CN112296889A - Thinned porous ceramic composite bonding agent for SIC wafer, diamond tool bit, grinding wheel and manufacturing method of grinding wheel - Google Patents
Thinned porous ceramic composite bonding agent for SIC wafer, diamond tool bit, grinding wheel and manufacturing method of grinding wheel Download PDFInfo
- Publication number
- CN112296889A CN112296889A CN202011231728.7A CN202011231728A CN112296889A CN 112296889 A CN112296889 A CN 112296889A CN 202011231728 A CN202011231728 A CN 202011231728A CN 112296889 A CN112296889 A CN 112296889A
- Authority
- CN
- China
- Prior art keywords
- diamond
- grinding wheel
- parts
- bonding agent
- tool bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
- B24D3/18—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings for porous or cellular structure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention provides a thinned porous ceramic composite bonding agent for a SIC wafer, a diamond tool bit, a grinding wheel and a manufacturing method thereof, and the composite ceramic bonding agent for the SIC wafer comprises the following raw materials in parts by weight: 25-60 parts of auxiliary abrasive, 15-45 parts of pore-forming agent and 5-15 parts of pore-forming agent, and also discloses a diamond tool bit, a grinding wheel and a manufacturing method thereof, so as to solve the technical problems that pores are easy to block in the grinding process of the grinding wheel, the grinding capacity is poor and the grinding efficiency is low due to the fact that the porosity of the existing ceramic diamond grinding wheel is too low, the pores are small, the communication porosity is low and the like. The grinding wheel is used for grinding the SIC wafer, can effectively solve the problem that air holes are easy to block in the grinding process of the grinding wheel, and has the characteristics of good grinding capacity and high grinding efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductor chip manufacturing, in particular to a thinned porous ceramic composite bonding agent for a SIC wafer, a diamond tool bit, a grinding wheel and a manufacturing method thereof.
Background
With the rapid development of semiconductor manufacturing technology, the application field is continuously widened, and especially the gradual popularization and application of 5G technology, the miniaturization, ultra-thinness, high capacity and high stability of chips are necessary requirements for the development of semiconductor technology in the future. On the premise that silicon materials are used as main materials of second-generation semiconductors and theoretical performances of the silicon materials are close to the limit, silicon carbide is used as a main material of third-generation semiconductors, and the silicon carbide is accelerated to popularize and apply in the field of semiconductors by virtue of excellent performances of the silicon carbide. As a wide bandgap semiconductor material, silicon carbide not only has high breakdown electric field strength, but also has good thermal stability; the high-temperature resistant high-frequency high-power device has the characteristics of high carrier saturation drift velocity, high thermal conductivity and the like, and can be applied to the field which is difficult to be met by silicon device components. Performance comparison of SIC to SI: the high-voltage resistance is 10 times that of SI, the forbidden band width is three times that of SI, the critical electric field is 12 times that of SI, the thermal conductivity is 3.5 times that of SI, and the high-temperature resistance is 5 times that of SI. The perfection of SIC materials and device fabrication techniques is therefore foreseen in the near future. Part of the SI material field is replaced by semiconductors made from SIC.
However, the silicon carbide material is a high-hardness and high-brittleness material second to diamond, and the data show that the hardness of the silicon carbide material is 1.5 times that of the silicon material, although the silicon carbide material has excellent performance, the processing difficulty is increased due to the high hardness of the silicon carbide material, and in the processing process of the silicon carbide wafer, the technical index requirements are extremely high, such as: TTV < 1.5um, coarse grinding Ra < 25nm, fine grinding Ra < 1.0nm efficiency: grinding efficiency: coarse grinding is more than 8um/min, and fine grinding is more than 1.5 um/min. The SIC wafer processed by the traditional diamond grinding wheel cannot meet the technical indexes. Due to the reasons, in the thinning processing quantitative production process of the silicon carbide wafer, the rejection rate is high, the efficiency is low, the processing quality is unstable, and the like. The SIC wafer is more than ten times of the SI wafer, and has excellent performance compared with the SI wafer, but the popularization and the application are directly influenced due to the overhigh price.
At present, the diamond grinding wheel is the only processing tool for thinning and processing the silicon carbide wafer. In a sense, the performance of the diamond grinding wheel determines the processing quality of the silicon carbide wafer and the processing cost of the silicon carbide wafer. The ceramic diamond grinding wheel used in the existing silicon carbide wafer thinning process has obvious defects and shortcomings, and is difficult to meet the requirement of high-precision silicon carbide wafer quantitative production. The concrete aspects are as follows: 1. the sintering temperature of the ceramic binder used is too high, typically exceeding 800 ℃. This can lead to local surface carbonization of the diamond at too high a temperature of the particles (beyond 700 ℃, the diamond begins to carbonize), reducing its strength. Thereby affecting the grinding performance and the service life of the grinding wheel and improving the processing cost. In addition, the high sintering temperature of the ceramic bond is often brought with too high hardness, which is unfavorable for the processing of SIC wafers with high hardness, and particularly, the wafers are easy to deform and scorch. 2. The diamond particles are not uniformly dispersed in the binder and have obvious aggregates. Especially micron-sized particles have large specific surface area, are particularly easy to agglomerate together, and are difficult to disperse in a common mixing mode. Since these particles are not dispersed and agglomerated, they are particularly prone to wafer scratching and waste during grinding. 3. Because the internal pores generated by the traditional pore-forming agent have irregular shapes, large pore size difference and ineffective control of porosity, particularly incomplete combustion volatilization and residues. This results in that the grinding wheel is easy to block due to insufficient chip-containing and cooling capacity of the air holes and the local grinding temperature is too high during grinding, which leads to surface burn of SIC wafer and waste product. On the other hand, if the porosity is too high, the strength and the wear resistance of the grinding wheel are directly affected, so that the grinding life of the grinding wheel is short, and the cost is increased.
