CN112323084A - Preparation method of nano indium oxide - Google Patents
Preparation method of nano indium oxide Download PDFInfo
- Publication number
- CN112323084A CN112323084A CN202010967348.3A CN202010967348A CN112323084A CN 112323084 A CN112323084 A CN 112323084A CN 202010967348 A CN202010967348 A CN 202010967348A CN 112323084 A CN112323084 A CN 112323084A
- Authority
- CN
- China
- Prior art keywords
- indium oxide
- nano indium
- electrolysis
- electrolyte
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
The invention discloses a preparation method of nano indium oxide, which comprises the following steps: and finally, carrying out solid-liquid separation and high-temperature calcination on the indium hydroxide in the electrolyte to obtain the nano indium oxide powder. According to the preparation method of the nano indium oxide, the solution after electrolysis is heated, neutralized, stirred, subjected to solid-liquid separation and calcined to obtain the nano indium oxide with good stability, uniform particle size and uniform particle distribution, and the technical problems that nano indium oxide powder prepared by the prior art is unstable in powder property due to excessively fine particle size, and then is uneven in particle distribution and easy to agglomerate are solved.
Description
Technical Field
The invention relates to the technical field of material preparation, in particular to a preparation method of nano indium oxide.
Background
Indium oxide (In)2O3) Belonging to the group of elongated products of indium, indium hydroxide being indium oxide or indium oxide-containingThe precursor of the compound powder is used for manufacturing an ITO target for sputtering for forming an ITO film (a composite oxide containing indium-tin as a main component), which is a transparent electrode film widely used in display devices such as solar cells and liquid crystal displays. With the rapid development of global digital technology, the current photoelectric equipment gradually develops towards personalization, ultra-large-scale and irregular-shape display, the demand of transparent conductive films such as sputtering target materials and the like is remarkably increased, and the demand of indium oxide as a main raw material for forming the transparent conductive films is also remarkably increased.
The prior art methods for preparing indium oxide include chemical vapor deposition, sol-gel, hydrothermal solvothermal, thermal decomposition, template, microemulsion and the like, and with the intensive research on indium oxide semiconductors and the continuous update and demand of people on the performances of indium oxide semiconductors, a plurality of novel preparation methods are developed, such as electrostatic spinning, plasma synthesis, spray drying and the like. The prior art for preparing indium oxide has the defects of more synthesis process steps, more process parameters, difficulty in control, high requirements on equipment and the like, so that the production period is long. For example, the chemical vapor deposition needs to be performed in a high-temperature high-pressure or vacuum state, so that the requirement on equipment is high, the yield is low, and the industrial production is difficult to realize; the hydrothermal solvothermal method needs to be carried out at high temperature and high pressure, the high temperature and high pressure and part of substances easy to corrode can cause certain abrasion to a lining layer of a reaction kettle, and meanwhile, the growth temperature of the hydrothermal synthesis method has certain limitation.
The method for preparing indium oxide in the prior art also adopts an electrolytic method, and although the electrolytic method can be used for preparing nano-scale indium oxide powder, the prepared nano-scale indium oxide powder has the defects of nonuniform particle distribution, easy agglomeration and the like due to the over-fine particle size and unstable property of the over-fine powder, and can not meet the industrial requirements.
Aiming at the defects of the method for preparing indium oxide in the prior art, the invention provides a method for preparing nano indium oxide by electrolysis.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a preparation method of nano indium oxide.
In order to achieve the purpose, the invention adopts the following technical scheme.
The invention provides a preparation method of nano indium oxide, which comprises the following steps: and finally, carrying out solid-liquid separation and calcination on the indium hydroxide in the electrolyte to obtain the nano indium oxide.
As a further improvement of the invention, in the process of continuously adding the ammonia water solution into the electrolyzed solution and stirring, the pH value of the electrolyte is measured every 10min, so that the pH value of the electrolyte is controlled to be 7-7.5.
As a further improvement of the invention, the solute mass fraction of the ammonia water solution is 10-35%.
As a further improvement of the invention, the preset temperature is 60-80 ℃.
As a further improvement of the invention, the second preset time is 1-2 h.
As a further improvement of the invention, the first preset time is 12-24 h.
As a further improvement of the invention, the stirring speed in the stirring process is 30-70 r/min.
