CN112366963A - Driving power supply circuit based on gallium nitride power chip - Google Patents

Driving power supply circuit based on gallium nitride power chip Download PDF

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Publication number
CN112366963A
CN112366963A CN202011214820.2A CN202011214820A CN112366963A CN 112366963 A CN112366963 A CN 112366963A CN 202011214820 A CN202011214820 A CN 202011214820A CN 112366963 A CN112366963 A CN 112366963A
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Prior art keywords
resistor
circuit module
chip
voltage output
pin
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CN202011214820.2A
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Chinese (zh)
Inventor
王万里
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Jiangyin Wonder Electronic Co ltd
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Jiangyin Wonder Electronic Co ltd
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Priority to CN202011214820.2A priority Critical patent/CN112366963A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention discloses a driving power supply circuit based on a gallium nitride power chip, which comprises an EMI filtering and rectifying circuit module, an APFC active power factor correction circuit module, a PWM control circuit module, a power switch gallium nitride chip U4, a switch transformer T1A and an output rectifying and filtering circuit module which are sequentially connected in the direction from AC input to DC output, wherein, the APFC active power factor correction circuit module realizes power factor correction by connecting with the PFC control circuit module, a voltage detection feedback loop used for outputting voltage detection feedback is arranged between the output rectifying and filtering circuit module and the PWM control circuit module, the voltage detection feedback loop comprises an optical coupler and a voltage detection sampling circuit module, the output rectifying and filtering circuit module is connected with the optical coupler through the voltage detection sampling circuit module, and the optical coupler is connected with the PWM control circuit module. The invention improves the performance of the driving power supply and realizes the miniaturization of the driving power supply.

Description

Driving power supply circuit based on gallium nitride power chip
Technical Field
The invention relates to the technical field of driving power supplies, in particular to a driving power supply circuit based on a gallium nitride power chip.
Background
In power electronic and electrical equipment, efficient power conversion is an important means for realizing environmental protection and energy conservation. Efficient power conversion is achieved by efficient switching devices. At present, silicon-based power semiconductor devices are generally adopted as switching devices in a driving power supply circuit. However, the performance of the conventional silicon power device gradually becomes a bottleneck, from the transistor, the field effect transistor, the gate controlled transistor IGBT, the diode and the like which take silicon as the material to the gallium nitride (GaN) based switching device which is the third generation wide bandgap semiconductor material which is developed day by day, and the gallium nitride power device in the third generation gallium nitride wide bandgap semiconductor device has smaller on-resistance and can bear higher switching frequency compared with the MOSFET of the silicon material. The gallium nitride has the properties of wide direct band gap, strong atomic bond, high thermal conductivity, high chemical stability (hardly corroded by any acid), strong irradiation resistance and the like, and has wide prospects in the application aspects of photoelectrons, high-temperature high-power devices and high-frequency microwave devices.
The power semiconductor device is the basis of power electronic technology, is the core of power electronic equipment, and during the working process, there are two kinds of power loss: the switching loss and the conduction loss of the device are mainly the on-off loss when the device works at high frequency. In practical applications, the device is required to be turned on and off in a limited time, the voltage and current change is completed instantaneously, otherwise the device fails and other system components are likely to be damaged. Therefore, as a switching device, the power semiconductor device must have the characteristics of high switching speed, large current and voltage bearing capability, small operating loss, and the like.
Therefore, in order to break through the technical bottleneck of the silicon-based power semiconductor device, it is necessary to develop a driving power supply circuit having lower loss, higher power supply characteristics, and miniaturization.
Disclosure of Invention
In order to solve the above problems, the present invention provides a driving power circuit based on a gan power chip, which aims to improve the performance of the driving power and to miniaturize the driving power. The specific technical scheme is as follows:
a driving power supply circuit based on a gallium nitride power chip comprises an EMI filtering and rectifying circuit module, an APFC active power factor correction circuit module, a PWM control circuit module, a power switch gallium nitride chip U4, a switch transformer T1A and an output rectifying and filtering circuit module which are sequentially connected in the direction from AC input to DC output, wherein the APFC active power factor correction circuit module realizes power factor correction by connecting with the PFC control circuit module, a voltage detection feedback loop for outputting voltage detection feedback is arranged between the output rectifying and filtering circuit module and the PWM control circuit module, the voltage detection feedback loop comprises an optical coupler and a voltage detection sampling circuit module, the output rectification filter circuit module is connected with the optical coupler through the voltage detection sampling circuit module, and the optical coupler is connected with the PWM control circuit module.
