical compound OCC(P(O)(O)=O)P(O)(O)=O BAERPNBPLZWCES-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 1
- 235000019797 dipotassium phosphate Nutrition 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229960001790 sodium citrate Drugs 0.000 description 1
- 235000011083 sodium citrates Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G3/00—Apparatus for cleaning or pickling metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The application provides a cleaning method, which comprises the following steps: cleaning a substrate by adopting a first cleaning solution, wherein the first cleaning solution comprises water, an alkaline substance, a cosolvent and a first surfactant; and cleaning the substrate by using a second cleaning solution, wherein the second cleaning solution comprises water, an acidic substance, a chelating agent and a second surfactant. The application also provides a cleaning device, which comprises a first cleaning device; a second cleaning device; and a transport device for transporting the substrate to the first cleaning device and the second cleaning device; the first cleaning device adopts a first cleaning liquid to clean the substrate, and the second cleaning device adopts a second cleaning liquidThe wash solution cleans the substrate. The application also provides a substrate, and the surface of the cleaned substrate contains oil stains, and the area of the oil stains is less than 1mm2. The present application also provides a substrate having a surface comprising a concentration of metal ions of less than 1000 ppm. The cleaning method can effectively remove watermarks, dirt and oil stains on the surface of the base material.
Description
Technical Field
The present application relates to a cleaning method for cleaning a substrate, a cleaning apparatus and a cleaned substrate.
Background
In the prior art, a protective film is formed on the surface of a substrate by a PVD (physical vapor deposition) process for better protecting the substrate. The surface of the substrate is usually cleaned before the substrate is coated, but after the surface of the substrate is cleaned by using the existing cleaning agent and the cleaning method adopting the cleaning agent, the watermark, dirt, oil stain and water vapor in the surface clearance on the surface of the substrate are too much, so that the yield of the subsequent PVD process is low, and the process development is influenced.
Disclosure of Invention
In view of the above, it is necessary to provide a cleaning method, a cleaning apparatus and a cleaned substrate for cleaning a substrate before plating, so as to solve the above problems.
A first aspect of the application proposes a cleaning method for cleaning a substrate, comprising the steps of:
cleaning the substrate by using a first cleaning solution, wherein the first cleaning solution comprises water, an alkaline substance, a cosolvent and a first surfactant;
and cleaning the substrate by using a second cleaning solution, wherein the second cleaning solution comprises water, an acidic substance, a chelating agent and a second surfactant.
A second aspect of the present application provides a cleaning apparatus for cleaning a substrate, the cleaning apparatus comprising:
a first cleaning device;
a second cleaning device; and
a transport device for transporting the substrate to the first cleaning device and the second cleaning device;
the first cleaning device is used for cleaning the base material by adopting a first cleaning solution, and the second cleaning device is used for cleaning the base material by adopting a second cleaning solution.
In a third aspect, the present application provides a substrate, which has been cleaned by the cleaning method of the first aspect, and the surface of which has an area containing oil stains of less than 1mm2。
In a fourth aspect, the present application provides a substrate, which has a surface comprising metal ions at a concentration of less than 1000ppm, when cleaned by the cleaning method of the first aspect of the present application.
According to the method and the device for cleaning the surface of the substrate, the surface of the substrate is cleaned by sequentially adopting the first cleaning solution and the second cleaning solution, and watermarks, dirt, oil stains, metal ions and water vapor in surface gaps on the surface of the substrate can be effectively removed, so that the yield of the coated substrate is improved.
Drawings
Fig. 1 is a flow chart of a cleaning method provided in the present application.
FIG. 2 is a table showing the formulation of cleaning solutions for cleaning pre-coated substrates according to examples and comparative examples provided in the present application.
FIG. 3 is a table of cleaning conditions for cleaning the pre-coated substrate with the cleaning solutions of the example and the comparative example shown in FIG. 2.
FIG. 4 shows the results of the cleaning agents of the examples and comparative examples provided in the present application after cleaning a substrate before plating.
The following detailed description will further illustrate the present application in conjunction with the above-described figures.
Detailed Description
In order that the above objects, features and advantages of the present application may be more clearly understood, the present application is described in detail below with reference to specific embodiments. In addition, the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth to provide a thorough understanding of the present application, and the described embodiments are merely a subset of the embodiments of the present application, rather than all embodiments. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application.
