CN112408316A - Preparation method of double-sided super-surface structure - Google Patents
Preparation method of double-sided super-surface structure Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00603—Aligning features and geometries on both sides of a substrate, e.g. when double side etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Abstract
The invention provides a preparation method of a double-sided super-surface structure, which comprises the following steps: providing a first photoetching plate and a second photoetching plate which are marked in a mirror image relationship, wherein the marks have the functions of positive and negative alignment, positive and negative offset error measurement and alignment of the next process step; providing a substrate, and respectively transferring the patterns marked in a mirror image relationship to two sides of the substrate to obtain a first substrate sample; screening out a first substrate sample with the offset error within a required range to obtain a qualified first substrate sample; and placing the qualified first substrate sample into the photoetching equipment used in the next step, identifying a mark with the alignment function of the next process step on the qualified first substrate sample, transferring the pattern layout of the double-sided super-surface structure to the front side and the back side of the qualified first substrate sample respectively to obtain a second substrate sample, and etching to obtain the double-sided super-surface structure. By adopting the method, the high-precision aligned double-sided super-surface structure can be successfully manufactured, so that the performance of the double-sided super-surface structure is improved.
Description
Technical Field
The invention relates to the field of micro-nano optics and optical imaging, in particular to a preparation method of a double-sided super-surface structure, which aims to realize high-precision alignment of the double-sided super-surface structure.
Background
In recent years, a micro-nano structured super surface has been a new method for controlling light by forming a sub-wavelength structure on a plane, and the micro-nano structured super surface means that a sub-wavelength optical scattering structure forms a two-dimensional array on an interface, has a special electromagnetic characteristic and an excellent interface manipulation capability, can locally change the amplitude, polarization and phase of incident light, is small in volume and light in weight, and can realize a compact optical structure, and thus has attracted attention.
The prior art and the problems thereof are illustrated below by taking an application of the super surface, a super surface lens, as an example. As shown in fig. 1 and 2, a schematic diagram of a single-sided super-surface lens is shown, including: SiO 22 Substrate 101 in SiO2The Si nano-pillar array 102 formed on the substrate 101, the material of the substrate 101 is not limited to SiO according to different requirements2The substrate, may also be other desired semiconductor materials, such as: si, Al2O3Etc., the Si nanopillar array 102 is not limited to the shape shown in fig. 1 and 2, and may be various super-surface patterns, such as: elliptic cylinder, cuboid, irregular figure etc. and the material of nano-pillar array 102 is also not limited to Si, can also be other required materials, such as: SiO 22，TiO2SiN, metals, etc.; as shown in fig. 3, a schematic diagram of a double-sided super-surface lens is shown, comprising: SiO 22 A substrate 103; in SiO2 Si nanopillar arrays 104 formed on both sides of the substrate 103; fig. 1 is a schematic diagram of a parallel light incident single-sided super-surface lens, fig. 2 is a schematic diagram of an oblique incident single-sided super-surface lens, and fig. 3 is a schematic diagram of a parallel and oblique incident double-sided super-surface lens.
In the example of FIG. 1, a beam of parallel light passes through SiO in sequence2The substrate 101 and the Si nano-pillar array 102 are focused on a focal plane, and a complete light spot is formed on the focal plane. In the example of FIG. 2, obliquely incident light passes through SiO in sequence2The substrate 101 and the Si nano-pillar array 102 form a defective light spot on the focal plane, i.e.The single-sided super-surface lens has aberration during oblique incidence, and cannot meet imaging at a large angle of view. In the example of FIG. 3, parallel-incident and oblique-incident light passes through the Si nanopillar array 104, SiO in sequence2The substrate 103 forms a complete light spot on a focal plane respectively, so that the aberration problem existing in the oblique incidence of the single-sided super-surface lens can be well solved, and the imaging with a large visual angle can be realized. Therefore, double-sided super-surface structures are receiving more and more attention.
Because the minimum line width of most super-surface structures is in the order of hundred nanometers, and the minimum line width of the double-sided photoetching machine is in the order of micrometers (such as 2 micrometers), the double-sided photoetching machine cannot be directly used for positive and negative alignment under the influence of the minimum line width of the double-sided photoetching machine, and meanwhile, most super-surface structure substrates are opaque, so that high-precision alignment and alignment precision measurement of the double-sided super-surface structures cannot be realized.