As a further improvement of the invention, the aqueous ammonium salt solution is an aqueous ammonium sulfate solution or an aqueous ammonium nitrate solution.
As a further improvement of the invention, in the electrolysis process, the current density of electrolysis is 500-2000A/m2The temperature of electrolysis is kept between 25 ℃ and 50 ℃, and the pH value of the electrolyte is controlled between 3 and 4.
As a further improvement of the invention, in the calcining process, the calcining temperature is 700-1200 ℃, and the calcining time is 14-26 h.
According to the preparation method of the nano indium oxide, the solution after electrolysis is heated, neutralized, stirred, subjected to solid-liquid separation and calcined to obtain the nano indium oxide with good stability, uniform particle size and uniform particle distribution, and the technical problems that nano indium oxide powder prepared by the prior art is unstable in powder property due to excessively fine particle size, and then is uneven in particle distribution and easy to agglomerate are solved.
Drawings
FIG. 1 is a scanning electron microscope image of indium oxide powder prepared in example 1 of the present invention.
FIG. 2 is a graph of the particle size distribution and BET data of the indium oxide powder prepared in example 1 of the present invention.
FIG. 3 is a scanning electron microscope image of indium oxide powder prepared in example 2 of the present invention.
FIG. 4 is a graph of the particle size distribution and BET data of the indium oxide powder prepared in example 2 of the present invention.
FIG. 5 is a scanning electron microscope image of indium oxide powder prepared in example 3 of the present invention.
FIG. 6 is a graph of the particle size distribution and BET data of indium oxide powder prepared in example 3 of the present invention.
Detailed Description
The technical solutions will be described clearly and completely in the following with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a preparation method of nano indium oxide, which comprises the following steps:
and electrolyzing by taking the metal indium as an anode, an inert electrode as a cathode and an ammonium salt aqueous solution as an electrolyte. Wherein the electrode distance between the anode and the cathode is 30-200 mm, and when the electrode distance is more than 200mm, the resistance between the anode and the cathode is increased, and the power consumption is increased; when the electrode pitch is less than 30mm, contact or short circuit between electrodes is likely to occur.
The inert electrode is one of a titanium plate, a graphite plate, a platinum plate and a gold-plated plate, and as a further preferable embodiment of the method for preparing nano indium oxide of the present invention, the inert electrode is preferably a graphite plate or a titanium plate.
The ammonium salt in the ammonium salt aqueous solution is at least one of an ammonium nitrate aqueous solution and an ammonium sulfate aqueous solution, and as a further preferable embodiment of the method for preparing nano indium oxide of the present invention, the ammonium salt in the ammonium salt aqueous solution is preferably an ammonium nitrate aqueous solution.
The ammonium salt aqueous solution is an ammonium nitrate aqueous solution with the ammonium nitrate concentration of 0.1-3 mol/L, and when the ammonium nitrate concentration is lower than 0.1mol/L, the voltage is increased during electrolysis, so that the electrified part generates heat, and the power cost is increased; when the concentration of ammonium nitrate is higher than 3mol/L, the salt content of the slurry obtained by electrolysis is high, so that the water consumption for removing impurity salt in indium hydroxide is increased, the economy and environmental protection are not enough, and the finally prepared indium oxide powder is thick and uneven in particle size distribution.
The pH value of the ammonium salt aqueous solution is 3.0-7.0, and when the pH value of the ammonium salt aqueous solution is less than 3.0, the settling property of the indium hydroxide generated by electrolysis is poor; when the pH value of the ammonium salt aqueous solution is greater than 7.0, the precipitation speed of the indium hydroxide is too high, so that the concentration of the anolyte is not uniform on one hand, and the indium hydroxide is directly precipitated on the other hand, so that the granularity range of the indium hydroxide is wider, and the finally prepared indium oxide is wider in granularity range and is not suitable for serving as a raw material of ITO powder.
