CN106898604A - The gallium nitride device encapsulating structure of Cascode - Google Patents

The gallium nitride device encapsulating structure of Cascode Download PDF

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Publication number
CN106898604A
CN106898604A CN201710059793.8A CN201710059793A CN106898604A CN 106898604 A CN106898604 A CN 106898604A CN 201710059793 A CN201710059793 A CN 201710059793A CN 106898604 A CN106898604 A CN 106898604A
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China
Prior art keywords
source electrode
gan
silicon
gan device
cascode
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CN201710059793.8A
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Chinese (zh)
Inventor
陈磊
阮颖
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Shanghai University of Electric Power
University of Shanghai for Science and Technology
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Shanghai University of Electric Power
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Priority to CN201710059793.8A priority Critical patent/CN106898604A/en
Publication of CN106898604A publication Critical patent/CN106898604A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The present invention relates to a kind of gallium nitride device encapsulating structure of Cascode, silicon device and GaN device are vertically connected with to form Cascode structure, concrete structure is silicon device grid as cascade structure grid, silicon device source electrode is used as cascade structure source electrode, GaN device drain electrode drains as cascade structure, silicon device source electrode is connected with GaN device grid, GaN device source electrode is connected with silicon device drain electrode, GaN device grid is connected with silicon device source electrode, one end of capacitor is directly connected to silicon device source electrode, the other end is wired to GaN device source electrode, encapsulation arrangement silicon device is located at the top of GaN device, coupling part is connected by the pad in structure centre position.To reduce interconnection parasitic inductance.Total can effectively reduce stray inductance present in Cascode structure, it is to avoid GaN device occurs diverging oscillation phenomenon in the case of high current shut-off, can effectively extend the service life of GaN device.

Description

The gallium nitride device encapsulating structure of Cascode
Technical field
The present invention relates to a kind of electronic component structure, the gallium nitride device of more particularly to a kind of Cascode is encapsulated Structure.
Background technology
Gallium nitride (GaN) power device is a kind of emerging Power Electronic Technique.Compared to traditional silicon materials device, adopt Can be run with frequency higher and efficiency with the converter of this new material, it is considered to be a kind of new skill with bright prospects Art.
Cascode structure is widely used in the normally opened GaN device of high pressure.Found in practice, in high-voltage great-current situation Under, the GaN device of Cascode can produce diverging oscillation phenomenon due to the capacitance mismatch between silicon MOSFET and GaN.This Plant diverging oscillation to be triggered under certain amplitude by unwanted oscillation, the amplitude is determined by cut-off current, loop inductance and junction capacity.Hair Dissipating operation of the vibration to GaN device has strong negative effect, is likely to result in the damage of device.
The content of the invention
The present invention be directed to the problem of the diverging oscillation of the GaN device of Cascode, it is proposed that a kind of cascade The gallium nitride device encapsulating structure of cascade, it is to avoid diverging oscillation occurs in the gallium nitride device of Cascode.
The technical scheme is that：A kind of gallium nitride device encapsulating structure of Cascode, silicon device and GaN devices Part is vertically connected with to form Cascode structure, and concrete structure is silicon device grid as cascade structure grid, silicon device source Pole drains as cascade structure source electrode, GaN device drain electrode as cascade structure, and silicon device source electrode is connected with GaN device grid, GaN device source electrode is connected with silicon device drain electrode, and GaN device grid is connected with silicon device source electrode, and one end of capacitor is directly connected to To silicon device source electrode, the other end is wired to GaN device source electrode, and encapsulation arrangement silicon device is located at the top of GaN device, Coupling part is connected by the pad in structure centre position.
The capacitor CxCapacitance be more than Cmin, CminComputing formula it is as follows：
Wherein, Q is the quantity of electric charge that GaN device is directly dissipated in by opening to turn off process by raceway groove；VAIt is and GaN The avalanche voltage of the silicon device of device cascade；VTThe threshold voltage of source electrode and gate pole during for GaN device generation reverse turn off process.
The beneficial effects of the present invention are：The gallium nitride device encapsulating structure of Cascode of the present invention, can be effective Reduce stray inductance present in Cascode structure, it is to avoid GaN device occurs diverging oscillation in the case of high current shut-off Phenomenon, can effectively extend the service life of GaN device.
Brief description of the drawings
Fig. 1 is the circuit diagram of typical Cascode structure；
Fig. 2 is the gallium nitride device encapsulating structure schematic diagram of Cascode of the present invention；
Fig. 3 is the typical application schematic diagram of the gallium nitride device of Cascode of the present invention.
Specific embodiment
If Fig. 1 is a kind of circuit diagram of typical Cascode structure, including input 10, inductance 11, diode 12, GaN device 13, silicon device 14, electric capacity 15, load end 16.The circuit is a kind of allusion quotation of step-up DC/DC power conversion circuits Type circuit topology (Boost circuit), electric capacity therein 15 plays a part of to filter off voltage high frequency fluctuation, support DC voltage.Its Middle GaN device 13 and silicon device 14 form Cascode structure.
The present invention adds building-out condenser C in the GaN device encapsulation of Cascodex.Building-out condenser CxIn circuit Middle formation RC buffer circuits, to suppress the generation of due to voltage spikes and unwanted oscillation phenomenon.Building-out condenser CxSpecific features be：
(1) building-out condenser CxCapacitance should be greater than Cmin。CminComputing formula it is as follows：
Wherein, Q is the quantity of electric charge that GaN device is directly dissipated in by opening to turn off process by raceway groove；VAIt is and GaN The avalanche voltage of the silicon device of device cascade；VTThe threshold voltage of source electrode and gate pole during for GaN device generation reverse turn off process. The computational methods of these three parameters are that known in industry, will not be repeated here.
(2) building-out condenser CxOne end be directly connected to GaN device cascade silicon materials device source electrode, the other end It is wired to the source electrode of GaN device.
(3) the silicon materials device with GaN device cascade should be located at the top of GaN device, to reduce interconnection parasitic inductance.
The gallium nitride device encapsulating structure schematic diagram of Cascode as shown in Figure 2, is that one kind can avoid common source from being total to There is the packaged type of diverging oscillation, including grid 21, source electrode 22, silicon device source electrode 23, GaN device in the GaN device of grid cascade Source electrode 24, GaN device grid 25, drain electrode 26, building-out condenser 27.Fig. 2 is actually GaN device 13 and silicon device 14 in Fig. 1 The specific packing forms of the Cascode structure for being formed.In the packing forms, silicon device 14 is located at the upper of GaN device 13 Portion, coupling part is realized by the pad in structure centre position, to reduce stray inductance as far as possible.One end of building-out condenser 27 is straight Silicon device source electrode 23 is connected in succession, and the other end is wired to GaN device source electrode 24.The minimum value meter of building-out condenser 27 Calculation is carried out according to formula (1).The typical application schematic diagram of the gallium nitride device of correspondence Cascode as shown in Figure 3.

