CN112332822B - Junction capacitance compensation calculation method for multi-transistor parallel-connection cascode power device - Google Patents

Junction capacitance compensation calculation method for multi-transistor parallel-connection cascode power device Download PDF

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CN112332822B
CN112332822B CN202011188228.XA CN202011188228A CN112332822B CN 112332822 B CN112332822 B CN 112332822B CN 202011188228 A CN202011188228 A CN 202011188228A CN 112332822 B CN112332822 B CN 112332822B
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宋瑞杰
朱田华
王丰
檀三强
朱忠伟
姚平
姚建明
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Jiangsu Yinjia Electronic Equipment Co ltd
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Abstract

The invention discloses a junction capacitance compensation calculation method of a multi-transistor parallel cascode power device, which comprises the following steps: s1: acquiring the sum of capacitance values of low-voltage side capacitors of the cascode power devices; s2: comparing the sum of the capacitance values of the low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors; s3: when the comparison results are equal, the capacitor matching is directly carried out, and when the comparison results are unequal, the capacitor matching is carried out according to the parallel compensation capacitors; s4: and obtaining the parallel compensation capacitor according to the sum of the capacitance values of the low-voltage side capacitor, the sum of the capacitance values of the high-voltage side capacitor and the capacitor matching. According to the invention, the drain and source electrodes of the low-voltage silicon MOSFET are connected with the compensation capacitor in parallel, so that the capacity of the junction capacitor of the low-voltage silicon MOSFET can be equivalently increased, the junction capacitors of the low-voltage silicon MOSFET and the plurality of parallel high-voltage depletion transistors are matched, and the avalanche breakdown problem of the low-voltage silicon MOSFET is effectively solved, and the reliability and stability of the power device are improved.

Description

Junction capacitance compensation calculation method for multi-transistor parallel-connection cascode power device
Technical Field
The invention relates to the technical field of wide-bandgap semiconductor devices, in particular to a junction capacitance compensation calculation method for a multi-transistor parallel-connection cascode power device.
Background
In the use of the multi-transistor parallel-connection type common-source and common-gate gallium nitride device, if the drain-source junction capacitance capacity of the low-voltage silicon MOSFET is not matched with the junction capacitance capacities of the plurality of parallel-connection high-voltage depletion type gallium nitride transistors, avalanche breakdown occurs before the high-voltage depletion type gallium nitride transistor reaches the direct-current side voltage of the low-voltage silicon MOSFET, and voltage and current oscillation is caused. Compared with the traditional common-source common-gate gallium nitride device, the parallel connection of a plurality of high-voltage depletion type gallium nitride transistors enables the total electric charge quantity of the junction capacitor to be multiplied along with the parallel connection, and the electric charge quantity is far more than that of the low-voltage silicon MOSFET to reach the rated drain-source voltage, so that avalanche breakdown phenomenon is easier to occur.
Disclosure of Invention
The invention aims to: aiming at the avalanche breakdown problem of a low-voltage silicon MOSFET, the invention provides a method for calculating the junction capacitance compensation of a multi-transistor parallel-connection cascode power device, which meets the requirement of charge balance by calculating and connecting the compensation capacitance in parallel and improves the efficiency, the power density, the reliability and the stability of the device.
The technical scheme is as follows: in order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows:
a junction capacitance compensation calculation method for a multi-transistor parallel-connection cascode power device specifically comprises the following steps:
s1: acquiring the sum of capacitance values of low-voltage side capacitors of the cascode power devices;
s2: comparing the sum of the capacitance values of the low-voltage side capacitors with the sum of the capacitance values of the high-voltage side capacitors, executing the step S3 when the comparison results are unequal, and executing the step S4 when the comparison results are equal;
s3: when the comparison results are equal, directly performing capacitance matching, and when the comparison results are unequal, performing capacitance matching according to the parallel compensation capacitance;
s4: and obtaining the parallel compensation capacitor according to the sum of the capacitance values of the low-voltage side capacitor, the sum of the capacitance values of the high-voltage side capacitor and the capacitor matching.
