CN112382702B - Annealing method for improving white point of crystalline silicon double-sided battery - Google Patents
Annealing method for improving white point of crystalline silicon double-sided battery Download PDFInfo
- Publication number
- CN112382702B CN112382702B CN202011224663.3A CN202011224663A CN112382702B CN 112382702 B CN112382702 B CN 112382702B CN 202011224663 A CN202011224663 A CN 202011224663A CN 112382702 B CN112382702 B CN 112382702B
- Authority
- CN
- China
- Prior art keywords
- annealing method
- temperature
- protective gas
- boat
- purging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 156
- 238000000137 annealing Methods 0.000 title claims abstract description 70
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 238000010926 purge Methods 0.000 claims abstract description 62
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 47
- 230000003647 oxidation Effects 0.000 claims abstract description 40
- 230000001590 oxidative effect Effects 0.000 claims abstract description 37
- 238000005086 pumping Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 241000519995 Stachys sylvatica Species 0.000 claims abstract description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 84
- 239000007789 gas Substances 0.000 claims description 78
- 230000001681 protective effect Effects 0.000 claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 229910052757 nitrogen Inorganic materials 0.000 claims description 40
- 239000010453 quartz Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 238000005498 polishing Methods 0.000 claims description 13
- 239000003513 alkali Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 46
- 239000012535 impurity Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Primary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which comprises the following steps: (1) entering a boat; (2) primary vacuum pumping; (3) purging; (4) secondary vacuum pumping; (5) heating and oxidizing; (6) constant temperature oxidation; (7) back pressure; (8) taking out of the boat; and (5) performing primary vacuum pumping from the step (2) until the step (6) is in a continuous temperature rise stage before constant temperature oxidation. The annealing method optimizes the annealing process, is in the continuous heating stage from the step (2) to the step (6) in the whole process, does not need to heat and cool first, saves the process time, improves the productivity, obviously reduces the white point proportion of the double-sided battery, is beneficial to industrial mass production, and has better industrial application prospect.
Description
Technical Field
The invention belongs to the technical field of crystalline silicon solar cells, and particularly relates to an annealing method for improving white spots of a crystalline silicon double-sided cell.
Background
In recent years, with the development of the crystalline silicon cell technology, the double-sided cell can generate electricity on the back surface to greatly reduce the cost, and the single-sided solar cell is replaced by the double-sided cell to become a mainstream product in the market. The double-sided battery and the single-sided battery are subjected to thermal oxidation treatment in the preparation process, and the difference is as follows: the back surface of the single-sided battery is covered by the aluminum back field, and even if small white spots exist on the back surface, the back surface is completely covered by the aluminum back field, so that the appearance of the single-sided battery is not poor; when the double-sided battery is produced, the back surface of the battery is adjusted to be printed with aluminum grid lines, if small white spots exist on the back surface, the appearance of the battery appears to be a poor sheet, and the double-sided battery passes through SiO 2 After the thermal oxidation passivation method is adopted, the proportion of white spots on the back of the battery is extremely high, the proportion is 20-30%, the product quality is seriously influenced, and therefore the yield of the double-sided battery is greatly reduced, and therefore, the method for effectively reducing the white spots on the back of the battery is very important.
CN109742185A discloses a temperature and pressure varying thermal oxidation process for improving small white points of a crystalline silicon double-sided battery, which comprises the following steps: (1) feeding; (2) entering a boat; (3) heating; (4) purging; (5) vacuumizing; (6) oxidizing; (7) back pressure cooling; (8) taking out of the boat; (9) and (6) blanking. The method adopts a variable temperature and pressure mode to reduce the white point of PE, but has the following problems: 1) in the method, in the step (3), the temperature in the furnace tube is increased to 850-980 ℃, so that most impurities enter the silicon wafer due to overhigh temperature, the impurities cannot be effectively removed, and the reject ratio of EL is increased; the high-temperature state greatly changes the distribution of phosphorus sources, and the electrical property of the silicon chip is seriously influenced; 2) in the method, the nitrogen flow is set to be 5-10 SLM in the purging step, the pressure in the furnace tube is controlled to be 100-300 mbar, the pressure is too low, the gas flow is too low, the purging effect is limited, and the reduced white point proportion is limited; 3) the method has too long process in the processes of temperature rise and temperature drop, and the productivity is seriously influenced.
CN107256907A discloses an annealing process for improving the small white point of the appearance of a PERC high-efficiency battery plate, comprising the following steps: the temperature of the furnace tube is reduced to 550 ℃, then the silicon wafer is placed in the furnace tube, and oxygen of 5000 +/-1000 sccm is introduced to perform oxidation reaction with impurities on the surface of the silicon wafer; introducing nitrogen of 5000 +/-1000 sccm into the furnace tube for purging, and removing impurities on the surface of the silicon wafer; the temperature in the furnace tube is raised to 700 +/-20 ℃, and then 1000sccm nitrogen is introduced to protect the surface of the silicon wafer so as to avoid secondary pollution; and cooling the silicon wafer to 550 ℃ after the silicon wafer is taken out of the furnace tube. According to the method, the temperature is raised and the oxidation is carried out, and then the operations of purging and vacuumizing are carried out, so that more impurities are generated, and the electrical property of the battery piece is seriously influenced.
