CN112332216A - Method for manufacturing vertical cavity surface emitting laser with pre-ion implantation - Google Patents
Method for manufacturing vertical cavity surface emitting laser with pre-ion implantation Download PDFInfo
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- CN112332216A CN112332216A CN202011362089.8A CN202011362089A CN112332216A CN 112332216 A CN112332216 A CN 112332216A CN 202011362089 A CN202011362089 A CN 202011362089A CN 112332216 A CN112332216 A CN 112332216A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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Abstract
The invention provides a method for manufacturing a Vertical Cavity Surface Emitting Laser (VCSEL) with pre-ion implantation, which at least comprises a substrate, a first reflector layer, an active region and a second reflector layer, and the method comprises the following steps: implanting ions into the first mirror layer according to the ion implantation region previously designated in the first mirror layer; continuing to perform secondary epitaxial growth on the first mirror layer after ion implantation, thereby generating the VCSEL; or, implanting ions into a pre-generated part of the VCSEL according to the ion implantation region marked in the first reflecting mirror layer in advance; after ion implantation, secondary epitaxial growth is continued on the portion of the produced vertical cavity surface emitting laser, thereby the vertical cavity surface emitting laser.
Description
Technical Field
The invention relates to the field of semiconductor chips, in particular to a method for manufacturing a vertical cavity surface emitting laser by pre-ion implantation.
Background
In the process of manufacturing a Vertical-Cavity Surface-Emitting Laser (VCSEL, also called Vertical-Cavity Surface-Emitting Laser), there are three main defining modes of the VCSEL optical window, which are air column, ion implantation, and oxide aperture, respectively. The epitaxial structure of the VCSEL is grown at one time, and the bottom Distributed Bragg Reflector (DBR) is grown under the bottom DBR, so the reflectivity spectrum uniformity of the bottom DBR cannot be determined in mass production, and the VCSEL manufactured has poor effect. In addition, the optical window structure of the high power VCSEL is usually formed by the oxide aperture method, but the geometry of the oxide aperture is greatly affected by the epitaxial process, and the process time for using the optical window aperture is long and the control of the optical window aperture is difficult.
A pixel structure of a vertical cavity surface emitting laser and a method for manufacturing the same are disclosed in patent document (CN 108923261A), where the vertical cavity surface emitting laser has an emission window, the pixel structure includes a plurality of bright area sub-pixels with light emission and a plurality of dark area sub-pixels without light emission, which are formed in the emission window, and the bright area sub-pixels and the dark area sub-pixels are arranged in the emission window to form a pattern. Compared with the existing structured light module scheme and the existing coded structured light module scheme, the invention can effectively reduce the energy consumption and the manufacturing cost of the structured light and coded structured light integral optical module under the condition of maintaining certain information density, or achieve higher information density and identifiability under the same cost and energy consumption. The invention has wide application prospect in the field of manufacturing and application of the vertical cavity surface emitting laser.
In the prior literature: the Ion Implantation method forms a current limiting Aperture and the influence of the current limiting Aperture on the photoelectric Characteristics of a Device, namely 'electric Formed Aperture Formed by Ion Implantation and Its effects on Device Optoelectronic Characteristics', and particularly discloses that the current limiting Aperture of a 1.3 mu m surface emitting Electroluminescent (EL) Device structure is manufactured by adopting the Ion Implantation method and a subsequent annealing process, the optimized parameters of Ion Implantation and annealing temperature are obtained by testing and analyzing the electric and optical Characteristics of the structure, and the process parameters are 5 multiplied by 1014cm < -2 > of Ion Implantation dosage and annealing temperature of 450 ℃ for 1 min. The results show that as the current limiting aperture is reduced, the resistance of the device increases linearly; the formation of the current limiting aperture significantly enhanced the electroluminescence intensity of the 1.3 μm surface emitting device structure, the 15 μm aperture sample was 4 times (injected current 3mA) as the sample without limiting aperture, and a physical explanation was made as to the effect of the current limiting aperture on the electroluminescence of the EL device structure.