As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
One embodiment of the application provides a cleaning agent for cleaning a substrate before coating. The cleaning agent comprises a first cleaning solution and a second cleaning solution.
In one embodiment, the first cleaning solution comprises, in parts by weight: 1000 parts of water, 2-20 parts of alkaline substance, 0.1-20 parts of cosolvent and 2-25 parts of first surfactant.
In one embodiment, the alkaline substance is at least one selected from the group consisting of an alkali metal hydroxide, an alkali metal carbonate, and an alkali metal phosphate.
Specifically, the alkali metal hydroxide is at least one selected from the group consisting of sodium hydroxide and potassium hydroxide.
The alkali metal carbonate is at least one selected from the group consisting of sodium carbonate, sodium bicarbonate, potassium carbonate, and potassium bicarbonate.
The alkali metal phosphate is at least one selected from the group consisting of sodium phosphate, sodium monohydrogen phosphate, potassium phosphate, and potassium monohydrogen phosphate.
In one embodiment, the upper end of the range of the amount of the basic substance is selected from 19, 15, 12, 10, 9, 8.5; the lower end of the range of the content of the basic substance is selected from 2.5, 3, 3.5, 4, 5, 7, 8.
In one embodiment, the co-solvent is at least one selected from the group consisting of fatty alcohols, fatty alcohol amines, and polyalcohols.
Specifically, the fatty alcohol is at least one selected from the group consisting of glycerol and n-butanol.
The fatty alcohol amine is selected from triethanolamine.
The polyalcohol is selected from polyethylene glycol.
In one embodiment, the upper end of the range of co-solvent content is selected from 19, 18, 16, 10, 8, 7, 3, 2, 1, 0.8, 0.5; the lower end of the range of co-solvent content is selected from 0.2, 0.4, 0.8, 3, 5, 10.
In one embodiment, the first surfactant is at least one selected from the group consisting of fatty alcohol polyoxyethylene ether, alkylphenol polyether, alkylphenol sulfonate, and alkylphenol benzenesulfonate.
In one embodiment, the upper end of the range of the first surfactant is selected from 24, 20, 18, 15, 10, 8, 6, 4; the lower limit of the range of the first surfactant is selected from 3, 5, 8, 10, 16, 20.
It should be noted that the upper limit and the lower limit of the above content range are subject to the practical meaning that the content range is not affected, that is, the lower limit is not more than the upper limit.
In one embodiment, the second cleaning solution comprises, in parts by weight: 1000 parts of water, 4-100 parts of acidic substances, 3-30 parts of chelating agent and 0.5-15 parts of second surfactant.
In one embodiment, the acidic substance is at least one selected from the group consisting of carboxylic acid, sulfonic acid and phosphoric acid.
Specifically, the carboxylic acid is at least one selected from the group consisting of oxalic acid, citric acid, acetic acid, oxalic acid, ethylenediaminetetraacetic acid.
The sulfonic acid is at least one selected from the group consisting of sulfamic acid, methanesulfonic acid, benzenesulfonic acid.
The phosphoric acid is selected from hydroxyethylidene diphosphonic acid.
In one embodiment, the upper end of the range of the amount of the acidic material is selected from 90, 80, 70, 60, 50, 40, 30, 20, 10, 8; the lower end of the range of the content of the acidic substance is selected from 5, 6, 8, 10, 13, 16, 20, 30.
In one embodiment, the chelating agent is selected from carboxylates. The chelating agent is used to form a chelating structure with the residual metal ions on the substrate to remove the residual metal ions.
Specifically, the carboxylate is at least one selected from the group consisting of sodium citrate, sodium gluconate, potassium citrate, and sodium ethylenediaminetetraacetate.
In one embodiment, the upper end of the range of chelating agent content is selected from 28, 26, 23, 20, 18, 16, 10; the lower end of the range of chelating agent content is selected from 4, 6, 8, 10, 12, 14, 17, 20.
In one embodiment, the second surfactant includes at least one selected from the group consisting of fatty alcohol polyoxyethylene ether, alkylphenol polyether, alkylphenol sulfonate, and alkylphenol benzenesulfonate.
In one embodiment, the upper end of the range of the second surfactant is selected from 13, 12, 11, 10, 9, 8, 7, 6; the lower limit of the content range of the second surfactant is selected from 0.8, 1, 3, 5, 7, and 9.
