CN112363253A - Anti-reflection blue light barrier film, anti-reflection full light barrier film, quantum dot optical film and application thereof - Google Patents

Anti-reflection blue light barrier film, anti-reflection full light barrier film, quantum dot optical film and application thereof Download PDF

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CN112363253A
CN112363253A CN202011376565.1A CN202011376565A CN112363253A CN 112363253 A CN112363253 A CN 112363253A CN 202011376565 A CN202011376565 A CN 202011376565A CN 112363253 A CN112363253 A CN 112363253A
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layer
quantum dot
reflection
barrier film
blue light
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郑威
张志宽
孙小卫
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Shenzhen Planck Innovation Technology Co ltd
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Shenzhen Planck Innovation Technology Co ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light

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  • Nonlinear Science (AREA)
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Abstract

The invention provides an anti-reflection blue light barrier film, an anti-reflection all-optical barrier film, a quantum dot optical film and application thereof2O5Layer, first SiO2Layer, second Nb2O5Layer and second SiO2The layers are positioned in the anti-reflection blue light AR layers on the upper surface and the lower surface of the substrate layer and are respectively provided with a first Nb2O5The layer is in contact with the substrate layer. The anti-reflection all-optical barrier film comprises a substrate layer and an anti-reflection all-optical AR layer positioned on the lower surface of the substrate layer, wherein the anti-reflection all-optical AR layer comprises Nb laminated together2O5Layer and SiO2Layer of said antireflective all-optical ARNb in layer2O5The layer is in contact with the substrate layer. The quantum dot optical film combines the anti-reflection blue light barrier film and the anti-reflection all-optical barrier film, so that the transmittance of the whole quantum dot optical film is improved by about 10% compared with the original transmittance.

Description

Anti-reflection blue light barrier film, anti-reflection full light barrier film, quantum dot optical film and application thereof
Technical Field
The invention belongs to the technical field of optical materials, and relates to an anti-reflection blue light barrier film, an anti-reflection full-light barrier film, a quantum dot optical film and application thereof.
Background
High color gamut televisions are rapidly developing and increasingly in demand; the quantum dot optical film is a novel photoluminescence functional optical film material, in the photoluminescence application direction, a high-frequency spectrum blue LED is adopted to replace a traditional white light LED light source, the quantum dot material can be excited to generate light with different wavelengths under the irradiation of the high-frequency light source, and the color of the needed light can be adjusted and synthesized by adjusting the type and the size of the quantum dot material. Therefore, only one layer of quantum dot optical membrane using the quantum dot technology is needed to be added in the common liquid crystal display, the liquid crystal display cost is not increased or decreased remarkably, the color gamut can be improved to more than 85%, the color and the picture are more gorgeous and vivid, and the display effect of the OLED is achieved or even surpassed.
In order to solve the problem of the water and oxygen resistance of a quantum dot material, a quantum dot optical film in the prior art is coated with a quantum dot colloidal solution by two barrier films, so that the service life of quantum dots is prolonged, the cost of the optical film is increased, the light transmittance of the optical film is low, the water and oxygen resistance is not excellent, and the difficulty in preparing the quantum dot optical film for backlight display is always high.
The existing quantum dot optical film production process flow is that firstly, quantum dot materials are distributed in a glue solution matrix, after glue mixing is completed, primary or secondary precision coating forming is carried out between two layers of PET barrier films, the two layers of barrier films adopt the same film coating process and film system, and after curing, film coating is carried out, so that the quantum dot optical film can be formed.
The quantum dot material has the transmittance of about 90 percent due to the material characteristics; although the transmittance of the single-layer barrier film is continuously improved, the thickness of the PET is reduced, and the barrier film system is continuously optimized, the transmittance of the single-layer barrier film can reach about 85% at the maximum wavelength of 450nm, the transmittance of the all-optical system is about 90%, and the final transmittance of the quantum dot optical film is about 85% by 90% by 68.85% through the stacking of three layers of materials, so that the utilization rate of light is very low, and the color expression is not ideal enough.
Therefore, in the art, it is desired to develop a quantum dot optical film having a higher transmittance.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide an anti-reflection blue light barrier film, an anti-reflection all-optical barrier film, a quantum dot optical film and application thereof. The quantum dot optical film provided by the invention can ensure the water and oxygen resistance of the optical film and solve the problem of low transmittance.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides an anti-reflection blue light barrier film, which comprises a substrate layer and anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer, wherein the anti-reflection blue light AR layers structurally comprise first Nb layers which are sequentially laminated2O5Layer, first SiO2Layer, second Nb2O5Layer and second SiO2The layers are first Nb in the anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer2O5The layer is in contact with the substrate layer.
In the invention, the anti-reflection blue light barrier film adopts an anti-reflection blue (400-500 nm) AR film system, and the light source adopts a blue light source, so that the wavelength range of a generally produced blue light LED is 465-470nm, and the peak value is 467.5 nm. Therefore, the barrier film of the barrier layer facing the light source only increases the transmittance of blue light, and although the upper surface of the PET also adopts an anti-reflection blue AR layer, the transmittance of the blue light is increased, but the main function is to reduce red light and green light reflected from the quantum dot material.