In summary, under the condition of controlling the cost, it is a problem to be solved at present to provide a method for effectively reducing the white point of the battery to improve the quality rate of the battery.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide an annealing method for improving white spots of a crystalline silicon double-sided battery, wherein the annealing method optimizes an annealing process, reduces white spot reworking, reduces process time, improves productivity and has a good industrial application prospect.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which comprises the following steps of:
(1) entering a boat; (2) primary vacuum pumping; (3) purging; (4) secondary vacuum pumping; (5) heating and oxidizing; (6) constant temperature oxidation; (7) back pressure; (8) taking out of the boat;
and (5) performing continuous temperature rise from the primary vacuum pumping in the step (2) to the constant temperature oxidation in the step (6).
According to the invention, the annealing process is optimized by the annealing method, the continuous heating stage is performed from the one-time vacuum pumping in the step (2) to the constant-temperature oxidation in the step (6) in the whole process, the temperature is not required to be raised and then lowered, the process time is saved, the capacity is improved, the white point proportion of the double-sided battery is obviously reduced, the industrial scale production is facilitated, and the annealing method has a good industrial application prospect.
The following technical solutions are preferred technical solutions of the present invention, but not limited to the technical solutions provided by the present invention, and technical objects and advantageous effects of the present invention can be better achieved and achieved by the following technical solutions.
As a preferable technical scheme of the invention, the boat feeding mode in the step (1) is to insert the silicon wafers after alkali polishing into a quartz boat and feed the silicon wafers into a furnace tube.
In the invention, the alkali polishing refers to the etching and polishing of the back and the edge of the diffused silicon wafer by adopting inorganic alkali (KOH/NaOH) in an etching process, and the traditional acid polishing etching process is replaced, so that better polishing performance can be obtained, and the process cost is reduced.
Preferably, the boat entering time in the step (1) is 300-600 s, such as 300s, 350s, 400s, 450s, 500s, 550s or 600s, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In the invention, under the condition of ensuring the stable operation of the quartz boat, the silicon wafer after alkali polishing is fed into the furnace tube as soon as possible, so as to reduce the temperature drop of the furnace tube in the boat feeding process.
Preferably, protective gas is introduced into the boat entering process in the step (1).
In the invention, protective gas is introduced during boat entering so as to protect the gas inlet pipe and reduce air entering the furnace tube.
Preferably, the protective gas comprises nitrogen.
Preferably, the flow rate of the protective gas is 1000 to 4000sccm, such as 1000sccm, 1500sccm, 2000sccm, 2500sccm, 3000sccm, 3500sccm, or 4000sccm, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
In a preferred embodiment of the present invention, the time for the one-time vacuum pumping in step (2) is 150 to 250 seconds, for example, 150 seconds, 180 seconds, 200 seconds, 220 seconds, 240 seconds, or 250 seconds, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, the temperature in the one-time vacuum pumping process in the step (2) is increased to 550-600 ℃, such as 550 ℃, 555 ℃, 560 ℃, 565 ℃, 570 ℃, 575 ℃, 580 ℃, 585 ℃, 590 ℃, 565 ℃ or 600 ℃, but not limited to the recited values, and other non-recited values in the range of the values are also applicable.
Preferably, the pressure in the furnace tube after the primary vacuum pumping in step (2) is 50 to 100mbar, such as 50mbar, 60mbar, 70mbar, 80mbar, 90mbar or 100mbar, but not limited to the recited values, and other values in the range of the recited values are also applicable.
In a preferred embodiment of the present invention, the time period for purging in step (3) is 200 to 300 seconds, for example, 200 seconds, 220 seconds, 240 seconds, 260 seconds, 280 seconds, 300 seconds, etc., but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the temperature during the purging in step (3) is increased to 600 to 650 ℃, for example 600 ℃, 605 ℃, 610 ℃, 615 ℃, 620 ℃, 625 ℃, 630 ℃, 635 ℃, 640 ℃, 645 ℃ or 650 ℃, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In the invention, dirty particles or impurities adhered to the surface of the silicon wafer are easily blown away from the silicon wafer by airflow under the condition of 600-650 ℃, if the temperature is too high, most of the dirty particles or impurities enter the silicon wafer and cannot be effectively removed, and the reject ratio of EL is increased; and the high temperature state changes the distribution of phosphorus source to a great extent, and the electrical property of the silicon chip is seriously influenced.
Preferably, step (3) is purged with a protective gas.
Preferably, the flow rate of the protective gas is 11 to 20SLM, such as 11SLM, 12SLM, 14SLM, 16SLM, 18SLM or 20SLM, but not limited to the listed values, and other non-listed values in the range are also applicable.
Preferably, the gas outlet pipe of the furnace pipe is closed in the purging process in the step (3).
Preferably, after the purging in step (3), the pressure in the furnace tube is increased to 700-800 mbar, such as 700mbar, 720mbar, 740mbar, 760mbar, 780mbar or 800mbar, but not limited to the recited values, and other values not recited in the range of values are also applicable.
In the invention, when the silicon wafer after alkali polishing is inserted into the quartz boat, two silicon wafers are closely arranged back to back, and if the silicon wafer is blown and dispersed without external force, dirty particles or impurities attached to the back of the silicon wafer are not easy to come out, so that the dirty particles or the impurities are gathered on the back to generate white spots. And then, introducing protective gas for a certain time and a certain flow, purging the back side of the silicon wafer by using the fluidity of the protective gas, raising the temperature while purging, and blowing out dirty particles or impurities attached to the silicon wafer on the basis of not increasing the process time, so that the cleanliness of the surface of the silicon wafer and the back side of the silicon wafer further meets the higher requirement.
In the invention, the flow of the protective gas needs to be controlled in the purging process. If the flow of the protective gas is too small, the purging effect is limited, and the proportion of white spots reduced is limited; if the flow of the protective gas is too large, the pressure in the furnace tube rises too fast, so that the purging time is reduced, and the purging effect is greatly reduced. .