Further, in the step S1, the capacitance sum calculation formula of the low-voltage side capacitor and the capacitance sum calculation formula of the high-voltage side capacitor are specifically:
C low ＝C oss_Si +N·C GS_GaN ＝C DS_Si +C GD_Si +N·C GS_GaN
C high ＝N·C DS_GaN
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, C high Is the sum of the capacitance values of the high-voltage side capacitors, C oss_Si Is of low pressureSilicon MOSFET output capacitor, N is the parallel number of high-voltage depletion type gallium nitride transistors, C GS_GaN C is the junction capacitance of the grid and the source electrode of the high-voltage depletion type gallium nitride transistor DS_Si C is the drain-source junction capacitance of the low-voltage silicon MOSFET GD_Si C is the low-voltage silicon MOSFET gate-drain junction capacitance DS_GaN Drain-source junction capacitance for a single high voltage depletion type gallium nitride transistor.
Furthermore, in the step S3, the parallel compensation capacitor is parallel to the low-voltage side total capacitor, and when the low-voltage silicon MOSFET breaks down in an avalanche, the external power supply of the cascode power device charges the series circuit formed by the low-voltage side total capacitor and the high-voltage side total capacitor.
Further, when the comparison result is unequal, the total charge between the sum of the capacitance values of the corresponding low-voltage side capacitor and the sum of the capacitance values of the corresponding high-voltage side capacitor is not greater than the charge amount which can be born by the parallel compensation capacitor in the charging process, and when the comparison result is unequal, a calculation formula corresponding to the capacitance matching is performed, specifically:
(C low +C comp )(V ava -V th_GaN )＝C high (V in -V ava )
Q mismatch ≤C comp (V ava -V th_GaN )
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, C comp To compensate the capacitance of the capacitor in parallel, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN Threshold voltage of high-voltage depletion type gallium nitride transistor, C high Is the sum of the capacitance values of the high-voltage side capacitors, V in For the amplitude of the external voltage source, Q mismatch The total charge between the sum of the capacitance values of the corresponding low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors is obtained when the comparison results are unequal.
Further, in the step S3, when the comparison results are equal, the capacitance matching is directly performed, which is specifically as follows:
SA3.1: turning off the low-voltage silicon MOSFET, and charging the total capacitance of the low-voltage side by the external power supply until the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor is lower than the threshold voltage of the high-voltage depletion type gallium nitride transistor;
SA3.2: and switching off the channel of the high-voltage depletion type gallium nitride transistor, and charging a serial circuit consisting of the low-voltage side total capacitance and the high-voltage side total capacitance by the external power supply until the voltage of the serial circuit consisting of the low-voltage side total capacitance and the high-voltage side total capacitance is the same as the amplitude of an external voltage source.
Further, in the step S3, when the comparison result is unequal, the capacitance matching is performed according to the parallel compensation capacitance, specifically:
and the external power supply charges the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor through the diode, and the charged charge is the total charge between the sum of the capacitance values of the corresponding low-voltage side capacitance and the sum of the capacitance values of the high-voltage side capacitance when the comparison result is unequal, until the voltage of a series circuit formed by the low-voltage side total capacitance and the high-voltage side total capacitance is the same as the amplitude of the external voltage source.
Furthermore, the external power supply charges the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor through the diode, and the charging formula specifically comprises:
C low (V ava -V th_GaN )＝C high V 1_GaN
Q mismatch ＝C high (V in -V ava -V 1_GaN )
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN Threshold voltage of high-voltage depletion type gallium nitride transistor, C high Is the sum of the capacitance values of the high-voltage side capacitors, V 1_GaN Drain-source voltage, Q of high-voltage depletion type gallium nitride transistor in avalanche of low-voltage silicon MOSFET mismatch For the total charge between the sum of the capacitance values of the corresponding low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors when the comparison results are unequal, V in Is the external voltage source amplitude.
