CN112304365B - On-orbit micro space debris multi-parameter measuring probe and measuring method - Google Patents

On-orbit micro space debris multi-parameter measuring probe and measuring method Download PDF

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CN112304365B
CN112304365B CN202011026809.3A CN202011026809A CN112304365B CN 112304365 B CN112304365 B CN 112304365B CN 202011026809 A CN202011026809 A CN 202011026809A CN 112304365 B CN112304365 B CN 112304365B
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film
charge
resistor
impact
capacitor
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向宏文
郝志华
李衍
孙华亮
蔡震波
张志平
戴孟瑜
秦珊珊
闫军
李怀锋
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Beijing Institute of Spacecraft System Engineering
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Abstract

The invention relates to an in-orbit micro space debris multi-parameter measuring probe and a measuring method, belongs to the field of space debris monitoring and measuring, and relates to an in-orbit passive micro debris size, speed and mass multi-parameter measuring method for measuring loads of in-orbit space debris of a spacecraft. The invention comprises front and rear film sensors, front and rear charge collecting electrodes, a charge measuring amplifier and a high-frequency pulse counter. The front and rear films are plated with metal films, equidistant charge collecting wires are arranged behind the front film and in front of the rear film, and negative direct current voltage is applied between the collecting electrodes and the films and used for collecting charge signals generated when tiny fragments impact the front and rear films. The charges generated by the front and rear films are collected by the collecting electrode and amplified into voltage pulse signals by the charge amplifier, and the time difference of the impact signals on the front and rear films is measured by the high-frequency pulse counter to obtain speed and direction information. The energy of the impact debris is obtained from the charge quantity signal, and the mass of the space debris can be obtained through the combination speed.

Description

On-orbit micro space debris multi-parameter measuring probe and measuring method
Technical Field
The invention belongs to the field of space debris monitoring and measurement, and relates to an in-orbit micro space debris multi-parameter measurement probe and a measurement method.
Background
At present, the threat degree of more and more space debris to the on-orbit operation of more and more spacecrafts is more and more severe, the research on the space debris is highly emphasized in related fields at home and abroad, and the observation and monitoring on the space debris are the basis for developing the research on the space debris; a large amount of ground optical and radio observation equipment established at home and abroad can observe space debris with the size of centimeter or more, and special in-orbit measurement equipment needs to be installed on a spacecraft for measuring the space debris (with the size of submillimeter or below, space debris, China aerospace publishing Co., Ltd., Henheng and the like).
The measurement technology based on the MOS capacitor is that voltage pulses generated after tiny fragments impact the MOS capacitor are measured on a track, the flux of the tiny fragments is measured, and the flux of the tiny fragments with the size of micron or above can be measured (see figure 1); this technology has been applied to long-term exposure facilities (LDEF), micro-fluidic satellite technology (MTS), and International Space Station (ISS).
The measurement technology of polyvinylidene fluoride (PVDF) film utilizes the piezoelectric property of PVDF, when a space debris impacts PVDF sensors, local dipoles are caused to be polarized rapidly, larger rapid charge pulses are generated, and the energy and flux of the debris can be obtained by measuring the pulse amplitude (see figure 1); the PVDF film detector is a DUCMA detector which is carried on a weaving girl I and a weaving girl II and is used for detecting the number of dust impact of Harley comet and analyzing the quality; the piezoelectric property of the PVDF sensor changes with the environment, and the deviation of the measured information is large.
The technical principle of the space debris plasma detector is as follows: when space debris impact a detector target body at a high speed, a large amount of plasma is generated, electrons and ions in the plasma are separated through an electric field, and the current of the electrons or the ions is measured to obtain the speed of the space debris.
The measuring method adopts an electronic circuit (active) mode to obtain measuring data and information on track; the Chinese patent (CN201010522728.2) discloses a passive (without circuit) measurement mode, which utilizes a film exposed in space to capture tiny fragments, then transports the detection film back to the ground, and adopts a physical analysis method to analyze the injection depth of the tiny fragments and the chemical composition of the fragments, and the method can not measure the information of the tiny space fragments in real time and can not measure the speed.
Disclosure of Invention
The technical problem solved by the invention is as follows: the method comprises the steps of measuring the ion charge amount in plasma generated by the impact of high-speed tiny fragments on a plane film, measuring the fragment speed by adopting a flight time method, and obtaining the speed (not less than 2km/s) and mass data (not less than 10) of the tiny fragments-11g) And mass.
The technical scheme of the invention is as follows: an on-orbit tiny space debris impact measuring probe comprises a front film, a rear film, M front film collecting electrodes, N rear film collecting electrodes, M front film charge amplifiers, N rear film charge amplifiers, a front film impact trigger, a rear film impact trigger, a front film collecting electrode charge signal summing amplifier, a rear film collecting electrode charge signal summing amplifier and a high-frequency pulse counter, wherein M is more than or equal to 10, and N is more than or equal to 10;
the front film is placed facing to the impact direction of the tiny fragments, a metal film is plated on the plane of the front film, which is back to the impact direction of the tiny fragments, equidistant charge collection wires are arranged behind the metal film, negative direct current voltage is applied between the collection wires and the front film, and the charge collection wires are used as front collection electrodes and used for collecting charge signals generated when the tiny fragments impact the front film;
the rear film and the front film are parallel to each other and keep a certain interval, the plane of the rear film facing to the impact direction of the tiny fragments is plated with a metal film, an equidistant charge collecting wire is arranged in front of the metal film, namely a rear film collecting electrode, and negative direct current voltage is applied between the front film collecting electrode and the rear film and is used for collecting charge signals generated when the tiny fragments impact on the rear film;
the charge signals collected by the M front film collecting electrodes are respectively amplified by a front film charge amplifier to obtain M front film voltage pulse signals, the M front film voltage pulse signals enter a front film impact trigger and a front film collecting electrode charge signal addition amplifier, and in the front film impact trigger, the M front film voltage pulse signals are subjected to OR operation to obtain front film impact signals; in a front film collecting electrode charge signal addition amplifier, adding the amplitudes of M voltage pulse signals to obtain the total charge amount generated by front film impact;
the charge signals collected by the N rear collecting electrodes are respectively amplified by a rear film charge amplifier to obtain N rear film voltage pulse signals, the N rear film voltage pulse signals enter a rear film impact trigger and a rear film collecting electrode charge signal addition amplifier, and in a rear film impact trigger signal circuit, the N rear film voltage pulse signals are subjected to OR operation to obtain rear film impact signals; in the post-film collecting electrode charge signal summing amplifier, summing the amplitudes of N post-film voltage pulse signals to obtain the total charge amount generated by the impact of the front film;
the high-frequency pulse counter is used for measuring the time difference between the front film impact signal and the rear film impact signal and calculating the speed of impacting the tiny fragments;
the total charge from the front film impact, the total charge from the rear film impact and the velocity of the impacting micro-debris were used to calculate the mass of the impacting micro-space debris.
