CN112366432B - Three-mode HMSIW balanced band-pass filter with common-mode rejection and compact structure - Google Patents
Three-mode HMSIW balanced band-pass filter with common-mode rejection and compact structure Download PDFInfo
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Abstract
The invention discloses a three-mode HMSIW balanced band-pass filter with common-mode rejection and compact structure, which comprises three layers of dielectric substrates and an HMSIW resonanceThe differential feed structure comprises a cavity, a perturbation metal through hole array and a differential feed structure; the HMSIW resonant cavity is in an isosceles right triangle shape and comprises an upper metal layer, a lower metal layer and an L-shaped metal through hole array etched on the middle medium substrate; the perturbation metal through hole array comprises a semi-annular perturbation metal through hole array etched on the middle-layer medium substrate, and the circle center of the perturbation metal through hole array is located at the center of the bevel edge of the HMSIW resonant cavity. The invention can effectively control the TE101, TE201 and TE202 modes, and the electric field during resonance is changed by perturbing the former two modes, so as to realize three-mode transmission; and adding two strip-shaped perturbation metal through hole arrays to further interfere the mode. The thickness of the dielectric substrate is smaller than that of the medium substrate by adopting HMSIW and using a planar microstrip differential feed structureλ gAnd 4, common-mode noise can be effectively inhibited, and a three-mode passband is formed by utilizing three resonance modes of the perturbation metal through hole array for moving and adjusting the cavity.
Description
Technical Field
The invention relates to the technical field of balanced band-pass filters, in particular to a three-mode HMSIW balanced band-pass filter with common-mode rejection and compact structure.
Background
With the continuous progress of wireless communication technology, various new wireless communication systems are emerging, which greatly facilitates the development of microwave devices, especially filter technology. In modern communication systems, balanced circuits have attracted considerable attention due to their high common mode rejection and high immunity to environmental noise and electromagnetic interference, compared to single-port circuits. To increase the capacity of wireless systems, much research has been focused on balanced Band Pass Filters (BPFs).
However, in the microwave high-frequency band or millimeter wave band, if the balanced filter operating in this band only adopts the transmission line structure, there are high radiation loss, low power handling capability, and high quality factor QeLow, etc., and thus cannot be continuously applied.
In order to design a balanced band-pass filter with better performance, a Substrate Integrated Waveguide (SIW) technology is introduced and applied in design, has the advantages of high quality factor, simple manufacture, low cost and the like, and is an ideal choice for designing microwave devices and millimeter wave devices. In recent years, researchers have designed various balanced SIW bandpass filters and balanced HMSIW filters.
Disclosure of Invention
The present invention provides a three-mode HMSIW balanced band-pass filter with common-mode rejection and compact structure, which can effectively control the TE101, TE201, and TE202 modes, and realize three-mode transmission mainly by perturbing the first two modes to change the electric field during resonance; and then adding two rows of micro-interference through hole arrays perpendicular to the right-angle sides respectively to further interfere the former two modes. The invention adopts HMSIW and uses a planar microstrip differential feed structure, so that the thickness of the substrate is less than lambdag/4, common mode noise can be effectively inhibited, and finally a multimode transmission passband is formed. The designed balance filter not only has common-mode rejection performance, but also can perform mode selection, and meets the actual requirements of a differential communication system.
In order to solve the technical problems, the invention adopts the technical scheme that:
a three-mode HMSIW balanced band-pass filter with common-mode rejection and compact structure comprises three layers of dielectric substrates, an HMSIW resonant cavity, a perturbation metal through hole array and a differential feed structure.
The three-layer medium substrate comprises an upper layer medium substrate, a middle layer medium substrate and a lower layer medium substrate which are arranged in a laminated mode from top to bottom.
The HMSIW resonant cavity is in an isosceles right triangle shape and comprises an upper metal layer, a lower metal layer and an L-shaped metal through hole array.
The upper metal layer is printed between the upper medium substrate and the middle medium substrate, and the lower metal layer is printed between the middle medium substrate and the lower medium substrate. An L-shaped metal via array is etched on the middle layer dielectric substrate.
The perturbation metal through hole array comprises a semi-annular perturbation metal through hole array which is etched on the middle-layer medium substrate and is positioned in the HMSIW resonant cavity, and the circle center of the semi-annular perturbation metal through hole array is positioned at the center of the bevel edge of the HMSIW resonant cavity.