Furthermore, the calculation formula of the drain-source voltage of the high-voltage depletion gallium nitride transistor in the avalanche process of the parallel compensation capacitor and the low-voltage silicon MOSFET is specifically as follows:
Figure BDA0002751946080000031
Figure BDA0002751946080000032
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wherein: c (C) comp To compensate the capacitance of the capacitor in parallel, V 1_GaN Drain-source voltage, C of high-voltage depletion type gallium nitride transistor in avalanche of low-voltage silicon MOSFET high Is the sum of the capacitance values of the high-voltage side capacitors, V in For the amplitude of the external voltage source, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN The threshold voltage of the high-voltage depletion type gallium nitride transistor is N, the number of the high-voltage depletion type gallium nitride transistors connected in parallel is C DS_GaN C is the drain-source junction capacitance of a single high-voltage depletion type gallium nitride transistor low Is the sum of the capacitance values of the low-voltage side capacitors, C oss_Si Output capacitance for low-voltage silicon MOSFET, C GS_GaN Is the high-voltage depletion type gallium nitride transistor gate-source junction capacitance.
The beneficial effects are that: compared with the prior art, the technical scheme of the invention has the following beneficial technical effects:
according to the method, the required compensation capacitance value is calculated according to the principle of junction capacitance matching, the capacitance of the junction capacitance can be equivalently increased by connecting the compensation capacitance of the capacitance value in parallel with the drain and the source of the low-voltage silicon MOSFET, and the junction capacitance matching of the low-voltage silicon MOSFET and a plurality of parallel high-voltage depletion transistors is realized, so that the avalanche breakdown problem of the low-voltage silicon MOSFET is effectively solved, and the reliability and the stability of the power device are improved.
Drawings
Fig. 1 is a schematic diagram of junction capacitance compensation of a multi-transistor parallel cascode gan power device of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Wherein the described embodiments are some, but not all embodiments of the invention. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.
Example 1
Referring to FIG. 1, the present embodiment provides a junction capacitance compensation calculation method for a multi-transistor parallel cascode power device, where the junction capacitance compensation calculation method is applicable to a cascode power device with N (N is greater than or equal to 2) high-voltage depletion transistors connected in parallel. In this embodiment, a cascode device in which two high-voltage gan depletion transistors are connected in parallel is taken as an example, and the circuit structure is shown in fig. 1. Parallel connection of depletion type gallium nitride transistors leads to sum Sigma C of capacitance values of high-voltage side capacitor DSN With the increase of the parallel number, the compensation capacitance needs to be increased to prevent the avalanche breakdown of a single low-voltage silicon MOSFET. The compensation capacitor to be applied is connected in parallel between the drain and source electrodes of the low-voltage silicon MOSFET, and the capacitor with smaller volume should be preferentially selected to reduce the power density and facilitate heat dissipation because of the operation at the packaging level, and stray inductance caused by wiring, wire bonding and the like should be reduced as much as possible when the capacitors are connected. The junction capacitance compensation calculation method specifically comprises the following steps:
step S1: the capacitance sum of the low-voltage side capacitor of the cascode power device and the capacitance sum of the high-voltage side capacitor of the cascode power device are obtained, and the capacitance sum calculation formula of the low-voltage side capacitor and the capacitance sum calculation formula of the high-voltage side capacitor are specifically:
C low ＝C oss_Si +N·C GS_GaN ＝C DS_Si +C GD_Si +N·C GS_GaN
C high ＝N·C DS_GaN
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, C high Capacitance value of high-voltage side capacitorSum, C oss_Si The output capacitance of the low-voltage silicon MOSFET is that N is the parallel connection number of high-voltage depletion type gallium nitride transistors, C GS_GaN C is the junction capacitance of the grid and the source electrode of the high-voltage depletion type gallium nitride transistor DS_Si C is the drain-source junction capacitance of the low-voltage silicon MOSFET GD_Si C is the low-voltage silicon MOSFET gate-drain junction capacitance DS_GaN Drain-source junction capacitance for a single high voltage depletion type gallium nitride transistor.
Step S2: according to the sum C of the capacitance values of the low-voltage side capacitors obtained in the step S1 low Sum of capacitance C of high-voltage side capacitor high And comparing the size with the comparison result, and executing different operations according to different comparison results.
