CN112305399B - Surge testing method and device for front-end acquisition chip of BMS (battery management system) of electric automobile - Google Patents
Surge testing method and device for front-end acquisition chip of BMS (battery management system) of electric automobile Download PDFInfo
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- CN112305399B CN112305399B CN201910709104.2A CN201910709104A CN112305399B CN 112305399 B CN112305399 B CN 112305399B CN 201910709104 A CN201910709104 A CN 201910709104A CN 112305399 B CN112305399 B CN 112305399B
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- G01—MEASURING; TESTING
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2803—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP] by means of functional tests, e.g. logic-circuit-simulation or algorithms therefor
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Abstract
The invention provides a surge test method and a device for a front-end acquisition chip of an electric vehicle BMS (battery management system), wherein the test device comprises a resonance part and a control part, the resonance part is connected with the control part in series, the resonance part comprises a power battery module, an inductor L and a capacitor C1, the control part comprises a forward test part and a reverse test part, the forward test part is connected with the reverse test part in parallel, the test method comprises an acquisition chip dormancy state test method and an acquisition chip working state test method, and the invention uses one device to simultaneously carry out port anti-surge test on a plurality of voltage acquisition ports and equalization ports, so the operation is convenient; under the working state and the dormant state of the acquisition chip, anti-surge test can be performed, and the test result is closer to the real situation of the battery module during working; in addition, the number of the test ports can be flexibly changed by increasing the number of the electric cores and the inductors in the device, the application range is wide, and the test cost is low.
Description
Technical Field
The invention relates to the field of electric vehicle chip testing, in particular to a surge testing method and device for a front-end acquisition chip of an electric vehicle BMS.
Background
Along with new energy field electric automobile's brisk development, electric automobile BMS's reliability is also more and more taken into account, and the monomer voltage gathers the problem that the reliability is more outstanding day by day, and it is especially important with the reliability test to carry out over pressure test to BMS, needs the anti surge ability of port of test voltage collection chip.
The current general test method is: under the condition that the chip is not powered on, injecting pulse voltage into each port of the chip for testing, but under the condition, the voltage withstanding test of the ports of the chip is difficult to carry out under the working condition of the chip; in the situation of many acquisition channels, many pulse voltage test devices are required, and the devices need to be purchased at high cost, which can seriously increase the test cost.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the surge testing method and device for the acquisition chip at the front end of the BMS of the electric automobile, which can be used for carrying out surge testing on the test chip in work and reducing the testing cost.
The invention provides a surge testing device for a front-end acquisition chip of a BMS (battery management system) of an electric automobile, which is characterized by comprising a resonance part and a control part, wherein the resonance part is connected with the control part in series, the resonance part comprises a power battery module, an inductor L and a capacitor C1, the control part comprises a forward testing part and a reverse testing part, and the forward testing part is connected with the reverse testing part in parallel.
Further, the power battery module comprises N power battery cores, wherein N is more than or equal to 2.
Further, the resonance part at least includes one inductor L, and the inductors L correspond to the power battery cells one to one and are connected in series with each power battery cell.
Further, the capacitor C1 is connected in parallel with the whole power battery module.
Further, the forward test portion comprises an external POWER supply POWER _1, a second load resistor R2 and a switch KEY _1, wherein the external POWER supply POWER _1, the second load resistor R2 and the switch KEY _1 are connected in series.
Further, the reverse test portion includes a first load resistor R1 and a switch KEY _2, where the first load resistor R1 is connected in series with the switch KEY _2.
The invention also provides a surge test method for the front-end sampling chip of the BMS of the electric automobile, which is characterized in that: the method comprises a collection chip dormancy state testing method and a collection chip working state testing method.
Further, the method for testing the sleep state of the acquisition chip comprises the following steps:
the method comprises the following steps: normally connecting the wiring harness of the acquisition system, adjusting the state of the acquisition chip according to the requirement, and sending a command to enable the acquisition chip to enter a dormant state or a working state.
Step two: and closing the switch KEY _1, controlling the current direction to be the same as the charging current direction, and adjusting the current value, the energy and the amplitude of the surge pulse signal to reach preset values.
Step three: and after a period of time, disconnecting the KEY _1, repeating the second step and the third step n times, and testing the port n times.
Step four: detecting whether the dormancy current of the chip is normal and confirming whether the acquisition chip is damaged: and if the acquisition chip is damaged, judging that the acquisition chip does not meet the anti-surge requirement, if the acquisition chip is normal, judging that the acquisition chip meets the anti-surge requirement under the condition that forward current is externally provided, and performing the fifth step.
Step five: and closing the switch KEY _2, controlling the current direction to be opposite to the charging current direction, and adjusting the current value and the energy and amplitude of the surge pulse signal to reach preset values.