The metal-plated film is a polyimide aluminum-plated film, a polyester aluminum-plated film or a polyethylene silver-plated film.
Film thickness D of the front and rear filmsmGreater than the maximum pit depth p of impingement of the debris in micro-space, the depth p of impingement of the debris in micro-space being calculated by the formula:
Figure BDA0002702352350000031
0≤θ≤θmax
Figure BDA0002702352350000032
wherein d ispMaximum feature size for incident micro space debris, unit: cm, BHThe Brinell hardness of the film material is adopted; ρ is a unit of a gradientpIs the density of the film material, unit: g/cm3；ρtDensity of incident micro space debris in g/cm3；VnIs the incident velocity relative to the film, in units: km/s; c is the material sound velocity, unit: km/s, theta is an included angle between the direction of the incident micro space debris and the normal direction of the plane of the film, L is an effective collecting range of the front collecting electrode (3) or the rear collecting electrode along the arrangement direction, D is an interval between the front film (1) and the rear film (2), and the thickness of the films is smaller than p/2.
The spacing D between the front and rear films, the maximum characteristic dimension D of the cross section of the collecting electrode0Simultaneously, the following conditions are met:
(a) maximum characteristic dimension d of cross section of collecting electrode0Less than D/10;
(b) the distance between the collecting electrode and the film is d, d is satisfied with the electric field formed by the H ions between the front film and the front film collecting electrode or the electric field formed by the rear film and the rear film collecting electrodeThe drift time Ts in the electric field is less than the flight time T between the front and back films of the incident micro space debris f1/10 of (1);
(c)、
Figure BDA0002702352350000041
wherein m isiThe mass of ions in the plasma, e the electron charge, and k is a coefficient generally greater than 10.
The front thin film charge amplifier and the rear thin film charge amplifier have the same structure and respectively comprise an input circuit, a charge amplification feedback circuit, a voltage amplification circuit and an output circuit which are connected in parallel; the front thin film charge amplifier comprises M paths of parallel input circuits and a charge amplification feedback circuit, wherein the M paths of parallel input circuits are used for transmitting charge signals collected by each front collecting electrode to the charge amplification feedback circuit;
the rear thin film charge amplifier comprises N paths of parallel input circuits and is used for transmitting charge signals collected by each rear collecting electrode to the charge amplification feedback circuit;
the charge amplification feedback circuit is used for amplifying the charges and converting the charges into voltage signals;
a voltage amplifying circuit for amplifying the voltage signal;
and an output circuit for outputting the amplified voltage signal.
The parallel input circuit comprises resistors R1 and R2, a filter capacitor C1 and a blocking capacitor C3, one end of a resistor R1 is connected with a negative voltage-Vdc, the other end of a resistor R1 is connected with one ends of the filter capacitor C1 and a resistor R2 in parallel, the other end of the filter capacitor C1 is grounded, the other end of the resistor R2 is connected with one end of the blocking capacitor C3 and a charge signal collected by a front collecting electrode or a rear collecting electrode, and the other end of the blocking capacitor C3 is connected with the input end of a charge amplification feedback circuit.
The charge amplification feedback circuit comprises a field effect transistor Q1, a triode Q2, an operational amplifier U1A, a capacitor C2, a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C8, a capacitor C9, a resistor R4, a resistor R5, a resistor R6, a resistor R8, a resistor R9, a resistor R10 and a resistor R12;
the grid of the field effect transistor Q1 is the input end of the charge amplification feedback circuit, the source of the field effect transistor Q1 is grounded, the drain of the field effect transistor Q1 is connected with the base of the transistor Q2 and the resistor R2, the resistor R2 is connected in series with the resistor R2 to the positive power supply terminal VD 2, the node between the resistor R2 and the resistor R2 is grounded through the capacitors C2 and C2 connected in parallel, the collector of the transistor Q2 is grounded through the capacitor C2, the resistor R2 is connected in series with the resistor R2 to the positive power supply terminal VD 2, the emitter of the transistor Q2 is connected with one end of the resistor R2 and the positive input terminal of the operational amplifier U1 2, the other end of the resistor R2 is grounded, the positive terminal of the operational amplifier U1 2 is connected in parallel with the resistor R2 and the resistor R2, the resistor R2 is grounded, the other end of the resistor R2 is connected with the positive terminal of the operational amplifier U1 and the operational amplifier U2 is grounded through the capacitor C2, the power supply negative end of the operational amplifier U1A is grounded through a capacitor C8, and is connected with the power supply negative end VE1 through a resistor R12, the output end of the operational amplifier U1A is the output end of a charge amplification feedback circuit, and the output end of the operational amplifier U1A is fed back to the grid electrode of the field effect transistor Q1 through the resistor R11 and the capacitor C9 which are connected in parallel;
the voltage amplifying circuit comprises an operational amplifier U2A, a capacitor C10, a resistor R13, a resistor R14 and a resistor R15;
one end of the capacitor C10 is an input end of the voltage amplifying circuit, the other end of the capacitor C10 is connected to the positive input end of the operational amplifier U2A and is grounded through the resistor R14, the output end of the operational amplifier U2A is an output end of the voltage amplifying circuit and is grounded through the resistor R15 and the resistor R13 which are connected in series, and a node between the resistor R15 and the resistor R13 is fed back to the negative input end of the operational amplifier U2A.
