CN112359413A - Silicon carbide seed crystal bonding method - Google Patents
Silicon carbide seed crystal bonding method Download PDFInfo
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- CN112359413A CN112359413A CN202011260313.2A CN202011260313A CN112359413A CN 112359413 A CN112359413 A CN 112359413A CN 202011260313 A CN202011260313 A CN 202011260313A CN 112359413 A CN112359413 A CN 112359413A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
Abstract
The embodiment of the invention provides a silicon carbide seed crystal bonding method, which comprises the following steps: forming a first organic layer on the bonding surface of the seed crystal support to reduce the porosity of the seed crystal support; forming a second organic layer on the bonding surface of the silicon carbide seed crystal for protecting the silicon carbide seed crystal; bonding two surfaces of the flexible barrier sheet with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal respectively; and curing the bonded silicon carbide seed crystals in a heating mode. The silicon carbide seed crystal bonding method provided by the embodiment of the invention can reduce the defect of a hexagonal cavity in the crystal growth process and improve the crystal quality.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a silicon carbide seed crystal bonding method.
Background
The silicon carbide belongs to a third-generation semiconductor material, has the advantages of wide forbidden band, high thermal conductivity, high critical breakdown field degree, high electron saturation drift rate and the like, and has great application prospect in the field of semiconductor manufacturing. Silicon carbide single crystals are generally produced by physical vapor transport methods. The method comprises the following specific steps: placing the silicon carbide powder in a graphite crucible, and bonding silicon carbide seed crystals on a seed crystal support at the top of the graphite crucible; and heating the silicon carbide powder in the graphite crucible and sublimating the silicon carbide powder into gas-phase silicon carbide, wherein the gas-phase silicon carbide grows on the seed crystal under the action of temperature gradient to form silicon carbide single crystal.
At present, the commonly used method for bonding the silicon carbide seed crystal is to bond the seed crystal on a seed crystal support, and carbonize the organic glue by a heating mode to complete the bonding of the seed crystal. However, due to factors such as the surface machining precision of the seed crystal holder and the coating uniformity of the adhesive, the mode of directly bonding the seed crystal holder and the seed crystal is equivalent to hard connection of two harder substances, and the problem that air holes exist in the bonding position is easily caused. Since the thermal conductivity of the pores and the adhesive is different, the temperature of the pore region is higher than that of the adhesive region around the pores, which causes uneven temperature distribution on the back surface of the seed crystal, thereby aggravating thermal evaporation on the back surface of the crystal, and the thermal evaporation is preferentially generated in the pore region, resulting in generation of hexagonal void defects. In addition, the porosity of the seed crystal holder adopted by the existing preparation method of the silicon carbide single crystal is usually more than 10%, which can aggravate the escape of gas phase substances in the air hole area, so that the gas phase substances generated on the back of the crystal due to thermal evaporation continuously escape from the pores of the seed crystal holder, and further a hexagonal cavity defect is formed.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a silicon carbide seed crystal bonding method which can reduce the defect of a hexagonal cavity in the crystal growth process and improve the crystal quality.
In order to achieve the above object, an embodiment of the present invention provides a silicon carbide seed crystal bonding method, including:
forming a first organic layer on the bonding surface of the seed crystal support to reduce the porosity of the seed crystal support;
forming a second organic layer on the bonding surface of the silicon carbide seed crystal for protecting the silicon carbide seed crystal;
bonding two surfaces of a flexible barrier sheet to the first organic layer on the seed holder and the second organic layer on the silicon carbide seed crystal respectively;
and curing the bonded silicon carbide seed crystals in a heating mode.
Optionally, the forming a first organic layer on the bonding surface of the seed crystal support to reduce the porosity of the seed crystal support specifically includes:
coating a first organic coating on the bonding surface of the seed crystal support;
placing the seed tray coated with the first organic coating into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset first target temperature, the first target temperature is kept within a first preset time, and a first preset pressure is applied to the first organic coating in the heating process.
