CN112322289A - Bismuth-doped borate blue fluorescent material and preparation method thereof - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 58
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 30
- 238000010521 absorption reaction Methods 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 21
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000005284 excitation Effects 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims description 30
- 238000000227 grinding Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 229910052797 bismuth Inorganic materials 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 7
- 239000004327 boric acid Substances 0.000 claims description 7
- 238000001354 calcination Methods 0.000 claims description 7
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 7
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000001308 synthesis method Methods 0.000 abstract description 2
- 230000009102 absorption Effects 0.000 description 14
- 229910052593 corundum Inorganic materials 0.000 description 11
- 239000010431 corundum Substances 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000002284 excitation--emission spectrum Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical class [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- -1 rare earth ion Chemical class 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7712—Borates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention provides a bismuth-doped borate blue fluorescent material and a preparation method thereof, wherein the general chemical composition formula of the material is Sr3(1‑x)Y(BO3)3:3xBi3+Wherein x is a mole fraction, and x is more than or equal to 0.1 and less than or equal to 1.00 percent. The bismuth-doped borate fluorescent material is used for a white light LED device excited by an ultraviolet-near ultraviolet LED chip; the excitation band is relatively wide, and strong absorption is realized within the range of 300-400 nm; the number of the main absorption peaks is two, the centers of the two main absorption peaks are respectively 340nm and 370nm, and the strongest absorption peak is positioned in a near ultraviolet region; under the excitation of near ultraviolet light, blue light is emitted, the light is emitted in a broadband within the range of 395-550nm, and the center is positioned at 415 nm; low concentration, high luminous efficiency, good thermal stability, raw material saving, low production cost, stable structure, simple synthesis method and convenient large-scale production.
Description
Technical Field
The invention relates to the technical field of luminescent materials, in particular to a bismuth-doped borate blue fluorescent material and a preparation method thereof.
Background
Nowadays, research and development of white light LEDs are attracting great attention, and are considered as a new generation of illumination light source for replacing traditional illumination due to the remarkable advantages of low power consumption, high efficiency, long service life, fast response, good color rendering property, and the like.
The current commercial white light LED comprises a blue light LED chip and yellow YAG Ce3+Fluorescent materials are combined to produce white light by the mixing of blue light and yellow light. But the color rendering index is low due to insufficient red component in the emission (<80) And a higher relative color temperature (>4500K) Limiting its application in indoor lighting. In order to meet the requirement of high-quality illumination, researchers use near ultraviolet (350-. Therefore, the development of the three-primary-color fluorescent material capable of being effectively excited in the near ultraviolet region (350-.
The previous research on the white light LED tricolor fluorescent material mainly focuses on rare earth (Eu)2+，Eu3+Or Ce3+) Doping systems, such as sulfides, silicates, aluminates, nitrogen (oxygen) compounds, etc. However, they often have some insurmountable drawbacks (e.g., poor chemical stability, poor thermal stability, re-absorption problems of the phosphor) that ultimately result in such phosphors failing to meet the requirements of high quality white LED lighting applications.
In recent years, researchers have begun to focus on the non-rare earth ion, bismuth. Bismuth (Bi) as another activating ion due to its sensitivity to the surrounding coordination environment and its rich valency (e.g., Bi)0，Bi2+，Bi3+And Bi5+) The method is expected to realize special application in the field of photoelectric research and is widely researched and reported. Generally, in the host material, there is [ Xe]4f145d106s26p3Bi of electronic structure3+More stable than other valence states. At room temperature, Bi3+In the near ultravioletThe region (350-410nm) has a wider absorption band and almost no absorption in the visible light region, thereby avoiding the problems of low luminous efficiency and the like caused by reabsorption.
Among the three-primary-color fluorescent materials, the blue fluorescent material is an indispensable component in the three-primary-color fluorescent powder, the main effects are to improve the luminous efficiency and the color rendering property, and the emission wavelength and the spectral power of the blue fluorescent material have great influence on the luminous efficiency, the color temperature, the light decay and the color rendering property of the compact fluorescent lamp respectively. Therefore, the stable and efficient bismuth-doped blue fluorescent material is developed, and has great practical application significance in preparing white light LED lighting devices.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a bismuth-doped borate blue fluorescent material and a preparation method thereof, the material has absorption in a near ultraviolet region (350-410nm), no absorption in a visible light region, emission in a blue light region, and adjustable excitation and emission, and can meet the requirement of blue light emission generated by near ultraviolet excitation.
