CN109369208B - Brazing filler metal for silicon carbide connection and preparation method and application thereof - Google Patents
Brazing filler metal for silicon carbide connection and preparation method and application thereof Download PDFInfo
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- CN109369208B CN109369208B CN201811289729.XA CN201811289729A CN109369208B CN 109369208 B CN109369208 B CN 109369208B CN 201811289729 A CN201811289729 A CN 201811289729A CN 109369208 B CN109369208 B CN 109369208B
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- silicon carbide
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
Abstract
The invention belongs to the field of non-oxide ceramic connection, and discloses a brazing filler metal for silicon carbide connection and a preparation method and application thereof. The brazing filler metal is prepared by mixing 40-99% of Nb powder, 40-99% of Ta powder and 1-20% of Cr powder in percentage by mass. When in connection application, the brazing filler metal is mixed to prepare slurry, the surface of the silicon carbide is polished to remove impurities on the surface, the slurry is uniformly coated on the polished surface of the silicon carbide and is placed into a heat treatment furnace for connection. Nb has similar properties to Ta and has a thermal expansion coefficient of 7.5X 10‑6K, coefficient of thermal expansion of SiC ceramic (4.7X 10)‑6/K) are relatively close, so Ta/Nb is taken as an intermediate layer, the distribution of the thermal stress of the joint can be improved, meanwhile, the addition of metal Cr powder can improve the corrosion resistance of the connecting layer, and the thermal expansion coefficient is 6.5 multiplied by 10‑6The thermal expansion coefficients of the/K and the SiC ceramic are relatively close.
Description
Technical Field
The invention belongs to the field of non-oxide ceramic connection, and particularly relates to a brazing filler metal for silicon carbide connection and a preparation method and application thereof.
Background
The SiC ceramic has good high-temperature strength, hardness, wear resistance and corrosion resistance, is a promising high-temperature structural material, and is widely applied to the fields of automobiles, machinery, metallurgy, aerospace and the like. Reliable joining of the ceramic itself provides the necessary technical support for its wider application. Since the ceramic material has brittle properties and poor toughness, which cannot be overcome for a while, the ceramic material has poor processability and is very difficult to manufacture large-sized or complex-shaped parts, it is necessary to produce complex-shaped products by using a ceramic-to-ceramic joining technique.
At present, the connection mode between ceramics is braze welding, diffusion welding and partial transient liquid phase diffusion welding. The most common method is brazing, which forms a joint by filling a brazing filler metal, containing elements such as T, Zr and V, between the joined ceramics and reacting with the base metal to change the wettability of the brazing filler metal to the ceramic interface. The limitation of the brazing method is that high vacuum degree and thermal expansion coefficient matching between the brazing filler metal and the base metal are required, the brazing is generally carried out in a brazing furnace, the welding equipment is expensive, and large-sized workpieces are difficult to weld.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention mainly aims to provide a brazing filler metal for silicon carbide connection.
Still another object of the present invention is to provide a method for preparing the brazing filler metal for silicon carbide interconnection.
Still another object of the present invention is to provide use of the above brazing filler metal for silicon carbide bonding.
The purpose of the invention is realized by the following technical scheme:
the invention provides a brazing filler metal for silicon carbide connection and a connection method, comprising the following steps:
the brazing filler metal for silicon carbide connection is prepared by mixing 60-90 wt%, 5-35 wt% and 5 wt% of Nb powder, Ta powder and Cr powder
Preferably, the brazing filler metal is prepared by mixing 80%, 15% and 5% of Nb powder, Ta powder and Cr powder in percentage by mass.
The purities of the Nb powder, the Ta powder and the Cr powder are all 99-100%.
The preparation method of the brazing filler metal for silicon carbide connection comprises the following steps: mixing Nb powder, Ta powder and Cr powder in certain proportion, setting in nylon tank and mixing with Si3N4And (3) taking the balls as grinding balls, using absolute ethyl alcohol or acetone as a ball milling medium, mixing for 1-10 h on a planetary ball mill, and then performing rotary evaporation, drying and sieving to obtain mixed powder with the particle size of 1-30 mu m, namely the brazing filler metal for silicon carbide connection.