Step six: and after a period of time, suddenly disconnecting the KEY _2, repeating the fifth step and the sixth step n times, and testing the port n times.
Step seven: detecting whether the dormancy current of the chip is normal and confirming whether the chip is damaged: if the acquisition chip is damaged, the chip is replaced and then the test is started from the step 1, if the acquisition chip is normal, the acquisition chip is judged to meet the anti-surge requirement under the condition that reverse current is externally provided, and the anti-surge capacity of the acquisition chip is defined to meet the requirement.
Furthermore, the current value, the energy of the surge pulse signal and the amplitude preset value are represented by the formula N x L I 2 ＝C*V 2 And determining, wherein L is an inductance value of an inductor connected with a single battery cell in series, I is a preset current value, C is a battery value, and V is a total voltage value of the battery module.
The invention provides a surge testing method and device for a front-end acquisition chip of an electric vehicle BMS (battery management system), which can simultaneously perform port anti-surge testing on a plurality of voltage acquisition ports and equalization ports by using one device and are convenient to operate; the acquisition chip to be tested is arranged in the battery module, and can be subjected to anti-surge test in the working state and the dormant state of the acquisition chip, and the test result is closer to the real situation of the battery module during working; in addition, the testing device provided by the invention can flexibly change the number of the testing ports by increasing the number of the battery cores and the inductors in the device, and has the advantages of wide application range and low testing cost.
Drawings
Fig. 1 is a flowchart of a surge testing method for a front-end acquisition chip of an electric vehicle BMS.
Fig. 2 is a schematic circuit diagram of a front end acquisition chip surge testing device of an electric vehicle BMS.
Wherein 1 is a resonance part, 11 is a POWER battery cell BAT _ X, 12 is an inductor L, 13 is a capacitor C1, 2 is a control part, 21 is a forward direction test part, 211 is an external POWER supply POWER _1, 212 is a second load resistor R2, 213 is a switch KEY _1, 22 is a reverse direction test part, 221 is a first load resistor R1, 222 is a switch KEY _2.
Detailed Description
The present invention will be described in further detail below with reference to the accompanying drawings.
As shown in fig. 2, the invention provides a surge testing device for a front-end acquisition chip of an electric vehicle BMS, which comprises a resonance part (1) and a control part (2), wherein the resonance part (1) is connected with the control part (2) in series, the resonance part (1) comprises a power battery module (11), an inductor L (12) and a capacitor C1 (13), the control part (2) comprises a forward testing part (21) and a reverse testing part (22), and the forward testing part (21) is connected with the reverse testing part (22) in parallel.
Furthermore, the power battery module (11) comprises N power battery cores (111), and N is larger than or equal to 2.
Furthermore, the resonance part (1) at least comprises an inductor L (12), and the inductors L (12) correspond to the power battery cells (111) one by one and are connected with each power battery cell (111) in series.
Further, the capacitor C1 (13) is connected with the whole power battery module (11) in parallel.
Further, the forward test part (21) includes an external POWER supply POWER _1 (211), a second load resistor R2 (212), and a switch KEY _1 (213), and the external POWER supply POWER _1 (211), the second load resistor R2 (212), and the switch KEY _1 (213) are connected in series.
Further, the reverse test part (22) includes a first load resistor R1 (221) and a switch KEY _2 (222), and the first load resistor R1 (221) is connected in series with the switch KEY _2 (222).
The invention further provides a surge testing method for the front-end acquisition chip of the BMS of the electric automobile.
As shown in fig. 1, the method for testing the sleep state of the acquisition chip includes the following steps:
the method comprises the following steps: normally connecting the wiring harness of the acquisition system, adjusting the state of the acquisition chip according to the requirement, and sending a command to enable the acquisition chip to enter a dormant state or a working state.
Step two: and closing the switch KEY _1, controlling the current direction to be the same as the charging current direction, and adjusting the current value, the energy and the amplitude of the surge pulse signal to reach preset values.
Step three: and after a period of time, disconnecting the KEY _1, repeating the second step and the third step n times, and testing the port n times.
Step four: detecting whether the dormant current of the chip is normal or not and confirming whether the acquisition chip is damaged or not: and if the acquisition chip is damaged, judging that the acquisition chip does not meet the anti-surge requirement, if the acquisition chip is normal, judging that the acquisition chip meets the anti-surge requirement under the condition that forward current is externally provided, and performing the fifth step.
Step five: and closing the switch KEY _2, controlling the current direction to be opposite to the charging current direction, and adjusting the current value, the energy and the amplitude of the surge pulse signal to reach preset values.