In this example, the electrolytic reaction in the indium oxide production method was as follows:
an anode region: in → In3++3e
In3++3OH-→In(OH)3；
A cathode region: h++2e→H2。
The anode and the cathode are simultaneously arranged in an electrolytic chamber, the anode and the cathode are communicated by being in contact with electrolyte in the electrolytic chamber, and the reaction generated in the electrolytic process of the electrolytic chamber is as follows:
NH4NO3→NH4 ++NO3 -；
NH4 +→NH3+H+；
NH3+H2O→NH4 ++OH-。
in the electrolytic process, the current density of electrolysis is 500-2000A/m2. When the current density is less than 500A/m2In the process, the generation amount of indium hydroxide is reduced, and the productivity is lower; when the current density is more than 2000A/m2In the electrolysis, the cell voltage is significantly increased, the electrified part generates heat, and the energy consumption is increased.
In the electrolysis process, the electrolysis temperature is 25-50 ℃. When the electrolysis temperature is lower than 25 ℃, the precipitation speed of the indium hydroxide becomes too slow; when the electrolysis temperature is higher than 50 ℃, the energy consumption is high, the electrolyte is seriously volatilized, the environment is not environment-friendly, and the precipitation speed of the indium hydroxide is too high, so that the particle size distribution is widened.
In the electrolytic process, the pH value of the electrolyte is controlled to be 3-4, when the pH value is less than 3, nitrogen oxide overflows from the solution, indium hydroxide is difficult to precipitate, and when the pH value is more than 4, the electrolytic efficiency is reduced.
And heating the electrolyzed solution to a preset temperature after the electrolysis is carried out for the first preset time, and finally continuously adding an ammonia water solution into the electrolyzed solution and stirring for the second preset time to obtain the indium hydroxide.
The first preset time is 12-24 hours, after the electrolysis is carried out for 12-24 hours, the electrolyzed solution is heated to a preset temperature, the preset temperature is 60-80 ℃, when the temperature is lower than 60 ℃, the prepared indium hydroxide powder particles are too small, the agglomeration phenomenon is easy to occur during sintering, and when the temperature is higher than 80 ℃, the solution is volatilized in a large amount, so that the energy waste is caused.
And finally, continuously adding an ammonia water solution with a solute mass fraction of 10-35% into the electrolyzed solution, stirring for 1-2 h to obtain indium hydroxide, wherein the stirring speed in the stirring process is 30-70 r/min, the pH value can slowly rise in the process of adding the ammonia water solution, the indium hydroxide in the solution can be completely separated out, and the purpose of continuous stirring is to ensure that the particles are uniformly distributed, so that the phenomenon that some particles are larger and some particles are smaller can not occur.
In the continuous stirring process, the pH value of the electrolyte is measured every 10min, the pH value of the electrolyte is controlled to be 7-7.5, in the electrolysis process, indium hydroxide particles produced when the pH value of the electrolyte is controlled to be 3-4 are small, the indium hydroxide particles are unstable and easy to agglomerate at the moment, the agglomeration phenomenon is easy to occur during sintering, after heating and stirring, the indium hydroxide particles controlling the pH value of the electrolyte to be 7-7.5 are large, the indium hydroxide particles are uniform in distribution and difficult to agglomerate, the agglomeration phenomenon is difficult to occur during sintering, and then the nano-scale indium oxide with good stability, uniform particle size and uniform particle distribution can be prepared, and the industrial requirements can be met.
For further understanding of the present invention, the method and effects of the present invention will be described in further detail with reference to specific examples. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
Example 1.
One embodiment of the preparation method of the nano indium oxide is disclosed. The preparation method adopts an electrolysis device which is an electrolysis chamber, the size of the electrolysis chamber is 1000 x 500 x 150mm, the capacity is 7.5L, an anode and a cathode are simultaneously arranged in the electrolysis chamber, the anode and the cathode are communicated by being contacted with electrolyte in the electrolysis chamber, the electrode distance between the anode and the cathode is 30mm, and the preparation method of the embodiment comprises the following steps:
(1) adding ammonium nitrate water solution into the electrolytic chamber, controlling pH to 3, heating the electrolytic chamber to 50 deg.C, switching on the power supply, and setting current density to 500A/m2；
(2) After continuous electrolysis for 18h, heating the electrolyzed solution to 60 ℃, continuously adding an ammonia water solution with solute mass percent of 35% into the electrolyzed solution, stirring at the stirring speed of 30 r/min, measuring the pH value of the electrolyte once every 10min, controlling the pH value of the electrolyte to be 7, and stirring for 2h to obtain indium hydroxide;
(3) performing solid-liquid separation on indium hydroxide in the electrolyte by using a filter press, calcining the obtained indium hydroxide at the high temperature of 900 ℃ for 18h to obtain nano indium oxide powder, wherein the average particle size of the indium oxide powder is 48.55nm through tests, and the BET is 13085m2The scanning electron microscope image of the powder is shown in FIG. 1, the particle size distribution and BET data image are shown in FIG. 2, and it can be seen from FIG. 1 that the indium oxide powder has uniform particle size and uniform particle distribution.
