CN112304263B - Soldering tin thickness measuring method of semiconductor device - Google Patents

Soldering tin thickness measuring method of semiconductor device Download PDF

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CN112304263B
CN112304263B CN202011134281.1A CN202011134281A CN112304263B CN 112304263 B CN112304263 B CN 112304263B CN 202011134281 A CN202011134281 A CN 202011134281A CN 112304263 B CN112304263 B CN 112304263B
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echo time
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ultrasonic wave
chip
soldering tin
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CN112304263A (en
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刘金龙
黄彩清
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Shenzhen STS Microelectronics Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
    • G01B17/02—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness

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Abstract

The invention discloses a method for measuring the soldering tin thickness of a semiconductor device, which comprises a reference surface determining step, a measuring reference determining step, a first scanning step, a first calculating step and a second calculating step, and can measure the soldering tin thickness of the semiconductor device under the condition of not damaging the semiconductor device.

Description

Soldering tin thickness measuring method of semiconductor device
Technical Field
The invention relates to the field of semiconductor product analysis, in particular to a method for measuring the soldering tin thickness of a device of a semiconductor device.
Background
In the processing process of a semiconductor device, a chip is required to be bonded on a frame through soldering tin, and if the soldering tin thickness of the chip is uneven, the electric conductivity and the heat conduction performance of the chip can be influenced, so when a failure product is subjected to defect analysis, the soldering tin thickness of the semiconductor device needs to be detected.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a method for measuring the soldering tin thickness of a semiconductor device, which can measure the soldering tin thickness of the semiconductor device under the condition of not damaging the semiconductor device.
The invention is realized by adopting the following technical scheme:
a method for measuring the thickness of soldering tin of a semiconductor device comprises the following steps:
a reference surface determining step: selecting a heat dissipation surface of a semiconductor device as a reference surface, and placing the semiconductor device on a platform to be tested of an ultrasonic microscope to enable the reference surface to be opposite to a probe of the ultrasonic microscope;
a measurement reference determining step: selecting one point in four corners of the reference surface as a selected point, controlling the ultrasonic microscope to scan all the selected points, respectively obtaining oscillograms of the selected points, comparing the oscillograms of the selected points, and selecting the selected point corresponding to the oscillogram with the longest distance between two adjacent wave crests in the oscillogram as the reference point;
calculating the echo time T of the ultrasonic wave in the soldering tin at the reference pointSn＝TSb-TSaWherein T isSaEcho time T from the probe to the bonding surface of the soldering tin and the radiating fin at the reference pointSbThe echo time of the ultrasonic wave from the probe to the joint surface of the soldering tin and the chip at the reference point is taken as the echo time; and judging the TSnWhether the time is not less than a preset time threshold T, wherein the preset time threshold T is 2 x 20um/SSn，SSnIs the conduction velocity of ultrasonic waves in the solder of the semiconductor device;
calculating the echo time T of the chipDST: determining echo time T from the probe to the joint surface of the chip and the mold package of the ultrasonic wave at the reference point through the reference point oscillogramDCalculating and obtaining the echo time T of the ultrasonic wave in the soldering tin and the chipSD＝TD-TSaAnd calculating the echo time T of the ultrasonic wave in the chipDST＝TSD-TSn；
A first scanning step: selecting a measuring point on the reference surface, controlling the ultrasonic microscope to scan the measuring point, and obtaining a oscillogram of the measuring point;
a first calculation step: according to the oscillogram of the measuring point, obtaining the echo time T' of the ultrasonic wave from the probe to the joint surface of the chip and the mold sealing body at the measuring pointDAnd echo time T' of ultrasonic wave from probe to joint surface of soldering tin and radiating finSaObtaining the echo time T' of the ultrasonic wave in the soldering tin and the chip at the measuring pointSD＝T`D-T`SaObtaining the echo time T' of the ultrasonic wave in the soldering tin at the measuring pointSn＝T`SD-TDST；
A second calculation step: calculating the thickness H of the soldering tin at the measuring point to be 0.5SSn*T`SnIn which S isSnIs the conduction velocity of the ultrasonic wave in the solder of the semiconductor device.
