CN1123655C - New structure multi-performance BaTiO3Superlattice materials - Google Patents
New structure multi-performance BaTiO3Superlattice materials Download PDFInfo
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- CN1123655C CN1123655C CN 99102863 CN99102863A CN1123655C CN 1123655 C CN1123655 C CN 1123655C CN 99102863 CN99102863 CN 99102863 CN 99102863 A CN99102863 A CN 99102863A CN 1123655 C CN1123655 C CN 1123655C
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- batio
- mgo
- laalo
- zro
- crystal lattice
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- 239000000463 material Substances 0.000 title claims abstract description 77
- 229910002367 SrTiO Inorganic materials 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 229910002244 LaAlO3 Inorganic materials 0.000 abstract 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention belongs to the field of film science. The present invention provides a composition made of BaTiO3And MgO, SrTiO3、LaAlO3、ZrO2、Al2O3Five materials are formed into a sandwich type and are periodically laminated by A, B two-layer structures or C, D, E three-layer structures, and the multi-functional BaTiO of a plurality of new structures with high dielectric constant, large nonlinear optical coefficient and good ferroelectric property3A superlattice material.
Description
Technical field
The invention belongs to the membrane science field, particularly a kind of many performances of new texture BaTiO
3Super crystal lattice material.
Background technology
The film of high-k is vital for the raising and the improvement of performances such as the exploration of new unit and microelectronic device, optical material with big nonlinear factor has important use aspect optics, have thin-film material well ferroelectric, thermoelectricity capability and also be widely used at aspects such as storer and detectors.As document: 1.M.Sayer and K.Screenivas, Science, Vol.247,1056 (1990); 2.Gene H.Haertling, J.Vac.Sci.Technol.A, 9 (3), 414 (1991).Hitoshi Tabato of Osaka, Japan university and Tomoji Kanwai utilize (Sr, Ca) TiO of pulse laser method preparation
3/ (Ba, Sr) TiO
3Artificial super crystal lattice material, specific inductivity reaches 900, as document 3, H.Tabata and T.Kawai, Appl.Phys.Lett.70 (3), 321 (1997).BaTiO with the laser molecular beam epitaxy preparation
3/ SrTiO
3Super crystal lattice material has big optical nonlinearity coefficient, as document 4, and pavilion Lin Zhen etc., Chinese science (A) 28,1107 (1998).People estimate that the ferroelectric superlattice material not only has the superinsulation characteristic, and may have super ferroelectric properties.
Summary of the invention
The objective of the invention is to: provide several from BaTiO
3Have high-k, big nonlinear optical coefficients, a good ferroelectric many performances BaTiO with five kinds of materials are formed different structures
3Super crystal lattice material.
Many performances BaTiO provided by the invention
3Super crystal lattice material is achieved in that and uses laser molecular beam epitaxy or pulsed laser deposition or magnetron sputtering film-forming method, BaTiO
3Material and MgO, SrTiO
3, LaAlO
3, ZrO
2, Al
2O
3Form with the periodically folded system of the film of different bed thickness Deng material, its structure mainly contains following two kinds:
One, the superlattice of two kinds of material preparations:
BaTiO by two kinds of material preparations
3Superstructure as shown in Figure 1, at first growth thickness is the A material film of m on monocrystal chip, and then growth thickness is that the B material of n is thin on the A material film, periodically growing and preparing becomes superlattice on demand.As A (or B) thin-film material is BaTiO
3, then B (or A) thin-film material is MgO or LaAlO
3Or ZrO
2Or Al
2O
3Wherein thickness m and n can equate, also can be unequal.
Two, the superlattice of three kinds of material preparations:
BaTiO by three kinds of material preparations
3Superstructure as shown in Figure 2, at first growth thickness is the C material film of i on monocrystal chip, growth thickness is the D material of j on the C material film then, and growth thickness is the E material film of k on the D material film, and periodically growing and preparing becomes superlattice on demand.As the C thin-film material is BaTiO
3, then D and E thin-film material are selected MgO, SrTiO for use
3, LaAlO
3, ZrO
2, Al
2O
3In two kinds of materials; If the D thin-film material is BaTiO
3, then C and E thin-film material are selected MgO, SrTiO for use
3, LaAlO
3, ZrO
2, Al
2O
3In two kinds of materials; If the E thin-film material is BaTiO
3, then C and D thin-film material are selected MgO, SrTiO for use
3, LaAlO
3, ZrO
2, Al
2O
3In two kinds of materials.Thickness i wherein, j, k can equate, also can be unequal.