In the invention, the EMI filtering and rectifying circuit module comprises an adjustable resistor VAR1, an excitation coil LF2, a capacitor CX1, an excitation coil LF1, series resistors R48-R47-R60, a capacitor CX2 and a patch type rectifying bridge BD1 which are sequentially connected between a live wire and a zero wire of an AC input.
In the invention, the APFC active power factor correction circuit module comprises a rectified voltage output positive line HB + and a rectified voltage output negative line which are connected with the voltage output end of the patch type rectifier bridge BD1, the rectified voltage output positive line HB + is sequentially provided with an inductance coil with an iron core L1, a thermistor TH1 with a positive temperature coefficient, an inductance coil with an iron core T2B and a pair of parallel diodes D10, a resistor RS2 is arranged on the rectified voltage output negative electrode wire, a capacitor C29 and an enhanced N-MOS field effect transistor Q3 are respectively arranged on the rectified voltage output positive electrode wire HB + and the rectified voltage output negative electrode wire, the drain electrode of the enhanced N-MOS field effect transistor Q3 is connected with the rectified voltage output positive pole line HB +, the source electrode is connected with the rectified voltage output negative pole line, and a capacitor C35 is connected between the drain electrode and the source electrode of the enhancement type N-MOS field effect transistor Q3 in parallel.
In the invention, the PFC control circuit module comprises a power factor correction controller chip U8, a source lead-out resistor R64 of the enhanced N-MOS field effect transistor Q3 is connected with a grid electrode of the enhanced N-MOS field effect transistor Q3 and then connected to a pin DRV of the power factor correction controller chip U8 through a diode D13 and a resistor R63 which are arranged in series, and two ends of the diode D13 and the resistor R63 which are arranged in series are connected with a resistor R65 in parallel; and a pin VCC of the power factor correction controller chip U8 is connected with the PWM control circuit module.
In the invention, the PWM control circuit module includes a quasi-resonant flyback controller chip U5, a voltage supply line is led out from a position between the thermistor TH1 and the iron core-equipped inductance coil T2B on a positive rectification voltage output line HB + of the APFC active power factor correction circuit module, a diode D9 is connected between the voltage supply line and an output end of the positive rectification voltage output line HB +, the voltage supply line is connected to a pin VH of the quasi-resonant flyback controller chip U5 through a series resistor R6-R13, a group of inductance coils T1B are led out from the switching transformer T1A, a positive terminal of the inductance coils T1B is connected to a pin Zcd/Opp of the quasi-resonant flyback controller chip U5 through a resistor R24 and a diode D6, and a positive terminal of the inductance coils T1B is sequentially connected to forward-arranged diodes D5, D6, A diode D8, a triode Q2 and a diode D3 are respectively connected to a pin Vcc of the quasi-resonant flyback controller chip U5 and a pin Vcc of the power switch gallium nitride chip U4, a capacitor C7 and a resistor R14 which are arranged in series are connected in parallel to the diode D5, the base of the triode Q2 is connected to a protection ground PGND through a zener diode ZD2, a resistor R45 is connected between the cathode of the diode D8 and the collector of the triode Q2, the anode of the diode D8 is connected to a protection ground PGND through capacitors C27 and C28, and the emitter of the triode Q2 is connected to a pin Vcc of the power factor correction controller chip U8 through a diode D11; a pin DRV of the quasi-resonant flyback controller chip U5 is connected to a pin PWM of the power switch gallium nitride chip U4 through a resistor R23, and a pin Cs of the quasi-resonant flyback controller chip U5 is connected to a pin SS of the power switch gallium nitride chip U4 through a resistor R26.
