CN111575003A - Bismuth-doped borate blue fluorescent material and preparation method thereof - Google Patents
Bismuth-doped borate blue fluorescent material and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 52
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000002994 raw material Substances 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 238000010521 absorption reaction Methods 0.000 claims abstract description 23
- 230000005284 excitation Effects 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims description 25
- 238000000227 grinding Methods 0.000 claims description 23
- 238000002156 mixing Methods 0.000 claims description 17
- 239000011734 sodium Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 7
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 7
- 239000004327 boric acid Substances 0.000 claims description 7
- 238000001354 calcination Methods 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 7
- 238000005303 weighing Methods 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000001308 synthesis method Methods 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 description 19
- 239000010431 corundum Substances 0.000 description 19
- 230000009102 absorption Effects 0.000 description 12
- 238000009877 rendering Methods 0.000 description 7
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- -1 rare earth ions Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7712—Borates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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Abstract
The invention provides a bismuth-doped borate blue fluorescent material and a scheme, wherein the general formula of the chemical composition of the fluorescent material is Na2Y2(1‑x)B2O7:2xBi3+Wherein x is a mole fraction and is more than or equal to 0 and less than or equal to 1.00 percent. The fluorescent material has a wide excitation band and strong absorption in the range of 250-400 nm; the main absorption peaks are three, the centers of the three main absorption peaks are respectively 300nm, 345nm and 380nm, and the strongest absorption peak is positioned in a near ultraviolet region; the fluorescent material disclosed by the invention emits blue light under the excitation of near ultraviolet light, the light is emitted in a broadband manner within the range of 400-415 nm, and the center is positioned at-415 nm; the fluorescent material has low doping concentration, high luminous efficiency, raw material saving and low production cost; the fluorescent material has stable structure and simple synthesis method, is convenient for large-scale production, and can be widely used for white light LED devices excited by ultraviolet-near ultraviolet LED chips.
Description
Technical Field
The invention relates to the technical field of luminescent materials, in particular to a bismuth-doped borate blue fluorescent material and a preparation method thereof.
Background
White light LEDs are widely used in the fields of lighting, display, and decoration because of their significant advantages of low power consumption, high efficiency, long lifetime, fast response, good color rendering, and the like. The white light LED has good market prospect and huge social and economic benefits, and thus is also known as the fourth generation lighting source.
The current commercial white light LED mainly adopts a blue InGaN chip to excite YAG to Ce3+Yellow phosphor, which produces white light by the mixing of blue light and yellow light. However, due to lack of red light emission, the color temperature of the commercialized white light LED is higher, the color rendering index is lower, the light color is cooler, the color rendering is poor, and the application of the white light LED in indoor illumination is limited.
In order to overcome the technical problem, the prior art adopts a near ultraviolet (350-. Although white light with high color rendering property, high color rendering index and adjustable color temperature can be obtained by the scheme, the red, green and blue fluorescent materials are required to have absorption in a near ultraviolet region (350-. Therefore, the development of three-primary-color fluorescent materials capable of being effectively excited by near ultraviolet region (350-.
In the past, most researches on the three-primary-color fluorescent materials are concentrated on rare earth ions as an activator, but most of the rare earth ions show a strong absorption band in a visible region, so that the serious problem of reabsorption is caused, and the luminous efficiency is reduced. And main group Bi3+Has many advantages compared with rare earth, such as rich reserves and low price, and more importantly Bi3+Can be effectively excited by near ultraviolet region (350-.
Among the three-primary-color fluorescent materials, the blue fluorescent material is an indispensable component in the three-primary-color fluorescent powder, the main effects are to improve the luminous efficiency and the color rendering property, and the emission wavelength and the spectral power of the blue fluorescent material have great influence on the luminous efficiency, the color temperature, the light decay and the color rendering property of the compact fluorescent lamp respectively.
Therefore, the stable and efficient bismuth-doped blue fluorescent material is developed, and has great practical application significance in preparing white light LED lighting devices.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a bismuth-doped borate blue fluorescent material and a preparation method thereof, wherein the bismuth-doped borate blue fluorescent material has absorption in a near ultraviolet region (350-410nm), has no absorption in a visible light region, emits in a blue light region, has adjustable excitation and emission and can meet the requirement of blue light emission generated by near ultraviolet excitation.