Therefore, for the super-surface structure with double-sided requirements, the preparation method of the double-sided super-surface structure with high-precision alignment is necessary.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a method for preparing a double-sided super-surface structure, which is used to solve the problem of poor alignment accuracy of patterns on both sides of the formed double-sided super-surface structure due to the limitations of process line width, material opacity, etc. in the preparation of the double-sided super-surface structure in the prior art.
To achieve the above and other related objects, the present invention provides a method for preparing a double-sided super-surface structure, the method comprising:
providing a first photoetching plate and a second photoetching plate, wherein the first photoetching plate is provided with a first mark, the second photoetching plate is provided with a second mark, the first mark and the second mark are in a mirror image relationship, and the first mark and the second mark have a positive and negative alignment function, a positive and negative offset error measurement function and a next process step alignment function;
providing a substrate, and transferring the pattern of the first mark on the first photoetching plate and the pattern of the second mark on the second photoetching plate to the front side and the back side of the substrate respectively in a mode of evaporating or sputtering metal to obtain a first substrate sample;
screening out the first substrate sample with the offset error within a required range according to the offset error measuring function of the first mark and the second mark to obtain a qualified first substrate sample;
providing a double-sided super-surface structure pattern layout, placing the qualified first substrate sample into a photoetching device used in the next step, adopting the photoetching device to identify the first mark and the second mark which have the alignment function of the next process step on the qualified first substrate sample, and respectively transferring the double-sided super-surface structure pattern layout to the front side and the back side of the qualified first substrate sample to obtain a second substrate sample;
and etching the front side and the back side of the second substrate sample by adopting an etching process to obtain a double-sided super-surface structure.
Optionally, the first mark and the second mark respectively include a positive and negative alignment mark, a positive and negative offset error measurement mark, and a next process step alignment mark; the positive and negative alignment mark realizes a positive and negative alignment function, the positive and negative offset error measurement mark realizes a positive and negative offset error measurement function, and the next process step alignment mark realizes a next process step alignment function.
Optionally, the positive and negative alignment marks include a coarse positive and negative alignment mark and a high-precision positive and negative alignment mark, and the positive and negative offset error measurement mark includes an overlay mark.
Optionally, the shape of the high-precision positive and negative alignment mark comprises one single mark type or more than two composite mark types in a group consisting of a cross mark type, a comb mark type, an overlay mark type and a ring mark type; the shape of the positive and negative offset error measurement mark comprises a single mark type or more than two composite mark types in a group consisting of a cross mark type, a comb mark type, an overlay mark type and a circular mark type.
Optionally, the material of the substrate comprises silicon, silicon dioxide, gallium nitride, germanium or aluminum oxide.
The invention also provides another preparation method of the double-sided super-surface structure, which comprises the following steps:
providing a first photoetching plate and a second photoetching plate, wherein the first photoetching plate is provided with a first mark, the second photoetching plate is provided with a second mark, the first mark and the second mark are in a mirror image relationship, and the first mark and the second mark have a positive and negative alignment function, a positive and negative offset error measurement function, a next process step alignment function and a super-surface structure alignment measurement reference function;
providing a substrate, and transferring the pattern of the first mark on the first photoetching plate and the pattern of the second mark on the second photoetching plate to the front side and the back side of the substrate respectively in a mode of evaporating or sputtering metal to obtain a first substrate sample;
screening the substrate sample with the offset error within a required range according to the offset error measuring function of the first mark and the second mark to obtain a qualified first substrate sample;
providing a double-sided super-surface structure pattern layout, placing the qualified first substrate sample into a photoetching device used in the next step, adopting the photoetching device to identify the first mark and the second mark which have the alignment function of the next process step on the qualified first substrate sample, and respectively transferring the double-sided super-surface structure pattern layout to the front side and the back side of the qualified first substrate sample to obtain a second substrate sample;
according to the super-surface structure alignment measurement reference function of the first mark and the second mark, measuring and calculating the relative position offset between the super-surface structure graph of each surface and the mark of the super-surface structure alignment measurement reference function, subtracting the relative position offsets of the two surfaces to obtain the relative position offset between the two-surface super-surface structures, and finally obtaining the alignment offset error of the two-surface super-surface structure by accumulating the offset error of the qualified first substrate sample and the relative position offset between the two-surface super-surface structures;
and etching the front side and the back side of the second substrate sample by adopting an etching process to obtain a double-sided super-surface structure.
