CN112299869A - Laser welding method for silicon carbide and composite material thereof - Google Patents
Laser welding method for silicon carbide and composite material thereof Download PDFInfo
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/10—Glass interlayers, e.g. frit or flux
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/16—Silicon interlayers
Abstract
The invention discloses a method for laser welding of silicon carbide and a composite material thereof. The method comprises the following steps: (1) preparing a silicon powder suspension containing silicon powder and a solvent; (2) uniformly coating the silicon powder suspension on the surface of the silicon carbide component to be welded and drying to obtain the silicon carbide component with the surface coated with the silicon layer; (3) carrying out laser cladding treatment on the silicon carbide component with the surface coated with the silicon layer; (4) coating glass powder slurry containing glass powder and a solvent on the silicon carbide component subjected to laser cladding; (5) repeating steps (2) - (3) for another silicon carbide part to be welded; (6) and (5) butting the silicon carbide part coated with the glass powder slurry in the step (4) with the other silicon carbide part to be welded subjected to laser cladding treatment in the step (5), and drying and carrying out heat treatment. The method solves the problem that the wettability of the molten glass and the silicon carbide part of the glass welding silicon carbide and the composite material thereof is poor at a low temperature stage.
Description
Technical Field
The invention belongs to the field of ceramic welding, and particularly relates to a method for laser welding of silicon carbide and a composite material thereof.
Background
The silicon carbide and the composite material thereof have excellent performances of high strength, high thermal conductivity, low thermal expansion and the like, and are widely applied to the fields of petroleum, chemical industry, machinery, aerospace and the like. Engineering applications often place varying demands on the size and shape of ceramic components, sometimes requiring the use of ceramic components in conjunction with metal components. For example, in a silicon carbide heat exchanger, a single silicon carbide heat exchange tube having a length of several tens of meters is required, and it is difficult to directly fire the silicon carbide heat exchange tube having such a length in a single sintering due to process and equipment limitations, and therefore, a plurality of short tubes need to be welded by means of welding to a target length. In the field of satellites, a larger satellite reflector is needed for obtaining a clearer picture, and sintering of a large silicon carbide single reflector has higher difficulty, and the adoption of block sintering and then welding is an effective solution for manufacturing the large reflector. In addition, the high brittleness and low ductility of the silicon carbide and the composite material thereof cause great difficulty in processing, and complex parts can be disassembled, sintered and reconnected by adopting a welding method. Therefore, the welding of silicon carbide and the composite material thereof has great significance.
Aiming at different requirements, the connection technology of the silicon carbide and the composite material thereof mainly comprises a mechanical hinge method, a metal brazing method, a diffusion connection method, a ceramic precursor conversion method, a glass welding method, a reaction combination method and the like. Each method of attachment has its own unique advantages and disadvantages. The mechanical hinge method is convenient to operate, the required equipment is simple, the connection mode is physical connection, interface problems do not need to be considered, but the ceramic interface connected by the method is loose and cannot be completely sealed. The metal brazing method has low connection temperature and mature process, is easy to obtain a good interface, has better performance in an alkaline environment, and has volatile effect in an acidic environment. The diffusion bonding method and the ceramic precursor conversion method require higher temperature, and have greater technical difficulty for welding large-scale components. The glass welding temperature is lower, the interface sealing performance is good, the glass welding material has good corrosion resistance in an acid environment, and the glass welding material is used for welding ceramics since the 80 th century 19. However, when the glass solder is used for directly soldering the silicon carbide ceramic, the soldering temperature is usually over 1200 ℃, otherwise, the glass solder and the silicon carbide ceramic have poor wettability at low temperature, which further influences the strength of the contact interface between the glass solder and the silicon carbide ceramic.
Disclosure of Invention
The invention aims to solve the problem that the wettability of molten glass and a silicon carbide part (also called as a silicon carbide substrate) of glass welding silicon carbide and a composite material thereof is poor at a low-temperature stage. In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a method for laser welding of silicon carbide and a composite material thereof. The method comprises the following steps:
(1) preparing a silicon powder suspension containing silicon powder and a solvent;
(2) uniformly coating the silicon powder suspension on the surface of the silicon carbide component to be welded and drying to obtain the silicon carbide component with the surface coated with the silicon layer;
(3) carrying out laser cladding treatment on the silicon carbide component with the surface coated with the silicon layer;
(4) coating glass powder slurry containing glass powder and a solvent on the silicon carbide component subjected to laser cladding;
(5) repeating steps (2) - (3) for another silicon carbide part to be welded;
(6) and (5) butting the silicon carbide part coated with the glass powder slurry in the step (4) with the other silicon carbide part to be welded subjected to laser cladding treatment in the step (5), and drying and carrying out heat treatment.
