CN112391673A - Main heater for single crystal furnace - Google Patents

Main heater for single crystal furnace Download PDF

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Publication number
CN112391673A
CN112391673A CN202011412137.XA CN202011412137A CN112391673A CN 112391673 A CN112391673 A CN 112391673A CN 202011412137 A CN202011412137 A CN 202011412137A CN 112391673 A CN112391673 A CN 112391673A
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CN
China
Prior art keywords
heating
single crystal
main heater
heating area
crystal furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011412137.XA
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Chinese (zh)
Inventor
兰志勇
文勇
陈龑
段俊飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Baotou Meike Silicon Energy Co Ltd
Jiangsu Meike Solar Technology Co Ltd
Original Assignee
Baotou Meike Silicon Energy Co Ltd
Jiangsu Meike Solar Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Baotou Meike Silicon Energy Co Ltd, Jiangsu Meike Solar Technology Co Ltd filed Critical Baotou Meike Silicon Energy Co Ltd
Priority to CN202011412137.XA priority Critical patent/CN112391673A/en
Publication of CN112391673A publication Critical patent/CN112391673A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)

Abstract

The invention discloses a main heater for a single crystal furnace, which comprises a heating area and an electrode foot plate, wherein the electrode foot plate is arranged at the bottom end of the heating area, the heating area is of a cylindrical structure, heating grooves are alternately formed in the surface of the heating area along the axial direction from top to bottom, the heating area is formed by splicing four equally-divided heating sheets according to the circumference, the four heating sheets are connected in a matching way through connecting blocks and carbon-carbon bolts, and the splicing parts of the four heating sheets are fixedly connected by graphite glue; this main heater simple structure is formed by four lamella heating plate concatenations, and it is little to use raw and other materials size, workable, and the processing cost is low, and the installation is dismantled conveniently, solves graphite spare raw and other materials starvation and with high costs problem behind the single crystal thermal field grow.