Further, in the step of determining the reference point, the ultrasonic microscope is controlled to scan all the selected points, the oscillograms of all the selected points are compared, and the selected point corresponding to the oscillogram with the longest distance between two adjacent wave crests in the oscillogram is selected as the reference point;
partially focusing the selected waveform pattern to obtain the ultrasonic wave at the reference pointEcho time from probe to joint surface of soldering tin and radiating fin
Figure GDA0003390804930000031
Echo time T' of ultrasonic wave from probe to joint surface of soldering tin and chipSb；
Calculating the echo time of the ultrasonic wave in the soldering tin at the reference point
Figure GDA0003390804930000032
Calculating the echo time T of the chipDST: partially focusing the waveform diagram of the reference point to acquire the echo time of the ultrasonic wave at the reference point from the probe to the joint surface of the soldering tin and the radiating fin
Figure GDA0003390804930000033
And echo time T from the probe to the joint surface of the chip and the mold packageDCalculating and obtaining the echo time of the ultrasonic wave in the soldering tin and the chip
Figure GDA0003390804930000034
And calculating the echo time T of the ultrasonic wave in the chipDST＝TSD-TSn。
Further, in the first calculation step, partial focusing of the oscillogram at the measurement point is required to obtain the echo time T' of the ultrasonic wave from the probe to the junction surface of the chip and the mold package at the measurement pointDAnd echo time T' of ultrasonic wave from probe to joint surface of soldering tin and radiating finSa。
Further, the probe of the ultrasonic microscope is a 75MHZ probe.
Compared with the prior art, the invention has the beneficial effects that:
the echo time T of the chip is calculated by combining an ultrasonic microscope with a calculation formula of a measurement reference determination stepDSTThen, the echo time of the soldering tin at the measuring point is obtained through the first calculation step, and the thickness of the soldering tin at the measuring point is calculated by combining the thickness formula of the soldering tin, so that the operation steps are simplified, and the great saving is realizedThe time for testing and analyzing is shortened, the measuring point can be selected at will, and the semiconductor device can still continue to be subjected to other parameter analysis after being detected; meanwhile, a plurality of reference points are selected at the corners of the semiconductor device to obtain the position with the maximum thickness of the semiconductor device, and the position is used as the reference point to improve the calculation accuracy.
Drawings
FIG. 1 is a flow chart of a method for measuring solder thickness of a semiconductor device according to the present invention;
FIG. 2 is a diagram illustrating a state of a product during testing according to a method for measuring solder thickness of a semiconductor device of the present invention;
FIG. 3 is a top view of a semiconductor device under test using a solder thickness measurement method according to the present invention;
FIG. 4 is a waveform diagram of a method for measuring solder thickness of a semiconductor device according to the present invention when testing a selected point 1;
FIG. 5 is a waveform diagram of a method for measuring solder thickness of a semiconductor device according to the present invention when testing the selected point 2;
FIG. 6 is a waveform diagram of a method for measuring solder thickness of a semiconductor device according to the present invention when testing a selected point 3;
FIG. 7 is a waveform diagram of a method for measuring solder thickness of a semiconductor device according to the present invention when testing a selected point 4;
FIG. 8 is a waveform diagram of a peak a and a peak b in a waveform diagram of a reference point focused by a method for measuring solder thickness of a semiconductor device according to the present invention;
FIG. 9 is an enlarged view of the peak a of the waveform of FIG. 8;
FIG. 10 is an enlarged view of the peak b of the waveform of FIG. 8;
FIG. 11 is a waveform diagram of a peak a and a peak c in a waveform diagram of a reference point focused by a method for measuring solder thickness of a semiconductor device according to the present invention;
FIG. 12 is an enlarged view of peak a of FIG. 11;
FIG. 13 is an enlarged view of peak c of FIG. 11;
FIG. 14 is a waveform diagram of focusing of a peak a and a peak c during a point x test according to the method for measuring solder thickness of a semiconductor device of the present invention;
FIG. 15 is an enlarged view of peak a of FIG. 14;
fig. 16 is an enlarged view of the peak c in fig. 14.