The differential feed structure is arranged on two right-angle sides of the HMSIW resonant cavity and used for differentially feeding the HMSIW resonant cavity.
The perturbation metal via array further comprises two strip-shaped perturbation metal via arrays which are symmetrical about the symmetry axis of the HMSIW resonant cavity. The two strip-shaped perturbation metal through hole arrays are respectively vertical to two waists of the HMSIW resonant cavity, and one ends of the two strip-shaped perturbation metal through hole arrays are connected with the semi-annular perturbation metal through hole array.
The length of the two strip-shaped perturbation metal through hole arrays isl 1=7.7mm, and the included angle between each strip-shaped perturbation metal through hole array and the inclined edge of the HMSIW resonant cavity is equal toθ=45°。
The differential feed structure includes two upper layer feed ports and two lower layer feed ports.
The two upper-layer feed ports are arranged on the upper-layer dielectric substrate and are symmetrical about a symmetry axis of the HMSIW resonant cavity.
The two lower-layer feed ports are arranged on the lower-layer dielectric substrate and are symmetrical about a symmetry axis of the HMSIW resonant cavity.
The two upper layer feed ports and the two lower layer feed ports form two sets of microstrip-probe feed structures.
Two probe positions of the two groups of microstrip-probe feed structures are symmetrical about a symmetry axis of the HMSIW resonant cavity, and the distance between each probe position and two waists of the HMSIW resonant cavity is respectivelyl 2=48.2mm，l 3=13.2mm。
The three layers of medium substrates comprise an isosceles right triangle plate and two rectangular plates. Two rectangular plates are vertically arranged on two waists of the isosceles right triangle plate and are symmetrical about the symmetry axis of the isosceles right triangle plate. The feed access ends of the differential feed structures are arranged on the two rectangular plates.
Radius of semi-annular perturbation metal through hole arrayr 1=8.2mm, length of the waist of the HMSIW resonatorl=62.4mm。
Diameter of metal through hole in L-shaped metal through hole array and perturbation metal through hole arrayd=0.8mm, inter-hole spacingp=1.2mm。
The thickness of the middle layer medium substrate is less thanλ g/4, whereinλ gIndicating the operating frequency wavelength of the balanced bandpass filter.
The three-layer dielectric substrate is of a Rogers RT/Duroid5880 type, the relative dielectric constant is 2.2, the thickness is 0.508mm, and the loss tangent is 0.0009.
The invention has the following beneficial effects:
(1) since the structure of the SIW (Substrate Integrated Waveguide) is small in size, light in weight and low in manufacturing cost, and is easy to combine with a planar circuit, the balance circuit and the SIW structure are combined, and a balance device applied to a higher frequency band can be designed. In order to facilitate the analysis of the balanced network, mixed mode S parameters are introduced, and the theory comprises Sdd parameters and Scc parameters, so that the S parameters are more suitable for describing the balanced circuit characteristics of a symmetrical structure compared with the S parameters of a single-port network. In addition, the filter is taken as one of key devices in the radio frequency front end, the comprehensive method of the filter has a representative meaning, and the coupling matrix theory is the basis of the design of the substrate integrated waveguide cavity filter.
(2) The half mode rather than the full mode can reduce the structure of the filter, and the effect of compact structure is achieved.
(3) The invention designs a balanced band-pass filter by adopting a substrate integrated waveguide, utilizes a semi-annular metal through hole array and two rows of mutually vertical strip-shaped metal through hole arrays to carry out perturbation to realize the movement and control of modes, thereby adjusting the bandwidth and finally forming a three-mode pass band, thereby effectively controlling TE101, TE201 and TE202 modes, and realizing three-mode transmission by changing the electric field during resonance mainly through the two modes before perturbation.
(4) The feed mode of the invention adopts a planar microstrip differential feed structure, so that the thickness of the medium substrate of the middle layer is smaller than that of the medium substrate of the middle layerλ gAnd/4, common-mode noise can be effectively suppressed, and the laminated HMSIW structure of the filter can realize inherent common-mode suppression. In addition, during common mode operation, the height of the medium layer substrate is less than that of the medium layer substrateλg/4, the space between the PEC and PMC cannot transmit electromagnetic waves, so this structure can effectively shield CM noise over a wide frequency range.
Drawings
Fig. 1 shows a schematic view of a printed circuit board used.