Description

Main heater for single crystal furnace
Technical Field
The invention relates to a heater, in particular to a main heater for a single crystal furnace, and belongs to the photovoltaic manufacturing industry.
Background
Along with the use of a large amount of novel energy, the dependence of people on the traditional energy is gradually reduced, wherein the solar energy is widely applied to the modern society as an inexhaustible green energy, the environment is improved, and part of energy problems are solved. Among the uses of solar energy, photoelectric conversion is most widely used, and in photoelectric conversion, a large number of silicon cells are required, thereby leading to a large demand for photovoltaic grade single crystal silicon.
At present, the main equipment for producing monocrystalline silicon comprises a czochralski method single crystal furnace and a single crystal furnace thermal field, wherein the single crystal furnace thermal field generally comprises a pressure ring, a heat preservation cover, an upper heat preservation cylinder, a middle heat preservation cylinder, a lower heat preservation cylinder, a carbon crucible side, a crucible supporting rod, a crucible tray, an electrode, a heater, a guide cylinder, a graphite bolt and the like, a graphite main heater is adopted in the single crystal furnace thermal field at present to heat and melt raw materials in a quartz crucible, a common graphite main heater is an annular graphite and is uniformly grooved, and then an electrode foot plate is electrified and heated.
Two main heater processing modes are generally available in the industry, one main heater processing mode is high in cost and poor in interchangeability, and cannot be used for the second time; the other is that the heating area and the heater supporting legs are separately processed, the cost is slightly low, as shown in the figure 1-2, the heating area and the foot plates of the main heater are separately processed, the heating area and the foot plates are spliced and assembled and fixed by using carbon-carbon bolts, but the heating area of the heater is integrally formed, the size of the whole raw materials used by the heater is increased along with the increase of the size of a thermal field, and the raw materials are wasted; after the size of the thermal field is increased, massive graphite blanks in the industry are deficient, the size of raw materials is insufficient, the goods output of a heater is insufficient, the cost of elements is high directly, and the damage probability is high.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a main heater for a single crystal furnace, which has a simple structure, is formed by splicing four heating sheets, is small in size of used raw materials, easy to process, low in processing cost and convenient to mount and dismount, and solves the problems of raw material shortage and high cost of a graphite piece after a single crystal thermal field is enlarged.
In order to solve the technical problem, the invention provides a main heater for a single crystal furnace, which comprises a heating area and an electrode foot plate, wherein the electrode foot plate is arranged at the bottom end of the heating area, the heating area is of a cylindrical structure, heating grooves are alternately formed in the surface of the heating area along the axial direction from top to bottom, the heating area is formed by splicing four equally-divided heating sheets according to the circumference, the four heating sheets are connected in a matched mode through connecting blocks and carbon-carbon bolts, and the splicing positions of the four heating sheets are fixedly connected through graphite glue.
The technical scheme of the invention is further defined as follows:
furthermore, in the main heater for the single crystal furnace, the connecting block is arranged at the lower end of the splicing position of the two heating pieces.
In the main heater for the single crystal furnace, the two electrode foot plates are symmetrically arranged at the bottom end of the heating area.
In the main heater for the single crystal furnace, the four heating sheets are processed and manufactured by the same graphite blank.
The technical effect is that the electrical properties of the processing materials, particularly the resistance, are similar from the same material, and the uniformity of heating is utilized.
The invention has the beneficial effects that:
the structure of the existing heater is changed from the integral processing of a heating sheet and a foot plate part of a heating area into the separate processing of the heating area and the foot plate and the connection of the heating area and the foot plate through bolts, the processing and the use of raw materials are greatly reduced, meanwhile, the cost is reduced, and the existing heater adopting the assembly mode is used in the industry; the heating area part of the heater is divided into four-petal heating pieces, one petal is processed by using a smaller graphite blank (compared with the prior art that the graphite blank is used for processing an integral heating area, the middle circle is an integral, and the rest part is not used, each petal of the split type heating device is small in size, can be processed to a plurality of parts, saves materials), then four petals are spliced, and are assembled by matching bolts with graphite glue, the used raw materials are small in size, easy to process, low in processing cost and sufficient in raw material incoming, the current situation that large graphite blocks are deficient can be relieved, and meanwhile, the cost can be greatly reduced; the heater is formed by splicing, is convenient to mount and dismount, has good interchangeability, can be replaced in time when being partially broken, and can effectively prolong the service life of the heater.
Drawings
FIG. 1 is a prior art main heater for a single crystal furnace;
FIG. 2 is a schematic structural view of the heater of FIG. 1;
FIG. 3 is a schematic structural diagram of an embodiment of the present invention;
FIG. 4 is a schematic structural view of a single heat generating sheet in FIG. 3;
FIG. 5 is a schematic structural view of the connecting sheet in FIG. 3 when two heating sheets are connected;
FIG. 6 is another structural view of the connecting piece of FIG. 3;
in the figure: 1-heating area, 2-electrode foot plate, 3-heating piece, 4-connecting block and 5-carbon bolt.
Detailed Description
Example 1
The main heater for the single crystal furnace that this embodiment provided, the structure is as shown in fig. 3-6, including heating zone 1 and electrode sole 2, electrode sole 2 sets up in the bottom in heating zone 1, heating zone 1 is cylindric structure, heating tank has been seted up in turn from top to bottom along the axis direction on the surface in heating zone 1, heating zone 1 is enclosed to close the concatenation by the four lamellas of equalling partition heating plate 3 according to the circumference and forms, heating tank has been seted up in turn from top to bottom along the axis direction on the face of every lamella heating plate, four lamellas generate heat and connect through connecting block 4 and the cooperation of carbon bolt 5 between the heating plate 3, adjacent two generate heat and connect through connecting block and carbon bolt between the heating plate, 3 splice departments of four lamellas heating plate adopt graphite adhesive to connect fixedly.
In this embodiment, connecting block 4 sets up in the lower extreme of 3 concatenations departments of two lamella heating sheet, and every lamella heating sheet's lower extreme is fixed with the connecting block through two carbon bolt, and the connecting block is no longer than the lower edge in the district that generates heat, guarantees to splice 1 normal use in the district that generates heat of a cylindric structure.
In this embodiment, electrode sole 2 is two, sets up in the bottom of the piece 3 that generates heat symmetrically, and electrode sole 2 detachable installs in the bottom in the district that generates heat, and accessible bolt, connecting block are connected.
In the present embodiment, the four-petal heating sheet 3 is processed from the same graphite blank.
The heating area part of the heater is formed by splicing four heating sheets, so that the heating area is bonded by graphite glue, fixed by a carbon-carbon bolt and connected with a block, and assembled with an electrode foot plate into a whole; the single heating area is made of small-sized materials, wide in raw materials and easy to process, and the working cost is effectively reduced; one of the petals can be independently replaced when being damaged in the using process, and the loss of overall replacement caused by local damage of the integral heater is effectively solved.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.