In the invention, a pin Fault of the quasi-resonant flyback controller chip U5 is connected with a thermistor NTC1 with a negative temperature coefficient.
In the invention, a primary side coil of a switch transformer T1A is connected between the rectified voltage output positive electrode line HB + and a pin DF of the power switch gallium nitride chip U4, and a secondary side coil of the switch transformer T1A is connected with the output rectifying and filtering circuit module; a diode D1, a resistor R5 and a capacitor C7 are sequentially connected between a pin DF of the power switch gallium nitride chip U4 and the positive line HB + of the rectified voltage output, and series resistors R1-R2 are arranged at two ends of the resistor R5 and the capacitor C7 in parallel.
In the invention, the output rectifying and filtering circuit module comprises a synchronous rectifying controller chip U1, a direct-current voltage output positive electrode line V + and a direct-current voltage output negative electrode line V-which are connected to a secondary side coil of the switching transformer T1A, an enhanced N-MOS field effect transistor Q1 is arranged on the direct-current voltage output negative electrode line V-, a capacitor EC2, a capacitor C3, a capacitor EC3 and an excitation coil LF3 are sequentially arranged between the direct-current voltage output positive electrode line V + and the direct-current voltage output negative electrode line V-, a pin VG of the synchronous rectifying controller chip U1 is connected with a gate of the enhanced N-MOS field effect transistor Q1, a pin VD of the synchronous rectifying controller chip U1 is connected to a drain of the enhanced N-MOS field effect transistor Q1 through a resistor R10, and a drain of the enhanced N-MOS field effect transistor Q1 is connected to a source of the enhanced N-MOS field effect transistor Q1 through a resistor R3 and a capacitor C4 And a pin Vdd of the synchronous rectification controller chip U1 is connected to the positive dc voltage output line V + through a resistor R9 and connected to the voltage detection and sampling circuit module through the resistor R9.
In the invention, the voltage detection sampling circuit module comprises a resistor R15, a resistor R20 and a voltage stabilizing diode U3 which are sequentially connected between a direct current voltage output positive line V + and a direct current voltage output negative line V-, wherein the resistor R20 is connected with a light emitting diode U2A of the optical coupler, and a pin Fb of the quasi-resonance flyback controller chip U5 is connected with a phototriode U2B of the optical coupler through a resistor R20; the resistor R12, the resistor R19 and the capacitor C8 which are arranged in series are connected in parallel at two ends of the resistor R15 after being connected with the resistor R20 in series, and the resistor R12 is connected with the resistor R19 and then connected to the common end of the voltage-stabilizing diode U3 through a lead.
Preferably, the switch transformer is a switch transformer manufactured by adopting a planar process.
In the invention, the driving power supply circuit also comprises a constant current control circuit module, and an operational amplifier chip is arranged in the constant current control circuit module.
In the invention, the power factor correction controller chip U8 adopts an NCP1654 chip or the like PFC control chip, the quasi-resonance flyback controller chip U5 adopts an NCP1342 chip or the like quasi-resonance flyback controller chip, the power switch gallium nitride chip U4 adopts an NV6125 chip or the like power switch gallium nitride chip, the synchronous rectification controller chip U1 adopts an NCP4306 chip or the like synchronous rectification controller chip, and the operational amplifier chip adopts an LM321 chip or the like operational amplifier chip.
The invention has the beneficial effects that:
first, the driving power circuit based on the gallium nitride power chip of the invention has the advantages of fast switching speed, large current and voltage bearing capacity, small working loss and the like.
Secondly, the driving power circuit based on the gallium nitride power chip, the switching transformer and the like are manufactured by adopting a planar process, so that the miniaturization of the driving power is favorably realized.