The anti-reflection blue light barrier film disclosed by the invention selectively improves the blue light transmittance of a 400-470 nm wavelength band from 85% to 90-95%.
Preferably, the first Nb2O5The thickness of the layer is 80 to 90nm, for example 80nm (467nm wavelength transmittance 94%), 82nm, 84nm, 85nm (467nm wavelength transmittance 97%), 87nm, 89nm or 90(467nm wavelength transmittance 94%) nm. Such asIf the thickness of the layer is less than 80nm or more than 90nm, the anti-reflection blue light effect is weakened, and the film thickness is reduced, and meanwhile, the water vapor barrier effect is properly reduced.
Preferably, the first SiO2The thickness of the layer is 40 to 50nm, for example, 40 (95% transmittance at 467nm wavelength), 43nm, 45nm (98% transmittance at 467nm wavelength), 48nm or 50nm (95% transmittance at 467nm wavelength). If the thickness of the layer is less than 40nm or more than 50nm, the anti-reflection blue light effect is reduced, and the film thickness is reduced, and the water vapor barrier effect is properly reduced.
Preferably, the second Nb2O5The thickness of the layer is 80 to 90nm, for example 80nm (467nm wavelength transmittance 94%), 82nm, 84nm, 85nm (467nm wavelength transmittance 97%), 87nm, 89nm or 90(467nm wavelength transmittance 94%) nm. If the thickness of the layer is less than 80nm or more than 90nm, the anti-reflection blue light effect is reduced, and the film thickness is reduced while the water vapor barrier effect is properly reduced.
Preferably, the second SiO2The thickness of the layer is 40 to 50nm, for example, 40 (95% transmittance at 467nm wavelength), 43nm, 45nm (98% transmittance at 467nm wavelength), 48nm or 50nm (95% transmittance at 467nm wavelength). If the thickness of the layer is less than 40nm or more than 50nm, the anti-reflection blue light effect is reduced, and the film thickness is reduced, and the water vapor barrier effect is properly reduced.
Preferably, the material of the substrate layer is any one of PET (polyethylene terephthalate), PE (polyethylene), PC (polycarbonate), PP (polypropylene), PI (polyimide), COC (cyclic olefin copolymer), or PMMA (polymethyl methacrylate).
Preferably, the thickness of the substrate layer is 10 to 300 μm, such as 10 μm, 20 μm, 30 μm, 50 μm, 80 μm, 100 μm, 150 μm, 200 μm, 250 μm or 300 μm.
The anti-reflection blue light barrier film has the reflectivity of 0-3% in the wavelength range of 430-470 nm in the blue light section, namely the transmittance can reach more than 97%, and the transmittance of light with the wavelength of 450nm is almost close to 100%.
In the invention, the thickness of the antireflection film in the antireflection blue light barrier film is designed to be equal to one fourth of the wavelength of blue light in the antireflection film, so that the blue light reflected back from two sides of the film interferes and is counteracted with each other, so that the transmission energy of the blue light is increased, and the reflection capability is reduced, which is the realization principle of the antireflection blue light AR layer in the invention.
The antireflection film can realize the energy redistribution of the reflected light and the transmitted light of the optical surface, and the energy of the transmitted light of a certain wavelength is increased and the energy of the reflected light is reduced as a result of the distribution. Conventional antireflection films do not maximize the intensity of transmitted light, that is, minimize reflected light. Mainly, light to be anti-reflection is not monochromatic but has a certain bandwidth, and one anti-reflection film only has a complete anti-reflection effect on monochromatic light with a certain wavelength. Therefore, the anti-reflection effect is improved by a multilayer coating technology, and the designed anti-reflection blue light barrier film also increases the line width, namely the bandwidth, of transmitted light.
In the invention, the anti-reflection blue light barrier film is obtained by a multilayer coating technology. The method comprises the steps of selecting targets (namely selecting an Nb target and an Si target) by controlling magnetron continuous coating equipment, designing the targets (generally, 4-10 target positions can be designed, and the positions of the targets can be designed into an Nb target, an Si target, an Nb target and an Si target), selecting a power supply (the Nb target uses a direct-current power supply, the Si target is a ceramic target and needs an intermediate frequency or radio frequency power supply), selecting process gases (working gas is argon, reaction gas is oxygen), controlling coating time (the deposition time required by each target position is calculated according to the deposition rate, and the deposition rate is obtained by testing the film thickness in advance by using a step profiler, namely the required film thickness/deposition rate is the deposition time), and obtaining the anti-reflection blue light barrier film.
In the invention, the niobium oxide, the silicon oxide and the PET have good adhesive force and have the function of blocking water and oxygen, and meanwhile, after the optical film is optimized in structure and a special antireflection film is used, the transmittance of the antireflection all-optical quantum dot optical film barrier layer is improved from 85% to about 92%, the absolute value of the transmittance is increased by 7%, the transmittance of the antireflection blue-light quantum dot optical film barrier layer is improved from 85% to about 94%, and the absolute value of the transmittance is increased by 9%. The total transmittance of the two-layer barrier film is increased from 85% × 85% to 72.25% to 92% × 94% to 86.48%, and the light utilization rate is increased by 16%.