Therefore, how to scientifically select the components and the proportion of the ceramic bond so as to reduce the sintering temperature of the bond and protect the diamond particles from the maximum strength; how to select and innovate a process and a method for uniformly mixing superfine-granularity multi-component powder; how to develop and scientifically use pore-forming agents of the ceramic bond grinding wheel; the three aspects are the key technical problems for manufacturing the diamond grinding wheel used for thinning and processing the semiconductor material, especially the high-hardness silicon carbide wafer.
Disclosure of Invention
The invention aims to solve the technical problem of providing a thinned porous ceramic composite bonding agent, a diamond and a grinding wheel for a SIC wafer and a manufacturing method thereof, so as to solve the following problems in the conventional manufacturing process: (1) the sintering temperature of the ceramic bond is too high, resulting in carbonization of the diamond particles, resulting in loss of strength thereof. And the strength is too high, so that the method is not suitable for thinning and processing the SIC wafer with high hardness. (2) The agglomeration phenomenon of the ultrafine diamond particles (with the particle diameter of less than 20 um) cannot be fully and uniformly dispersed in the ceramic bond, so that the workpiece is scratched due to the presence of the agglomerates in the grinding process, and the rejection rate is too high. (3) The air holes are irregular in shape and uneven in size, and the porosity is difficult to control quantitatively, so that the technical problems that the air holes are easy to block in the grinding process of the grinding wheel, the grinding capacity is poor and the grinding efficiency is low are caused.
In order to solve the technical problems, the invention adopts the following technical scheme:
designing a composite ceramic bonding agent for SIC wafers, which comprises the following raw materials in parts by weight: the feed comprises the following raw materials in parts by weight: 25-60 parts of ceramic bonding agent, 15-45 parts of auxiliary abrasive and 5-15 parts of pore-forming agent.
A porous ceramic composite bonding agent diamond tool bit for manufacturing SIC wafer diamond grinding wheels comprises the following raw materials in parts by weight: 25-60 parts of ceramic bonding agent, 15-45 parts of auxiliary abrasive, 20-50 parts of diamond micro powder and 5-15 parts of pore-forming agent.
Preferably, the ceramic bonding agent comprises the following raw materials in parts by weight: 20-28 parts of silicon dioxide, 10-20 parts of aluminum oxide, 4-8 parts of potassium carbonate, 10-25 parts of sodium carbonate and 30-50 parts of boric acid, wherein the auxiliary abrasive is silicon carbide micro powder with the particle size of 1-1.5 um, and the pore-forming agent is spherical polymethyl methacrylate with the particle size of 30-100 um.
A preparation method of a porous ceramic composite bonding agent diamond tool bit comprises the following steps:
1) uniformly mixing the ceramic bond, the auxiliary abrasive, the diamond micro powder, the zirconia ceramic ball and the absolute ethyl alcohol, wherein the zirconia ceramic ball and the absolute ethyl alcohol are used as mixing media;
2) dehydrating and drying the mixed material in the step 1);
3) adding the powder prepared in the step 2) into a pore-forming agent, repeatedly sieving and uniformly mixing;
4) putting the uniform material prepared in the step 3) into a die for cold press molding to obtain a green body of the diamond tool bit;
5) and (4) placing the green body obtained in the step 4) into a sintering furnace for sintering, and naturally cooling to room temperature to obtain the diamond tool bit.
Preferably, in step 1), the mixture of the ceramic bond, the auxiliary abrasive and the diamond micropowder: ceramic ball: the volume ratio of the absolute ethyl alcohol is 1-2: 2-4: 6-8; in the step 2), drying and dehydrating for 8-12 hours at the temperature of 75-85 ℃; in the step 4), the pressure of cold press molding is controlled to be 8-12 MPa.
In the step 5), the temperature rise speed is controlled to be 5-8 ℃ per minute during sintering, the sintering temperature is controlled to be 660-700 ℃, and the heat preservation time is 3-5 hours.
According to the porous ceramic composite bonding agent diamond tool bit prepared by the method, the diamond particle size of the diamond tool bit is 6-8 um, and the porosity is 20-60 vol%.
A preparation method of a porous ceramic composite bonding agent diamond grinding wheel comprises the following steps:
1) uniformly bonding the prepared diamond tool bit on the prepared grinding wheel base by using a bonding agent, and naturally curing for at least 24 hours at room temperature;
2) and (2) performing end face finish machining on the diamond grinding wheel obtained in the step 1) to obtain the porous ceramic composite bonding agent diamond grinding wheel.