In a preferred embodiment of the present invention, the time for the secondary vacuum pumping in step (4) is 150 to 250 seconds, for example, 150 seconds, 180 seconds, 200 seconds, 220 seconds, 240 seconds, or 250 seconds, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, the temperature is raised to 650-680 ℃, such as 650 ℃, 655 ℃, 660 ℃, 665 ℃, 670 ℃, 675 ℃ or 680 ℃ during the secondary vacuum-pumping process in step (4), but not limited to the values listed, and other values not listed in the range of values are also applicable.
Preferably, in the secondary vacuum pumping process in step (4), the pressure is reduced to 100-200 mbar, such as 100mbar, 120mbar, 140mbar, 160mbar, 180mbar or 200mbar, but not limited to the recited values, and other unrecited values in the range of the values are also applicable.
In the invention, the vacuum pump is adopted to pump out the purged dirt particles or impurities, thereby providing a good clean environment for subsequent oxidation.
Preferably, after the secondary vacuum pumping in step (4), the temperature is stabilized for 10 to 50 seconds, such as 10 seconds, 20 seconds, 30 seconds, 40 seconds, or 50 seconds, but is not limited to the recited values, and other unrecited values in the range of the recited values are also applicable.
In the invention, after the secondary vacuum pumping, the next operation is carried out after the pressure in the furnace tube is stable.
In a preferred embodiment of the present invention, the time for the temperature-raising oxidation in the step (5) is 200 to 300s, for example, 200s, 220s, 240s, 260s, 280s, or 300s, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the temperature of the temperature-raising oxidation in the step (6) is raised to 680-720 ℃, such as 680 ℃, 685 ℃, 690 ℃, 695 ℃, 700 ℃, 710 ℃ or 720 ℃, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
In the invention, the oxidation is started under the condition of 680 ℃, and the oxidation effect is better.
Preferably, protective gas and oxidizing gas are introduced during the temperature-rising oxidation process of the step (6).
In the invention, a 1600pcs high-temperature furnace is generally adopted for reaction, the pipe diameter is large, the silicon wafer with larger size can be compatible, but the required oxidation time is long, protective gas and oxidizing gas are introduced for oxidation reaction in the temperature rising process, the time of the whole process flow is reduced, the productivity and efficiency are improved, and the method has good and industrialized prospect.
Preferably, the oxidizing gas comprises oxygen.
Preferably, the flow rate of the protective gas is 1 to 6SLM, such as 1SLM, 2SLM, 3SLM, 4SLM, 5SLM, or 6SLM, but not limited to the recited values, and other unrecited values in the range of values are also applicable.
Preferably, the flow rate of the oxidizing gas is 800 to 3000sccm, such as 800sccm, 900sccm, 1200sccm, 1500sccm, 1800sccm, 2000sccm, 2400sccm, 2800sccm, or 3000sccm, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
In a preferred embodiment of the present invention, the temperature of the constant-temperature oxidation in the step (6) is 680 to 720 ℃, for example, 680 ℃, 685 ℃, 690 ℃, 695 ℃, 700 ℃, 710 ℃ or 720 ℃, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the time of constant temperature oxidation in step (6) is 900 to 1500s, such as 900s, 1000s, 1100s, 1200s, 1300s, 1400s, 1500s, etc., but not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, protective gas and oxidizing gas are introduced during the constant-temperature oxidation in the step (7).
Preferably, the flow rate of the protective gas is 1 to 6SLM, such as 1SLM, 2SLM, 3SLM, 4SLM, 5SLM, or 6SLM, but not limited to the recited values, and other unrecited values in the range of values are also applicable.
Preferably, the flow rate of the oxidizing gas is 800 to 3000sccm, such as 800sccm, 900sccm, 1200sccm, 1500sccm, 1800sccm, 2000sccm, 2400sccm, 2800sccm, or 3000sccm, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
In a preferred embodiment of the present invention, the time of the back pressure in step (7) is 100 to 200s, for example, 100s, 110s, 120s, 130s, 140s, 150s, 160s, 170s, 180s, 190s, or 200s, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, protective gas is introduced during the back pressure in the step (7).
Preferably, the flow rate of the protective gas is 20 to 40SLM, such as 20SLM, 25SLM, 30SLM, 35SLM or 40SLM, but not limited to the listed values, and other values in the range are also applicable.
Preferably, the air outlet pipe of the furnace pipe is closed in the process of the back pressure in the step (7).
Preferably, the pressure after the back pressure in the step (7) is normal pressure.
In a preferred embodiment of the present invention, the time for taking out the boat in step (8) is 300 to 600s, for example, 300s, 350s, 400s, 450s, 500s, 550s, or 600s, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, protective gas is introduced into the boat discharging process in the step (8).
Preferably, the flow rate of the protective gas is 1000 to 4000sccm, such as 1000sccm, 1500sccm, 2000sccm, 2500sccm, 3000sccm, 3500sccm, or 4000sccm, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
In the present invention, the protective gas in each step comprises nitrogen.
In the present invention, the oxidizing gas in each step includes oxygen.