In a second aspect, the invention provides an anti-reflection all-optical barrier film, which comprises a substrate layer and an anti-reflection all-optical AR layer positioned on the lower surface of the substrate layer, wherein the anti-reflection all-optical AR layer comprises Nb layers which are laminated together2O5Layer and SiO2Layer of Nb in said antireflective all-optical AR layer2O5The layer is in contact with the substrate layer.
The transmittance of the anti-reflection full optical barrier film is improved from 90% to about 95%.
Preferably, the Nb2O5The layer has a thickness of 85 to 95nm, for example 85nm, 87nm, 88nm, 90nm, 93nm or 95 nm. If the thickness of the layer is less than 85nm or more than 95nm, the anti-reflection full light effect is weakened, and the water vapor barrier effect is properly reduced while the film thickness is reduced.
Preferably, the SiO2The thickness of the layer is 70-80 nm, such as 70nm, 73nm, 75nm, 78nm or 80 nm. If the thickness of the layer is less than 70nm or more than 80nm, the total light reflection effect is reduced, and the water vapor barrier effect is properly reduced while the film thickness is reduced.
Preferably, the material of the substrate layer is PET (polyethylene terephthalate), PE (polyethylene), PC (polycarbonate), PP (polypropylene), PI (polyimide), COC (cyclic olefin copolymer), PMMA (polymethyl methacrylate).
Preferably, the thickness of the substrate layer is 10 to 300 μm, such as 10 μm, 20 μm, 30 μm, 50 μm, 80 μm, 100 μm, 150 μm, 200 μm, 250 μm or 300 μm.
The anti-reflection all-optical system barrier film can be realized by physical vapor deposition, a physical magnetron sputtering or evaporation coating method is adopted, the structure of the film layer can be accurately controlled by the coating process setting and the target design of the target material, and the required thickness can be realized by controlling the sputtering time.
In a third aspect, the present invention provides a quantum dot optical film, where the quantum dot optical film includes the anti-reflection blue light barrier film of the first aspect, a quantum dot water layer located on the upper surface of the anti-reflection blue light barrier film, and the anti-reflection full optical system barrier film of the second aspect located on the upper surface of the quantum dot water layer, and an anti-reflection full optical AR layer in the anti-reflection full optical system barrier film is in contact with the quantum dot water layer.
Preferably, the quantum dot glue water layer comprises a substrate layer and a quantum dot glue polymer layer coated on the surface of the substrate layer.
The preparation method of the quantum dot water layer comprises the following steps: and uniformly mixing the quantum dot material and the glue polymer to obtain glue, removing bubbles, and coating the glue on a base material to prepare a film.
Preferably, the quantum dots are made of CdSe, CdTe, CdS, ZnSe, CdTe, CuInS, InP, CuInSe or CdZnSSe or a combination of at least two of the CdSe, the CdTe, the CdS, the ZnSe, the CdTe, the CuInS, the InP, the CuInSe or the CdZnSSe.
Preferably, the glue polymer is any one of aliphatic polyurethane acrylate, bisphenol A epoxy resin or organic silicon resin.
Preferably, the thickness of the base material layer in the quantum dot water layer is 10-300 μm; for example 10 μm, 20 μm, 30 μm, 50 μm, 80 μm, 100 μm, 150 μm, 200 μm, 250 μm or 300 μm.
Preferably, the thickness of the quantum dot water-dropping polymer layer is 20-300 μm, such as 20 μm, 30 μm, 50 μm, 80 μm, 100 μm, 150 μm, 200 μm, 250 μm or 300 μm.
In the invention, the quantum dot optical film is combined with an anti-reflection blue light barrier film and an anti-reflection full optical system barrier film, because a blue light source is adopted as a light source, the barrier film of the barrier layer facing the light source only reflects blue light, an anti-reflection blue light AR layer is designed through a film system, and the blue light transmittance of a 400-450 nm wavelength band is selectively improved from 85% to 90-95%. After passing through the quantum dot material, the light enters another barrier film, and the light is reflected by the anti-reflection all-optical AR layer designed by a film system, so that the transmittance is improved from 90% to about 95%. Thus, the transmittance of the whole quantum dot optical film is improved by about 10% compared with the original transmittance.
In a fourth aspect, the present invention provides a quantum dot display device comprising the quantum dot optical film as described above.
Preferably, the quantum dot display device comprises a mobile phone display screen, a television display, a notebook computer display, a vehicle-mounted display or an outdoor advertising board and the like.
Preferably, the quantum dot display device comprises a light guide plate, the quantum dot optical film, the lower brightness enhancement film, the upper brightness enhancement film and a liquid crystal panel from bottom to top.
The quantum dot optical film of the invention improves the light transmittance, and simultaneously, the power of the LED light source is correspondingly reduced when the same display brightness requirement is met, for example, 18 mobile phone LED lamps are provided, the original set current is 40mA, and the power is 0.04A multiplied by 18 multiplied by 3V which is 2.16W; after the quantum dot film with improved transmittance is replaced, under the condition of the same brightness, the current is reduced from 40mA to 35mA, the power is 0.035A multiplied by 18 multiplied by 3V to 1.89W, and the power consumption of the LED is correspondingly reduced by about 12.5%.