Although the above documents all disclose methods of ion implantation, none of them relate to a method of preliminarily defining an ion implantation region in a VCSEL so as to subsequently implant ions into the VCSEL according to the ion implantation region, thereby preliminarily knowing a reflectance distribution and the like of the VCSEL, contributing to uniformity of control in an oxidation process, reducing a poor uniformity of a reflectance of the VCSEL, and avoiding waste of subsequent processes.
Disclosure of Invention
In order to at least solve the technical problems that the reflectivity distribution of the vertical cavity surface emitting laser cannot be known in advance, the uniformity control cannot be carried out on the oxidation process in the generation process, the poor uniformity of the reflectivity of the vertical cavity surface emitting laser cannot be reduced, the waste of the subsequent process is caused, and the like, the following schemes are provided.
Specifically, according to a first aspect of the present invention, there is provided a method for fabricating a pre-ion implanted vcsel, the vcsel including at least a substrate, a first mirror layer, an active region, and a second mirror layer, the method comprising:
implanting ions into the first mirror layer according to the ion implantation region previously designated in the first mirror layer;
continuing to perform secondary epitaxial growth on the first mirror layer after ion implantation, thereby generating the VCSEL;
or the like, or, alternatively,
implanting ions into a pre-formed VCSEL according to the ion implantation region previously designated in the first mirror layer;
and after ion implantation, continuing to perform secondary epitaxial growth on the generated vertical cavity surface emitting laser so as to generate the complete vertical cavity surface emitting laser.
In this embodiment, since the ion implantation region is calibrated in the first mirror layer in advance, ions are implanted into the first mirror layer according to the ion implantation region, so that the reflectance distribution of the first mirror layer can be known in advance, and whether to continue the secondary epitaxial growth is determined according to the reflectance distribution of the first mirror layer, so that the oxidation process can be controlled in a consistency manner in the generation process, thereby reducing the poor uniformity of the reflectance of the first mirror layer, and avoiding waste of the subsequent process.
In one embodiment, the performing the second epitaxial growth on the first mirror layer after the ion implantation to generate the vcsel includes:
continuing to perform secondary epitaxial growth on the first reflector layer after ion implantation; generating an active area;
and implanting ions into the active region from the upper surface of the active region according to the ion implantation region, and continuing to perform secondary epitaxial growth on the active region after ion implantation, thereby generating the VCSEL.
In this embodiment, since the first mirror layer and the active region are ion-implanted, the reflectance distribution of the first mirror layer and/or the MQW wavelength distribution of the active region can be known in advance, so that the oxidation process can be controlled in a consistent manner during the generation process, the uniformity of the reflectance of the first mirror layer is reduced, and the waste of the subsequent process is avoided.
In one embodiment, the performing the second epitaxial growth on the first mirror layer after the ion implantation to generate the vcsel includes:
and after ion implantation, continuing to perform secondary epitaxial growth above the first reflector layer to sequentially generate an active region and a second reflector layer, thereby generating the vertical cavity surface emitting laser.
In one embodiment, the performing the second epitaxial growth on the first mirror layer after the ion implantation to generate the vcsel includes:
continuing to perform secondary epitaxial growth on the first reflector layer after ion implantation; sequentially generating the active region and part of the second reflector layer;
implanting ions into the active region and a portion of the second reflector layer from an upper surface of the portion of the second reflector layer according to the ion implantation region;
after ion implantation, second epitaxial growth is continued over the generated portion of the second reflector layer to generate a complete second reflector layer, thereby generating the VCSEL.
In this embodiment, an ion implantation region is previously defined on the upper surface of the first reflector layer, and ions are implanted into the upper surfaces of the first reflector layer, the active region and a portion of the second reflector layer according to the ion implantation region. After ion implantation, secondary epitaxial growth is continued, thereby producing the vertical cavity surface emitting laser. By means of pre-ion implantation, for example, ion implantation is performed on the upper surface of the first mirror layer, the reflectivity distribution of the first mirror layer can be known, and since only the first mirror layer needs to be ion implanted, ion implantation can be performed with lower ion implantation energy, thereby reducing unnecessary damage to the epitaxial layer of the secondary growth, such as the active region, the second mirror layer, and the like, and since ions are implanted only to a shallower depth of the first mirror layer, the aperture range of the optical window of the VCSEL can be accurately controlled.