Fig. 2 shows a schematic three-dimensional structure of a three-mode HMSIW balanced bandpass filter according to the present invention.
FIG. 3 shows a schematic structural diagram of an HMSIW chamber on a laminated dielectric substrate according to the present invention.
FIG. 4 shows simulation and test diagrams of a three-mode HMSIW balanced bandpass filter according to the present invention.
Fig. 5 shows a prototype diagram of a three-mode HMSIW balanced bandpass filter of the present invention.
Fig. 6 shows an expanded prototype of three-layered dielectric substrate in the three-mode HMSIW balanced bandpass filter according to the invention.
Among them are: 1. an L-shaped metal via array; 2. a semi-annular perturbation metal through hole array; 3. a strip-shaped perturbation metal through hole array; 4. a probe hole; 5. a probe; 6. an upper feed microstrip line; 7. and the lower layer is a feed microstrip line.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific preferred embodiments.
In the description of the present invention, it is to be understood that the terms "left side", "right side", "upper part", "lower part", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and that "first", "second", etc., do not represent an important degree of the component parts, and thus are not to be construed as limiting the present invention. The specific dimensions used in the present example are only for illustrating the technical solution and do not limit the scope of protection of the present invention.
As shown in fig. 2, a three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure includes three layers of dielectric substrates, an HMSIW resonant cavity, a perturbation metal via array and a differential feed structure.
As shown in fig. 1 and 2, the three-layered dielectric substrate includes an upper-layer dielectric substrate Sub1, a middle-layer dielectric substrate Sub2, and a lower-layer dielectric substrate Sub3, which are stacked from top to bottom.
Wherein the thickness of the middle layer medium substrate is less thanλ g/4, whereinλ gIndicating the operating frequency wavelength of the balanced bandpass filter. The thickness of the middle layer medium substrate is less thanλ gAnd 4, common mode noise can be effectively suppressed, and the laminated HMSIW structure of the filter can realize inherent common mode suppression. In addition, during common mode operation, the height of the medium layer substrate is less than that of the medium layer substrateλg/4, the space between the PEC and PMC cannot transmit electromagnetic waves, so this structure can effectively shield CM noise over a wide frequency range.
In the invention, the three-layer dielectric substrate is preferably in a model number of Rogers RT/Duroid5880, the relative dielectric constant is 2.2, the thickness is 0.508mm, and the loss tangent is 0.0009.
As shown in fig. 2, 5 and 6, each of the three dielectric substrates includes an isosceles right triangle plate and two rectangular plates. Two rectangular plates are vertically arranged on two waists of the isosceles right triangle plate and are symmetrical about the symmetry axis of the isosceles right triangle plate.
The HMSIW resonant cavity is in the shape of an isosceles right triangle and comprises an upper metal layer, a lower metal layer and an L-shaped metal through hole array 1.
The upper side metal layer is printed between the upper layer medium substrate and the middle layer medium substrate, preferably on the upper surface of the middle layer medium substrate; the lower metal layer is printed between the middle dielectric substrate and the lower dielectric substrate, preferably on the lower surface of the middle dielectric substrate.
The L-shaped metal through hole array is etched on the isosceles right triangle plate on the middle layer medium substrate to form two rows of vertical metal through hole arrays of the L-shaped metal through hole array, which form two waists of the HMSIW resonant cavity and are symmetrical about the symmetry axis of the isosceles right triangle plate.
As shown in FIG. 3, the waist length of the HMSIW chamber is preferably selected to bel=62.4mm, the hypotenuse is aa', located on the hypotenuse of the isosceles right triangle; the midpoint of the hypotenuse aa' is a. By adjusting the cavity size of the HMSIW cavity, a resonant mode of a suitable frequency can be selected.
The perturbation metal through hole array comprises a semi-annular perturbation metal through hole array 2 and two strip perturbation metal through hole arrays 3.
The semi-annular perturbation metal through hole array is etched on the middle-layer medium substrate and is positioned in the HMSIW resonant cavity, and the circle center of the semi-annular perturbation metal through hole array is positioned at the center point of the bevel edge of the HMSIW resonant cavity, namely is superposed with the point A. The radius of the semi-annular perturbation metal through hole array is preferablyr 1=8.2mm。
The two strip-shaped perturbation metal through hole arrays are symmetrical about the symmetrical axis of the HMSIW resonant cavity, the two strip-shaped perturbation metal through hole arrays are respectively vertical to two waists of the HMSIW resonant cavity, and one ends of the two strip-shaped perturbation metal through hole arrays are connected with the semi-annular perturbation metal through hole array.