Compared with the prior art, the invention has the following beneficial effects:
(1) the anti-reflection blue light barrier film has the reflectivity of 0-3% in the wavelength range of 430-470 nm in the blue light section, namely the transmittance can reach more than 97%, and the transmittance of light with the wavelength of 450nm is almost close to 100%.
(2) The transmittance of the anti-reflection full optical barrier film is improved from 90 percent to about 95 percent.
(3) The quantum dot optical film is combined with an anti-reflection blue light barrier film and an anti-reflection all-optical barrier film, so that the transmittance of the whole quantum dot optical film is improved by about 10% compared with the original transmittance.
Drawings
FIG. 1 is a schematic structural view of an anti-reflection blue light barrier film of the present invention, wherein 11 is an anti-reflection blue light AR layer, 12 is a substrate layer, and 13 is an anti-reflection blue light AR layer;
FIG. 2 is a schematic structural diagram of an anti-reflection blue AR layer of the present invention, wherein 1 is a first Nb2O5Layer 2 is a first SiO2Layer, 3 is a second Nb2O5Layer, 4 is a second SiO2A layer;
FIG. 3 is a schematic structural view of an antireflection all-optical barrier film of the present invention, in which 31 is an antireflection all-optical AR layer, and 32 is a substrate layer;
FIG. 4 is a schematic structural view of an anti-reflection all-optical AR layer of the present invention, wherein 5 is Nb2O5Layer 6 is SiO2A layer;
fig. 5 is a schematic structural view of the quantum dot optical film of the present invention, wherein 11 is an anti-reflection blue light AR layer, 12 is a substrate layer, 13 is an anti-reflection blue light AR layer, 31 is an anti-reflection all-optical AR layer, 32 is a substrate layer, and 2 is a quantum dot water-dispensing layer;
fig. 6 is a schematic structural diagram of a quantum dot display device according to the present invention, wherein 61 is a light guide plate, 62 is a quantum dot optical film, 63 is a lower brightness enhancement film, 64 is an upper brightness enhancement film, and 65 is a liquid crystal panel;
FIG. 7 is a graph showing the results of reflectivity measurements for an anti-reflective blue light blocking film;
FIG. 8 is a graph showing the results of testing the reflectivity of the antireflection coating.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
In this embodiment, an anti-reflection blue light barrier film is provided, where as shown in fig. 1, the anti-reflection blue light barrier film includes a substrate layer 12, an anti-reflection blue light AR layer 13 located on an upper surface of the substrate layer, and an anti-reflection blue light AR layer 11 located on a lower surface of the substrate layer, and a structure of the anti-reflection blue light AR layer includes, as shown in fig. 2, a first Nb layer and a first Nb layer that are sequentially stacked2O5Layer 1, first SiO2Layer 2, second Nb2O5Layer 3 and second SiO2Layer 4, the anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer are all first Nb2O5Layer 1 is in contact with the substrate layer, which is a PET layer.
The first Nb2O5The thickness of the layer is 85nm, the first SiO2The thickness of the layer is 45nm, and the second Nb2O5The thickness of the layer is 85nm, the second SiO2The thickness of the layer was 45nmThe thickness of the wood layer was 80 μm.
In this embodiment, the structure of the anti-reflection all-optical barrier film is shown in fig. 3, and includes a substrate layer 32 and an anti-reflection all-optical AR layer 31 located on the lower surface of the substrate layer 32, and the structure of the anti-reflection all-optical AR layer 31 includes Nb stacked together as shown in fig. 42O5Layer 5 and SiO2Layer 6 of Nb in the antireflective all-optical AR layer2O5Layer 5 is in contact with a substrate layer 32, which is a PET layer, Nb2O5The thickness of the layer is 90nm, the SiO2The thickness of the layer was 75nm and the thickness of the substrate layer was 80 μm.
The present embodiment further provides a quantum dot optical film, the structure of which is shown in fig. 5, and the quantum dot optical film includes the anti-reflection blue light barrier film, a quantum dot water layer 2 located on the upper surface of the anti-reflection blue light barrier film, and the anti-reflection all-optical barrier film located on the upper surface of the quantum dot water layer, where the anti-reflection all-optical AR layer 31 in the anti-reflection all-optical barrier film contacts the quantum dot water layer. The arrow direction in the figure represents the incident direction of the light source.
The quantum dot glue water layer comprises a substrate layer and a quantum dot glue polymer layer (coating thickness is 100 mu m) coated on the surface of the substrate layer (PET layer, thickness of the substrate layer is 80 mu m).
The preparation method of the quantum dot water layer comprises the following steps: and uniformly mixing the quantum dot material and the glue polymer to obtain glue, removing bubbles, and coating the glue on a base material to prepare a film.
Preferably, the quantum dot is a CdSe quantum dot material.
Preferably, the glue polymer is aliphatic urethane acrylate.
