CN112394622A - Low-etching-rate developer composition and preparation method thereof - Google Patents
Low-etching-rate developer composition and preparation method thereof Download PDFInfo
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- CN112394622A CN112394622A CN202011027026.7A CN202011027026A CN112394622A CN 112394622 A CN112394622 A CN 112394622A CN 202011027026 A CN202011027026 A CN 202011027026A CN 112394622 A CN112394622 A CN 112394622A
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- developer composition
- nonionic surfactant
- metal salt
- alkali metal
- naphthalene sulfonate
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- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- -1 alkyl naphthalene sulfonate Chemical compound 0.000 claims abstract description 45
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 20
- 239000012498 ultrapure water Substances 0.000 claims abstract description 19
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 18
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 22
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 22
- 230000005484 gravity Effects 0.000 claims description 12
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 claims description 4
- 150000005846 sugar alcohols Polymers 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- 239000004111 Potassium silicate Substances 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 150000002191 fatty alcohols Chemical class 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910000028 potassium bicarbonate Inorganic materials 0.000 claims description 3
- 235000015497 potassium bicarbonate Nutrition 0.000 claims description 3
- 239000011736 potassium bicarbonate Substances 0.000 claims description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 3
- 235000011181 potassium carbonates Nutrition 0.000 claims description 3
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 claims description 3
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052913 potassium silicate Inorganic materials 0.000 claims description 3
- 235000019353 potassium silicate Nutrition 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 claims description 3
- 229940039790 sodium oxalate Drugs 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- 235000019794 sodium silicate Nutrition 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 18
- 238000005530 etching Methods 0.000 abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 10
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 239000006260 foam Substances 0.000 abstract description 4
- 239000006185 dispersion Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 5
- 229920001214 Polysorbate 60 Polymers 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 150000008052 alkyl sulfonates Chemical class 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 2
- 239000004147 Sorbitan trioleate Substances 0.000 description 2
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 235000019337 sorbitan trioleate Nutrition 0.000 description 2
- 229960000391 sorbitan trioleate Drugs 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- NTWSIWWJPQHFTO-AATRIKPKSA-N (2E)-3-methylhex-2-enoic acid Chemical compound CCC\C(C)=C\C(O)=O NTWSIWWJPQHFTO-AATRIKPKSA-N 0.000 description 1
- CUNWUEBNSZSNRX-RKGWDQTMSA-N (2r,3r,4r,5s)-hexane-1,2,3,4,5,6-hexol;(z)-octadec-9-enoic acid Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO.OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO.CCCCCCCC\C=C/CCCCCCCC(O)=O.CCCCCCCC\C=C/CCCCCCCC(O)=O.CCCCCCCC\C=C/CCCCCCCC(O)=O CUNWUEBNSZSNRX-RKGWDQTMSA-N 0.000 description 1
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- JOLVYUIAMRUBRK-UHFFFAOYSA-N 11',12',14',15'-Tetradehydro(Z,Z-)-3-(8-Pentadecenyl)phenol Natural products OC1=CC=CC(CCCCCCCC=CCC=CCC=C)=C1 JOLVYUIAMRUBRK-UHFFFAOYSA-N 0.000 description 1
- FHTGJZOULSYEOB-UHFFFAOYSA-N 2,6-di(butan-2-yl)phenol Chemical compound CCC(C)C1=CC=CC(C(C)CC)=C1O FHTGJZOULSYEOB-UHFFFAOYSA-N 0.000 description 1
- ABPYVNPDRFJZEU-UHFFFAOYSA-N 2-(2,2,2-triphenylethyl)phenol Chemical compound OC1=CC=CC=C1CC(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 ABPYVNPDRFJZEU-UHFFFAOYSA-N 0.000 description 1