Claims (4)

1. The utility model provides a main heater for single crystal growing furnace, includes heating zone (1) and electrode sole (2), electrode sole (2) set up in the bottom in heating zone (1), heating zone (1) is cylindric structure, heating zone (1) has seted up heating bath, its characterized in that along axis direction from top to bottom in turn on the surface: the heating area (1) is formed by splicing four equal-divided heating sheets (3) according to the circumference, the four heating sheets (3) are connected in a matching mode through connecting blocks (4) and carbon bolts (5), and the splicing positions of the heating sheets (3) are fixed in a graphite adhesive mode.
2. The main heater for a single crystal furnace as claimed in claim 1, wherein: the connecting block (4) is arranged at the lower end of the splicing part of the two heating sheets (3).
3. The main heater for a single crystal furnace as claimed in claim 1, wherein: the electrode foot plates (2) are two symmetrically arranged at the bottom end of the heating area (1).
4. The main heater for a single crystal furnace as claimed in claim 1, wherein: the four heating sheets (3) are processed by the same graphite blank.
CN202011412137.XA 2020-12-03 2020-12-03 Main heater for single crystal furnace Pending CN112391673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011412137.XA CN112391673A (en) 2020-12-03 2020-12-03 Main heater for single crystal furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011412137.XA CN112391673A (en) 2020-12-03 2020-12-03 Main heater for single crystal furnace

Publications (1)

Publication Number Publication Date
CN112391673A true CN112391673A (en) 2021-02-23

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CN202011412137.XA Pending CN112391673A (en) 2020-12-03 2020-12-03 Main heater for single crystal furnace

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116180214A (en) * 2023-04-28 2023-05-30 苏州晨晖智能设备有限公司 Oxygen-reducing type heating device for single crystal furnace

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208346304U (en) * 2018-06-25 2019-01-08 江西中昱新材料科技有限公司 A kind of single crystal growing furnace graphite heating device
CN110278620A (en) * 2019-07-16 2019-09-24 烟台美尔森石墨有限公司 Split-type graphite heater
CN210085617U (en) * 2019-05-20 2020-02-18 浙江晶盛机电股份有限公司 Vertical pulling silicon crystal growth thermal field structure
CN211240121U (en) * 2020-03-20 2020-08-11 山东伟基炭科技有限公司 Heater for vacuum high-temperature furnace
CN211367808U (en) * 2019-11-27 2020-08-28 内蒙古中环光伏材料有限公司 Spliced heater
CN212006896U (en) * 2020-03-19 2020-11-24 新疆启明康源新材料科技有限公司 Spliced main heater
CN111996596A (en) * 2020-08-31 2020-11-27 四川晶科能源有限公司 Heating device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208346304U (en) * 2018-06-25 2019-01-08 江西中昱新材料科技有限公司 A kind of single crystal growing furnace graphite heating device
CN210085617U (en) * 2019-05-20 2020-02-18 浙江晶盛机电股份有限公司 Vertical pulling silicon crystal growth thermal field structure
CN110278620A (en) * 2019-07-16 2019-09-24 烟台美尔森石墨有限公司 Split-type graphite heater
CN211367808U (en) * 2019-11-27 2020-08-28 内蒙古中环光伏材料有限公司 Spliced heater
CN212006896U (en) * 2020-03-19 2020-11-24 新疆启明康源新材料科技有限公司 Spliced main heater
CN211240121U (en) * 2020-03-20 2020-08-11 山东伟基炭科技有限公司 Heater for vacuum high-temperature furnace
CN111996596A (en) * 2020-08-31 2020-11-27 四川晶科能源有限公司 Heating device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116180214A (en) * 2023-04-28 2023-05-30 苏州晨晖智能设备有限公司 Oxygen-reducing type heating device for single crystal furnace

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Address after: 014010 No. 1, Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region

Applicant after: BAOTOU MEIKE SILICON ENERGY Co.,Ltd.

Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd.

Address before: 014010 No. 1, Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region

Applicant before: BAOTOU MEIKE SILICON ENERGY Co.,Ltd.

Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd.

RJ01 Rejection of invention patent application after publication

Application publication date: 20210223