Optionally, the first mark and the second mark respectively include a positive and negative alignment mark, a positive and negative offset error measurement mark, a next process step alignment mark, and a super-surface structure alignment measurement reference mark; the front and back alignment marks realize the front and back alignment function, the front and back offset error measurement marks realize the front and back offset error measurement function, the next process step alignment mark realizes the next process step alignment function, and the super-surface structure alignment measurement reference mark realizes the reference of super-surface structure alignment measurement; the super-surface structure alignment measurement reference mark is a square frame mark, and the super-surface structure graph layout is aligned inside the super-surface structure alignment measurement reference mark.
Optionally, measuring the position offset between four same positions of the edge of the super-surface structure pattern and the inner frame of the square frame mark by using an electron beam microscope to obtain two position offsets d1 and d2 in the vertical direction and two position offsets d3 and d4 in the horizontal direction; the relative position deviation deltax in the horizontal direction and the relative position deviation deltay in the vertical direction between the super surface structure pattern of each face and the mark of the super surface structure alignment measurement reference function are obtained by (d1-d2) ÷ 2 and (d3-d4) ÷ 2.
The invention also provides a preparation method of the double-sided super-surface structure, which comprises the following steps:
providing a first photoetching plate and a second photoetching plate, wherein the first photoetching plate is provided with a first mark, the second photoetching plate is provided with a second mark, the first mark and the second mark are in a mirror image relationship, and the first mark and the second mark have a positive and negative alignment function, a positive and negative offset error measurement function and a next process step alignment function;
providing a substrate, and transferring the pattern of the first mark on the first photoetching plate and the pattern of the second mark on the second photoetching plate to the front side and the back side of the substrate respectively in a mode of evaporating or sputtering metal to obtain a first substrate sample;
screening the substrate sample with the offset error within a required range according to the offset error measuring function of the first mark and the second mark to obtain a qualified first substrate sample;
providing a double-sided super-surface structure pattern layout, arranging a super-surface structure alignment measurement reference mark at a vacant position with the same mirror image of the double-sided super-surface structure pattern layout, putting the qualified first substrate sample into a photoetching device used in the next step, identifying the first mark and the second mark with the alignment function of the next process step on the qualified first substrate sample by adopting the photoetching device, and respectively transferring the double-sided super-surface structure pattern layout to the front side and the back side of the qualified first substrate sample to obtain a second substrate sample;
directly measuring according to the mirrored super-surface structure alignment measurement reference mark to obtain the alignment offset error of the double-sided super-surface structure;
and etching the front side and the back side of the second substrate sample by adopting an etching process to obtain a double-sided super-surface structure.
Optionally, the shape of the super-surface structure alignment measurement reference mark includes one single mark type or more than two composite mark types in a group consisting of a cross mark type, a comb mark type, an overlay mark type and a ring mark type.
As mentioned above, the double-sided super-surface structure prepared by the preparation method has high precision; in addition, the alignment precision of the double-sided super-surface structure can be measured and quantified; and finally, the method for measuring and quantifying the alignment precision of the double-sided super-surface structure is simple and easy to operate.
Drawings
Fig. 1 is a schematic diagram of a single-sided super-surface structure focusing a horizontal incident plane electromagnetic wave in the prior art.
Fig. 2 is a schematic diagram of a single-sided super-surface structure focusing an oblique incident plane electromagnetic wave in the prior art.
FIG. 3 is a schematic diagram of a double-sided super-surface structure focusing horizontal and oblique incident electromagnetic waves in the prior art.
Fig. 4 is a schematic diagram illustrating a first mark design on a first photolithography plate in a method for fabricating a double-sided super-surface structure according to a first embodiment of the invention.
Fig. 5 is a schematic diagram illustrating a second mark design on a second photolithography plate in the method for manufacturing a double-sided super-surface structure according to the first embodiment of the invention.