Optionally, the first organic coating is a carbide adhesive, the thickness of the first organic coating ranges from 1 μm to 5 μm, and the first target temperature ranges from 200 ℃ to 400 ℃; the value range of the first preset time is 10min-100 min; the value range of the first preset pressure is 500N-2000N.
Optionally, forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal specifically includes:
coating a second organic coating on the bonding surface of the silicon carbide seed crystal;
placing the silicon carbide seed crystal coated with the second organic coating into a heating furnace;
and after the heating temperature of the heating furnace is increased to a preset second target temperature, keeping the second target temperature for a second preset time, and applying a second preset pressure to the second organic coating in the heating process.
Optionally, the second organic coating is a carbide adhesive, the thickness of the second organic coating ranges from 2 μm to 5 μm, and the second target temperature ranges from 500 ℃ to 1000 ℃; the value range of the second preset time is 10-300 min; the value range of the second preset pressure is 500N-2000N.
Optionally, the bonding the two surfaces of the flexible barrier sheet to the first organic layer on the seed holder and the second organic layer on the silicon carbide seed crystal respectively specifically includes:
coating a carbide adhesive on one surface of the flexible barrier sheet and bonding the surface of the flexible barrier sheet to the first organic layer on the seed holder;
coating a carbide adhesive on the other surface of the flexible barrier sheet and bonding the surface of the flexible barrier sheet to the second organic layer on the silicon carbide seed crystal.
Optionally, the thickness of the carbide adhesive ranges from 1 μm to 5 μm, the flexible barrier sheet includes at least one layer of graphite paper, and the thickness of the graphite paper ranges from 0.25mm to 0.5 mm.
Optionally, the curing the bonded silicon carbide seed crystal in a heating manner specifically includes:
placing the bonded silicon carbide seed crystal into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset third target temperature, keeping the third target temperature for a third preset time;
and after the heating temperature of the heating furnace is increased to a preset fourth target temperature, keeping the fourth target temperature for a fourth preset time, and applying a third preset pressure to the silicon carbide seed crystal in the heating process.
Optionally, the value range of the third target temperature is 100-300 ℃; the value range of the third preset time is 10min-100 min; the value range of the fourth target temperature is 800-2000 ℃; the value range of the fourth preset time is 20-300 min; the value range of the third preset pressure is 500N-2000N.
Optionally, the carbide binder includes sugar gum, and the preparation method of the sugar gum includes:
adding clear water and white granulated sugar into a container, and stirring to form a sugar solution; the mass ratio of the clear water to the white granulated sugar is 2: 1;
heating the sugar solution to 80-100 ℃, and continuously stirring in the heating process;
when the color of the sugar liquid tends to change towards yellow, the temperature of the sugar liquid is adjusted to 40-60 ℃, and the sugar liquid is continuously heated until the sugar liquid becomes yellow.
Optionally, the carbide adhesive includes one or more of graphite glue, AB glue, phenolic resin glue, furfural resin glue, and epoxy resin glue.
The embodiment of the invention has the following beneficial effects:
according to the silicon carbide seed crystal bonding method provided by the embodiment of the invention, the first organic layer is formed on the bonding surface of the seed crystal support, so that the porosity of the seed crystal support can be reduced, and the escape of gas-phase substances through the pores of the seed crystal support is reduced; the second organic layer is formed on the bonding surface of the silicon carbide seed crystal, so that the silicon carbide seed crystal can be protected, and the thermal evaporation of the back surface of the silicon carbide seed crystal is prevented; simultaneously, through utilizing flexible separation piece, make its two surfaces bond with the first organic layer on the seed crystal support and the second organic layer on the carborundum seed crystal respectively, can make and form the flexible coupling between seed crystal support and the carborundum seed crystal, when exerting pressure to the carborundum seed crystal that bonds, this flexible coupling helps discharging carborundum seed crystal and the seed crystal to hold in the palm the gas pocket between to form the bonding of compactness, thereby can reduce the cavity hexagonal defect among the crystal growth process, promote crystal quality.
Drawings
Fig. 1 is a flow chart of a silicon carbide seed crystal bonding method according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following describes the silicon carbide seed crystal bonding method provided by the present invention in detail with reference to the accompanying drawings.
Referring to fig. 1, a method for bonding silicon carbide seed crystals according to an embodiment of the present invention includes:
and 101, forming a first organic layer on the bonding surface of the seed crystal support to reduce the porosity of the seed crystal support.
The organic layer can fill and cover the pores in the seed crystal support, so that the porosity of the seed crystal support can be reduced. The reduction of the porosity is beneficial to improving the distribution uniformity of the temperature on the back of the silicon carbide seed crystal and reducing the thermal evaporation on the back of the crystal, thereby reducing the defects of hexagonal cavities.
The above step 101 may be repeated until the filling and covering of the pores in the seed holder is achieved, for example, 1-2 times.
In some embodiments, the step 101 specifically includes:
step 1011, coating a first organic coating on the bonding surface of the seed crystal support to fill and cover the pores in the seed crystal support;
step 1012, heating the seed holder coated with the first organic coating to carbonize the first organic coating to form a first organic layer.
In some embodiments, the first organic coating is a carbide binder and the thickness of the first organic coating ranges from 1 μm to 5 μm. In the thickness range, the filling and covering effects of the pores in the seed crystal support can be ensured, and the porosity can meet the requirements.
In some embodiments, the carbide binder includes a sugar gum, which has the advantages of low cost, ease of manufacture, and low susceptibility to failure. The preparation method of the sugar gum comprises the following steps:
step one, adding clear water and white granulated sugar into a container, and stirring to form a sugar solution.
The mass ratio of the clear water to the white granulated sugar is 2: 1.
The container is, for example, a beaker.
Step two, heating the sugar solution to 80-100 ℃ (the sugar solution boils), and continuously stirring in the heating process;
optionally, a magnetic stirrer can be used for stirring, and the stirring effect is better.
And step three, when the color of the sugar solution in the solution has a trend towards yellow (for example, the sugar solution becomes light yellow), adjusting the heating temperature of the container to 40-60 ℃, and continuously heating until the sugar solution becomes yellow, thus finishing the preparation of the sugar gum.
It should be noted that, in practical applications, other carbide adhesives may also be used, including one or more of graphite glue, AB glue, phenolic resin glue, furfural resin glue, and epoxy resin glue, for example.
In some embodiments, the step 1012 specifically includes:
step 1012a, putting the seed crystal support coated with the first organic coating into a heating furnace;
step 1012b, after the heating temperature of the heating furnace is increased to the preset first target temperature, the first target temperature is maintained for the first preset time period, and a first preset pressure is applied to the first organic coating in the heating process.
There are various ways of applying the first predetermined pressure to the first organic coating, and for example, the first organic coating may be pressed downward from above by a weight provided in a heating furnace so that the first organic coating fills and covers the pores in the seed holder.
Optionally, the value range of the first target temperature is 200-400 ℃; the value range of the first preset time is 10min-100 min; the first preset pressure is in a value range of 500N-2000N. Within this range, the first organic coating can be effective to fill and cover the pores in the seed holder. In addition, the pressure of the furnace chamber of the heating furnace is less than 10 mbar.
102, forming a second organic layer on the bonding surface of the silicon carbide seed crystal to protect the silicon carbide seed crystal;
by means of the second organic layer, the function of protecting the silicon carbide seed crystal can be achieved, thermal evaporation of the back of the silicon carbide seed crystal is prevented, and therefore defects of a hexagonal cavity can be reduced.
In some embodiments, the step 102 specifically includes:
step 1021, coating a second organic coating on the bonding surface of the silicon carbide seed crystal;
step 1022, heating the silicon carbide seed crystal coated with the second organic coating to carbonize the second organic coating to form a second organic layer.
In some embodiments, the second organic coating is a carbide binder and the second organic coating has a thickness in a range from 2 μm to 5 μm. The kind of the carbide binder is the same as that of the carbide binder used for the first organic paint described above, and a description thereof will not be repeated.
In some embodiments, the step 1022 specifically includes:
1022a, putting the silicon carbide seed crystal holder coated with the second organic coating into a heating furnace;
and 1022b, after the heating temperature of the heating furnace is increased to the preset second target temperature, keeping the second target temperature for a second preset time, and applying a second preset pressure to the second organic coating in the heating process.
Similarly to the application of pressure to the first organic coating, the second organic coating may be pressed downward from above by a weight provided in the heating furnace, so that thermal evaporation of the back surface of the silicon carbide seed crystal can be effectively prevented.
Optionally, the value range of the second target temperature is 500-1000 ℃; the value range of the second preset time is 10min-300 min; the second preset pressure is 500N-2000N. Within the numerical range, the thermal evaporation on the back surface of the silicon carbide seed crystal can be effectively prevented, so that the defects of the hexagonal cavities can be reduced. In addition, the pressure of the furnace chamber of the heating furnace is less than 10 mbar.
And 103, respectively bonding the two surfaces of the flexible barrier sheet with the first organic layer on the seed crystal support and the second organic layer on the silicon carbide seed crystal.
Utilize above-mentioned flexible separation piece, can realize that the seed crystal holds in the palm the bonding between and the carborundum seed crystal, utilize the flexible speciality of flexible separation piece simultaneously, can make the seed crystal hold in the palm and form the flexonics between the carborundum seed crystal, when exerting pressure to the carborundum seed crystal that bonds, this flexonics helps discharging the gas pocket between carborundum seed crystal and the seed crystal support to form the bonding of compactness, thereby can reduce the hexagonal cavity defect among the crystal growth process, promote crystal quality.
In some embodiments, the flexible barrier sheet comprises at least one layer of graphite paper. The porosity of the graphite paper is only 1%, so that thermal evaporation on the back of the silicon carbide seed crystal can be effectively prevented, and the defects of hexagonal cavities can be further reduced. Of course, in practical application, other flexible materials can be used to replace the graphite paper as long as the flexible materials can prevent the thermal evaporation of the back of the silicon carbide seed crystal.
In some embodiments, the graphite paper has a thickness of 0.25mm to 0.5 mm. The graphite paper is preferably two ply.
In some embodiments, step 103 specifically includes:
step 1031, coating a carbide adhesive on one surface of the flexible barrier sheet, and adhering the surface of the flexible barrier sheet to the first organic layer on the seed holder;
step 1032 coats a carbide adhesive on the other surface of the flexible barrier sheet and bonds the surface of the flexible barrier sheet to the second organic layer on the silicon carbide seed crystal.
In some embodiments, the thickness of the carbide binder ranges from 1 μm to 5 μm. The kind of the carbide binder is the same as that of the carbide binder used for the first organic paint, and a description thereof will not be repeated.
And 104, curing the bonded silicon carbide seed crystals in a heating mode.
By means of the step 104, air holes existing between the silicon carbide seed crystal and the seed crystal holder can be eliminated, so that the silicon carbide seed crystal and the seed crystal holder form compact adhesion, and the defects of the hexagonal cavities can be further reduced.
The step 104 specifically includes:
step 1041, putting the bonded silicon carbide seed crystal into a heating furnace;
1042, after the heating temperature of the heating furnace is increased to a preset third target temperature, keeping the third target temperature for a third preset time;
step 1043, after the heating temperature of the heating furnace is raised to a fourth preset target temperature, maintaining the fourth target temperature for a fourth preset time period, and applying a third preset pressure to the silicon carbide seed crystal in the heating process.
Similarly to the application of pressure to the first organic coating, the silicon carbide seed crystal may be pressed downward from above by a weight provided in the heating furnace, so that the pores existing between the silicon carbide seed crystal and the seed holder can be effectively eliminated.
In some embodiments, the third target temperature ranges from 100 ℃ to 300 ℃; the value range of the third preset time is 10min-100 min; the value range of the fourth target temperature is 800-2000 ℃; the value range of the fourth preset time is 20min-300 min; the third preset pressure is 500N-2000N. In the numerical range, the air holes between the silicon carbide seed crystal and the seed crystal support can be effectively eliminated. In addition, the pressure of the furnace chamber of the heating furnace is less than 10 mbar.
In summary, in the silicon carbide seed crystal bonding method provided by the embodiment of the invention, the first organic layer is formed on the bonding surface of the seed crystal support, so that the porosity of the seed crystal support can be reduced, and the escape of gas-phase substances through the pores of the seed crystal support is reduced; the second organic layer is formed on the bonding surface of the silicon carbide seed crystal, so that the silicon carbide seed crystal can be protected, and the thermal evaporation of the back surface of the silicon carbide seed crystal is prevented; simultaneously, through utilizing flexible separation piece, make its two surfaces bond with the first organic layer on the seed crystal support and the second organic layer on the carborundum seed crystal respectively, can make and form the flexible coupling between seed crystal support and the carborundum seed crystal, when exerting pressure to the carborundum seed crystal that bonds, this flexible coupling helps discharging carborundum seed crystal and the seed crystal to hold in the palm the gas pocket between to form the bonding of compactness, thereby can reduce the cavity hexagonal defect among the crystal growth process, promote crystal quality.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. A silicon carbide seed crystal bonding method is characterized by comprising the following steps:
forming a first organic layer on the bonding surface of the seed crystal support to reduce the porosity of the seed crystal support;
forming a second organic layer on the bonding surface of the silicon carbide seed crystal for protecting the silicon carbide seed crystal;
bonding two surfaces of a flexible barrier sheet to the first organic layer on the seed holder and the second organic layer on the silicon carbide seed crystal respectively;
and curing the bonded silicon carbide seed crystals in a heating mode.
2. The method for bonding the silicon carbide seed crystal according to claim 1, wherein the forming of the first organic layer on the bonding surface of the seed holder is used for reducing the porosity of the seed holder, and specifically comprises:
coating a first organic coating on the bonding surface of the seed crystal support;
placing the seed tray coated with the first organic coating into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset first target temperature, the first target temperature is kept within a first preset time, and a first preset pressure is applied to the first organic coating in the heating process.
3. The silicon carbide seed crystal bonding method according to claim 2, wherein the first organic coating is a carbide bonding agent, the thickness of the first organic coating ranges from 1 μm to 5 μm, and the first target temperature ranges from 200 ℃ to 400 ℃; the value range of the first preset time is 10min-100 min; the value range of the first preset pressure is 500N-2000N.
4. The method for bonding the silicon carbide seed crystal according to claim 1, wherein the forming of the second organic layer on the bonding surface of the silicon carbide seed crystal for protecting the silicon carbide seed crystal comprises:
coating a second organic coating on the bonding surface of the silicon carbide seed crystal;
placing the silicon carbide seed crystal coated with the second organic coating into a heating furnace;
and after the heating temperature of the heating furnace is increased to a preset second target temperature, keeping the second target temperature for a second preset time, and applying a second preset pressure to the second organic coating in the heating process.
5. The silicon carbide seed crystal bonding method according to claim 4, wherein the second organic coating is a carbide bonding agent, the thickness of the second organic coating ranges from 2 μm to 5 μm, and the second target temperature ranges from 500 ℃ to 1000 ℃; the value range of the second preset time is 10-300 min; the value range of the second preset pressure is 500N-2000N.
6. The silicon carbide seed crystal bonding method according to claim 1, wherein the bonding of the two surfaces of the flexible barrier sheet to the first organic layer on the seed holder and the second organic layer on the silicon carbide seed crystal respectively comprises:
coating a carbide adhesive on one surface of the flexible barrier sheet and bonding the surface of the flexible barrier sheet to the first organic layer on the seed holder;
coating a carbide adhesive on the other surface of the flexible barrier sheet and bonding the surface of the flexible barrier sheet to the second organic layer on the silicon carbide seed crystal.
