CN112300424A - Preparation method of ETFE release film for IC chip - Google Patents

Preparation method of ETFE release film for IC chip Download PDF

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Publication number
CN112300424A
CN112300424A CN202011179697.5A CN202011179697A CN112300424A CN 112300424 A CN112300424 A CN 112300424A CN 202011179697 A CN202011179697 A CN 202011179697A CN 112300424 A CN112300424 A CN 112300424A
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China
Prior art keywords
etfe
layer
antioxidant
release film
extrusion
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Withdrawn
Application number
CN202011179697.5A
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Inventor
王翔宇
宋厚春
欧雪光
陈洪
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Yinjinda Shanghai New Material Co ltd
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Yinjinda Shanghai New Material Co ltd
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Priority to CN202011179697.5A priority Critical patent/CN112300424A/en
Publication of CN112300424A publication Critical patent/CN112300424A/en
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/022—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
    • B29C48/07—Flat, e.g. panels
    • B29C48/08—Flat, e.g. panels flexible, e.g. films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/16—Articles comprising two or more components, e.g. co-extruded layers
    • B29C48/18—Articles comprising two or more components, e.g. co-extruded layers the components being layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • C09J7/403—Adhesives in the form of films or foils characterised by release liners characterised by the structure of the release feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04—Homopolymers or copolymers of ethene
    • C08J2323/08—Copolymers of ethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2423/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2423/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2423/04—Homopolymers or copolymers of ethene
    • C08J2423/06—Polyethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2423/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2423/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2423/04—Homopolymers or copolymers of ethene
    • C08J2423/08—Copolymers of ethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2471/00—Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
    • C08J2471/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08J2471/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C08J2471/12—Polyphenylene oxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2481/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen, or carbon only; Polysulfones; Derivatives of such polymers
    • C08J2481/06—Polysulfones; Polyethersulfones
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
    • C08K13/02—Organic and inorganic ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/017—Additives being an antistatic agent
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Extrusion Moulding Of Plastics Or The Like (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention belongs to the field of release films, and discloses a preparation method of an ETFE release film for an IC chip, which comprises the following steps: (1) the ETFE resin, the cross-linking agent, the antioxidant and the toughening agent in the mass ratio of 100:4:3:5 are uniformly mixed and added into the inner layer of the three-layer co-extrusion extruder, and the ETFE resin, the cross-linking agent, the antioxidant and the adhesive in the mass ratio of 100:4:3:5 are uniformly mixed and added into the middle layer of the three-layer co-extrusion extruder. The ETFE release film is prepared by using ETFE resin as a main raw material and adopting a processing mode of multilayer melt co-extrusion and compounding, so that the comprehensive performance of the ETFE resin film is ensured to the maximum extent, the ETFE release film has the functions of high temperature resistance, wear resistance, static electricity resistance and the like, can be pressed at 250 ℃, has high release property, and avoids the possibility of the reduction of the overall performance of the ETFE resin film due to different material properties of a functional additive in the same film compared with the single extrusion film forming mode.