It should be noted that the upper limit and the lower limit of the above content range are subject to the practical meaning that the content range is not affected, that is, the lower limit is not more than the upper limit.
One embodiment of the present application also provides a cleaning apparatus (not shown) for cleaning a substrate, the cleaning apparatus including a transport device (not shown), a first cleaning device (not shown), and a second cleaning device (not shown).
Specifically, the conveying device is used for conveying the substrate to the first cleaning device and the second cleaning device. The first cleaning device is used for containing a first cleaning liquid and cleaning the base material by adopting the first cleaning liquid. The second cleaning device is used for containing a second cleaning liquid and cleaning the base material by adopting the second cleaning liquid. In this embodiment, the first cleaning device and the second cleaning device include, but are not limited to, a cleaning machine. The transport device includes, but is not limited to, a gripper, or other mechanism capable of transporting the substrate.
In one embodiment of the present application, the cleaning apparatus further includes a third cleaning device and a drying device. The third cleaning device is used for cleaning the base material cleaned by the first cleaning device or the third cleaning device is used for cleaning the base material cleaned by the second cleaning device; the drying device is used for drying the base material cleaned by the third device. Specifically, the third cleaning device includes, but is not limited to, a cleaning machine. The drying apparatus includes, but is not limited to, a dryer.
Referring to fig. 1, fig. 1 is a flowchart illustrating a cleaning method according to the present application. The cleaning method provided by the application comprises the following steps:
step S101, cleaning the substrate by using a first cleaning solution, wherein the first cleaning solution comprises water, an alkaline substance, a cosolvent and a first surfactant.
Specifically, in one embodiment, the substrate is a metallic material, such as aluminum, stainless steel. In this example, the base material was stainless steel.
The conveying device conveys the base material to the first cleaning device, and then the first cleaning device cleans the base material at least once by adopting the first cleaning liquid. The cleaning temperature of the first cleaning liquid is 44-80 ℃, and the cleaning time is 2-20min each time, so that watermarks, dirt, metal ions and oil dirt on the surface of the base material can be better removed.
In one embodiment, the upper limit of the temperature for cleaning with the first cleaning solution is selected from the group consisting of 75 ℃, 73 ℃, 70 ℃, 68 ℃, 65 ℃, 63 ℃, 60 ℃, 58 ℃, 55 ℃, 53 ℃, 50 ℃, 48 ℃; the lower limit of the temperature for cleaning with the first cleaning liquid is selected from 46 ℃, 48 ℃, 50 ℃, 52 ℃, 55 ℃, 58 ℃, 60 ℃, 63 ℃, 66 ℃, 68 ℃, 70 ℃, 73 ℃, 76 ℃ and 78 ℃.
When the substrate is cleaned by the first cleaning liquid, the upper limit of time of each cleaning is selected from 19min, 18min, 17min, 16min, 15min, 14min, 13min, 12min, 11min, 10min, 9min, 8min, 7min, 6min, 5min, 4min and 3 min; the lower limit of each cleaning time is selected from 3.5min, 4.5min, 5.5min, 6.5min, 7.5min, 8.5min, 9.5min, 10.5min, 11.5min, 12.5min, 13.5min, 14.5min, 15.5min, 16.5min, 17.5min, 18.5min and 19.5 min.
It should be noted that the upper limit and the lower limit of the above range are subject to the practical meaning that the range is not affected, i.e., the lower limit is not more than the upper limit.
And step S102, cleaning the base material by using a second cleaning solution, wherein the second cleaning solution comprises water, an acidic substance, a chelating agent and a second surfactant.
Specifically, the conveying device conveys the base material cleaned by the first cleaning liquid to a second cleaning device, and then the second cleaning device cleans the base material cleaned by the first cleaning liquid by adopting the second cleaning liquid, wherein the cleaning temperature is 64-96 ℃, and the time of each cleaning liquid is 2-20min, so as to remove dirt and oil stains on the surface of the base material and in the surface clearance.