In addition, ions are implanted from the upper surface of the active region to the active region until penetrating the active region according to an ion implantation region previously defined on the upper surface of the first mirror layer. After ion implantation, a second epitaxial growth is performed on the active region to form a second reflector layer. Therefore, the wavelength distribution of the active region (MQW) can be directly measured without the blockage of the second reflector layer above the active region, and the yield of the active region can be known, so as to determine whether to continue to grow the second reflector layer.
Then, after the active region implantation, the ion implantation is continued into the generated portion of the second reflector layer from the upper surface of the generated portion of the second reflector layer according to the ion implantation region previously defined on the upper surface of the first reflector layer. Alternatively, ions are implanted into the generated portions of the second mirror layer, the active region and the first mirror layer from the upper surface of the generated portions of the second mirror layer according to an ion implantation region previously designated on the upper surface of the first mirror layer. After ion implantation, the second mirror layer is grown on the part of the second mirror layer to form a complete second mirror layer and other layers. In this way, the reflectivity distribution of the first mirror layer and the MQW wavelength distribution of the active region can be known in advance, which is helpful for subsequent determination of whether to continue the secondary epitaxial process or to perform production classification.
The geometry of the optical window of the VCSEL can be precisely defined in advance by the above-mentioned fabrication method, and an oxidation process can be optionally used as an auxiliary for aperture control. In addition, the composition and the structural distribution of the first reflector layer are known, so that the uniformity of management and control in the oxidation process is facilitated, the poor uniformity of the reflectivity of the first reflector layer is reduced, the waste of the subsequent process is avoided, and the efficiency of the manufacturing process is improved.
In any of the above aspects, preferably, between the step of forming the substrate and the first mirror layer, the manufacturing method further includes: a first conductive layer is generated.
In any of the above aspects, preferably, the manufacturing method further includes: a second conductive layer is generated over the second mirror layer.
In any of the above aspects, the polarity of the implanted ions is preferably opposite to the polarity of the first conductive layer disposed between the substrate and the first mirror layer.
Drawings
Non-limiting and non-exhaustive embodiments of the present invention are described, by way of example, with reference to the following drawings, in which:
FIG. 1 illustrates a schematic diagram of a process for implanting ions into a first mirror layer according to one embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a process of ion implantation according to another embodiment of the present disclosure;
fig. 3 is a schematic diagram illustrating a manufacturing process of ion implantation according to another embodiment of the invention.
Detailed Description
In order to make the above and other features and advantages of the present invention more apparent, the present invention is further described below with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not to be construed as limiting, for those of ordinary skill in the art.
As shown in fig. 1 to 3, the vertical cavity surface emitting laser 100 includes a multilayer structure including at least: the VCSEL device includes a substrate 10, a first mirror layer 20 disposed above the substrate 10, an active region 30 disposed above the first mirror layer 20, and a second mirror layer 40 disposed above the active region 30, wherein the VCSEL device further includes: an ion implantation region 21 (shown as a black circle in fig. 1). The specific manufacturing process can be as follows: forming a portion of the vcsel 100 in the ion implantation region 21 designated in the first mirror layer 20 in advance, and implanting ions into the portion of the vcsel 100 according to the ion implantation region 21 designated in advance; and continuing to perform a second epitaxial growth on the resulting VCSEL after ion implantation to produce the VCSEL 100. Alternatively, the present invention may also implant ions into the first mirror layer 20 according to the ion implantation region 21 pre-designated in the first mirror layer 20; after ion implantation, secondary epitaxial growth is continued on the first mirror layer 20, thereby producing the vertical cavity surface emitting laser.
In this embodiment, since the ion implantation region is calibrated in the first mirror layer in advance, ions are implanted into the first mirror layer according to the ion implantation region, so that the reflectance distribution of the first mirror layer can be known in advance, and whether to continue the secondary epitaxial growth is determined according to the reflectance distribution of the first mirror layer, so that the oxidation process can be controlled in a consistency manner in the generation process, thereby reducing the poor uniformity of the reflectance of the first mirror layer, and avoiding waste of the subsequent process.