The silicon layer is used as a transition layer between the silicon carbide part to be welded and the glass solder, and the matching degree of the thermal expansion coefficients of the silicon, the silicon carbide and the glass solder (especially the borosilicate glass solder) is good. Moreover, a large amount of silicon elements exist in silicon carbide and glass solder, and the silicon layer is used as a transition layer between the silicon carbide and the glass solder, so that better diffusion bonding is formed, and the glass solder has excellent chemical compatibility.
Furthermore, when glass is used for welding silicon carbide and the composite material thereof, the glass solder has high viscosity during heat treatment, and generates large surface tension, so that the wettability of the molten glass and the silicon carbide substrate to be welded is poor. It is generally necessary to increase the soldering temperature above 1200 c to achieve good wetting of the glass solder with the silicon carbide substrate. The invention provides a method for preparing a silicon carbide substrate by using a laser cladding silicon layer as a transition layer between a glass solder and the silicon carbide substrate. The silicon layer is in a molten state when the temperature of the silicon layer reaches more than 1400 ℃ under the action of laser, and is well physically and chemically combined with the silicon carbide substrate, and mutual diffusion and reaction of oxygen and silicon exist at the interface of the silicon layer and the glass solder, so that good wetting and combination can be realized between the silicon layer and the glass solder. In conclusion, the wetting angle between the glass solder and the silicon carbide substrate modified by the laser cladding silicon layer at the welding temperature (heat treatment temperature) below 1000 ℃ can reach less than 90 degrees, a good wetting effect is achieved, and the bending strength of a welding sample can reach more than 100 MPa.
Preferably, the silicon carbide component has a coefficient of thermal expansion of 3.2 x 10 at 25-1000 deg.C-6/K-5.2×10-6The thermal expansion coefficient of the glass powder at 25-450 ℃ is 3.0 multiplied by 10-6/K-6.0×10-6and/K. Preferably, the difference between the coefficients of thermal expansion of the glass frit and the silicon carbide component is no more than 0.5 x 10-6/K。
Preferably, the glass powder is borosilicate glass powder. Borosilicate glass has a low coefficient of thermal expansion, matching that of silicon carbide, and has good chemical stability, which increases the reliability of the soldered part.
Preferably, in the chemical composition of the borosilicate glass powder, the content of boron oxide is 10-30wt%, and the content of silicon dioxide is 60-85 wt%. By adjusting the content of boron oxide and silicon dioxide in the borosilicate glass, the borosilicate glass with similar thermal expansion to the silicon carbide substrate is preparedGlass with coefficient of expansion. The borosilicate glass has a coefficient of thermal expansion of 3.7X 10 at 25-450 deg.C-6/K-4.5×10-6and/K. The matched thermal expansion coefficients can reduce residual thermal stress in the glass welding layer and the silicon carbide substrate and improve the mechanical strength of the welding part.
Preferably, the silicon powder suspension comprises silicon powder and a solvent. Wherein, the content of the silicon powder in the silicon powder suspension is preferably below 50 wt%. When the solid content of the silicon powder suspension is high, the coated silicon layer is thick, and a uniform silicon layer is not easy to obtain in the laser cladding process.
Preferably, the glass frit slurry comprises glass frit and a solvent. Wherein, the content of the glass powder in the glass powder slurry is preferably 50-70 wt%. By ensuring that the glass frit content of the glass frit paste is within a suitable range, a uniform glass solder layer can be more easily applied to the surface of the silicon carbide component.
Preferably, the solvent of the silicon powder suspension and the solvent of the glass powder slurry are respectively and independently selected from one or more of ethanol, acetone and deionized water. Ethanol is preferred.
Preferably, the material of the silicon carbide parts to be welded comprises one or more of silicon carbide, carbon fiber reinforced silicon carbide and silicon carbide fiber reinforced silicon carbide.
Preferably, laser cladding uses a laser source with cladding material having an absorption rate of laser light higher than 60%. Including but not limited to a carbon dioxide laser, fiber laser, semiconductor laser, or solid state laser. According to the characteristics of the cladding material (silicon powder is used in the invention), laser with the wavelength of 106400nm can be selected in the invention to realize effective photothermal conversion and obtain enough heat to melt the silicon layer.