The technical scheme of the invention is as follows: the bismuth-doped borate blue fluorescent material has the chemical composition general formula of Sr3(1-x)Y(BO3)3:3xBi3+Wherein x is a mole fraction and is more than or equal to 0.1 and less than or equal to 1.00 percent.
Further, the material has strong absorption in the range of 300-400 nm; the two main absorption peaks are respectively at-340 nm and-370 nm, and the strongest absorption peak is located at 350-410nm in the near ultraviolet region.
Furthermore, the material emits blue light under the excitation of near ultraviolet light, the luminescence is emitted in a broadband within the range of 395-550nm, and the center is positioned at 415 nm.
The invention also provides a preparation method of the bismuth-doped borate blue fluorescent material, which comprises the following steps:
s1), according to the chemical composition formula Sr3(1-x)Y(BO3)3:3xBi3+Respectively weighing a strontium-containing compound raw material, an yttrium-containing compound raw material, a boron-containing compound raw material and a bismuth-containing compound raw material, grinding and uniformly mixing to obtain a mixture;
wherein x is a mole fraction and is more than or equal to 0.1% and less than or equal to 1.00%;
s2), mixing and grinding the raw materials in the step S1), pre-burning at 600-1000 ℃ for 1-5h, continuing to rise to 900-1200 ℃ for calcining for 8-12h, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate fluorescent material.
Further, in step S1), the sodium-containing compound raw material is one of strontium carbonate and strontium nitrate.
Further, in step S1), the yttrium-containing compound raw material is one of yttrium oxide and yttrium nitrate.
Further, in step S1), the boron-containing compound raw material is one of boric acid or boron trioxide.
Further, in step S1), the bismuth-containing compound raw material is one of bismuth trioxide and bismuth nitrate.
Further, in step S2), the bismuth-doped borate fluorescent material has strong absorption in the range of 300-400 nm; the two main absorption peaks are respectively at-340 nm and-370 nm, and the strongest absorption peak is located at 350-410nm in the near ultraviolet region.
Further, in step S2), the bismuth-doped borate fluorescent material emits blue light under the excitation of near ultraviolet light, the light is emitted in a broadband manner within 395-550nm, and the center is located at-415 nm.
The invention has the beneficial effects that:
1. the bismuth-doped borate fluorescent material can be applied to packaging of white light LED devices excited by ultraviolet-near ultraviolet LED chips;
2. the bismuth-doped borate fluorescent material has a wide excitation band and strong absorption in the range of 300-400 nm; two main absorption peaks are provided, the centers of the two main absorption peaks are respectively 340nm and 370nm, and the strongest absorption peak is positioned in a near ultraviolet region (350nm-410 nm);
3. the bismuth-doped borate fluorescent material disclosed by the invention emits blue light under the excitation of near ultraviolet light, the luminescence is emitted in a broadband manner within the range of 395-550nm, and the center of the luminescent material is positioned at 415-415 nm;
4. the bismuth-doped borate fluorescent material has low doping concentration, high luminous efficiency, good thermal stability, raw material saving and low production cost;
5. the bismuth-doped borate fluorescent material has a stable structure, and the synthesis method is simple and is convenient for large-scale production.
Drawings
FIG. 1 is an X-ray material end diffraction pattern of fluorescent materials prepared according to the compounding ratios (1) to (5) of example 1 of the present invention;
FIG. 2 shows the excitation emission spectra of the samples of formulations (1) to (5) in example 1 of the present invention.
Detailed Description
The following further describes embodiments of the present invention with reference to the accompanying drawings:
example 1
The embodiment provides a preparation method of a bismuth-doped borate blue fluorescent material, which comprises the following steps:
s1), selecting strontium carbonate, yttrium oxide, boric acid and bismuth trioxide as initial compound raw materials, and respectively weighing four compound raw materials according to the stoichiometric ratio of each element, wherein the mixture ratio is as follows:
(1) y, B, Bi, 2.9970, 1, 3, 0.0030, corresponding to x, 0.10%;
(2) y, B, Bi, 2.9955, 1, 3, 0.0045, corresponding to x, 0.15%;
(3) y, B, Bi, 2.9925, 1, 3, 0.0075, wherein x is 0.25%;
(4) y, B, Bi, 2.9850, 1, 3, 0.0150 corresponding to x, 0.50%;
(5) y, B, Bi, 2.9700, 1, 3, 0.0300 corresponds to x, 1.00%;
s2), grinding and uniformly mixing the mixture, and then putting the mixture into a corundum crucible; putting the corundum crucible into a high-temperature box type electric furnace. Strictly controlling the heating rate to be 5 ℃/min, presintering for 1h at 800 ℃, cooling to room temperature, grinding and uniformly mixing; then calcining for 10h at 1000 ℃, cooling to room temperature along with the furnace, and grinding to obtain the target fluorescent material, namely the bismuth-doped borate blue fluorescent material excited by the near-ultraviolet chip.