Preferably, the binder is a glue solution formed by uniformly mixing epoxy resin and Cu powder, and the volume ratio of the epoxy resin to the Cu powder is (8-10): 1.
preferably, the diamond grinding wheel comprises a grinding wheel base and a plurality of diamond tips adhered to the circumferential surface of the grinding wheel base.
Compared with the prior art, the invention has the beneficial technical effects that:
1. the ceramic bonding agent adopted by the invention is a low-temperature ceramic bonding agent prepared by special raw materials and proportion, and can reduce the sintering temperature by more than 100 ℃ compared with the traditional ceramic bonding agent widely used at present. The sintering temperature of the traditional ceramic bond is generally over 800 ℃; the method has the advantages that energy is saved, efficiency is improved, and the performance of the diamond is protected better. Since the higher the sintering temperature, the more damaging the strength of the diamond particles.
2. The invention firstly mixes the ceramic bond, the diamond micro powder and the auxiliary grinding material in the zirconia ceramic ball and the absolute ethyl alcohol medium, and dehydrates and dries after mixing. Then adding pore-forming agent, and mixing by sieving method; the mixing mode of the wet method and the dry method solves the technical problem that ultrafine powder is easy to form aggregates due to large specific surface area. The superfine (grain diameter less than 20 um) diamond abrasive grains are highly and uniformly dispersed in the bonding agent, so that the performance consistency and the stability of the manufactured diamond grinding wheel are greatly improved.
3. The invention preferably takes spherical polymethyl methacrylate (PMMA) as pore-forming agent, and obtains more ideal pore-forming and grinding performance compared with the traditional pore-forming agent such as refined naphthalene, ammonium bicarbonate and the like. The size of the air holes can be accurately controlled within the range of 6um to 120um by controlling the diameter of the PMMA microspheres. By controlling the addition amount of PMMA, the porosity can be accurately controlled within the range of 20-60 Vol%. Because the shape of PMMA is spherical, the PMMA is particularly easy to uniformly disperse in the bonding agent, thereby ensuring the uniformity of air holes in the grinding wheel. The pores obtained by using the traditional pore-forming agents such as refined naphthalene, ammonium bicarbonate and the like have irregular shapes, uneven sizes, uneven distribution and difficult accurate control of porosity. Under the condition of the same diamond granularity (2000 #) and the consistency of other process parameters, the SIC wafer is thinned by using the grinding wheel made of PMMA pore-forming agent, the Ra of the SIC wafer is less than 20nm, and the removal rate is more than 8 um/min. The Ra of the grinding wheel manufactured by using ammonium bicarbonate as a pore-forming agent is more than 50um, and the removal rate is less than 3 um/min.
4. The porous ceramic composite bond diamond grinding wheel for thinning and processing the silicon carbide wafer has the advantages that through the optimized selection of all components and the setting of technological parameters such as mixing, molding, sintering, finish machining and the like, the manufactured grinding wheel has good chip holding and cooling effects, and the grinding wheel is good in both continuous self-sharpening property and wear resistance. Is particularly suitable for the high-quality and high-efficiency processing of the silicon carbide wafer with high hardness by thickness reduction.
Drawings
FIG. 1 is a microscopic image of a diamond grinding wheel 250 produced by the present invention;
FIG. 2 is a microscope image of a diamond grinding wheel 250 times produced by using a conventional pore-forming agent.
Detailed Description
The following examples are given to illustrate specific embodiments of the present invention, but are not intended to limit the scope of the present invention in any way. The raw materials are all conventional commercial industrial raw materials if not specifically indicated; the processing and manufacturing methods are conventional methods unless otherwise specified.
The invention mainly aims at a porous ceramic composite bonding agent diamond tool bit for manufacturing a SIC wafer precision thinning processing diamond grinding wheel.
Example 1: a porous ceramic bond diamond grinding wheel for SIC wafer thinning processing comprises a grinding wheel base and a plurality of diamond tool bits adhered to the upper circumferential surface of the grinding wheel base.
The diamond tool bit of the porous ceramic bond grinding wheel for thinning and processing the SIC wafer comprises the following raw materials in percentage by weight: 25% of ceramic binder, 45% of diamond micropowder with the particle size of 6-8 um, 25% of green silicon carbide micropowder with the particle size of 1-1.5 um and 5% of spherical polymethyl methacrylate with the average particle size of 40 um. Wherein the ceramic bond is composed of the following raw materials by weight percent: 29% of silicon dioxide, 10% of aluminum oxide, 6% of potassium carbonate, 10% of sodium carbonate and 45% of boric acid.