Step S3: and when the comparison results are equal, the capacitor matching is directly carried out, and when the comparison results are unequal, the capacitor matching is carried out according to the parallel compensation capacitors. The method comprises the following steps:
when the power device in the circuit is turned off, an external direct current power supply charges the junction capacitor, if the sum of the capacitance values of the low-voltage side capacitor and the sum of the capacitance values of the high-voltage side capacitor are not matched, the low-voltage silicon MOSFET can be caused to avalanche breakdown before the turn-off process is charged, extra power loss is caused, and the efficiency and the power density of the power device are reduced. The capacitor matching is realized through the parallel compensation capacitor, so that the reliability and stability of the power device can be effectively improved.
In this embodiment, the parameters of the two parallel high-voltage depletion gallium nitride transistors are identical, i.e. the junction capacitance is correspondingly equal, the voltages at two ends are equal, and no internal circulation exists. The requirement of the capacitance matching is that when the power device is turned off, the charges stored in the drain-source junction capacitors of the two high-voltage depletion type gallium nitride transistors are lower than the sum of the charges stored in the two junction capacitors of the gate-source junction capacitors of the transistors and the output capacitor of the low-voltage silicon MOSFET.
Specifically, when the comparison results are equal, the capacitance matching is directly performed, specifically:
step SA3.1: under the condition of capacitance matching, after the low-voltage silicon MOSFET is turned off, an external power supply can charge the total capacitance of the low-voltage side first until the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor is lower than the threshold voltage of the high-voltage depletion type gallium nitride transistor.
Step SA3.2: after the charging in step SA3.1 is completed, the channel of the high-voltage depletion gallium nitride transistor is turned off, and at this time, the external power supply charges the series loop formed by the low-voltage side total capacitance and the high-voltage side total capacitance until the voltage of the series loop formed by the low-voltage side total capacitance and the high-voltage side total capacitance is the same as the amplitude of the external voltage source.
When the comparison results are unequal, carrying out capacitance matching according to the parallel compensation capacitance, specifically:
the low-voltage side capacitor is connected with the high-voltage side capacitor in series, the charge change rate is equal, and when the low-voltage side capacitor is reduced, the voltage change of the low-voltage side capacitor is accelerated, so that the capacitors are not matched. When the capacitors are not matched, the low-voltage side capacitor voltage is raised to the low-voltage silicon MOSFET avalanche voltage before charging in step SA3.2, the body diode avalanche breakdown is conducted, and the high-voltage side capacitor voltage is the drain-source voltage of the high-voltage depletion type gallium nitride transistor in the low-voltage silicon MOSFET avalanche.
Meanwhile, an external power supply charges the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor through a diode until the voltage of a series circuit formed by the low-voltage side total capacitance and the high-voltage side total capacitance is the same as the amplitude of the external voltage source. It is noted that the charged charge is the total charge between the sum of the capacitance values of the low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors corresponding to the unequal comparison result.
In this embodiment, the charging process in the above process may be represented by the following formula, specifically:
C low (V ava -V th_GaN )＝C high V 1_GaN
Q mismatch ＝C high (V in -V ava -V 1_GaN )
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN Threshold voltage of high-voltage depletion type gallium nitride transistor, C high Is high enough toSum of capacitance of voltage side capacitor, V 1_GaN Drain-source voltage, Q of high-voltage depletion type gallium nitride transistor in avalanche of low-voltage silicon MOSFET mismatch For the total charge between the sum of the capacitance values of the corresponding low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors when the comparison results are unequal, V in Is the external voltage source amplitude.
Specifically, when the comparison result is that the sum of the capacitance values of the low-voltage side capacitor and the sum of the capacitance values of the high-voltage side capacitor are not equal, the total charge between the sum of the capacitance values of the low-voltage side capacitor and the sum of the capacitance values of the high-voltage side capacitor flows through the body diode to cause additional power loss, so that the efficiency is reduced, the heat dissipation requirement is improved, and the power density of the device is reduced.