FIG. 1 shows the final derivatives of the wire materials obtained from the compositions (1) to (5) of this example at 1000 deg.CAnd (5) measuring by using a shooting instrument. The radiation source is Cu target Kalpha ray test voltage 40kV, test current 40mA, scanning step size 0.02 degree/step, scanning speed: 0.12 s/step. XRD pattern analysis shows that the phase of the sample obtained at 1000 ℃ is Sr3Y(BO3)3Phase of R-3(148)Triclinic system, doping of bismuth introduces no impurities.
FIG. 2 shows the excitation emission spectra of the samples of the formulations (1) to (5) in this example, with an excitation wavelength of 370 nm. Measured using a steady state transient fluorescence spectrometer model FLS920 from Edinburgh, england. A450W xenon lamp is used as an excitation light source and is provided with a time correction single photon counting card (TCSPC), a thermoelectric cold red sensitive Photomultiplier (PMT), a TM300 excitation monochromator and a double TM300 emission monochromator. As can be seen from FIG. 2, under the excitation of 370nm UV light, the samples all generated blue light with center at 415nm, covering 395 nm and 550nm, corresponding to Bi3+Is/are as follows3P1→1S0And (4) transition. And with Bi3+The intensity of the emission peak is obviously changed by the change of the doping concentration.
Example 2
In the embodiment, strontium carbonate, yttrium oxide, boric acid and bismuth trioxide are selected as raw materials of an initial compound, and the molar ratio of Sr to Y to B to Bi is 2.9955 to 1 to 3 to 0.0045, and x is 0.15 percent; the four compound raw materials are respectively weighed, the mixture is ground and uniformly mixed, then the mixture is loaded into a corundum crucible, and the corundum crucible is placed into a high-temperature box type electric furnace. Strictly controlling the heating rate to be 5 ℃/min and presintering for 1h at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 10h at 1100 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate blue fluorescent material. XRD pattern analysis shows that the compound is Sr3Y(BO3)3A crystalline phase. The spectral properties of the fluorescent material were similar to those of example 1.
Example 3
In the embodiment, strontium carbonate, yttrium oxide, boric acid and bismuth trioxide are selected as raw materials of an initial compound, and the molar ratio of Sr to Y to B to Bi is 2.9955 to 1 to 3 to 0.0045, and x is 0.15 percent; respectively weighing four compound raw materials, grinding and uniformly mixing the mixture, filling the mixture into a corundum crucible, and putting the corundum crucible into the corundum crucibleA high-temperature box type electric furnace. Strictly controlling the heating rate to be 5 ℃/min and presintering for 2h at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 10h at 1100 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate blue fluorescent material. XRD pattern analysis shows that the compound is Sr3Y(BO3)3A crystalline phase. The spectral properties of the fluorescent material were similar to those of example 1.
Example 4
In the embodiment, strontium carbonate, yttrium oxide, boric acid and bismuth trioxide are selected as raw materials of an initial compound, and the molar ratio of Sr to Y to B to Bi is 2.9955 to 1 to 3 to 0.0045, and x is 0.15 percent; the four compound raw materials are respectively weighed, the mixture is ground and uniformly mixed, then the mixture is loaded into a corundum crucible, and the corundum crucible is placed into a high-temperature box type electric furnace. Strictly controlling the heating rate to be 5 ℃/min and presintering for 2h at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 8h at 1200 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate blue fluorescent material. XRD pattern analysis shows that the compound is Sr3Y(BO3)3A crystalline phase. The spectral properties of the fluorescent material were similar to those of example 1.
Example 5
In the embodiment, strontium carbonate, yttrium oxide, boric acid and bismuth trioxide are selected as raw materials of an initial compound, and the molar ratio of Sr to Y to B to Bi is 2.9955 to 1 to 3 to 0.0045, and x is 0.15 percent; the four compound raw materials are respectively weighed, the mixture is ground and uniformly mixed, then the mixture is loaded into a corundum crucible, and the corundum crucible is placed into a high-temperature box type electric furnace. The temperature rise rate is strictly controlled, and the pre-sintering is carried out for 3 hours at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 8h at 1300 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate blue fluorescent material. XRD pattern analysis shows that the compound is Sr3Y(BO3)3A crystalline phase. The spectral properties of the fluorescent material were similar to those of example 1.