Example 2
In this embodiment, an anti-reflection blue light barrier film is provided, where as shown in fig. 1, the anti-reflection blue light barrier film includes a substrate layer 12, an anti-reflection blue light AR layer 13 located on an upper surface of the substrate layer, and an anti-reflection blue light AR layer 11 located on a lower surface of the substrate layer, and a structure of the anti-reflection blue light AR layer includes, as shown in fig. 2, a first Nb layer and a first Nb layer that are sequentially stacked2O5Layer 1, secondSiO 22 Layer 2, second Nb2O5Layer 3 and second SiO2Layer 4, the anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer are all first Nb2O5Layer 1 is in contact with the substrate layer, which is a PE layer.
The first Nb2O5The thickness of the layer is 85nm, the first SiO2The thickness of the layer is 45nm, and the second Nb2O5The thickness of the layer is 85nm, the second SiO2The thickness of the layer was 45nm and the thickness of the substrate layer was 100. mu.m.
In this embodiment, the structure of the anti-reflection all-optical barrier film is shown in fig. 3, and includes a substrate layer 32 and an anti-reflection all-optical AR layer 31 located on the lower surface of the substrate layer 32, and the structure of the anti-reflection all-optical AR layer 31 includes Nb stacked together as shown in fig. 42O5Layer 5 and SiO2Layer 6 of Nb in the antireflective all-optical AR layer2O5Layer 5 is in contact with a substrate layer 32, which is a PE layer, Nb2O5The thickness of the layer is 95nm, the SiO2The thickness of the layer was 75nm and the thickness of the substrate layer was 100. mu.m.
The present embodiment further provides a quantum dot optical film, the structure of which is shown in fig. 5, and the quantum dot optical film includes the anti-reflection blue light barrier film, a quantum dot water layer 2 located on the upper surface of the anti-reflection blue light barrier film, and the anti-reflection all-optical barrier film located on the upper surface of the quantum dot water layer, where the anti-reflection all-optical AR layer 31 in the anti-reflection all-optical barrier film contacts the quantum dot water layer.
The quantum dot glue water layer comprises a substrate layer and a quantum dot glue polymer layer (coating thickness is 100 mu m) coated on the surface of the substrate layer (PE layer, thickness is 100 mu m).
The preparation method of the quantum dot water layer comprises the following steps: and uniformly mixing the quantum dot material and the glue polymer to obtain glue, removing bubbles, and coating the glue on a base material to prepare a film.
Preferably, the quantum dot is a CdTe quantum dot material.
Preferably, the glue polymer is aliphatic urethane acrylate.
Example 3
In this embodiment, an anti-reflection blue light barrier film is provided, where as shown in fig. 1, the anti-reflection blue light barrier film includes a substrate layer 12, an anti-reflection blue light AR layer 13 located on an upper surface of the substrate layer, and an anti-reflection blue light AR layer 11 located on a lower surface of the substrate layer, and a structure of the anti-reflection blue light AR layer includes, as shown in fig. 2, a first Nb layer and a first Nb layer that are sequentially stacked2O5Layer 1, first SiO2Layer 2, second Nb2O5Layer 3 and second SiO2Layer 4, the anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer are all first Nb2O5Layer 1 is in contact with the substrate layer, which is a PET layer.
The first Nb2O5The thickness of the layer is 85nm, the first SiO2The thickness of the layer is 45nm, and the second Nb2O5The thickness of the layer is 85nm, the second SiO2The thickness of the layer was 45nm and the thickness of the substrate layer was 50 μm.
In this embodiment, the structure of the anti-reflection all-optical barrier film is shown in fig. 3, and includes a substrate layer 32 and an anti-reflection all-optical AR layer 31 located on the lower surface of the substrate layer 32, and the structure of the anti-reflection all-optical AR layer 31 includes Nb stacked together as shown in fig. 42O5Layer 5 and SiO2Layer 6 of Nb in the antireflective all-optical AR layer2O5Layer 5 is in contact with a substrate layer 32, which is a PET layer, Nb2O5The thickness of the layer is 90nm, the SiO2The thickness of the layer was 75nm and the thickness of the substrate layer was 80 μm.
The present embodiment further provides a quantum dot optical film, the structure of which is shown in fig. 5, and the quantum dot optical film includes the anti-reflection blue light barrier film, a quantum dot water layer 2 located on the upper surface of the anti-reflection blue light barrier film, and the anti-reflection all-optical barrier film located on the upper surface of the quantum dot water layer, where the anti-reflection all-optical AR layer 31 in the anti-reflection all-optical barrier film contacts the quantum dot water layer.
The quantum dot glue water layer comprises a substrate layer and a quantum dot glue polymer layer (coating thickness is 100 mu m) coated on the surface of the substrate layer (PET layer, thickness of the substrate layer is 80 mu m).
The preparation method of the quantum dot water layer comprises the following steps: and uniformly mixing the quantum dot material and the glue polymer to obtain glue, removing bubbles, and coating the glue on a base material to prepare a film.
Preferably, the quantum dots are made of ZnSe.
Preferably, the glue polymer is aliphatic urethane acrylate.