In one embodiment, the performing the second epitaxial growth on the first mirror layer 20 after the ion implantation to form the vcsel includes:
continuing to perform a second epitaxial growth on the first mirror layer 20 after ion implantation; generating an active region 30;
implanting ions into the active region 30 from the upper surface of the active region 30 according to the ion implantation region 21, and continuing to perform secondary epitaxial growth on the active region 30 after the ion implantation, thereby producing the VCSEL.
In this embodiment, since the first mirror layer and the active region are ion-implanted, the reflectance distribution of the first mirror layer and/or the MQW wavelength distribution of the active region can be known in advance, so that the oxidation process can be controlled in a consistent manner during the generation process, the uniformity of the reflectance of the first mirror layer is reduced, and the waste of the subsequent process is avoided.
In one embodiment, the performing the second epitaxial growth on the first mirror layer 20 after the ion implantation to form the vcsel includes:
continuing to perform a second epitaxial growth on the first mirror layer 20 after ion implantation; sequentially generating the active region 30 and a portion of the second reflector layer 40;
implanting ions into the active region 30 and a portion of the second reflector layer 40 from the upper surface of the portion of the second reflector layer 40 according to the ion implantation region 21;
after the ion implantation, the second epitaxial growth is continued over the generated portion of the second mirror layer 40 to generate the complete second mirror layer 40, thereby generating the vcsel.
In this embodiment, an ion implantation region is previously defined on the upper surface of the first reflector layer, and ions are implanted into the upper surfaces of the first reflector layer, the active region and a portion of the second reflector layer according to the ion implantation region. After ion implantation, secondary epitaxial growth is continued, thereby producing the vertical cavity surface emitting laser. By means of pre-ion implantation, for example, ion implantation is performed on the upper surface of the first mirror layer, the reflectivity distribution of the first mirror layer can be known, and since only the first mirror layer needs to be ion implanted, ion implantation can be performed with lower ion implantation energy, thereby reducing unnecessary damage to the epitaxial layer of the secondary growth, such as the active region, the second mirror layer, and the like, and since ions are implanted only to a shallower depth of the first mirror layer, the aperture range of the optical window of the VCSEL can be accurately controlled.
In addition, ions are implanted from the upper surface of the active region to the active region until penetrating the active region according to an ion implantation region previously defined on the upper surface of the first mirror layer. After ion implantation, a second epitaxial growth is performed on the active region to form a second reflector layer. Therefore, the wavelength distribution of the active region (MQW) can be directly measured without the blockage of the second reflector layer above the active region, and the yield of the active region can be known, so as to determine whether to continue to grow the second reflector layer.
Then, after the active region implantation, the ion implantation is continued into the generated portion of the second reflector layer from the upper surface of the generated portion of the second reflector layer according to the ion implantation region previously defined on the upper surface of the first reflector layer. Alternatively, ions are implanted into the generated portions of the second mirror layer, the active region and the first mirror layer from the upper surface of the generated portions of the second mirror layer according to an ion implantation region previously designated on the upper surface of the first mirror layer. After ion implantation, the second mirror layer is grown on the part of the second mirror layer to form a complete second mirror layer and other layers. In this way, the reflectivity distribution of the first mirror layer and the MQW wavelength distribution of the active region can be known in advance, which is helpful for subsequent determination of whether to continue the secondary epitaxial process or to perform production classification.
The geometry of the optical window of the VCSEL can be precisely defined in advance by the above-mentioned fabrication method, and an oxidation process can be optionally used as an auxiliary for aperture control. In addition, the composition and the structural distribution of the first reflector layer are known, so that the uniformity of management and control in the oxidation process is facilitated, the poor uniformity of the reflectivity of the first reflector layer is reduced, the waste of the subsequent process is avoided, and the efficiency of the manufacturing process is improved.
FIG. 1 is a schematic diagram illustrating a process for implanting ions into a first mirror layer according to another embodiment of the present invention.