Drawings
FIG. 1 is a schematic diagram of the general principle of a driving power circuit based on a GaN power chip according to the present invention;
FIG. 2 is a circuit diagram of a driving power circuit based on a GaN power chip according to the present invention;
FIG. 3 is an enlarged view of a portion of the EMI filter and rectifier circuit module of FIGS. 1 and 2;
fig. 4 is a partially enlarged view of a modular portion of the APFC active power factor correction circuit of fig. 1 and 2;
fig. 5 is a partially enlarged view of a modular portion of the PFC control circuit of fig. 1 and 2;
fig. 6 is a partially enlarged view of a module portion of the PWM control circuit of fig. 1 and 2;
fig. 7 is an enlarged partial view of a portion of power switch gallium nitride die U4 of fig. 1 and 2;
fig. 8 is an enlarged partial view of the output rectifying and filtering circuit block section and the voltage detection feedback loop section of fig. 1 and 2 (in which the photo-transistor U2B of the optocoupler is connected in the PWM control circuit block of fig. 6).
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Fig. 1 to 8 show an embodiment of a driving power circuit based on a gan power chip according to the present invention, which includes an EMI filter and rectifier circuit module, an APFC active power factor correction circuit module, a PWM control circuit module, a power switch gan chip U4, a switching transformer T1A, and an output rectifier filter circuit module, which are sequentially connected in a direction from an AC input to a DC output, wherein the APFC active power factor correction circuit module implements power factor correction by being connected to a PFC control circuit module, a voltage detection feedback loop for outputting voltage detection feedback is provided between the output rectifier filter circuit module and the PWM control circuit module, the voltage detection feedback loop includes an optical coupler and a voltage detection sampling circuit module, the output rectifier filter circuit module is connected to the optical coupler through the voltage detection sampling circuit module, the optical coupler is connected with the PWM control circuit module.
In this embodiment, the EMI filter and rectifier circuit module includes an adjustable resistor VAR1, an excitation coil LF2, a capacitor CX1, an excitation coil LF1, series resistors R48-R47-R60, a capacitor CX2, and a patch rectifier bridge BD1, which are sequentially connected between a live wire and a neutral wire of an AC input.
In this embodiment, the APFC active power factor correction circuit module includes a positive line HB + for rectified voltage output and a negative line HB + for rectified voltage output connected to the voltage output terminal of the patch rectifier bridge BD1, the rectified voltage output positive line HB + is sequentially provided with an inductance coil with an iron core L1, a thermistor TH1 with a positive temperature coefficient, an inductance coil with an iron core T2B and a pair of parallel diodes D10, a resistor RS2 is arranged on the rectified voltage output negative electrode wire, a capacitor C29 and an enhanced N-MOS field effect transistor Q3 are respectively arranged on the rectified voltage output positive electrode wire HB + and the rectified voltage output negative electrode wire, the drain electrode of the enhanced N-MOS field effect transistor Q3 is connected with the rectified voltage output positive pole line HB +, the source electrode is connected with the rectified voltage output negative pole line, and a capacitor C35 is connected between the drain electrode and the source electrode of the enhancement type N-MOS field effect transistor Q3 in parallel.
In this embodiment, the PFC control circuit module includes a power factor correction controller chip U8, a source lead-out resistor R64 of the enhanced N-MOS fet Q3 is connected to a gate of the enhanced N-MOS fet Q3, and then connected to a pin DRV of the power factor correction controller chip U8 through a diode D13 and a resistor R63 that are connected in series, and two ends of the diode D13 and the resistor R63 that are connected in series are connected in parallel to a resistor R65; and a pin VCC of the power factor correction controller chip U8 is connected with the PWM control circuit module.
In this embodiment, the PWM control circuit module includes a quasi-resonant flyback controller chip U5, a voltage supply line is led out from a position between the thermistor TH1 and the iron core-equipped inductor T2B on a positive line HB + of a rectified voltage output of the APFC active power factor correction circuit module, a diode D9 is connected between the voltage supply line and an output end of the positive line HB + of the rectified voltage output, the voltage supply line is connected to a pin VH of the quasi-resonant flyback controller chip U5 through a series resistor R6-R13, a set of inductor T1B is led out from the switching transformer T1A, a positive terminal of the inductor T1B is connected to a pin Zcd/Opp of the quasi-resonant flyback controller chip U5 through a resistor R24 and a diode D6, and a positive terminal of the inductor T1B is sequentially connected to a forward diode D5, a forward diode D6, and a forward diode D5, A diode D8, a triode Q2 and a diode D3 are respectively connected to a pin Vcc of the quasi-resonant flyback controller chip U5 and a pin Vcc of the power switch gallium nitride chip U4, a capacitor C7 and a resistor R14 which are arranged in series are connected in parallel to the diode D5, the base of the triode Q2 is connected to a protection ground PGND through a zener diode ZD2, a resistor R45 is connected between the cathode of the diode D8 and the collector of the triode Q2, the anode of the diode D8 is connected to a protection ground PGND through capacitors C27 and C28, and the emitter of the triode Q2 is connected to a pin Vcc of the power factor correction controller chip U8 through a diode D11; a pin DRV of the quasi-resonant flyback controller chip U5 is connected to a pin PWM of the power switch gallium nitride chip U4 through a resistor R23, and a pin Cs of the quasi-resonant flyback controller chip U5 is connected to a pin SS of the power switch gallium nitride chip U4 through a resistor R26.