Fig. 6 is a schematic structural diagram illustrating an overall effect of the alignment of the first mark on the first photolithography plate and the second mark on the second photolithography plate in the method for manufacturing the double-sided super-surface structure according to the first embodiment of the present invention.
Fig. 7 is a schematic view illustrating alignment measurement reference marks of a super-surface structure in a method for manufacturing a double-sided super-surface structure according to a second embodiment of the present invention.
Fig. 8 is a schematic structural diagram illustrating an overall effect of the alignment of the first mark on the first photolithography plate and the second mark on the second photolithography plate in the method for manufacturing the double-sided super-surface structure according to the second embodiment of the present invention.
Fig. 9 is a schematic diagram showing relative positions of a super-surface structure pattern and a super-surface structure alignment measurement reference mark in the method for manufacturing a double-sided super-surface structure according to the second embodiment of the present invention.
Fig. 10 shows an enlarged view of fig. 9 at the dashed box a 1.
Fig. 11 is an enlarged view of fig. 10 at a dotted line frame B.
Fig. 12 is a schematic layout view of a super-surface structure in the method for manufacturing a double-sided super-surface structure according to the third embodiment of the present invention.
Description of the element reference numerals
101、103 SiO2Substrate
102. 104 Si nano-pillar array
10 first mark
20 second mark
11. 21 front and back alignment mark
110. 210 coarse positive and negative alignment mark
111. 211 high precision positive and negative alignment mark
12. 22 positive and negative offset error measurement mark
13. 23 alignment mark for next process step
14. 24 super surface structure alignment measurement reference mark
3 super surface structure pattern
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 4 to 12. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
The embodiment provides a preparation method of a double-sided super-surface structure, which comprises the following steps:
as shown in fig. 4 to 6, step S1 is first performed to provide a first photolithography mask and a second photolithography mask, where the first photolithography mask has a first mark 10 (as shown in fig. 4), the second photolithography mask has a second mark 20 (as shown in fig. 5), the first mark 10 and the second mark 20 are in mirror image relationship, and the first mark 10 and the second mark 20 have a positive and negative alignment function, a positive and negative offset error measurement function, and a next process step alignment function.
Here, the first mark 10 and the second mark 20 may have functions other than the above-described functions, and may be specifically set according to actual needs.
The first mark 10 and the second mark 20 may be provided with a plurality of functions for one mark, or may be provided with one function for each mark, and the pattern of the marks may be designed arbitrarily according to the process or the precision, as long as the subsequent microscope can observe the marks.
As shown in fig. 4 and 5, the first mark 10 and the second mark 20 include positive and negative alignment marks 11 and 21, positive and negative offset measurement marks 12 and 22, and alignment marks 13 and 23 of the next process step, respectively; the positive and negative alignment marks 11 and 21 realize the positive and negative alignment function, the positive and negative offset error measurement marks 12 and 22 realize the positive and negative offset error measurement function, and the alignment marks 13 and 23 in the next process step realize the alignment function in the next process step. To further improve the front-to-back alignment accuracy, the front-to-back alignment marks 11, 21 include coarse front-to-back alignment marks 110, 210 and high-accuracy front-to-back alignment marks 111, 211. It should be noted here that the high-precision forward/reverse alignment marks 111 and 211 and the forward/reverse offset error measurement marks 12 and 22 have great flexibility in design, and the shape thereof may be a single mark type such as a cross mark type, a comb mark type, an overlay mark type, or a circular mark type, or may be a composite mark type in which single mark types are combined.
As shown in fig. 4 and 5, in this embodiment, the positive and negative offset error measurement marks 12 and 22 are selected as overlay marks, and the line widths of the positive and negative overlay marks are designed to have a difference a, so that the overlay mark with a narrower line width (as shown in fig. 5) is sleeved in the overlay mark with a wider line width, and a sample with a double-sided alignment accuracy smaller than 1/2a can be screened under a microscope.