The output circuit comprises a resistor R16, a resistor R17, a resistor R18 and a capacitor C11;
the output end of the voltage amplifying circuit is connected with a resistor R16 and a resistor R17 in parallel, the other end of the resistor R16 is grounded, the other end of the resistor R17 is connected with a resistor R18 and a capacitor C11, the capacitor C11 is grounded, and the output end of the resistor R18 is the output end of the output circuit.
The value range of the distance d1 between two adjacent front film collecting electrodes and the distance d2 between two adjacent rear film collecting electrodes is determined by the following formula:
d1＝d2≤D/20
based on the device, the invention also provides an on-orbit micro space debris impact measurement method, which comprises the following steps:
(1) acquiring charge signals collected by M front thin film collecting electrodes and charge signals collected by N rear thin film collecting electrodes;
(2) amplifying the charge signals collected by the M front film collecting electrodes by a front film charge amplifier to obtain M front film voltage pulse signals; amplifying the charge signals collected by the N rear film collecting electrodes by a rear film charge amplifier to obtain N rear film voltage pulse signals;
(3) after performing AND operation on the M front film voltage pulse signals, obtaining a front film impact signal which is a counter starting signal; performing AND operation on the N rear film voltage pulse signals to obtain a rear film impact signal which is a counter stop signal; the time difference T is measured by a counter start signal and a counter stop signalf；
(4) Adding the amplitudes of the M front film voltage pulse signals to obtain the total charge amount generated by the collision of the front films; adding the amplitudes of the N rear film pulse voltage pulse signals to obtain the total charge quantity Q generated by the impact of the rear film;
(5) measuring the time difference between the front film impact signal and the rear film impact signal, and calculating the speed v of impacting the tiny fragments according to the time difference and the interval D between the front film and the rear film;
(6) calculating the mass of the impact tiny fragments according to the total charge quantity Q generated by the impact of the front film and the speed v of the impact tiny fragments, wherein the specific calculation formula is as follows:
Q＝mαvβ
wherein alpha is a mass index and beta is a velocity index, and can be obtained by a ground high-speed particle impact film test, VpThe velocity of the incident micro space debris is measured by time-of-flight method.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention adopts a double-layer metal-plated film and a collecting electrode structure to realize the measurement of the impact time, the charge quantity and the mass of the tiny space debris, and the probe has simple structure, light mass and easy integrated installation.
(2) The invention measures the charge signal generated by the tiny space debris impacting the film, and analyzes to obtain the energy (kinetic energy) of the tiny space debris.
(3) The invention adopts a flight time method, adopts a high-frequency (not less than 50Mhz) pulse counter, takes ion charge signals in plasmas generated by micro fragments penetrating through front and rear films as start and stop signals to obtain a count value of the counter, multiplies the count value by frequency to obtain a time difference, and divides a distance D between the front film and the rear film by the time difference to further obtain the fragment speed.
(4) The invention measures the charge quantity and the mass and the speed of the tiny fragments, and after the speed value is obtained, the mass of the tiny fragments can be calculated.
(5) The invention obtains charge signals by arranging the front and the rear parallel collecting electrodes, analyzes the amplitude difference of the charge signals on the adjacent collecting electrodes, and determines two collecting electrodes which collect multiple charges, thereby determining the one-dimensional position of the film relative to the collecting electrodes, and combining the one-dimensional position information of the front and the rear films to obtain the impact position range and the angle range of the tiny fragments.
(6) The invention adopts a metal-plated film, blocks the influence of external environment light, heat and electromagnetic environment on the probe, and is not easily interfered by external heat and electromagnetic interference.
Drawings
FIG. 1(a) is a schematic view of a PVDF micro-debris probe.
FIG. 1(b) is a schematic diagram of a MOS capacitor tiny debris probe
FIG. 2 is a block diagram of an in-orbit micro space debris impact measurement probe according to an embodiment of the present invention.
FIG. 3(a) is a schematic diagram showing a positional relationship between a front film and a rear film of an in-orbit micro space debris impact measurement probe according to an embodiment of the present invention;
FIG. 3(b) is a cross-sectional view illustrating a positional relationship between a front film and a rear film of an in-orbit micro space debris impact measurement probe according to an embodiment of the present invention;
FIG. 3(c) is a schematic diagram of the structure of the on-orbit micro-space debris impact measurement probe collecting electrode according to the embodiment of the invention.
FIG. 4 is a schematic view of the direction measurement of incident micro-debris implemented in the present invention.
FIG. 5 is a schematic diagram of a charge amplifier according to an embodiment of the invention.
FIG. 6 is a functional diagram of a high frequency counter according to an embodiment of the present invention.
Detailed Description
The invention is further illustrated by the following examples.
Example 1:
the invention provides a multi-parameter micro space debris measuring probe, the structure of which is shown in figure 2 and comprises a front film 1, a rear film 2, 20 front collecting electrodes 3, 20 rear collecting electrodes 4, 20 front collecting electrode charge amplifiers 5, 20 rear collecting electrode charge amplifiers 6, a front film impact trigger 7, a high-frequency pulse counter 8, a front collecting electrode charge signal adding amplifier 9, a rear collecting electrode charge signal adding amplifier 10 and a rear film impact trigger 11 which are arranged in parallel.
In the embodiment, the front film 1 and the rear film 2 of the probe adopt an aluminized polyimide film as an impact carrier, micro fragments in a high-speed space impact the front film 1 and the rear film 2 to generate plasma, ions in the plasma are collected under the action of an electric field between a collecting electrode and the films to form a charge pulse signal on the collecting electrode, a charge amplifier generates a voltage pulse signal, and the amplitude of an output voltage signal is in direct proportion to the charge quantity on the collecting electrode; the impact moment and the charge quantity can be obtained by measuring the voltage pulse signal;
determining the position of a collecting electrode closest to an impact point from the collecting electrode position by using the two paths of voltage signals with the maximum amplitude to obtain the impact point range between the two collecting electrodes (one-dimensional position); the time difference between the voltage signals of the front film and the rear film is measured, the speed of the tiny fragments in the incident space can be obtained, and the incident direction can be obtained according to the positions of the impact points of the front film and the rear film.