Example 4
In this embodiment, an anti-reflection blue light barrier film is provided, where as shown in fig. 1, the anti-reflection blue light barrier film includes a substrate layer 12, an anti-reflection blue light AR layer 13 located on an upper surface of the substrate layer, and an anti-reflection blue light AR layer 11 located on a lower surface of the substrate layer, and a structure of the anti-reflection blue light AR layer includes, as shown in fig. 2, a first Nb layer and a first Nb layer that are sequentially stacked2O5Layer 1, first SiO2Layer 2, second Nb2O5Layer 3 and second SiO2Layer 4, the anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer are all first Nb2O5Layer 1 is in contact with the substrate layer, which is a PI layer.
The first Nb2O5The thickness of the layer is 85nm, the first SiO2The thickness of the layer is 45nm, and the second Nb2O5The thickness of the layer is 85nm, the second SiO2The thickness of the layer was 45nm and the thickness of the substrate layer was 150. mu.m.
In this embodiment, the structure of the anti-reflection all-optical barrier film is shown in fig. 3, and includes a substrate layer 32 and an anti-reflection all-optical AR layer 31 located on the lower surface of the substrate layer 32, and the structure of the anti-reflection all-optical AR layer 31 includes Nb stacked together as shown in fig. 42O5Layer 5 and SiO2Layer 6 of Nb in the antireflective all-optical AR layer2O5Layer 5 is in contact with a substrate layer 32, which is a PI layer, Nb2O5The thickness of the layer is 90nm, the SiO2The thickness of the layer was 75nm and the thickness of the substrate layer was 80 μm.
The present embodiment further provides a quantum dot optical film, the structure of which is shown in fig. 5, and the quantum dot optical film includes the anti-reflection blue light barrier film, a quantum dot water layer 2 located on the upper surface of the anti-reflection blue light barrier film, and the anti-reflection all-optical barrier film located on the upper surface of the quantum dot water layer, where the anti-reflection all-optical AR layer 31 in the anti-reflection all-optical barrier film contacts the quantum dot water layer.
The quantum dot glue water layer comprises a substrate layer and a quantum dot glue polymer layer (coating thickness is 100 mu m) coated on the surface of the substrate layer (PI layer, thickness is 150 mu m).
The preparation method of the quantum dot water layer comprises the following steps: and uniformly mixing the quantum dot material and the glue polymer to obtain glue, removing bubbles, and coating the glue on a base material to prepare a film.
Preferably, the quantum dot is a CdSe quantum dot material.
Preferably, the glue polymer is aliphatic urethane acrylate.
Example 5
In this embodiment, an anti-reflection blue light barrier film is provided, where as shown in fig. 1, the anti-reflection blue light barrier film includes a substrate layer 12, an anti-reflection blue light AR layer 13 located on an upper surface of the substrate layer, and an anti-reflection blue light AR layer 11 located on a lower surface of the substrate layer, and a structure of the anti-reflection blue light AR layer includes, as shown in fig. 2, a first Nb layer and a first Nb layer that are sequentially stacked2O5Layer 1, first SiO2Layer 2, second Nb2O5Layer 3 and second SiO2Layer 4, the anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer are all first Nb2O5Layer 1 is in contact with the substrate layer, which is a PP layer.
The first Nb2O5The thickness of the layer is 85nm, the first SiO2The thickness of the layer is 45nm, and the second Nb2O5The thickness of the layer is 85nm, the second SiO2The thickness of the layer was 45nm and the thickness of the substrate layer was 100. mu.m.
In this embodiment, an anti-reflection all-optical barrier film is provided, and the structure of the anti-reflection all-optical barrier film is shown in fig. 3, and includes a substrate layer 32And an anti-reflection all-optical AR layer 31 positioned on the lower surface of the substrate layer 32, wherein the structure of the anti-reflection all-optical AR layer 31 comprises Nb and Nb which are laminated together as shown in figure 42O5Layer 5 and SiO2Layer 6 of Nb in the antireflective all-optical AR layer2O5Layer 5 is in contact with a substrate layer 32, which is a PP layer, Nb2O5The thickness of the layer is 85nm, the SiO2The thickness of the layer was 75nm and the thickness of the substrate layer was 100. mu.m.
The present embodiment further provides a quantum dot optical film, the structure of which is shown in fig. 5, and the quantum dot optical film includes the anti-reflection blue light barrier film, a quantum dot water layer 2 located on the upper surface of the anti-reflection blue light barrier film, and the anti-reflection all-optical barrier film located on the upper surface of the quantum dot water layer, where the anti-reflection all-optical AR layer 31 in the anti-reflection all-optical barrier film contacts the quantum dot water layer.
The quantum dot glue water layer comprises a base material layer and a quantum dot glue polymer layer (coating thickness is 100 mu m) coated on the surface of the base material layer (PP layer, thickness is 100 mu m).
The preparation method of the quantum dot water layer comprises the following steps: and uniformly mixing the quantum dot material and the glue polymer to obtain glue, removing bubbles, and coating the glue on a base material to prepare a film.
Preferably, the quantum dot is a CdSe quantum dot material.
