CN112346161A - Infrared stealthy structure that possesses electromagnetic pulse protective capability - Google Patents
Infrared stealthy structure that possesses electromagnetic pulse protective capability Download PDFInfo
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- CN112346161A CN112346161A CN202011125745.2A CN202011125745A CN112346161A CN 112346161 A CN112346161 A CN 112346161A CN 202011125745 A CN202011125745 A CN 202011125745A CN 112346161 A CN112346161 A CN 112346161A
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- electromagnetic pulse
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/0056—Casings specially adapted for microwave applications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
Abstract
The invention relates to an infrared stealth structure with electromagnetic pulse protection capability, which comprises a plasma electromagnetic pulse protection layer and a photonic crystal stealth film, wherein the photonic crystal stealth film is attached to the plasma electromagnetic pulse protection layer; electromagnetic pulse protection is realized by utilizing a plasma layer, and far infrared band invisibility is realized by utilizing photonic crystals; the plasma electromagnetic pulse protective layer is formed by arranging and combining a plurality of cylindrical dielectric tubes, alternating voltage is applied to two ends of each dielectric tube to enable gas to be broken down so as to form columnar plasma, the alternating voltage adjusting range of the two ends of each dielectric tube is 200V-300V, the frequency is about 40-100 kHz, and the plasma density in each dielectric tube is 1.0 multiplied by 1017/m3‑1.0×1019/m3. The stealth structure has good infrared stealth performanceMeanwhile, effective protection on strong electromagnetic pulses can be realized.
Description
Technical Field
The invention relates to the technical field of military stealth, in particular to an infrared stealth structure with electromagnetic pulse protection capability.
Background
With the development of infrared reconnaissance and precision guidance technologies, military objects, once exposed, are often meant to be struck. In order to improve the battlefield viability of military targets, effective infrared stealth measures must be taken. Meanwhile, due to the gradual application of electromagnetic pulse weapons, the striking damage of the electromagnetic pulse weapons on electronic equipment cannot be ignored.
However, the conventional techniques have significant disadvantages. Firstly, the traditional electromagnetic pulse protection material is difficult to be applied to radar antenna equipment, and the normal work of the radar antenna is influenced and the signal receiving and transmitting of the antenna are influenced by the use of any material. Secondly, in general, in order to realize infrared stealth, metal powder needs to be added into the material, but the increase of the content of the metal powder inevitably reduces the radar stealth performance of the coating. In order to solve the problem, the photonic crystal material technology is adopted to realize infrared stealth, the photonic crystal material has the advantages of good infrared stealth performance and radar wave transmission, and the compatibility of the infrared stealth and the radar stealth can be realized; meanwhile, the plasma technology is adopted to realize the electromagnetic pulse protection, and the plasma protection device has the advantages of adjustability and controllability, can realize the electromagnetic pulse protection, and can not influence the work of the radar of our party.
Disclosure of Invention
The invention aims to provide an infrared stealth structure with electromagnetic pulse protection capability, which has good infrared stealth performance and can realize effective protection on strong electromagnetic pulse.
In order to solve the technical problems, the invention adopts the following technical scheme:
an infrared stealth structure with electromagnetic pulse protection capability comprises a plasma electromagnetic pulse protection layer and a photonic crystal stealth film, wherein the photonic crystal stealth film is attached to the plasma electromagnetic pulse protection layer; electromagnetic pulse protection is realized by utilizing a plasma layer, and far infrared band invisibility is realized by utilizing photonic crystals; the plasma electromagnetic pulse protective layer is formed by arranging and combining a plurality of cylindrical medium pipes, and adjacent medium pipes need to be tightly combined to avoid electromagnetic pulse leakage;
applying alternating voltage to two ends of the medium tube to make the gas breakdown to form columnar plasma, wherein the alternating voltage at two ends of the medium tube is adjusted to be 200V-300V, the frequency is about 40-100 kHz, and the plasma density in the medium tube is 1.0 multiplied by 1017/m3-1.0×1019/m3。
In the scheme, the photonic crystal stealth film is made of non-metallic materials with high refractive index and low refractive index, wherein the emissivity of a far infrared band is less than or equal to 0.4, and the radar wave transmittance of 2-18GHz is more than or equal to 98%.