The application of the brazing filler metal for silicon carbide connection in connecting silicon carbide ceramics comprises the following steps: dissolving nitrocellulose, octyl acetate and the brazing filler metal for connecting silicon carbide in acetone or alcohol, stirring uniformly to form slurry, uniformly coating the slurry on the surface of the polished silicon carbide ceramic, clamping two silicon carbide ceramic surfaces coated with the slurry relatively by using a clamp, and then carrying out subsequent heat treatment for connection.
The purity of the silicon carbide ceramic is 99-100%, and the density is 99.9-100%; the mass ratio of the nitrocellulose to the octyl acetate to the brazing filler metal for connecting the silicon carbide is 1:5: 5; the stirring is carried out for 5-15 min, preferably 15min by adopting a magnetic stirrer; the heat treatment is carried out under an air atmosphere or under vacuum.
The heat treatment is to be carried out by placing the mixture in a heat treatment furnace, heating the mixture to 600-900 ℃ at a speed of 5-15 ℃/min, heating the mixture to 1000-1400 ℃ at a speed of 1-10 ℃/min, and keeping the temperature for 5-30 min. Preferably, the heat treatment is to heat the mixture to 800 ℃ at a temperature of 10 ℃/min in a heat treatment furnace, heat the mixture to 1200 ℃ at a temperature of 4 ℃/min, and then keep the temperature for 15 min.
The thickness of the connecting layer of the connected silicon carbide ceramic is 5-50 mu m, the shear strength at room temperature is 80-150 MPa, and the leakage rate of the connecting piece is 0-1 multiplied by 10-5Pa·L/s。
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) the SiC ceramic can be connected without pressurization in the connection process; the connection process does not require harsh connection environment, and even the connection can be realized directly in the air; the requirement of high vacuum is overcome, and the cost and the limitation of connection are reduced;
(2) because Nb has strong activity, Nb is easy to interdiffuse and react with SiC ceramic at high temperature; nb has similar properties to Ta and has a thermal expansion coefficient of 7.5X 10-6K, coefficient of thermal expansion of SiC ceramic (4.7X 10)-6/K) are relatively close, so that Ta/Nb is taken as an intermediate layer, the distribution of the thermal stress of the joint can be improved, the generation of the thermal stress is reduced, meanwhile, the addition of metal Cr powder can improve the corrosion resistance of the connecting layer, and the thermal expansion coefficient is 6.5 multiplied by 10-6The thermal expansion coefficients of the/K and the SiC ceramic are relatively close. Thus, Nb1-x-yTayCrxWhen the silicon carbide ceramic is used as a connecting layer, the silicon carbide ceramic can be connected, the thermal stress of the connecting piece is reduced, and the corrosion resistance of the connecting piece can be improved.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
The purity of Nb powder, Ta powder and Cr powder used in the following examples is 99-100%; the purity of the silicon carbide ceramic is 99-100%, and the density is 99.9-100%.
Example 1
(1) The Nb powder, the Ta powder and the Cr powder are mixed according to the mass fraction ratio of 80%: 15%: 5 percent of the mixture is mixed and put into a nylon tank, and Si is selected3N4And (3) ball milling, mixing the balls on a planetary ball mill for 18 hours by using acetone or alcohol as a solvent, and then performing rotary evaporation, drying and sieving to obtain mixed powder with the particle size of 1-30 microns, namely the brazing filler metal for connecting the silicon carbide. Dissolving nitrocellulose, octyl acetate and the mixed powder in alcohol according to the mass ratio of 1:5:5, stirring for 15min by using a magnetic stirrer, and stirring into paste to form slurry.
(2) Cutting the SiC ceramic into ceramic wafers of 10mm by 3mm, polishing the ceramic wafers by using polishing paste until the ceramic wafers have a mirror surface effect, wherein no obvious scratch is formed under a microscope; and (2) uniformly coating the slurry obtained in the step (1) on the surfaces of the two polished silicon carbide ceramics.
(3) And (3) using a boron nitride clamp to relatively fix and clamp the surfaces of the two pieces of silicon carbide ceramics coated with the slurry.