The figure is as follows: 1. a reference determination step; 2. a first scanning step; 3. a first calculation step; 4. a second calculation step; 20. a semiconductor device; 201. a chip; 2011. a reference plane; 2012. a reference point; 202. soldering tin; 203. a heat sink; 30. a probe.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
A method for measuring a solder thickness of a semiconductor device as shown in fig. 1 to 3, comprising the steps of:
reference surface 2011 determination step: selecting the upper end surface of a heat sink of a semiconductor device 20 as a reference surface 2011, and placing the semiconductor device 20 on an operating platform of an ultrasonic microscope, so that the reference surface 2011 is opposite to a probe 30 of the ultrasonic microscope; because the ultrasonic microscope mainly utilizes the principle that the signal feedback time of ultrasonic waves between different interfaces is different to measure the target object, the ultrasonic microscope can collect related feedback signals to measure and calculate the relative distance of the target object, and further achieve the purpose of measuring the thickness of each structural layer in the semiconductor device 20 to be detected.
For a semi-molded semiconductor device, the side of the chip facing upwards is generally defined as the front side, and the other side is defined as the back side, and since the attenuation of the ultrasonic wave in the mold is much greater than that in the metal, the conduction of the ultrasonic wave in the metal is more stable, and the back side of the semi-molded semiconductor device is generally metal, the reference surface 2011 in this application is selected from the back side of the semiconductor device 20. Of course, for a fully molded semiconductor device, the thickness of the mold package on the back side is also obviously smaller than that of the mold package on the front side, and the back side is preferably selected for measurement during measurement.
Preferably, the probe 30 of the ultrasonic microscope in the present application is 75MHZ, and the selection of the probe mainly depends on the metal frame, solder, and the overall thickness of the chip (including the back mold package body for the fully molded semiconductor device) of the semiconductor device to be tested, so as to ensure that the probe has a good penetrating effect.
Measurement reference determination step 1: selecting a reference point 2012 on a reference surface 2011, wherein the thickness of the solder 202 in the semiconductor device 20 is not uniform, and the thickest part and the thinnest part of the solder 202 will appear at the corner of the semiconductor device 20, that is, the corner of the reference surface 2011, so that in the present application, one point is selected as a selected point from four corners of the reference surface 2011, controlling the ultrasonic microscope to scan all the selected points, respectively obtaining a waveform diagram of each selected point, comparing the waveform diagrams of each selected point, selecting a selected point corresponding to a waveform diagram with two adjacent wave crests having the longest distance in the waveform diagram as the reference point 2012 (two wave crests are echo wave crests on the upper and lower surfaces of the solder), determining in a manner of focusing the obtained waveform diagram, and selecting a selected point corresponding to a waveform diagram with two adjacent wave crests having the longest distance in the waveform diagram as the reference point 2012, the reason is that the solder thickness of the datum point is the thickest, the measurement accuracy of the ultrasonic detection is related to the thickness of the measured object, and the measurement accuracy is increased along with the increase of the thickness of the measured object, so the point with the thickest solder thickness is selected as the datum point, the accuracy is the highest, and other points can be selected, as long as the solder ultrasonic echo time T of the point is the highestsnThe time difference of ultrasonic echo from the probe to the upper surface and the lower surface of the soldering tin is not less than 20 ns;
calculate the echo time T of the ultrasonic wave in the solder 202 at the reference point 2012Sn＝TSb-TSaI.e. the echo time of the ultrasonic wave from the bonding surface of the solder and the heat sink to the bonding surface of the solder and the chip, where TSaThe echo time T of the ultrasonic wave from the probe to the joint surface of the solder 202 and the radiating fin 203 at 2012 is taken as a reference pointSbThe ultrasonic wave is transmitted from the probe to the solder 202 at the reference point 2012 and is connected with the chip 201Echo time of the resultant; and judging TSnWhether the preset time threshold T is not less than the preset time threshold T, and the preset time threshold T is 2 x 20um/SSn，SSnIs the conduction velocity of the ultrasonic waves in the solder 202 of the semiconductor device 20;
calculating the echo time T of the chip 201DST: determining echo time T of ultrasonic wave from the probe to the joint surface of the chip 201 and the mold package at the reference point 2012 by the reference point 2012 oscillogramDCalculating and obtaining the echo time T of the ultrasonic wave in the soldering tin 202 and the chip 201SD＝TD-TSaThat is, the echo time of the ultrasonic wave from the bonding surface of the chip and the mold package to the bonding surface of the solder and the heat sink is calculated, and the echo time T of the ultrasonic wave in the chip 201 is calculatedDST＝TSD-TSnThat is, the echo time of the ultrasonic wave from the bonding surface of the chip and the mold package to the bonding surface of the chip and the solder.