Preferably, the laser power of the laser cladding is between 45 and 100W; the protective gas for laser cladding is inert gas.
Preferably, the temperature of the heat treatment is between 800 and 1000 ℃; the protective atmosphere of the heat treatment is inert gas or air; the heat treatment time is 10-60 minutes.
Preferably, the method forms a glass layer and silicon carbide bonding interface with a bending strength greater than 100 MPa.
Preferably, the method further comprises a pre-treatment of the silicon carbide parts to be welded; preferably, before the silicon powder suspension is coated, the surface of the silicon carbide part to be welded is treated by a mechanical method, and then the silicon carbide part is sequentially cleaned by ethanol and deionized water in an ultrasonic mode.
Drawings
FIG. 1 is a wetting angle (a) between a molten glass solder and a silicon carbide substrate; wetting angle (b) between the molten glass solder and the silicon carbide substrate modified by the laser cladding silicon layer;
FIG. 2 is a graph comparing the thermal expansion coefficients of a glass solder borosilicate glass frit with silicon carbide;
FIG. 3 is an SEM image (a) and an elemental distribution image (b) of the interface morphology structure of the glass solder layer and the silicon carbide substrate;
FIG. 4 is a three-point bending resistance test curve (a) and a fracture morphology graph (b) of a 900 ℃ welded silicon carbide test strip;
FIG. 5 is a three-point bending test curve of a 850 deg.C soldered silicon carbide test strip.
Detailed Description
The present invention is further illustrated by the following examples, which are to be understood as merely illustrative of, and not restrictive on, the present invention. The following percentages are by mass unless otherwise specified.
The method of laser welding silicon carbide and its composites is exemplified below.
And preparing a silicon powder suspension. The raw material composition of the silicon powder suspension can comprise silicon powder and a solvent. For example, a suspension of silicon powder can be obtained by ball milling silicon powder and a solvent. The solvent of the silica powder suspension is preferably ethanol. In the ball milling process, agate balls are used as grinding balls, and the mass ratio of the materials to the grinding balls is 1: 2. the particle size of the silicon powder in the silicon powder suspension can be less than 3 microns. The proper particle size of the silicon powder is helpful for obtaining a uniform laser cladding silicon layer. In some embodiments, the suspension of silicon powder has a solids content of less than 50 wt%.
And uniformly coating the silicon powder suspension on the surface to be welded of the silicon carbide part. The material of the silicon carbide part can be silicon carbide and composite materials thereof. Silicon carbide composites include, but are not limited to, carbon fiber reinforced silicon carbide and/or silicon carbide fiber reinforced silicon carbide.
In some embodiments, the surface of the silicon carbide component to be welded is pretreated prior to coating the silicon powder suspension on the surface of the silicon carbide component. The purpose of this pretreatment is to remove the carbon layer (which may form a small amount of carbon impurities on the surface during sintering of the silicon carbide ceramic) from the surface of the silicon carbide parts to be welded so as not to interfere with subsequent welding. For example, the pretreatment may be a grinding machine treatment of the surface of the silicon carbide parts to be welded, followed by ultrasonic cleaning with ethanol and deionized water in sequence.
And drying the silicon carbide part coated with the silicon powder suspension to obtain the silicon carbide part with the surface coated with the silicon layer. For example, oven drying may be used. The thickness of the silicon layer is preferably less than 3 μm. This is because the energy instantaneously generated by the laser is high during laser cladding, so that the silicon at the surface temperature of the silicon layer to be clad is vaporized, and the silicon in the inner layer is not melted yet, which is not favorable for obtaining a uniform laser cladding silicon layer.
And carrying out laser cladding on the silicon carbide part with the surface coated with the silicon layer. And selecting a laser source with a higher absorption coefficient according to the relation of the cladding material to the absorption coefficients of different laser wavelengths. The laser source includes, but is not limited to, a carbon dioxide laser, a fiber laser, a semiconductor laser, or a solid state laser. The laser source is preferably a carbon dioxide laser or a fiber laser. The laser power is controlled to be 45-100W, and the laser cladding silicon layer with excellent performance can be obtained.
The laser cladding is preferably performed under inert gas shielding to protect the substrates to be welded. The inert gas may be argon or nitrogen. In some embodiments, the silicon carbide components to be welded are placed in an atmosphere protection box for a laser cladding process.