In this embodiment, when the capacitors are not matched, the capacitors are compensated, the parallel compensation capacitors are parallel connected with the low-voltage side total capacitor, and when the low-voltage silicon MOSFET is subjected to avalanche breakdown, the external power supply of the cascode power device charges the series circuit formed by the low-voltage side total capacitor and the high-voltage side total capacitor. This process can be expressed by the following formula, specifically:
(C low +C comp )(V ava -V th_GaN )＝C high (V in -V ava )
Q mismatch ≤C comp (V ava -V th_GaN )
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, C comp To compensate the capacitance of the capacitor in parallel, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN Threshold voltage of high-voltage depletion type gallium nitride transistor, C high Is the sum of the capacitance values of the high-voltage side capacitors, V in For the amplitude of the external voltage source, Q mismatch The total charge between the sum of the capacitance values of the corresponding low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors is obtained when the comparison results are unequal.
Step S4: according to the two formulas in the step S3, the following 1 can be obtained, namely, the parallel compensation capacitor is obtained, specifically:
Figure BDA0002751946080000061
Figure BDA0002751946080000062
wherein: c (C) comp To compensate the capacitance of the capacitor in parallel, V 1_GaN Drain-source voltage, C of high-voltage depletion type gallium nitride transistor in avalanche of low-voltage silicon MOSFET high Is the sum of the capacitance values of the high-voltage side capacitors, V in For the amplitude of the external voltage source, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN The threshold voltage of the high-voltage depletion type gallium nitride transistor is N, the number of the high-voltage depletion type gallium nitride transistors connected in parallel is C DS_GaN C is the drain-source junction capacitance of a single high-voltage depletion type gallium nitride transistor low Is the sum of the capacitance values of the low-voltage side capacitors, C oss_Si Output capacitance for low-voltage silicon MOSFET, C GS_GaN Is the high-voltage depletion type gallium nitride transistor gate-source junction capacitance.
In this embodiment, the first formula in the above formula is shown as the calculation method of the parallel compensation capacitance. According to the calculation method, the value range of the parallel compensation capacitor can be determined, the capacitor matching is realized by selecting a smaller capacitor within the range, and the stability of the power device is improved while the better heat dissipation capacity and the higher power density are ensured.
The invention and its embodiments have been described above by way of illustration and not limitation, and the actual construction and method of construction illustrated in the accompanying drawings is not limited to this. Therefore, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical scheme are not creatively designed without departing from the gist of the present invention, and all the structural manners and the embodiments belong to the protection scope of the present invention.

Claims (7)

1. A junction capacitance compensation calculation method of a multi-transistor parallel-connection cascode power device is characterized by comprising the following steps of: the junction capacitance compensation calculation method specifically comprises the following steps:
s1: acquiring the sum of capacitance values of low-voltage side capacitors of the cascode power devices;
s2: comparing the sum of the capacitance values of the low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors;
s3: when the comparison results are equal, the capacitor matching is directly carried out, and when the comparison results are unequal, the capacitor matching is carried out according to the parallel compensation capacitors;
s4: obtaining a parallel compensation capacitor according to the sum of the capacitance values of the low-voltage side capacitor, the sum of the capacitance values of the high-voltage side capacitor and the capacitor matching;
in step S1, the capacitance sum calculation formula of the low-voltage side capacitor and the capacitance sum calculation formula of the high-voltage side capacitor are specifically:
Figure QLYQS_1
；
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, C high Is the sum of the capacitance values of the high-voltage side capacitors, C oss_Si The output capacitance of the low-voltage silicon MOSFET is that N is the parallel connection number of high-voltage depletion type gallium nitride transistors, C GS_GaN C is the junction capacitance of the grid and the source electrode of the high-voltage depletion type gallium nitride transistor DS_Si C is the drain-source junction capacitance of the low-voltage silicon MOSFET GD_Si C is the low-voltage silicon MOSFET gate-drain junction capacitance DS_GaN Drain-source junction capacitance for a single high voltage depletion type gallium nitride transistor.
2. The method for calculating junction capacitance compensation of a multi-transistor parallel cascode power device according to claim 1, wherein: in the step S3, the parallel compensation capacitor is parallel to the low-voltage side total capacitor, and when the low-voltage silicon MOSFET breaks down in an avalanche, the external power supply of the cascode power device charges the serial circuit formed by the low-voltage side total capacitor and the high-voltage side total capacitor.