Prepare above-mentioned two kinds of structure BaTiO
3Superlattice, its substrate can be MgO, BaTiO
3, SrTiO
3, LaAlO
3, ZrO
2, Al
2O
3Deng monocrystal chip, also can be adulterated above-mentioned monocrystal chip.BaTiO
3Also can be the BaTiO that mixes Ce and mix Rh
3The used various targets of preparation superlattice can be the monocrystalline targets, also can be the agglomerating polycrystal targets.The thick m of every tunic, n, I, the scope that j, k select from 4 to 1000 .The cycle number average of the folded system of two kinds of structures can be a number of cycles from 1-1000 cycle, also can be non-number of cycles.
With film-forming methods such as laser molecular beam epitaxy, pulsed laser deposition or magnetron sputterings, press above-mentioned two kinds of structures BaTiO
3With MgO, SrTiO
3, LaAlO
3, ZrO
2, Al
2O
3In the BaTiO of one or both laminations preparation in material sandwich style ground cycle
3Super crystal lattice material, since the effect of the aspects such as crystal lattice stress between layer and the layer, prepared BaTiO
3Super crystal lattice material has over-all propertieies such as high specific inductivity, big nonlinear optical coefficients and excellent ferroelectric.
The present invention will be further described below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is the superstructure figure of two kinds of material preparations of the present invention
Fig. 2 is the superstructure figure of three kinds of material preparations of the present invention
Embodiment
Embodiment 1:
Use the laser molecular beam epitaxy method, select BaTiO for use
3, MgO monocrystalline target and SrTiO
3Monocrystal chip prepares the BaTiO of double-layer structure shown in Figure 1
3(20 )/MgO (20 ) superlattice, material (A) is BaTiO
3, material B is MgO, BaTiO
3(A) Ceng thickness m=20 , the thickness n=20 of MgO (B) layer.
Embodiment 2:
Press embodiment 1 and make BaTiO
3Use the BaTiO that mixes Ce instead
3Target prepares the BaTiO that 25 cycles mix Ce
3(20 )/MgO (20 ) superlattice.
Embodiment 3:
Press embodiment 2 and make BaTiO
3(A) Ceng thickness m=50 , the thickness n=10 of MgO (B) layer prepares the BaTiO that 30.5 cycles mix Rh
3(50 )/MgO (10 ) superlattice.
Embodiment 4:
Press embodiment 1 and make, use LaAlO
3Target replaces the MgO target, preparation BaTiO
3(100 )/LaAlO
3(100 ) superlattice.
Embodiment 5:
Use the laser deposition film-forming method, use ZrO
2Substrate replaces SrTiO
3Substrate is pressed embodiment 2 and is made.
Embodiment 6:
Use agglomerating BaTiO
3Pressing embodiment 1 with the MgO polycrystal target makes.
Embodiment 7:
Use the magnetron sputtering film-forming method, press embodiment 2 and make.
Embodiment 8:
Use the laser molecular beam epitaxy method, select BaTiO for use
3, SrTiO
3, MgO monocrystalline target and SrTiO
3Substrate prepares the superlattice of three-decker shown in Figure 2.Material (C) is MgO, thickness i=50 ; Material (D) is SrTiO
3, thickness j=50 ; Material (E) is BaTiO
3, thickness k=50 .Be total to the BaTiIO in 15 cycles of extension
3(50 )/SrTiO
3The superlattice of (50 )/MgO (50 );
Embodiment 9:
Use LaAlO
3The monocrystalline target replaces MgO, presses embodiment 8 and makes the BaTiO in 20 cycles of preparation
3(50 )/SrTiO
3(50 )/LaAlO
3(50 ) superlattice.
Embodiment 10:
Use the pulsed laser deposition film-forming method, select ZrO for use
2, Al
2O
3With the BaTiO that mixes Ce
3The monocrystalline target prepares three-decker superlattice shown in Figure 2.Material (C) is ZrO
2, bed thickness i=100 ; Material (D) is BaTiO
3, bed thickness j=500 ; Material (E) is Al
2O
3, bed thickness k=200 , the ZrO in long 10 cycles of symbiosis
2(100 )/BaTiO
3(500 )/Al
2O
3The superlattice of (200 ).
Embodiment 11:
Use agglomerating BaTiO
3And SrTiO
3Polycrystal target replaces the monocrystalline target, presses embodiment 8 and makes.
Embodiment 12:
Press embodiment 8 and make, preparation material (C) MgO bed thickness i=12 , material (D) SrTiO
3Bed thickness j=4 , material (E) BaTiO
3The MgO in 200 cycles of bed thickness k=16 (12 )/SrTiO
3(4 )/BaTiO
3(16 ) superlattice.