The preparation method of the porous ceramic composite bonding agent diamond grinding wheel comprises the following steps:
the method comprises the following steps: putting the ceramic bond, the diamond micropowder and the green silicon carbide micropowder into a mixing tank of a planetary mixer for wet mixing, and mixing for 2.0 hours after taking zirconia ceramic balls and absolute ethyl alcohol as mixing media;
step two: pouring the slurry obtained in the step one into a clean porcelain plate for dehydration and drying, wherein the drying temperature is 80 ℃, and the drying and heat preservation time is 12 hours;
step three: adding a pore-forming agent into the prepared powder, and repeatedly passing through a 120-mesh sieve for four times to obtain a uniformly mixed mixture;
step four: putting the uniform material prepared in the step three into a die, and carrying out cold press molding under the pressure of 10Mp to obtain a green body of the diamond tool bit;
step five: and putting the green body obtained in the step four into a sintering furnace for sintering. Controlling the heating speed to be 6 ℃/min during sintering, controlling the sintering temperature to be 680 ℃, keeping the temperature for 4 hours, and naturally cooling to room temperature to obtain the diamond tool bit;
step six: uniformly bonding the prepared diamond tool bit in a tool bit groove of a base on the prepared grinding wheel base by using a bonding agent, and naturally curing for at least 24 hours at room temperature; wherein the binder is formed by mixing epoxy resin and copper powder, and the volume ratio of the epoxy resin to the copper powder is 10: 1. the dosage is based on the thickness of the coating of the bonding surface being about 0.1 mm;
step seven: and then, finishing and finely machining the outer circle, the inner circle and the end face of the grinding wheel to obtain the porous ceramic composite bonding agent diamond grinding wheel.
The porous ceramic composite bond diamond grinding wheel obtained in the embodiment is applied to a SIC wafer thickness reduction process, the maximum removal rate is 25um/min, the TTV is less than 1.2um, the surface roughness Ra is less than 20nm, and the average service life is 1000 pieces. Can realize the high-quality rough grinding processing of the SIC wafer.
Example 2: a porous ceramic bond diamond grinding wheel for SIC wafer thinning processing comprises a grinding wheel base and a plurality of diamond tool bits adhered to the upper circumferential surface of the grinding wheel base.
The diamond tool bit of the porous ceramic bond grinding wheel for thinning and processing the SIC wafer comprises the following raw materials in percentage by weight: 35% of ceramic bond, 35% of diamond micropowder with the grain size of 6-8 um, 20% of green silicon carbide micropowder with the grain size of 1-1.5 um and 10% of spherical polymethyl methacrylate with the average grain size of 40 um. Wherein the ceramic bond is composed of the following raw materials by weight percent: 26% of silicon dioxide, 12% of aluminum oxide, 7% of potassium carbonate, 15% of sodium carbonate and 40% of boric acid.
The preparation method of the porous ceramic composite bonding agent diamond grinding wheel comprises the following steps:
the method comprises the following steps: putting the ceramic bond, the diamond micropowder and the green silicon carbide micropowder into a mixing tank of a planetary mixer for wet mixing, and mixing for 2.0 hours after taking zirconia ceramic balls and absolute ethyl alcohol as mixing media;
step two: and (4) pouring the slurry obtained in the step one into a clean porcelain plate for dehydration and drying. The drying temperature is 80 ℃, and the drying and heat preservation time is 12 hours;
step three: adding a pore-forming agent into the prepared powder, and repeatedly passing through a 120-mesh sieve for four times to obtain a uniformly mixed mixture;
step four: putting the uniform material prepared in the step three into a die, and carrying out cold press molding under the pressure of 10Mp to obtain a green body of the diamond tool bit;
step five: and putting the green body obtained in the step four into a sintering furnace for sintering. Controlling the heating speed to be 6 ℃/min during sintering, controlling the sintering temperature to be 690 ℃, keeping the temperature for 4 hours, and naturally cooling to room temperature to obtain the diamond tool bit;
step six: uniformly bonding the prepared diamond tool bit in a tool bit groove of a base on the prepared grinding wheel base by using a bonding agent, and naturally curing for at least 24 hours at room temperature; wherein the binder is formed by mixing epoxy resin and copper powder, and the volume ratio of the epoxy resin to the copper powder is 9: 1; the dosage is based on the thickness of the coating of the bonding surface being about 0.1 mm;
step seven: and then, finishing and finely machining the outer circle, the inner circle and the end face of the grinding wheel to obtain the porous ceramic composite bonding agent diamond grinding wheel.
The porous ceramic composite bond diamond grinding wheel obtained in the embodiment is applied to a SIC wafer thickness reduction process, the maximum removal rate is 30um/min, TTV is less than 1.2um, surface roughness Ra is less than 10nm, and the average service life is 1500 pieces. Can realize the high-quality rough grinding processing of the SIC wafer.
Example 3: a porous ceramic bond diamond grinding wheel for SIC wafer thinning processing comprises a grinding wheel base and a plurality of diamond tool bits adhered to the upper circumferential surface of the grinding wheel base.
The diamond tool bit of the porous ceramic bond grinding wheel for thinning and processing the SIC wafer comprises the following raw materials in percentage by weight: 45% of ceramic binder, 25% of diamond micropowder with the grain size of 6-8 um, 15% of green silicon carbide micropowder with the grain size of 1-1.5 um and 15% of spherical polymethyl methacrylate with the average grain size of 40 um. Wherein the ceramic bond is composed of the following raw materials by weight percent: 24% of silicon dioxide, 12% of aluminum oxide, 8% of potassium carbonate, 21% of sodium carbonate and 35% of boric acid.