Step six: and after a period of time, suddenly disconnecting the KEY _2, repeating the fifth step and the sixth step for n times, and testing the port for n times.
Step seven: detecting whether the dormancy current of the chip is normal and confirming whether the chip is damaged: if the acquisition chip is damaged, the acquisition chip is judged not to meet the anti-surge requirement, if the acquisition chip is normal, the acquisition chip is judged to meet the anti-surge requirement under the condition that reverse current is externally provided, and the anti-surge capacity of the acquisition chip is defined to meet the requirement.
Furthermore, the preset values of the current value, the energy and the amplitude of the surge pulse signal are represented by the formula N L I 2 ＝C*V 2 And determining, wherein L is an inductance value of an inductor connected with a single battery cell in series, I is a preset current value, C is a battery value, and V is a total voltage value of the battery module.
Energy storage formula according to inductance
It can be known that the energy of the surge can be changed by changing the inductance and the current magnitude in the path; energy storage formula according to capacitance
It can be known that the maximum amplitude of the surge can be changed by changing the capacitance and the surge energy.
The method is different from the method for testing the anti-surge capacity of the chip port by generating surge voltage through a signal generator and injecting the surge voltage into the chip port in the market, the method ensures that a system resonates by connecting an inductor in series with each series of electric cores in a power battery module and connecting a capacitor in parallel with the power battery module, when the series inductor resonates with the parallel capacitor, the whole circuit generates the surge voltage, and the generated surge voltage is averagely injected into each monomer voltage acquisition port and the balanced MOSFET port, so that the anti-surge capacity of a plurality of ports of the acquisition chip can be tested at the same time.
The invention controls the current direction in the whole test circuit through two circuits of an external power supply and a load resistor respectively, is convenient for testing different performances of the acquisition chip under two conditions, and can comprehensively evaluate and acquire the anti-surge capacity of a new product and related circuits and find the defects of the existing protection measures.
If the inductance of a single-string battery cell is L, the passing current is I, the string number of the battery cells is N, the parallel-connected capacitor of the module is C, and the surge energy of a single acquisition port is L
Total energy
Energy of the capacitor
When the system is in energy conservation, E = ECAP, so N L I 2 ＝C*V 2 。
As an embodiment of the present invention, a battery module formed by grouping 12 battery cells is selected, an inductance value of an inductor connected in series with each battery cell is 470uH, a capacitance value of the whole module connected in parallel is 0,25uf, and currents I =3, 6, and 9A are respectively controlled to perform a comparative test on surge resistance of two chips, I6812 and MAX17823, and test results are shown in the following table:
as can be seen from the above table, the port surge protection capability of LTC6812 is better than that of MAX 17823.
It should be understood that the above-mentioned embodiments are only for simple illustration to facilitate the understanding of the technical solutions for those skilled in the art, and do not mean that the present invention has only one of the above-mentioned embodiments, and any different embodiments which are identical to the principle of the present invention and are only replaced by simple and common technical means are within the protection scope of the present invention.
Claims (6)
1. A surge testing device for a front-end acquisition chip of an electric vehicle BMS (battery management system) is characterized by comprising a resonance part and a control part, wherein the resonance part is connected with the control part in series, the resonance part comprises a power battery module, an inductor L and a capacitor C1, the control part comprises a forward testing part and a reverse testing part, the forward testing part is connected with the reverse testing part in parallel, the power battery module comprises N power battery cells, N is more than or equal to 2, the resonance part at least comprises one inductor L, the inductors L correspond to the power battery cells one by one and are connected with each power battery cell in series to form a plurality of series circuits, the plurality of series circuits are connected in series, and two ends of each series circuit are respectively connected to a voltage acquisition port of the front-end acquisition chip;
the capacitor C1 is connected with the whole power battery module in parallel;
when the series inductor resonates with the parallel capacitor, the surge voltage is equally injected to each cell voltage acquisition port.
2. The device for testing the surge of the BMS front-end acquisition chip of the electric vehicle according to claim 1, wherein the forward test part comprises an external POWER supply POWER _1, a second load resistor R2 and a switch KEY _1, and the external POWER supply POWER _1, the second load resistor R2 and the switch KEY _1 are connected in series.
3. The front end collection chip surge testing device for the BMS of the electric vehicle according to claim 1, wherein the reverse testing part comprises a first load resistor R1 and a switch KEY _2, and the first load resistor R1 is connected with the switch KEY _2 in series.
4. A surge testing method for a front-end acquisition chip of an electric vehicle BMS is characterized by comprising the following steps: the BMS front end acquisition chip surge testing device of any one of claims 1-3 is adopted for testing, and the surge testing method is divided into an acquisition chip dormancy state testing method and an acquisition chip working state testing method.