Preferably, the glue polymer is aliphatic urethane acrylate.
Example 6
The quantum dot optical film of example 1 is used in a quantum dot display device, and has a structure as shown in fig. 6, and includes, from bottom to top, a light guide plate 61, a quantum dot optical film 62 as described above, a lower brightness enhancement film 63, an upper brightness enhancement film 64, and a liquid crystal panel 65. Wherein the arrow direction represents the light propagation direction, the three arrows on the light guide plate 61 represent blue light, and the three arrows on the quantum dot optical film 62 represent red, green and blue light respectively from left to right.
Comparative example 1
In this comparative example, a transparent alumina-based barrier film was provided, which structurally included a first alumina barrier film layer, a quantum dot water layer, and a second alumina barrier film layer laminated in this order; the first aluminum oxide barrier film layer and the second aluminum oxide barrier film layer respectively comprise a base material (PET) layer and an aluminum oxide film layer coated on the base material layer, and the aluminum oxide film layer is in contact with the quantum dot water layer.
The thickness of the substrate layer of the first alumina barrier film layer is 10 μm, the thickness of the alumina film layer is 50nm, the quantum dot water layer is the same as the quantum dot water layer in the quantum dot optical film of the embodiment 1, the thickness of the substrate layer of the second alumina barrier film layer is 10 μm, and the thickness of the alumina film layer is 50 nm.
Performance tests were performed on the quantum dot optical films of examples 1-5: the transmittance and reflectivity testing instrument adopts Shimadzu UV3600, and tests are carried out after a light source is calibrated by setting a measuring wavelength range and transmittance reflectivity parameter selection, so that the transmittance or reflectivity data curve of a sample in a required wavelength range can be obtained; the water vapor transmission rate test is carried out by a water vapor transmission rate tester, according to the method of GB/T26253 (determination of water vapor transmission rates of plastic films and thin sheets) -infrared detector method, an infrared sensor method test principle is adopted, a sample is clamped between test cavities, nitrogen with stable relative humidity flows at one side of the film, and dry nitrogen flows at the other side of the film; due to the presence of the humidity gradient, water vapor can diffuse from the high humidity side through the film to the low humidity side; on the low-humidity side, the transmitted water vapor is carried to the infrared sensor by flowing dry nitrogen, an electric signal with the same proportion is generated when the water vapor enters the sensor, and the parameters such as the water vapor transmission rate of the sample and the like are obtained through analyzing and calculating the electric signal of the sensor.
The transmittance of the anti-reflection blue-light barrier film in the blue light band in the wavelength range of 430-470 nm in the examples 1-5 obtained through the test is summarized in table 1, the transmittance of the anti-reflection full-light barrier film in the examples 1-5 obtained through the test in the wavelength range of 380-780 nm in the full light band in table 2, and the transmittance of the quantum dot optical film in the examples 1-5 obtained through the test and the transparent alumina barrier film in the comparative example 1 in the full light band in the wavelength range of 380-780 nm and the water vapor barrier rate under the conditions of 40 ℃ and 90% RH are summarized in table 3.
TABLE 1
Example 1 Example 2 Example 3 Example 4 Example 5
Transmittance (%) 95.7％ 96.2％ 97.2％ 95.3％ 96.5％
TABLE 2
Example 1 Example 2 Example 3 Example 4 Example 5
Transmittance (%) 94.3％ 93.9％ 95.2％ 93.8％ 93.7％
TABLE 3
Figure BDA0002807308680000151
FIG. 7 is a graph of the reflectivity test result of the anti-reflection blue light barrier film of example 1 in the wavelength range of 380-780 nm in the full light band, and it can be seen from FIG. 7 that as the wavelength is from 380nm to 780nm, the reflectivity first decreases in the blue light band, and then the reflectivity begins to increase in the green light band; in the wavelength range of 430-470 nm of the blue light section, the reflectivity is between 0% and 3%, namely the transmittance can reach more than 97%, the light transmittance of 465nm single-point wavelength is almost close to 100%, the reflectivity of green light and red light is obviously high, and the transmittance of 550nm single-point wavelength is 70%.
FIG. 8 shows the result of the reflectivity test of the anti-reflection total-optical barrier film of example 1 in the total optical band at a wavelength of 380-780 nm, and it can be seen from FIG. 8 that, as the wavelength is from 380nm to 780nm, the reflectivity first fluctuates in the blue band and starts to rise in the green band; within the wavelength range of 380-660 nm, the reflectivity values are all lower than 5%, that is, the most visible light transmissivity can reach more than 95%, the reflectivity of the green light section 490-580 nm is slightly higher than that of the blue light, the transmissivity of the 550nm single-point wavelength is 96%, and the reflectivity of the red light section 620-760 nm is higher than that of the green light section.