Example 2.
One embodiment of the preparation method of the nano indium oxide is disclosed. The preparation method adopts an electrolysis device which is an electrolysis chamber, the size of the electrolysis chamber is 1000 x 500 x 150mm, the capacity is 7.5L, an anode and a cathode are simultaneously arranged in the electrolysis chamber, the anode and the cathode are communicated by being contacted with electrolyte in the electrolysis chamber, the electrode distance between the anode and the cathode is 30mm, and the preparation method of the embodiment comprises the following steps:
(1) adding ammonium nitrate water solution into the electrolytic chamber, controlling pH to 3.5 during electrolysis, heating the electrolytic chamber to 35 deg.C, switching on the power supply, and setting current density to 1300A/m2；
(2) After 24 hours of continuous electrolysis, heating the electrolyzed solution to 80 ℃, continuously adding an ammonia water solution with 20% of solute by mass into the electrolyzed solution, stirring at a stirring speed of 50 revolutions per minute, measuring the pH value of the electrolyte once every 10 minutes, controlling the pH value of the electrolyte to be 7.5, and stirring for 1 hour to obtain indium hydroxide;
(3) performing solid-liquid separation on indium hydroxide in the electrolyte by using a filter press, calcining the obtained indium hydroxide at the high temperature of 700 ℃ for 26 hours to obtain nano indium oxide powder, wherein the average particle size of the indium oxide powder is 48.1nm and the BET is 13190m through tests2The scanning electron microscope image of the powder is shown in FIG. 3, the particle size distribution and BET data image are shown in FIG. 4, and it can be seen from FIG. 3 that the indium oxide powder has uniform particle size and uniform particle distribution.
Example 3.
One embodiment of the preparation method of the nano indium oxide is disclosed. The preparation method adopts an electrolysis device which is an electrolysis chamber, the size of the electrolysis chamber is 1000 x 500 x 150mm, the capacity is 7.5L, an anode and a cathode are simultaneously arranged in the electrolysis chamber, the anode and the cathode are communicated by being contacted with electrolyte in the electrolysis chamber, the electrode distance between the anode and the cathode is 30mm, and the preparation method of the embodiment comprises the following steps:
(1) adding ammonium nitrate water solution into the electrolytic chamber, controlling pH to 4, heating the electrolytic chamber to 25 deg.C, switching on the power supply, and setting current density to 2000A/m2；
(2) After continuously electrolyzing for 12h, heating the electrolyzed solution to 70 ℃, continuously adding an ammonia water solution with solute mass fraction of 10% into the electrolyzed solution, stirring at a stirring speed of 70 r/min, measuring the pH value of the electrolyte once every 10min, controlling the pH value of the electrolyte to be 7.5, and stirring for 1.5h to obtain indium hydroxide;
(3) performing solid-liquid separation on indium hydroxide in the electrolyte by using a filter press, calcining the obtained indium hydroxide at the high temperature of 1200 ℃ for 14h to obtain nano indium oxide powder, wherein the average particle size of the indium oxide powder is 46.05nm and the BET is 13870m after tests2The scanning electron microscope image of the powder is shown in FIG. 5, the particle size distribution and BET data image are shown in FIG. 6, and it can be seen from FIG. 5 that the indium oxide powder has uniform particle size and uniform particle distribution.
According to the preparation method of the nano indium oxide, the solution after electrolysis is heated, neutralized, stirred, subjected to solid-liquid separation and calcined to obtain the nano indium oxide with good stability, uniform particle size and uniform particle distribution, and the technical problems that nano indium oxide powder prepared by the prior art is unstable in powder property due to excessively fine particle size, and then is uneven in particle distribution and easy to agglomerate are solved.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
Claims (10)
1. A preparation method of nano indium oxide is characterized by comprising the following steps: and finally, carrying out solid-liquid separation and calcination on the indium hydroxide in the electrolyte to obtain the nano indium oxide.