Claims (2)

1. the gallium nitride device encapsulating structure of a kind of Cascode, it is characterised in that silicon device and GaN device are vertically connected with Cascode structure is formed, concrete structure is silicon device grid as cascade structure grid (21), silicon device source electrode conduct Cascade structure source electrode (22), GaN device drain electrode drains (26) as cascade structure, and silicon device source electrode is connected with GaN device grid (23), GaN device source electrode is connected (24) with silicon device drain electrode, and GaN device grid is connected (25), capacitor with silicon device source electrode (27) one end is directly connected to silicon device source electrode (23), and the other end is wired to GaN device source electrode (24), encapsulation row Cloth silicon device is located at the top of GaN device, and coupling part is connected by the pad in structure centre position.
2. the gallium nitride device encapsulating structure of Cascode according to claim 1, it is characterised in that the capacitor (27)CxCapacitance be more than Cmin, CminComputing formula it is as follows：
C m i n = Q V A - V T
Wherein, Q is the quantity of electric charge that GaN device is directly dissipated in by opening to turn off process by raceway groove；VAIt is and GaN device The avalanche voltage of the silicon device of cascade；VTThe threshold voltage of source electrode and gate pole during for GaN device generation reverse turn off process.
CN201710059793.8A 2017-01-24 2017-01-24 The gallium nitride device encapsulating structure of Cascode Pending CN106898604A (en)

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Application Number Priority Date Filing Date Title
CN201710059793.8A CN106898604A (en) 2017-01-24 2017-01-24 The gallium nitride device encapsulating structure of Cascode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710059793.8A CN106898604A (en) 2017-01-24 2017-01-24 The gallium nitride device encapsulating structure of Cascode

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110491933A (en) * 2019-08-26 2019-11-22 黄山学院 The low highly reliable enhanced GaN HEMT device of cascade of parasitic inductance
CN111430347A (en) * 2020-06-11 2020-07-17 嘉兴景焱智能装备技术有限公司 Gallium nitride gate cascade unit and integrated semiconductor structure thereof
CN111916450A (en) * 2020-09-08 2020-11-10 苏州英嘉通半导体有限公司 Cascade circuit and cascade device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103493374A (en) * 2011-04-13 2014-01-01 Pi公司 Cascode switches including normally-off and normally-on devices and circuits comprising the switches
US20140110787A1 (en) * 2012-10-22 2014-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Layout Schemes for Cascade MOS Transistors
CN103840821A (en) * 2012-11-23 2014-06-04 Nxp股份有限公司 Cascoded semiconductor devices
CN103872006A (en) * 2012-12-17 2014-06-18 Nxp股份有限公司 Cascode circuit
US20150022266A1 (en) * 2013-07-17 2015-01-22 Qualcomm Incorporated Folded cascode amplifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103493374A (en) * 2011-04-13 2014-01-01 Pi公司 Cascode switches including normally-off and normally-on devices and circuits comprising the switches
US20140110787A1 (en) * 2012-10-22 2014-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Layout Schemes for Cascade MOS Transistors
CN103840821A (en) * 2012-11-23 2014-06-04 Nxp股份有限公司 Cascoded semiconductor devices
CN103872006A (en) * 2012-12-17 2014-06-18 Nxp股份有限公司 Cascode circuit
US20150022266A1 (en) * 2013-07-17 2015-01-22 Qualcomm Incorporated Folded cascode amplifier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110491933A (en) * 2019-08-26 2019-11-22 黄山学院 The low highly reliable enhanced GaN HEMT device of cascade of parasitic inductance
CN110491933B (en) * 2019-08-26 2023-04-11 黄山学院 Low parasitic inductance and high reliability cascade enhancement type GaN HEMT device
CN111430347A (en) * 2020-06-11 2020-07-17 嘉兴景焱智能装备技术有限公司 Gallium nitride gate cascade unit and integrated semiconductor structure thereof
CN111430347B (en) * 2020-06-11 2020-09-04 嘉兴景焱智能装备技术有限公司 Gallium nitride gate cascade unit and integrated semiconductor structure thereof
CN111916450A (en) * 2020-09-08 2020-11-10 苏州英嘉通半导体有限公司 Cascade circuit and cascade device

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