CN112301348A - Etching solution composition for metal wire layer and application thereof - Google Patents

Etching solution composition for metal wire layer and application thereof Download PDF

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Publication number
CN112301348A
CN112301348A CN202011110158.6A CN202011110158A CN112301348A CN 112301348 A CN112301348 A CN 112301348A CN 202011110158 A CN202011110158 A CN 202011110158A CN 112301348 A CN112301348 A CN 112301348A
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acid
etching solution
solution composition
metal wire
compound
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刘净
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

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  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

The application discloses an etching solution composition for a metal wire layer, which comprises hydrogen peroxide, azoles, fluorine-containing compounds, alcohol amine compounds, inorganic acid, organic acid or acid salt thereof, a surfactant and water. The application also discloses an application of the etching liquid composition of the metal wire layer in an array substrate. The etching liquid composition is used for wet etching the metal wire layer in the array substrate and the oxide active layer arranged below the metal wire at one time, successfully reduces the traditional two wet etching processes into one wet etching process, greatly saves the investment cost of a machine table and etching liquid, and improves the production beat and efficiency of panel manufacturing.

Description

Etching solution composition for metal wire layer and application thereof
Technical Field
The application relates to the technical field of etching processes, in particular to the technical field of etching solution, and specifically relates to an etching solution composition for a metal wire layer and application thereof in etching of an array substrate.
Background
The process of forming metal wiring on a semiconductor array substrate generally includes: a sputtering (Sputter) film forming process, a photoresist or photoresist coating and developing process, a wet etching process for forming metal wiring, and a photoresist or photoresist stripping process for removing unnecessary photoresist or photoresist after patterning metal wiring.
Compared with amorphous silicon, the oxide material has higher electron mobility, so that the oxide material is used as an active layer material of an array substrate.
The application provides a metal wire layer in can once only wet etching array substrate simultaneously and the etching solution composition of the metal wire layer of arranging the oxide active layer below the metal wire, reduces traditional two wet etching processes into a wet etching, has saved board and etching solution input cost greatly, has improved the takt and the efficiency of panel manufacturing.
Disclosure of Invention
The application provides an etchant composition of metal wire layer, and the etchant of etching metal wire and oxide semiconductor layer simultaneously reduces traditional twice wet etching process into a wet etching, has saved board and etchant input cost greatly, has improved the takt and the efficiency of panel manufacturing.
The embodiment of the application provides an etching solution composition for a metal wire layer, which comprises: hydrogen peroxide, azoles, fluorine-containing compounds, alcohol amine compounds, inorganic acids, organic acids or acid salts thereof, surfactants and water.
In some embodiments, the composition of the etching solution composition for the metal wire layer comprises, in weight percent: 15-25 wt% of hydrogen peroxide, 0.1-6 wt% of azole compound, 0.001-0.2 wt% of fluorine-containing compound, 0.1-3 wt% of alcohol amine compound, 0.1-5 wt% of inorganic acid, 0.1-5 wt% of organic acid or acid salt thereof, 0.1-3 wt% of surfactant and the balance of water.
In some embodiments, the azole compound is a tetrazole-based compound.
In some embodiments, the tetrazole-based compound is one or more of aminotetrazole, methyltetrazole, phenyltetrazole, 5-amino-1H-tetrazole, 1, 5-pentamethylenetetrazole, 1H-tetrazole, 5-methyl-1H-tetrazole, and 5-phenyl-1H-tetrazole.
In some embodiments, the fluorine-containing compound is one or more of sodium fluoride, potassium fluoride, aluminum fluoride, borofluoric acid, ammonium fluoride, ammonium bifluoride, sodium hydrogen fluoride, potassium bifluoride, ammonium fluoroborate, and hafnium fluoride.
In some embodiments, the alkanolamine compound is a compound having an amino group and an alcohol group.