7. The method of claim 6, wherein the thickness of the carbide adhesive ranges from 1 μm to 5 μm, the flexible barrier sheet comprises at least one layer of graphite paper, and the thickness of the graphite paper ranges from 0.25mm to 0.5 mm.
8. The silicon carbide seed crystal bonding method according to claim 1, wherein the step of curing the bonded silicon carbide seed crystal by heating comprises:
placing the bonded silicon carbide seed crystal into a heating furnace;
after the heating temperature of the heating furnace is increased to a preset third target temperature, keeping the third target temperature for a third preset time;
and after the heating temperature of the heating furnace is increased to a preset fourth target temperature, keeping the fourth target temperature for a fourth preset time, and applying a third preset pressure to the silicon carbide seed crystal in the heating process.
9. The silicon carbide seed crystal bonding method according to claim 8, wherein the third target temperature is in a range of 100 ℃ to 300 ℃; the value range of the third preset time is 10min-100 min; the value range of the fourth target temperature is 800-2000 ℃; the value range of the fourth preset time is 20-300 min; the value range of the third preset pressure is 500N-2000N.
10. The seed crystal bonding method of silicon carbide according to claim 3, 5 or 6, wherein the carbide binder comprises sugar gum, and the preparation method of the sugar gum comprises:
adding clear water and white granulated sugar into a container, and stirring to form a sugar solution; the mass ratio of the clear water to the white granulated sugar is 2: 1;
heating the sugar solution to 80-100 ℃, and continuously stirring in the heating process;
when the color of the sugar liquid tends to change towards yellow, the temperature of the sugar liquid is adjusted to 40-60 ℃, and the sugar liquid is continuously heated until the sugar liquid becomes yellow.
11. The method of claim 3, 5 or 6, wherein the carbide bonding agent comprises one or more of graphite glue, AB glue, phenolic glue, furfural glue and epoxy glue.
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| CN113631025A (en) * | 2021-08-04 | 2021-11-09 | 拓思精工科技(苏州)有限公司 | Silicon carbide seed crystal chip mounter and using method thereof |
| CN114561695A (en) * | 2022-03-04 | 2022-05-31 | 合肥世纪金光半导体有限公司 | Device and method for bonding seed crystal and seed crystal holder |
| CN115573041A (en) * | 2022-09-09 | 2023-01-06 | 眉山博雅新材料股份有限公司 | Seed crystal bonding method and equipment |
| CN116837456A (en) * | 2023-07-17 | 2023-10-03 | 江苏超芯星半导体有限公司 | Seed crystal treatment method and silicon carbide crystal growth method |
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| CN111088521A (en) * | 2020-01-07 | 2020-05-01 | 北京北方华创微电子装备有限公司 | Method for bonding and fixing seed crystal and graphite cover |
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| CN113631025A (en) * | 2021-08-04 | 2021-11-09 | 拓思精工科技(苏州)有限公司 | Silicon carbide seed crystal chip mounter and using method thereof |
| CN114561695A (en) * | 2022-03-04 | 2022-05-31 | 合肥世纪金光半导体有限公司 | Device and method for bonding seed crystal and seed crystal holder |
| CN115573041A (en) * | 2022-09-09 | 2023-01-06 | 眉山博雅新材料股份有限公司 | Seed crystal bonding method and equipment |
| CN116837456A (en) * | 2023-07-17 | 2023-10-03 | 江苏超芯星半导体有限公司 | Seed crystal treatment method and silicon carbide crystal growth method |
| CN116837456B (en) * | 2023-07-17 | 2024-02-23 | 江苏超芯星半导体有限公司 | Seed crystal treatment method and silicon carbide crystal growth method |
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| CN112359413B (en) | 2023-09-08 |
| CN116926664A (en) | 2023-10-24 |
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