Description

Preparation method of ETFE release film for IC chip
Technical Field
The invention relates to the technical field of release films, in particular to a preparation method of an ETFE release film for an IC chip.
Background
The ETFE release film can also be called as an ethylene-chlorotetrafluoroethylene copolymer, is also called as an ETFE release film, an ETFE isolating film, an ETFE separating film, an ETFE glue-blocking film and the like, is mainly used for flexible circuit boards and high-power LED production and electronic products, such as being used as a release film in IC chip production, has very good function of isolating glue, and is not adhered to any glue;
however, the existing ETFE release film is mostly prepared by adopting a single extrusion film forming mode, and the mode makes the functional additives in the same film, and the possibility of the overall performance reduction of the ETFE release film is caused by different material properties.
Disclosure of Invention
Technical problem to be solved
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a preparation method of an ETFE release film for an IC chip, which solves the problems.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme:
a preparation method of an ETFE release film for an IC chip comprises the following steps:
(1) uniformly mixing ETFE resin, a cross-linking agent, an antioxidant and a toughening agent in a mass ratio of 100:4:3:5, adding the mixture into an inner layer of a three-layer co-extrusion extruder, uniformly mixing the ETFE resin, the cross-linking agent, the antioxidant and an adhesive in a mass ratio of 100:4:3:5, adding the mixture into a middle layer of the three-layer co-extrusion extruder, adding the ETFE resin, the cross-linking agent, the antioxidant, polyethylene wax particles and the antistatic agent in a mass ratio of 100:4:3:5:2 into an outer layer of the 3-layer co-extrusion extruder, and heating to melt and extrude the materials;
(2) after the materials which are melt-extruded are jointed by a nose, the materials are melt-extruded by a T-shaped die head by adopting a three-layer co-extrusion method, wherein the melt-extrusion temperature is 240-280 ℃, the screw size of an extruder is phi 20-60mm, the L/D is 20-50, and the rotating speed of the screw is 20-300 rpm;
(3) after being extruded by a T-shaped die head and then entering a cooling roller for cooling, the ETFE release film is obtained
Preferably, the ETFE resin in the step (1) is added into the inner layer, the middle layer and the outer layer of the three-layer co-extrusion extruder in a mass ratio of 1:1: 1.
Preferably, the cooling roller in the step (3) adopts a multi-spiral water inlet channel with a double-layer structure, and the water inlet channel is externally arranged and internally arranged
Preferably, the cross-linking agent is one of methyl methoxy siloxane, N-2- (aminoethyl) -3 aminopropyl methyl dimethoxy silane and vinyl triethoxy silane.
Preferably, the antioxidant is one of antioxidant 1076, antioxidant CA, antioxidant DLTP, antioxidant TNP and antioxidant TPP.
Preferably, the toughening agent is one or more of carboxyl-terminated hyperbranched polyester, thermoplastic polyphenylene ether ketone, thermoplastic polyether sulfone or ethylene-vinyl acetate copolymer.
Preferably, the antistatic agent is acetylene black, and the polyethylene wax particles have a particle size of 2 to 4 μm.
(III) advantageous effects
Compared with the prior art, the invention provides a preparation method of an ETFE release film for an IC chip, which has the following beneficial effects:
(1) the ETFE release film is prepared by using ETFE resin as a main raw material and adopting a processing mode of multilayer melt co-extrusion and compounding, so that the comprehensive performance of the ETFE resin film is ensured to the maximum extent, the ETFE release film has the functions of high temperature resistance, wear resistance, static electricity resistance and the like, can be pressed at 250 ℃, has high release property, and avoids the possibility of the reduction of the overall performance of the ETFE resin film due to different material properties of a functional additive in the same film compared with the single extrusion film forming mode.
(2) According to the ETFE release film, the cross-linking effect of each raw material is good through the cross-linking agent, the thickness of the obtained ETFE release layer is small, the residual adhesive force is high, the initial release force is stable, the tolerance range of the film surface is small, and the addition of the antioxidant can prevent thermal oxidation degradation of ETFE resin in the processing process, so that the ETFE release film is ensured to be formed and processed smoothly.
(2) The toughening agent of this scheme's interpolation can improve ETFE and leave the toughness of type membrane, it strikes from the external object in the use to receive from the type membrane when ETFE, can absorb certain energy, ethylene wax particle has changed ETFE and has left the outer constitution of type membrane, improve ETFE and leave the outer lubricating property of type membrane, increase its third dimension and glossiness, the ETFE that makes the acquisition shows lighter and stable type power from the type membrane, in addition, polyethylene wax trace has good wear resistance, can improve ETFE and leave the scratch resistance ability of type membrane.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
a preparation method of an ETFE release film for an IC chip comprises the following steps:
(1) uniformly mixing ETFE resin, a cross-linking agent, an antioxidant and a toughening agent in a mass ratio of 100:4:3:5, adding the mixture into an inner layer of a three-layer co-extrusion extruder, uniformly mixing the ETFE resin, the cross-linking agent, the antioxidant and an adhesive in a mass ratio of 100:4:3:5, adding the mixture into a middle layer of the three-layer co-extrusion extruder, adding the ETFE resin, the cross-linking agent, the antioxidant, polyethylene wax particles and the antistatic agent in a mass ratio of 100:4:3:5:2 into an outer layer of the 3-layer co-extrusion extruder, and heating to melt and extrude the materials;
(2) after the materials which are melt and extruded are jointed by a nose, the materials are melt and extruded by a T-shaped die head by adopting a three-layer co-extrusion method, the melt extrusion temperature is 240-280 ℃, the size of a screw of an extruder is phi is 20-60mm, the L/D is 20-50, and the rotating speed of the screw is 20-300 rpm;
(3) after being extruded by a T-shaped die head and then entering a cooling roller for cooling, the ETFE release film is obtained
Further, the mass ratio of the addition amount of the ETFE resin in the step (1) to the inner layer, the middle layer and the outer layer of the three-layer coextrusion extruder is 1:1: 1.
Further, the cooling roller in the step (3) adopts a multi-spiral water inlet channel with a double-layer structure, and the outer part is provided with an inner row
Furthermore, the cross-linking agent is one of methyl methoxy siloxane, N-2- (aminoethyl) -3 aminopropyl methyl dimethoxy silane and vinyl triethoxy silane, the cross-linking effect of the raw materials is good through the cross-linking agent, the thickness of the obtained ETFE release layer is small, the residual adhesive force is high, the initial release force is stable, and the tolerance range of the film surface is small.
Furthermore, the antioxidant is one of antioxidant 1076, antioxidant CA, antioxidant DLTP, antioxidant TNP and antioxidant TPP, and the antioxidant is added to prevent the ETFE resin from thermal oxidation degradation in the processing process, so that the forming and processing of the ETFE release film are ensured to be carried out smoothly.
Furthermore, the toughening agent is one or more of carboxyl-terminated hyperbranched polyester, thermoplastic polyphenylene ether ketone, thermoplastic polyether sulfone or ethylene-vinyl acetate copolymer, the toughness of the ETFE release film can be improved by adding the toughening agent, and when the ETFE release film is impacted by an external object in the using process, a certain amount of energy can be absorbed.
Furthermore, the antistatic agent is acetylene black, the particle size of the polyethylene wax particles is 2-4 μm, the polyethylene wax particles change the outer layer composition of the ETFE release film, the lubricating property of the outer layer of the ETFE release film is improved, the stereoscopic impression and the glossiness of the ETFE release film are increased, the obtained ETFE release film shows a light and stable release force, and in addition, the trace amount of the polyethylene wax has excellent wear resistance and can improve the scratch resistance of the ETFE release film.
The foregoing is only a preferred embodiment of the present invention; the scope of the invention is not limited thereto. Any person skilled in the art should be able to cover the technical scope of the present invention by equivalent or modified solutions and modifications within the technical scope of the present invention.