In one embodiment, the upper limit of the temperature at which the substrate is cleaned with the second cleaning liquid is selected from the group consisting of 95 ℃, 94 ℃, 93 ℃, 92 ℃, 91 ℃, 90 ℃, 89 ℃, 88 ℃, 87 ℃, 86 ℃, 85 ℃, 84 ℃, 83 ℃, 82 ℃, 81 ℃, 80 ℃, 79 ℃, 78 ℃, 77 ℃, 76 ℃, 75 ℃, 74 ℃, 73 ℃, 72 ℃, 71 ℃, 70 ℃, 69 ℃, 68 ℃, 67 ℃, 66 ℃, 65 ℃; the lower limit of the temperature for cleaning the substrate with the second cleaning liquid is selected from the group consisting of 65.5 ℃, 66.5 ℃, 67.5 ℃, 68.5 ℃, 69.5 ℃, 70.5 ℃, 71.5 ℃, 72.5 ℃, 73.5 ℃, 74.5 ℃, 75.5 ℃, 76.5 ℃, 77.5 ℃, 78.5 ℃, 79.5 ℃, 80.5 ℃, 81.5 ℃, 82.5 ℃, 83.5 ℃, 84.5 ℃, 85.5 ℃, 86.5 ℃, 87.5 ℃, 88.5 ℃, 89.5 ℃, 90.5 ℃, 91.5 ℃, 92.5 ℃, 93.5 ℃, 94.5 ℃ and 95.5 ℃.
When the substrate is cleaned by the second cleaning liquid, the upper limit of time of each cleaning is selected from 19min, 18min, 17min, 16min, 15min, 14min, 13min, 12min, 11min, 10min, 9min, 8min, 7min, 6min, 5min, 4min and 3 min; the lower limit of each cleaning time is selected from 3.5min, 4.5min, 5.5min, 6.5min, 7.5min, 8.5min, 9.5min, 10.5min, 11.5min, 12.5min, 13.5min, 14.5min, 15.5min, 16.5min, 17.5min, 18.5min and 19.5 min.
It should be noted that the upper limit and the lower limit of the above range are subject to the practical meaning that the range is not affected, i.e., the lower limit is not more than the upper limit.
Step S103, baking the cleaned base material.
Specifically, the conveying device conveys the substrate cleaned by the second cleaning solution to the drying device, and the drying device dries the substrate.
In one embodiment, after the substrate is cleaned by the first cleaning device or the second cleaning device, the substrate cleaned by the first cleaning device or the second cleaning device may be cleaned by a third cleaning device.
In one embodiment, after step S102, it may also be checked whether the cleaning is qualified. The surface of the base material is free from dirt, oil stain and watermarks when the base material is qualified for cleaning.
And after the base material is cleaned according to the process, baking the base material to remove water vapor in gaps on the surface of the base material when the surface of the base material is observed to be free from dirt, oil stain and watermarks. In one embodiment, the presence of smudging, smudging or watermarks on the surface of the substrate is observed manually. And testing the concentration of the metal ions remained on the surface of the cleaned substrate by a metal ion detector.
It is understood that in other embodiments, a plurality of sets of pictures of the substrate surface may be captured by the vision capture device, and the pictures may be compared with the pre-stored pictures of the substrate surface that are qualified for cleaning to determine whether the substrate surface is qualified for cleaning.
Further, after the baking treatment, the surface of the base material may be coated.
In one embodiment, the surface of the substrate is coated with a protective film by a PVD (physical vapor deposition) process. The verification shows that the substrate cleaned by the cleaning method has lower discoloration rate and stripping rate after film coating.
According to the cleaning method and the cleaning equipment, the first cleaning liquid and the second cleaning liquid are sequentially adopted to clean the surface of the base material, so that watermarks, dirt, oil stains and water vapor in surface gaps on the surface of the base material can be effectively removed, and the surface of the base material after being coated with a film is prevented from having different colors. And the substrate is baked after being cleaned so as to remove water vapor in the gaps on the surface of the substrate, so that the surface of the coated substrate is prevented from being demoulded, and the yield of the coated substrate is further improved.
In one embodiment of the present application, the surface of the substrate after cleaning has an area of less than 1mm that is contaminated with oil2。
In another embodiment of the present application, the surface of the substrate contains metal ions at a concentration of less than 1000ppm after cleaning.
Referring to fig. 2 to 4, fig. 2 is a table showing the ratio of cleaning liquids for cleaning a substrate before coating according to the examples and comparative examples provided in the present application. FIG. 3 is a table of cleaning conditions for cleaning the pre-coated substrate with the cleaning solutions of the example and the comparative example shown in FIG. 2. FIG. 4 shows the results of the cleaning agents of the examples and comparative examples provided in the present application after cleaning a substrate before plating. The cleaning agent of the present application will be described with reference to examples.