The preparation method of the porous ceramic composite bonding agent diamond grinding wheel comprises the following steps:
the method comprises the following steps: putting the ceramic bond, the diamond micropowder and the green silicon carbide micropowder into a mixing tank of a planetary mixer for wet mixing, and mixing for 2.0 hours after taking zirconia ceramic balls and absolute ethyl alcohol as mixing media;
step two: and (4) pouring the slurry obtained in the step one into a clean porcelain plate for dehydration and drying. The drying temperature is 80 ℃, and the drying and heat preservation time is 12 hours;
step three: adding a pore-forming agent into the prepared powder, and repeatedly passing through a 120-mesh sieve for four times to obtain a uniformly mixed mixture;
step four: putting the uniform material prepared in the step three into a die, and carrying out cold press molding under the pressure of 10Mp to obtain a green body of the diamond tool bit;
step five: and putting the green body obtained in the step four into a sintering furnace for sintering. Controlling the heating speed to be 6 ℃/min during sintering, controlling the sintering temperature to be 680 ℃, keeping the temperature for 4 hours, and naturally cooling to room temperature to obtain the diamond tool bit;
step six: uniformly bonding the prepared diamond tool bit in a tool bit groove of a base on the prepared grinding wheel base by using a bonding agent, and naturally curing for at least 24 hours at room temperature; wherein the binder is formed by mixing epoxy resin and copper powder, and the volume ratio of the epoxy resin to the copper powder is 10: 1. the dosage is based on the thickness of the coating of the bonding surface being about 0.1 mm;
step seven: and then, finishing and finely machining the outer circle, the inner circle and the end face of the grinding wheel to obtain the porous ceramic composite bonding agent diamond grinding wheel.
The porous ceramic composite bond diamond grinding wheel obtained in the embodiment is applied to a SIC wafer thickness reduction process, the maximum removal rate is 15um/min, the TTV is less than 1.2um, the surface roughness Ra is less than 20nm, and the average service life is 800 pieces. Can realize the high-quality rough grinding processing of the SIC wafer.
Example 4: a porous ceramic bond diamond grinding wheel for SIC wafer thinning processing comprises a grinding wheel base and a plurality of diamond tool bits adhered to the upper circumferential surface of the grinding wheel base.
The diamond tool bit of the porous ceramic bond grinding wheel for thinning and processing the SIC wafer comprises the following raw materials in percentage by weight: 50% of ceramic binder, 20% of diamond micropowder with the granularity of 6-8 um, 25% of green silicon carbide micropowder with the granularity of 1-1.5 um and 5% of spherical polymethyl methacrylate with the average granularity of 40 um. Wherein the ceramic bond is composed of the following raw materials by weight percent: 20% of silicon dioxide, 12% of aluminum oxide, 8% of potassium carbonate, 25% of sodium carbonate and 35% of boric acid.
The preparation method of the porous ceramic composite bonding agent diamond grinding wheel comprises the following steps:
the method comprises the following steps: putting the ceramic bond, the diamond micropowder and the green silicon carbide micropowder into a mixing tank of a planetary mixer for wet mixing, and mixing for 2.0 hours after taking zirconia ceramic balls and absolute ethyl alcohol as mixing media;
step two: and (4) pouring the slurry obtained in the step one into a clean porcelain plate for dehydration and drying. The drying temperature is 80 ℃, and the drying and heat preservation time is 12 hours;
step three: adding a pore-forming agent into the prepared powder, and repeatedly passing through a 120-mesh sieve for four times to obtain a uniformly mixed mixture;
step four: putting the uniform material prepared in the step three into a die, and carrying out cold press molding under the pressure of 10Mp to obtain a green body of the diamond tool bit;
step five: and putting the green body obtained in the step four into a sintering furnace for sintering. Controlling the heating speed to be 6 ℃/min during sintering, controlling the sintering temperature to be 660 ℃, keeping the temperature for 4 hours, and naturally cooling to room temperature to obtain the diamond tool bit;
step six: uniformly bonding the prepared diamond tool bit in a tool bit groove of a base on the prepared grinding wheel base by using a bonding agent, and naturally curing for at least 24 hours at room temperature; wherein the binder is formed by mixing epoxy resin and copper powder, and the volume ratio of the epoxy resin to the copper powder is 10: 1; the dosage is based on the thickness of the coating of the bonding surface being about 0.1 mm;
step seven: and then, finishing and finely machining the outer circle, the inner circle and the end face of the grinding wheel to obtain the porous ceramic composite bonding agent diamond grinding wheel.
The porous ceramic composite bond diamond grinding wheel obtained in the embodiment is applied to a SIC wafer thickness reduction process, the maximum removal rate is 10um/min, the TTV is less than 1.2um, the surface roughness Ra is less than 20nm, and the average service life is 1000 pieces. Can realize the high-quality rough grinding processing of the SIC wafer.