As a preferred embodiment of the present invention, the annealing method includes the steps of:
(1) entering a boat: inserting the silicon wafer after alkali polishing into a quartz boat, feeding the quartz boat into a furnace tube, and introducing protective gas of 1000-4000 sccm in the boat feeding process, wherein the boat feeding time is 300-600 s;
(2) primary vacuumizing: vacuumizing for 150-250 s by using a vacuum pump, heating to 550-600 ℃ in the vacuumizing process, and controlling the pressure in the furnace tube to be 50-100 mbar after vacuumizing;
(3) purging: purging with protective gas for 200-300 s, wherein the flow of the protective gas is 11-20 SLM, closing an air outlet pipe in the purging process, heating to 600-650 ℃, and raising the pressure in a furnace pipe to 700-800 mbar after purging;
(4) secondary vacuum pumping: vacuumizing for 150-250 s by using a vacuum pump, wherein the pressure in the furnace tube after vacuumizing is 100-200 mbar, and the temperature is raised to 650-680 ℃ in the vacuumizing process, and is stabilized for 10-50 s under the condition;
(5) heating and oxidizing: raising the temperature in the furnace tube to 680-720 ℃, introducing protective gas and oxidizing gas in the temperature raising process, wherein the flow of the protective gas is 1-6 SLM, the flow of the oxidizing gas is 800-3000 sccm, and the temperature raising and oxidizing time is 200-300 s;
(6) constant-temperature oxidation: continuously oxidizing for 900-1500 s under the conditions that the temperature is 680-720 ℃, the flow of protective gas is 1-6 SLM, and the flow of oxidizing gas is 800-3000 sccm;
(7) back pressure: introducing protective gas of 20-40 SLM (selective laser melting) at 680-720 ℃, closing an air outlet pipe for back pressure, wherein the time of the back pressure is 100-200 s, and the pressure in the furnace tube is normal pressure after the back pressure;
(8) taking out of the boat: the flow rate of the protective gas is changed to 1000-4000 sccm, and then the silicon wafer is taken out from the furnace tube, wherein the time is 300-600 s.
In the present invention, the annealing method can be used for single crystal PERC bifacial cells.
In the invention, all the steps require that the pressure deviation is within 2mbar and the leakage rate is within 8 mbar/min; ensuring the furnace tube atmosphere to be stable.
Compared with the prior art, the invention has the following beneficial effects:
the degradation method optimizes the annealing process, the process is in a continuous temperature rise stage from one-time vacuum pumping in the step (2) to before constant-temperature oxidation in the step (6) in the whole process, temperature rise and then temperature reduction are not needed, the oxidation reaction is carried out while the temperature rise is carried out, the time used by the process flow is greatly reduced, the capacity efficiency is improved, the white point proportion of the double-sided battery is greatly reduced by further controlling the temperature of the oxidation reaction, the flow of protective gas in the purging process and the pressure in the furnace tube, the electrical property of the silicon wafer is improved, the white point proportion of the front side of the double-sided battery is below 0.40%, and the white point proportion of the back side of the double-sided battery is below 0.33%.
Drawings
Fig. 1 is a process flow chart of an annealing method for improving white spots of a crystalline silicon double-sided battery provided in embodiment 1 of the invention.
Detailed Description
In order to better illustrate the present invention and facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the present invention, which is defined by the claims.
The invention provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which comprises the following steps:
(1) entering a boat; (2) primary vacuum pumping; (3) purging; (4) secondary vacuum pumping; (5) heating and oxidizing; (6) constant temperature oxidation; (7) back pressure; (8) taking out of the boat;
and (5) performing primary vacuum pumping from the step (2) until the step (6) is in a continuous temperature rise stage before constant temperature oxidation.
The following are typical but non-limiting examples of the invention:
example 1:
the embodiment provides an annealing method for improving white spots of a crystalline silicon double-sided battery, and a process flow chart of the annealing method is shown in figure 1.
The annealing method comprises the following steps:
(1) entering a boat: inserting the silicon wafer after alkali polishing into a quartz boat, feeding the quartz boat into a furnace tube, and introducing 2500sccm nitrogen in the boat feeding process for 450 s;
(2) primary vacuumizing: vacuumizing for 200s by using a vacuum pump, heating to 580 ℃ in the vacuumizing process, and controlling the pressure in the furnace tube to be 75mbar after vacuumizing;
(3) purging: purging for 250s by adopting nitrogen, wherein the flow rate of the nitrogen is 16SLM, closing an air outlet pipe in the purging process, heating to 625 ℃, and raising the pressure in the furnace pipe to 750mbar after purging;
(4) secondary vacuum pumping: vacuumizing for 200s by using a vacuum pump, wherein the pressure in a furnace tube after vacuumizing is 150mbar, and the temperature is raised to 660 ℃ in the vacuumizing process and is stabilized for 30s under the condition;
(5) heating and oxidizing: raising the temperature in the furnace tube to 700 ℃, introducing nitrogen and oxygen in the temperature raising process, wherein the flow of the nitrogen is 4SLM, the flow of the oxygen is 2000sccm, and the time of temperature raising and oxidation is 250 s;
(6) constant-temperature oxidation: continuously oxidizing for 1200s under the conditions that the temperature is 700 ℃, the flow of nitrogen is 3SLM and the flow of oxygen is 2500 sccm;
(7) back pressure: introducing nitrogen of 30SLM (selective vacuum melting) at 700 ℃, closing an air outlet pipe for back pressure, wherein the time of the back pressure is 150s, and the pressure in a furnace tube is normal pressure after the back pressure;
(8) taking out of the boat: the flow rate of the nitrogen gas was changed to 2500sccm, and then the silicon wafer was taken out from the furnace tube for 450 s.