And coating glass powder slurry on the silicon layer after laser cladding. The glass frit paste includes glass frit and a solvent. The thermal expansion coefficient of the glass powder is matched with that of the silicon carbide substrate to be welded. Preferably, the silicon carbide substrate to be welded has a thermal expansion coefficient of 3.2X 10 at 25-1000 deg.C-6/K-5.2×10-6K, heat of the glass powder at 25-450 DEG CCoefficient of expansion of 3.0X 10-6-6.0×10-6and/K. More preferably, the difference between the coefficients of thermal expansion of the glass frit and the silicon carbide substrate to be bonded is not more than 0.5X 10-6and/K. In some embodiments, the glass frit paste has a particle size of less than 5 μm.
The thermal expansion coefficient of the conventional borosilicate glass is 3.3 multiplied by 10-6and/K, the thermal expansion coefficient of the material is lower than that of the silicon carbide, and the thermal expansion coefficients of the material and the silicon carbide are greatly different. The chemical composition of the borosilicate glass is adjusted to control the thermal expansion coefficient to be 3.7 multiplied by 10-6/K-4.5×10-6and/K. This allows matching the thermal expansion coefficient of the silicon carbide substrate.
The solvent of the glass frit paste is preferably ethanol. Optionally, the glass frit slurry has a solid content of 50 to 70 wt%. If the glass frit content of the glass frit paste exceeds 70% by mass, it may cause non-uniform coating of the glass solder coated on the silicon carbide substrate.
And coating silicon powder suspension and laser cladding on the other silicon carbide part to be welded by the same operation. And (3) finishing butt joint of the silicon carbide part coated with the glass powder slurry and the other silicon carbide part to be welded after laser cladding treatment. And after the butt joint is finished, drying and heat treatment are carried out.
The heat treatment may be performed in a heat treatment furnace. The atmosphere of the heat treatment welding process is inert gas or air. The inert gas during the heat treatment may be argon or nitrogen. The temperature of the heat treatment process is controlled to be between 800 and 1000 ℃.
In some embodiments, the thickness of the welding interface layer (i.e., the interface layer of contact between the parts to be welded) after the heat treatment is completed is 300 μm or less.
The invention utilizes the high-energy local thermal action of laser to melt the silicon powder with high melting point on the silicon carbide substrate to prepare the silicon layer, and the silicon powder and the silicon carbide substrate form good combination. And then the good diffusion and reaction between the glass solder and the silicon layer are utilized to improve the wettability between the glass solder and the silicon layer. And the glass solder and the silicon carbide modified by the laser cladding silicon layer are well wetted at a lower temperature, so that the glass welding of the silicon carbide at the lower temperature is realized.
The present invention is further illustrated by the following examples. However, the scope of the present invention should not be limited to the scope described in examples and comparative examples, and any modification that does not depart from the subject matter of the present invention will be understood by those skilled in the art to be within the scope of the present invention. The specific process parameters and the like of the following examples are also only one example of suitable ranges and are not intended to be limited to the specific values of the following examples.
Example 1
(1) Preparation of silica powder suspension
Weighing 20g of silicon powder and 80g of ethanol, placing the silicon powder and the ethanol into a ball milling pot, adding 40g of agate balls into the ball milling pot, and carrying out ball milling on a planetary ball mill at the rotating speed of 300 revolutions per minute for 24 hours. The average particle size of the silica powder in the silica powder suspension was 1 μm.
(2) Preparation of a silicon layer
And (3) carrying out surface treatment on the surface to be welded of the silicon carbide substrate by using a grinding machine, and then carrying out ultrasonic cleaning for 1 hour by using ethanol and deionized water in sequence. And (5) drying the cleaned sample in an oven. And uniformly coating the silicon powder suspension on the surface to be welded, and then drying to obtain the silicon carbide substrate with the surface coated with the silicon layer.
(3) Laser cladding process
And placing the silicon carbide substrate sample with the surface coated with the silicon layer in a laser cladding atmosphere box, vacuumizing the atmosphere box by using a vacuum pump, and filling argon. Using a carbon dioxide laser, adjusting laser parameters: the laser power is 60W, the scanning speed is 15mm/s, and the scanning interval is 0.1 mm. And then starting laser scanning on the welding surface to obtain the laser cladding silicon layer. And carrying out laser cladding preparation of a silicon layer on another silicon carbide substrate sample to be welded by adopting the same operation.