First, the specific design of the film
Front thinThe film 1 and the rear film 2 adopt metal-plated organic films (such as polyimide aluminum-plated films, polyester thin aluminum-plated films and polyethylene silver-plated films), the mechanical and thermal properties of the films are stable, and the films can resist high temperature of more than 300 ℃; film thickness Dm. The front film 1 and the back film 2 are the same size and are placed in parallel.
The penetration depth of the micro-space debris impacting the film was analyzed using the ultra-high speed impact equation as follows:
Figure BDA0002702352350000081
wherein: p is the depth of the impact pit (cm) on the target, dpIs the diameter (cm) of incident micro-debris, BHThe Brinell hardness of the film material is adopted; rhopIs the density (g/cm) of the film material3)；ρtIs incident micro space debris density (g/cm)3)；VnIs the incident velocity (km/s) relative to the film; c is the sound velocity of the material (km/s), and theta is the incident direction.
After the tiny space debris penetrate through the film, the collecting electrode can collect charges, and then an impact event is measured; thus film thickness DmShould be greater than p.
Second, design of collecting electrode
The distance between the collecting electrode and the surface of the film is d, the collecting electrode is a metal copper cylinder, and the radius of the metal copper cylinder is at least less than d/10; collecting the voltage between the electrode wire and the film as-U (the film is grounded, and the negative power supply receives the collector); d should satisfy that the drift time of the ions (mainly H, C, Al) in the electric field (U/d) is far less than (< 0.1 times) the flight time T between the front and back films of the incident space tiny debrisf。
The charge collection process of the collecting electrode is shown in fig. 3(c), positive ions are separated from plasma generated by impact under the action of an electric field, the positive ions drift to the collecting electrode under the action of the electric field, a charge signal is generated, and the charge signal is converted into a voltage pulse signal by a charge amplifier.
The ion charge Q of the plasma generated by the impact of the space tiny space debris on the film has the following relationship with the mass and the speed of the debris, and the charge Q and the speed V are measuredpCan obtainThe mass of the space tiny debris is obtained, wherein the charge Q is in direct proportion to the amplitude of the voltage pulse.
Q＝mαVp β
VQ＝AqvQ
Alpha is a mass index and beta is a speed index; can be obtained by a ground high-speed particle impact film test, VpThe velocity of the incident micro space debris is measured by time-of-flight method (see fig. 6).
Thirdly, the key parameter design of the invention
As shown in fig. 3(a) and 3(b), the front film is provided with parallel metal collectors (with a distance d1) at equal intervals (d is a distance from the film plane), and a direct current voltage U (-50V) is applied between the front collecting electrode and the front film for collecting charge signals generated by the impact of tiny debris on the front film. The rear film is equipped with equally spaced (D from the film surface) parallel metal collectors (D2) in front of the film, D being the distance between the front and rear films.
The invention provides key parameters of a multi-parameter micro space debris measuring probe, which comprise the following steps: the distance D between the front film and the rear film, the distance D between the collecting electrode wire and the plane of the film, the distance D1 between the collecting electrode wire and the front film, the distance D2 between the collecting electrode wire and the rear film, and the voltage U (-50V) between the collecting electrode wire and the film; the relationship therebetween satisfies the following expression.
Figure BDA0002702352350000101
d＝d1＝d2≤D/20
Wherein m isiThe mass of ions in the plasma, e, the electron electric quantity, and k, which are coefficients generally larger than 10, are related to the measurement accuracy.
Four, charge amplifier design
The charge amplifier is a Miller integrating circuit composed of a junction field effect transistor, a triode, an operational amplifier and a resistance-capacitance element, and adopts a bootstrap principle to ensure that the open-loop gain of the operational amplifier circuit is more than 2000, the bandwidth is more than 20MHz, and the input impedance is more than 100M omega.
The front thin film charge amplifier 5 and the rear thin film charge amplifier 6 (see fig. 5) operate on the following principle: ions in the plasma are captured and generated by a collecting electrode under the action of an electric field to form charge pulses, and the charge pulses are input into an integrating circuit consisting of amplifiers and input with voltage signals.
As shown in fig. 5, the front thin film charge amplifier 5 and the rear thin film charge amplifier 6 have the same structure, and each of the front thin film charge amplifier and the rear thin film charge amplifier includes an input circuit, a charge amplification feedback circuit, a voltage amplification circuit, and an output circuit connected in parallel; the front thin film charge amplifier 5 comprises M parallel input circuits for transmitting the charge signal collected by each front collecting electrode 3 to the charge amplification feedback circuit;
the rear thin film charge amplifier 6 comprises N parallel input circuits for transmitting the charge signal collected by each rear collecting electrode 4 to the charge amplification feedback circuit;
the charge amplification feedback circuit is used for amplifying the charges and converting the charges into voltage signals;
a voltage amplifying circuit for amplifying the voltage signal;
and an output circuit for outputting the amplified voltage signal.
The parallel input circuit comprises resistors R1 and R2, a filter capacitor C1 and a blocking capacitor C3, one end of a resistor R1 is connected with a negative voltage-Vdc, the other end of a resistor R1 is connected with one ends of the filter capacitor C1 and a resistor R2 in parallel, the other end of the filter capacitor C1 is grounded, the other end of the resistor R2 is connected with one end of a blocking capacitor C3 and a charge signal collected by a front collecting electrode 3 or a rear collecting electrode 4, and the other end of the blocking capacitor C3 is connected with the input end of a charge amplification feedback circuit.