Embodiment 13:
Press embodiment 2 and make, use LaAlO
3Target replaces the MgO target, prepares the BaTiO that 1 cycle mixes Ce
3(1000 )/LaAlO
3The superlattice of (1000 ).
Embodiment 14:
Press embodiment 8 and make, use ZrO
2Target replaces SrTiO
2Target is used Al
2O
3Target replaces the MgO target, the BaTiO in 1000 cycles of preparation
3(4 )/ZrO
2(8 )/Al
2O
3The superlattice of (12 ).
Claims (6)
1. BaTiO
3Super crystal lattice material is characterized in that:
This BaTiO
3Super crystal lattice material is to utilize laser molecular beam epitaxy, and the technology and the method for preparation such as pulsed laser deposition or magnetron sputtering film are BaTiO
3With a kind of MgO that is selected from, ZrO
2, LaAlO
3Or Al
2O
3The material sandwich style with A, B double-layer structure or BaTiO
3With two kinds be selected from MgO, SrTiO
3, ZrO
2, LaAlO
3Or Al
2O
3Forming of sandwich style with folded system of C, D, E three-decker cycle, wherein, the thickness m of A, B, C, D, E, n, i, j, the variation range of k be from 4 to 1000 , the cycle of superlattice lamination is from 1 to 1000.
2. by the described BaTiO of claim 1
3Super crystal lattice material is characterized in that, the lamination of different samples can replace in the super crystal lattice material: in double-layer structure, work as BaTiO
3When being materials A, MgO then, ZrO
2, LaAlO
3, Al
2O
3In any be material B; Work as BaTiO
3When being material B, any in then above-mentioned other 4 kinds of materials is materials A; For three-decker, work as BaTiO
3In different samples, be respectively material C, material D, or during material E, MgO then, ZrO
2, LaAlO
3, Al
2O
3In choose two kinds and be respectively material D, E or material C, E or material C, D.
3. by the described BaTiO of claim 1
3Super crystal lattice material is characterized in that, used target can be a monocrystal material, also can be polycrystalline material.
4. by the described BaTiO of claim 1
3Super crystal lattice material is characterized in that, used BaTiO
3, MgO, ZrO
2, LaAlO
3, Al
2O
3Material is adulterated.
5. by the described BaTiO of claim 1
3Super crystal lattice material is characterized in that, two-layer and three-decker superlattice, and its lamination can be a number of cycles, also can be non-number of cycles.
6. by the described BaTiO of claim 1
3Super crystal lattice material is characterized in that, used substrate is SrTiO
3, BaTiO
3, MgO, ZrO
2, LaAlO
3, Al
2O
3Monocrystal chip also can be adulterated above-mentioned six kinds of monocrystal chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99102863 CN1123655C (en) | 1999-03-10 | 1999-03-10 | New structure multi-performance BaTiO3Superlattice materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99102863 CN1123655C (en) | 1999-03-10 | 1999-03-10 | New structure multi-performance BaTiO3Superlattice materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1266912A CN1266912A (en) | 2000-09-20 |
| CN1123655C true CN1123655C (en) | 2003-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99102863 Expired - Fee Related CN1123655C (en) | 1999-03-10 | 1999-03-10 | New structure multi-performance BaTiO3Superlattice materials |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100398690C (en) * | 2005-03-08 | 2008-07-02 | 电子科技大学 | Displacement ferroelectric super-lattice thin film material having stress-limiting layer and preparation method thereof |
| CN101210311B (en) * | 2006-12-31 | 2010-06-16 | 中国科学院物理研究所 | System for preparing composite film |
| CN102693837B (en) * | 2011-03-23 | 2015-11-18 | 成都锐华光电技术有限责任公司 | A kind of have electric capacity of cycle laminated iron conductive film and preparation method thereof |
| CN108531857B (en) * | 2017-12-29 | 2020-01-07 | 西安电子科技大学 | Method for regulating and controlling residual polarization and coercive field of barium titanate single crystal film by utilizing bending deformation |
| CN109825872B (en) * | 2019-03-01 | 2020-09-25 | 宝鸡文理学院 | One-dimensional high-performance BaTiO3/SrTiO3Controllable preparation method of nano composite mesoscopic crystal |
| CN110527952A (en) * | 2019-07-26 | 2019-12-03 | 沈阳工业大学 | A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof |
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1999
- 1999-03-10 CN CN 99102863 patent/CN1123655C/en not_active Expired - Fee Related
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|---|---|
| CN1266912A (en) | 2000-09-20 |
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