Example one
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 8 parts of potassium hydroxide, 0.1 part of triethanolamine and 16 parts of fatty alcohol polyether; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 100 parts of citric acid, 17.5 parts of sodium gluconate and 6 parts of nonylphenol polyether; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 44 ℃, the cleaning time is 20min, and the cleaning times are 1 time; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 64 ℃, the cleaning time is 20min, and the cleaning times are 1 time; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after the cleaning is verified to be 8.1%, the smudge proportion is 2.1%, the watermark proportion is 0%, and the yield is 89.8%.
Example two
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 10 parts of potassium hydroxide, 0.5 part of triethanolamine and 20 parts of fatty alcohol polyether; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 30 parts of citric acid, 22 parts of sodium gluconate and 7.5 parts of nonylphenol polyether; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 50 ℃, the cleaning time is 16min, and the cleaning times are 1 time; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 70 ℃, the cleaning time is 17min, and the cleaning times are 1 time; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after cleaning is proved to be 5.4%, the smudge proportion is 2.7%, the watermark proportion is 0% and the yield is 91.9%.
EXAMPLE III
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 12 parts of potassium hydroxide, 5 parts of triethanolamine and 25 parts of fatty alcohol polyether; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 60 parts of citric acid, 26.5 parts of sodium gluconate and 9.5 parts of nonylphenol polyether; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 55 ℃, the cleaning time is 14min, and the cleaning times are 1 time; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 76 ℃, the cleaning time is 12min, and the cleaning times are 1 time; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after the cleaning is proved to be 5.8 percent, the smudge proportion is 3 percent, the watermark proportion is 0.3 percent and the yield is 90.9 percent.
Example four
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 18 parts of potassium carbonate, 15 parts of glycerol and 2 parts of sodium alkylphenol benzenesulfonate; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 4 parts of sulfamic acid, 3 parts of potassium citrate and 0.5 part of sodium alkylphenol benzenesulfonate; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 60 ℃, the cleaning time is 12min, and the cleaning times are 1 time; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 82 ℃, the cleaning time is 10min, and the cleaning times are 1 time; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after the cleaning is proved to be 3.5%, the smudge proportion is 1%, the watermark proportion is 0% and the yield is 95.5%.
EXAMPLE five
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 2 parts of sodium monohydrogen phosphate, 18 parts of polyethylene glycol and 5 parts of potassium alkylphenol benzenesulfonate; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 10 parts of hydroxyethylidene diphosphate, 30 parts of ethylene diamine tetraacetic acid sodium salt and 15 parts of alkylphenol benzene sulfonic acid potassium salt; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 65 ℃, the cleaning time is 10min, and the cleaning times are 1 time; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 85 ℃, the cleaning time is 8min, and the cleaning times are 1 time; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the ratio of dirt to the dirt on the base material after the cleaning is verified to be 6%, the ratio of the dirt to be 3.2%, the ratio of the watermark to be 0.4% and the yield to be 90.4%.
EXAMPLE six
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 2 parts of sodium monohydrogen phosphate, 18 parts of polyethylene glycol and 5 parts of potassium alkylphenol benzenesulfonate; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 10 parts of hydroxyethylidene diphosphate, 30 parts of ethylene diamine tetraacetic acid sodium salt and 15 parts of alkylphenol benzene sulfonic acid potassium salt; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 70 ℃, the cleaning time is 8min, and the cleaning times are 2 times; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 90 ℃, the cleaning time is 5min, and the cleaning times are 1 time; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after cleaning is proved to be 5.1%, the smudge proportion is 2.3%, the watermark proportion is 0.3%, and the yield is 92.3%.
EXAMPLE seven
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 2 parts of sodium monohydrogen phosphate, 18 parts of polyethylene glycol and 5 parts of potassium alkylphenol benzenesulfonate; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 10 parts of hydroxyethylidene diphosphate, 30 parts of ethylene diamine tetraacetic acid sodium salt and 15 parts of alkylphenol benzene sulfonic acid potassium salt; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 75 ℃, the cleaning time is 5min, and the cleaning times are 1 time; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 94 ℃, the cleaning time is 3min, and the cleaning times are 2 times; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after cleaning is proved to be 4.5%, the smudge proportion is 2.6%, the watermark proportion is 0.2% and the yield is 92.7%.