Specifically, in the step of determining the reference point 2012, the ultrasonic microscope is controlled to scan all the selected points, and the oscillograms of the selected points are compared, as shown in fig. 4 to 7, the selected point corresponding to the oscillogram with the longest distance between two adjacent wave crests in the oscillogram is selected as the reference point 2012, and the selected point corresponding to the oscillogram in fig. 5 is selected as the reference point 2012 in the present application;
partially focusing the selected waveform to obtain the echo time of the ultrasonic wave from the probe to the joint surface of the solder 202 and the heat sink 203 at the reference point 2012
Figure GDA0003390804930000071
Echo time T' of ultrasonic wave from probe to joint surface of soldering tin 202 and chip 201Sb＝8.0115ns；
Calculating the solder ultrasonic echo time of the reference point 2012
Figure GDA0003390804930000072
Calculating the echo time T of the chip 201DST: the echo time of the ultrasonic wave at the reference point 2012 from the probe to the joint surface of the soldering tin 202 and the cooling fin 203 is obtained by partially focusing the waveform diagram of the reference point 2012
Figure GDA0003390804930000073
And echo time T from the probe to the joint surface of the chip 201 and the mold packageDThe echo time to obtain the total thickness of solder 202 and chip 201 is calculated as 6.1828ns
Figure GDA0003390804930000074
Figure GDA0003390804930000075
That is, the echo time of the ultrasonic wave from the bonding surface of the solder and the heat sink to the bonding surface of the chip and the mold package is calculated, and the echo time T of the ultrasonic wave in the chip 201 is calculatedDST＝TSD-TSn0.1393-0.0615-0.0778 ns, which is the echo time of the ultrasonic wave from the chip and solder joint to the chip and sealing body joint.
In the above steps, the user needs to focus the peak at point a and the peak at point b in the oscillogram to obtain the peak at point a and the peak at point b
Figure GDA0003390804930000076
And T' is providedSbThe two peaks can be found by focusing, as shown in fig. 8, one peak is a, the other peak is b, and the echo time point corresponding to the peak at the point a after focusing is
Figure GDA0003390804930000077
The echo time point corresponding to the peak at the point b is TSbFIG. 9 and FIG. 10 are echo time
Figure GDA0003390804930000078
And echo time T'SbThe corresponding local method diagram is that two peak points in the diagram of fig. 8 are continuously amplified into a line, and then a specific time parameter is read; in addition, the user needs to focus the peak at point a and the peak at point c in the waveform diagram to obtain TDAnd
Figure GDA0003390804930000079
when it is accurateIn between, we can find two peaks by focusing, as shown in fig. 11, where one peak is a, the other peak is c, and the echo time point corresponding to the peak at point a is
Figure GDA00033908049300000710
The echo time point corresponding to the peak of the c point is TDFIG. 12 and FIG. 13 show echo time
Figure GDA00033908049300000711
And echo time TSDThe corresponding local method diagram is to continuously amplify two peak points in fig. 11 into a line, and then read a specific time parameter.
In addition, in the oscillogram, the energy of the b-point wave peak is weaker, and the energy of the c-point wave peak is too strong, so that errors are avoided during focusing, and therefore the values of the b-point wave peak and the c-point wave peak in the oscillogram are not taken at the same time in the application.
A first scanning step 2: selecting a measuring point, namely a point X, on the reference surface 2011, and controlling the ultrasonic microscope to scan the measuring point to obtain a waveform diagram of the measuring point;
first calculation step 3: obtaining the echo time T' of the ultrasonic wave from the probe to the joint surface of the chip 201 and the mold sealing body at the measuring point according to the oscillogram at the measuring pointDAnd echo time T' of ultrasonic wave from the probe to the bonding surface of the solder 202 and the cooling fin 203SaObtaining the echo time T' from the joint surface of the soldering tin and the radiator at the measuring point to the joint surface of the chip 201 and the mold sealSD＝T`D-T`SaThe echo time T' of the ultrasonic wave in the solder 202 at the measuring point is acquiredSn＝T`SD-TDST。
In the above step, it is necessary to focus the waveform of the measuring point X, the focused waveform is shown in FIG. 14, and then the peak a and the peak c in FIG. 15 are amplified to obtain T ″SaAnd T' partDFor the precise time of (a), the enlarged view of the peaks a and c can be seen in fig. 15 and 16.