Example 5: a composite ceramic bonding agent for SIC wafers comprises the following raw materials in parts by weight: 30 parts of ceramic bond, 30 parts of auxiliary abrasive and 10 parts of pore-forming agent, wherein the ceramic bond comprises the following raw materials in parts by weight: 20-28 parts of silicon dioxide, 10-20 parts of aluminum oxide, 4-8 parts of potassium carbonate, 10-25 parts of sodium carbonate and 30-50 parts of boric acid; the auxiliary grinding material is silicon carbide micro powder, the particle size of the silicon carbide micro powder is 1-1.5 um, and the pore-forming agent is spherical polymethyl methacrylate and the particle size of the pore-forming agent is 30-100 um.
Example 6: a porous ceramic composite bond diamond tool bit for manufacturing SIC wafer diamond grinding wheels comprises: the feed comprises the following raw materials in parts by weight: 25-60 parts of ceramic bond, 15-45 parts of auxiliary abrasive, 20-50 parts of diamond micro powder and 5-15 parts of pore-forming agent, wherein the ceramic bond comprises the following raw materials in parts by weight: 20-28 parts of silicon dioxide, 10-20 parts of aluminum oxide, 4-8 parts of potassium carbonate, 10-25 parts of sodium carbonate and 30-50 parts of boric acid; the auxiliary grinding material is silicon carbide micro powder with the particle size of 1-1.5 um, and the pore-forming agent is spherical polymethyl methacrylate with the particle size of 30-100 um.
Effect example 1
The picture of the porous vitrified bond diamond grinding wheel obtained by the method in example 1 under the microscope of 250 times is shown in figure 1, the comparative example is the grinding wheel produced by the traditional process method, and the picture under the microscope of 250 times is shown in figure 2. As can be seen from fig. 1 and 2:
as can be seen from figure 1, in the diamond grinding wheel tool bit structure produced by the invention, the air holes are spherical, are uniformly distributed and have relatively uniform sizes. The grinding wheel has very important functions of improving the grinding performance of the grinding wheel, such as blockage avoidance, good self-sharpening performance, strong cooling chip capacity and the like. The maximum removal rate of the grinding wheel reaches 25um/min, TTV is less than 1.2um, Ra is less than 20nm, and the service life is more than 1000 pieces.
As can be seen in FIG. 2, the pores obtained by the conventional pore-forming agent are mostly irregular, have large size differences and are not uniformly distributed. When the high-hardness SIC wafer is used, blockage, poor self-sharpening performance, insufficient cooling capacity and chip containing capacity can be caused, and further serious defects of high temperature, deformation, splintering and the like of a grinding area are caused, so that the high-hardness SIC wafer cannot be processed.
The present invention has been described in detail with reference to the drawings and examples, but those skilled in the art will appreciate that the present invention is not limited thereto. It will be understood that various changes in the specific parameters of the above embodiments may be made without departing from the spirit of the invention, and that many specific embodiments are possible, all of which are common variations of the invention and will not be described in detail herein.
Claims (10)
1. The composite ceramic bonding agent for the SIC wafer is characterized by comprising the following raw materials in parts by weight: 25-60 parts of ceramic bonding agent, 15-45 parts of auxiliary abrasive and 5-15 parts of pore-forming agent.
2. A porous ceramic composite bonding agent diamond tool bit for manufacturing SIC wafer diamond grinding wheels is characterized by comprising the following raw materials in parts by weight: 25-60 parts of ceramic bonding agent, 15-45 parts of auxiliary abrasive, 20-50 parts of diamond micro powder and 5-15 parts of pore-forming agent.
3. The porous ceramic bond or diamond tool tip for SIC wafers of claim 1 or 2 wherein the ceramic bond comprises the following raw materials in parts by weight: 20-28 parts of silicon dioxide, 10-20 parts of aluminum oxide, 4-8 parts of potassium carbonate, 10-25 parts of sodium carbonate and 30-50 parts of boric acid, wherein the auxiliary abrasive is silicon carbide micro powder with the particle size of 1-1.5 um, and the pore-forming agent is spherical polymethyl methacrylate with the particle size of 30-100 um.
4. A preparation method of a porous ceramic composite bonding agent diamond tool bit is characterized by comprising the following steps:
1) uniformly mixing the ceramic bond, the auxiliary abrasive, the diamond micro powder, the zirconia ceramic ball and the absolute ethyl alcohol according to claim 2, wherein the zirconia ceramic ball and the absolute ethyl alcohol are mixing media;
2) dehydrating and drying the mixed material in the step 1);
3) adding the powder prepared in the step 2) into a pore-forming agent, repeatedly screening and uniformly mixing;
4) putting the uniform material prepared in the step 3) into a die for cold press molding to obtain a green body of the diamond tool bit;
5) and (4) placing the green body obtained in the step 4) into a sintering furnace for sintering, and naturally cooling to room temperature to obtain the diamond tool bit.
5. The method for manufacturing the porous ceramic composite bond diamond tool bit according to claim 4, wherein in step 1), the mixture of the ceramic bond, the auxiliary abrasive and the diamond micro powder: ceramic ball: the volume ratio of the absolute ethyl alcohol is 1-2: 2-4: 6-8; in the step 2), drying and dehydrating for 8-12 hours at the temperature of 75-85 ℃; in the step 4), the pressure of cold press molding is controlled to be 8-12 MPa.