- ANPZHJKLCJISQH-UHFFFAOYSA-N 2-(2,2-diphenylethyl)phenol Chemical compound OC1=CC=CC=C1CC(C=1C=CC=CC=1)C1=CC=CC=C1 ANPZHJKLCJISQH-UHFFFAOYSA-N 0.000 description 1
- DMAXMXPDVWTIRV-UHFFFAOYSA-N 2-(2-phenylethyl)phenol Chemical compound OC1=CC=CC=C1CCC1=CC=CC=C1 DMAXMXPDVWTIRV-UHFFFAOYSA-N 0.000 description 1
- NFAOATPOYUWEHM-UHFFFAOYSA-N 2-(6-methylheptyl)phenol Chemical compound CC(C)CCCCCC1=CC=CC=C1O NFAOATPOYUWEHM-UHFFFAOYSA-N 0.000 description 1
- CYEJMVLDXAUOPN-UHFFFAOYSA-N 2-dodecylphenol Chemical compound CCCCCCCCCCCCC1=CC=CC=C1O CYEJMVLDXAUOPN-UHFFFAOYSA-N 0.000 description 1
- YLKVIMNNMLKUGJ-UHFFFAOYSA-N 3-Delta8-pentadecenylphenol Natural products CCCCCCC=CCCCCCCCC1=CC=CC(O)=C1 YLKVIMNNMLKUGJ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- JOLVYUIAMRUBRK-UTOQUPLUSA-N Cardanol Chemical compound OC1=CC=CC(CCCCCCC\C=C/C\C=C/CC=C)=C1 JOLVYUIAMRUBRK-UTOQUPLUSA-N 0.000 description 1
- FAYVLNWNMNHXGA-UHFFFAOYSA-N Cardanoldiene Natural products CCCC=CCC=CCCCCCCCC1=CC=CC(O)=C1 FAYVLNWNMNHXGA-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- AQKOHYMKBUOXEB-RYNSOKOISA-N [(2R)-2-[(2R,3R,4S)-4-hydroxy-3-(16-methylheptadecanoyloxy)oxolan-2-yl]-2-(16-methylheptadecanoyloxy)ethyl] 16-methylheptadecanoate Chemical compound CC(C)CCCCCCCCCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCCCCCCCCCC(C)C)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCCCCCCCCCC(C)C AQKOHYMKBUOXEB-RYNSOKOISA-N 0.000 description 1
- IJCWFDPJFXGQBN-RYNSOKOISA-N [(2R)-2-[(2R,3R,4S)-4-hydroxy-3-octadecanoyloxyoxolan-2-yl]-2-octadecanoyloxyethyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCCCCCCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCCCCCCCCCCCC IJCWFDPJFXGQBN-RYNSOKOISA-N 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- PTFIPECGHSYQNR-UHFFFAOYSA-N cardanol Natural products CCCCCCCCCCCCCCCC1=CC=CC(O)=C1 PTFIPECGHSYQNR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- QBDSZLJBMIMQRS-UHFFFAOYSA-N p-Cumylphenol Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=CC=C1 QBDSZLJBMIMQRS-UHFFFAOYSA-N 0.000 description 1
- NKTOLZVEWDHZMU-UHFFFAOYSA-N p-cumyl phenol Natural products CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 1
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920000053 polysorbate 80 Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229940100515 sorbitan Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 229960005078 sorbitan sesquioleate Drugs 0.000 description 1
- 239000001589 sorbitan tristearate Substances 0.000 description 1
- 235000011078 sorbitan tristearate Nutrition 0.000 description 1
- 229960004129 sorbitan tristearate Drugs 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
- G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a low etching rate developer composition and a preparation method thereof, wherein the developer composition comprises alkyl naphthalene sulfonate, nonionic surfactant, alkali metal salt, high-purity water, 0.2-10% of alkyl naphthalene sulfonate, 0.01-10% of nonionic surfactant, 0.1-10% of alkali metal salt and 70-96.9% of high-purity water. The photoresist developing solution has the characteristics of low etching rate of a substrate material, no substrate corrosion in the developing process, high dispersion stability, less foam, large operation window, clear developed pattern, no residue of the photoresist, no substrate corrosion and the like.
Description
Technical Field
The invention relates to the field of functional microelectronic materials, in particular to a low-etching-rate developer composition and a preparation method thereof.
Background
A Photolithography (Photolithography) process is an important step in the manufacturing process of display panels and semiconductor devices. In TFT-LCD, TP, and semiconductor wafer processing, almost all pattern transfers are accomplished by photolithography. The photoetching process flow comprises pretreatment of a substrate, photoresist coating, prebaking, exposure, development, postbaking, etching or ion implantation, photoresist removal and the like. The substrate material is not only a glass substrate and a silicon wafer, but also other metal layers, dielectric layers and the like.