The alignment marks 13 and 23 in the next process step have great flexibility in design, and the shape thereof may be a single mark type of an existing cross mark type, a comb mark type, an overlay mark type, or a ring mark type, or a composite mark type formed by combining single mark types, as shown in fig. 4 and 5, in this embodiment, the alignment marks 13 and 23 in the next process step are selected to be a cross mark type suitable for EBL (electron beam exposure). In addition, the alignment marks 13 and 23 of the next process step are not limited to the positions near the front and back alignment marks 11 and 21 and the front and back offset error measurement marks 12 and 22 shown in fig. 4 and 5, and may be disposed at any suitable positions on the first and second photolithography masks according to practical situations, and are not limited herein. After the alignment and the alignment of the front side and the back side, the complete marks of the front side and the back side are as shown in fig. 6, and at this time, the high-precision samples are screened out according to the measurement marks 12 and 22 of the front-back deviation error, which is the key for the alignment and the measurement of the subsequent double-sided super-surface structure.
Then, step S2 is performed to provide a substrate, and the pattern of the first mark 10 on the first photolithography mask and the pattern of the second mark 20 on the second photolithography mask are transferred to the front and back surfaces of the substrate by using a metal evaporation or sputtering method, so as to obtain a first substrate sample.
By way of example, the substrate is not limited to a material, and may be any suitable material such as silicon, silicon dioxide, gallium oxide, germanium, or aluminum oxide. In this embodiment, the material of the substrate is selected to be silicon.
This step is described in detail here taking the substrate as a silicon substrate as an example: after completing the plate making of the first and second photolithography masks in step S1, performing photolithography and development on one surface of the silicon substrate using one of the photolithography masks, for example, the first photolithography mask, and evaporating a gold layer with a thickness of about 20nm by electron beam evaporation, and after the evaporation, performing stripping and cleaning to obtain a clean sample with a structure of the first mark 10; then, the above steps are carried out on the other side of the silicon substrate to obtain a clean sample with the structure of the second mark 20, so that the pattern of the first mark 10 and the pattern of the second mark 20 are transferred on the two sides of the silicon substrate.
Next, in step S3, the first substrate sample with the offset error within the required range is screened out according to the offset error measurement function of the first mark 10 and the second mark 20, so as to obtain a qualified first substrate sample.
This step is described in detail here taking the substrate as a silicon substrate as an example: because the silicon substrate is opaque under a conventional microscope, the reverse side graph of the silicon substrate cannot be observed, and the silicon substrate is transparent and the metal is opaque under an infrared microscope, the gold material layer marks on the front side and the back side of the silicon substrate can be clearly observed under the infrared microscope. For example, the positive and negative offset error measurement marks 12 and 22 are selected as overlay marks, when a photolithography mask is designed, the line width difference a between the positive and negative overlay marks is designed, and the offset error of the positive and negative overlay marks can be determined to be less than 1/2a by screening a first substrate sample in which the overlay mark with a narrower line width is nested in the overlay mark with a wider line width.
And step S4 is carried out, a double-sided super-surface structure graph layout is provided, the qualified first substrate sample is placed into the photoetching equipment used in the next step, the photoetching equipment is adopted to identify the first mark 10 and the second mark 20 which have the aligning function of the next process step on the qualified first substrate sample, and the double-sided super-surface structure graph layout is respectively transferred to the front side and the back side of the qualified first substrate sample, so that a second substrate sample is obtained.
This step is described in detail here by taking the EBL process as an example: after step S3 is finished, the qualified first substrate sample is placed in the EBL lithography apparatus used in the next step, the alignment mark of the next process step on one surface is identified first, and different marks and patterns thereof are selected according to different lithography apparatuses, in this embodiment, the EBL lithography apparatus is selected, and the cross-shaped mark is selected as the alignment mark; then, electron beam lithography and development are adopted, a chromium layer with the evaporation thickness of about 20nm is used as a hard mask layer in an electron beam evaporation mode, and after stripping and cleaning are completed, one side of a pattern in the double-sided super-surface structure pattern layout is transferred to the qualified first substrate sample; and then, the steps are carried out on the other side of the qualified first substrate sample, so that the other side of the graph in the double-sided super-surface structure graph layout is transferred to the qualified first substrate sample, and the double-sided super-surface structure graph layout is transferred to the front side and the back side of the qualified first substrate sample.
And finally, step S5 is carried out, the front side and the back side of the second substrate sample are etched by adopting an etching process, and the double-sided super-surface structure is obtained.
It should be noted here that when one side of the second substrate sample is subjected to an etching process, the other side of the second substrate sample is protected from the pattern.