The technical scheme of the invention is as follows: the chemical composition general formula of the bismuth-doped borate blue fluorescent material is Na2Y2(1-x)B2O7:2xBi3+Wherein x is a mole fraction and is more than or equal to 0 and less than or equal to 1.00 percent.
Preferably, the crystal structure of the fluorescent material belongs to an orthorhombic system, and the luminescent ion is Bi3+。
Preferably, the fluorescent material has a relatively wide excitation band, has strong absorption in the range of 250-400nm, has at least three main absorption peaks, the centers of the main absorption peaks are respectively-300 nm, -345 nm and-380 nm, and the strongest absorption peak is located in a near ultraviolet region (370nm-400 nm).
Preferably, the fluorescent material emits blue light under the excitation of near ultraviolet light, the light is emitted in a broadband within the range of 400-500nm, and the center is positioned at 415 nm.
The invention also provides a preparation method of the bismuth-doped borate blue fluorescent material, which comprises the following steps:
s1) according to the chemical composition general formulaNa2Y2(1-x)B2O7:2xBi3+Respectively weighing a sodium-containing compound raw material, an yttrium-containing compound raw material, a boron-containing compound raw material and a bismuth-containing compound raw material, and then grinding and uniformly mixing to obtain a mixture; wherein x is a mole fraction and 0<x≤1.00％；
S2) mixing and grinding the raw materials in the step S1) uniformly, pre-burning for 1-5h at 650-850 ℃, cooling to room temperature, grinding and uniformly mixing, then calcining for 3-8h at 900-1200 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate fluorescent material.
Preferably, in the above method, in step S1), the sodium-containing compound raw material is sodium bicarbonate or sodium carbonate.
Preferably, in the above method, in step S1), the yttrium-containing compound raw material is yttrium oxide or yttrium nitrate.
Preferably, in the above method, in the step S1), the boron-containing compound raw material is boric acid.
Preferably, in the above method, in step S1), the bismuth-containing compound raw material is bismuth trioxide or bismuth nitrate.
Preferably, the fluorescent material prepared in step S2) is used for a white LED device excited by an ultraviolet-near ultraviolet LED chip.
The invention has the beneficial effects that:
1. the fluorescent material has a wide excitation band and strong absorption in the range of 250-400 nm; three main absorption peaks are provided, the centers of the three main absorption peaks are respectively 300nm, 345nm and 380nm, and the strongest absorption peak is positioned in a near ultraviolet region (370nm-400 nm);
2. the fluorescent material disclosed by the invention emits blue light under the excitation of near ultraviolet light, the light is emitted in a broadband manner within the range of 400-415 nm, and the center is positioned at-415 nm;
3. the fluorescent material has low doping concentration, high luminous efficiency, raw material saving and low production cost;
4. the fluorescent material has stable structure and simple synthesis method, is convenient for large-scale production, and can be widely used for white light LED devices excited by ultraviolet-near ultraviolet LED chips.
Drawings
FIG. 1 is an X-ray material end diffraction pattern of fluorescent materials prepared according to the compounding ratios (1) to (5) of example 1 of the present invention;
FIG. 2 shows excitation spectra of samples of formulations (1) to (5) in example 1 of the present invention;
FIG. 3 shows emission spectra of samples of formulations (1) to (5) in example 1 of the present invention.
Detailed Description
The following further describes embodiments of the present invention with reference to the accompanying drawings:
example 1
The embodiment provides a preparation method of a bismuth-doped borate blue fluorescent material, which comprises the following steps:
s1), selecting sodium bicarbonate, yttrium oxide, boric acid and bismuth trioxide as initial compound raw materials, and respectively weighing four compound raw materials according to the stoichiometric ratio of each element, wherein the mixture ratio is as follows:
(1) na, Y, B, Bi, 1:0.9995:1:0.0005, corresponding to x, 0.05%;
(2) na, Y, B, Bi, 1, 0.99875, 1, 0.00125, corresponding to x, 0.125%;
(3) na, Y, B, Bi, 1:0.9975:1:0.0025, corresponding to x, 0.25%;
(4) na, Y, B, Bi, 1:0.995:1:0.005, corresponding to x, 0.5%;
(5) na, Y, B, Bi, 1, 0.99, 1, 0.01, corresponding to x, 1%;
s2), grinding and uniformly mixing the mixture, and then putting the mixture into a corundum crucible; the corundum crucible is placed in a corundum boat and put into a high-temperature box type electric furnace. The temperature rise rate is strictly controlled, and the pre-sintering is carried out for 1 hour at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 4h at 950 ℃, cooling to room temperature along with the furnace, and grinding to obtain the target fluorescent material, namely the near-ultraviolet excited bismuth-doped borate blue fluorescent material.