2. The method for preparing nano indium oxide according to claim 1, wherein the pH value of the electrolyte is measured every 10min during the process of continuously adding the ammonia water solution into the electrolyzed solution and stirring, so that the pH value of the electrolyte is controlled to be 7-7.5.
3. The method for preparing nano indium oxide according to claim 1, wherein the mass fraction of the solute in the ammonia solution is 10 to 35%.
4. The method for preparing nano indium oxide according to claim 1, wherein the predetermined temperature is 60 to 80 ℃.
5. The method for preparing nano indium oxide according to claim 1, wherein the second predetermined time is 1 to 2 hours.
6. The method for preparing nano indium oxide according to claim 1, wherein the first predetermined time is 12 to 24 hours.
7. The method for preparing nano indium oxide according to claim 1, wherein the stirring speed in the stirring process is 30 to 70 revolutions per minute.
8. The method for preparing nano indium oxide according to claim 1, wherein the aqueous ammonium salt solution is an aqueous ammonium sulfate solution or an aqueous ammonium nitrate solution.
9. The method for preparing nano indium oxide according to claim 1, wherein the current density of electrolysis is 500 to 2000A/m in the electrolysis process2The temperature of electrolysis is kept between 25 ℃ and 50 ℃, and the pH value of the electrolyte is controlled between 3 and 4.
10. The method for preparing nano indium oxide according to claim 1, wherein the calcining temperature is 700 to 1200 ℃ and the calcining time is 14 to 26 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010967348.3A CN112323084A (en) | 2020-09-15 | 2020-09-15 | Preparation method of nano indium oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010967348.3A CN112323084A (en) | 2020-09-15 | 2020-09-15 | Preparation method of nano indium oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112323084A true CN112323084A (en) | 2021-02-05 |
Family
ID=74303830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010967348.3A Pending CN112323084A (en) | 2020-09-15 | 2020-09-15 | Preparation method of nano indium oxide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112323084A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114045499A (en) * | 2021-12-16 | 2022-02-15 | 西北师范大学 | Preparation method of indium trioxide nanoparticles |
| CN114540826A (en) * | 2022-01-12 | 2022-05-27 | 株洲火炬安泰新材料有限公司 | Method for preparing high-activity indium oxide by electrolytic method and preparation method of ITO target |
| CN114807882A (en) * | 2022-05-06 | 2022-07-29 | 广东省科学院半导体研究所 | Magnetron sputtering target material, preparation method and application thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105264119A (en) * | 2013-05-27 | 2016-01-20 | 住友金属矿山株式会社 | Method for producing indium hydroxide powder, method for producing indium oxide powder, and sputtering target |
| JP2016037633A (en) * | 2014-08-07 | 2016-03-22 | 住友金属鉱山株式会社 | Electrolytic device for indium hydroxide powder or tin hydroxide powder, method for producing indium hydroxide powder or tin hydroxide powder, and method for producing sputtering target |
| CN105683416A (en) * | 2014-01-29 | 2016-06-15 | 住友金属矿山株式会社 | Process for producing indium hydroxide powder, and cathode |
| JP2016117927A (en) * | 2014-12-19 | 2016-06-30 | 住友金属鉱山株式会社 | Electrolytic device for indium hydroxide powder, method for producing indium hydroxide powder, and method for producing spattering target |
| CN107935026A (en) * | 2017-11-24 | 2018-04-20 | 郑州大学 | A kind of method and apparatus using electrolytic preparation nano indium oxide |
| CN109706467A (en) * | 2019-03-04 | 2019-05-03 | 河北恒博新材料科技股份有限公司 | The method of electrolytic preparation oxide of high activity indium |
| CN110644013A (en) * | 2019-10-30 | 2020-01-03 | 广东先导稀材股份有限公司 | Indium oxide and preparation method of precursor thereof |
-
2020
- 2020-09-15 CN CN202010967348.3A patent/CN112323084A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105264119A (en) * | 2013-05-27 | 2016-01-20 | 住友金属矿山株式会社 | Method for producing indium hydroxide powder, method for producing indium oxide powder, and sputtering target |
| CN105683416A (en) * | 2014-01-29 | 2016-06-15 | 住友金属矿山株式会社 | Process for producing indium hydroxide powder, and cathode |