By adopting the preparation method of the double-sided super-surface structure, the high-precision aligned double-sided super-surface structure can be successfully manufactured, so that the performance of the double-sided super-surface structure is improved.
Example two
The present embodiment provides a method for preparing a double-sided super-surface structure, which is substantially the same as the first embodiment except that: the first mark 10 on the first reticle and the second mark 20 on the second reticle provided in step S1 further have a super-surface structure alignment measurement reference function; after obtaining the second substrate sample, the alignment offset error of the double-sided super-surface structure can be obtained according to the mark of the super-surface structure alignment measurement reference function, specifically: according to the super-surface structure alignment measurement reference function of the first mark 10 and the second mark 20, the relative position offset between the super-surface structure graph of each surface and the mark of the super-surface structure alignment measurement reference function is measured and calculated, then the relative position offset between the double-sided super-surface structures is obtained by subtracting the relative position offset of the two surfaces, and finally the alignment offset error of the double-sided super-surface structure is obtained by accumulating the offset error of the qualified first substrate sample and the relative position offset between the double-sided super-surface structures.
As shown in fig. 7, as an example, the first mark 10 on the first reticle and the second mark 20 on the second reticle are provided with super-surface structure alignment measurement reference function marks 14 and 24.
As shown in fig. 7 to 9, the measurement and calculation of the alignment deviation error of the double-sided super-surface structure will be described below by taking the super-surface structure pattern 3 with a diameter of about 500 μm, the positive and negative deviation error measurement marks 12 and 22 as overlay type marks, and the super-surface structure alignment measurement reference function marks 14 and 24 as square frames with a side length slightly larger than the diameter of the super-surface structure pattern 3 as an example: as shown in fig. 9, the electron beam microscope is used to measure the position deviation between the four same positions (shown as the dotted line boxes a1, a2, A3 and a4 in the figure) of the edge of the graph of the super-surface structure on one side and the inner frame marked by the square frame (shown as fig. 11), so as to obtain two position deviations d1 and d2 in the vertical direction and two position deviations d3 and d4 in the horizontal direction; obtaining a relative position deviation delta x1 in the horizontal direction and a relative position deviation delta y1 in the vertical direction between the super-surface structure pattern 3 of the surface and the super-surface structure alignment measurement reference function mark 14 through delta x ═ 2 (d1-d2) ÷ 2 and delta y ═ 2 (d3-d4) ÷ 2, and similarly obtaining a relative position deviation delta x2 in the horizontal direction and a relative position deviation delta y2 in the vertical direction between the super-surface structure pattern 3 of the other surface and the super-surface structure alignment measurement reference function mark 24; subtracting the relative position deviation of the two surfaces to obtain the relative position deviation delta x 1-delta x2 and delta y 1-delta y2 between the two-surface super-surface structures in the horizontal direction and the vertical direction; and then, the offset error (for example, less than 1/2a) of the qualified first substrate sample is accumulated with the relative position offset between the double-sided super-surface structure in the horizontal direction and the vertical direction, so that the alignment offset error of the double-sided super-surface structure in the horizontal direction and the vertical direction is obtained.
By adopting the preparation method of the double-sided super-surface structure, not only can the high-precision aligned double-sided super-surface structure be successfully manufactured, but also the alignment precision of the double-sided super-surface structure can be measured and quantified.
EXAMPLE III
As shown in fig. 12, this embodiment provides a method for preparing a double-sided super-surface structure, which is substantially the same as the first embodiment except that: in step S4, in the double-sided super-surface structure graphic layout provided in this embodiment, a super-surface structure alignment measurement reference mark is further provided at a vacant position where the double-sided super-surface structure graphic layout has the same mirror image; after obtaining the second substrate sample, the alignment offset error of the double-sided super-surface structure can be directly measured according to the mirrored super-surface structure alignment measurement reference mark.