6. The method for manufacturing the porous ceramic composite bonding agent diamond tool bit according to claim 4, wherein in the step 5), the temperature rise speed is controlled to be 5-8 ℃ per minute during sintering, the sintering temperature is controlled to be 660-700 ℃, and the heat preservation time is 3-5 hours.
7. A porous ceramic composite bond diamond tip as prepared in claim 4, wherein the diamond particle size of the diamond tip is 6 to 8 μm, and the porosity is 20 to 60 vol%.
8. The preparation method of the porous ceramic composite bonding agent diamond grinding wheel is characterized by comprising the following steps:
uniformly bonding the diamond segments prepared in claim 4 on the prepared grinding wheel base by using a bonding agent, and naturally curing for at least 24 hours at room temperature;
and (2) performing end face finish machining on the diamond grinding wheel obtained in the step 1) to obtain the porous ceramic composite bonding agent diamond grinding wheel.
9. The preparation method of the porous ceramic composite bonding agent diamond grinding wheel according to claim 8, wherein the bonding agent is a uniformly mixed glue solution of epoxy resin and Cu powder, and the volume ratio of the epoxy resin to the Cu powder is 8-10: 1.
10. a perforated thinned diamond wheel for SIC wafers comprising a wheel base and a plurality of diamond segments according to claim 5 adhered to the circumferential surface of the wheel base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011231728.7A CN112296889B (en) | 2020-11-06 | 2020-11-06 | Thinned porous ceramic composite bonding agent for SIC wafer, diamond tool bit, grinding wheel and manufacturing method of grinding wheel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011231728.7A CN112296889B (en) | 2020-11-06 | 2020-11-06 | Thinned porous ceramic composite bonding agent for SIC wafer, diamond tool bit, grinding wheel and manufacturing method of grinding wheel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112296889A true CN112296889A (en) | 2021-02-02 |
| CN112296889B CN112296889B (en) | 2021-11-09 |
Family
ID=74326471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011231728.7A Active CN112296889B (en) | 2020-11-06 | 2020-11-06 | Thinned porous ceramic composite bonding agent for SIC wafer, diamond tool bit, grinding wheel and manufacturing method of grinding wheel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112296889B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113788680A (en) * | 2021-09-30 | 2021-12-14 | 江苏赛扬精工科技有限责任公司 | Nano ceramic bond cBN pore grinding wheel and preparation method thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101913122A (en) * | 2010-07-21 | 2010-12-15 | 安泰科技股份有限公司 | Method for preparing ceramic bond super-hard abrasive tool |
| CN102837266A (en) * | 2012-08-29 | 2012-12-26 | 天津大学 | Ceramic bond CBN (Cubic Boron Nitride) abrasive wheel for double end surface grinding |
| CN103551971A (en) * | 2013-10-28 | 2014-02-05 | 博深工具股份有限公司 | Ceramic binding agent for ceramic grinding block and preparation method thereof |
| CN103753413A (en) * | 2014-01-10 | 2014-04-30 | 苏州赛力精密工具有限公司 | Peripheral edge grinding wheel for machining PCBN (polycrystalline cubic boron nitride) blades |
| CN104476417A (en) * | 2014-12-15 | 2015-04-01 | 普瑞思(厦门)精密工具有限公司 | Diamond wheel employing ceramic binding agent |
| CN106078537A (en) * | 2016-06-22 | 2016-11-09 | 郑州大学 | Devitrified glass bonding agent for extra hard material grinding wheel and preparation method thereof, extra hard material grinding wheel and preparation method thereof, composite wheel |
| CN106392908A (en) * | 2016-05-30 | 2017-02-15 | 广东工业大学 | Diamond grinding wheel with ceramic binders and production method thereof |
| TW201741077A (en) * | 2016-04-04 | 2017-12-01 | Kure Grinding Wheel Co Ltd | Ceramic bonded super-abrasive grinding wheel comprising spherical pores having an average pore diameter of 250 to 600 [mu]m that are dispersedly disposed in the super-abrasive layer |
| CN107791163A (en) * | 2017-11-21 | 2018-03-13 | 常州市好利莱光电科技有限公司 | A kind of preparation method of the durable porous skive of high intensity |
| CN107857596A (en) * | 2017-10-22 | 2018-03-30 | 桂林理工大学 | A kind of preparation method for improving microwave-medium ceramics quality factor |
| CN208262635U (en) * | 2018-05-03 | 2018-12-21 | 河南科恩超硬材料技术有限公司 | Grinding wheel is thinned in ceramic bond diamond |
| CN111018540A (en) * | 2020-01-14 | 2020-04-17 | 山东建筑大学 | High-strength boron nitride ceramic composite material based on low-temperature hot-pressing sintering |
-
2020
- 2020-11-06 CN CN202011231728.7A patent/CN112296889B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101913122A (en) * | 2010-07-21 | 2010-12-15 | 安泰科技股份有限公司 | Method for preparing ceramic bond super-hard abrasive tool |
| CN102837266A (en) * | 2012-08-29 | 2012-12-26 | 天津大学 | Ceramic bond CBN (Cubic Boron Nitride) abrasive wheel for double end surface grinding |