(4) The mixture is put into a muffle furnace to be heated to 800 ℃ at a speed of 10 ℃/min, and then heated to 1000 ℃ at a speed of 4 ℃/min, and then the temperature is kept for 30 min.
The SiC ceramic prepared in the embodiment has a compact connecting layer, the thickness of the connecting layer is 20 μm, the shear strength at room temperature is 110MPa, and the leakage rate of the connecting piece is 1X 10-6Pa·L/s。
Example 2
(1) The Nb powder, the Ta powder and the Cr powder are mixed according to the mass fraction ratio of 90%: 5%: 5 percent. Proportioning, loading in nylon tank, and choosing Si3N4And (3) ball milling, mixing the balls on a planetary ball mill for 18 hours by using acetone or alcohol as a solvent, and then performing rotary evaporation, drying and sieving to obtain mixed powder with the particle size of 1-30 microns, namely the brazing filler metal for connecting the silicon carbide. Dissolving nitrocellulose, octyl acetate and the mixed powder in alcohol according to the mass ratio of 1:5:5, stirring for 15min by using a magnetic stirrer, and stirring into paste to form slurry.
(2) Cutting the SiC ceramic into ceramic wafers of 10mm by 3mm, polishing the ceramic wafers by using polishing paste until the ceramic wafers have a mirror surface effect, wherein no obvious scratch is formed under a microscope; and (2) uniformly coating the slurry obtained in the step (1) on the surfaces of the two polished silicon carbide ceramics.
(3) And (3) using a boron nitride clamp to relatively fix and clamp the surfaces of the two pieces of silicon carbide ceramics coated with the slurry.
(4) The mixture is put into a muffle furnace and heated to 600 ℃ at a speed of 10 ℃/min, and then heated to 1000 ℃ at a speed of 4 ℃/min, and then the temperature is kept for 5 min.
The SiC ceramic prepared in the embodiment has a compact connecting layer, the thickness of the connecting layer is 5 μm, the shear strength at room temperature is 80MPa, and the leakage rate of the connecting piece is 1X 10-6Pa·L/s。
Example 3
(1) The Nb powder, the Ta powder and the Cr powder are 70 percent by mass: 25%: 5 percent. Proportioning, loading in nylon tank, and choosing Si3N4And (3) ball milling, mixing the balls on a planetary ball mill for 18 hours by using acetone or alcohol as a solvent, and then performing rotary evaporation, drying and sieving to obtain mixed powder with the particle size of 1-30 microns, namely the brazing filler metal for connecting the silicon carbide. Mixing nitrocelluloseDissolving the octyl acetate and the mixed powder in alcohol according to the mass ratio of 1:5:5, stirring the mixture for 15min by using a magnetic stirrer, and stirring the mixture into paste to form slurry.
(2) Cutting the SiC ceramic into ceramic wafers of 10mm by 3mm, polishing the ceramic wafers by using polishing paste until the ceramic wafers have a mirror surface effect, wherein no obvious scratch is formed under a microscope; and (2) uniformly coating the slurry obtained in the step (1) on the surfaces of the two polished silicon carbide ceramics.
(3) And (3) using a boron nitride clamp to relatively fix and clamp the surfaces of the two pieces of silicon carbide ceramics coated with the slurry.
(4) The mixture is put into a muffle furnace to be heated to 800 ℃ at a speed of 10 ℃/min, and then heated to 1400 ℃ at a speed of 4 ℃/min, and then the temperature is kept for 5 min.
The SiC ceramic prepared in the example has a dense connecting layer, the thickness of the connecting layer is 50 μm, the shear strength at room temperature is 95MPa, and the leakage rate of the connecting piece is 1X 10-6Pa·L/s。
Example 4
(1) Mixing Nb powder, Ta powder and Cr powder according to the mass fraction ratio of 60%: 35%: 5 percent. Proportioning, loading in nylon tank, and choosing Si3N4And (3) ball milling, mixing the balls on a planetary ball mill for 18 hours by using acetone or alcohol as a solvent, and then performing rotary evaporation, drying and sieving to obtain mixed powder with the particle size of 1-30 microns, namely the brazing filler metal for connecting the silicon carbide. Dissolving nitrocellulose, octyl acetate and the mixed powder in alcohol according to the mass ratio of 1:5:5, stirring for 15min by using a magnetic stirrer, and stirring into paste to form slurry.