In this embodiment, a pin Fault of the quasi-resonant flyback controller chip U5 is connected to a thermistor NTC1 with a negative temperature coefficient.
In this embodiment, a primary coil of a switching transformer T1A is connected between the rectified voltage output positive line HB + and a pin DF of the power switch gallium nitride chip U4, and a secondary coil of the switching transformer T1A is connected to the output rectifying and filtering circuit module; a diode D1, a resistor R5 and a capacitor C7 are sequentially connected between a pin DF of the power switch gallium nitride chip U4 and the positive line HB + of the rectified voltage output, and series resistors R1-R2 are arranged at two ends of the resistor R5 and the capacitor C7 in parallel.
In this embodiment, the output rectifying and filtering circuit module includes a synchronous rectifying controller chip U1, a dc voltage output positive line V + and a dc voltage output negative line V-connected to the secondary winding of the switching transformer T1A, an enhanced N-MOS fet Q1 is disposed on the dc voltage output negative line V-, a capacitor EC2, a capacitor C3, a capacitor EC3 and a field coil LF3 are sequentially disposed between the dc voltage output positive line V + and the dc voltage output negative line V-, a pin VG of the synchronous rectifying controller chip U1 is connected to a gate of the enhanced N-MOS fet Q1, a pin VD of the synchronous rectifying controller chip U1 is connected to a drain of the enhanced N-MOS fet Q1 through a resistor R10, and a drain of the enhanced N-MOS fet Q1 is connected to a drain of the enhanced N-MOS fet Q1 through a resistor R3 and a capacitor C4 And a source electrode, wherein a pin Vdd of the synchronous rectification controller chip U1 is connected with the DC voltage output positive line V + through a resistor R9 and is connected with the voltage detection sampling circuit module through the resistor R9.
In this embodiment, the voltage detection sampling circuit module includes a resistor R15, a resistor R20, and a zener diode U3 sequentially connected between the dc voltage output positive line V + and the dc voltage output negative line V-, the resistor R20 is connected to the light emitting diode U2A of the optical coupler, and the pin Fb of the quasi-resonant flyback controller chip U5 is connected to the photo-transistor U2B of the optical coupler through a resistor R20; the resistor R12, the resistor R19 and the capacitor C8 which are arranged in series are connected in parallel at two ends of the resistor R15 after being connected with the resistor R20 in series, and the resistor R12 is connected with the resistor R19 and then connected to the common end of the voltage-stabilizing diode U3 through a lead.
Preferably, the switch transformer is a switch transformer manufactured by adopting a planar process.
In this embodiment, the driving power supply circuit further includes a constant current control circuit module, and an operational amplifier chip is disposed in the constant current control circuit module.