The charge amplification feedback circuit comprises a field effect transistor Q1, a triode Q2, an operational amplifier U1A, a capacitor C2, a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C8, a capacitor C9, a resistor R4, a resistor R5, a resistor R6, a resistor R8, a resistor R9, a resistor R10 and a resistor R12;
the gate of the field-effect transistor Q1 is the input terminal of the charge amplification feedback circuit, the source of the field-effect transistor Q1 is grounded, the drain of the field-effect transistor Q1 is connected to the base of the transistor Q2 and the resistor R2, the resistor R2 in series is connected to the positive power supply terminal VD 2, the node between the resistor R2 and the resistor R2 is grounded through the capacitors C2 and C2 connected in parallel, the collector of the transistor Q2 is grounded through the capacitor C2, the resistor R2 in series is connected to the positive power supply terminal VD 2 through the resistor R2, the emitter of the transistor Q2 is connected to one terminal of the resistor R2 and the positive input terminal of the operational amplifier U1 2, the other terminal of the resistor R2 is grounded, the negative input terminal of the operational amplifier U1 2 is connected in parallel to the resistor R2 and the resistor R2, the resistor R2 is grounded, the other terminal of the resistor R2 is connected to the positive power supply terminal of the operational amplifier U1 and the resistor R2, the resistor VD 4 is connected to the positive power supply terminal of the operational amplifier U1 is connected to the ground, the positive power supply terminal VD 4 of the operational amplifier U1 is connected to the power supply terminal of the operational amplifier U2, the power supply negative end of the operational amplifier U1A is grounded through a capacitor C8, and is connected with the power supply negative end VE1 through a resistor R12, the output end of the operational amplifier U1A is the output end of a charge amplification feedback circuit, and the output end of the operational amplifier U1A is fed back to the grid electrode of the field effect transistor Q1 through the resistor R11 and the capacitor C9 which are connected in parallel;
the voltage amplifying circuit comprises an operational amplifier U2A, a capacitor C10, a resistor R13, a resistor R14 and a resistor R15;
one end of the capacitor C10 is an input end of the voltage amplifying circuit, the other end of the capacitor C10 is connected to the positive input end of the operational amplifier U2A and is grounded through the resistor R14, the output end of the operational amplifier U2A is an output end of the voltage amplifying circuit and is grounded through the resistor R15 and the resistor R13 which are connected in series, and a node between the resistor R15 and the resistor R13 is fed back to the negative input end of the operational amplifier U2A.
The output circuit comprises a resistor R16, a resistor R17, a resistor R18 and a capacitor C11;
the output end of the voltage amplifying circuit is connected with a resistor R16 and a resistor R17 in parallel, the other end of the resistor R16 is grounded, the other end of the resistor R17 is connected with a resistor R18 and a capacitor C11, the capacitor C11 is grounded, and the output end of the resistor R18 is the output end of the output circuit.
Preferably, the front thin film charge amplifier (5) comprises M parallel test input circuits, corresponding to the M parallel input circuits, for simulating M charge inputs. Similarly, the rear thin film charge amplifier (6) includes N parallel test input circuits for simulating N charge inputs. The test input circuit comprises a resistor R3 and a capacitor C4 which are connected in series, a node between the resistor R3 and the capacitor C4 is an input end of the test input circuit, the other end of the resistor R3 is grounded, and the capacitor C4 is connected with the gate of the field effect transistor Q1.
In the charge amplifier, the direct-current voltage is a negative voltage (-Vdc, -50V), the direct-current voltage is connected between the collecting electrode through resistors R1 and R2, the thin film is a ground level (GND), and C1 is a filter capacitor; q _ N is an output charge signal of one of the collecting electrodes, and is input to the grid electrode of the field effect transistor Q1 through a direct current blocking capacitor C3. The resistor R11, the capacitor C9, the field effect transistor Q1, the triode Q2 and the operational amplifier U1A form a charge integrating amplifier, the input charge is integrated on the capacitor C9, and a voltage signal is output; the resistor R4 is a drain load resistor on the field effect transistor Q1; the triode Q2 and the resistor R7 form an emitter follower circuit, and have the function of adjusting the circuit impedance; resistors R5 and R6, capacitors C2 and C5, a resistor R8 and a capacitor C7 are used as a resistance-capacitance filter circuit, a field effect transistor Q1, a triode Q2, an operational amplifier U1A and an operational amplifier U2A are used for supplying positive electricity, and a resistor R12 and a capacitor C8 form a resistance-capacitance filter circuit which is used for supplying negative electricity to the operational amplifier U1A and the operational amplifier U2A; the resistor R9, the resistor R10 voltage division circuit and the same-phase end of the operational amplifier U1A are connected to form a zero point adjusting circuit; the operational amplifier U2A, the resistor R13, the resistor R15 and the resistor R14 form a non-inverting terminal voltage operational amplifier, and the voltage amplification factor is (1+ R15/R13); c10 is a DC blocking capacitor, and the resistors R16, R17, R18 and the capacitor C11 are amplifier output load circuits.
The charge amplifier has a single input charge signal of Q _ N and an output voltage of Q _ N/C9; c9 is nF in general, R11 charge bleed off resistance, R11 is about 10M Ω for a RC circuit time constant of 10 ms; charge voltage amplification factor A in circuitqvComprises the following steps:
Figure BDA0002702352350000121
in one embodiment of the present invention, the input impedance of Q1 in the circuit is greater than 1012Omega, R1 and R2 values of not less than 100M omega are required. TS _ N is a test signal input end used for testing circuit performance, R3 is an impedance matching resistor, and C4 is a blocking capacitor.
The front film collecting electrode filament spacing d1 and the rear film collecting electrode filament spacing d2 are related to the incident angle measurement of the incident micro space debris as shown in fig. 6. The range of incidence angles of the tiny space debris is theta, and the range is related to D1, D2 and D.