Example 2:
the embodiment provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which comprises the following steps:
(1) entering a boat: inserting the silicon wafer after alkali polishing into a quartz boat, feeding the quartz boat into a furnace tube, and introducing 1000sccm nitrogen in the boat feeding process, wherein the boat feeding time is 300 s;
(2) primary vacuumizing: vacuumizing for 150s by using a vacuum pump, heating to 550 ℃ in the vacuumizing process, and controlling the pressure in the furnace tube to be 50mbar after vacuumizing;
(3) purging: purging with nitrogen for 200s, wherein the flow rate of the nitrogen is 11SLM, closing an air outlet pipe in the purging process, heating to 600 ℃, and after purging, increasing the pressure in the furnace pipe to 700 mbar;
(4) secondary vacuum pumping: vacuumizing for 150s by using a vacuum pump, wherein the pressure in the furnace tube after vacuumizing is 100mbar, and the temperature is raised to 650 ℃ in the vacuumizing process, and is stabilized for 10s under the condition;
(5) heating and oxidizing: heating the temperature in the furnace tube to 680 ℃, introducing nitrogen and oxygen in the heating process, wherein the flow of the nitrogen is 1SLM, the flow of the oxygen is 800sccm, and the heating oxidation time is 200 s;
(6) constant-temperature oxidation: continuously oxidizing for 900s under the conditions that the flow rate of nitrogen is 1SLM and the flow rate of oxygen is 800sccm at 680 ℃;
(7) back pressure: introducing 20SLM nitrogen at 680 ℃, closing an air outlet pipe for back pressure, wherein the time of the back pressure is 100s, and the pressure in a furnace tube is normal pressure after the back pressure;
(8) taking out of the boat: the flow rate of the nitrogen gas was changed to 1000sccm, and then the silicon wafer was taken out from the furnace tube for 300 seconds.
Example 3:
the embodiment provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which comprises the following steps:
(1) entering a boat: inserting the silicon wafer after alkali polishing into a quartz boat, feeding the quartz boat into a furnace tube, and introducing 4000sccm of nitrogen in the boat feeding process, wherein the boat feeding time is 600 s;
(2) primary vacuumizing: vacuumizing for 250s by using a vacuum pump, heating to 600 ℃ in the vacuumizing process, and controlling the pressure in the furnace tube to be 100mbar after vacuumizing;
(3) purging: purging with nitrogen for 300s, wherein the flow rate of the nitrogen is 20SLM, closing an air outlet pipe in the purging process, heating to 650 ℃, and after purging, increasing the pressure in the furnace pipe to 800 mbar;
(4) secondary vacuum pumping: vacuumizing for 250s by using a vacuum pump, wherein the pressure in the furnace tube after vacuumizing is 200mbar, and the temperature is raised to 680 ℃ in the vacuumizing process, and is stabilized for 50s under the condition;
(5) heating and oxidizing: raising the temperature in the furnace tube to 720 ℃, introducing nitrogen and oxygen in the temperature raising process, wherein the flow of the nitrogen is 6SLM, the flow of the oxygen is 3000sccm, and the time of temperature raising and oxidation is 300 s;
(6) constant-temperature oxidation: continuously oxidizing for 1500s at 720 ℃, under the conditions that the flow of nitrogen is 6SLM and the flow of oxygen is 3000 sccm;
(7) back pressure: introducing nitrogen of 40SLM (selective vacuum melting) at 720 ℃, closing an air outlet pipe for back pressure, wherein the time of the back pressure is 200s, and the pressure in a furnace tube is normal pressure after the back pressure;
(8) taking out of the boat: the flow rate of the nitrogen gas is changed to 4000sccm, and then the silicon wafer is taken out from the furnace tube, and the time is 600 s.
Example 4:
the embodiment provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which comprises the following steps:
(1) entering a boat: inserting the silicon wafer after alkali polishing into a quartz boat, feeding the quartz boat into a furnace tube, and introducing 3000sccm nitrogen in the boat feeding process for 500 s;
(2) primary vacuumizing: vacuumizing for 270s by using a vacuum pump, heating to 560 ℃ in the vacuumizing process, and controlling the pressure in the furnace tube to be 90mbar after vacuumizing;
(3) purging: purging for 220s by adopting nitrogen, wherein the flow rate of the nitrogen is 17SLM, closing the gas outlet pipe in the purging process, heating to 610 ℃, and raising the pressure in the furnace pipe to 780mbar after purging;
(4) secondary vacuum pumping: vacuumizing for 210s by using a vacuum pump, wherein the pressure in the furnace tube is 110mbar after vacuumizing, and the temperature is raised to 650 ℃ in the vacuumizing process, and is stabilized for 40s under the condition;
(5) heating and oxidizing: heating the temperature in the furnace tube to 690 ℃, introducing nitrogen and oxygen in the heating process, wherein the flow of the nitrogen is 2SLM, the flow of the oxygen is 1000sccm, and the heating oxidation time is 210 s;
(6) constant-temperature oxidation: continuously oxidizing for 1000s under the conditions that the temperature is 690 ℃, the flow of nitrogen is 5SLM, and the flow of oxygen is 1200 sccm;
(7) back pressure: introducing nitrogen of 25SLM (selective laser melting) at 690 ℃, closing an air outlet pipe for back pressure, wherein the time of the back pressure is 180s, and the pressure in a furnace tube is normal pressure after the back pressure;
(8) taking out of the boat: the flow rate of the nitrogen gas was changed to 1500sccm, and then the silicon wafer was taken out from the furnace tube for 350 seconds.
Example 5:
this example provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which is referred to the annealing method in example 2, except that: and (4) the flow of the nitrogen in the purging step in the step (3) is 9 SLM.
Example 6:
this example provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which is referred to the annealing method in example 3, except that: and (4) the flow rate of the nitrogen in the purging step in the step (3) is 22 SLM.
Example 7:
this example provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which is referred to the annealing method in example 2, except that: and (4) after purging in the step (3), the pressure of the furnace tube is 650 mbar.
Comparative example 1:
this comparative example provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which is referred to the annealing method in example 3 except that: and (3) raising the temperature to 850 ℃ in the purging process in the step (3), maintaining the temperature of 850 ℃ unchanged during the secondary vacuumizing in the step (4), and reducing the temperature to 720 ℃ during the oxidation reaction in the step (5).
Comparative example 2:
this comparison provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which is referred to the annealing method in example 2, except that: and (4) controlling the flow of the nitrogen to be 5SLM in the purging process in the step (3).
Comparative example 3:
this comparative example provides an annealing method for improving white spots of a crystalline silicon double-sided battery, which is referred to the annealing method in example 2 except that: and (4) after purging in the step (3), the pressure of the furnace tube is 300 mbar.
Automatically sorting the silicon wafers obtained in the examples 1-7 and the comparative examples 1-3 by using a British Pop sorting machine to obtain the proportion of a white point production line on the front surface of the silicon wafer; since the back surface of the silicon wafer cannot be counted by the sorting machine, manual sorting and classification are performed to obtain the white point production line ratio of the back surface of the silicon wafer, and the result is shown in table 1.
TABLE 1 white point line ratios of front and back sides of silicon wafers obtained in examples 1-7 and comparative examples 1-3
As can be seen from Table 1, the white point line ratios of the front and back sides of the silicon wafers obtained in examples 1 to 4 were significantly reduced; in the embodiment 5 and the comparative example 2, the nitrogen flow in the purging process is reduced, so that the white point ratio of the front side and the back side of the obtained silicon wafer is higher, which shows that the nitrogen flow is reduced, so that the effect of removing dirt particles or impurities is limited, therefore, the flow of the protective gas is controlled to be 11-20 SLM, the dirt particles or impurities can be effectively removed, and the white point ratio of the front side and the back side of the silicon wafer is reduced; in the embodiment 6, the nitrogen flow in the purging process is increased, so that the pressure rising process is too fast, the purging time is greatly reduced, and the purging effect is greatly reduced; in example 7 and comparative example 3, the pressure in the furnace tube after purging was low, resulting in a high ratio of white dots on the front and back of the obtained silicon wafer, because the pressure setting of the furnace tube is low and the pressure rising process is too fast; and the gas concentration in the furnace tube is low when the pressure is low, namely the purged gas is less, so that the purging effect is further reduced; in the comparative example 1, the operation from the step (3) to the step (5) is carried out by firstly heating and then cooling, so that the time of the process flow is increased, the capacity is reduced, and meanwhile, most of dirt particles or impurities enter the silicon wafer at the high temperature of 850 ℃, cannot be effectively removed, and the reject ratio of EL is increased; and the distribution of phosphorus source is changed to a great extent, and the electrical property of the silicon chip is seriously influenced.
At present, the proportion of front white dots production lines of silicon wafers obtained by the traditional annealing process is more than 0.6 percent, and the proportion of back white dots production lines is more than 1 percent, even reaches 3 percent.
It can be seen from the above examples and comparative examples that the method of the present invention optimizes the annealing process, performs the oxidation reaction while raising the temperature, greatly reduces the time for the process flow, improves the productivity and efficiency, and further controls the temperature of the oxidation reaction, the flow of the protective gas during the purging process and the pressure in the furnace tube, greatly reduces the proportion of white spots of the double-sided battery, improves the electrical performance of the silicon wafer, makes the proportion of white spots on the front side of the double-sided battery below 0.40%, and the proportion of white spots on the back side below 0.33%, and has good industrial application prospects.
The applicant states that the present invention is illustrated by the above examples to show the detailed method of the present invention, but the present invention is not limited to the above detailed method, that is, it does not mean that the present invention must rely on the above detailed method to be carried out. It will be apparent to those skilled in the art that any modifications to the present invention, equivalents thereof, additions of additional operations, selection of specific ways, etc., are within the scope and disclosure of the present invention.
Claims (31)
1. An annealing method for improving white spots of a crystalline silicon double-sided battery is characterized by comprising the following steps: (1) entering a boat; (2) primary vacuum pumping; (3) purging; (4) secondary vacuum pumping; (5) heating and oxidizing; (6) constant temperature oxidation; (7) back pressure; (8) taking out of the boat;
continuously raising the temperature from the primary vacuum pumping in the step (2) to the constant-temperature oxidation in the step (6);
the temperature rises to 550-600 ℃ in the primary vacuumizing process in the step (2);
the temperature is raised to 600-650 ℃ in the purging process in the step (3); purging by adopting protective gas, wherein the flow of the protective gas is 11-20 SLM, and after purging, the pressure in the furnace pipe is increased to 700-800 mbar;
in the secondary vacuum pumping process in the step (4), the temperature is raised to 650-680 ℃;
raising the temperature of the temperature rise oxidation in the step (5) to 680-720 ℃;
and (4) the temperature of the constant-temperature oxidation in the step (6) is 680-720 ℃.
2. The annealing method according to claim 1, wherein the boat in step (1) is fed by inserting the alkali-polished silicon wafer into a quartz boat and feeding the quartz boat into a furnace tube.