For example, the super-surface structure alignment measurement reference function marks 14 and 24 have great flexibility in design, and the shapes thereof may be single marks of the existing cross mark type, comb mark type, overlay mark type, or ring mark type, or may be composite marks formed by combining single marks (as shown in fig. 12), as long as the offset error can be distinguished or read under a microscope, for example, the super-surface structure alignment measurement reference function marks 14 and 24 may be selected to be overlay mark types, so that the line widths of the front and back overlay mark types are designed to have a difference b, and when the overlay mark with a narrower line width is overlaid in the overlay mark with a wider line width, the alignment offset error of the double-sided super-surface structure measured under the microscope may be less than 1/2 b. In this embodiment, the super-surface structure alignment measurement reference function marks 14 and 24 are selected to be of a composite mark type, so as to improve the measurement accuracy.
By adopting the preparation method of the double-sided super-surface structure, not only can the high-precision aligned double-sided super-surface structure be successfully manufactured, but also the alignment precision of the double-sided super-surface structure can be measured and quantified, and in addition, the measurement and quantification method of the alignment precision of the double-sided super-surface structure is simple and easy to operate.
In conclusion, the invention provides a preparation method of the double-sided super-surface structure, and the double-sided super-surface structure prepared by the preparation method has high precision; in addition, the alignment precision of the double-sided super-surface structure can be measured and quantified; and finally, the method for measuring and quantifying the alignment precision of the double-sided super-surface structure is simple and easy to operate. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A preparation method of a double-sided super-surface structure is characterized by comprising the following steps:
providing a first photoetching plate and a second photoetching plate, wherein the first photoetching plate is provided with a first mark, the second photoetching plate is provided with a second mark, the first mark and the second mark are in a mirror image relationship, and the first mark and the second mark have a positive and negative alignment function, a positive and negative offset error measurement function and a next process step alignment function;
providing a substrate, and transferring the pattern of the first mark on the first photoetching plate and the pattern of the second mark on the second photoetching plate to the front side and the back side of the substrate respectively in a mode of evaporating or sputtering metal to obtain a first substrate sample;
screening out the first substrate sample with the offset error within a required range according to the offset error measuring function of the first mark and the second mark to obtain a qualified first substrate sample;
providing a double-sided super-surface structure pattern layout, placing the qualified first substrate sample into a photoetching device used in the next step, adopting the photoetching device to identify the first mark and the second mark which have the alignment function of the next process step on the qualified first substrate sample, and respectively transferring the double-sided super-surface structure pattern layout to the front side and the back side of the qualified first substrate sample to obtain a second substrate sample;
and etching the front side and the back side of the second substrate sample by adopting an etching process to obtain a double-sided super-surface structure.
2. The method for preparing a double-sided super-surface structure according to claim 1, wherein: the first mark and the second mark respectively comprise a positive and negative alignment mark, a positive and negative offset error measurement mark and a next process step alignment mark; the positive and negative alignment mark realizes a positive and negative alignment function, the positive and negative offset error measurement mark realizes a positive and negative offset error measurement function, and the next process step alignment mark realizes a next process step alignment function.
3. The method of manufacturing a double-sided super-surface structure according to claim 2, wherein: the positive and negative alignment marks comprise a coarse positive and negative alignment mark and a high-precision positive and negative alignment mark, and the positive and negative offset error measurement mark comprises an overlay mark.
4. The method of manufacturing a double-sided super-surface structure according to claim 3, wherein: the shape of the high-precision positive and negative alignment mark comprises a single mark type or more than two composite mark types in a group consisting of a cross mark type, a comb mark type, an overlay mark type and a circular mark type; the shape of the positive and negative offset error measurement mark comprises a single mark type or more than two composite mark types in a group consisting of a cross mark type, a comb mark type, an overlay mark type and a circular mark type.
5. The method for preparing a double-sided super-surface structure according to claim 1, wherein: the material of the substrate comprises silicon, silicon dioxide, gallium nitride, germanium or aluminum oxide.