At present, the developing solutions used in the photolithography process are mainly TMHA and KOH developing solutions, which have strong corrosion performance on the substrate containing metal, such as Al metal layer, and TMAH and KOH developing solutions are not suitable for developing the substrate containing such a kind of substrate. Therefore, a developing solution having a low etching rate to a substrate is required.
Disclosure of Invention
The invention aims to solve the technical problem of a low-etching-rate developer composition and a preparation method thereof, and the developer composition is suitable for the developer composition in the photoetching process in the field of TFT-LCD, TP and semiconductors.
The invention is realized by the following technical scheme: a low etching rate developer composition comprises alkyl naphthalene sulfonate, nonionic surfactant, alkali metal salt, high purity water, 0.2-10% of alkyl naphthalene sulfonate, 0.01-10% of nonionic surfactant, 0.1-10% of alkali metal salt and 70-96.9% of high purity water.
Preferably, the specific gravity of the alkyl naphthalene sulfonate is 0.5-5%, the specific gravity of the nonionic surfactant is 0.05-5%, the specific gravity of the alkali metal salt is 0.2-8%, and the specific gravity of the high-purity water is 82-99.25%.
As a preferable technical scheme, the structural formula of the surfactant alkyl naphthalene sulfonate is shown in the specification, wherein M is one or more of Na, K, Mg, Al and Ca, R is straight-chain or branched alkane with the number of C atoms of 1-20, and the number of n is 1-5.
As a preferred technical scheme, the nonionic surfactant is one or more of long-chain fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether and polyalcohol polyoxyethylene ether series.
As a preferred technical scheme, the alkali metal salt is one or more of sodium carbonate, potassium carbonate, sodium oxalate, potassium oxalate, sodium bicarbonate, potassium bicarbonate, sodium silicate and potassium silicate.
As a preferred technical scheme, deionized water with the resistance value of more than 10m omega/cm is selected as the high-purity water.
A preparation method of a low-etching-rate developer composition specifically comprises the following steps:
firstly, adding 0.2 to 10 percent of alkyl naphthalene sulfonate, 0.01 to 10 percent of nonionic surfactant, 0.1 to 10 percent of alkali metal salt and 70 to 96.9 percent of high-purity water into a stirring container in sequence for stirring and dissolving;
secondly, controlling the heat release phenomenon of strong alkali in the dissolving process, and controlling the temperature below 50 ℃ in the whole dissolving process;
and thirdly, filtering the mixture by using a filter element of 0.1um after the mixture is completely dissolved.
The invention has the beneficial effects that: the low etching rate developing solution can be directly used or diluted for use. The developing solution of the invention is not particularly limited in the use process, and can adopt a soaking type or a spraying type.
The positive progress effects of the invention are as follows: the photoresist developing solution has the characteristics of low etching rate of a substrate material, no substrate corrosion in the developing process, high dispersion stability, less foam, large operation window, clear developed pattern, no residue of the photoresist, no substrate corrosion and the like.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
The invention relates to a low-etching-rate developing solution composition, which comprises 0.2-10% of alkyl naphthalene sulfonate, 0.01-10% of nonionic surfactant, 0.1-10% of alkali metal salt and 70-96.9% of high-purity water.
In this example, the specific gravity of the alkyl naphthalene sulfonate is 0.5 to 5%, the specific gravity of the nonionic surfactant is 0.05 to 5%, the specific gravity of the alkali metal salt is 0.2 to 8%, and the specific gravity of the high-purity water is 82 to 99.25%.
Wherein the nonionic surfactant is one or more of long-chain fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether and polyalcohol polyoxyethylene ether.
The structural formula of the surfactant alkyl naphthalene sulfonate is shown as
Wherein M is one or more of Na, K, Mg, Al and Ca, R is straight chain or branched chain alkane with the number of C atoms of 1-20, and the number of n is 1-5.