3. The annealing method according to claim 1, wherein the time for the boat feeding in step (1) is 300 to 600 s.
4. The annealing method according to claim 1, wherein a protective gas is introduced during the boat entering process in step (1).
5. The annealing method of claim 4, wherein said protective gas comprises nitrogen.
6. The annealing method according to claim 4, wherein the flow rate of the protective gas is 1000 to 4000 sccm.
7. The annealing method according to claim 1, wherein the time for the primary vacuum pumping in the step (2) is 150 to 250 seconds.
8. The annealing method according to claim 1, wherein the pressure in the furnace tube after the primary vacuum pumping in the step (2) is 50 to 100 mbar.
9. The annealing method according to claim 1, wherein the purging time in step (3) is 200 to 300 seconds.
10. The annealing method according to claim 1, wherein the gas outlet pipe of the furnace tube is closed during the purging in step (3).
11. The annealing method according to claim 1, wherein the time of the secondary vacuum pumping in the step (4) is 150-250 s.
12. The annealing method according to claim 1, wherein the pressure in the secondary vacuum process in step (4) is reduced to 100-200 mbar.
13. The annealing method according to claim 1, wherein the secondary vacuum pumping in step (4) is stable for 10-50 s.
14. The annealing method according to claim 1, wherein the temperature-raising oxidation time in the step (5) is 200 to 300 seconds.
15. The annealing method according to claim 1, wherein a protective gas and an oxidizing gas are introduced during the temperature-raising oxidation in the step (5).
16. The annealing method of claim 15, wherein said oxidizing gas comprises oxygen.
17. The annealing method according to claim 15, wherein the flow rate of the protective gas is 1 to 6 SLM.
18. The annealing method according to claim 15, wherein a flow rate of the oxidizing gas is 800 to 3000 sccm.
19. The annealing method according to claim 1,
and (4) the constant-temperature oxidation time in the step (6) is 900-1500 s.
20. The annealing method according to claim 1, wherein protective gas and oxidizing gas are introduced during the constant temperature oxidation in step (6).
21. The annealing method according to claim 20, wherein the flow rate of the protective gas is 1 to 6 SLM.
22. The annealing method according to claim 20, wherein a flow rate of the oxidizing gas is 800 to 3000 sccm.
23. The annealing method according to claim 1, wherein the time of the back pressure in the step (7) is 100 to 200 s.
24. The annealing method according to claim 1, wherein a protective gas is introduced during the back pressure in step (7).
25. The annealing method according to claim 24, wherein the flow rate of the protective gas is 20 to 40 SLM.
26. The annealing method according to claim 1, wherein the outlet pipe of the furnace tube is closed during the back pressure in step (7).
27. The annealing method according to claim 1, wherein the pressure after the back pressure in step (7) is normal pressure.
28. The annealing method according to claim 1, wherein the time for taking out the boat in step (8) is 300 to 600 seconds.
29. The annealing method according to claim 1, wherein a protective gas is introduced during the boat-out in step (8).
30. The annealing method according to claim 29, wherein the flow rate of the protective gas is 1000 to 4000 sccm.
31. The annealing method according to claim 1, characterized in that it comprises the steps of:
(1) entering a boat: inserting the silicon wafer after alkali polishing into a quartz boat, feeding the quartz boat into a furnace tube, and introducing protective gas of 1000-4000 sccm in the boat feeding process, wherein the boat feeding time is 300-600 s;
(2) primary vacuumizing: vacuumizing for 150-250 s by using a vacuum pump, heating to 550-600 ℃ in the vacuumizing process, and controlling the pressure in the furnace tube to be 50-100 mbar after vacuumizing;
(3) purging: purging with protective gas for 200-300 s, wherein the flow of the protective gas is 11-20 SLM, closing an air outlet pipe in the purging process, heating to 600-650 ℃, and raising the pressure in a furnace pipe to 700-800 mbar after purging;
(4) secondary vacuum pumping: vacuumizing for 150-250 s by using a vacuum pump, wherein the pressure in the furnace tube after vacuumizing is 100-200 mbar, and the temperature is raised to 650-680 ℃ in the vacuumizing process, and is stabilized for 10-50 s under the condition;
(5) heating and oxidizing: raising the temperature in the furnace tube to 680-720 ℃, introducing protective gas and oxidizing gas in the temperature raising process, wherein the flow of the protective gas is 1-6 SLM, the flow of the oxidizing gas is 800-3000 sccm, and the temperature raising and oxidizing time is 200-300 s;
(6) constant-temperature oxidation: continuously oxidizing for 900-1500 s under the conditions that the temperature is 680-720 ℃, the flow of protective gas is 1-6 SLM, and the flow of oxidizing gas is 800-3000 sccm;
(7) back pressure: introducing protective gas of 20-40 SLM (selective laser melting) at 680-720 ℃, closing an air outlet pipe for back pressure, wherein the time of the back pressure is 100-200 s, and the pressure in the furnace tube is normal pressure after the back pressure;
(8) taking out of the boat: the flow of the protective gas is changed to 1000-4000 sccm, and then the silicon wafer is taken out from the furnace tube, wherein the time is 300-600 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011224663.3A CN112382702B (en) | 2020-11-05 | 2020-11-05 | Annealing method for improving white point of crystalline silicon double-sided battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011224663.3A CN112382702B (en) | 2020-11-05 | 2020-11-05 | Annealing method for improving white point of crystalline silicon double-sided battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112382702A CN112382702A (en) | 2021-02-19 |