| JP2016037633A (en) * | 2014-08-07 | 2016-03-22 | 住友金属鉱山株式会社 | Electrolytic device for indium hydroxide powder or tin hydroxide powder, method for producing indium hydroxide powder or tin hydroxide powder, and method for producing sputtering target |
| JP2016117927A (en) * | 2014-12-19 | 2016-06-30 | 住友金属鉱山株式会社 | Electrolytic device for indium hydroxide powder, method for producing indium hydroxide powder, and method for producing spattering target |
| CN107935026A (en) * | 2017-11-24 | 2018-04-20 | 郑州大学 | A kind of method and apparatus using electrolytic preparation nano indium oxide |
| CN109706467A (en) * | 2019-03-04 | 2019-05-03 | 河北恒博新材料科技股份有限公司 | The method of electrolytic preparation oxide of high activity indium |
| CN110644013A (en) * | 2019-10-30 | 2020-01-03 | 广东先导稀材股份有限公司 | Indium oxide and preparation method of precursor thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114045499A (en) * | 2021-12-16 | 2022-02-15 | 西北师范大学 | Preparation method of indium trioxide nanoparticles |
| CN114045499B (en) * | 2021-12-16 | 2023-11-28 | 西北师范大学 | Preparation method of indium trioxide nano particles |
| CN114540826A (en) * | 2022-01-12 | 2022-05-27 | 株洲火炬安泰新材料有限公司 | Method for preparing high-activity indium oxide by electrolytic method and preparation method of ITO target |
| CN114540826B (en) * | 2022-01-12 | 2023-09-19 | 株洲火炬安泰新材料有限公司 | Method for preparing high-activity indium oxide by electrolytic method and method for preparing ITO target |
| CN114807882A (en) * | 2022-05-06 | 2022-07-29 | 广东省科学院半导体研究所 | Magnetron sputtering target material, preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111763951B (en) | Preparation method of nano indium hydroxide | |
| CN112323084A (en) | Preparation method of nano indium oxide | |
| CN109763143B (en) | Resource recycling method for waste lead-acid batteries | |
| JP6090442B2 (en) | Method for producing indium hydroxide powder and method for producing indium oxide powder | |
| CN109306498B (en) | Preparation method, product and application of two-dimensional ultrathin niobium disulfide nanosheet | |
| JP2829556B2 (en) | Method for producing indium oxide powder | |
| CN104528728A (en) | Method for synthesizing nano-silicon powder by using silicon tetrachloride as raw material and application of nano-silicon powder | |
| CN110644013B (en) | Indium oxide and preparation method of precursor thereof | |
| JP2736498B2 (en) | Method for producing indium oxide-tin oxide powder | |
| CN108441886A (en) | A method of preparing metal using ionic liquid electrolytic metal oxide | |
| CN109536982B (en) | Preparation method of nano tin dioxide | |
| CN104047015B (en) | Method for preparing high-purity alumina powder by alternating current electrolysis | |
| US20230203675A1 (en) | Hydrogen evolution electrode and preparation method thereof | |
| JP6314904B2 (en) | Method for producing indium hydroxide powder, method for producing indium oxide powder, and method for producing sputtering target | |
| CN109065859A (en) | The carbon confinement nano material and its preparation method and application constructed is assembled based on metal-phenolic hydroxyl group network | |
| CN112645379A (en) | High-dispersity indium oxide and preparation method thereof | |
| CN109360979B (en) | Phosphate radical modified porous titanium dioxide and application thereof in sodium ion battery | |
| CN112575340A (en) | Method for simultaneously preparing high-purity magnesium hydroxide and high-purity graphene | |
| JP2736492B2 (en) | Method for producing indium oxide-tin oxide powder | |
| JPH06199523A (en) | Production of tin oxide powder | |
| KR100370401B1 (en) | Method for preparing indium tin oxide powder from indium tin oxide scrap | |
| CN1252316C (en) | Preparation of antimonic oxychloride by electrochemical sacrificial anode protection method | |
| CN110512225A (en) | Preparation method of zinc oxide powder | |
| CN114059126B (en) | Electrochemical preparation method of electrode surface modified nano tungsten trioxide hydrate | |
| CN114540826B (en) | Method for preparing high-activity indium oxide by electrolytic method and method for preparing ITO target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210205 |