(2) Cutting the SiC ceramic into ceramic wafers of 10mm by 3mm, polishing the ceramic wafers by using polishing paste until the ceramic wafers have a mirror surface effect, wherein no obvious scratch is formed under a microscope; and (2) uniformly coating the slurry obtained in the step (1) on the surfaces of the two polished silicon carbide ceramics.
(3) And (3) using a boron nitride clamp to relatively fix and clamp the surfaces of the two pieces of silicon carbide ceramics coated with the slurry.
(4) The mixture is put into a muffle furnace to be heated to 900 ℃ at a speed of 10 ℃/min, and then heated to 1400 ℃ at a speed of 4 ℃/min, and then the temperature is kept for 30 min.
The SiC ceramic prepared in this example had a dense joint layerThe thickness is 20 μm, the shear strength at room temperature is 150MPa, and the leakage rate of the connecting piece is 1 × 10-7Pa·L/s。
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. The brazing filler metal for silicon carbide connection is characterized in that: the brazing filler metal is mixed powder with the grain diameter of 1-30 mu m, which is prepared by grinding and mixing 60-90%, 5-35% and 5% of Nb powder, Ta powder and Cr powder in percentage by mass.
2. The brazing filler metal for joining silicon carbide according to claim 1, wherein: the brazing filler metal is prepared by mixing 80%, 15% and 5% of Nb powder, Ta powder and Cr powder in percentage by mass.
3. The brazing filler metal for joining silicon carbide according to claim 1 or 2, wherein: the purities of the Nb powder, the Ta powder and the Cr powder are all 99-100%.
4. The method for preparing a brazing filler metal for silicon carbide joining according to claim 1, comprising the steps of: mixing Nb powder, Ta powder and Cr powder in certain proportion, setting in nylon tank and mixing with Si3N4And (3) taking the balls as grinding balls, using absolute ethyl alcohol or acetone as a ball milling medium, mixing for 1-10 h on a planetary ball mill, and then performing rotary evaporation, drying and sieving to obtain mixed powder with the particle size of 1-30 mu m, namely the brazing filler metal for silicon carbide connection.
5. The use of a braze for joining silicon carbide according to claim 1 for joining silicon carbide ceramics, wherein: the application comprises the following steps: dissolving nitrocellulose, octyl acetate and the brazing filler metal for connecting silicon carbide in acetone or alcohol, stirring uniformly to form slurry, uniformly coating the slurry on the surface of the polished silicon carbide ceramic, clamping two silicon carbide ceramic surfaces coated with the slurry relatively by using a clamp, and then carrying out subsequent heat treatment for connection.
6. Use according to claim 5, characterized in that: the purity of the silicon carbide ceramic is 99-100%, and the density is 99.9-100%; the mass ratio of the nitrocellulose to the octyl acetate to the brazing filler metal for connecting the silicon carbide is 1:5: 5; stirring for 5-15 min by using a magnetic stirrer; the heat treatment is carried out under an air atmosphere or under vacuum.
7. Use according to claim 5, characterized in that: the stirring time is 15 min.
8. Use according to claim 5, characterized in that: the heat treatment is to be carried out by placing the mixture in a heat treatment furnace, heating the mixture to 600-900 ℃ at a speed of 5-15 ℃/min, heating the mixture to 1000-1400 ℃ at a speed of 1-10 ℃/min, and keeping the temperature for 5-30 min.
9. Use according to claim 5, characterized in that: the heat treatment is to be placed in a heat treatment furnace to be heated to 800 ℃ at the speed of 10 ℃/min, and then to be heated to 1200 ℃ at the speed of 4 ℃/min, and then to be kept for 15 min.