| CN112382702B true CN112382702B (en) | 2022-08-16 |
Family
ID=74579228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011224663.3A Active CN112382702B (en) | 2020-11-05 | 2020-11-05 | Annealing method for improving white point of crystalline silicon double-sided battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112382702B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421944B (en) * | 2021-05-18 | 2022-08-23 | 平煤隆基新能源科技有限公司 | Oxidation annealing process for improving conversion efficiency of crystalline silicon solar cell |
| CN117352598B (en) * | 2023-12-06 | 2024-02-23 | 无锡松煜科技有限公司 | Method for reducing cross hidden crack rate of polycrystalline silicon layer in TopCon battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204614764U (en) * | 2015-02-04 | 2015-09-02 | 晋能清洁能源科技有限公司 | Silicon chip surface microparticle scavenge unit |
| CN107331728A (en) * | 2017-06-20 | 2017-11-07 | 常州亿晶光电科技有限公司 | The technique for improving PERC high-efficiency battery EL yields |
| CN109004063A (en) * | 2018-07-06 | 2018-12-14 | 横店集团东磁股份有限公司 | A kind of thermal oxidation process of crystal silicon solar battery |
| CN110690319A (en) * | 2019-08-30 | 2020-01-14 | 江苏顺风新能源科技有限公司 | Oxidation annealing process of high-efficiency monocrystalline silicon battery |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW478062B (en) * | 2000-12-05 | 2002-03-01 | Nat Science Council | A method of surface treatment on the improvement of electrical properties for doped SiO2 films |
| CN103681976A (en) * | 2013-12-27 | 2014-03-26 | 百力达太阳能股份有限公司 | High-efficiency low-cost solar cell diffusion technology |
| CN109742185B (en) * | 2018-12-20 | 2021-08-20 | 横店集团东磁股份有限公司 | Temperature-changing pressure-changing thermal oxidation process for improving small white points of crystalline silicon double-sided battery |
| CN111384210B (en) * | 2019-12-27 | 2021-10-22 | 横店集团东磁股份有限公司 | High open voltage diffusion high sheet resistance process for PERC (permanent resistance resistor) overlapped SE (selective emitter current) |
-
2020
- 2020-11-05 CN CN202011224663.3A patent/CN112382702B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204614764U (en) * | 2015-02-04 | 2015-09-02 | 晋能清洁能源科技有限公司 | Silicon chip surface microparticle scavenge unit |
| CN107331728A (en) * | 2017-06-20 | 2017-11-07 | 常州亿晶光电科技有限公司 | The technique for improving PERC high-efficiency battery EL yields |
| CN109004063A (en) * | 2018-07-06 | 2018-12-14 | 横店集团东磁股份有限公司 | A kind of thermal oxidation process of crystal silicon solar battery |
| CN110690319A (en) * | 2019-08-30 | 2020-01-14 | 江苏顺风新能源科技有限公司 | Oxidation annealing process of high-efficiency monocrystalline silicon battery |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112382702A (en) | 2021-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112382702B (en) | Annealing method for improving white point of crystalline silicon double-sided battery | |
| JP2020520560A (en) | Tube type PERC single-sided solar cell, its manufacturing method and its dedicated device | |
| CN107331730A (en) | The renovation technique and preparation technology of tubular type PERC solar cells | |
| WO2018157492A1 (en) | Preparation method for p-type perc solar cell, p-type perc solar cell, cell assembly, and cell system | |
| CN109148643B (en) | Method for solving problem of efficiency reduction of PERC battery in ALD mode after electric injection or light injection | |
| CN116682894B (en) | Method for improving batch-to-batch uniformity of ALD passivation films of TOPCON battery and application | |
| JP6951476B2 (en) | Coating method of PERC solar cell using tube type PECVD coating device | |
| CN105624795A (en) | Heat treatment method for n-type silicon wafer | |
| JP2006203022A (en) | Transparent conductive film formation apparatus and multilayer transparent conductive film continuous formation apparatus, and film formation method thereof | |
| CN111223761B (en) | Method for improving quality of deposited polycrystalline silicon surface particles | |
| CN102856174A (en) | Preparation method for silicon nitride film, solar cell with silicon nitride film and preparation method for solar cell | |
| CN109742185B (en) | Temperature-changing pressure-changing thermal oxidation process for improving small white points of crystalline silicon double-sided battery | |
| CN102784775A (en) | Method for cleaning boron-diffusion furnace tubes | |
| CN102903785A (en) | Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation | |
| CN112670373B (en) | Oxidation annealing method of crystalline silicon solar cell and application thereof | |
| CN113421944B (en) | Oxidation annealing process for improving conversion efficiency of crystalline silicon solar cell | |
| CN108470800B (en) | Method for reducing TMA consumption of PECVD (plasma enhanced chemical vapor deposition) machine | |
| CN112670374A (en) | Low-voltage annealing method for crystalline silicon solar cell | |
| CN112164733A (en) | Preparation method of solar cell diffusion deep junction | |
| CN114695598B (en) | Preparation method and application of crystalline silicon solar cell with shallow junction diffusion emitter | |
| CN1112293A (en) | Method of and apparatus for fabrication of photovoltaic cell | |
| CN115064613B (en) | Improvement method of PERC battery EL sintering cloud and mist sheet | |
| CN110137307B (en) | High-uniformity shallow junction diffusion process in low-pressure environment | |
| CN112309815B (en) | Recovery method after maintenance of MOCVD (metal organic chemical vapor deposition) system for producing LED (light-emitting diode) epitaxial wafer | |
| CN115148853B (en) | Tubular single-sided aluminum oxide coating method, PERC battery and photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |