CN112359348A - 一种沉积掺杂非晶硅薄膜无绕镀的方法和装置 - Google Patents

一种沉积掺杂非晶硅薄膜无绕镀的方法和装置 Download PDF

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CN112359348A
CN112359348A CN202011139286.3A CN202011139286A CN112359348A CN 112359348 A CN112359348 A CN 112359348A CN 202011139286 A CN202011139286 A CN 202011139286A CN 112359348 A CN112359348 A CN 112359348A
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silicon wafer
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上官泉元
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Jiangsu Jietai Photoelectric Technology Co ltd
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Abstract

本发明公开了一种沉积掺杂非晶硅薄膜无绕镀的方法和装置，包括如下步骤：S1.将硅片平躺放置在采用中空设计且仅与硅片四周边缘位置接触的载板上并输送至工艺腔内；S2.对工艺腔进行抽真空；S3.从底部向工艺腔内通入工艺气体，通过位于硅片上侧面的加热装置对硅片进行加热，并通过位于硅片下侧的电极放电激发工艺气体以在电极和硅片之间形成含有等离子体的反应区域，从下往上在硅片表面沉积薄膜。本发明通过将硅片平躺放置在采用中空设计并对硅片四周边缘位置起到支撑作用及包裹遮盖的载板上，在工艺腔内采用从下到上沉积薄膜的方式，由此解决沉积镀膜过程中硅片侧面甚至是非沉积面的绕镀问题。

Description

一种沉积掺杂非晶硅薄膜无绕镀的方法和装置
技术领域
本发明涉及太阳能电池制备技术领域，特别涉及一种沉积掺杂非晶硅薄膜无绕镀的方法和装置。
背景技术
太阳能电池制造过程中，不论采取管式还是板式的镀膜方式，均存在绕镀的问题，在硅片的侧面甚至部分绕镀到硅片的另外一面即非沉积面形成硅薄膜，这种绕镀的薄膜在后续的工艺中难以被去除：
1、在管式炉镀膜过程中，把两张硅片重叠放置，镀膜在硅片的另一面即非重叠面进行以避免双面镀膜；但由于硅片不能完美贴合，经常会出现薄膜沉积在两块硅片的重叠表面上；即使贴合完美，也很难解决在硅片边缘不重叠的区域出现的绕镀现象；因此，一般镀膜后都需要经过一道非常复杂的清洗工艺来把背面的薄膜清洗掉；
2、在链式镀膜体系里，通常用PECVD方法沉积掺杂非晶硅层，硅片平躺放置在平面载板上，理论上，当从上往下镀膜时，可以避免硅片下表面有膜层沉积，但在实际过程中，硅片侧面和下表面四周边缘区域仍会出现膜层的沉积，从而引发漏电；所以，解决绕镀的最有效方法需要把硅片边缘包裹起来；对于从上往下镀膜的设备和工艺，为了实现对硅片边缘的包裹遮盖，需加入额外的工装，不仅会导致设备结构复杂，并且自动上料过程也将繁琐、困难。
目前，去除绕镀的方法大多数为化学刻蚀法，步骤繁琐，成本高，且绕镀几乎难以被清洗干净，不仅在电池外观上会造成不良，而且对沉积掺杂非晶硅薄膜而言，绕镀在硅片背面的薄膜还会引发漏电现象。因此，一种避免沉积掺杂非晶硅薄膜绕镀的方法和装置亟待研究。
发明内容
为解决上述技术问题，本发明提供了一种沉积掺杂非晶硅薄膜无绕镀的方法，包括如下步骤：
S1.将硅片平躺放置在采用中空设计且仅与硅片四周边缘位置接触的载板上并输送至工艺腔内；
S2.对工艺腔进行抽真空；
S3.从工艺腔底部向工艺腔内通入工艺气体并进入电离区，通过位于硅片上侧面的加热装置对硅片进行加热，并通过位于硅片下侧的电极放电激发工艺气体以在电极和硅片之间形成含有等离子体的反应区域，在反应区域内采用PECVD工艺或PVD工艺从下往上在硅片表面沉积薄膜，可采用连续动态镀膜方式或静态镀膜方式且载板尺寸可根据要求调整以满足不同产量需求，且反应后的气体从工艺腔侧面或上面经真空泵抽出。
本发明还提供了一种沉积掺杂非晶硅薄膜无绕镀的装置，包括输送系统和反应系统；
所述输送系统包括水平输送线和水平放置在所述水平输送线上的载板；其中，载板采用中空设计且仅与硅片四周边缘位置接触，在对硅片起到支撑作用的同时对其边缘起到包裹遮盖的目的；
所述反应系统包括工艺腔，连通所述工艺腔的真空装置，设置在所述工艺腔内部上方的加热装置，设置在所述工艺腔内部下方的电极，以及设置在所述工艺腔下侧的出气口，所述工艺腔的出气口连通至供气装置。
其中，所述真空装置的抽真空口设置在所述工艺腔的上面或侧面。
其中，所述载板采用碳纤维材料制作而成，碳纤维能承受工艺高温的同时保持不变性。
本发明还提供了一种太阳能电池片的掺杂非晶硅薄膜，其采用上述装置及方法制备而成。
本发明还提供了一种太阳能电池，如TOPCon电池、HIT电池、PERC电池等，其具有上述结构的掺杂非晶硅薄膜。
通过上述技术方案，本发明使用PECVD或PVD方法沉积掺杂非晶硅薄膜，硅片平躺放置在载板上，载板采用中空设计，在对硅片四周边缘位置起到支撑作用的同时对其边缘起到包裹遮盖的目的，在等离子气氛中镀膜时，工艺腔内采用从下到上沉积薄膜的方式，由此解决沉积镀膜过程中硅片侧面甚至是非沉积面的绕镀问题，且可以实现装载有硅片的载板在镀膜区连续经过而实现动态连续镀膜，极大提高了镀膜质量及效率。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。
图1为本发明实施例所公开的装置上方抽真空结构示意图；
图2为本发明实施例所公开的装置侧面抽真空结构示意图。
图中数字表示：10.硅片；20.工艺腔；30.真空装置；40.加热装置；50.供气装置；60.电极；70.反应区域。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。
实施例1：
参考图1或2所示的沉积掺杂非晶硅薄膜无绕镀的装置，本发明提供了一种基于PECVD的沉积掺杂非晶硅薄膜无绕镀的方法，包括如下步骤：
S1.将硅片10平躺放置在采用中空设计且仅与硅片10四周边缘位置接触的载板上并输送至工艺腔20内；其中，载板采用碳纤维材料制作而成且采用中空设计，其仅与硅片10四周边缘位置接触，在对硅片10起到支撑作用的同时对其边缘起到包裹遮盖的目的；
S2.采用真空装置30对工艺腔20进行抽真空；
S3.通过供气装置50从工艺腔20底部向工艺腔20内通入通过氢气等载气导入的硅烷或含硅的气体作为前质气体，并通入磷烷或含磷的气体(或者，通入硼烷或含硼的气体)作为掺杂气体，前质气体和掺杂气体进入电离区，并通过位于硅片10上侧面的加热装置40对硅片10进行加热，开启电源并通过位于硅片10下侧的电极60放电将前质气体和掺杂气体激发成活性离子并在反应区域70内真空环境下互相碰撞反应，从下往上在硅片10表面沉积形成掺杂非晶硅薄膜。
实施例2：
本实施例2与实施例1的不同之处在于，本实施例2基于PVD方式完成镀膜，其步骤S3中，使用固体硅或掺有磷(或硼)的硅作为靶材，通过供气装置50从工艺腔20底部通入氩气作为工作气体，在真空环境中，氩气在离子源激发下发生电离并撞击靶材，在反应区域70内使得硅源被溅射下来并从下往上沉积到硅片10的下表面裸露区域，由此形成非晶硅膜(或掺杂非晶硅膜)；此外，为了保证磷(或硼)的掺杂量，可以在氩气中预先混入一定比例的磷烷(硼烷)。
实施例3：
本发明还提供了一种太阳能电池片的掺杂非晶硅薄膜，其基于实施例1或2的装置及方法制备而成。
实施例4：
本发明还提供了一种太阳能电池，其具有实施例3所述结构的掺杂非晶硅薄膜，太阳能电池为TOPCon电池、HIT电池、PERC电池等。
本发明使用PECVD或PVD方法沉积掺杂非晶硅薄膜，硅片10平躺放置在载板上，载板采用碳纤维材料制作而成，碳纤维能承受工艺高温的同时保持不变性，且采用中空设计在对硅片10四周边缘位置起到支撑作用的同时对其边缘起到包裹遮盖的目的，在等离子气氛中镀膜时，工艺腔20内采用从下到上沉积薄膜的方式，由此解决沉积镀膜过程中硅片10侧面甚至是非沉积面的绕镀问题，且可以实现装载有硅片10的载板在镀膜区连续经过而实现动态连续镀膜，极大提高了镀膜质量及效率。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对上述实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (8)