10. Use according to claim 5, characterized in that: the thickness of the connecting layer of the connected silicon carbide ceramic is 5-50 mu m, the shear strength at room temperature is 80-150 MPa, and the leakage rate of the connecting piece is 0-1 multiplied by 10-5 Pa·L/s。
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| CN109369208B true CN109369208B (en) | 2021-07-09 |
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| CN113185315B (en) * | 2021-03-29 | 2022-07-29 | 岭东核电有限公司 | Nuclear silicon carbide cladding rapid connection method, SiC cladding and application thereof |
| CN113402289A (en) * | 2021-05-08 | 2021-09-17 | 中广核研究院有限公司 | Silicon carbide cladding induction heating connection method and silicon carbide cladding |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1263692A1 (en) * | 2000-03-14 | 2002-12-11 | Commissariat A L'energie Atomique | Method for assembling parts made of materials based on sic by non-reactive refractory brazing, brazing composition, and joint and assembly obtained by said method |
| JP2002372029A (en) * | 2001-06-12 | 2002-12-26 | Tdk Corp | Connecting rod coated with dlc |
| CN1513812A (en) * | 2003-06-26 | 2004-07-21 | 哈尔滨工业大学 | Ceramic particle reinforced composite brazing alloy used for ceramic soldering |
| CN101279408A (en) * | 2007-04-04 | 2008-10-08 | 通用电气公司 | Brazing formulation and method of making the same |
| CN101439447A (en) * | 2008-12-30 | 2009-05-27 | 沈阳黎明航空发动机(集团)有限责任公司 | Solder |
| CN103341675A (en) * | 2013-07-30 | 2013-10-09 | 哈尔滨工业大学 | Method for braze welding of Cf/SiC composite material and metal Nb by using Ti-Co-Nb brazing filler metal |
| CN105014257A (en) * | 2014-04-29 | 2015-11-04 | 中国科学院上海硅酸盐研究所 | Brazing filler metal for SiC base composite material connection |
-
2018
- 2018-10-31 CN CN201811289729.XA patent/CN109369208B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1263692A1 (en) * | 2000-03-14 | 2002-12-11 | Commissariat A L'energie Atomique | Method for assembling parts made of materials based on sic by non-reactive refractory brazing, brazing composition, and joint and assembly obtained by said method |
| JP2002372029A (en) * | 2001-06-12 | 2002-12-26 | Tdk Corp | Connecting rod coated with dlc |
| CN1513812A (en) * | 2003-06-26 | 2004-07-21 | 哈尔滨工业大学 | Ceramic particle reinforced composite brazing alloy used for ceramic soldering |
| CN101279408A (en) * | 2007-04-04 | 2008-10-08 | 通用电气公司 | Brazing formulation and method of making the same |
| CN101439447A (en) * | 2008-12-30 | 2009-05-27 | 沈阳黎明航空发动机(集团)有限责任公司 | Solder |
| CN103341675A (en) * | 2013-07-30 | 2013-10-09 | 哈尔滨工业大学 | Method for braze welding of Cf/SiC composite material and metal Nb by using Ti-Co-Nb brazing filler metal |
| CN105014257A (en) * | 2014-04-29 | 2015-11-04 | 中国科学院上海硅酸盐研究所 | Brazing filler metal for SiC base composite material connection |
| CN105014257B (en) * | 2014-04-29 | 2017-08-11 | 中国科学院上海硅酸盐研究所 | A kind of solder connected for SiC based composites |
Non-Patent Citations (5)
| Title |
|---|
| A reaction forming method for joining of silicon carbide-based ceramics;Singh M;《Scripta Mater》;19971231;第37卷;全文 * |
| Bonding mechanisms and shear properties of alumina ceramic/stainless steel brazed joint;Liu GW;《J Mater Eng Perform》;20111231;第20卷;全文 * |
| SiC/SiC and SiC/Kovar joining by Ni-Si and Mo interlayers;G.W.Liu;《J Mater Sci》;20101231;全文 * |
| 采用Ni-Cr-Nb焊料连接再结晶SiC陶瓷;毛样武等;《稀有金属材料与工程》;20090430;第38卷;全文 * |
| 陶瓷及陶瓷基复合材料高温钎料的研究现状与进展;熊华平等;《焊接》;20081130(第11期);全文 * |
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