Test results show that the anti-reflection blue light barrier film has the reflectivity of 0-3% in the wavelength range of 430-470 nm in a blue light section, namely the transmittance can reach more than 97%, the transmittance of light with the wavelength of 450nm is almost close to 100%, and compared with the original transparent alumina barrier film, the transmittance can be improved by about 10%; the transmittance of the anti-reflection full optical barrier film is improved from 85 percent to 90 percent, even to 95 percent; the quantum dot optical film is combined with the anti-reflection blue light barrier film and the anti-reflection full optical barrier film, and compared with an originally used two-layer barrier film, the transmittance of the whole quantum dot optical film is improved by about 10% compared with the original transmittance. Under the conditions of 40 ℃ and 90% RH humidity, the water vapor barrier rate of the quantum dot optical film is 8.5 multiplied by 10-2g/m2Day, compared with other common transparent alumina quantum dot optical films, the water vapor barrier rate of the optical film is 8 multiplied by 10-2g/m2Day, no significant difference.
The applicant states that the present invention is described by the above examples to illustrate the anti-reflection blue light barrier film, anti-reflection full light barrier film and quantum dot optical film and their applications, but the present invention is not limited to the above examples, i.e. it does not mean that the present invention must be implemented by the above examples. It will be apparent to those skilled in the art that any modification of the present invention, equivalent substitutions of selected materials and additions of auxiliary components, selection of specific modes and the like, which are within the scope and disclosure of the present invention, are contemplated by the present invention.

Claims (10)

1. The anti-reflection blue light barrier film is characterized by comprising a substrate layer and anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer, wherein the structure of each anti-reflection blue light AR layer comprises first Nb layers which are sequentially stacked2O5Layer, first SiO2Layer, second Nb2O5Layer and second SiO2The layers are first Nb in the anti-reflection blue light AR layers positioned on the upper surface and the lower surface of the substrate layer2O5The layer is in contact with the substrate layer.
2. The anti-reflective blue light barrier film of claim 1, wherein the first Nb is2O5The thickness of the layer is 80-90 nm.
3. The anti-reflection blue light barrier film according to claim 1 or 2, wherein the first SiO is2The thickness of the layer is 40 to 50 nm.
4. The anti-reflective blue light barrier film of any of claims 1-3, wherein the second Nb is2O5The thickness of the layer is 80-90 nm.
5. The anti-reflective blue light barrier film of any one of claims 1-4, wherein the second SiO2The thickness of the layer is 40 to 50 nm.
6. The anti-reflection blue light barrier film according to any one of claims 1 to 5, wherein the material of the substrate layer is any one of polyethylene terephthalate, polyethylene, polycarbonate, polypropylene, polyimide, cyclic olefin copolymer or polymethyl methacrylate;
preferably, the thickness of the base material layer is 10-300 μm.
7. The anti-reflection all-optical barrier film is characterized by comprising a substrate layer and an anti-reflection all-optical AR layer positioned on the lower surface of the substrate layer, wherein the anti-reflection all-optical AR layer comprises Nb layers which are laminated together2O5Layer and SiO2Layer of Nb in said antireflective all-optical AR layer2O5The layer is in contact with the substrate layer;
preferably, the Nb2O5The thickness of the layer is 85-95 nm;
preferably, the SiO2The thickness of the layer is 70-80 nm;
preferably, the material of the substrate layer is any one of polyethylene terephthalate, polyethylene, polycarbonate, polypropylene, polyimide, cyclic olefin copolymer or polymethyl methacrylate;
preferably, the thickness of the base material layer is 10-300 μm.
8. A quantum dot optical film, comprising the anti-reflection blue light barrier film according to any one of claims 1 to 6, a quantum dot water layer on the upper surface of the anti-reflection blue light barrier film, and the anti-reflection all-optical barrier film according to claim 7 on the upper surface of the quantum dot water layer, wherein the anti-reflection all-optical AR layer in the anti-reflection all-optical barrier film is in contact with the quantum dot water layer.
9. The quantum dot optical film of claim 8, wherein the quantum dot water layer comprises a substrate layer and a quantum dot glue polymer layer coated on the surface of the substrate layer;
preferably, the preparation method of the quantum dot water layer comprises the following steps: uniformly mixing the quantum dot material and a glue polymer to obtain glue, removing bubbles, and coating the glue on a base material to prepare a film;
preferably, the quantum dots are made of a quantum dot material selected from one or a combination of at least two of CdSe, CdTe, CdS, ZnSe, CdTe, CuInS, InP, CuInSe and CdZnSSe;
preferably, the glue polymer is any one of aliphatic polyurethane acrylate, bisphenol A epoxy resin or organic silicon resin;
preferably, the thickness of the base material layer is 10-300 μm;
preferably, the thickness of the quantum dot water-dropping polymer layer is 10-300 μm.
10. A quantum dot display device, comprising the quantum dot optical film according to claim 8 or 9;
preferably, the quantum dot display device comprises a mobile phone display screen, a television display, a notebook computer display, a vehicle-mounted display or an outdoor advertising board;
preferably, the quantum dot display device comprises a light guide plate, the quantum dot optical film, the lower brightness enhancement film, the upper brightness enhancement film and a liquid crystal panel from bottom to top.
CN202011376565.1A 2020-11-30 2020-11-30 Anti-reflection blue light barrier film, anti-reflection full light barrier film, quantum dot optical film and application thereof Pending CN112363253A (en)

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