Claims (7)

1. A preparation method of an ETFE release film for an IC chip is characterized by comprising the following steps: the method comprises the following steps:
(1) uniformly mixing ETFE resin, a cross-linking agent, an antioxidant and a toughening agent in a mass ratio of 100:4:3:5, adding the mixture into an inner layer of a three-layer co-extrusion extruder, uniformly mixing the ETFE resin, the cross-linking agent, the antioxidant and an adhesive in a mass ratio of 100:4:3:5, adding the mixture into a middle layer of the three-layer co-extrusion extruder, adding the ETFE resin, the cross-linking agent, the antioxidant, polyethylene wax particles and the antistatic agent in a mass ratio of 100:4:3:5:2 into an outer layer of the 3-layer co-extrusion extruder, and heating to melt and extrude the materials;
(2) after the materials which are melt-extruded are jointed by a nose, the materials are melt-extruded by a T-shaped die head by adopting a three-layer co-extrusion method, wherein the melt-extrusion temperature is 240-280 ℃, the screw size of an extruder is phi 20-60mm, the L/D is 20-50, and the rotating speed of the screw is 20-300 rpm;
(3) and (3) after being extruded by a T-shaped die head, entering a cooling roller for cooling to obtain the ETFE release film.
2. The method for preparing an ETFE release film for IC chips according to claim 1, which is characterized in that: the mass ratio of the addition amount of the ETFE resin in the step (1) in the inner layer, the middle layer and the outer layer of the three-layer co-extrusion type extruder is 1:1: 1.
3. The method for preparing an ETFE release film for IC chips according to claim 1, which is characterized in that: and (3) the cooling roller adopts a multi-spiral water inlet channel with a double-layer structure, and the cooling roller enters the inner row from the outside.
4. The method for preparing an ETFE release film for IC chips according to claim 1, which is characterized in that: the cross-linking agent is one of methyl methoxy siloxane, N-2- (aminoethyl) -3-aminopropyl methyl dimethoxy silane and vinyl triethoxy silane.
5. The method for preparing an ETFE release film for IC chips according to claim 1, which is characterized in that: the antioxidant is one of antioxidant 1076, antioxidant CA, antioxidant DLTP, antioxidant TNP and antioxidant TPP.
6. The method for preparing an ETFE release film for IC chips according to claim 1, which is characterized in that: the toughening agent is one or more of carboxyl-terminated hyperbranched polyester, thermoplastic polyphenylene ether ketone, thermoplastic polyether sulfone or ethylene-vinyl acetate copolymer.
7. The method for preparing an ETFE release film for IC chips according to claim 1, which is characterized in that: the antistatic agent is acetylene black, and the particle size of the polyethylene wax particles is 2-4 mu m.
CN202011179697.5A 2020-10-29 2020-10-29 Preparation method of ETFE release film for IC chip Withdrawn CN112300424A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114434708A (en) * 2022-01-27 2022-05-06 河南源宏高分子新材料有限公司 Preparation method of ETFE release film for IC chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114434708A (en) * 2022-01-27 2022-05-06 河南源宏高分子新材料有限公司 Preparation method of ETFE release film for IC chip

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Application publication date: 20210202