The film is positioned between m and (m +1) th collecting electrodes before the impact of the micro space debris, charge signals are generated at the m and m +1 th collecting electrodes, and a voltage signal V is generated after the charge signals are amplifiednAnd Vm+1,From V tomAnd Vm+1A signal that can determine a one-dimensional location of the point of impact between m x d1 and (m +1) x d 1; the position of the film after impact is between the n th and (n +1) th of the collecting electrode, charge signals are collected by the adjacent collecting electrodes n and n +1, and a voltage signal V is generated after amplificationnAnd Vn+1From V tonAnd Vn+1A signal to determine a location of the impact point between n x d1 and (n +1) x d 1; the incidence angle of the micro space debris is:
tan-1((m)d1-(n+1)d2)≤θ≤tan-1((m+1)d1-nd2)
design of pulse counting circuit
The GATE signal of the pulse counting circuit (see fig. 6) is l, allowing counting; the count is stopped for low. The voltage pulse output by the front film collecting electrode is used as an initial signal to change GATE to be high, and counting is started; the voltage pulse output from the rear thin film collecting electrode is used as a stop signal to lower the GATE and end the counting, and the pulse counting circuit outputs a counting value which is divided by the pulse frequency (f) of the high frequency signal source and is a time interval TfIs not only Tf＝n/f。
After the high-frequency pulse counting circuit is initialized, when the initial signal of the counting circuit arrives, the RS trigger
Outputting a high level, wherein the level of the G end of the counter is high, and counting the pulses output by the high-frequency oscillator 13; when the stop signal of the counting circuit arrives, the RS trigger 12 is set to be at a low level, the G end of the counting circuit 14 becomes at a low level, counting is stopped, and the counting circuit keeps a counting value until the data acquisition circuit 15 reads a signal to control reading of the counting value; after reading the count value, the data acquisition circuit 15 generates a reset signal to reset the RS flip-flop and clear the high-frequency pulse count of the counter.
By the time interval TfAnd the distance D between the front and rear films, and the incident angle theta to obtain the velocity V of the micro-debrispIs D/Tfcosθ。
The working principle of the invention is as follows:
ion charges in plasma generated by the film before and after the impact of the micro space debris are collected by the front collecting electrode and the rear collecting electrode, amplified into voltage pulse signals by the front and rear charge amplifiers, and subjected to or operated on M paths of front film voltage pulse signals to obtain a front film impact signal Vt1Starting to count signals for the high-frequency counter; after N paths of rear film voltage pulse signals are subjected to OR operation, a rear film impact signal V is obtainedt2Counting stop signals for the high-frequency counter; measuring pulse counting between a high-frequency counter starting signal and a counter stopping signal to obtain a time difference;
adding the amplitudes of the M paths of front thin film voltage pulse signals, and obtaining the total charge quantity generated by front thin film impact according to the measured voltage amplitude; adding the amplitudes of the rear film pulse voltage pulse signals, and obtaining the total charge quantity generated by the rear film impact according to the measured voltage amplitude;
measuring the time difference between the front film impact signal and the rear film impact signal, and calculating the speed V of the tiny fragments in the impact space according to the distance D and the time difference between the front film and the rear filmp；
According to the total charge quantity generated by the front film impact and the speed V of the impact tiny fragmentspThe mass of the tiny debris in the impact space can be calculated. The specific calculation formula is as follows:
Q＝mαVp β
alpha is a mass index and beta is a speed index; can be obtained by a ground high-speed particle impact film test, VpIs the incident micro space debris velocity.
As shown in FIG. 4, the position of the film before the impact of the tiny space debris is between the m-th and (m +1) -th collecting electrodes, charge signals are generated at the m-th and m + 1-th collecting electrodes, and voltage signals V are generated after the charge signals are amplifiednAnd Vm+1,From V tomAnd Vm+1A signal that can determine a one-dimensional location of the point of impact between m x d1 and (m +1) x d 1; the position of the film after impact is between the n th and (n +1) th of the collecting electrode, charge signals are collected by the adjacent collecting electrodes n and n +1, and a voltage signal V is generated after amplificationnAnd Vn+1From V tonAnd Vn+1A signal to determine a location of the impact point between n x d1 and (n +1) x d 1; the incidence angle of the micro space debris is:
tan-1((m)d1-(n+1)d2)≤θ≤tan-1((m+1)d1-nd2)
example 2:
the front film 1 and the rear film 2 are aluminum plated polyimide films, the thickness refers to the data in table 1, and the film thickness is 10 μm; p is the depth of impact pit (cm) on the target, dpIs the diameter (cm) of incident micro space debris, BHThe Brinell hardness of the film material is adopted; rhopIs the density (g/cm) of the film material3)；ρtIs the density (g/cm) of micro space debris3)；VnIs the incident velocity (km/s) relative to the film; c is the sound velocity of the material is 5.1km/s, and the incident direction theta is 0. The film thickness was 20 μm and the depth of the micro-debris impact pit should be 2 times greater than the film thickness (40 μm), corresponding to the minimum measurable space debris range shown in table 1 below.
TABLE 1 depth of impact pit for micro space debris in polyimide (space debris of aluminum, iron material,. theta.0)
Figure BDA0002702352350000151
The iron micro space debris with the diameter of 10 microns and the length of 9.50km/s generates the ion charge amount on the front film of about 6.3 multiplied by 10-10C; the diameter of the collecting electrode is 0.5mm, the distance D is 5mm, the distance between the collecting electrode and the film is 5mm, the distance D between the front film and the rear film is 20cm, and V ispIs 15km/s, mi(H) Is 1.67X 10-27kg, the incident angle theta is 45 degrees, k is 10 degrees, e is electron charge, U is more than 35V, and 50V (negative voltage) is taken in the design;
Figure BDA0002702352350000152
considering the direction and spatial distribution, the maximum charge of one collector is about 1.1 × 10 of the total charge-10C, the charge amplifier integrating capacitor C19 is 1nf, R11 is 10M Ω, and R13 and R15 are 10k Ω.