Example eight
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 2 parts of sodium monohydrogen phosphate, 18 parts of polyethylene glycol and 5 parts of potassium alkylphenol benzenesulfonate; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 10 parts of hydroxyethylidene diphosphate, 30 parts of ethylene diamine tetraacetic acid sodium salt and 15 parts of alkylphenol benzene sulfonic acid potassium salt; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 80 ℃, the cleaning time is 2min, and the cleaning times are 2 times; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 96 ℃, the cleaning time is 2min, and the cleaning times are 2 times; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after cleaning is proved to be 3.1%, the smudge proportion is 1.5%, the watermark proportion is 0%, and the yield is 95.4%.
Comparative example 1
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 1 part of potassium hydroxide, 0.05 part of glycerol and 1 part of potassium alkylphenol benzenesulfonate; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 3 parts of citric acid, 2 parts of sodium gluconate and 0.3 part of sodium alkylphenol benzenesulfonate; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 82 ℃, the cleaning time is 25min, and the cleaning times are 2 times; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 98 ℃, the cleaning time is 22min, and the cleaning times are 2 times; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after cleaning is proved to be 20.3%, the smudge proportion is 10.5%, the watermark proportion is 6.5% and the yield is 62.7%.
Comparative example No. two
Firstly, preparing a cleaning agent, wherein the cleaning agent comprises a first cleaning solution and a second cleaning solution, and the first cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 22 parts of potassium hydroxide, 22 parts of glycerol and 26 parts of potassium alkylphenol benzenesulfonate; the second cleaning solution comprises the following raw materials in parts by weight: 1000 parts of water, 102 parts of citric acid, 33 parts of sodium gluconate and 16 parts of sodium alkylphenol benzenesulfonate; then, cleaning the base material by adopting a first cleaning solution, wherein the cleaning temperature of the first cleaning solution is 43 ℃, the cleaning time is 1min, and the cleaning times are 1 time; then, cleaning the base material by adopting a second cleaning solution, wherein the cleaning temperature of the second cleaning solution is 63 ℃, the cleaning time is 1min, and the cleaning times are 1 time; and finally, verifying the cleaning result of the base material.
The cleaning agent prepared by the proportion has the advantages that the smudge proportion on the base material after cleaning is proved to be 25.6%, the smudge proportion is 8.9%, the watermark proportion is 8.3% and the yield is 57.2%.
As shown in fig. 4, in the first to eighth embodiments, the cleaning yield of the cleaning agent is 89.8% to 95.5%. The cleaning yield of comparative example one was 62.7%, and the cleaning yield of comparative example two was 57.2%. That is, the cleaning yield of the cleaning agent in the first to eighth examples was controlled to about 90%, and the cleaning yield of the first and second comparative examples was controlled to about 60%, so that the example was able to remove the stains, oil stains and watermarks on the surface of the substrate more effectively than the comparative examples.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned. The word "comprising" does not exclude other elements or steps, and the singular does not exclude the plural. The units or computer means recited in the computer means claims may also be implemented by the same unit or computer means, either in software or in hardware. The terms first, second, etc. are used to denote names, but not any particular order.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present application and not for limiting, and although the present application is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present application without departing from the spirit and scope of the technical solutions of the present application.
Claims (16)
1. A cleaning method for cleaning a substrate, comprising the steps of:
cleaning the substrate by using a first cleaning solution, wherein the first cleaning solution comprises water, an alkaline substance, a cosolvent and a first surfactant;
and cleaning the substrate by using a second cleaning solution, wherein the second cleaning solution comprises water, an acidic substance, a chelating agent and a second surfactant.
2. The cleaning method according to claim 1, wherein the alkaline substance is at least one selected from the group consisting of an alkali metal hydroxide, an alkali metal carbonate, and an alkali metal phosphate.
3. The cleaning method according to claim 1, wherein the co-solvent is at least one selected from the group consisting of fatty alcohol, fatty alcohol amine and polyalcohol.
4. The cleaning method according to claim 1, wherein the acidic substance is at least one selected from the group consisting of carboxylic acid, sulfonic acid and phosphoric acid.