Example 2
S1), selecting sodium bicarbonate, yttrium oxide, boric acid and bismuth trioxide as starting compound raw materials, wherein the molar ratio of Na to Y to B to Bi is 1:0.9975:1:0.0025 to x is 0.25 percent; respectively weighing four compound raw materials;
s2), grinding and mixing the mixture evenly, then loading the mixture into a corundum crucible, placing the corundum crucible into a corundum boat, and placing the corundum crucible into a high-temperature box type electric furnace. The temperature rise rate is strictly controlled, and the pre-sintering is carried out for 1 hour at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 4h at 950 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate blue fluorescent material. XRD pattern analysis shows that the compound is Na2Y2B2O7A crystalline phase.
Example 3
S1), selecting sodium bicarbonate, yttrium oxide, boric acid and bismuth trioxide as starting compound raw materials, wherein the molar ratio of Na to Y to B to Bi is 1:0.9975:1:0.0025 to x is 0.25 percent; respectively weighing four compound raw materials;
s2), grinding and mixing the mixture evenly, then loading the mixture into a corundum crucible, placing the corundum crucible into a corundum boat, and placing the corundum crucible into a high-temperature box type electric furnace. The temperature rise rate is strictly controlled, and the pre-sintering is carried out for 2 hours at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining the mixture for 3 hours at 950 ℃, cooling the mixture to room temperature along with the furnace, and grinding the mixture to obtain the bismuth-doped borate blue fluorescent material. XRD pattern analysis shows that the compound is Na2Y2B2O7A crystalline phase.
Example 4
S1), selecting sodium bicarbonate, yttrium oxide, boric acid and bismuth trioxide as starting compound raw materials, wherein the molar ratio of Na to Y to B to Bi is 1:0.9975:1:0.0025 to x is 0.25 percent; respectively weighing four compound raw materials;
s2), grinding and mixing the mixture evenly, then loading the mixture into a corundum crucible, placing the corundum crucible into a corundum boat, and placing the corundum crucible into a high-temperature box type electric furnace. The temperature rise rate is strictly controlled, and the pre-sintering is carried out for 2 hours at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 2h at 1000 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate blue fluorescent material. XRD pattern analysis shows that the compound is Na2Y2B2O7A crystalline phase. The spectral properties of the fluorescent material were similar to those of example 1.
Example 5
S1), selecting sodium bicarbonate, yttrium oxide, boric acid and bismuth trioxide as starting compound raw materials, wherein the molar ratio of Na to Y to B to Bi is 1:0.9975:1:0.0025 to x is 0.25 percent; respectively weighing four compound raw materials;
s2), grinding and mixing the mixture evenly, then loading the mixture into a corundum crucible, placing the corundum crucible into a corundum boat, and placing the corundum crucible into a high-temperature box type electric furnace. The temperature rise rate is strictly controlled, and the pre-sintering is carried out for 3 hours at 800 ℃. Cooling to room temperature, grinding and uniformly mixing; then calcining for 2h at 1100 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate blue fluorescent material.
Example 6
This example was conducted to analyze the fluorescent material prepared in example 1, and as shown in FIG. 1, the samples (1) to (5) of example 1 were subjected to a measurement by a wire end diffractometer at 950 ℃ under a radiation source of Cu target K α with a radiation measuring voltage of 40kV, a measuring current of 40mA, a scanning step of 0.02 DEG/step, a scanning speed of 0.12s/step, XRD pattern analysis showed that the sample phase obtained at 950 ℃ was Na2Y2B2O7The phase belongs to an orthorhombic system, and impurities are not introduced in the doping of the bismuth.