In some embodiments, the alkanolamine compound is one or more of methanolamine, ethanolamine, propanolamine, butanolamine, diethanolamine, triethylamine, dimethylethanolamine, N-methylethanolamine, and triethanolamine. The alcohol amine compound can not only keep the stable etching rate of the etching solution, but also stabilize hydrogen peroxide in the etching solution.
In some embodiments, the inorganic acid is one or more of phosphoric acid, sulfuric acid, nitric acid, hydrochloric acid, and carbonic acid.
In some embodiments, the organic acid is an amino-containing organic acid.
In some embodiments, the organic acid is one or more of alanine, aminobutyric acid, glutamic acid, iminodiacetic acid, nitrilotriacetic acid, succinic acid, succinimide, iminodiacetic acid, iminodisuccinic acid. The organic acid not only can provide the pH required by the etching solution, but also can be used as a metal ion chelating agent to complex metal ions in the etching solution and inhibit the decomposition of hydrogen peroxide in the etching solution.
In some embodiments, the acid salt is a compound formed after the reaction of an organic acid and a base solution.
In some embodiments, the acid salt is one or more of a sodium salt, a potassium salt, and an ammonium salt.
In some embodiments, the surfactant is an alcohol. The alcohol substance is one or more of methanol, ethanol, polyethylene glycol, diethylene glycol, 1, 2-propylene glycol and 1, 3-propylene glycol.
The embodiment of the application provides an application of the etching solution composition for the metal wire layer in an array substrate, and the etching solution composition for the metal wire layer can simultaneously wet etch the metal wire layer in the array substrate and an oxide active layer arranged below the metal wire at one time to obtain a pattern.
In some embodiments, the metal wire layer is copper or a multi-layer metal structure comprising primarily copper.
In some embodiments, the copper-containing multilayer metal structure is a bilayer structure of Cu/Mo or a Cu/Mo alloy.
In some embodiments, the copper-containing multilayer metal structure is a three-layer structure of Mo/Cu/Mo or Mo alloy/Cu/Mo alloy.
In some embodiments, the oxide active layer is an active layer containing indium, gallium, zinc, and oxygen.
The embodiment of the application also provides a manufacturing process for preparing an array substrate by using the etching solution composition for the metal wire layer, which comprises the following steps:
forming a grid electrode layer on a glass substrate, and then forming a grid electrode insulating layer, an oxide active layer, a source drain electrode layer and an insulating layer; and
and wet-etching the oxide active layer and the source drain layer by adopting the etching solution composition of the metal wire layer in one step to pattern the oxide active layer and the source drain layer.
In some embodiments, the oxide active layer is a compound containing indium, gallium, zinc, and oxygen; the source drain electrode layer is of a copper-containing multilayer metal structure, and is of a double-layer structure of Cu/Mo or Cu/Mo alloy or a three-layer structure of Mo/Cu/Mo or Mo alloy/Cu/Mo alloy.
In the preparation process of the array substrate, the gate layer, the gate insulating layer, the oxide active layer, the source drain layer and the insulating layer can be obtained by a conventional method in the field.
In the preparation process of the array substrate, the step of wet-etching the oxide active layer and the source drain layer by using the etching solution composition of the metal wire layer in one step can be realized by selecting conventional steps in the field according to actual conditions.
The raw materials used in the present invention may be commercially available products unless otherwise specified.
The beneficial effect of this application lies in:
the application provides an etchant composition on metal wire layer etches metal wire and oxide semiconductor layer simultaneously, can wet the metal wire layer among the etching array substrate once and arrange the oxide active layer of metal wire below in, successfully reduce two wet etching processes of tradition into a wet etching, saved board and etchant input cost greatly, improved the takt and the efficiency that the panel was made.