In this embodiment, the long-chain fatty alcohol-polyoxyethylene ether has the following structural formula:
preferred are polyoxyethylene lauryl ether, polyoxyethylene alkyl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyldodecyl ether, etc.; the structural formula of the alkylphenol polyoxyethylene is as follows:
preferred nonylphenol polyoxyethylene ether, octylphenol polyoxyethylene ether, phenethylphenol polyoxyethylene ether, diphenylethylphenol polyoxyethylene ether, triphenylethylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether, isooctylphenol polyoxyethylene ether, cardanol polyoxyethylene ether, di-sec-butylphenol polyoxyethylene ether, polyoctylphenol polyoxyethylene ether, p-cumylphenol polyoxyethylene ether and the like.
The structural formula of the polyalcohol polyoxyethylene ether is as follows: RO (CH 2O) nH in which n is a polymerization degree, preferably a glycerin fatty acid ester, propylene glycol fatty acid ester, sorbitan monostearate, sorbitan monooleate, sorbitan sesquioleate, sorbitan coco fatty acid, sorbitan monohexadecanoate, sorbitan tristearate, sorbitan trioleate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monohexadecanoate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan tristearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan triisostearate, polyoxyethylene sorbitan tetraoleate, etc. The nonionic surfactant and the alkyl naphthalene sulfonate have a synergistic effect and can enhance the stability of surface wetting and penetration effects.
In this embodiment, the alkali metal salt is one or more of sodium carbonate, potassium carbonate, sodium oxalate, potassium oxalate, sodium bicarbonate, potassium bicarbonate, sodium silicate, and potassium silicate, and the deionized water having an electric resistance value of greater than 10m Ω/cm is selected as the high-purity water.
In this embodiment, the preparation method of the low etching rate developer composition specifically includes the following steps:
(1) adding alkyl naphthalene sulfonate, nonionic surfactant, alkali metal salt, high purity water, 0.2-10% of alkyl naphthalene sulfonate, 0.01-10% of nonionic surfactant, 0.1-10% of alkali metal salt and 70-96.9% of high purity water into a stirring container in sequence, stirring and dissolving;
(2) the heat release phenomenon of strong alkali is controlled in the dissolving process, and the temperature in the whole dissolving process is controlled below 50 ℃;
(3) filtering with 0.1um filter element after completely dissolving.
Table 1 composition and content of the developers of examples and comparative examples:
table 1.
In order to further examine the wetting effect and the developing effect of the developer, the invention adopts the following technical means: 1. wetting effect, using HTYZL-H full-automatic tensiometer to measure the surface tension of the stock solution and diluent sample of the above examples and comparative examples; 2. the effect of the developing solution is as follows: spin-coating a negative color photoresist with a certain thickness on a glass substrate, and pre-baking at 120 ℃ for 80s in an oven. Then, exposure was performed using a pattern mask, and after completion of exposure, development was performed using the above-mentioned developer diluted by 20 times. After the development treatment, the resultant was washed with high-purity water, then dried with nitrogen gas, and hard-baked in an oven at 220 ℃. Observation was performed using an optical microscope and an electron microscope. The development effect was confirmed. The properties of the stock solution of the high-concentration developer and the development effect after dilution are shown in table 2;
table 2.
As can be seen from the above Table 2, the low etching rate developing solution of the present invention has a lower surface tension and an excellent developing effect as shown in examples 1 to 10. Compared with example 10, comparative example 1 has higher surface tension because it contains only potassium oxalate and does not contain alkyl sulfonate and non-surfactant, and has the phenomenon that the residue and the pattern have defects and are not clear after the development.
Comparative example 2 has a low surface tension before dilution because it does not contain a nonionic surfactant, but the surface tension after dilution is significantly increased, and there is a problem in that a clear pattern with high precision without residue cannot be obtained.
Comparative example 3, which contains no alkylsulfonate, has a high surface tension, and a clear pattern having high definition and no residue was similarly obtained.
In summary, the present invention is directed to a low etching rate developer solution for TFT-LCD, TP and semiconductor wafer processes, which comprises an alkyl sulfonate, a nonionic surfactant, an alkali metal salt and high purity water. The developing solution has the characteristics of low metal substrate etching rate, high surface wettability, less foam, large operation window, clear pattern after development, no photoresist residue and the like.
It should be understood that wt% in the present invention refers to mass percentage.
The invention has the beneficial effects that: the low etching rate developing solution can be directly used or diluted for use. The developing solution of the invention is not particularly limited in the use process, and can adopt a soaking type or a spraying type.