Front collecting electrodes 3 (20), numbered from M1 to M20, corresponding to the 20 front collecting electrode charge amplifiers AM1 to AM20, and having output signals VAM1 to VAM 20; output to the flip-flop 7 and the summing amplifier 9; the flip-flop 7 generates a start signal V for the counter 8t1(ii) a The summing amplifier 9 outputs a charge signal Vq1(ii) a The number of the rear collecting electrodes 4 (20) is N1-N20, corresponding to 20 rear collecting electrode charge amplifiers AN 1-AN 20, and output signals are VAN 1-VAN 20; output to the flip-flop 11 and the summing amplifier 10; the flip-flop 11 generates a stop signal V for the counter 8t2(ii) a The summing amplifier 10 outputs a charge signal Vq2。
In FIG. 6, the voltage pulse output by the front thin film collector electrode is used as the start signal to make GATE12 go high and start counting; the voltage pulse output from the rear thin film collecting electrode is used as a stop signal to lower GATE and end counting, and the pulse counting circuit 14 outputs a count value which is divided by the pulse frequency (50Mhz) of the high frequency signal source 13 to obtain a time interval TfFor a 9.50km/s micro space debris normal incidence (θ 45 °), D is 20cm, and T isfApproximately 29.6 mus, count 1487, speed 1.414D/Tf。
The following is a measure of the range of angles of incidence for the small space debris.
tan-1((m)d1-(n+1)d2)≤θ≤tan-1((m+1)d1-nd2)
Vq1The charge amount can be calculated according to the following formula through the data acquisition circuit 15 in fig. 6.
Figure BDA0002702352350000161
By Q ═ mαvβAnd calculating the mass of the tiny space debris.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.

Claims (10)

1. An on-orbit micro space debris impact measuring probe is characterized by comprising a front film (1), a rear film (2), M front film collecting electrodes (3), N rear film collecting electrodes (4), M front film charge amplifiers (5), N rear film charge amplifiers (6), a front film impact trigger (7), a rear film impact trigger (11), a front film collecting electrode charge signal adding amplifier (9), a rear film collecting electrode charge signal adding amplifier (10) and a high-frequency pulse counter (8), wherein M is more than or equal to 10, and N is more than or equal to 10;
the front film (1) is placed facing to the impact direction of the tiny fragments, a metal film is plated on the plane of the front film (1) back to the impact direction of the tiny fragments, equidistant charge collection wires are arranged behind the metal film, negative direct current voltage is applied between the collection wires and the front film (1), and the charge collection wires are used as front collection electrodes (3) and used for collecting charge signals generated when the tiny fragments impact the front film (1);
the rear film (2) and the front film are parallel to each other and keep a certain interval, the plane of the rear film (2) facing to the impact direction of the tiny fragments is plated with a metal film, an equidistant charge collecting wire is arranged in front of the metal film, namely a rear film collecting electrode (4), and negative direct current voltage is applied between the front film collecting electrode (4) and the rear film (2) and is used for collecting charge signals generated when the tiny fragments impact on the rear film (2);
the charge signals collected by the M front film collecting electrodes (3) are respectively amplified by a front film charge amplifier (5) to obtain M front film voltage pulse signals, the M front film voltage pulse signals enter a front film impact trigger (7) and a front film collecting electrode charge signal adding amplifier (9), and in the front film impact trigger (7), the M front film voltage pulse signals are subjected to OR operation to obtain front film impact signals; in a front film collecting electrode charge signal adding amplifier (9), the amplitudes of M voltage pulse signals are added to obtain the total charge quantity generated by front film impact;
the charge signals collected by the N rear collecting electrodes (4) are respectively amplified by a rear film charge amplifier (6) to obtain N rear film voltage pulse signals, the N rear film voltage pulse signals enter a rear film impact trigger (11) and a rear film collecting electrode charge signal adding amplifier (10), and in a rear film impact trigger signal circuit (11), the N rear film voltage pulse signals are subjected to OR operation to obtain rear film impact signals; in the post-film collecting electrode charge signal summing amplifier (10), the amplitudes of N post-film voltage pulse signals are summed to obtain the total charge amount generated by the impact of the front film;
the high-frequency pulse counter (8) is used for measuring the time difference between the front film impact signal and the rear film impact signal and calculating the speed of impacting the tiny fragments;
the total charge from the front film impact, the total charge from the rear film impact and the velocity of the impacting micro space debris are used to calculate the mass of the impacting micro space debris.
2. An in-orbit micro space debris impact measurement probe according to claim 1, wherein the film thickness D of the front film (1) and the rear film (2)mGreater than the maximum pit depth p of impingement of the debris in micro-space, the depth p of impingement of the debris in micro-space being calculated by the formula:
Figure FDA0003503928710000021
0≤θ≤θmax
Figure FDA0003503928710000022
wherein d ispMaximum feature size for incident micro space debris, unit: cm, BHThe Brinell hardness of the film material is adopted; rhopIs the density of the film material, unit: g/cm3；ρtDensity of incident micro space debris in g/cm3；VnIs the incident velocity relative to the film, in units: km/s; c is the material sound velocity, unit: km/s, theta is an included angle between the direction of the incident tiny space debris and the normal direction of the plane of the film, L is an effective collecting range of the front collecting electrode (3) or the rear collecting electrode along the arrangement direction, D is an interval between the front film (1) and the rear film (2), and the thickness of the film is smaller than p/2.
3. An in-orbit micro space debris impact measurement probe according to claim 1, wherein the separation D between the front and rear membranes (1, 2), the maximum characteristic dimension D of the cross section of the collecting electrode0Simultaneously, the following conditions are met:
(a) maximum characteristic dimension d of cross section of collecting electrode0Less than D/10;
(b) the distance between the collecting electrode and the film is d, d is to satisfy that the drift time Ts of H ions in an electric field formed by the front film (1) and the front film collecting electrode (3) or an electric field formed by the rear film (2) and the rear film collecting electrode (3) is less than the flight time T of incident micro space debris between the front film (1) and the rear film (2)f1/10 of (1); (c) a
Figure DA00035039287144917523
Wherein m isiThe mass of ions in the plasma, e the electron charge, and k is a coefficient generally greater than 10.