In addition, the two strip-shaped perturbation metal through hole arrays extend to the inclined edge aa' and can be intersected at the midpoint A of the inclined edge.
The length of the two strip-shaped perturbation metal through hole arrays is preferablyl 1=7.7mm, and the included angle between each strip-shaped perturbation metal through hole array and the inclined edge of the HMSIW resonant cavity is preferably setθ=45°。
The diameters of the metal through holes in the L-shaped metal through hole array and the perturbation metal through hole array are optimizedd=0.8mm, the spacing between holes is preferably setp=1.2mm。
The semi-ring perturbation metal through hole array can effectively control TE101、TE201、TE202Mode, mainly through two kinds of modes before the perturbation in order to change the electric field when it resonates, realize the three-mode transmission; and adding two strip-shaped perturbation metal through hole arrays to further interfere the former two modes.
The differential feed structure is arranged on two right-angle sides of the HMSIW resonant cavity and used for differentially feeding the HMSIW resonant cavity.
The differential feed structure includes two upper layer feed ports and two lower layer feed ports.
The two upper-layer feed ports are arranged on the upper-layer dielectric substrate and are symmetrical about a symmetry axis of the HMSIW resonant cavity.
The two lower-layer feed ports are arranged on the lower-layer dielectric substrate and are symmetrical about a symmetry axis of the HMSIW resonant cavity.
The two upper layer feed ports and the two lower layer feed ports form two groups of microstrip-probe feed structures, namely the differential feed structure specifically comprises two upper feed microstrip lines 6, two lower feed microstrip lines 7 and two probes 5.
Two probe holes 4 are arranged at the positions of the three layers of dielectric substrates adjacent to the bevel edge, the two probe holes are symmetrical about the symmetrical axis of the HMSIW resonant cavity, and the distance between each probe hole and the two waists of the HMSIW resonant cavity is respectivelyl 2=48.2mm，l 3=13.2mm。
Two upper feed microstrip lines are printed on the upper surface of the upper-layer dielectric substrate and are symmetrical about the symmetry axis of the isosceles right triangle plate. The two upper feed microstrip lines are L-shaped, the outer ends of the two upper feed microstrip lines are positioned on the rectangular plate of the upper-layer dielectric substrate, and two feed-in ports 1 and ports 2 are formed; the inner side ends of the two upper feed microstrip lines respectively point to the two probe holes 4.
Two lower feed microstrip lines are printed on the lower surface of the lower-layer dielectric substrate and are symmetrical about the symmetry axis of the isosceles right triangle plate. The two lower feed microstrip lines are L-shaped, the outer ends of the two lower feed microstrip lines are positioned on the rectangular plate of the lower dielectric substrate, and two feed ports 1 'and 2' are formed; the inner side ends of the two lower feed microstrip lines respectively point to the two probe holes 4.
The two probes are positioned in the two probe holes and electrically connect the corresponding upper feed microstrip line and the lower feed microstrip line, thereby forming two groups of differential feeds.
Fig. 4 shows a filter simulation and test chart. The 3dB fractional bandwidth under 4.5GHz obtained by simulation is 8%, and the measured differential mode passband reaches 7.6% of the 3dB fractional bandwidth under 4.5 GHz. The minimum insertion loss is 1.36 dB. At 3.5-5.5GHz, the equivalent circuit of the balanced filter can be equivalent to a single-ended filter with a substrate, but with a height halved, when operating in differential mode. In common mode operation, the height of the substrate is smaller thanλg/4, the space between the PEC and the PMC cannot transmit electromagnetic waves, so the structure can be widerEffectively masking CM noise over a range of frequencies.
From the above, the balanced band-pass filter is designed by adopting the substrate integrated waveguide, and the flexible control of three different resonant frequencies is realized by utilizing the movement of the semi-annular perturbation metal through hole array and the two strip perturbation metal through hole arrays and controlling the resonant mode of the HMSIW cavity, so that the bandwidth is adjusted. The half mode rather than the full mode can reduce the structure of the filter, and the effect of compact structure is achieved.