5. The electric vehicle BMS front end acquisition chip surge testing method according to claim 4, wherein the acquisition chip sleep state testing method comprises the following steps:
the method comprises the following steps: normally connecting the wiring harness of the acquisition system, adjusting the state of an acquisition chip according to the requirement, and sending a command to enable the acquisition chip to enter a dormant state or a working state;
step two: closing a switch KEY _1, controlling the current direction to be the same as the charging current direction, and adjusting the current value and the energy and amplitude of the surge pulse signal to reach preset values;
step three: disconnecting the KEY _1 after a period of time, repeating the second step and the third step n times, and testing the port n times;
step four: detecting whether the dormancy current of the chip is normal and confirming whether the acquisition chip is damaged: if the acquisition chip is damaged, judging that the acquisition chip does not meet the anti-surge requirement, if the acquisition chip is normal, judging that the acquisition chip meets the anti-surge requirement under the condition that forward current is provided externally, and performing the fifth step;
step five: closing a switch KEY _2, controlling the current direction to be opposite to the charging current direction, and adjusting the current value, the energy and the amplitude of the surge pulse signal to reach preset values;
step six: after a period of time, suddenly disconnecting the KEY _2, repeating the fifth step and the sixth step for n times, and testing the port for n times;
step seven: detecting whether the dormancy current of the chip is normal and confirming whether the chip is damaged: if the acquisition chip is damaged, the acquisition chip is judged not to meet the anti-surge requirement, if the acquisition chip is normal, the acquisition chip is judged to meet the anti-surge requirement under the condition that reverse current is externally provided, and the anti-surge capacity of the acquisition chip is defined to meet the requirement.
6. The method for testing the surge of the BMS front-end acquisition chip of the electric automobile according to claim 5, wherein the method is based on a formula
Setting the energy preset value of the surge pulse signal by setting the current value and the inductance value according to the formula
Through setting for electric capacity and surge energy, set for the maximum amplitude of surge, wherein L is the inductance value with the inductance of single electric core series connection, and I is for predetermineeing the current value, and N is electric core cluster number, and C is the capacitance value, and V is battery module total voltage.
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| CN115792583B (en) * | 2023-02-06 | 2023-05-12 | 中国第一汽车股份有限公司 | Method, device, equipment and medium for testing vehicle-gauge chip |
| CN116908599B (en) * | 2023-09-12 | 2023-12-01 | 中汽研新能源汽车检验中心(天津)有限公司 | Surge test monitoring system, method, equipment and medium for automobile alternating-current charging port |
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| GB1229242A (en) * | 1968-05-29 | 1971-04-21 | ||
| CN101629981B (en) * | 2009-05-19 | 2011-09-14 | 武汉大学 | Modularized multiple wave forms impact generator test device |
| CN101777936B (en) * | 2009-07-02 | 2013-03-27 | 北京东土科技股份有限公司 | Surge immunity test method of high-speed signal wire |
| CN101762776B (en) * | 2009-11-30 | 2013-01-30 | 福建星网锐捷网络有限公司 | Method and device for testing voltage withstanding degree of port |
| EP2333925B1 (en) * | 2009-12-08 | 2013-02-13 | Raychem International | Surge arrester condition monitoring |
| CN101839952B (en) * | 2010-04-27 | 2012-06-27 | 北京星网锐捷网络技术有限公司 | Method and system for testing surge |
| CN102162829B (en) * | 2011-03-18 | 2012-12-26 | 武汉大学 | Experimental device for multiple lightning current return strokes of surge protection device (SPD) |
| CN202856653U (en) * | 2012-10-26 | 2013-04-03 | 杭州远方仪器有限公司 | Surge generator |
| DE102015013433B3 (en) * | 2015-10-16 | 2017-01-26 | TRIDELTA Meidensha GmbH | Monitoring device for a surge arrester and monitoring system with a monitoring device |
| CN106154157B (en) * | 2016-09-30 | 2023-10-10 | 国网冀北电力有限公司电力科学研究院 | Adjustable surge load test device for electromagnetic relay |
| CN107843759A (en) * | 2017-09-28 | 2018-03-27 | 北京空间技术研制试验中心 | The surge current test system and method for testing of electronic equipment in spacecraft |
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Address after: 518000 1-2 Floor, Building A, Xinwangda Industrial Park, No. 18 Tangjianan Road, Gongming Street, Guangming New District, Shenzhen City, Guangdong Province Patentee after: Xinwangda Power Technology Co.,Ltd. Address before: 518107 Xinwangda Industrial Park, No.18, Tangjia south, Gongming street, Guangming New District, Shenzhen City, Guangdong Province Patentee before: SUNWODA ELECTRIC VEHICLE BATTERY Co.,Ltd. |