The positive progress effects of the invention are as follows: the photoresist developing solution has the characteristics of low etching rate of a substrate material, no substrate corrosion in the developing process, high dispersion stability, less foam, large operation window, clear developed pattern, no residue of the photoresist, no substrate corrosion and the like.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that are not thought of through the inventive work should be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope defined by the claims.
Claims (7)
1. A low etch rate developer composition, comprising: comprises alkyl naphthalene sulfonate, nonionic surfactant, alkali metal salt, high purity water, 0.2-10% of alkyl naphthalene sulfonate, 0.01-10% of nonionic surfactant, 0.1-10% of alkali metal salt and 70-96.9% of high purity water.
2. The low etch rate developer composition of claim 1, wherein: the specific gravity of the alkyl naphthalene sulfonate is 0.5-5%, the specific gravity of the nonionic surfactant is 0.05-5%, the specific gravity of the alkali metal salt is 0.2-8%, and the specific gravity of the high-purity water is 82-99.25%.
3. The low etch rate developer composition of claim 1, wherein: the structural formula of the surfactant alkyl naphthalene sulfonate is shown as
Wherein M is one or more of Na, K, Mg, Al and Ca, R is straight chain or branched chain alkane with the number of C atoms of 1-20, and the number of n is 1-5.
4. The low etch rate developer composition of claim 1, wherein: the nonionic surfactant is one or more of long-chain fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether and polyalcohol polyoxyethylene ether series.
5. The low etch rate developer composition of claim 1, wherein: the alkali metal salt is one or more of sodium carbonate, potassium carbonate, sodium oxalate, potassium oxalate, sodium bicarbonate, potassium bicarbonate, sodium silicate and potassium silicate.
6. The low etch rate developer composition of claim 1, wherein: deionized water with resistance value larger than 10m omega/cm is selected as the high-purity water.
7. A preparation method of a low-etching-rate developer composition is characterized by comprising the following steps:
firstly, adding 0.2 to 10 percent of alkyl naphthalene sulfonate, 0.01 to 10 percent of nonionic surfactant, 0.1 to 10 percent of alkali metal salt and 70 to 96.9 percent of high-purity water into a stirring container in sequence for stirring and dissolving;
secondly, controlling the heat release phenomenon of strong alkali in the dissolving process, and controlling the temperature below 50 ℃ in the whole dissolving process;
and thirdly, filtering the mixture by using a filter element of 0.1um after the mixture is completely dissolved.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532116A (en) * | 1992-01-13 | 1996-07-02 | Fuji Photo Film Co., Ltd. | Aqueous alkaline developing solution |
| CN101118391A (en) * | 2006-05-25 | 2008-02-06 | 富士胶片株式会社 | Alkaline developer for photosensitive resin, image forming method using the same |
| CN101770186A (en) * | 2008-12-30 | 2010-07-07 | 乐凯集团第二胶片厂 | Developer solution for positive lithoprinting plate |
| CN102053508A (en) * | 2010-11-09 | 2011-05-11 | 泰兴市东方实业公司 | Developer for positive thermosensitive CTP (Computer to Plate) |
| CN102722092A (en) * | 2012-06-06 | 2012-10-10 | 乐凯华光印刷科技有限公司 | Developing solution applicable to photo-polymerization type lithographic printing plate |
-
2020
- 2020-09-26 CN CN202011027026.7A patent/CN112394622A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532116A (en) * | 1992-01-13 | 1996-07-02 | Fuji Photo Film Co., Ltd. | Aqueous alkaline developing solution |
| CN101118391A (en) * | 2006-05-25 | 2008-02-06 | 富士胶片株式会社 | Alkaline developer for photosensitive resin, image forming method using the same |
| CN101770186A (en) * | 2008-12-30 | 2010-07-07 | 乐凯集团第二胶片厂 | Developer solution for positive lithoprinting plate |
| CN102053508A (en) * | 2010-11-09 | 2011-05-11 | 泰兴市东方实业公司 | Developer for positive thermosensitive CTP (Computer to Plate) |
| CN102722092A (en) * | 2012-06-06 | 2012-10-10 | 乐凯华光印刷科技有限公司 | Developing solution applicable to photo-polymerization type lithographic printing plate |
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