4. The on-orbit micro space debris impact measurement probe according to claim 1, wherein the front thin film charge amplifier (5) and the rear thin film charge amplifier (6) have the same structure and respectively comprise an input circuit, a charge amplification feedback circuit, a voltage amplification circuit and an output circuit which are connected in parallel; the front thin film charge amplifier (5) comprises M parallel input circuits for transmitting charge signals collected by each front collecting electrode (3) to a charge amplification feedback circuit;
the rear thin film charge amplifier (6) comprises N parallel input circuits and is used for transmitting charge signals collected by each rear collecting electrode (4) to a charge amplification feedback circuit;
the charge amplification feedback circuit is used for amplifying the charges and converting the charges into voltage signals;
a voltage amplifying circuit for amplifying the voltage signal;
and an output circuit for outputting the amplified voltage signal.
5. An on-orbit micro space debris impact measurement probe according to claim 4, wherein the parallel input circuit comprises resistors R1 and R2, a filter capacitor C1 and a blocking capacitor C3, one end of the resistor R1 is connected with a negative voltage-Vdc, the other end of the resistor R1 is connected with one ends of the filter capacitor C1 and the resistor R2 in parallel, the other end of the filter capacitor C1 is grounded, the other end of the resistor R2 is connected with one end of the blocking capacitor C3 and a charge signal collected by the front collecting electrode (3) or the rear collecting electrode (4), and the other end of the blocking capacitor C3 is connected with an input end of the charge amplification feedback circuit.
6. The on-orbit micro space debris impact measurement probe of claim 4, wherein the charge amplification feedback circuit comprises a field effect transistor Q1, a triode Q2, an operational amplifier U1A, a capacitor C2, a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C8, a resistor C9, a resistor R4, a resistor R5, a resistor R6, a resistor R8, a resistor R9, a resistor R10, a resistor R12;
the grid of the field effect transistor Q1 is the input end of the charge amplification feedback circuit, the source of the field effect transistor Q1 is grounded, the drain of the field effect transistor Q1 is connected with the base of the transistor Q2 and the resistor R2, the resistor R2 is connected in series with the resistor R2 to the positive power supply terminal VD 2, the node between the resistor R2 and the resistor R2 is grounded through the capacitors C2 and C2 connected in parallel, the collector of the transistor Q2 is grounded through the capacitor C2, the resistor R2 is connected in series with the resistor R2 to the positive power supply terminal VD 2, the emitter of the transistor Q2 is connected with one end of the resistor R2 and the positive input terminal of the operational amplifier U1 2, the other end of the resistor R2 is grounded, the positive terminal of the operational amplifier U1 2 is connected in parallel with the resistor R2 and the resistor R2, the resistor R2 is grounded, the other end of the resistor R2 is connected with the positive terminal of the operational amplifier U1 and the operational amplifier U2 is grounded through the capacitor C2, the power supply negative terminal of the operational amplifier U1A is grounded through a capacitor C8, and is connected with the power supply negative terminal VE1 through a resistor R12, the output terminal of the operational amplifier U1A is the output terminal of the charge amplification feedback circuit, and the output terminal of the operational amplifier U1A is fed back to the gate of the field effect transistor Q1 through the resistor R11 and the capacitor C9 which are connected in parallel.
7. The on-orbit micro space debris impact measurement probe according to claim 4, wherein the voltage amplifying circuit comprises an operational amplifier U2A, a capacitor C10, a resistor R13, R14 and R15;
one end of the capacitor C10 is an input end of the voltage amplifying circuit, the other end of the capacitor C10 is connected to the positive input end of the operational amplifier U2A and is grounded through the resistor R14, the output end of the operational amplifier U2A is an output end of the voltage amplifying circuit and is grounded through the resistor R15 and the resistor R13 which are connected in series, and a node between the resistor R15 and the resistor R13 is fed back to the negative input end of the operational amplifier U2A.
8. The on-orbit micro space debris impact measurement probe according to claim 4, wherein the output circuit comprises a resistor R16, a resistor R17, a resistor R18 and a capacitor C11;
the output end of the voltage amplifying circuit is connected with a resistor R16 and a resistor R17 in parallel, the other end of the resistor R16 is grounded, the other end of the resistor R17 is connected with a resistor R18 and a capacitor C11, the capacitor C11 is grounded, and the output end of the resistor R18 is the output end of the output circuit.
9. An in-orbit micro space debris impact measurement probe according to claim 1, wherein the distance d1 between two adjacent front film collecting electrodes (3) and the distance d2 between two adjacent rear film collecting electrodes (3) are determined by the following formula:
d1＝d2≤D/20。
10. an in-orbit micro space debris impact measurement method based on the measurement probe of claim 1, which is characterized by comprising the following steps:
(1) acquiring charge signals collected by M front film collecting electrodes (3) and charge signals collected by N rear film collecting electrodes (4);
(2) amplifying the charge signals collected by the M front film collecting electrodes (3) by a front film charge amplifier (5) respectively to obtain M front film voltage pulse signals; amplifying the charge signals collected by the N rear film collecting electrodes (3) by a rear film charge amplifier (6) respectively to obtain N rear film voltage pulse signals;
(3) after carrying out OR operation on the M front film voltage pulse signals, obtaining a front film impact signal which is a counter starting signal; after carrying out OR operation on the N rear film voltage pulse signals, obtaining a rear film impact signal which is a counter stop signal; the time difference T is measured by a counter start signal and a counter stop signalf；
(4) Adding the amplitudes of the M front film voltage pulse signals to obtain the total charge amount generated by the collision of the front films; adding the amplitudes of the N rear film pulse voltage pulse signals to obtain the total charge quantity Q generated by the impact of the rear film;
(5) measuring the time difference between the front film impact signal and the rear film impact signal, and calculating the speed v of impacting the tiny fragments according to the time difference and the interval D between the front film (1) and the rear film (2);
(6) calculating the mass of the impact tiny fragments according to the total charge quantity Q generated by the impact of the front film and the speed v of the impact tiny fragments, wherein the specific calculation formula is as follows:
Q＝mαvβ
wherein alpha isIs a mass index and beta is a velocity index, and can be obtained by a ground high-speed particle impact film test, VpThe velocity of the incident micro space debris is measured by time-of-flight method.
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