In one embodiment, as shown in fig. 1, ions are implanted into the first mirror layer 20 according to the ion implantation region 21 previously defined in the first mirror layer 20; after ion implantation, the second epitaxial growth is continued on the first mirror layer 20, so as to produce the vcsel as follows:
a step (a) of taking out after the first mirror layer 20 is epitaxially grown;
a step (b) of pre-defining an ion implantation region 21 on the upper surface of the first mirror layer 20, and implanting ions into a portion of the first mirror layer 20 (generally, the implantation depth is shallow) according to the defined ion implantation region 21;
and (c) continuing to perform a secondary epitaxy process by using a Metal-organic Chemical Vapor Deposition (MOCVD) system, and sequentially generating an active region 30, a second reflector layer 40, a second conductive layer 60 and the like on the upper surface of the first reflector layer to complete the whole epitaxy structure. Meanwhile, a first conductive layer 50 is also formed between the substrate 10 and the first mirror layer 20. The reflectivity distribution of the first mirror layer can be known through the manufacturing method, meanwhile, since only the first mirror layer needs to be implanted, the ion implantation can be carried out by using lower ion implantation energy, so that unnecessary damage to secondary growth epitaxial layers such as an active region, a second mirror layer and the like is reduced, and the ion implantation is only carried out to a shallow depth of the first mirror layer, so that the aperture range of an optical window of the VCSEL can be accurately controlled.
Fig. 2 is a schematic diagram illustrating a manufacturing process of ion implantation according to another embodiment of the present invention.
In one embodiment, as shown in fig. 2, after ion implantation, the second epitaxial growth is continued on the first mirror layer 20, so as to form the vcsel as follows:
step (a), after ion implantation, continuing to perform secondary epitaxial growth on the first mirror layer 20; generating an active region 30, and taking out after the active region 30 is generated;
step (B) of performing ion implantation from the upper surface of the active region 30 according to the ion implantation region 21 pre-determined in the first mirror layer 20, and implanting the ion implantation into the first mirror layer 20 through the active region 30;
and (C) continuing to perform a second epitaxy process by using a Metal-organic Chemical Vapor Deposition (MOCVD) system, sequentially forming a second mirror layer 40, a second conductive layer 60 and the like on the upper surface of the active region 30 to complete an entire epitaxy structure, and simultaneously forming a first conductive layer 50 between the substrate 10 and the first mirror layer 20. The depth of the ion implantation is determined to penetrate the active region 30. By such a manufacturing method, since there is no blocking of the second mirror layer above the active region, the wavelength distribution of the active region (MQW) can be directly measured, the spectral distribution of the MQW can be known, the yield of the active region can be known, and it can be determined whether to continue to grow the second mirror layer 40. And taking out the substrate after the MQW epitaxy is finished, carrying out ion implantation, and then returning to the MOCVD to carry out a secondary epitaxy process to finish the whole epitaxy structure. The depth of ion implantation is based on penetration of the MQW.
Fig. 3 is a schematic diagram illustrating a manufacturing process of ion implantation according to another embodiment of the invention.
In one embodiment, as shown in fig. 3, after ion implantation, the second epitaxial growth is continued on the first mirror layer 20, so as to form the vcsel as follows:
step (I), after ion implantation, continuing to perform secondary epitaxial growth on the first mirror layer 20; sequentially generating the active region 30 and a portion of the second reflector layer 40; taking out after epitaxy of the part of the second reflector layer 40;
step (II) of implanting ions into the active region 30 and a portion of the second reflector layer 40 from the upper surface of the portion of the second reflector layer 40 according to the ion implantation region 21;
and (III) continuing to perform a second epitaxy process by using a Metal-organic Chemical Vapor Deposition (MOCVD) system, forming a remaining second reflector layer 40 and a second conductive layer 60 on the upper surface of the second reflector layer 40 to complete an entire epitaxy structure, and forming a first conductive layer 50 between the substrate 10 and the first reflector layer 20. The ion implantation depth is determined by penetrating the active region 30, and the reflectivity distribution of the first mirror layer and the MQW wavelength distribution of the active region can be known in advance through the manufacturing method, so that whether a secondary epitaxy process or production classification is performed or not can be determined in the follow-up process, the secondary epitaxy of follow-up correction is performed, and the yield is improved. And taking out the second reflecting layer after the epitaxy of part of the second reflecting layer is finished, carrying out ion implantation, and then returning to the MOCVD to carry out a secondary epitaxy process to finish the whole epitaxy structure. The depth of the ion implantation may be adjusted according to device characteristic requirements.