| CN103551971A (en) * | 2013-10-28 | 2014-02-05 | 博深工具股份有限公司 | Ceramic binding agent for ceramic grinding block and preparation method thereof |
| CN103753413A (en) * | 2014-01-10 | 2014-04-30 | 苏州赛力精密工具有限公司 | Peripheral edge grinding wheel for machining PCBN (polycrystalline cubic boron nitride) blades |
| CN104476417A (en) * | 2014-12-15 | 2015-04-01 | 普瑞思(厦门)精密工具有限公司 | Diamond wheel employing ceramic binding agent |
| TW201741077A (en) * | 2016-04-04 | 2017-12-01 | Kure Grinding Wheel Co Ltd | Ceramic bonded super-abrasive grinding wheel comprising spherical pores having an average pore diameter of 250 to 600 [mu]m that are dispersedly disposed in the super-abrasive layer |
| CN106392908A (en) * | 2016-05-30 | 2017-02-15 | 广东工业大学 | Diamond grinding wheel with ceramic binders and production method thereof |
| CN106078537A (en) * | 2016-06-22 | 2016-11-09 | 郑州大学 | Devitrified glass bonding agent for extra hard material grinding wheel and preparation method thereof, extra hard material grinding wheel and preparation method thereof, composite wheel |
| CN107857596A (en) * | 2017-10-22 | 2018-03-30 | 桂林理工大学 | A kind of preparation method for improving microwave-medium ceramics quality factor |
| CN107791163A (en) * | 2017-11-21 | 2018-03-13 | 常州市好利莱光电科技有限公司 | A kind of preparation method of the durable porous skive of high intensity |
| CN208262635U (en) * | 2018-05-03 | 2018-12-21 | 河南科恩超硬材料技术有限公司 | Grinding wheel is thinned in ceramic bond diamond |
| CN111018540A (en) * | 2020-01-14 | 2020-04-17 | 山东建筑大学 | High-strength boron nitride ceramic composite material based on low-temperature hot-pressing sintering |
Non-Patent Citations (1)
| Title |
|---|
| 第116-129页: "《超硬材料及制品专业实验教程》", 31 August 2014, 冶金工业出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113788680A (en) * | 2021-09-30 | 2021-12-14 | 江苏赛扬精工科技有限责任公司 | Nano ceramic bond cBN pore grinding wheel and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112296889B (en) | 2021-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110539209B (en) | Processing method of thin plate-shaped sapphire wafer | |
| CN111216037B (en) | Polishing pad and preparation method thereof | |
| CN112692956B (en) | Slurry direct-writing forming method of honeycomb-shaped diamond tool | |
| Chen et al. | Relationship between mechanical properties and processing performance of agglomerated diamond abrasive compared with single diamond abrasive | |
| CN104608061B (en) | Rubber roller grinding wheel and manufacturing method thereof | |
| CN112296889B (en) | Thinned porous ceramic composite bonding agent for SIC wafer, diamond tool bit, grinding wheel and manufacturing method of grinding wheel | |
| CN111495513B (en) | Grinding aid for dry grinding of active alpha-alumina micropowder and application thereof | |
| CN113997213B (en) | Ceramic diamond grinding wheel for thinning SiC wafer and manufacturing method thereof | |
| CN112659003B (en) | Self-sharpening superhard material grinding wheel and preparation method thereof | |
| CN110315439A (en) | A kind of mirror grinding grinding wheel and preparation method thereof with capillary micropore | |
| CN109202750B (en) | Hollow accumulated abrasive particles, preparation method thereof and superhard grinding tool | |
| CN111347354B (en) | Grinding wheel for thinning silicon carbide crystal, preparation method and application thereof | |
| CN110759734B (en) | Grinding wheel for thinning back of monocrystalline silicon piece and preparation method thereof | |
| CN105014553A (en) | Ceramic microcrystal grinding wheel with high-strength grinding performance and manufacture method thereof | |
| CN114806503A (en) | Catalytic abrasive grain cluster and preparation method thereof | |
| CN110405543A (en) | A kind of ferrite substrate polishing method using acid polishing slurry and Metal Substrate polishing disk | |
| CN107793157B (en) | Preparation method of cubic silicon carbide super-fine oilstone | |
| CN110421494A (en) | A kind of resin metallic composite mirror surface abrasive grinding wheel and preparation method thereof based on sol-gal process | |
| CN112025565B (en) | Ceramic bond end face grinding wheel special for fine grinding of compressor sliding blade and preparation method | |
| CN110340813B (en) | Grinding tool for processing single crystal sapphire and preparation method thereof | |
| CN110757355A (en) | Preparation method of superhard grinding wheel with abrasive particle multilayer array arrangement | |
| CN115091376A (en) | Ceramic bond diamond grinding wheel for thinning silicon carbide wafer and preparation method | |
| CN110744465A (en) | Preparation method of sapphire grinding disc | |
| CN113787465A (en) | Preparation method and application of grinding wheel for thinning back of silicon wafer | |
| CN110405649A (en) | A kind of collosol and gel polishing pellet and preparation method thereof of addition with waterproof coating soluble filler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |