CN112359413B - Silicon carbide seed crystal bonding method - Google Patents

Silicon carbide seed crystal bonding method Download PDF

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Publication number
CN112359413B
CN112359413B CN202011260313.2A CN202011260313A CN112359413B CN 112359413 B CN112359413 B CN 112359413B CN 202011260313 A CN202011260313 A CN 202011260313A CN 112359413 B CN112359413 B CN 112359413B
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seed crystal
silicon carbide
bonding
heating
carbide seed
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CN112359413A (en
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崔殿鹏
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The embodiment of the invention provides a silicon carbide seed crystal bonding method, which comprises the following steps: forming a first organic layer on the bonding surface of the seed crystal support to reduce the porosity of the seed crystal support; forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal; bonding the two surfaces of the flexible barrier sheet with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal respectively; and solidifying the bonded silicon carbide seed crystal by adopting a heating mode. The silicon carbide seed crystal bonding method provided by the embodiment of the invention can reduce hexagonal cavity defects in the crystal growth process and improve the crystal quality.

Description

Silicon carbide seed crystal bonding method
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a silicon carbide seed crystal bonding method.
Background
Silicon carbide belongs to a third-generation semiconductor material, has the advantages of wide forbidden band, high thermal conductivity, high critical breakdown field, high electron saturation drift rate and the like, and therefore has a huge application prospect in the field of semiconductor manufacturing. Silicon carbide single crystals are typically produced by physical vapor transport. The method comprises the following specific steps: placing silicon carbide powder into a graphite crucible, and bonding silicon carbide seed crystals on a seed crystal support at the top of the graphite crucible; and heating the silicon carbide powder in the graphite crucible and sublimating the silicon carbide powder into gas-phase silicon carbide, wherein the gas-phase silicon carbide grows on the seed crystal under the action of a temperature gradient to form the silicon carbide single crystal.
At present, a common silicon carbide seed crystal bonding method is to bond a seed crystal on a seed crystal support, carbonize organic glue in a heating mode and finish seed crystal bonding. However, due to factors such as surface machining precision of the seed crystal holder and uniformity of adhesive coating, the mode of directly bonding the seed crystal holder and the seed crystal is equivalent to hard connection of two harder substances, and the problem of air holes at bonding positions is easily caused. Because of the different thermal conductivities of the air holes and the adhesive, the temperature of the air hole area is higher than that of the surrounding adhesive area, which can lead to uneven temperature distribution on the back surface of the seed crystal, thereby exacerbating the thermal evaporation on the back surface of the crystal, and the thermal evaporation is preferentially generated in the air hole area, so that hexagonal cavity defects are generated. In addition, the porosity of the seed crystal holder adopted in the existing preparation method of the silicon carbide single crystal is generally more than 10%, which can aggravate the escape of gas phase substances in the pore area, so that the gas phase substances generated by thermal evaporation on the back surface of the crystal are continuously escaped from the pores of the seed crystal holder, and hexagonal cavity defects are formed.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a silicon carbide seed crystal bonding method which can reduce hexagonal cavity defects in the crystal growth process and improve the crystal quality.
In order to achieve the above object, an embodiment of the present invention provides a silicon carbide seed crystal bonding method, including:
forming a first organic layer on an adhesion surface of a seed crystal support to reduce the porosity of the seed crystal support;
forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal;
bonding two surfaces of a flexible barrier sheet with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal respectively;
and solidifying the bonded silicon carbide seed crystal by adopting a heating mode.
Optionally, the forming a first organic layer on the bonding surface of the seed crystal holder is used for reducing the porosity of the seed crystal holder, and specifically includes:
coating a first organic coating on the bonding surface of the seed crystal support;
placing the seed crystal support coated with the first organic coating into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset first target temperature, the first target temperature is maintained for a first preset time period, and a first preset pressure is applied to the first organic paint in the heating process.
Optionally, the first organic coating is a carbide adhesive, the thickness of the first organic coating is in the range of 1-5 μm, and the value of the first target temperature is in the range of 200-400 ℃; the value range of the first preset time length is 10min-100min; the value range of the first preset pressure is 500N-2000N.
Optionally, the forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal specifically includes:
coating a second organic coating on the bonding surface of the silicon carbide seed crystal;
placing the silicon carbide seed crystal coated with the second organic coating into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset second target temperature, the second target temperature is maintained for a second preset time period, and a second preset pressure is applied to the second organic paint in the heating process.
Optionally, the second organic coating is a carbide adhesive, the thickness of the second organic coating is in the range of 2-5 μm, and the value of the second target temperature is in the range of 500-1000 ℃; the value range of the second preset time length is 10min-300min; the value range of the second preset pressure is 500N-2000N.
Optionally, the bonding the two surfaces of the flexible blocking piece to the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal respectively specifically includes:
coating carbide adhesive on one surface of the flexible barrier sheet, and bonding the surface of the flexible barrier sheet with the first organic layer on the seed crystal support;
a carbide adhesive is coated on the other surface of the flexible barrier sheet and the surface of the flexible barrier sheet is bonded to the second organic layer on the silicon carbide seed crystal.
Optionally, the thickness of the carbide adhesive ranges from 1 μm to 5 μm, and the flexible barrier sheet comprises at least one layer of graphite paper, and the thickness of the graphite paper ranges from 0.25mm to 0.5mm.
Optionally, the solidifying the bonded silicon carbide seed crystal by heating specifically includes:
placing the bonded silicon carbide seed crystal into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset third target temperature, maintaining the third target temperature for a third preset time period;
after the heating temperature of the heating furnace is increased to a preset fourth target temperature, the fourth target temperature is maintained for a fourth preset time period, and a third preset pressure is applied to the silicon carbide seed crystal in the heating process.
Optionally, the value range of the third target temperature is 100-300 ℃; the value range of the third preset time length is 10min-100min; the value range of the fourth target temperature is 800-2000 ℃; the value range of the fourth preset time length is 20min-300min; the value range of the third preset pressure is 500N-2000N.
Optionally, the carbide binder includes a sugar gum, and the preparation method of the sugar gum includes:
adding clear water and white granulated sugar into a container, and stirring to form sugar solution; the mass ratio of the clear water to the white granulated sugar is 2:1;
heating the sugar solution to 80-100 ℃ and continuously stirring in the heating process;
when the color of the sugar solution has a tendency to change towards yellow, the temperature of the sugar solution is regulated to 40-60 ℃, and heating is continued until the sugar solution turns to yellow.
Optionally, the carbide adhesive comprises one or more of graphite glue, AB glue, phenolic resin glue, furfural resin glue and epoxy resin glue.
The embodiment of the invention has the beneficial effects that:
according to the silicon carbide seed crystal bonding method provided by the embodiment of the invention, the first organic layer is formed on the bonding surface of the seed crystal support, so that the porosity of the seed crystal support can be reduced, and gas-phase substances are reduced from escaping through the pores of the seed crystal support; by forming the second organic layer on the bonding surface of the silicon carbide seed crystal, the silicon carbide seed crystal can be protected, and thermal evaporation of the back surface of the silicon carbide seed crystal can be prevented; meanwhile, by using the flexible barrier sheet, the two surfaces of the flexible barrier sheet are respectively bonded with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal, so that soft connection can be formed between the seed crystal support and the silicon carbide seed crystal, and when pressure is applied to the bonded silicon carbide seed crystal, the soft connection is favorable for discharging air holes between the silicon carbide seed crystal and the seed crystal support so as to form compact bonding, thereby reducing hexagonal cavity defects in the crystal growth process and improving the crystal quality.
Drawings
FIG. 1 is a block flow diagram of a method for bonding silicon carbide seed crystals according to an embodiment of the present invention.
Detailed Description
In order to better understand the technical scheme of the invention, the following describes the silicon carbide seed crystal bonding method provided by the invention in detail with reference to the attached drawings.
Referring to fig. 1, a silicon carbide seed crystal bonding method according to an embodiment of the present invention includes:
and 101, forming a first organic layer on the bonding surface of the seed crystal holder to reduce the porosity of the seed crystal holder.
The organic layer can fill and cover the pores in the seed crystal holder, so that the porosity of the seed crystal holder can be reduced. The reduction of the porosity is beneficial to improving the distribution uniformity of the temperature at the back of the silicon carbide seed crystal and reducing the thermal evaporation at the back of the crystal, so that the defect of hexagonal holes can be reduced.
The above step 101 may be repeated until filling and covering of the pores in the seed holder is achieved, for example, 1-2 times.
In some embodiments, the step 101 specifically includes:
step 1011, coating a first organic coating on the bonding surface of the seed crystal support so as to fill and cover the pores in the seed crystal support;
step 1012, heating the seed crystal holder coated with the first organic coating to carbonize the first organic coating to form a first organic layer.
In some embodiments, the first organic coating is a carbide binder and the thickness of the first organic coating has a value in the range of 1 μm to 5 μm. In the thickness range, the filling and covering effects of the pores in the seed crystal support can be ensured, and the porosity can be ensured to meet the requirements.
In some embodiments, the carbide binder includes a sugar gum, which has the advantages of low cost, ease of manufacture, and failure resistance. The preparation method of the sugar gum comprises the following steps:
step one, adding clear water and white granulated sugar into a container, and stirring to form sugar solution.
The mass ratio of the clear water to the white granulated sugar is 2:1.
The container is, for example, a beaker.
Step two, heating the sugar solution to 80 ℃ -100 ℃ (boiling of the sugar solution), and continuously stirring in the heating process;
optionally, a magnetic stirrer can be used for stirring, so that the stirring effect is better.
And thirdly, when the color of the sugar solution in the solution has a tendency of changing towards yellow (for example, changing into light yellow), regulating the temperature of the container to 40-60 ℃, and continuously heating until the sugar solution becomes yellow, thus completing the preparation of the sugar gum.
It should be noted that in practical applications, other carbide adhesives may also be used, including, for example, one or more of graphite glue, AB glue, phenolic resin glue, furfural resin glue, and epoxy resin glue.
In some embodiments, step 1012 includes:
step 1012a, placing the seed crystal support coated with the first organic coating into a heating furnace;
step 1012b, after raising the heating temperature of the heating furnace to a preset first target temperature, maintaining the first target temperature for a first preset period of time, and applying a first preset pressure to the first organic coating during heating.
The first organic paint may be pressed down from above by a weight provided in a heating furnace, for example, in a plurality of ways of applying a first predetermined pressure to the first organic paint, so that the first organic paint can fill and cover the pores in the seed holder.
Optionally, the value range of the first target temperature is 200-400 ℃; the value range of the first preset time length is 10min-100min; the value range of the first preset pressure is 500N-2000N. Within this range of values, the first organic coating can be effectively caused to fill and cover the pores in the seed holder. In addition, the furnace chamber pressure of the heating furnace is less than 10mbar.
102, forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal;
by means of the second organic layer, the effect of protecting the silicon carbide seed crystal can be achieved, thermal evaporation of the back surface of the silicon carbide seed crystal is prevented, and therefore hexagonal cavity defects can be reduced.
In some embodiments, the step 102 specifically includes:
step 1021, coating a second organic coating on the bonding surface of the silicon carbide seed crystal;
step 1022, heating the silicon carbide seed coated with the second organic coating to carbonize the second organic coating to form a second organic layer.
In some embodiments, the second organic coating is a carbide binder and the thickness of the second organic coating has a value in the range of 2 μm to 5 μm. The kind of the carbide binder is the same as that used for the first organic coating material, and a description thereof will not be repeated.
In some embodiments, the step 1022 specifically includes:
step 1022a, placing the silicon carbide seed crystal support coated with the second organic coating into a heating furnace;
step 1022b, after raising the heating temperature of the heating furnace to the preset second target temperature, maintaining the second target temperature for a second preset period of time, and applying a second preset pressure to the second organic coating during the heating process.
Similar to the application of pressure to the first organic coating material, the second organic coating material may be pressed down from above by a weight provided in a heating furnace to be able to effectively prevent thermal evaporation of the back surface of the silicon carbide seed crystal.
Optionally, the value range of the second target temperature is 500-1000 ℃; the value range of the second preset time length is 10min-300min; the value range of the second preset pressure is 500N-2000N. In the numerical range, the back surface thermal evaporation of the silicon carbide seed crystal can be effectively prevented, so that the defect of hexagonal holes can be reduced. In addition, the furnace chamber pressure of the heating furnace is less than 10mbar.
And 103, respectively bonding the two surfaces of the flexible barrier sheet with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal.
By utilizing the flexible barrier sheet, the bonding between the seed crystal support and the silicon carbide seed crystal can be realized, meanwhile, the flexible characteristic of the flexible barrier sheet is utilized, so that the seed crystal support and the silicon carbide seed crystal can be in soft connection, when pressure is applied to the bonded silicon carbide seed crystal, the soft connection is favorable for discharging air holes between the silicon carbide seed crystal and the seed crystal support so as to form compact bonding, thereby reducing hexagonal cavity defects in the crystal growth process and improving the crystal quality.
In some embodiments, the flexible barrier sheet comprises at least one layer of graphite paper. Because the porosity of the graphite paper is only 1%, the graphite paper can effectively prevent the back surface of the silicon carbide seed crystal from thermal evaporation, so that the defect of hexagonal cavities can be further reduced. Of course, in practical applications, other flexible materials may be used instead of graphite paper, as long as the flexible material can function to prevent thermal evaporation of the back side of the silicon carbide seed crystal.
In some embodiments, the graphite paper has a thickness of 0.25mm to 0.5mm. The graphite paper is preferably two-ply.
In some embodiments, step 103 specifically includes:
step 1031, coating carbide adhesive on one surface of the flexible barrier sheet, and bonding the surface of the flexible barrier sheet with the first organic layer on the seed crystal support;
step 1032, coating carbide adhesive on another surface of the flexible barrier sheet and bonding the surface of the flexible barrier sheet to a second organic layer on the silicon carbide seed crystal.
In some embodiments, the carbide binder has a thickness ranging from 1 μm to 5 μm. The kind of the carbide binder is the same as that used for the first organic paint, and a description thereof will not be repeated.
And 104, solidifying the bonded silicon carbide seed crystal by adopting a heating mode.
By means of the step 104, the air holes between the silicon carbide seed crystal and the seed crystal holder can be eliminated, so that the silicon carbide seed crystal and the seed crystal are tightly bonded, and the defect of the hexagonal cavity can be further reduced.
The step 104 specifically includes:
step 1041, placing the bonded silicon carbide seed crystal into a heating furnace;
step 1042, after raising the heating temperature of the heating furnace to a preset third target temperature, maintaining the third target temperature for a third preset period of time;
step 1043, after raising the heating temperature of the heating furnace to a preset fourth target temperature, maintaining the fourth target temperature for a fourth preset period of time, and applying a third preset pressure to the silicon carbide seed crystal during the heating process.
Similar to the application of pressure to the first organic coating material, the silicon carbide seed crystal may be pressed down from above by a weight provided in a heating furnace to enable effective removal of air holes existing between the silicon carbide seed crystal and a seed holder.
In some embodiments, the third target temperature has a value in the range of 100 ℃ to 300 ℃; the value range of the third preset time length is 10min-100min; the value range of the fourth target temperature is 800-2000 ℃; the value range of the fourth preset time length is 20min-300min; the value range of the third preset pressure is 500N-2000N. In the numerical range, the air holes existing between the silicon carbide seed crystal and the seed crystal holder can be effectively eliminated. In addition, the furnace chamber pressure of the heating furnace is less than 10mbar.
In summary, according to the silicon carbide seed crystal bonding method provided by the embodiment of the invention, the first organic layer is formed on the bonding surface of the seed crystal support, so that the porosity of the seed crystal support can be reduced, and the escape of gas phase substances through the pores of the seed crystal support is reduced; by forming the second organic layer on the bonding surface of the silicon carbide seed crystal, the silicon carbide seed crystal can be protected, and thermal evaporation of the back surface of the silicon carbide seed crystal can be prevented; meanwhile, by using the flexible barrier sheet, the two surfaces of the flexible barrier sheet are respectively bonded with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal, so that soft connection can be formed between the seed crystal support and the silicon carbide seed crystal, and when pressure is applied to the bonded silicon carbide seed crystal, the soft connection is favorable for discharging air holes between the silicon carbide seed crystal and the seed crystal support so as to form compact bonding, thereby reducing hexagonal cavity defects in the crystal growth process and improving the crystal quality.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.

Claims (7)

1. A method of bonding silicon carbide seed crystals, comprising:
forming a first organic layer on an adhesion surface of a seed crystal support to reduce the porosity of the seed crystal support;
forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal; bonding two surfaces of a flexible barrier sheet with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal respectively;
solidifying the bonded silicon carbide seed crystal by adopting a heating mode;
forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal, wherein the method specifically comprises the following steps:
coating a second organic coating on the bonding surface of the silicon carbide seed crystal;
placing the silicon carbide seed crystal coated with the second organic coating into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset second target temperature, maintaining the second target temperature for a second preset time period, and applying a second preset pressure to the second organic coating in the heating process;
bonding the two surfaces of the flexible barrier sheet with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal respectively, wherein the bonding comprises the following steps:
firstly, coating carbide adhesive on one surface of the flexible barrier sheet, and bonding the surface of the flexible barrier sheet with the first organic layer on the seed crystal support;
then coating carbide adhesive on the other surface of the flexible barrier sheet, and bonding the surface of the flexible barrier sheet with the second organic layer on the silicon carbide seed crystal;
the method for solidifying the bonded silicon carbide seed crystal by adopting the heating mode specifically comprises the following steps:
placing the bonded silicon carbide seed crystal into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset third target temperature, maintaining the third target temperature for a third preset time period;
after the heating temperature of the heating furnace is increased to a preset fourth target temperature, maintaining the fourth target temperature for a fourth preset time period, and applying a third preset pressure to the silicon carbide seed crystal in the heating process, wherein the furnace chamber pressure of the heating furnace is less than 10mbar;
the value range of the third target temperature is 100-300 ℃; the value range of the third preset time length is 10min-100min; the value range of the fourth target temperature is 800-2000 ℃; the value range of the fourth preset time length is 20min-300min; the value range of the third preset pressure is 500N-2000N.
2. The method of bonding silicon carbide seed crystals according to claim 1, wherein the forming a first organic layer on the bonding surface of the seed crystal support to reduce the porosity of the seed crystal support comprises: coating a first organic coating on the bonding surface of the seed crystal support;
placing the seed crystal support coated with the first organic coating into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset first target temperature, the first target temperature is maintained for a first preset time period, and a first preset pressure is applied to the first organic paint in the heating process.
3. The method of bonding silicon carbide seed crystals according to claim 2, wherein the first organic coating is a carbide adhesive, the thickness of the first organic coating is in the range of 1 μm to 5 μm, and the first target temperature is in the range of 200 ℃ to 400 ℃; the value range of the first preset time length is 10min-100min; the value range of the first preset pressure is 500N-2000N.
4. The method for bonding silicon carbide seed crystals according to claim 1, wherein the second organic coating is a carbide adhesive, the thickness of the second organic coating is in the range of 2 μm to 5 μm, and the second target temperature is in the range of 500 ℃ to 1000 ℃; the value range of the second preset time length is 10min-300min; the value range of the second preset pressure is 500N-2000N.
5. The method of bonding silicon carbide seeds according to claim 1, wherein the thickness of the carbide adhesive is in the range of 1 μm to 5 μm, the flexible barrier sheet comprises at least one layer of graphite paper, and the thickness of the graphite paper is 0.25mm to 0.5mm.
6. The method of bonding silicon carbide seeds according to any of claims 3-4, wherein the carbide binder comprises a gum, and the method of preparing the gum comprises:
adding clear water and white granulated sugar into a container, and stirring to form sugar solution; the mass ratio of the clear water to the white granulated sugar is 2:1;
heating the sugar solution to 80-100 ℃ and continuously stirring in the heating process;
when the color of the sugar solution has a tendency to change towards yellow, the temperature of the sugar solution is regulated to 40-60 ℃, and heating is continued until the sugar solution turns to yellow.
7. The method of any one of claims 3-4, wherein the carbide-based adhesive comprises one or more of a graphite gel, an AB gel, a phenolic resin gel, a furfural resin gel, and an epoxy resin gel.
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CN113631025A (en) * 2021-08-04 2021-11-09 拓思精工科技(苏州)有限公司 Silicon carbide seed crystal chip mounter and using method thereof
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CN115573041A (en) * 2022-09-09 2023-01-06 眉山博雅新材料股份有限公司 Seed crystal bonding method and equipment
CN116837456B (en) * 2023-07-17 2024-02-23 江苏超芯星半导体有限公司 Seed crystal treatment method and silicon carbide crystal growth method

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