The feed mode of the invention adopts a planar microstrip differential feed structure, so that the thickness of the substrate is smaller than that of the substrateλ gAnd/4, common-mode noise can be effectively inhibited, a multi-mode transmission passband is formed finally, inherent common-mode inhibition can be realized by the laminated HMSIW structure of the filter, and mode selection can be performed, so that the actual requirements of a differential communication system are met.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the embodiments, and various equivalent modifications can be made within the technical spirit of the present invention, and the scope of the present invention is also within the scope of the present invention.
Claims (9)
1. A three-mode HMSIW balanced band-pass filter with common-mode rejection and compact structure is characterized in that: the differential feed structure comprises three layers of dielectric substrates, an HMSIW resonant cavity, a perturbation metal through hole array and a differential feed structure;
the three-layer medium substrate comprises an upper layer medium substrate, a middle layer medium substrate and a lower layer medium substrate which are arranged in a laminated manner from top to bottom;
the HMSIW resonant cavity is in an isosceles right triangle shape and comprises an upper metal layer, a lower metal layer and an L-shaped metal through hole array;
the upper metal layer is printed between the upper medium substrate and the middle medium substrate, and the lower metal layer is printed between the middle medium substrate and the lower medium substrate; etching the L-shaped metal through hole array on the middle-layer medium substrate;
the perturbation metal through hole array comprises a semi-annular perturbation metal through hole array which is etched on the middle-layer medium substrate and is positioned in the HMSIW resonant cavity, and the circle center of the semi-annular perturbation metal through hole array is positioned at the center of the bevel edge of the HMSIW resonant cavity;
the perturbation metal through hole array also comprises two strip-shaped perturbation metal through hole arrays which are symmetrical about the symmetrical axis of the HMSIW resonant cavity; the two strip-shaped perturbation metal through hole arrays are respectively vertical to two waists of the HMSIW resonant cavity, and one ends of the two strip-shaped perturbation metal through hole arrays are connected with the semi-annular perturbation metal through hole array;
the differential feed structure is arranged on two right-angle sides of the HMSIW resonant cavity and used for differentially feeding the HMSIW resonant cavity.
2. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 1, characterized in that: the length of the two strip-shaped perturbation metal through hole arrays isl 1=7.7mm, and the included angle between each strip-shaped perturbation metal through hole array and the inclined edge of the HMSIW resonant cavity is equal toθ=45°。
3. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 1, characterized in that: the differential feed structure comprises two upper layer feed ports and two lower layer feed ports;
the two upper-layer feed ports are arranged on the upper-layer dielectric substrate and are symmetrical about the symmetry axis of the HMSIW resonant cavity;
the two lower-layer feed ports are arranged on the lower-layer dielectric substrate and are symmetrical about the symmetry axis of the HMSIW resonant cavity;
the two upper layer feed ports and the two lower layer feed ports form two sets of microstrip-probe feed structures.
4. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 3, characterized in that: two probe positions of the two groups of microstrip-probe feed structures are symmetrical about a symmetry axis of the HMSIW resonant cavity, and the distance between each probe position and two waists of the HMSIW resonant cavity is respectivelyl 2=48.2mm，l 3=13.2mm。
5. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 3, characterized in that: the three layers of medium substrates comprise an isosceles right triangle plate and two rectangular plates; the two rectangular plates are vertically arranged on two waists of the isosceles right-angle triangular plate and are symmetrical about the symmetry axis of the isosceles right-angle triangular plate; the feed access ends of the differential feed structures are arranged on the two rectangular plates.
6. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 1, characterized in that: radius of semi-annular perturbation metal through hole arrayr 1=8.2mm, length of the waist of the HMSIW resonatorl=62.4mm。
7. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 1, characterized in that: diameter of metal through hole in L-shaped metal through hole array and perturbation metal through hole arrayd=0.8mm, inter-hole spacingp=1.2mm。
8. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 1, characterized in that: the thickness of the middle layer medium substrate is less thanλ g/4, whereinλ gIndicating the operating frequency wavelength of the balanced bandpass filter.
9. The three-mode HMSIW balanced bandpass filter with common-mode rejection and compact structure according to claim 8, wherein: the three-layer dielectric substrate is of a Rogers RT/Duroid5880 type, the relative dielectric constant is 2.2, the thickness is 0.508mm, and the loss tangent is 0.0009.
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