In this embodiment, the power factor correction controller chip U8 employs an NCP1654 chip or the same kind of PFC control chip, the quasi-resonant flyback controller chip U5 employs an NCP1342 chip or the same kind of quasi-resonant flyback controller chip, the power switch gallium nitride chip U4 employs an NV6125 chip or the same kind of power switch gallium nitride chip, the synchronous rectification controller chip U1 employs an NCP4306 chip or the same kind of synchronous rectification controller chip, and the operational amplifier chip employs an LM321 chip or the same kind of operational amplifier chip.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (10)

1. A driving power supply circuit based on a gallium nitride power chip is characterized by comprising an EMI filtering and rectifying circuit module, an APFC active power factor correction circuit module, a PWM control circuit module, a power switch gallium nitride chip U4, a switch transformer T1A and an output rectifying and filtering circuit module which are sequentially connected in the direction from AC input to DC output, wherein the APFC active power factor correction circuit module realizes power factor correction by being connected with a PFC control circuit module, a voltage detection feedback loop for outputting voltage detection feedback is arranged between the output rectifying and filtering circuit module and the PWM control circuit module, the voltage detection feedback loop comprises an optical coupler and a voltage detection sampling circuit module, the output rectifying and filtering circuit module is connected with the optical coupler through the voltage detection sampling circuit module, the optical coupler is connected with the PWM control circuit module.
2. The driving power supply circuit based on the gallium nitride power chip as claimed in claim 1, wherein the EMI filter and rectifier circuit module comprises an adjustable resistor VAR1, a field coil LF2, a capacitor CX1, a field coil LF1, a series resistor R48-R47-R60, a capacitor CX2, and a patch rectifier bridge BD1 sequentially connected between a live line and a neutral line of an AC input.
3. The driving power circuit based on the GaN power chip as claimed in claim 2, wherein the APFC active power factor correction circuit module comprises a positive rectified voltage output line HB + and a negative rectified voltage output line connected to the voltage output end of the patch type rectifier bridge BD1, the positive rectified voltage output line HB + is sequentially provided with an inductance coil with iron core L1, a thermistor TH1 with positive temperature coefficient, an inductance coil with iron core T2B and a pair of parallel diodes D10, the negative rectified voltage output line is provided with a resistor RS2, the positive rectified voltage output line HB + and the negative rectified voltage output line are respectively provided with a capacitor C29 and an enhanced N-MOS FET Q3, the drain of the enhanced N-MOS FET Q3 is connected with the positive rectified voltage output line HB +, and the source is connected with the negative rectified voltage output line, and a capacitor C35 is connected between the drain electrode and the source electrode of the enhancement type N-MOS field effect transistor Q3 in parallel.
4. The driving power supply circuit based on GaN power chip as claimed in claim 3, wherein the PFC control circuit module includes a PFC controller chip U8, a source extraction resistor R64 of the enhanced N-MOS FET Q3 is connected to a gate of the enhanced N-MOS FET Q3 and then connected to a pin DRV of the PFC controller chip U8 through a series-connected diode D13 and a resistor R63, and two ends of the series-connected diode D13 and the resistor R63 are connected in parallel with a resistor R65; and a pin VCC of the power factor correction controller chip U8 is connected with the PWM control circuit module.
5. The GaN-based power supply circuit as claimed in claim 4, wherein the PWM control circuit module includes a quasi-resonant flyback controller chip U5, a voltage supply line is led out from a rectified voltage output positive line HB + of the APFC active power factor correction circuit module at a position between the thermistor TH1 and the iron-cored inductor T2B, a diode D9 is connected between the voltage supply line and an output end of the rectified voltage output positive line HB +, the voltage supply line is connected to a pin VH of the quasi-resonant flyback controller chip U5 through series resistors R6-R13, a set of inductor T1B is led out from the switch transformer T1A, a positive end of the inductor T1B is connected to a pin Zcd/Opp of the quasi-resonant flyback controller chip U5 through a resistor R24 and a diode D6, the positive end of the inductance coil T1B is connected to a pin Vcc of the quasi-resonant flyback controller chip U5 and a pin Vcc of the power switch gallium nitride chip U4 sequentially through a diode D5, a diode D8, a triode Q2 and a diode D3 which are arranged in the forward direction, respectively, the diode D5 is connected in parallel with a capacitor C7 and a resistor R14 which are arranged in series, the base of the triode Q2 is connected with a protection ground PGND through a zener diode ZD2, a resistor R45 is connected between the cathode of the diode D8 and the collector of the triode Q2, the anode end of the diode D8 is connected with a protection ground PGND through a capacitor C27 and a capacitor C28, respectively, and the emitter of the triode Q2 is connected to a pin Vcc of the power factor correction controller chip U8 through a diode D11; a pin DRV of the quasi-resonant flyback controller chip U5 is connected to a pin PWM of the power switch gallium nitride chip U4 through a resistor R23, and a pin Cs of the quasi-resonant flyback controller chip U5 is connected to a pin SS of the power switch gallium nitride chip U4 through a resistor R26.