(4) Preparation of glass paste
As shown in fig. 2, to reduce the residual stress in the glass solder layer, a glass having a thermal expansion coefficient close to that of the silicon carbide matrix was prepared by adjusting the mass percentages of boron oxide and silicon dioxide in the borosilicate glass. In the chemical composition of the borosilicate glass powder, the content of boron oxide is 10-30wt%, and the content of silicon dioxide is 60-85 wt%. 60g of borosilicate glass powder and 30g of ethanol are weighed and placed in a ball milling tank, 60g of agate balls are added into the ball milling tank, and the mixture is ball milled for 12 hours on a planetary ball mill with the rotating speed of 300 r/min, so that glass slurry with the average grain diameter of the glass powder of 3 mu m is obtained.
(5) Glass-welded silicon carbide
And uniformly coating glass slurry between the two surfaces to be welded to prepare a sandwich structure. And (3) placing the sample in an oven for drying, then placing the sample in a muffle furnace for heat treatment, wherein the heat treatment temperature is 900 ℃, and preserving the heat for 40 minutes to obtain the welding test strip.
As can be seen from the interface morphology structure (a) of fig. 3, there is a uniform laser-clad silicon layer between the glass solder layer and the silicon carbide substrate, which is tightly bonded to both the glass layer and the silicon carbide substrate, with no bubbles at the interface. It can be seen from the element distribution (b) of fig. 3 that oxygen is distributed in the laser-clad silicon layer, which indicates that there is diffusion of oxygen between the silicon layer and the glass solder, and the interface between them is chemical bonding. As shown in FIG. 4 (a), the three-point bending resistance test showed that the bending strength was 110MPa (the size of the welded bar was 3X 4X 36mm, and the test span was 30 mm). From the microscopic view (b) in fig. 4, it can be seen that the location of the fracture is inside the glass layer, and the interface between the glass layer and the silicon carbide substrate remains intact, which again confirms the high bending strength of the glass layer and silicon carbide solder interface.
Example 2
(1) Preparation of silica powder suspension
Weighing 20g of silicon powder and 80g of ethanol, placing the silicon powder and the ethanol into a ball milling pot, adding 40g of agate balls into the ball milling pot, and carrying out ball milling on a planetary ball mill at the rotating speed of 300 revolutions per minute for 24 hours. The average particle size of the silica powder in the silica powder suspension was 1 μm.
(2) Preparation of a silicon layer
And (3) carrying out surface treatment on the surface to be welded of the silicon carbide substrate by using a grinding machine, and then carrying out ultrasonic cleaning for 1 hour by using ethanol and deionized water in sequence. And (5) drying the cleaned sample in an oven. And uniformly coating the silicon powder suspension on the surface to be welded, and then drying to obtain the silicon carbide substrate with the surface coated with the silicon layer.
(3) Laser cladding process
And placing the silicon carbide substrate sample with the surface coated with the silicon layer in a laser cladding atmosphere box, vacuumizing the atmosphere box by using a vacuum pump, and filling argon. Using a carbon dioxide laser, adjusting laser parameters: laser power 45W, scanning speed 10mm/s, scanning interval 0.1 mm. And then starting laser scanning on the welding surface to obtain the laser cladding silicon layer. And carrying out laser cladding preparation of a silicon layer on another silicon carbide substrate sample to be welded by adopting the same operation.
(4) Preparation of glass paste
60g of borosilicate glass powder and 30g of ethanol are weighed and placed in a ball milling pot, 60g of agate balls are added into the ball milling pot, and the ball milling is carried out for 12 hours on a planetary ball mill with the rotating speed of 300 r/min. In the chemical composition of the borosilicate glass powder, the content of boron oxide is 10-30wt%, and the content of silicon dioxide is 60-85 wt%. The average particle size of the glass frit in the obtained glass paste was 3 μm.
(5) Glass-welded silicon carbide
And uniformly coating glass slurry between the two welding surfaces to prepare a sandwich structure. And (3) placing the sample in an oven for drying, then placing the sample in a muffle furnace for heat treatment, wherein the heat treatment temperature is 850 ℃, and keeping the temperature for 40 minutes to obtain the welding test strip.