In the scheme, the diameter of the cylindrical medium pipe is 2-4 cm, the medium pipe is filled with rare gas He, Ne, Ar, Kr, Xe or Hg, and the gas pressure is usually 5-10 torr.
In the scheme, the plasma can respectively form the two-dimensional flat-plate structure electromagnetic pulse protective layer and the three-dimensional curved surface structure electromagnetic pulse protective layer through different arrangement combinations of the plurality of cylindrical dielectric pipes.
In the scheme, the plasma arrays are closely arranged to form a combined plasma screen, and the plasma screen comprises a protection working state and a transparent working state; wherein, the shielding effectiveness of the protection state to the electromagnetic pulse is more than or equal to 10dB, and the radar wave transmittance of the transparent state at 2-18GHz is more than or equal to 98%.
The invention has the beneficial effects that: according to the far infrared stealth structure with the electromagnetic pulse protection capability, the electromagnetic pulse protection is realized by utilizing plasma, the stealth of far infrared equal optical wave bands is realized by utilizing photonic crystals, the photonic crystal film and the plasma layer are mutually compatible, the photonic crystal film allows radar waves to be transmitted without damage, and meanwhile, the radiation of visible light, infrared equal optical wave bands of the plasma is inhibited; compared with the traditional electromagnetic pulse protection material, the plasma layer is controllable and adjustable, so that the radar work is not influenced, and the strong electromagnetic pulse can be protected. Through reasonable design, the scheme can realize electromagnetic pulse protection and far infrared stealth compatibility, thereby improving the battlefield viability of the weapon.
Drawings
FIG. 1 is a schematic diagram of a far infrared stealth structure with electromagnetic pulse protection capability according to the present invention;
FIG. 2 is a schematic diagram of a plasma electromagnetic pulse shielding layer;
FIG. 3 illustrates the shielding effectiveness of the shielding layer of the plasma electromagnetic pulse for the nuclear electromagnetic pulse;
FIG. 4 is a schematic diagram of a photonic crystal infrared stealth layer structure;
FIG. 5 is an infrared spectrum actually obtained from a far infrared stealth layer of a certain type of photonic crystal;
fig. 6 shows the absorption spectrum of radar waves in a non-working state of the far infrared stealth structure with electromagnetic pulse protection capability.
Detailed Description
The invention will be further illustrated with reference to specific embodiments:
as shown in fig. 1-6, the plasma stealth film comprises a plasma stealth layer 1 and a photonic crystal stealth film 2, the photonic crystal stealth film 2 is attached on the plasma stealth layer 1, reference numeral 3 in fig. 1 represents a stealth target, and an arrow represents a radar detection signal.
Fig. 2 shows a schematic structure diagram of a plasma electromagnetic pulse protection layer. The plasma electromagnetic pulse protective layer is formed by arranging and combining a plurality of cylindrical medium pipes with the diameter of 2-4 cm, the length determined according to the size of an application object and filled with rare gas (He, Ne, Ar, Kr and Xe) or Hg steam according to a certain rule. Alternating voltage is applied to two ends of the medium tube, so that gas is broken down to form columnar plasma, and the electron density of the plasma is controlled by adjusting the current voltage value, so that the electromagnetic pulse protection performance of the plasma is controlled. Adjusting the range of the alternating voltage at two ends of the medium tube: 200V to 300V, and the frequency is about 40 to 100 kHz. The columnar plasmas are arranged according to different rules and can respectively form a two-dimensional flat plate structure electromagnetic pulse protective layer and a three-dimensional curved surface structure electromagnetic pulse protective layer.
FIG. 3 shows a curve of shielding effectiveness of a two-dimensional flat-plate structured plasma electromagnetic pulse shielding layer with certain parameters measured by a nuclear electromagnetic pulse simulator for incident nuclear electromagnetic pulses, wherein the plasma density in a single dielectric tube is 2.0 × 10 per cubic meter18And (4) electrons. It can be seen that the shielding effectiveness of the plasma electromagnetic pulse protective layer for the incident nuclear electromagnetic pulse is more than 10 dB.