The main components of the etching solution composition for the metal wire layer comprise hydrogen peroxide, azoles, fluorine-containing compounds, alcohol amine compounds, inorganic acid, organic acid or acid salt thereof, surfactant and water, and the components cooperate with each other to enable the etching solution composition for the metal wire layer to simultaneously etch the metal wire and the oxide semiconductor layer; the added alcohol amine compound can not only keep the stable etching rate of the etching solution, but also stabilize the oxidant hydrogen peroxide in the etching solution, and enhance the etching effect of the etching solution composition of the metal wire layer; the added organic acid can not only provide the pH required by the etching solution, but also be used as a metal ion chelating agent to complex metal ions in the etching solution, inhibit the decomposition of oxidant hydrogen peroxide in the etching solution and further enhance the etching effect of the etching solution composition for the metal wire layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is to be noted that the term "comprising" is used herein to mean "including but not limited to". Various embodiments of the invention may exist in a range of versions; it is to be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as an inflexible limitation on the scope of the invention; accordingly, the described range descriptions should be considered to have specifically disclosed all the possible sub-ranges as well as individual numerical values within that range. For example, it is contemplated that the description of a range from 1 to 6 has specifically disclosed sub-ranges such as, for example, from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as individual numbers within a range such as, for example, 1,2, 3, 4, 5, and 6, as applicable regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any number (fractional or integer) recited within the indicated range. The sizes and values disclosed herein are not to be understood as being strictly limited to the exact numerical values recited. Conversely, unless otherwise indicated, various sizes are intended to indicate the recited value and the range functionally equivalent to the recited value. For example, a disclosed size of "10 microns" refers to "about 10 microns".
The embodiment of the application provides an etching solution composition for a metal wire layer, which mainly comprises the following components: hydrogen peroxide, azoles, fluorine-containing compounds, alcohol amine compounds, inorganic acids, organic acids or acid salts thereof, surfactants and water.
In some embodiments, the hydrogen peroxide is 15-25% by weight of the etchant composition. For example, the hydrogen peroxide may be 15%, 16%, 18%, 19%, 20%, 22%, 23%, 25%.
In some embodiments, the azole compound is 0.1 to 6% by weight of the etchant composition. For example, the azole compound may be 0.1%, 0.5%, 0.8%, 1%, 2%, 3%, 4%, 5%, 6%.
In some embodiments, the fluorine-containing compound is 0.001 to 0.2% by weight of the etching solution composition. For example, the fluorine-containing compound may be 0.001%, 0.01%, 0.05%, 0.1%, 0.2%.
In some embodiments, the alcohol amine compound is 0.1-3% by weight of the etching solution composition. For example, the alcamines may be 0.1%, 0.5%, 0.8%, 1%, 2%, 2.5%, 3%.
In some embodiments, the inorganic acid is 0.1 to 5% by weight of the etching solution composition. For example, the inorganic acid may be 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%.
In some embodiments, the organic acid or acid salt thereof is 0.1 to 5% by weight of the etching solution composition. For example, the organic acid or acid salt thereof may be 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%.
In some embodiments, the surfactant is 0.1-3% by weight of the etchant composition. For example, the surfactant may be 0.1%, 0.5%, 0.8%, 1%, 2%, 2.5%, 3%.
In some embodiments, the azole compound is a tetrazole-based compound.
In some embodiments, the tetrazole-based compound is one or more of aminotetrazole, methyltetrazole, phenyltetrazole, 5-amino-1H-tetrazole, 1, 5-pentamethylenetetrazole, 1H-tetrazole, 5-methyl-1H-tetrazole, and 5-phenyl-1H-tetrazole.
In some embodiments, the fluorine-containing compound is one or more of sodium fluoride, potassium fluoride, aluminum fluoride, borofluoric acid, ammonium fluoride, ammonium bifluoride, sodium hydrogen fluoride, potassium bifluoride, ammonium fluoroborate, and hafnium fluoride.
In some embodiments, the alkanolamine compound is a compound having an amino group and an alcohol group. For example, the alcohol amine compound is one or more of methanolamine, ethanolamine, propanolamine, butanolamine, diethanolamine, triethylamine, dimethylethanolamine, N-methylethanolamine and triethanolamine. In this embodiment, the addition of the alcohol amine compound not only can maintain a stable etching rate of the etching solution, but also can stabilize hydrogen peroxide in the etching solution.