It should be understood that, herein, the first mirror layer 20 is grown on the substrate 10, the first mirror layer 20 may be an N-type lower multilayer mirror 20, the second mirror layer 40 is a P-type upper multilayer mirror, and the active region 30 includes a multiple quantum well active layer, wherein the N-type lower multilayer mirror is disposed on the GaAs substrate 10, the multiple quantum well active layer is disposed on the N-type lower multilayer mirror, and the P-type upper multilayer mirror is disposed on the multiple quantum well active layer.
In addition, the P-type upper multilayer mirror 40 and the N-type lower multilayer mirror 20 may be alternately grown using GaAs and AlGaAs materials or AlAsSb and GaSb materials or GaN and INGaN materials or INP and INAlP/INGaAsP materials. The P-type upper multilayer mirror 40 herein may be formed using thin films alternately grown by Metal Organic Chemical Vapor Deposition (MOCVD) or vacuum electron beam evaporation coater, and the P-type upper multilayer mirror 40 may be formed by alternately stacking a plurality of periods of, for example, al0.9ga0.1as layers and al0.12ga0.88as layers, each of which has a thickness of 1/4 of the wavelength in the medium, as in the case of the N-type lower multilayer mirror 20. For example, formed below the DBR 40 is a P-type AlxGa1-xAs layer (oxidation control layer, x > 0.9), and formed on the DBR 40 is a P-type GaAs contact layer having a higher carrier concentration, and these layers form part of the mirror. The DBR mirror includes layers with alternating high and low refractive indices. Each pair typically has a thickness of one-half the laser wavelength in the material, which results in an intensity reflectivity of 99% or more.
It is also understood that the predetermined depth may be two or three pairs of the depth implanted into the first mirror layer 20, one pair being a layer of GaAs plus a layer of AlGaAs and including combinations of compositionally graded layers thereof or combinations of other materials.
In this embodiment, an ion implantation region is formed within the VCSEL, and ions are subsequently implanted into the first mirror layer according to the ion implantation region. In this way, the geometry of the optical window of the VCSEL can be precisely defined in advance. In addition, the uniformity of control can be improved in the oxidation process, poor uniformity of the lower layer is reduced, waste in the subsequent process is avoided, and the efficiency of the manufacturing process is improved. The ion implantation region is a region which is difficult to conduct electricity, i.e. the formed ion layer has the effect of limiting current.
In addition, in one embodiment, one of the first mirror layer 20 and the second mirror layer 40 is a P-type dbr layer, and the other is an N-type dbr layer.
Wherein, ions in the P-type distributed Bragg reflector layer adopt hydrogen ion implantation, and one or more of Cr, Ti and Fe can replace the hydrogen ions in the P-type layer.
Ions in the N-type distributed Bragg reflector layer are implanted by hydrogen ions, and one or more of Si, Ge, S, Se and Te can replace the hydrogen ions of the N-type layer. Of course, these are just some examples, and others may be included according to actual needs.
In one embodiment, the polarity of the implanted ions is opposite to the polarity of the first conductive layer 50 disposed between the substrate 10 and the first mirror layer 20.
A more specific embodiment of the method for manufacturing a vertical cavity surface emitting laser according to the present invention is not described herein again.
It will be understood by those skilled in the art that all or part of the steps in the method according to the above embodiments of the present invention may be indicated by the relevant hardware to be completed by a computer program, which may be stored in a non-volatile computer-readable storage medium, and which, when executed, may implement the steps of the above embodiments of the method. Any reference to memory, storage, database, or other medium used in the embodiments provided herein can include non-volatile and/or volatile memory, among others. Non-volatile memory can include read-only memory (ROM), Programmable ROM (PROM), Electrically Programmable ROM (EPROM), Electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory.
The features of the above embodiments may be arbitrarily combined, and for the sake of brevity, all possible combinations of the features in the above embodiments are not described, but should be construed as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the features.
While the invention has been described in connection with the embodiments, it is to be understood by those skilled in the art that the foregoing description and drawings are merely illustrative and not restrictive of the broad invention, and that this invention not be limited to the disclosed embodiments. Various modifications and variations are possible without departing from the spirit of the invention.