The foregoing embodiments and description have been presented only to illustrate the principles and preferred embodiments of the invention, and various changes and modifications may be made therein without departing from the spirit and scope of the invention as hereinafter claimed.
Claims (9)
1. The bismuth-doped borate blue fluorescent material is characterized in that the chemical composition general formula of the material is Sr3(1-x)Y(BO3)3:3xBi3+Wherein x is a mole fraction, and x is more than or equal to 0.1 and less than or equal to 1.00 percent;
the material emits blue light under the excitation of near ultraviolet light, the light is emitted in a broadband within the range of 395-550nm, and the center is positioned at 415 nm.
2. The bismuth-doped borate blue fluorescent material according to claim 1, wherein: the material has strong absorption in the range of 300-400 nm; the two main absorption peaks are respectively at-340 nm and-370 nm, and the strongest absorption peak is located at 350-410nm in the near ultraviolet region.
3. A method for preparing a bismuth-doped borate blue phosphor of any of claims 1-2, characterized in that: the method comprises the following steps:
s1), according to the chemical composition formula Sr3(1-x)Y(BO3)3:3xBi3+Respectively weighing a strontium-containing compound raw material, an yttrium-containing compound raw material, a boron-containing compound raw material and a bismuth-containing compound raw material, grinding and uniformly mixing to obtain a mixture;
wherein x is a mole fraction and is more than or equal to 0.1% and less than or equal to 1.00%;
s2), mixing and grinding the raw materials in the step S1), pre-burning at 600-1000 ℃ for 1-5h, continuing to rise to 900-1200 ℃ for calcining for 8-12h, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate fluorescent material.
4. The method for preparing a bismuth-doped borate blue fluorescent material according to claim 3, wherein the method comprises the following steps: in step S1), the sodium-containing compound raw material is one of strontium carbonate or strontium nitrate.
5. The method for preparing a bismuth-doped borate blue fluorescent material according to claim 3, wherein the method comprises the following steps: in step S1), the yttrium-containing compound raw material is one of yttrium oxide and yttrium nitrate.
6. The method for preparing a bismuth-doped borate blue fluorescent material according to claim 3, wherein the method comprises the following steps: in step S1), the boron-containing compound raw material is one of boric acid or boron trioxide.
7. The method for preparing a bismuth-doped borate blue fluorescent material according to claim 3, wherein the method comprises the following steps: in step S1), the bismuth-containing compound raw material is one of bismuth trioxide and bismuth nitrate.
8. The method for preparing a bismuth-doped borate blue fluorescent material according to claim 3, wherein the method comprises the following steps: in step S2), the bismuth-doped borate fluorescent material has strong absorption in the range of 300-400 nm; the two main absorption peaks are respectively at-340 nm and-370 nm, and the strongest absorption peak is located at 350-410nm in the near ultraviolet region.
9. The method for preparing a bismuth-doped borate blue fluorescent material according to claim 3, wherein the method comprises the following steps: in step S2), the bismuth-doped borate fluorescent material emits blue light under the excitation of near ultraviolet light, the light is emitted in a broadband manner within the range of 395-550nm, and the center is located at 415 nm.
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| Title |
|---|
| ANJUN HUANG ET AL.: "Photoluminescence properties in novel Ba2Y(BO3)2Cl:Bi3+ blue phosphors with various Bi3+ sites", 《MATERIALS LETTERS》 * |
| IRISH VALERIE B MAGGAY ET AL.: "Enhanced luminescence intensity of novel red-emitting phosphor Sr3Lu2(BO3)4:Bi3+,Eu3+ via energy transfer", 《JOURNAL OF SOLID STATE LIGHTING》 * |
| IRISH VALERIE B. MAGGAY ET AL.: "Novel Red-Emitting Ba3Y(BO3)3:Bi3+,Eu3+ Phosphors for N-UV White Light-Emitting Diodes", 《JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY》 * |
| SANJAY P. HARGUNANI ET AL.: "Blue Luminescent Phosphor Sr3Y1-x(BO3)3:xBi3+ for WLED Applications", 《MACROMOL. SYMP.》 * |
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