6. The GaN-based power supply circuit as claimed in claim 5, wherein the pin Fault of the quasi-resonant flyback controller chip U5 is connected with a negative temperature coefficient thermistor NTC 1.
7. The GaN-based power chip driving power supply circuit of claim 5, wherein a primary winding of a switching transformer T1A is connected between the rectified voltage output positive line HB + and a pin DF of the power switching GaN chip U4, and a secondary winding of the switching transformer T1A is connected to the output rectifying and filtering circuit module; a diode D1, a resistor R5 and a capacitor C7 are sequentially connected between a pin DF of the power switch gallium nitride chip U4 and the positive line HB + of the rectified voltage output, and series resistors R1-R2 are arranged at two ends of the resistor R5 and the capacitor C7 in parallel.
8. The GaN-based power supply circuit of claim 7, wherein the output rectifying and filtering circuit module comprises a synchronous rectifying controller chip U1, a positive DC voltage output line V + connected to the secondary winding of the switching transformer T1A, and a negative DC voltage output line V-, on which an enhanced N-MOS FET Q1 is disposed, and a capacitor EC2, a capacitor C3, a capacitor EC3 and a field coil LF3 are sequentially disposed between the positive DC voltage output line V + and the negative DC voltage output line V-, a pin VG of the synchronous rectifying controller chip U1 is connected to the gate of the enhanced N-MOS FET Q1, a pin VD of the synchronous rectifying controller chip U1 is connected to the drain of the enhanced N-MOS FET Q1 through a resistor R10, the drain electrode of the enhanced N-MOS field effect transistor Q1 is connected to the source electrode of the enhanced N-MOS field effect transistor Q1 through a resistor R3 and a capacitor C4, and a pin Vdd of the synchronous rectification controller chip U1 is connected with the positive direct-current voltage output line V + through a resistor R9 and is connected with the voltage detection sampling circuit module through a resistor R9.
9. The driving power supply circuit based on the GaN power chip as claimed in claim 8, wherein the voltage detection sampling circuit module comprises a resistor R15, a resistor R20 and a voltage regulator diode U3 connected in sequence between the positive line V + of the DC voltage output and the negative line V-of the DC voltage output, the resistor R20 is connected with a light emitting diode U2A of the optical coupler, and a pin Fb of the quasi-resonant flyback controller chip U5 is connected with a photo-transistor U2B of the optical coupler through a resistor R20; the resistor R12, the resistor R19 and the capacitor C8 which are arranged in series are connected in parallel at two ends of the resistor R15 after being connected with the resistor R20 in series, and the resistor R12 is connected with the resistor R19 and then connected to the common end of the voltage-stabilizing diode U3 through a lead.
10. The driving power circuit based on gan power chip as claimed in claim 9, wherein the switch transformer is a planar switch transformer.
CN202011214820.2A 2020-11-04 2020-11-04 Driving power supply circuit based on gallium nitride power chip Pending CN112366963A (en)

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CN202011214820.2A CN112366963A (en) 2020-11-04 2020-11-04 Driving power supply circuit based on gallium nitride power chip

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Application Number Priority Date Filing Date Title
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CN112366963A true CN112366963A (en) 2021-02-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117294294A (en) * 2023-11-22 2023-12-26 深圳市弗镭斯激光技术有限公司 Electro-optical Q switch driving circuit based on gallium nitride MOS tube

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117294294A (en) * 2023-11-22 2023-12-26 深圳市弗镭斯激光技术有限公司 Electro-optical Q switch driving circuit based on gallium nitride MOS tube
CN117294294B (en) * 2023-11-22 2024-03-19 深圳市弗镭斯激光技术有限公司 Electro-optical Q switch driving circuit based on gallium nitride MOS tube

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