Claims (7)
1. A method of fabricating a pre-ion implanted vcsel comprising at least a substrate (10), a first mirror layer (20), an active region (30), and a second mirror layer (40), the method comprising:
-implanting ions into said first mirror layer (20) according to said ion implantation region (21) previously identified in said first mirror layer (20);
continuing a second epitaxial growth on the first mirror layer (20) after ion implantation, thereby producing the VCSEL;
or the like, or, alternatively,
implanting ions into a pre-generated portion of the VCSEL according to the ion implantation region (21) previously designated in the first mirror layer (20);
after ion implantation, secondary epitaxial growth is continued on the portion of the produced vertical cavity surface emitting laser, thereby the vertical cavity surface emitting laser.
2. The method of claim 1, wherein said continuing the second epitaxial growth on the first mirror layer (20) after the ion implantation to produce the VCSEL comprises:
continuing to perform a second epitaxial growth on the first mirror layer (20) after ion implantation; generating an active region (30);
implanting ions into the active region (30) from an upper surface of the active region (30) according to the ion implantation region (21), and continuing to perform secondary epitaxial growth on the active region (30) after ion implantation, thereby producing the VCSEL.
3. The method of claim 1, wherein said continuing the second epitaxial growth on the first mirror layer (20) after the ion implantation to produce the VCSEL comprises:
and after ion implantation, continuing to perform secondary epitaxial growth above the first reflector layer (20) to sequentially generate an active region (30) and a second reflector layer (40), thereby generating the vertical cavity surface emitting laser.
4. The method of claim 1, wherein said continuing the second epitaxial growth on the first mirror layer (20) after the ion implantation to produce the VCSEL comprises:
continuing to perform a second epitaxial growth on the first mirror layer (20) after ion implantation; -sequentially creating said active region (30) and a portion of the second mirror layer (40);
-implanting ions from the upper surface of said portion of the second mirror layer (40) into said active region (30) and into a portion of the second mirror layer (40) according to said ion implantation region (21);
after ion implantation, secondary epitaxial growth is continued over the generated portion of the second mirror layer (40) to generate a complete second mirror layer (40), thereby generating the VCSEL.
5. The fabrication method according to any one of claims 1 to 4, further comprising, between the generation of the substrate (10) and the first mirror layer (20):
a first conductive layer (50) is created.
6. The method of manufacturing according to any one of claims 1-4, further comprising:
a second conductive layer (60) is generated over the second mirror layer (40).
7. A method according to any of claims 1-4, characterized in that the polarity of the implanted ions is opposite to the polarity of the first conductive layer (50) arranged between the substrate (10) and the first mirror layer (20).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113013728A (en) * | 2021-02-26 | 2021-06-22 | 武汉仟目激光有限公司 | Vertical cavity surface emitting laser and ion implantation method |
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| US20030022406A1 (en) * | 2001-07-24 | 2003-01-30 | Liao Andrew Shuh-Huei | Method for making a vertical-cavity surface emitting laser with improved current confinement |
| CN1650489A (en) * | 2002-04-01 | 2005-08-03 | 路美光电公司 | Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser |
| CN101454954A (en) * | 2006-03-07 | 2009-06-10 | 玛丽·K·勃伦纳 | Red light laser |
| CN108923261A (en) * | 2018-10-24 | 2018-11-30 | 常州纵慧芯光半导体科技有限公司 | Dot structure of vertical cavity surface emitting laser and preparation method thereof |
| CN111446620A (en) * | 2020-06-17 | 2020-07-24 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser based on ion implantation, array and manufacturing method |
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| US20020006144A1 (en) * | 1997-10-07 | 2002-01-17 | Yasuhiro Kobayashi | Surface emitting semiconductor laser and method of fabricating the same |
| US20030022406A1 (en) * | 2001-07-24 | 2003-01-30 | Liao Andrew Shuh-Huei | Method for making a vertical-cavity surface emitting laser with improved current confinement |
| CN1650489A (en) * | 2002-04-01 | 2005-08-03 | 路美光电公司 | Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser |
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