As shown in FIG. 2, the emission spectra of the samples of formulations (1) to (5) in example 1 have an excitation wavelength of 380 nm. Measured using a steady state transient fluorescence spectrometer model FLS920 from Edinburgh, england. A450W xenon lamp is used as an excitation light source and is provided with a time correction single photon counting card (TCSPC), a thermoelectric cold red sensitive Photomultiplier (PMT), a TM300 excitation monochromator and a double TM300 emission monochromator. As shown in FIG. 2, under 380nm UV excitation, the samples all generated blue light with center at 415nm, wavelength covering 400-500nm, corresponding to Bi3+3P of1→1S0And (4) transition. And with Bi3+The intensity of the emission peak is obviously changed by the change of the doping concentration.
As shown in FIG. 3, the excitation wavelengths of the samples of the formulations (1) to (5) of example 1 were 380 nm. The test conditions were the same as in fig. 2.
The spectral properties of the phosphors of examples 2-5 are similar to example 1.
The foregoing embodiments and description have been presented only to illustrate the principles and preferred embodiments of the invention, and various changes and modifications may be made therein without departing from the spirit and scope of the invention as hereinafter claimed.
Claims (10)
1. The chemical composition general formula of the bismuth-doped borate blue fluorescent material is Na2Y2(1-x)B2O7:2xBi3+Wherein x is a mole fraction and is more than or equal to 0 and less than or equal to 1.00 percent;
the crystal structure of the fluorescent material belongs to an orthorhombic system, and the luminescent ions are Bi3+。
The fluorescent material has strong absorption in the range of 250-400nm, at least three main absorption peaks with the centers of-300 nm, -345 nm and-380 nm respectively, and the strongest absorption peak is positioned in a near ultraviolet region (370nm-400 nm).
2. The bismuth-doped borate blue fluorescent material according to claim 1, wherein: the fluorescent material emits blue light under the excitation of near ultraviolet light, the light is emitted in a broadband within the range of 400-415 nm, and the center of the light is positioned at 415 nm.
3. A preparation method of a bismuth-doped borate blue fluorescent material is characterized by comprising the following steps:
s1) according to the chemical composition general formula Na2Y2(1-x)B2O7:2xBi3+Respectively weighing a sodium-containing compound raw material, an yttrium-containing compound raw material, a boron-containing compound raw material and a bismuth-containing compound raw material, and then grinding and uniformly mixing to obtain a mixture; wherein x is a mole fraction and 0<x≤1.00％；
S2) mixing and grinding the raw materials in the step S1) uniformly, pre-burning for 1-5h at 650-850 ℃, cooling to room temperature, grinding and uniformly mixing, then calcining for 3-8h at 900-1200 ℃, cooling to room temperature along with the furnace, and grinding to obtain the bismuth-doped borate fluorescent material.
4. The method according to claim 3, wherein in step S1), the sodium-containing compound is sodium bicarbonate or sodium carbonate.
5. The method according to claim 3, wherein in step S1), the yttrium-containing compound is yttrium oxide or yttrium nitrate.
6. The method according to claim 3, wherein in step S1), the boron-containing compound is boric acid.
7. The method according to claim 3, wherein in step S1), the bismuth-containing compound is bismuth trioxide or bismuth nitrate.
8. The method as claimed in claim 3, wherein the fluorescent material prepared in step S2) has strong absorption in the range of 250-400nm, the main absorption peaks have at least three, the centers of the main absorption peaks are respectively-300 nm, -345 nm and-380 nm, and the strongest absorption peak is located in the near ultraviolet region (370nm-400 nm).
9. The method as claimed in claim 3, wherein the fluorescent material emits blue light under the excitation of near-UV light, the emission is broadband emission within the range of 400-500nm, and the center is located at-415 nm.
10. The method for preparing the bismuth-doped borate blue fluorescent material according to claim 3, wherein the fluorescent material prepared in the step S2) is used for a white LED device excited by an ultraviolet-near ultraviolet LED chip.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2011066685A1 (en) * | 2009-12-04 | 2011-06-09 | 海洋王照明科技股份有限公司 | Borate luminous material and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011066685A1 (en) * | 2009-12-04 | 2011-06-09 | 海洋王照明科技股份有限公司 | Borate luminous material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| SHENG WU ET AL.: "Bismuth activated high thermal stability blue-emitting phosphor Na2Y2B2O7:Bi used for near-UV white-light LEDs", 《JOURNAL OF MATERIALS CHEMISTRY C》 * |
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