A second calculation step 4 of subtracting the echo time of the wave crest a from the echo time of the wave crest c of the measurement point to obtain the echo time of the ultrasonic part of the real measurement point in the soldering tinAnd on-chip echo time, the formula is as follows: t' deviceSD＝T`D-T`Sa(the echo time of the measured a point is T-SaActually measuring, wherein the echo time of the point c is as follows: t' deviceDActually measuring the echo time of the ultrasonic wave in the soldering tin and the chip: t' deviceSD)T`SD＝5.9265-5.8145＝0.112ns。
The echo time of the measured solder and chip thickness minus the echo time of the standard chip thickness is multiplied by 0.5 times the sound velocity to obtain the solder thickness to the measured point, and the formula is as follows:
H(solder thickness)um＝0.5SSn[T`SD-TDST]
H(solderthickness)um＝0.5x2.085x(0.112-0.0778)＝34.2um
and (3) experimental result verification: the solder thickness measured after using conventional grinding was 34.01 um.
If a plurality of measurement points need to be detected, after the echo time of the chip 201 is measured, the first scanning step 2 and the first calculating step 3 are repeated for the new measurement point, so that the solder thickness of the new measurement point can be obtained.
The echo time T of the chip is calculated by combining an ultrasonic microscope with a calculation formula of a measurement reference determination stepDSTThen, the solder echo time of the measuring point is obtained through the first calculation step, and the solder thickness of the measuring point is calculated by combining a solder thickness formula, so that the operation steps are simplified, the time for test analysis is greatly saved, the measuring point can be selected at will, and the semiconductor device can still continue to perform other parameter analysis after being detected; meanwhile, a plurality of reference points are selected at the corners of the semiconductor device to obtain the position with the maximum thickness of the semiconductor device, and the position is used as the reference point to improve the calculation accuracy.
In the present application, the back surface of the semiconductor device 20 is set to the reference surface 2011, and the conduction velocity S of the ultrasonic wave in the solder 202 of the semiconductor device 20 is setSn＝2.085μm/ns。
In addition, the four measuring points are arranged at the corner of the semiconductor device 20 in the present application, so that the user can judge the thickest end and the thinnest end of the semiconductor device, and the inclination degree of the heat sink 203 soldered on the chip 201 can be calculated by calculating the thickness of the solder 202 at the two measuring points.
In addition, the accuracy of ultrasonic measurement is proportional to the thickness of the measured object, and the echo time T isSnWhen the thickness of the solder 202 is greater than or equal to 0.02 μ s, the measurement accuracy of the ultrasonic microscope can be expected, such as the echo time T of the thickness of the solder 202 of each datum point 2012 on the semiconductor device 20 to be testedSnIf the calculated echo time error of the thickness of the chip 201 is less than 0.02 μ s, the calculated echo time error of the thickness of the chip 201 is large, and the determination of the thickness of the solder 202 is affected.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.

Claims (4)

1. A method for measuring the thickness of soldering tin of a semiconductor device is characterized by comprising the following steps:
a reference surface determining step: selecting a radiating fin of a semiconductor device as a reference surface, and placing the semiconductor device on an operating platform of an ultrasonic microscope to enable the reference surface to be opposite to a probe of the ultrasonic microscope;
a measurement reference determining step: selecting one point in four corners of the reference surface as a selected point, controlling the ultrasonic microscope to scan all the selected points, respectively obtaining oscillograms of the selected points, comparing the oscillograms of the selected points, and selecting the selected point corresponding to the oscillogram with the longest distance between two adjacent wave crests in the oscillogram as the reference point;
calculating echo time T of the ultrasonic wave of the reference point in the soldering tinSn＝TSb-TSaWherein T isSaIs the echo time T of the ultrasonic wave from the probe to the joint surface of the soldering tin and the radiating fin at the reference pointSbThe echo time of the ultrasonic wave from the probe to the joint surface of the soldering tin and the chip at the reference point is taken as the echo time; and judging the TSnWhether or not it is not less than a preset time threshold T, saidThe preset time threshold value T is 2 x 20um/SSn，SSnIs the conduction velocity of ultrasonic waves in the solder of the semiconductor device;
calculating the echo time T of the chipDST: determining echo time T from the probe to the joint surface of the chip and the mold package of the ultrasonic wave at the reference point through the reference point oscillogramDCalculating and obtaining the echo time T of the ultrasonic wave in the soldering tin and the chipSD＝TD-TSaAnd calculating the echo time T of the ultrasonic wave in the chipDST＝TSD-TSn；
A first scanning step: selecting a measuring point on the reference surface, controlling the ultrasonic microscope to scan the measuring point, and obtaining a oscillogram of the measuring point;
a first calculation step: according to the oscillogram of the measuring point, obtaining the echo time T' of the ultrasonic wave from the probe to the joint surface of the chip and the mold sealing body at the measuring pointDAnd echo time T' of ultrasonic wave from probe to joint surface of soldering tin and radiating finSaObtaining the echo time T' of the ultrasonic wave in the soldering tin and the chip at the measuring pointSD＝T`D-T`SaObtaining the echo time T' of the ultrasonic wave of the measuring point in the soldering tinSn＝T`SD-TDST；
A second calculation step: calculating the thickness H of the soldering tin at the measuring point to be 0.5SSn*T`SnIn which S isSnIs the conduction velocity of the ultrasonic wave in the solder of the semiconductor device.