As shown in fig. 5, the cross section of the solder bar is 3 × 4mm, and it is determined by three-point bending resistance test (the size of the solder bar is 3 × 4 × 36mm, and the test span is 30mm), the bending strength is 100MPa, and the breaking position is the solder glass layer, so that the bonding strength between the solder glass layer and the silicon carbide substrate is higher than 100 MPa.
Wettability test
Glass solders are respectively placed on the silicon carbide substrate and the silicon carbide substrate subjected to laser cladding silicon layer modification in the step (3) in the example 1 (except that the substrates where the glass solders are placed are different, other parameters of the substrates are the same so as to compare wettability), and then the sample is placed in a muffle furnace to be subjected to heat treatment at the temperature of 900 ℃ for 40 minutes. Wetting Angle As shown in FIG. 1 (a), the wetting angle between the molten glass solder and the silicon carbide substrate is greater than 90 °; wetting angle as shown in fig. 1 (b), the wetting angle between the molten glass solder and the silicon carbide substrate after modification of the laser-clad silicon layer was less than 90 °. The laser cladding silicon layer greatly improves the wettability of the glass solder and the substrate, and the non-wetting body is changed into the wetting state under the heat treatment of keeping the temperature at 900 ℃ for 40 minutes.
Claims (10)
1. A method for laser welding silicon carbide and a composite material thereof is characterized by comprising the following steps:
(1) preparing a silicon powder suspension containing silicon powder and a solvent;
(2) uniformly coating the silicon powder suspension on the surface of the silicon carbide component to be welded and drying to obtain the silicon carbide component with the surface coated with the silicon layer;
(3) carrying out laser cladding treatment on the silicon carbide component with the surface coated with the silicon layer;
(4) coating glass powder slurry containing glass powder and a solvent on the silicon carbide component subjected to laser cladding;
(5) repeating steps (2) - (3) for another silicon carbide part to be welded;
(6) and (5) butting the silicon carbide part coated with the glass powder slurry in the step (4) with the other silicon carbide part to be welded subjected to laser cladding treatment in the step (5), and drying and carrying out heat treatment.
2. The method of claim 1, wherein the silicon carbide component has a coefficient of thermal expansion of 3.2 x 10 at 25 to 1000 ℃-6/K~5.2×10-6The thermal expansion coefficient of the glass powder at 25-450 ℃ is 3.0 multiplied by 10-6/K~6.0×10-6K; preferably, the difference between the coefficients of thermal expansion of the glass frit and the silicon carbide component is no more than 0.5 x 10-6/K。
3. The method according to claim 1 or 2, wherein the glass frit is a borosilicate glass frit; wherein, in the chemical composition of the borosilicate glass powder, the content of boron oxide is 10-30wt%, and the content of silicon dioxide is 60-85 wt%.
4. A method according to any one of claims 1 to 3, wherein the suspension of silicon powder has a silicon powder content of less than 50 wt%; the content of the glass powder in the glass powder slurry is 50-70 wt%; preferably, the solvent of the silicon powder suspension and the solvent of the glass powder slurry are respectively and independently selected from one or more of ethanol, acetone and deionized water.
5. A method according to any one of claims 1 to 4, wherein the material of the silicon carbide parts to be welded comprises one or more of silicon carbide, carbon fibre reinforced silicon carbide, silicon carbide fibre reinforced silicon carbide.
6. The method of any one of claims 1 to 5, wherein laser cladding uses a laser source with a cladding material absorption to laser light higher than 60%; the laser source comprises a carbon dioxide laser, a fiber laser, a semiconductor laser or a solid laser; preferably, the laser source generates laser light having a wavelength of 106400 nm.
7. The method according to any one of claims 1 to 6, wherein the laser power of laser cladding is between 45 and 100W; the protective gas for laser cladding is inert gas.
8. The method according to any one of claims 1 to 7, wherein the temperature of the heat treatment is between 800 and 1000 ℃; the protective atmosphere of the heat treatment is inert gas or air; the heat treatment time is 10-60 minutes.
9. The method according to any one of claims 1 to 8, wherein the method forms a glass layer to silicon carbide welding interface with a bending strength higher than 100 MPa.
10. A method according to any one of claims 1 to 9, further comprising a pre-treatment of the silicon carbide parts to be welded; preferably, before the silicon powder suspension is coated, the surface of the silicon carbide part to be welded is treated by a mechanical method, and then the silicon carbide part is sequentially cleaned by ethanol and deionized water in an ultrasonic mode.
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