In some embodiments, the inorganic acid is one or more of phosphoric acid, sulfuric acid, nitric acid, hydrochloric acid, and carbonic acid.
In some embodiments, the organic acid is one or more of alanine, aminobutyric acid, glutamic acid, iminodiacetic acid, nitrilotriacetic acid, succinic acid, succinimide, iminodiacetic acid, and iminodisuccinic acid. In this embodiment, the organic acid is added not only to provide the pH required for the etching solution, but also to act as a metal ion chelating agent to complex the metal ions in the etching solution and to inhibit the decomposition of hydrogen peroxide in the etching solution.
In some embodiments, the acid salt is a compound formed after the reaction of an organic acid and a base solution. The acid salt is one or more of sodium salt, potassium salt and ammonium salt.
In some embodiments, the surfactant may be an alcohol. The alcohol substance can be one or more of methanol, ethanol, polyethylene glycol, diethylene glycol, 1, 2-propylene glycol and 1, 3-propylene glycol.
The embodiment of the application provides an application of an etching solution composition for a metal wire layer in an array substrate, wherein the etching solution composition can be used for wet etching the metal wire layer in the array substrate and an oxide active layer arranged below the metal wire at one time.
In some embodiments, the metal wire layer is copper or a multi-layer metal structure comprising primarily copper.
In some embodiments, the copper-containing multilayer metal structure is a bilayer structure of Cu/Mo or Cu/Mo alloy or a trilayer structure of Mo/Cu/Mo or Mo alloy/Cu/Mo alloy.
In some embodiments, the oxide active layer is an active layer containing indium, gallium, zinc, and oxygen.
The embodiment of the application also provides a manufacturing process for preparing an array substrate by using the etching solution composition for the metal wire layer, which comprises the following steps:
forming a grid electrode layer on a glass substrate, and then forming a grid electrode insulating layer, an oxide active layer, a source drain electrode layer and an insulating layer; and
and wet etching the oxide active layer and the source drain electrode layer by adopting the etching solution composition of the metal wire layer in one step to etch so as to pattern the oxide active layer and the source drain electrode layer.
In some embodiments, the oxide active layer is a compound containing indium, gallium, zinc, and oxygen; the source drain electrode layer is of a copper-containing multilayer metal structure, and is of a double-layer structure of Cu/Mo or Cu/Mo alloy or a three-layer structure of Mo/Cu/Mo or Mo alloy/Cu/Mo alloy.
Example 1:
the embodiment provides an etching solution composition for a metal wire layer, which comprises the following components in percentage by weight: 25 wt% of hydrogen peroxide, 6 wt% of azole compound, 0.001 wt% of fluorine-containing compound, 3 wt% of alcohol amine compound, 0.1 wt% of inorganic acid, 5 wt% of organic acid or acid salt thereof, 0.1 wt% of surfactant and the balance of water.
The azole compound is a tetrazole compound. The tetrazole compound is amino tetrazole or methyl tetrazole.
The fluorine-containing compound is sodium fluoride, aluminum fluoride or ammonium fluoride.
The alcohol amine compound is methanol amine, butanol amine or dimethyl ethanolamine.
The inorganic acid is phosphoric acid, hydrochloric acid or carbonic acid.
The organic acid is alanine, iminodiacetic acid or succinic acid.
The acid salt is sodium salt or ammonium salt.
The surfactant is methanol, polyethylene glycol or 1, 3-propylene glycol.
Example 2:
the embodiment provides an etching solution composition for a metal wire layer, which comprises the following components in percentage by weight: 15 wt% of hydrogen peroxide, 0.1 wt% of azole compound, 0.2 wt% of fluorine-containing compound, 0.1 wt% of alcohol amine compound, 5 wt% of inorganic acid, 0.1 wt% of organic acid or acid salt thereof, 3 wt% of surfactant and the balance of water.
The azole compound is a tetrazole compound. The tetrazole compound is phenyltetrazole, 5-amido-1H-tetrazole or 1, 5-pentamethylene tetrazole.
The fluorine-containing compound is potassium fluoride or borofluoric acid.
The alcohol amine compound is ethanolamine, butanol amine or triethanolamine.
The inorganic acid is sulfuric acid.
The organic acid is aminobutyric acid, glutamic acid or imino disuccinic acid.
The acid salt is potassium salt or ammonium salt.
The surfactant is ethanol, diethylene glycol or 1, 2-propylene glycol.
Example 3:
the embodiment provides an etching solution composition for a metal wire layer, which comprises the following components in percentage by weight: 20 wt% of hydrogen peroxide, 3 wt% of azole compound, 0.1 wt% of fluorine-containing compound, 1.5 wt% of alcohol amine compound, 2.5 wt% of inorganic acid, 2.5 wt% of organic acid or acid salt thereof, 1.5 wt% of surfactant and the balance of water.
The azole compound is a tetrazole compound. The tetrazole compound is amino tetrazole, 1, 5-pentamethylene tetrazole or 5-phenyl-1H-tetrazole.
The fluorine-containing compound is sodium fluoride or sodium hydrogen fluoride.
The alcohol amine compound is methanol amine, propanol amine or triethanolamine.
The inorganic acid is phosphoric acid or hydrochloric acid.
The organic acid is alanine, glutamic acid or succinimide.
The acid salt is sodium salt, potassium salt or ammonium salt.
The surfactant is methanol, diethylene glycol or 1, 3-propylene glycol.
Example 4:
in this embodiment, the etching solution composition for the metal wire layer in embodiments 1 to 3 of the present invention is applied to the array substrate, and the etching solution composition for the metal wire layer can wet-etch the metal wire layer and the oxide active layer disposed below the metal wire in the array substrate at one time.
The metal wire layer is copper or a multi-layer metal structure mainly containing copper. The copper-containing multilayer metal structure is a double-layer structure of Cu/Mo or Cu/Mo alloy, or a three-layer structure of Mo/Cu/Mo or Mo alloy/Cu/Mo alloy. The oxide active layer is an active layer containing indium, gallium, zinc and oxygen.
Example 5:
the embodiment provides a manufacturing process for preparing an array substrate, which comprises the following steps:
forming a grid electrode layer on a glass substrate, and then forming a grid electrode insulating layer, an oxide active layer, a source drain electrode layer and an insulating layer; and
etching the oxide active layer and the source drain electrode layer by using the etching solution composition for the metal wire layer in the embodiment 1-3 of the invention through one-step wet etching, so that the oxide active layer and the source drain electrode layer are patterned;
wherein the oxide active layer is a compound containing indium, gallium, zinc and oxygen; the source drain electrode layer is of a copper-containing multilayer metal structure, and is of a double-layer structure of Cu/Mo or Cu/Mo alloy or a three-layer structure of Mo/Cu/Mo or Mo alloy/Cu/Mo alloy.
In conclusion, the etching solution composition for the metal wire layer can be well applied to the etching process of the array substrate, has the effect of etching the metal wire and the oxide semiconductor layer simultaneously, reduces the etching process, saves the investment cost of a machine table and the etching solution, and improves the production beat and the efficiency of panel manufacturing.
The etching solution composition for a metal wire layer provided in the embodiments of the present application is described in detail above, and the principles and embodiments of the present application are explained herein by using specific examples, and the description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (10)

1. An etching solution composition for a metal wire layer, characterized in that the etching solution composition comprises: hydrogen peroxide, azoles, fluorine-containing compounds, alcohol amine compounds, inorganic acids, organic acids or acid salts thereof, surfactants and water.
2. The etching solution composition of claim 1, wherein the etching solution composition of the metal wire layer comprises, in weight percent: 15-25 wt% of hydrogen peroxide, 0.1-6 wt% of azole compound, 0.001-0.2 wt% of fluorine-containing compound, 0.1-3 wt% of alcohol amine compound, 0.1-5 wt% of inorganic acid, 0.1-5 wt% of organic acid or acid salt thereof, 0.1-3 wt% of surfactant and the balance of water.