5. The cleaning process of claim 1, wherein the chelating agent is selected from the group consisting of carboxylates.
6. The cleaning method of claim 1, wherein the first surfactant and the second surfactant are each independently selected from at least one of the group consisting of fatty alcohol polyoxyethylene ether, alkylphenol polyether, alkylphenol sulfonate, and alkylphenol benzenesulfonate.
7. The cleaning method according to claim 1, wherein the cleaning temperature for cleaning the substrate with the first cleaning liquid is 44 ℃ to 80 ℃.
8. The cleaning method according to claim 1, wherein the cleaning time for cleaning the substrate with the first cleaning liquid is 2 to 20 min.
9. The cleaning method of claim 1, wherein the temperature for cleaning the substrate with the second cleaning solution is 64 ℃ to 96 ℃.
10. The cleaning method according to claim 1, wherein the cleaning time for cleaning the substrate with the second cleaning liquid is 2 to 20 min.
11. The cleaning method as claimed in claim 1, wherein the first cleaning liquid comprises: 1000 parts of water, 2-20 parts of alkaline substance, 0.1-20 parts of cosolvent and 2-25 parts of first surfactant.
12. The cleaning method as claimed in claim 1, wherein the second cleaning liquid comprises: 1000 parts of water, 4-100 parts of acidic substance, 3-30 parts of chelating agent and 0.5-15 parts of second surfactant.
13. A cleaning apparatus for cleaning a substrate, the cleaning apparatus comprising:
a first cleaning device comprising a first cleaning fluid; and
a second cleaning device comprising a second cleaning fluid;
a transport device for transporting the substrate to the first cleaning device and the second cleaning device; wherein the first cleaning solution comprises water, an alkaline substance, a cosolvent and a first surfactant; the second cleaning solution comprises water, an acidic substance, a chelating agent and a second surfactant; the first cleaning device is used for cleaning the base material by adopting a first cleaning solution, and the second cleaning device is used for cleaning the base material by adopting a second cleaning solution.
14. The cleaning apparatus of claim 13, further comprising:
a third cleaning device;
a drying device;
the third cleaning device is used for cleaning the base material cleaned by the first cleaning device or the third cleaning device is used for cleaning the base material cleaned by the second cleaning device;
the drying device is used for drying the base material cleaned by the third cleaning device.
15. A substrate cleaned by the cleaning method as claimed in any one of claims 1 to 12, the substrate having a surface containing an oily soil area of less than 1mm2。
16. A substrate cleaned by the cleaning method of any one of claims 1 to 12, the surface of the substrate containing a concentration of metal ions of less than 1000 ppm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910767736.4A CN112410797A (en) | 2019-08-20 | 2019-08-20 | Cleaning method, cleaning apparatus and cleaned substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910767736.4A CN112410797A (en) | 2019-08-20 | 2019-08-20 | Cleaning method, cleaning apparatus and cleaned substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112410797A true CN112410797A (en) | 2021-02-26 |
Family
ID=74778960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910767736.4A Pending CN112410797A (en) | 2019-08-20 | 2019-08-20 | Cleaning method, cleaning apparatus and cleaned substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112410797A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1548582A (en) * | 2003-05-09 | 2004-11-24 | 上海白猫专用化学品有限公司 | Cleaner specially for cold rolled steel plate |
| CN103173777A (en) * | 2011-12-23 | 2013-06-26 | 赵春美 | Rust removing/inhibiting agent |
| CN105925995A (en) * | 2016-04-27 | 2016-09-07 | 芜湖真空科技有限公司 | High-brightness film coating device cleaning agent and preparation method thereof |
| CN106637249A (en) * | 2016-11-28 | 2017-05-10 | 东莞市联洲知识产权运营管理有限公司 | Special water-based cleaning agent for diamond lapping liquid and preparation method of special water-based cleaning agent |
| CN206328466U (en) * | 2016-11-24 | 2017-07-14 | 超微中程纳米科技（苏州）有限公司 | A kind of workpiece plated film pretreatment cleaning line |
| CN107513715A (en) * | 2017-06-01 | 2017-12-26 | 东莞市达诚显示材料有限公司 | A kind of cleaning agent for engine compression casting oil |
| CN109517676A (en) * | 2017-09-20 | 2019-03-26 | 蓝思科技（长沙）有限公司 | For cleaning the cleaning agent of glass anti-reflection film and the cleaning process of glass anti-reflection film |
-
2019
- 2019-08-20 CN CN201910767736.4A patent/CN112410797A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1548582A (en) * | 2003-05-09 | 2004-11-24 | 上海白猫专用化学品有限公司 | Cleaner specially for cold rolled steel plate |
| CN103173777A (en) * | 2011-12-23 | 2013-06-26 | 赵春美 | Rust removing/inhibiting agent |
| CN105925995A (en) * | 2016-04-27 | 2016-09-07 | 芜湖真空科技有限公司 | High-brightness film coating device cleaning agent and preparation method thereof |
| CN206328466U (en) * | 2016-11-24 | 2017-07-14 | 超微中程纳米科技（苏州）有限公司 | A kind of workpiece plated film pretreatment cleaning line |
| CN106637249A (en) * | 2016-11-28 | 2017-05-10 | 东莞市联洲知识产权运营管理有限公司 | Special water-based cleaning agent for diamond lapping liquid and preparation method of special water-based cleaning agent |
| CN107513715A (en) * | 2017-06-01 | 2017-12-26 | 东莞市达诚显示材料有限公司 | A kind of cleaning agent for engine compression casting oil |
| CN109517676A (en) * | 2017-09-20 | 2019-03-26 | 蓝思科技（长沙）有限公司 | For cleaning the cleaning agent of glass anti-reflection film and the cleaning process of glass anti-reflection film |
Non-Patent Citations (1)
| Title |
|---|
| 陈开勋等, 西北工业大学出版社 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6413923B2 (en) | Non-corrosive cleaning composition for removing plasma etching residues | |
| TWI390032B (en) | Cleaning compositions for microelectronics substrates | |
| US7879783B2 (en) | Cleaning composition for semiconductor substrates | |
| EP1066365B1 (en) | Acidic composition containing fluoride for removal of photoresists and etch residues | |
| KR100786610B1 (en) | Aqueous based residue removers comprising fluoride | |
| WO2003083582A1 (en) | Ph buffered compositions for cleaning semiconductor substrates | |
| CA2590325A1 (en) | Resist, barc and gap fill material stripping chemical and method | |
| CN110449398B (en) | Mask precision regeneration process and system thereof | |
| EP1264216B1 (en) | Method of reducing defects | |
| KR20030035830A (en) | Stripping composition | |
| KR20150087096A (en) | Process and composition for removing substances from substrates | |
| KR101485873B1 (en) | Microetching agent for copper, supplementary liquid for same, and manufacturing method for circuit board | |
| CN110597024B (en) | Stain-preventing photoresist stripper composition and method for manufacturing flat panel display substrate | |
| WO2012166902A1 (en) | SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-ĸ DIELECTRICS | |
| TW201805413A (en) | Cleaning solution and cleaning method for a semiconductor substrate or device | |
| CN112410797A (en) | Cleaning method, cleaning apparatus and cleaned substrate | |
| CN108473801B (en) | Non-aqueous stripping composition and method from substrate desquamation organic coating | |
| DE2717435B2 (en) | Process for removing a coating containing aluminum and chromium together with cobalt from a substrate made of a nickel-based alloy | |
| KR20030069266A (en) | Compostition of resist stripper | |
| CN108863104B (en) | Glass stripping agent and glass stripping process | |
| JPH1046393A (en) | Treatment of automobile body before electrodeposition | |
| JPS62182291A (en) | Method for washing aluminum | |
| CN115896793B (en) | Metal piece cleaning agent, preparation method and cleaning method | |
| JP4055923B2 (en) | ITO film removing composition and ITO film removing method using the same | |
| KR101888696B1 (en) | A composition for removing organic-inorganic hybrid alignment layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 450016 standard workshop No.7, Henan Zhengzhou export processing zone, 9th Street, Zhengzhou Economic Development Zone, Henan Province Applicant after: Fulian Precision Electronics (Zhengzhou) Co.,Ltd. Address before: 450016 standard workshop No.7, Henan Zhengzhou export processing zone, 9th Street, Zhengzhou Economic Development Zone, Henan Province Applicant before: Futaihua precision electronics (Zhengzhou) Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210226 |
|
| RJ01 | Rejection of invention patent application after publication |