3. The method for calculating junction capacitance compensation of a multi-transistor parallel cascode power device according to claim 2, wherein: and when the comparison result is unequal, performing a calculation formula corresponding to capacitance matching, wherein the total charge between the sum of the capacitance values of the corresponding low-voltage side capacitors and the sum of the capacitance values of the corresponding high-voltage side capacitors is not greater than the charge quantity which can be born by the parallel compensation capacitors in the charging process, and the calculation formula is specifically as follows:
Figure QLYQS_2
；
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, C comp To compensate the capacitance of the capacitor in parallel, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN Threshold voltage of high-voltage depletion type gallium nitride transistor, C high Is the sum of the capacitance values of the high-voltage side capacitors, V in For the amplitude of the external voltage source, Q mismatch The total charge between the sum of the capacitance values of the corresponding low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors is obtained when the comparison results are unequal.
4. A method of calculating junction capacitance compensation for a multi-transistor parallel cascode power device as recited in claim 3, wherein: in step S3, when the comparison results are equal, the capacitance matching is directly performed, specifically as follows:
SA3.1: turning off the low-voltage silicon MOSFET, and charging the total capacitance of the low-voltage side by an external power supply until the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor is lower than the threshold voltage of the high-voltage depletion type gallium nitride transistor;
SA3.2: and switching off the channel of the high-voltage depletion type gallium nitride transistor, and charging a series circuit consisting of the low-voltage side total capacitance and the high-voltage side total capacitance by an external power supply until the voltage of the series circuit consisting of the low-voltage side total capacitance and the high-voltage side total capacitance is the same as the amplitude of an external voltage source.
5. The method for calculating junction capacitance compensation of a multi-transistor parallel cascode power device according to claim 4, wherein: in step S3, when the comparison result is unequal, the capacitance matching is performed according to the parallel compensation capacitance, specifically:
and the external power supply charges the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor through the diode, and the charged charge is the total charge between the sum of the capacitance values of the corresponding low-voltage side capacitance and the sum of the capacitance values of the high-voltage side capacitance when the comparison result is unequal, until the voltage of a series circuit formed by the low-voltage side total capacitance and the high-voltage side total capacitance is the same as the amplitude of the external voltage source.
6. The method for calculating junction capacitance compensation of the multi-transistor parallel cascode power device according to claim 5, wherein the method comprises the steps of: the external power supply charges the drain-source junction capacitance of the single high-voltage depletion type gallium nitride transistor through the diode, and the charging formula is specifically as follows:
Figure QLYQS_3
；
wherein: c (C) low Is the sum of the capacitance values of the low-voltage side capacitors, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN Threshold voltage of high-voltage depletion type gallium nitride transistor, C high Is the sum of the capacitance values of the high-voltage side capacitors, V 1_GaN Drain-source voltage, Q of high-voltage depletion type gallium nitride transistor in avalanche of low-voltage silicon MOSFET mismatch For the total charge between the sum of the capacitance values of the corresponding low-voltage side capacitors and the sum of the capacitance values of the high-voltage side capacitors when the comparison results are unequal, V in Is the external voltage source amplitude.
7. The method for calculating junction capacitance compensation of a multi-transistor parallel cascode power device according to claim 6, wherein: the calculation formula of the drain-source voltage of the high-voltage depletion type gallium nitride transistor in the avalanche process of the parallel compensation capacitor and the low-voltage silicon MOSFET is specifically as follows:
Figure QLYQS_4
；
wherein: c (C) comp To compensate the capacitance of the capacitor in parallel, V 1_GaN Drain-source voltage, C of high-voltage depletion type gallium nitride transistor in avalanche of low-voltage silicon MOSFET high Is the sum of the capacitance values of the high-voltage side capacitors, V in For the amplitude of the external voltage source, V ava Avalanche voltage value, V, of low-voltage silicon MOSFET th_GaN The threshold voltage of the high-voltage depletion type gallium nitride transistor is N, the number of the high-voltage depletion type gallium nitride transistors connected in parallel is C DS_GaN C is the drain-source junction capacitance of a single high-voltage depletion type gallium nitride transistor low Is the sum of the capacitance values of the low-voltage side capacitors, C oss_Si Output capacitance for low-voltage silicon MOSFET, C GS_GaN Is the high-voltage depletion type gallium nitride transistor gate-source junction capacitance.
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