Fig. 4 shows a schematic structural diagram of an infrared stealth layer of a photonic crystal. The photonic crystal infrared stealth layer structure is a photonic crystal with a SUB | (H1L1) ^2(H1L1) ^2(H2L2) ^4| AIR) structure, wherein H and L respectively represent two different materials, the refractive index of the H material is 4-6, and the refractive index of the L material is 1-3; SUB represents the substrate, AIR represents AIR, the number after "" is the number of cycles, H1 and H2 represent different thicknesses of H material, and similarly, H1 and H2 represent different thicknesses of H, which together constitute a high reflection in the far infrared band.
FIG. 6 shows the IR spectrum of the IR stealth layer of the photonic crystal as described above, as measured by a Fourier transform IR spectrometer.
The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solution of the present invention by those skilled in the art should fall within the protection scope defined by the claims of the present invention without departing from the spirit of the present invention.
Claims (5)
1. The utility model provides an infrared stealth structure that possesses electromagnetic pulse protective capability which characterized in that: the photonic crystal invisible film is attached to the plasma electromagnetic pulse protective layer; electromagnetic pulse protection is realized by utilizing a plasma layer, and far infrared band invisibility is realized by utilizing photonic crystals;
the plasma electromagnetic pulse protective layer is formed by arranging and combining a plurality of cylindrical dielectric tubes, alternating voltage is applied to two ends of each dielectric tube to enable gas to be broken down so as to form columnar plasma, the alternating voltage adjusting range of the two ends of each dielectric tube is 200V-300V, the frequency is about 40-100 kHz, and the plasma density in each dielectric tube is 1.0 multiplied by 1017/m3-1.0×1019/m3。
2. The infrared stealth structure with electromagnetic pulse protection capability of claim 1, wherein: the photonic crystal stealth film is made of nonmetal materials with high refractive index and low refractive index, wherein the emissivity of a far infrared band is less than or equal to 0.4, and the radar wave transmittance of 2-18GHz is more than or equal to 98%.
3. The infrared stealth structure with electromagnetic pulse protection capability of claim 1, wherein: the diameter of the cylindrical medium pipe is 2-4 cm, and the inside of the cylindrical medium pipe is filled with rare gas He, Ne, Ar, Kr, Xe or Hg.
4. The infrared stealth structure with electromagnetic pulse protection capability of claim 1, wherein: the plasma can respectively form a two-dimensional flat plate structure electromagnetic pulse protective layer and a three-dimensional curved surface structure electromagnetic pulse protective layer through different arrangement and combination of a plurality of cylindrical medium pipes.
5. The infrared stealth structure with electromagnetic pulse protection capability of claim 1, wherein: the plasma arrays are closely arranged to form a combined plasma screen, and the plasma screen comprises a protection working state and a transparent working state; wherein, the shielding effectiveness of the protection state to the electromagnetic pulse is more than or equal to 10dB, and the radar wave transmittance of the transparent state at 2-18GHz is more than or equal to 98%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011125745.2A CN112346161A (en) | 2020-10-20 | 2020-10-20 | Infrared stealthy structure that possesses electromagnetic pulse protective capability |
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| CN202011125745.2A CN112346161A (en) | 2020-10-20 | 2020-10-20 | Infrared stealthy structure that possesses electromagnetic pulse protective capability |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102307425A (en) * | 2011-06-24 | 2012-01-04 | 北京大学 | Combinable array plasma generating device |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102307425A (en) * | 2011-06-24 | 2012-01-04 | 北京大学 | Combinable array plasma generating device |
Non-Patent Citations (2)
| Title |
|---|
| 强勇等: "等离子体选择性隐身技术在未来陆军装备的应用分析", 《火控雷达技术》 * |
| 程立等: "等离子体柱阵列应用于目标隐身的可行性分析", 《舰船电子对抗》 * |
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