6. A preparation method of a double-sided super-surface structure is characterized by comprising the following steps:
providing a first photoetching plate and a second photoetching plate, wherein the first photoetching plate is provided with a first mark, the second photoetching plate is provided with a second mark, the first mark and the second mark are in a mirror image relationship, and the first mark and the second mark have a positive and negative alignment function, a positive and negative offset error measurement function, a next process step alignment function and a super-surface structure alignment measurement reference function;
providing a substrate, and transferring the pattern of the first mark on the first photoetching plate and the pattern of the second mark on the second photoetching plate to the front side and the back side of the substrate respectively in a mode of evaporating or sputtering metal to obtain a first substrate sample;
screening the substrate sample with the offset error within a required range according to the offset error measuring function of the first mark and the second mark to obtain a qualified first substrate sample;
providing a double-sided super-surface structure pattern layout, placing the qualified first substrate sample into a photoetching device used in the next step, adopting the photoetching device to identify the first mark and the second mark which have the alignment function of the next process step on the qualified first substrate sample, and respectively transferring the double-sided super-surface structure pattern layout to the front side and the back side of the qualified first substrate sample to obtain a second substrate sample;
according to the super-surface structure alignment measurement reference function of the first mark and the second mark, measuring and calculating the relative position offset between the super-surface structure graph of each surface and the mark of the super-surface structure alignment measurement reference function, subtracting the relative position offsets of the two surfaces to obtain the relative position offset between the two-surface super-surface structures, and finally obtaining the alignment offset error of the two-surface super-surface structure by accumulating the offset error of the qualified first substrate sample and the relative position offset between the two-surface super-surface structures;
and etching the front side and the back side of the second substrate sample by adopting an etching process to obtain a double-sided super-surface structure.
7. The method for preparing a double-sided super-surface structure according to claim 6, wherein: the first mark and the second mark respectively comprise a positive and negative alignment mark, a positive and negative offset error measurement mark, an alignment mark in the next process step and a super-surface structure alignment measurement reference mark; the front and back alignment marks realize the front and back alignment function, the front and back offset error measurement marks realize the front and back offset error measurement function, the next process step alignment mark realizes the next process step alignment function, and the super-surface structure alignment measurement reference mark realizes the reference of super-surface structure alignment measurement; the super-surface structure alignment measurement reference mark is a square frame mark, and the super-surface structure graph layout is aligned inside the super-surface structure alignment measurement reference mark.
8. The method of manufacturing a double-sided super-surface structure according to claim 7, wherein: measuring the position deviation between four same positions of the edge of the super-surface structure graph and the inner frame marked by the square frame by using an electron beam microscope to obtain two position deviations d1 and d2 in the vertical direction and two position deviations d3 and d4 in the horizontal direction; the relative position deviation deltax in the horizontal direction and the relative position deviation deltay in the vertical direction between the super surface structure pattern of each face and the mark of the super surface structure alignment measurement reference function are obtained by (d1-d2) ÷ 2 and (d3-d4) ÷ 2.
9. A preparation method of a double-sided super-surface structure is characterized by comprising the following steps:
providing a first photoetching plate and a second photoetching plate, wherein the first photoetching plate is provided with a first mark, the second photoetching plate is provided with a second mark, the first mark and the second mark are in a mirror image relationship, and the first mark and the second mark have a positive and negative alignment function, a positive and negative offset error measurement function and a next process step alignment function;
providing a substrate, and transferring the pattern of the first mark on the first photoetching plate and the pattern of the second mark on the second photoetching plate to the front side and the back side of the substrate respectively in a mode of evaporating or sputtering metal to obtain a first substrate sample;
screening the substrate sample with the offset error within a required range according to the offset error measuring function of the first mark and the second mark to obtain a qualified first substrate sample;
providing a double-sided super-surface structure pattern layout, arranging a super-surface structure alignment measurement reference mark at a vacant position with the same mirror image of the double-sided super-surface structure pattern layout, putting the qualified first substrate sample into a photoetching device used in the next step, identifying the first mark and the second mark with the alignment function of the next process step on the qualified first substrate sample by adopting the photoetching device, and respectively transferring the double-sided super-surface structure pattern layout to the front side and the back side of the qualified first substrate sample to obtain a second substrate sample;
directly measuring according to the mirrored super-surface structure alignment measurement reference mark to obtain the alignment offset error of the double-sided super-surface structure;
and etching the front side and the back side of the second substrate sample by adopting an etching process to obtain a double-sided super-surface structure.
10. The method of making a double-sided super-surface structure according to claim 9, wherein: the shape of the super-surface structure alignment measurement reference mark comprises a single mark type or more than two composite mark types in a group consisting of a cross mark type, a comb mark type, an alignment mark type and a circular mark type.
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