3. The etching solution composition according to claim 1 or 2, wherein the azole compound is a tetrazole compound;
the tetrazole compound is one or more of amino tetrazole, methyl tetrazole, phenyl tetrazole, 5-amino-1H-tetrazole, 1, 5-pentamethylene tetrazole, 1H-tetrazole, 5-methyl-1H-tetrazole and 5-phenyl-1H-tetrazole.
4. The etching solution composition according to claim 1 or 2, wherein the fluorine-containing compound is one or more of sodium fluoride, potassium fluoride, aluminum fluoride, borofluoric acid, ammonium fluoride, ammonium bifluoride, sodium hydrogen fluoride, potassium bifluoride, ammonium fluoroborate and hafnium fluoride.
5. The etching solution composition according to claim 1 or 2, wherein the alcohol amine compound is a compound having an amino group and an alcohol group;
the alcohol amine compound is one or more of methanolamine, ethanolamine, propanolamine, butanolamine, diethanolamine, triethylamine, dimethylethanolamine, N-methylethanolamine and triethanolamine.
6. The etching solution composition according to claim 1 or 2, wherein the inorganic acid is one or more of phosphoric acid, sulfuric acid, nitric acid, hydrochloric acid and carbonic acid.
7. The etching solution composition according to claim 1 or 2, wherein the organic acid is an amino group-containing organic acid;
the organic acid is one or more of alanine, aminobutyric acid, glutamic acid, iminodiacetic acid, nitrilotriacetic acid, succinic acid, succinimide, iminodiacetic acid and iminodisuccinic acid.
8. The etching solution composition of claim 7, wherein the acid salt is a compound formed after the organic acid and the alkali solution react.
9. Use of the etching solution composition for the metal wire layer according to any one of claims 1 to 8 in an array substrate, the etching solution composition being used for simultaneously wet etching the metal wire layer and an oxide active layer disposed under the metal wire in the array substrate at one time; wherein the metal wire layer is copper or a multi-layer metal structure comprising primarily copper.
10. Use according to claim 9, wherein the copper-containing multilayer metal structure is a double layer structure of Cu/Mo or a Cu/Mo alloy or a triple layer structure of Mo/Cu/Mo or a Mo alloy/Cu/Mo alloy;
the oxide active layer is an active layer containing indium, gallium, zinc and oxygen.
CN202011110158.6A 2020-10-16 2020-10-16 Etching solution composition for metal wire layer and application thereof Pending CN112301348A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113549462A (en) * 2021-06-16 2021-10-26 江阴润玛电子材料股份有限公司 Ultrapure ammonium fluoride etching solution for microelectronics and preparation method thereof
CN114086180A (en) * 2021-11-22 2022-02-25 Tcl华星光电技术有限公司 Etching solution and manufacturing method of array substrate using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107227463A (en) * 2013-01-14 2017-10-03 易安爱富科技有限公司 The etchant of copper/molybdenum film or copper/molybdenum alloy film
CN109082663A (en) * 2018-07-19 2018-12-25 深圳市华星光电半导体显示技术有限公司 A kind of copper/molybdenum etching liquid composition and its application

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107227463A (en) * 2013-01-14 2017-10-03 易安爱富科技有限公司 The etchant of copper/molybdenum film or copper/molybdenum alloy film
CN109082663A (en) * 2018-07-19 2018-12-25 深圳市华星光电半导体显示技术有限公司 A kind of copper/molybdenum etching liquid composition and its application

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113549462A (en) * 2021-06-16 2021-10-26 江阴润玛电子材料股份有限公司 Ultrapure ammonium fluoride etching solution for microelectronics and preparation method thereof
CN114086180A (en) * 2021-11-22 2022-02-25 Tcl华星光电技术有限公司 Etching solution and manufacturing method of array substrate using same
CN114086180B (en) * 2021-11-22 2024-04-26 Tcl华星光电技术有限公司 Etching solution and manufacturing method of array substrate using same

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