2. The method according to claim 1, wherein in the reference point determining step, the ultrasonic microscope is controlled to scan all the selected points, the oscillograms of the selected points are compared, and the selected point corresponding to the oscillogram having the longest distance between two adjacent peaks in the oscillograms is selected as the reference point;
partially focusing the selected oscillogram to obtain the echo time of the ultrasonic wave from the probe to the joint surface of the soldering tin and the radiating fin at the reference point
Figure FDA0003390804920000021
Ultrasonic waveEcho time T 'from probe to bonding surface of soldering tin and chip'Sb；
Calculating the echo time of the ultrasonic wave in the soldering tin at the reference point
Figure FDA0003390804920000022
Calculating the echo time T of the chipDST: partially focusing the waveform diagram of the reference point to acquire the echo time of the ultrasonic wave from the probe to the joint surface of the soldering tin and the radiating fin at the reference point
Figure FDA0003390804920000023
And echo time T from the probe to the joint surface of the chip and the mold packageDCalculating and obtaining the echo time of the ultrasonic wave in the soldering tin and the chip
Figure FDA0003390804920000024
And calculating the echo time T of the ultrasonic wave on the chipDST＝TSD-TSn。
3. A method of measuring a solder thickness of a semiconductor device according to claim 1, wherein: in the first calculation step, partial focusing of the oscillogram at the measurement point is required to obtain the echo time T' of the ultrasonic wave from the probe to the junction surface of the chip and the mold package at the measurement pointDAnd echo time T' of ultrasonic wave from probe to joint surface of soldering tin and radiating finSa。
4. A method of measuring a solder thickness of a semiconductor device according to claim 1, wherein: the probe of the ultrasonic microscope adopts a 75MHZ probe.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008047971A (en) * 2006-08-10 2008-02-28 Hitachi Ltd Array-type ultrasonic probe and flaw detecting device
CN101493436A (en) * 2007-12-26 2009-07-29 松下电器产业株式会社 Ultrasonic measuring method, electronic component manufacturing method, and semiconductor package
CN107449379A (en) * 2017-08-14 2017-12-08 北京智芯微电子科技有限公司 Non-destructive measuring method for SIM card chip
CN108362238A (en) * 2018-03-16 2018-08-03 苏州易昇光学材料有限公司 A kind of detection device for solar panels coating
CN110954034A (en) * 2019-12-12 2020-04-03 深圳赛意法微电子有限公司 Method for measuring wire arc height of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008047971A (en) * 2006-08-10 2008-02-28 Hitachi Ltd Array-type ultrasonic probe and flaw detecting device
CN101493436A (en) * 2007-12-26 2009-07-29 松下电器产业株式会社 Ultrasonic measuring method, electronic component manufacturing method, and semiconductor package
CN107449379A (en) * 2017-08-14 2017-12-08 北京智芯微电子科技有限公司 Non-destructive measuring method for SIM card chip
CN108362238A (en) * 2018-03-16 2018-08-03 苏州易昇光学材料有限公司 A kind of detection device for solar panels coating
CN110954034A (en) * 2019-12-12 2020-04-03 深圳赛意法微电子有限公司 Method for measuring wire arc height of semiconductor device

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