1.一种沉积掺杂非晶硅薄膜无绕镀的方法，其特征在于，包括如下步骤：
S1.将硅片(10)平躺放置在采用中空设计且仅与硅片(10)四周边缘位置接触的载板上并输送至工艺腔(20)内；
S2.对工艺腔(20)进行抽真空；
S3.从工艺腔(20)底部向工艺腔(20)内通入工艺气体并进入电离区，通过位于硅片(10)上侧面的加热装置(40)对硅片(10)进行加热，并通过位于硅片(10)下侧的电极(60)放电激发工艺气体以在电极(60)和硅片(10)之间形成含有等离子体的反应区域(70)，在反应区域(70)内从下往上在硅片(10)表面沉积薄膜。
2.根据权利要求1所述的一种沉积掺杂非晶硅薄膜无绕镀的方法，其特征在于，步骤S3中，采用PECVD工艺或PVD工艺。
3.根据权利要求1所述的一种沉积掺杂非晶硅薄膜无绕镀的方法和装置，其特征在于，反应后的气体从工艺腔(20)侧面或上面经真空泵抽出。
4.一种沉积掺杂非晶硅薄膜无绕镀的装置，其特征在于，包括输送系统和反应系统；
所述输送系统包括水平输送线和水平放置在所述水平输送线上的载板；其中，载板采用中空设计且仅与硅片(10)四周边缘位置接触，在对硅片(10)起到支撑作用的同时对其边缘起到包裹遮盖的目的；
所述反应系统包括工艺腔(20)，连通所述工艺腔(20)的真空装置(30)，设置在所述工艺腔(20)内部上方的加热装置(40)，设置在所述工艺腔(20)内部下方的电极(60)，以及设置在所述工艺腔(20)下侧的出气口，所述工艺腔(20)的出气口连通至供气装置(50)。
5.根据权利要求4所述的一种沉积掺杂非晶硅薄膜无绕镀的装置，其特征在于，所述真空装置(30)的抽真空口设置在所述工艺腔(20)的上面或侧面。
6.根据权利要求4所述的一种沉积掺杂非晶硅薄膜无绕镀的装置，其特征在于，所述载板采用碳纤维材料制作而成。
7.一种太阳能电池片的掺杂非晶硅薄膜，其特征在于，采用权利要求4的装置及权利要求1的方法制备而成。
8.一种太阳能电池，其特征在于，具有权利要求7所述结构的掺杂非晶硅薄膜。
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